TW265440B - - Google Patents
Info
- Publication number
- TW265440B TW265440B TW083102339A TW83102339A TW265440B TW 265440 B TW265440 B TW 265440B TW 083102339 A TW083102339 A TW 083102339A TW 83102339 A TW83102339 A TW 83102339A TW 265440 B TW265440 B TW 265440B
- Authority
- TW
- Taiwan
Links
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3227—Exchange coupling via one or more magnetisable ultrathin or granular films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Materials of the active region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US5633193A | 1993-04-30 | 1993-04-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW265440B true TW265440B (enExample) | 1995-12-11 |
Family
ID=22003708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW083102339A TW265440B (enExample) | 1993-04-30 | 1994-03-17 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5476680A (enExample) |
| EP (1) | EP0622781B1 (enExample) |
| JP (1) | JP2669595B2 (enExample) |
| KR (1) | KR0140551B1 (enExample) |
| CN (1) | CN1062670C (enExample) |
| DE (1) | DE69419202T2 (enExample) |
| TW (1) | TW265440B (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5828525A (en) * | 1994-03-15 | 1998-10-27 | Kabushiki Kaisha Toshiba | Differential detection magnetoresistance head |
| US5652054A (en) * | 1994-07-11 | 1997-07-29 | Kabushiki Kaisha Toshiba | Magnetic recording media having a magnetic thin film made of magnetic metals grains and nonmagnetic matrix |
| JPH0832141A (ja) * | 1994-07-11 | 1996-02-02 | Nec Corp | 人工格子薄膜磁気センサ |
| US5576914A (en) * | 1994-11-14 | 1996-11-19 | Read-Rite Corporation | Compact read/write head having biased GMR element |
| US5773156A (en) * | 1995-01-26 | 1998-06-30 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
| US5774783A (en) | 1995-03-17 | 1998-06-30 | Fujitsu Limited | Magnetic recording medium |
| US5585986A (en) * | 1995-05-15 | 1996-12-17 | International Business Machines Corporation | Digital magnetoresistive sensor based on the giant magnetoresistance effect |
| US5824165A (en) * | 1995-09-01 | 1998-10-20 | The Regents, University Of California | Giant magnetoresistive heterogeneous alloys and method of making same |
| DE19614460A1 (de) * | 1996-04-12 | 1997-10-16 | Bosch Gmbh Robert | Verfahren zur Herstellung eines GMR-Brückensensors sowie GMR-Brückensensor |
| US6166539A (en) * | 1996-10-30 | 2000-12-26 | Regents Of The University Of Minnesota | Magnetoresistance sensor having minimal hysteresis problems |
| US5747997A (en) * | 1996-06-05 | 1998-05-05 | Regents Of The University Of Minnesota | Spin-valve magnetoresistance sensor having minimal hysteresis problems |
| US5696655A (en) * | 1996-07-30 | 1997-12-09 | Nec Research Institute, Inc. | Self-biasing non-magnetic giant magnetoresistance |
| US5793279A (en) * | 1996-08-26 | 1998-08-11 | Read-Rite Corporation | Methods and compositions for optimizing interfacial properties of magnetoresistive sensors |
| JPH10326920A (ja) * | 1997-03-26 | 1998-12-08 | Delta Tsuuring:Kk | 磁気抵抗効果センサー及びその製造方法 |
| FR2771511B1 (fr) * | 1997-11-25 | 2000-02-04 | Thomson Csf | Capteur de champ magnetique et procede de fabrication de ce capteur |
| DE19843349A1 (de) * | 1998-09-22 | 2000-03-23 | Bosch Gmbh Robert | Magnetoresistives Sensorelement, insbesondere Winkelsensorelement |
| DE19908054C2 (de) * | 1999-02-25 | 2001-06-28 | Forschungszentrum Juelich Gmbh | Ungekoppelter GMR-Sensor |
| JP4496320B2 (ja) | 1999-03-25 | 2010-07-07 | 独立行政法人産業技術総合研究所 | 磁気抵抗効果薄膜 |
| US6610602B2 (en) | 1999-06-29 | 2003-08-26 | The Research Foundation Of State University Of New York | Magnetic field sensor and method of manufacturing same using a self-organizing polymer mask |
