TW273050B - High-speed high-density sram cell - Google Patents
High-speed high-density sram cellInfo
- Publication number
- TW273050B TW273050B TW084101598A TW84101598A TW273050B TW 273050 B TW273050 B TW 273050B TW 084101598 A TW084101598 A TW 084101598A TW 84101598 A TW84101598 A TW 84101598A TW 273050 B TW273050 B TW 273050B
- Authority
- TW
- Taiwan
- Prior art keywords
- sram cell
- speed
- density sram
- cell
- density
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
- H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/326,575 US5521861A (en) | 1994-10-20 | 1994-10-20 | High-speed high-density SRAM cell |
Publications (1)
Publication Number | Publication Date |
---|---|
TW273050B true TW273050B (en) | 1996-03-21 |
Family
ID=23272806
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW084101598A TW273050B (en) | 1994-10-20 | 1995-02-21 | High-speed high-density sram cell |
Country Status (5)
Country | Link |
---|---|
US (1) | US5521861A (zh) |
EP (1) | EP0708449A3 (zh) |
JP (1) | JPH08227943A (zh) |
KR (1) | KR960015591A (zh) |
TW (1) | TW273050B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100200765B1 (ko) * | 1996-12-04 | 1999-06-15 | 윤종용 | 레이아웃 면적이 감소되는 sram 셀 |
US5870330A (en) * | 1996-12-27 | 1999-02-09 | Stmicroelectronics, Inc. | Method of making and structure of SRAM storage cell with N channel thin film transistor load devices |
US6172899B1 (en) * | 1998-05-08 | 2001-01-09 | Micron Technology. Inc. | Static-random-access-memory cell |
US6198670B1 (en) | 1999-06-22 | 2001-03-06 | Micron Technology, Inc. | Bias generator for a four transistor load less memory cell |
US6295224B1 (en) | 1999-12-30 | 2001-09-25 | Stmicroelectronics, Inc. | Circuit and method of fabricating a memory cell for a static random access memory |
US6240009B1 (en) * | 2000-02-02 | 2001-05-29 | Hewlett-Packard Company | Asymmetric ram cell |
JP3517411B2 (ja) * | 2002-04-08 | 2004-04-12 | 沖電気工業株式会社 | 半導体記憶装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4623989A (en) * | 1983-08-31 | 1986-11-18 | Texas Instruments Incorporated | Memory with p-channel cell access transistors |
JPS60151897A (ja) * | 1984-01-18 | 1985-08-09 | Nec Corp | 半導体記憶装置 |
JPH0732200B2 (ja) * | 1990-11-15 | 1995-04-10 | 株式会社東芝 | スタティック型メモリセル |
JPH04345992A (ja) * | 1991-05-24 | 1992-12-01 | Fujitsu Ltd | スタティックram |
US5404326A (en) * | 1992-06-30 | 1995-04-04 | Sony Corporation | Static random access memory cell structure having a thin film transistor load |
-
1994
- 1994-10-20 US US08/326,575 patent/US5521861A/en not_active Expired - Lifetime
-
1995
- 1995-02-21 TW TW084101598A patent/TW273050B/zh active
- 1995-10-11 EP EP95307224A patent/EP0708449A3/en not_active Withdrawn
- 1995-10-19 KR KR1019950036135A patent/KR960015591A/ko not_active Application Discontinuation
- 1995-10-20 JP JP7271660A patent/JPH08227943A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JPH08227943A (ja) | 1996-09-03 |
EP0708449A3 (en) | 1998-01-14 |
KR960015591A (ko) | 1996-05-22 |
US5521861A (en) | 1996-05-28 |
EP0708449A2 (en) | 1996-04-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
MY104092A (en) | Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell and fabrication process therefor. | |
US5055716B1 (zh) | ||
AU4331899A (en) | Radiation hardened six transistor random access memory and memory device | |
US6519176B1 (en) | Dual threshold SRAM cell for single-ended sensing | |
AU4049197A (en) | Static memory cell | |
TW359876B (en) | SRAM cell and method of manufacturing the same | |
TW273050B (en) | High-speed high-density sram cell | |
EP0376065A3 (en) | Semiconductor memory integrated circuit | |
TW333698B (en) | The method for output circuit to select switch transistor & semiconductor memory | |
TW330332B (en) | Small-sized static random access memory cell including a line used as both a word line and a power supply voltage line, two load elements, two NMOS driver transistors and two PMOS access transistors | |
EP0717415A3 (en) | Semiconductor memory device | |
JPS6453446A (en) | Detection amplifier whose layout is optimized in c-mos dynamic ram | |
JPS5769586A (en) | Semiconductor memory device | |
EP0316877A3 (en) | Semiconductor memory device with improved output circuit | |
TW429549B (en) | Semiconductor memory device and manufacturing method thereof | |
IE853095L (en) | Integrated logic circuit | |
EP0889480A3 (en) | Improved dynamic access memory equalizer circuits and methods therefor | |
JPS648594A (en) | Read only memory | |
JPS56148790A (en) | Semiconductor memory | |
HK1001179A1 (en) | Dram cell assembly dram | |
JPS6472554A (en) | Dynamic memory circuit | |
EP0317984A3 (en) | Nonvolatile memory | |
Okamura et al. | A 1 ns, 1 W, 2.5 V, 32 Kb NTL-CMOS SRAM macro using a memory cell with p-channel access transistors | |
TW359021B (en) | Mutual compensation metal-oxygen half output buffer containing anti-static discharge protection circuit | |
TW242198B (en) | Fabrication method for static random access memory cell |