TW280939B - Wafer heating chuck with dual zone backplane heating and segmented clamping member - Google Patents
Wafer heating chuck with dual zone backplane heating and segmented clamping memberInfo
- Publication number
- TW280939B TW280939B TW084100221A TW84100221A TW280939B TW 280939 B TW280939 B TW 280939B TW 084100221 A TW084100221 A TW 084100221A TW 84100221 A TW84100221 A TW 84100221A TW 280939 B TW280939 B TW 280939B
- Authority
- TW
- Taiwan
- Prior art keywords
- backplane
- temperature
- heating
- clamping member
- wafer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/319,884 US5595241A (en) | 1994-10-07 | 1994-10-07 | Wafer heating chuck with dual zone backplane heating and segmented clamping member |
Publications (1)
Publication Number | Publication Date |
---|---|
TW280939B true TW280939B (en) | 1996-07-11 |
Family
ID=23244014
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW084100221A TW280939B (en) | 1994-10-07 | 1995-01-11 | Wafer heating chuck with dual zone backplane heating and segmented clamping member |
Country Status (9)
Country | Link |
---|---|
US (1) | US5595241A (ko) |
EP (1) | EP0733267B1 (ko) |
JP (1) | JP3485326B2 (ko) |
KR (1) | KR100312670B1 (ko) |
AU (1) | AU1294895A (ko) |
CA (1) | CA2176362A1 (ko) |
DE (1) | DE69428603T2 (ko) |
TW (1) | TW280939B (ko) |
WO (1) | WO1996011495A1 (ko) |
Families Citing this family (60)
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JP3493880B2 (ja) * | 1996-02-28 | 2004-02-03 | 信越半導体株式会社 | 輻射加熱装置および加熱方法 |
US5844205A (en) * | 1996-04-19 | 1998-12-01 | Applied Komatsu Technology, Inc. | Heated substrate support structure |
US5892203A (en) * | 1996-05-29 | 1999-04-06 | International Business Machines Corporation | Apparatus for making laminated integrated circuit devices |
US5802856A (en) * | 1996-07-31 | 1998-09-08 | Stanford University | Multizone bake/chill thermal cycling module |
US5811762A (en) * | 1996-09-25 | 1998-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Heater assembly with dual temperature control for use in PVD/CVD system |
JPH10135315A (ja) * | 1996-10-29 | 1998-05-22 | Tokyo Electron Ltd | 試料載置台の温度制御装置及び検査装置 |
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AU7291398A (en) | 1997-05-06 | 1998-11-27 | Thermoceramix, L.L.C. | Deposited resistive coatings |
US6082297A (en) * | 1997-09-12 | 2000-07-04 | Novellus Sytems, Inc. | Encapsulated thermofoil heater apparatus and associated methods |
US5991312A (en) | 1997-11-03 | 1999-11-23 | Carrier Access Corporation | Telecommunications multiplexer |
US6183562B1 (en) * | 1997-12-23 | 2001-02-06 | Sony Corporation Of Japan | Thermal protection system for a chemical vapor deposition machine |
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US6072163A (en) * | 1998-03-05 | 2000-06-06 | Fsi International Inc. | Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate |
DE19822000C2 (de) * | 1998-05-15 | 2002-04-18 | Infineon Technologies Ag | Prüfverfahren für integrierte Schaltungen auf einem Wafer |
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US6108491A (en) * | 1998-10-30 | 2000-08-22 | Applied Materials, Inc. | Dual surface reflector |
JP4317608B2 (ja) * | 1999-01-18 | 2009-08-19 | 東京エレクトロン株式会社 | 成膜装置 |
US6583638B2 (en) * | 1999-01-26 | 2003-06-24 | Trio-Tech International | Temperature-controlled semiconductor wafer chuck system |
JP2000243542A (ja) * | 1999-02-24 | 2000-09-08 | Nhk Spring Co Ltd | ヒータユニット及びその製造方法 |
