TW253856B - Method of solder bonding, and article produced by the method - Google Patents
Method of solder bonding, and article produced by the method Download PDFInfo
- Publication number
- TW253856B TW253856B TW084101216A TW84101216A TW253856B TW 253856 B TW253856 B TW 253856B TW 084101216 A TW084101216 A TW 084101216A TW 84101216 A TW84101216 A TW 84101216A TW 253856 B TW253856 B TW 253856B
- Authority
- TW
- Taiwan
- Prior art keywords
- solder
- layer
- soldering
- pad
- substrate
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/36—Mechanical coupling means
- G02B6/3628—Mechanical coupling means for mounting fibres to supporting carriers
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- G—PHYSICS
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4236—Fixing or mounting methods of the aligned elements
- G02B6/4238—Soldering
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- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
- Optical Couplings Of Light Guides (AREA)
- Semiconductor Lasers (AREA)
- Joining Of Glass To Other Materials (AREA)
Description
A7 B7 ^53856 五、發明説明( 發明範圍 在發明係關於軟焊結合。 發明背置 在許多技術領域中都需要用到軟焊以使兩.物體相結合 。例如,US專利第5307434號提出了 一個具有矽基材本體 的光嫌雷射傳送器,即同時將雷射與光嫌線束以軟焊結合 於基材上。 .<LV. 雖然軟焊既方便且應用廣泛,但仍存有些&問題。例 如,在焊接光嫌於脆性基材時,即發現在軟焊3^^;或其 附近有基材破裂的情形。這種破裂是極不希望發生的,/所 以希望能有一種軟焊法可以減少或消除這種破裂的問題。 本申請害即提出了這樣的方法。 發明概述 我們發現用以往的軟焊技術,在焊料與基材之間會因 爲熱膨脹的不同而造成應力導致接合失效和/或基材破裂 。我們已找出了能有效分散應力的方法,因而能確實的消 除先前所說的失效。 詳細地說,本發明係以已知成份的焊料實施軟焊於一 個含有焊接墊在表面的第一物體及藉焊接墊與第一物體相 接的第二物體的物品上。例如,焊料是MS η焊料,其中 Μ代表金或銀。MS η並不意謂著Μ與錫以相同莫耳比例 存在。重要的是,該物品具有一層位在焊接墊上的限制層 ,該限制層上有一開口貫穿限制層到焊接墊上(該開口不 一定要是連績的邊緣)。限制層在焊接溫度下與已知成份 本紙張尺度適用中國國家樣準(CNS ) Α4说格(210X297公釐) J— - 訂 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 經濟部中央標準局員工消費合作杜印製 <53856 A7 B7 五、發明説明(2 ) 的熔融焊料是不易產生反應的。焊接墊具有在焊接溫度下 能與已知成份的熔融焊料作用之材料作成的第一(作用) 層。因此,當熔融的焊料冷却至其熔點以下,重新凝固的 材料會在該限制層之下延伸到該開口外去。 上述的作用涉及熔融焊料與作用層之間的交互作用, 特別包括此兩者之間的擴散作用,並隨之局部降低了作用 層材料的熔點。 