TW262626B - - Google Patents

Info

Publication number
TW262626B
TW262626B TW081105485A TW81105485A TW262626B TW 262626 B TW262626 B TW 262626B TW 081105485 A TW081105485 A TW 081105485A TW 81105485 A TW81105485 A TW 81105485A TW 262626 B TW262626 B TW 262626B
Authority
TW
Taiwan
Prior art keywords
plasma
substrate
gas
reaction chamber
bell jar
Prior art date
Application number
TW081105485A
Other languages
English (en)
Chinese (zh)
Original Assignee
De Beers Ind Diamond
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by De Beers Ind Diamond filed Critical De Beers Ind Diamond
Application granted granted Critical
Publication of TW262626B publication Critical patent/TW262626B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • C23C16/27Diamond only
    • C23C16/274Diamond only using microwave discharges
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/02Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Composite Materials (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
TW081105485A 1991-06-28 1992-07-10 TW262626B (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB919114014A GB9114014D0 (en) 1991-06-28 1991-06-28 Plasma assisted diamond synthesis

Publications (1)

Publication Number Publication Date
TW262626B true TW262626B (OSRAM) 1995-11-11

Family

ID=10697507

Family Applications (1)

Application Number Title Priority Date Filing Date
TW081105485A TW262626B (OSRAM) 1991-06-28 1992-07-10

Country Status (10)

Country Link
EP (1) EP0520832B1 (OSRAM)
JP (1) JPH05239656A (OSRAM)
KR (1) KR930000181A (OSRAM)
AT (1) ATE135752T1 (OSRAM)
AU (1) AU1862392A (OSRAM)
CA (1) CA2072455A1 (OSRAM)
DE (1) DE69209163T2 (OSRAM)
GB (1) GB9114014D0 (OSRAM)
TW (1) TW262626B (OSRAM)
ZA (1) ZA924765B (OSRAM)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5328550A (en) * 1992-10-02 1994-07-12 At&T Bell Laboratories Thinning a diamond body by means of molten rare-earth-containing alloys
DE10156615B4 (de) * 2001-11-17 2004-10-07 Forschungszentrum Karlsruhe Gmbh Einrichtung zur Erzeugung eines örtlich variierbaren Elektron-Zyklotron-Resonanz-Mikrowellen-Niederdruckplasmas
US6845734B2 (en) 2002-04-11 2005-01-25 Micron Technology, Inc. Deposition apparatuses configured for utilizing phased microwave radiation
RU2215061C1 (ru) 2002-09-30 2003-10-27 Институт прикладной физики РАН Высокоскоростной способ осаждения алмазных пленок из газовой фазы в плазме свч-разряда и плазменный реактор для его реализации
US8555921B2 (en) 2002-12-18 2013-10-15 Vapor Technologies Inc. Faucet component with coating
US7866343B2 (en) 2002-12-18 2011-01-11 Masco Corporation Of Indiana Faucet
US6904935B2 (en) 2002-12-18 2005-06-14 Masco Corporation Of Indiana Valve component with multiple surface layers
US7866342B2 (en) 2002-12-18 2011-01-11 Vapor Technologies, Inc. Valve component for faucet
US8220489B2 (en) 2002-12-18 2012-07-17 Vapor Technologies Inc. Faucet with wear-resistant valve component
US20070026205A1 (en) 2005-08-01 2007-02-01 Vapor Technologies Inc. Article having patterned decorative coating
RU2357001C2 (ru) * 2007-07-25 2009-05-27 Ооо "Твинн" Способ получения изделий из поликристаллического алмаза
DE102008035917B4 (de) * 2008-08-01 2010-06-17 Eads Deutschland Gmbh Blitzschutz von Radomen und Sende-/Empfangsvorrichtungen
CN113373425B (zh) * 2020-03-10 2022-06-10 宏硕系统股份有限公司 人造钻石生产装置及其微波发射模块
US11155915B1 (en) 2020-04-13 2021-10-26 Wave Power Technology Inc. Artificial diamond production device and microwave transmitting module thereof
JP7074795B2 (ja) * 2020-04-21 2022-05-24 宏碩系統股▲フン▼有限公司 合成ダイヤモンドの製造装置及びこれに用いられるマイクロ波発射モジュール
US12084759B2 (en) 2022-01-07 2024-09-10 Wave Power Technology Inc. Artificial diamond plasma production device
JP7250969B1 (ja) * 2022-02-08 2023-04-03 宏碩系統股▲フン▼有限公司 人工ダイヤモンドプラズマ生成機器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4434188A (en) * 1981-12-17 1984-02-28 National Institute For Researches In Inorganic Materials Method for synthesizing diamond
AU560521B2 (en) * 1982-10-18 1987-04-09 Energy Conversion Devices Inc. Layered amorphous semiconductor alloys

Also Published As

Publication number Publication date
EP0520832A1 (en) 1992-12-30
ZA924765B (en) 1993-03-31
JPH05239656A (ja) 1993-09-17
ATE135752T1 (de) 1996-04-15
DE69209163D1 (de) 1996-04-25
EP0520832B1 (en) 1996-03-20
KR930000181A (ko) 1993-01-15
AU1862392A (en) 1993-01-07
CA2072455A1 (en) 1992-12-29
GB9114014D0 (en) 1991-08-14
DE69209163T2 (de) 1996-08-01

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