| US6479096B1 (en) | 1999-12-03 | 2002-11-12 | Read-Rite Corporation | Method for manufacturing a GMR spin valve having a smooth interface between magnetic and non-magnetic layers |
| JP2002015498A (ja) * | 2000-06-29 | 2002-01-18 | Fujitsu Ltd | センス電流の設定方法 |
| JP2003198004A (ja) * | 2001-12-27 | 2003-07-11 | Fujitsu Ltd | 磁気抵抗効果素子 |
| RU2316783C2 (ru) * | 2002-07-26 | 2008-02-10 | Роберт Бош Гмбх | Магниторезистивная слоистая система и чувствительный элемент на основе такой слоистой системы |
| JP4423658B2 (ja) * | 2002-09-27 | 2010-03-03 | 日本電気株式会社 | 磁気抵抗素子及びその製造方法 |
| US7034374B2 (en) * | 2003-08-22 | 2006-04-25 | Micron Technology, Inc. | MRAM layer having domain wall traps |
| JP4594679B2 (ja) * | 2004-09-03 | 2010-12-08 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置、および磁気メモリ |
| US20090086384A1 (en) * | 2007-10-02 | 2009-04-02 | Kei Hirata | Magneto-resistance effect element including ferromagnetic layer having granular structure |
| JP5879854B2 (ja) * | 2011-09-16 | 2016-03-08 | 株式会社豊田中央研究所 | ナノヘテロ構造磁気抵抗素子、その製造方法、および磁気センサ |
| RU2750855C2 (ru) * | 2016-12-09 | 2021-07-05 | Конинклейке Филипс Н.В. | Исполнительное устройство и способ для него |
| GB2582123B (en) | 2018-01-25 | 2021-04-28 | Endomagnetics Ltd | Systems and methods for detecting magnetic markers for surgical guidance |
| US11169226B2 (en) * | 2019-08-27 | 2021-11-09 | Western Digital Technologies, Inc. | Magnetic sensor bias point adjustment method |
| WO2022070378A1 (ja) * | 2020-10-01 | 2022-04-07 | Tdk株式会社 | 磁壁移動素子および磁気アレイ |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4103315A (en) * | 1977-06-24 | 1978-07-25 | International Business Machines Corporation | Antiferromagnetic-ferromagnetic exchange bias films |
| JPH07105006B2 (ja) * | 1985-11-05 | 1995-11-13 | ソニー株式会社 | 磁気抵抗効果型磁気ヘツド |
| US4879619A (en) * | 1988-03-28 | 1989-11-07 | International Business Machines Corporation | Magnetoresistive read transducer |
| DE3820475C1 (enExample) * | 1988-06-16 | 1989-12-21 | Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De | |
| US5005096A (en) * | 1988-12-21 | 1991-04-02 | International Business Machines Corporation | Magnetoresistive read transducer having hard magnetic shunt bias |
| US5043693A (en) * | 1990-08-13 | 1991-08-27 | The United States Of America As Represented By The Secretary Of The Navy | Heterogeneous magnetoresistive layer |
| US5159513A (en) * | 1991-02-08 | 1992-10-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
| FR2692711B1 (fr) * | 1992-06-23 | 1996-02-09 | Thomson Csf | Transducteur magnetoresistif. |
| JP3309922B2 (ja) * | 1992-10-26 | 2002-07-29 | 日立マクセル株式会社 | 磁気抵抗素子用磁性薄膜およびその製造方法 |
-
1994
- 1994-03-17 TW TW083102339A patent/TW265440B/zh active
- 1994-03-30 CN CN94103796A patent/CN1062670C/zh not_active Expired - Fee Related
- 1994-03-30 KR KR1019940006481A patent/KR0140551B1/ko not_active Expired - Fee Related
- 1994-04-07 EP EP94302475A patent/EP0622781B1/en not_active Expired - Lifetime
- 1994-04-07 DE DE69419202T patent/DE69419202T2/de not_active Expired - Fee Related
- 1994-04-12 JP JP6073496A patent/JP2669595B2/ja not_active Expired - Fee Related
-
1995
- 1995-04-14 US US08/422,735 patent/US5476680A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69419202D1 (de) | 1999-07-29 |
| CN1094835A (zh) | 1994-11-09 |
| DE69419202T2 (de) | 2000-01-20 |
| CN1062670C (zh) | 2001-02-28 |
| EP0622781A2 (en) | 1994-11-02 |
| EP0622781B1 (en) | 1999-06-23 |
| EP0622781A3 (en) | 1996-08-07 |
| JP2669595B2 (ja) | 1997-10-29 |
| KR0140551B1 (ko) | 1998-07-15 |
| KR940024665A (ko) | 1994-11-18 |
| US5476680A (en) | 1995-12-19 |
| JPH06326377A (ja) | 1994-11-25 |