本發明也實施於一種具有第一物體和以軟焊接合於第 一物體之第二物體的物品。該方法包括了提供具有焊接墊 於基表面的第一物體,一些位於焊接墊上已知成份的焊料 ,和將焊料與第二物體接觸並加熱焊料至高於熔化溫度以 上之焊接溫度的方法。它還包括了允許焊料冷却以重新凝 固焊料。 重要的是,本方法還包括提供了位於焊接墊之上的限 制層,該限制層具有開口貫穿至焊接墊且它在焊接溫度下 與焊料不易產生反應。同時,該方法也包括了提供一種具 有能在焊接溫度下與焊料發生作用之第一層作用材料的焊 接墊,可使焊料在冷却後,重新凝固的材料能夠在該限制 層之下延伸於開口外。 這項新的方法很顯然地並不只限於將光織焊接於矽基 材上之用,它具有廣泛的應用性。例如,它可以用於將矽 晶片焊接於矽基材的”晶圃比例整合”應用上。 附圖簡述 圖1爲以往軟焊接合技術之圇示; 本紙張尺度逋用中國國家標準(CNS ) A4規格(21 Ox297公釐) (請先閲讀背面之注意事項再填寫本頁) -s Γ 25385β at Β7 經濟部中央標準局男工消費合作杜印製 五、發明説明(3 ) 圖2爲本發明在焊接前焊接區域的例子的圖示: 圖3爲本發明焊接完成後的圖示: 詳細說明 我們發現在許多第一物體/焊料/第二物體焊接接合 時,存在有明顯的墊膨脹的差異,例如在焊料與第一物體 (基材)間。這種差異會造成顯著的應力,致使接合失效 甚或基材破裂,尤其是當基材含有矽或是玻璃之類的脆性 材料時。這個問題尤其是在熔融的焊料未用如焊接墊或焊 接閘等方法限制於基材表面的預設區域內時更爲明顯。如 圖1所示,熔融的焊材沾附於焊接埜但並未散開於其上, 而呈如圖中假設之與基材有較大接觸角度的形狀。通常道 會造成應力集中於空氣/焊料介面處的基材上,而產生如 破裂17的裂痕。在圖1中,編第11至15依序表示第 一物體,第二物體,第一物體上的接合墊,第2物髋上的 接合墊及重新凝固之焊料。第一物體爲比例中之包括矽本 體1 8及二氧化矽層1 6的複合物。在層1 6處的箭頭(ί) 示該層內的應力方向,此係基於焊料之熱膨眼係數大於基' 材之熱膨脹係數的假設。若此應力夠大,則基材便會發生 破裂。 圓2則爲本發明在焊接之前,基材/焊料之組合的圖 示,其中編號2 1至2 4依序表示基材(可以是複合物) ,接合墊,限制層,及位於限制層開口內的焊料塊。圓示 之接合墊包括了選用層2 5及作用材料層2 6。選用層可 以是多層結構,例如包括了可使基材與焊接墊較易接合的 (請先閲讀背面之注意事項再填寫本頁) 一 本紙張尺度適用中國國家標準(CNS ) Α4规格(210 X 297公釐) 經濟部中央揉準局貝工消費合作社印製 -53856 A7 B7____ 五、發明説明(4 ) 黏附層(如鈦),和用以防止黏附層與覆蓋層(如金)交 互作用的阻隔層(如鉑)等層所構成。這些結構已爲該技 術所硏發,另外地可以在鈦層與鉑層間採用氮化鈦層。 作用層是用以在焊接溫度下與焊料產生作用,而使熔 融的材料可以擴展至限制層的開口之外。熔融材料在限制 層下的橫向延伸,會形成如腳般楔形的焊料塊將限制層稍 稍頂起。此作用如圖3所示,圖中第二物體3 0焊接於第 —物體2 1 ,而重新凝固的材料2 4,延伸於限制層2 3 之下。材料2 6是圖2中作用層2 6的殘餘未熔融的部份 ,編號3 2則表示介於原作用層及重新凝固的材料之間的 介面。未熔融的作用層是可以選擇性的保留的。 我們目前相信熔融的焊料(如共融的錫金,包含有約 8 0 %重量的金)與作用層的材料作用後,在局部形成了 成份不同於原焊料的熔融合金。熔融的焊料消耗(熔解) 了在開口中的作用層材料,並開始在限制層下橫向延伸, 並漸渐增加作用材料的含量。當在限制層下固/液態界面 處的熔融混合物中作用材料的含量愈來來愈多,界面的延 伸便愈來愈慢最後終於停止。在許多例子中,熔融材料不 只與作用層材料發生作用,而且與與作用層下的材料發生 作用。例如,我們相信錫與限制層的鉑材料發生作用,這 種作用可能更增强了本發明技術之效果。 以上對此新方法之作用機柳的描述僅供說明之用,本 發明並不需依賴所以上所提出之機構的正確性。 依本發明之方法產生之焊接接合的幾合形狀可以有效 本紙張尺度適用中國國家橾率(匚~5)久4規格(210'犬297公釐>_ I—-:-----^4------1T------f (請先閱讀背面之注意事項再填寫本頁) _ 經濟部中央標準局員工消費合作杜印装 ^53856 A7 ____B7 五、發明説明(5 ) 的分佈於接合與非接合面之間,隨之,應力也可分散於較 大體積之基材上。