TW289836B - Chemical vapor deposition system including dedicated cleaning gas injection - Google Patents

Chemical vapor deposition system including dedicated cleaning gas injection

Info

Publication number
TW289836B
TW289836B TW085102045A TW85102045A TW289836B TW 289836 B TW289836 B TW 289836B TW 085102045 A TW085102045 A TW 085102045A TW 85102045 A TW85102045 A TW 85102045A TW 289836 B TW289836 B TW 289836B
Authority
TW
Taiwan
Prior art keywords
gas injection
cleaning
chemical vapor
vapor deposition
deposition system
Prior art date
Application number
TW085102045A
Other languages
English (en)
Inventor
D Kilgore Michael
G M Van Den Hoek Wilbert
J Rau Christopher
J Van Schravendijk Bart
A Tobin Jeffrey
W Mountsier Thomas
C Oswalt James
Original Assignee
Novellus Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Novellus Systems Inc filed Critical Novellus Systems Inc
Application granted granted Critical
Publication of TW289836B publication Critical patent/TW289836B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/916—Differential etching apparatus including chamber cleaning means or shield for preventing deposits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
TW085102045A 1996-02-16 1996-02-17 Chemical vapor deposition system including dedicated cleaning gas injection TW289836B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/602,641 US6200412B1 (en) 1996-02-16 1996-02-16 Chemical vapor deposition system including dedicated cleaning gas injection

Publications (1)

Publication Number Publication Date
TW289836B true TW289836B (en) 1996-11-01

Family

ID=24412185

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085102045A TW289836B (en) 1996-02-16 1996-02-17 Chemical vapor deposition system including dedicated cleaning gas injection

Country Status (7)

Country Link
US (1) US6200412B1 (zh)
EP (1) EP0790635A3 (zh)
JP (1) JP3141929B2 (zh)
KR (1) KR100269559B1 (zh)
DE (1) DE790635T1 (zh)
SG (1) SG76499A1 (zh)
TW (1) TW289836B (zh)

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CN111370282A (zh) * 2018-12-26 2020-07-03 江苏鲁汶仪器有限公司 一种等离子增强化学气相沉积腔室的清洗方法

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CN103219214A (zh) * 2012-01-20 2013-07-24 李文杰 具有控制施于基材上的等离子体偏压能力的连续腔体制程设备
CN103219214B (zh) * 2012-01-20 2016-04-06 李文杰 连续式系统的等离子体制程、设备、腔体及机构
CN111370282A (zh) * 2018-12-26 2020-07-03 江苏鲁汶仪器有限公司 一种等离子增强化学气相沉积腔室的清洗方法
CN111370282B (zh) * 2018-12-26 2022-06-24 江苏鲁汶仪器有限公司 一种等离子增强化学气相沉积腔室的清洗方法

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EP0790635A2 (en) 1997-08-20
JPH09249976A (ja) 1997-09-22
EP0790635A3 (en) 1998-04-15
US6200412B1 (en) 2001-03-13
SG76499A1 (en) 2000-11-21
KR970063445A (ko) 1997-09-12
KR100269559B1 (ko) 2000-12-01
JP3141929B2 (ja) 2001-03-07

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