CA2072455A1 - Plasma assisted diamond synthesis - Google Patents
Plasma assisted diamond synthesisInfo
- Publication number
- CA2072455A1 CA2072455A1 CA002072455A CA2072455A CA2072455A1 CA 2072455 A1 CA2072455 A1 CA 2072455A1 CA 002072455 A CA002072455 A CA 002072455A CA 2072455 A CA2072455 A CA 2072455A CA 2072455 A1 CA2072455 A1 CA 2072455A1
- Authority
- CA
- Canada
- Prior art keywords
- plasma
- reaction chamber
- substrate
- microwave radiation
- focusing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 21
- 229910003460 diamond Inorganic materials 0.000 title claims description 18
- 230000015572 biosynthetic process Effects 0.000 title description 3
- 238000003786 synthesis reaction Methods 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000006243 chemical reaction Methods 0.000 claims abstract description 49
- 239000007789 gas Substances 0.000 claims abstract description 41
- 230000005855 radiation Effects 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 19
- 239000001257 hydrogen Substances 0.000 claims abstract description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 9
- 150000001722 carbon compounds Chemical class 0.000 claims abstract description 8
- 230000001419 dependent effect Effects 0.000 claims abstract description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- 239000000203 mixture Substances 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 239000002243 precursor Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 230000003993 interaction Effects 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 210000002381 plasma Anatomy 0.000 description 62
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000006260 foam Substances 0.000 description 3
- 229910052754 neon Inorganic materials 0.000 description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- -1 carbon ions Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 102000004856 Lectins Human genes 0.000 description 1
- 108090001090 Lectins Proteins 0.000 description 1
- 239000006091 Macor Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000005574 cross-species transmission Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000002523 lectin Substances 0.000 description 1
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9114014.5 | 1991-06-28 | ||
| GB919114014A GB9114014D0 (en) | 1991-06-28 | 1991-06-28 | Plasma assisted diamond synthesis |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2072455A1 true CA2072455A1 (en) | 1992-12-29 |
Family
ID=10697507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002072455A Abandoned CA2072455A1 (en) | 1991-06-28 | 1992-06-26 | Plasma assisted diamond synthesis |
Country Status (10)
| Country | Link |
|---|---|
| EP (1) | EP0520832B1 (OSRAM) |
| JP (1) | JPH05239656A (OSRAM) |
| KR (1) | KR930000181A (OSRAM) |
| AT (1) | ATE135752T1 (OSRAM) |
| AU (1) | AU1862392A (OSRAM) |
| CA (1) | CA2072455A1 (OSRAM) |
| DE (1) | DE69209163T2 (OSRAM) |
| GB (1) | GB9114014D0 (OSRAM) |
| TW (1) | TW262626B (OSRAM) |
| ZA (1) | ZA924765B (OSRAM) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5328550A (en) * | 1992-10-02 | 1994-07-12 | At&T Bell Laboratories | Thinning a diamond body by means of molten rare-earth-containing alloys |
| DE10156615B4 (de) * | 2001-11-17 | 2004-10-07 | Forschungszentrum Karlsruhe Gmbh | Einrichtung zur Erzeugung eines örtlich variierbaren Elektron-Zyklotron-Resonanz-Mikrowellen-Niederdruckplasmas |
| US6845734B2 (en) | 2002-04-11 | 2005-01-25 | Micron Technology, Inc. | Deposition apparatuses configured for utilizing phased microwave radiation |
| RU2215061C1 (ru) | 2002-09-30 | 2003-10-27 | Институт прикладной физики РАН | Высокоскоростной способ осаждения алмазных пленок из газовой фазы в плазме свч-разряда и плазменный реактор для его реализации |
| US8555921B2 (en) | 2002-12-18 | 2013-10-15 | Vapor Technologies Inc. | Faucet component with coating |
| US7866343B2 (en) | 2002-12-18 | 2011-01-11 | Masco Corporation Of Indiana | Faucet |
| US6904935B2 (en) | 2002-12-18 | 2005-06-14 | Masco Corporation Of Indiana | Valve component with multiple surface layers |
| US7866342B2 (en) | 2002-12-18 | 2011-01-11 | Vapor Technologies, Inc. | Valve component for faucet |
| US8220489B2 (en) | 2002-12-18 | 2012-07-17 | Vapor Technologies Inc. | Faucet with wear-resistant valve component |
| US20070026205A1 (en) | 2005-08-01 | 2007-02-01 | Vapor Technologies Inc. | Article having patterned decorative coating |
| RU2357001C2 (ru) * | 2007-07-25 | 2009-05-27 | Ооо "Твинн" | Способ получения изделий из поликристаллического алмаза |
| DE102008035917B4 (de) * | 2008-08-01 | 2010-06-17 | Eads Deutschland Gmbh | Blitzschutz von Radomen und Sende-/Empfangsvorrichtungen |
| CN113373425B (zh) * | 2020-03-10 | 2022-06-10 | 宏硕系统股份有限公司 | 人造钻石生产装置及其微波发射模块 |
| US11155915B1 (en) | 2020-04-13 | 2021-10-26 | Wave Power Technology Inc. | Artificial diamond production device and microwave transmitting module thereof |
| JP7074795B2 (ja) * | 2020-04-21 | 2022-05-24 | 宏碩系統股▲フン▼有限公司 | 合成ダイヤモンドの製造装置及びこれに用いられるマイクロ波発射モジュール |
| US12084759B2 (en) | 2022-01-07 | 2024-09-10 | Wave Power Technology Inc. | Artificial diamond plasma production device |
| JP7250969B1 (ja) * | 2022-02-08 | 2023-04-03 | 宏碩系統股▲フン▼有限公司 | 人工ダイヤモンドプラズマ生成機器 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4434188A (en) * | 1981-12-17 | 1984-02-28 | National Institute For Researches In Inorganic Materials | Method for synthesizing diamond |
| AU560521B2 (en) * | 1982-10-18 | 1987-04-09 | Energy Conversion Devices Inc. | Layered amorphous semiconductor alloys |
-
1991
- 1991-06-28 GB GB919114014A patent/GB9114014D0/en active Pending
-
1992
- 1992-06-26 AU AU18623/92A patent/AU1862392A/en not_active Abandoned
- 1992-06-26 ZA ZA924765A patent/ZA924765B/xx unknown
- 1992-06-26 CA CA002072455A patent/CA2072455A1/en not_active Abandoned
- 1992-06-27 KR KR1019920011419A patent/KR930000181A/ko not_active Withdrawn
- 1992-06-29 AT AT92305950T patent/ATE135752T1/de not_active IP Right Cessation
- 1992-06-29 JP JP4210619A patent/JPH05239656A/ja active Pending
- 1992-06-29 EP EP92305950A patent/EP0520832B1/en not_active Expired - Lifetime
- 1992-06-29 DE DE69209163T patent/DE69209163T2/de not_active Expired - Fee Related
- 1992-07-10 TW TW081105485A patent/TW262626B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP0520832A1 (en) | 1992-12-30 |
| ZA924765B (en) | 1993-03-31 |
| JPH05239656A (ja) | 1993-09-17 |
| ATE135752T1 (de) | 1996-04-15 |
| DE69209163D1 (de) | 1996-04-25 |
| EP0520832B1 (en) | 1996-03-20 |
| KR930000181A (ko) | 1993-01-15 |
| AU1862392A (en) | 1993-01-07 |
| TW262626B (OSRAM) | 1995-11-11 |
| GB9114014D0 (en) | 1991-08-14 |
| DE69209163T2 (de) | 1996-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |