TW283800B - - Google Patents

Info

Publication number
TW283800B
TW283800B TW085100411A TW85100411A TW283800B TW 283800 B TW283800 B TW 283800B TW 085100411 A TW085100411 A TW 085100411A TW 85100411 A TW85100411 A TW 85100411A TW 283800 B TW283800 B TW 283800B
Authority
TW
Taiwan
Application number
TW085100411A
Inventor
Rieger Johann
Terletzki Hartmud
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=7755459&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW283800(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of TW283800B publication Critical patent/TW283800B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW085100411A 1995-03-02 1996-01-15 TW283800B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19507313A DE19507313C2 (de) 1995-03-02 1995-03-02 Halbleiterbauelement mit Schutzstruktur zum Schutz vor elektrostatischer Entladung

Publications (1)

Publication Number Publication Date
TW283800B true TW283800B (zh) 1996-08-21

Family

ID=7755459

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085100411A TW283800B (zh) 1995-03-02 1996-01-15

Country Status (6)

Country Link
US (1) US5646434A (zh)
EP (1) EP0730332A1 (zh)
JP (1) JPH08250667A (zh)
KR (1) KR100394250B1 (zh)
DE (1) DE19507313C2 (zh)
TW (1) TW283800B (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE229230T1 (de) * 1995-04-06 2002-12-15 Infineon Technologies Ag Integrierte halbleiterschaltung mit einem schutzmittel
US6246122B1 (en) * 1996-07-09 2001-06-12 Winbond Electronics Corp. Electrostatic discharge protective schemes for integrated circuit packages
US6549114B2 (en) 1998-08-20 2003-04-15 Littelfuse, Inc. Protection of electrical devices with voltage variable materials
US6614633B1 (en) * 1999-03-19 2003-09-02 Denso Corporation Semiconductor device including a surge protecting circuit
US6608744B1 (en) * 1999-11-02 2003-08-19 Oki Electric Industry Co., Ltd. SOI CMOS input protection circuit with open-drain configuration
US6587320B1 (en) 2000-01-04 2003-07-01 Sarnoff Corporation Apparatus for current ballasting ESD sensitive devices
DE10102354C1 (de) 2001-01-19 2002-08-08 Infineon Technologies Ag Halbleiter-Bauelement mit ESD-Schutz
CN1541437A (zh) * 2001-07-10 2004-10-27 力特保险丝有限公司 网络设备用静电放电装置
US7034652B2 (en) * 2001-07-10 2006-04-25 Littlefuse, Inc. Electrostatic discharge multifunction resistor
JP4902944B2 (ja) * 2002-04-08 2012-03-21 リッテルフューズ，インコーポレイティド 直接塗布するための電圧可変物質、及び電圧可変物質を使用するデバイス
US7132922B2 (en) * 2002-04-08 2006-11-07 Littelfuse, Inc. Direct application voltage variable material, components thereof and devices employing same
US7183891B2 (en) * 2002-04-08 2007-02-27 Littelfuse, Inc. Direct application voltage variable material, devices employing same and methods of manufacturing such devices
FR2856196B1 (fr) * 2003-06-13 2005-09-09 St Microelectronics Sa Composant electronique protege contre les decharges electrostatiques
US7522394B2 (en) * 2003-08-21 2009-04-21 Broadcom Corporation Radio frequency integrated circuit having sectional ESD protection
JP4806540B2 (ja) * 2005-05-18 2011-11-02 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US7672101B2 (en) * 2007-09-10 2010-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. ESD protection circuit and method

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0693497B2 (ja) * 1986-07-30 1994-11-16 日本電気株式会社 相補型ｍｉｓ集積回路
JP2751372B2 (ja) * 1989-04-21 1998-05-18 日本電気株式会社 半導体装置
US5180932A (en) * 1990-03-15 1993-01-19 Bengel David W Current mode multiplexed sample and hold circuit
US5079608A (en) * 1990-11-06 1992-01-07 Harris Corporation Power MOSFET transistor circuit with active clamp
DE4200884A1 (de) * 1991-01-16 1992-07-23 Micron Technology Inc Integrierte halbleiterschaltungsvorrichtung
JPH06188380A (ja) * 1992-12-17 1994-07-08 Hitachi Ltd 半導体集積回路装置
EP0623958B1 (de) * 1993-05-04 1998-04-01 Siemens Aktiengesellschaft Integrierte Halbleiterschaltung mit einem Schutzmittel
GB2283622B (en) * 1993-11-03 1998-01-14 Plessey Semiconductors Ltd Overvoltage protection circuit
JP2570610B2 (ja) * 1993-12-24 1997-01-08 日本電気株式会社 半導体装置
US5561577A (en) * 1994-02-02 1996-10-01 Hewlett-Packard Company ESD protection for IC's

Also Published As

Publication number Publication date
DE19507313A1 (de) 1996-09-05
DE19507313C2 (de) 1996-12-19
EP0730332A1 (de) 1996-09-04
KR960036012A (ko) 1996-10-28
JPH08250667A (ja) 1996-09-27
KR100394250B1 (ko) 2003-10-22
US5646434A (en) 1997-07-08

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Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent