TW289151B - - Google Patents
Info
- Publication number
- TW289151B TW289151B TW084107175A TW84107175A TW289151B TW 289151 B TW289151 B TW 289151B TW 084107175 A TW084107175 A TW 084107175A TW 84107175 A TW84107175 A TW 84107175A TW 289151 B TW289151 B TW 289151B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/312,845 US5486483A (en) | 1994-09-27 | 1994-09-27 | Method of forming closely spaced metal electrodes in a semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW289151B true TW289151B (en, 2012) | 1996-10-21 |
Family
ID=23213270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW084107175A TW289151B (en, 2012) | 1994-09-27 | 1995-07-11 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5486483A (en, 2012) |
| EP (1) | EP0704882B1 (en, 2012) |
| JP (1) | JP2702687B2 (en, 2012) |
| KR (1) | KR0184621B1 (en, 2012) |
| DE (1) | DE69528803T2 (en, 2012) |
| SG (1) | SG63527A1 (en, 2012) |
| TW (1) | TW289151B (en, 2012) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08172102A (ja) * | 1994-12-20 | 1996-07-02 | Murata Mfg Co Ltd | 半導体装置の製造方法 |
| JP3360461B2 (ja) * | 1995-01-31 | 2002-12-24 | ソニー株式会社 | メタル成膜工程の前処理方法 |
| JPH08321486A (ja) * | 1995-05-24 | 1996-12-03 | Sony Corp | 金属膜のパターン形成方法 |
| US5804487A (en) * | 1996-07-10 | 1998-09-08 | Trw Inc. | Method of fabricating high βHBT devices |
| KR100262940B1 (ko) * | 1998-05-29 | 2000-09-01 | 이계철 | 절연막 리프트 오프를 이용한 화합물 반도체 소자 제조 방법 |
| US6297164B1 (en) * | 1998-11-30 | 2001-10-02 | Advantest Corp. | Method for producing contact structures |
| US6504223B1 (en) * | 1998-11-30 | 2003-01-07 | Advantest Corp. | Contact structure and production method thereof and probe contact assembly using same |
| US6540524B1 (en) * | 2000-02-14 | 2003-04-01 | Advantest Corp. | Contact structure and production method thereof |
| US6406965B1 (en) | 2001-04-19 | 2002-06-18 | Trw Inc. | Method of fabricating HBT devices |
| US7067898B1 (en) | 2004-05-25 | 2006-06-27 | Hrl Laboratories, Llc | Semiconductor device having a self-aligned base contact and narrow emitter |
| US7368764B1 (en) | 2005-04-18 | 2008-05-06 | Hrl Laboratories, Llc | Heterojunction bipolar transistor and method to make a heterojunction bipolar transistor |
| US8319344B2 (en) | 2008-07-14 | 2012-11-27 | Infineon Technologies Ag | Electrical device with protruding contact elements and overhang regions over a cavity |
| US20110284983A1 (en) * | 2010-05-21 | 2011-11-24 | Solapoint Corporation | Photodiode device and manufacturing method thereof |
| US9728444B2 (en) * | 2015-12-31 | 2017-08-08 | International Business Machines Corporation | Reactive ion etching assisted lift-off processes for fabricating thick metallization patterns with tight pitch |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3865646A (en) * | 1972-09-25 | 1975-02-11 | Bell Telephone Labor Inc | Dielectric optical waveguides and technique for fabricating same |
| US4325181A (en) * | 1980-12-17 | 1982-04-20 | The United States Of America As Represented By The Secretary Of The Navy | Simplified fabrication method for high-performance FET |
| US4700462A (en) * | 1986-10-08 | 1987-10-20 | Hughes Aircraft Company | Process for making a T-gated transistor |
| US4818712A (en) * | 1987-10-13 | 1989-04-04 | Northrop Corporation | Aluminum liftoff masking process and product |
| US5093280A (en) * | 1987-10-13 | 1992-03-03 | Northrop Corporation | Refractory metal ohmic contacts and method |