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US6373679B1 (en) | 1999-07-02 | 2002-04-16 | Cypress Semiconductor Corp. | Electrostatic or mechanical chuck assembly conferring improved temperature uniformity onto workpieces held thereby, workpiece processing technology and/or apparatus containing the same, and method(s) for holding and/or processing a workpiece with the same |
US6466426B1 (en) * | 1999-08-03 | 2002-10-15 | Applied Materials Inc. | Method and apparatus for thermal control of a semiconductor substrate |
JP4209057B2 (ja) | 1999-12-01 | 2009-01-14 | 東京エレクトロン株式会社 | セラミックスヒーターならびにそれを用いた基板処理装置および基板処理方法 |
US6328807B1 (en) * | 1999-12-14 | 2001-12-11 | Corning Incorporated | Chuck heater for improved planar deposition process |
US6414276B1 (en) * | 2000-03-07 | 2002-07-02 | Silicon Valley Group, Inc. | Method for substrate thermal management |
US6472643B1 (en) | 2000-03-07 | 2002-10-29 | Silicon Valley Group, Inc. | Substrate thermal management system |
US6476362B1 (en) | 2000-09-12 | 2002-11-05 | Applied Materials, Inc. | Lamp array for thermal processing chamber |
JP2004528677A (ja) | 2000-11-29 | 2004-09-16 | サーモセラミックス インコーポレイテッド | 抵抗加熱器及びその使用法 |
DE10127223A1 (de) * | 2001-05-22 | 2003-01-23 | Ego Elektro Geraetebau Gmbh | Heizungseinrichtung für Filterelemente eines Partikelfilters und Partikelfilter |
US6529686B2 (en) | 2001-06-06 | 2003-03-04 | Fsi International, Inc. | Heating member for combination heating and chilling apparatus, and methods |
US6897411B2 (en) * | 2002-02-11 | 2005-05-24 | Applied Materials, Inc. | Heated substrate support |
DE10216786C5 (de) * | 2002-04-15 | 2009-10-15 | Ers Electronic Gmbh | Verfahren und Vorrichtung zur Konditionierung von Halbleiterwafern und/oder Hybriden |
JP2004055722A (ja) * | 2002-07-18 | 2004-02-19 | Renesas Technology Corp | 洗浄装置、基板の洗浄方法および半導体装置の製造方法 |
US6918965B2 (en) * | 2002-08-28 | 2005-07-19 | Micron Technology, Inc. | Single substrate annealing of magnetoresistive structure |
US20040226513A1 (en) * | 2003-05-12 | 2004-11-18 | Applied Materials, Inc. | Chamber for uniform heating of large area substrates |
US20040244949A1 (en) * | 2003-05-30 | 2004-12-09 | Tokyo Electron Limited | Temperature controlled shield ring |
US6991003B2 (en) * | 2003-07-28 | 2006-01-31 | M.Braun, Inc. | System and method for automatically purifying solvents |
EP1738251A2 (en) * | 2004-04-16 | 2007-01-03 | Cascade Basic Research Corp. | Modelling relationships within an on-line connectivity universe |
US20060130764A1 (en) * | 2004-12-16 | 2006-06-22 | Jusung Engineering Co., Ltd. | Susceptor for apparatus fabricating thin film |
US7429718B2 (en) * | 2005-08-02 | 2008-09-30 | Applied Materials, Inc. | Heating and cooling of substrate support |
US7652227B2 (en) * | 2006-05-18 | 2010-01-26 | Applied Materials, Inc. | Heating and cooling plate for a vacuum chamber |
JP5272485B2 (ja) * | 2008-04-08 | 2013-08-28 | 住友電気工業株式会社 | 基板支持部材 |
CN104313529A (zh) * | 2008-05-01 | 2015-01-28 | 萨莫希雷梅克斯公司 | 制造烹饪器具的方法 |
CN102308380B (zh) * | 2009-02-04 | 2014-06-04 | 马特森技术有限公司 | 用于径向调整衬底的表面上的温度轮廓的静电夹具系统及方法 |
TWM392431U (en) * | 2010-02-04 | 2010-11-11 | Epistar Corp | Systems for epitaxial growth |
NL2006913A (en) * | 2010-07-16 | 2012-01-17 | Asml Netherlands Bv | Lithographic apparatus and method. |
US20130008602A1 (en) * | 2011-07-07 | 2013-01-10 | Lam Research Ag | Apparatus for treating a wafer-shaped article |
KR101757522B1 (ko) * | 2012-03-07 | 2017-07-12 | 니뽄 도쿠슈 도교 가부시키가이샤 | 반송 장치 및 세라믹 부재 |
US20140151360A1 (en) * | 2012-11-30 | 2014-06-05 | Wd Media, Inc. | Heater assembly for disk processing system |
JP6080571B2 (ja) * | 2013-01-31 | 2017-02-15 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
JP6441927B2 (ja) * | 2013-08-06 | 2018-12-19 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 局部的に加熱されるマルチゾーン式の基板支持体 |
US10032601B2 (en) | 2014-02-21 | 2018-07-24 | Varian Semiconductor Equipment Associates, Inc. | Platen support structure |
JP2016063033A (ja) * | 2014-09-17 | 2016-04-25 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および記録媒体 |
US10008399B2 (en) | 2015-05-19 | 2018-06-26 | Applied Materials, Inc. | Electrostatic puck assembly with metal bonded backing plate for high temperature processes |
US10249526B2 (en) * | 2016-03-04 | 2019-04-02 | Applied Materials, Inc. | Substrate support assembly for high temperature processes |
US11011355B2 (en) * | 2017-05-12 | 2021-05-18 | Lam Research Corporation | Temperature-tuned substrate support for substrate processing systems |
DE102020001439B3 (de) * | 2020-02-21 | 2021-06-10 | Mühlbauer Gmbh & Co. Kg | Vorrichtung und Verfahren zum Übertragen elektronischer Bauteile von einem ersten zu einem zweiten Träger |
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US3369989A (en) * | 1964-07-22 | 1968-02-20 | Ibm | Cathode sputtering apparatus including precision temperature control of substrate |
US3633537A (en) * | 1970-07-06 | 1972-01-11 | Gen Motors Corp | Vapor deposition apparatus with planetary susceptor |
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US4680061A (en) * | 1979-12-21 | 1987-07-14 | Varian Associates, Inc. | Method of thermal treatment of a wafer in an evacuated environment |
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US4535227A (en) * | 1983-10-04 | 1985-08-13 | Ushio Denki Kabushiki Kaisha | Method for heating semiconductor wafer by means of application of radiated light |
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US5294778A (en) * | 1991-09-11 | 1994-03-15 | Lam Research Corporation | CVD platen heater system utilizing concentric electric heating elements |
JPH0697080A (ja) * | 1992-09-10 | 1994-04-08 | Mitsubishi Electric Corp | 化学気相成長装置用反応室および該反応室を用いた化学気相成長装置 |
US5460684A (en) * | 1992-12-04 | 1995-10-24 | Tokyo Electron Limited | Stage having electrostatic chuck and plasma processing apparatus using same |
US5467220A (en) * | 1994-02-18 | 1995-11-14 | Applied Materials, Inc. | Method and apparatus for improving semiconductor wafer surface temperature uniformity |
-
1994
- 1994-10-07 US US08/319,884 patent/US5595241A/en not_active Expired - Lifetime
- 1994-11-29 DE DE69428603T patent/DE69428603T2/de not_active Expired - Lifetime
- 1994-11-29 JP JP51255096A patent/JP3485326B2/ja not_active Expired - Lifetime
- 1994-11-29 CA CA002176362A patent/CA2176362A1/en not_active Abandoned
- 1994-11-29 AU AU12948/95A patent/AU1294895A/en not_active Abandoned
- 1994-11-29 KR KR1019960702981A patent/KR100312670B1/ko not_active IP Right Cessation
- 1994-11-29 EP EP95904144A patent/EP0733267B1/en not_active Expired - Lifetime
- 1994-11-29 WO PCT/US1994/013615 patent/WO1996011495A1/en active IP Right Grant
-
1995
- 1995-01-11 TW TW084100221A patent/TW280939B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69428603D1 (de) | 2001-11-15 |
EP0733267B1 (en) | 2001-10-10 |
DE69428603T2 (de) | 2002-07-11 |
JP3485326B2 (ja) | 2004-01-13 |
EP0733267A1 (en) | 1996-09-25 |
JPH09506480A (ja) | 1997-06-24 |
KR100312670B1 (ko) | 2002-04-06 |
AU1294895A (en) | 1996-05-02 |
CA2176362A1 (en) | 1996-04-18 |
US5595241A (en) | 1997-01-21 |
WO1996011495A1 (en) | 1996-04-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK4A | Expiration of patent term of an invention patent |