TW270270B - - Google Patents

Info

Publication number
TW270270B
TW270270B TW083104702A TW83104702A TW270270B TW 270270 B TW270270 B TW 270270B TW 083104702 A TW083104702 A TW 083104702A TW 83104702 A TW83104702 A TW 83104702A TW 270270 B TW270270 B TW 270270B
Authority
TW
Taiwan
Application number
TW083104702A
Original Assignee
Tokyo Electron Co Ltd
Horiike Yasuko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP05092304A external-priority patent/JP3081885B2/ja
Priority claimed from JP09230393A external-priority patent/JP3174981B2/ja
Application filed by Tokyo Electron Co Ltd, Horiike Yasuko filed Critical Tokyo Electron Co Ltd
Application granted granted Critical
Publication of TW270270B publication Critical patent/TW270270B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW083104702A 1993-03-26 1994-05-24 TW270270B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP05092304A JP3081885B2 (ja) 1993-03-26 1993-03-26 プラズマ処理装置
JP09230393A JP3174981B2 (ja) 1993-03-26 1993-03-26 ヘリコン波プラズマ処理装置

Publications (1)

Publication Number Publication Date
TW270270B true TW270270B (zh) 1996-02-11

Family

ID=26433751

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083104702A TW270270B (zh) 1993-03-26 1994-05-24

Country Status (3)

Country Link
US (1) US5487785A (zh)
KR (1) KR100267959B1 (zh)
TW (1) TW270270B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8307782B2 (en) 2007-12-26 2012-11-13 Kochi Industrial Promotion Center Deposition apparatus and deposition method

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TW249313B (zh) * 1993-03-06 1995-06-11 Tokyo Electron Co
JP3365067B2 (ja) * 1994-02-10 2003-01-08 ソニー株式会社 プラズマ装置およびこれを用いたプラズマ処理方法
JP3329128B2 (ja) * 1995-03-28 2002-09-30 ソニー株式会社 半導体装置の製造方法
US5653811A (en) * 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
US5670218A (en) * 1995-10-04 1997-09-23 Hyundai Electronics Industries Co., Ltd. Method for forming ferroelectric thin film and apparatus therefor
US6264812B1 (en) * 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
KR100205098B1 (ko) * 1996-04-25 1999-06-15 김영환 플라즈마 식각 장치
JP3225855B2 (ja) * 1996-06-06 2001-11-05 株式会社島津製作所 薄膜形成装置
US5980638A (en) * 1997-01-30 1999-11-09 Fusion Systems Corporation Double window exhaust arrangement for wafer plasma processor
JP3944946B2 (ja) * 1997-04-25 2007-07-18 株式会社島津製作所 薄膜形成装置
US20070122997A1 (en) * 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6245161B1 (en) * 1997-05-12 2001-06-12 Silicon Genesis Corporation Economical silicon-on-silicon hybrid wafer assembly
US6033974A (en) * 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US6027988A (en) * 1997-05-28 2000-02-22 The Regents Of The University Of California Method of separating films from bulk substrates by plasma immersion ion implantation
US6548382B1 (en) * 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US6103599A (en) * 1997-07-25 2000-08-15 Silicon Genesis Corporation Planarizing technique for multilayered substrates
US6051073A (en) * 1998-02-11 2000-04-18 Silicon Genesis Corporation Perforated shield for plasma immersion ion implantation
US6228176B1 (en) 1998-02-11 2001-05-08 Silicon Genesis Corporation Contoured platen design for plasma immerson ion implantation
US6274459B1 (en) 1998-02-17 2001-08-14 Silicon Genesis Corporation Method for non mass selected ion implant profile control
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US6368678B1 (en) 1998-05-13 2002-04-09 Terry Bluck Plasma processing system and method
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6458723B1 (en) 1999-06-24 2002-10-01 Silicon Genesis Corporation High temperature implant apparatus
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
AU6905000A (en) * 1999-08-10 2001-03-05 Silicon Genesis Corporation A cleaving process to fabricate multilayered substrates using low implantation doses
DE10016971A1 (de) * 2000-04-06 2001-10-11 Angew Solarenergie Ase Gmbh Verfahren und Vorrichtung zum Beschichten und/oder Behandeln eines Substrats
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US6676760B2 (en) 2001-08-16 2004-01-13 Appiled Materials, Inc. Process chamber having multiple gas distributors and method
US8187377B2 (en) * 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
KR100488348B1 (ko) * 2002-11-14 2005-05-10 최대규 플라즈마 프로세스 챔버 및 시스템
DE10320597A1 (de) * 2003-04-30 2004-12-02 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von Halbleiterschichten mit zwei Prozessgasen, von denen das eine vorkonditioniert ist
US7354815B2 (en) * 2003-11-18 2008-04-08 Silicon Genesis Corporation Method for fabricating semiconductor devices using strained silicon bearing material
KR20050093230A (ko) * 2004-03-18 2005-09-23 엘지.필립스 엘시디 주식회사 스퍼터링 장비
KR101501426B1 (ko) * 2006-06-02 2015-03-11 어플라이드 머티어리얼스, 인코포레이티드 차압 측정들에 의한 가스 유동 제어
US7811900B2 (en) * 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US20090056877A1 (en) * 2007-08-31 2009-03-05 Tokyo Electron Limited Plasma processing apparatus
US8330126B2 (en) * 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
JP5099101B2 (ja) * 2009-01-23 2012-12-12 東京エレクトロン株式会社 プラズマ処理装置
US7999479B2 (en) * 2009-04-16 2011-08-16 Varian Semiconductor Equipment Associates, Inc. Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and control
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US9435029B2 (en) 2010-08-29 2016-09-06 Advanced Energy Industries, Inc. Wafer chucking system for advanced plasma ion energy processing systems
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
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US9287092B2 (en) * 2009-05-01 2016-03-15 Advanced Energy Industries, Inc. Method and apparatus for controlling ion energy distribution
US8329557B2 (en) * 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
US9309594B2 (en) 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
US8869742B2 (en) * 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
US9184028B2 (en) 2010-08-04 2015-11-10 Lam Research Corporation Dual plasma volume processing apparatus for neutral/ion flux control
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US8723423B2 (en) 2011-01-25 2014-05-13 Advanced Energy Industries, Inc. Electrostatic remote plasma source
US8884525B2 (en) 2011-03-22 2014-11-11 Advanced Energy Industries, Inc. Remote plasma source generating a disc-shaped plasma
US10225919B2 (en) 2011-06-30 2019-03-05 Aes Global Holdings, Pte. Ltd Projected plasma source
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US9210790B2 (en) 2012-08-28 2015-12-08 Advanced Energy Industries, Inc. Systems and methods for calibrating a switched mode ion energy distribution system
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
US20160097118A1 (en) * 2014-10-01 2016-04-07 Seagate Technology Llc Inductively Coupled Plasma Enhanced Chemical Vapor Deposition
US20170140900A1 (en) * 2015-11-13 2017-05-18 Applied Materials, Inc. Uniform low electron temperature plasma source with reduced wafer charging and independent control over radical composition
CN111788654B (zh) 2017-11-17 2023-04-14 先进工程解决方案全球控股私人有限公司 等离子体处理系统中的调制电源的改进应用
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8307782B2 (en) 2007-12-26 2012-11-13 Kochi Industrial Promotion Center Deposition apparatus and deposition method

Also Published As

Publication number Publication date
KR100267959B1 (ko) 2000-11-01
KR940022720A (ko) 1994-10-21
US5487785A (en) 1996-01-30

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