| DE3877121D1 (de) * | 1987-10-23 | 1993-02-11 | Siemens Ag | Verfahren zur herstellung eines planaren selbstjustierten heterobipolartransistors. |
| FR2625612B1 (fr) * | 1987-12-30 | 1990-05-04 | Labo Electronique Physique | Procede de realisation d'un dispositif semiconducteur du type transistor bipolaire a heterojonction |
| US5223454A (en) * | 1988-01-29 | 1993-06-29 | Hitachi, Ltd. | Method of manufacturing semiconductor integrated circuit device |
| JPH0249416A (ja) * | 1988-08-10 | 1990-02-19 | Sanyo Electric Co Ltd | 微細パターンの形成方法 |
| KR910005400B1 (ko) * | 1988-09-05 | 1991-07-29 | 재단법인 한국전자통신연구소 | 다층레지스트를 이용한 자기정합형 갈륨비소 전계효과트랜지스터의 제조방법 |
| US4959326A (en) * | 1988-12-22 | 1990-09-25 | Siemens Aktiengesellschaft | Fabricating T-gate MESFETS employing double exposure, double develop techniques |
| US4996165A (en) * | 1989-04-21 | 1991-02-26 | Rockwell International Corporation | Self-aligned dielectric assisted planarization process |
| JPH0355852A (ja) * | 1989-07-25 | 1991-03-11 | Sony Corp | 半導体装置の製造方法 |
| US5053348A (en) * | 1989-12-01 | 1991-10-01 | Hughes Aircraft Company | Fabrication of self-aligned, t-gate hemt |
| US5179032A (en) * | 1990-02-01 | 1993-01-12 | Quigg Fred L | Mosfet structure having reduced capacitance and method of forming same |
| FR2658362A1 (fr) * | 1990-02-09 | 1991-08-16 | Philips Electronique Lab | Procede de realisation par autoalignement, d'un dispositif semiconducteur integre, comprenant au moins la formation d'un premier contact d'electrode encapsule et muni d'espaceurs et d'un second contact d'electrode autoaligne sur celui-ci. |
| FR2663155B1 (fr) * | 1990-06-12 | 1997-01-24 | Thomson Composants Microondes | Procede de realisation d'une grille de transistor. |
| US5185278A (en) * | 1990-10-22 | 1993-02-09 | Motorola, Inc. | Method of making self-aligned gate providing improved breakdown voltage |
| JPH04223342A (ja) * | 1990-12-26 | 1992-08-13 | Mitsubishi Electric Corp | 半導体装置のゲート電極とその製造方法 |
| US5334542A (en) * | 1991-11-27 | 1994-08-02 | Oki Electric Industry Co., Ltd. | Method of forming T-shaped electrode |
| US5256580A (en) * | 1992-04-06 | 1993-10-26 | Motorola, Inc. | Method of forming a light emitting diode |
| US5304511A (en) * | 1992-09-29 | 1994-04-19 | Mitsubishi Denki Kabushiki Kaisha | Production method of T-shaped gate electrode in semiconductor device |
| US5288660A (en) * | 1993-02-01 | 1994-02-22 | Avantek, Inc. | Method for forming self-aligned t-shaped transistor electrode |
-
1994
- 1994-09-27 US US08/312,845 patent/US5486483A/en not_active Expired - Lifetime
-
1995
- 1995-07-11 TW TW084107175A patent/TW289151B/zh active
- 1995-07-13 EP EP95111003A patent/EP0704882B1/en not_active Expired - Lifetime
- 1995-07-13 DE DE69528803T patent/DE69528803T2/de not_active Expired - Fee Related
- 1995-09-18 JP JP7238125A patent/JP2702687B2/ja not_active Expired - Fee Related
- 1995-09-19 KR KR1019950031273A patent/KR0184621B1/ko not_active Expired - Fee Related
- 1995-09-26 SG SG1995001430A patent/SG63527A1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2702687B2 (ja) | 1998-01-21 |
| EP0704882A3 (en) | 1998-01-07 |
| JPH08111389A (ja) | 1996-04-30 |
| US5486483A (en) | 1996-01-23 |
| SG63527A1 (en) | 1999-03-30 |
| DE69528803D1 (de) | 2002-12-19 |
| EP0704882A2 (en) | 1996-04-03 |
| KR0184621B1 (ko) | 1999-04-15 |
| DE69528803T2 (de) | 2003-03-20 |
| KR960012328A (ko) | 1996-04-20 |
| EP0704882B1 (en) | 2002-11-13 |