結果可以大幅減少基材破裂的情形。例 如,在一項特別的試作中,將光纖焊接於3 5個舊有技術 之結構上(即包括有焊接墊但沒有限制層及作用層)。檢 驗最後的產品發現,3 5個試件中有3 3個基材都發生破 裂。在另一項試作中,不同於前述只使用接合墊的例子, 而是將光纖焊接於15個如本發明之結構上,例如包含 0.5# m厚之金的作用層及0.1# m厚之鉻的限制層的結構。 檢驗結果發現沒有結構破裂發生。再將其中10個以本發明 焊接之結構作溫度循環(-40°C到8 5 °C做4 0次)也沒有 導致破裂。很明顯的,這些試驗證明本發明能有效的消除 上述破裂的問題。 例3 :將光嫌以軟焊接合於如U S專利第5307434號 所述之基材上。其特點在於矽本體上有以傳統方法成形之 二氧化矽薄膜(0 · 4至2 0i/m厚)。薄膜電阻層被置 放並成形於薄膜電熱器中。中間介電層(如約1 0 0 nm厚 的二氧化矽或氮化矽)藉PECVD置放並成形,以使介 面質在光纖焊接處保留但在其它地方被除去。焊接墊之形 成如下:黏附層(例如,1 0 Onm厚的鈦,或5 0nm厚的 鈦和2 5 nm的氮化鈦),接著是阻隔層(如,0.2# m的 鉑),及最外層的作用材料層(如,0 . 5//m的金)。 可以用任何方便的方法產生這些材料層,如濺鍍或電子束 蒸鍍。層稹之材料層再成形成所薔之焊接墊。接著再屠積 限制層(如0 . 的鈦或銘),然後再以傅統的成形 本紙張尺度適用中國國家標準(CNS > Α4規格(210X297公釐) I--.------—— (請先閲讀背面之注意事項再填寫本頁) 訂 253S56 at B7 經濟部中央標準局員工消費合作社印製 五、發明説明(6 ) 方法將在焊接墊的作用層材料上的限制層成形出延伸穿過 限制層的開口。最後,再以電子束蒸鍍將薄膜焊料(如, 6 厚的共融錫金合金)透過開口蒸鍍於作用層材料上 。再置放經適度硬化的光纖維於開口內的焊料之上後,加 熱電熱器使焊料熔化。焊接溫度大約3 2 0 °C並持績3 0 秒。在切斷電熱器之後,焊料重新凝固而將光繊接合於矽 本體上。以光學顯微鏡觀察發現,限制層不再爲平行於其 下之矽表面的平面,而是有些凸起如圖3中所示,這表示 固/液態介面在限制層之下橫向移動過。在限制層之下的 重新凝固材料經成份分析顯示較共融之成份含有更多的金 Ο 雖然上述的討論都採用錫金焊料及金作用層,但本發 明並不只限於此。事實上,本發明可用於任何多種成份之 焊料(如,共融錫銀,或錫鉛),並採用適當的作用層材 料°必需選擇具有較焊料高的熔點且在焊接溫度下易與焊 料作用的材料爲作用材料,同時這種作用材料還要具有少 置局部加入熔融焊料即能明顯改變熔融材料之局部冷凝溫 度的特性。例如,若焊料是共融錫銀或錫鉛,則適用之作 用材料是金。必須注意的是,選用的作用材料並不只限於 所用的焊料成份中有的元素。 (請先閲讀背面之注意事項再填寫本頁) 訂 本紙張尺度適用中國國家棣準(CNS ) A4規格(210X297公釐)
Claims (1)
- 經濟部中央標準局貝工消费合作社印製 A8253856 I六、申請專利範圍 1 · 一種物品,包括 a)第一物體(11),具有焊接墊(22)於第一 物體之表面上: b )第二物體(1 2 ),經由已知成份之焊料在焊接 墊處與第一物體相連接; 其特徵在於此物品還包括 c )限制層,位於該焊接墊之上具有開口貫穿,該限 制層在焊接溫度下與已知成份之熔融焊料不易產生反應: 其中 d )焊接墊包含作用材料之第一層,該材料在焊接溫 度下可與已知成份之熔融焊料作用,因此,當焊料冷却至 熔點之下後,重新凝固之熔融材料(2 4’ )會在該限制 層之下延伸於該開口之外。 2 ·如申請專利範圍第1項之物品,其中焊料是MSn ,該作用材料是Μ,此處Μ是選自包括金和銀的群組。 3·如申請專利範圍第2項的物品,其中限制層的材 料是選自包括鈦和鉻的群組。 4 ·如申請專利範圍第3項的物品,其中第一物體包 括了一層2氧化矽及依序包含以下各層的焊接墊, i) 鈦層、鉑層及金作用層:或包括 ii) 鈦層、氮化鈦層、鉑層及金作用層。 5 ·如申請專利範園第1項的物品,還包括了電阻器 用以加熱至焊接溫度。 6 ·如申請專利範園第1項的物品,其中第二物體是 「--:------^ -4-------、訂 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標隼(CNS M4規格(210X297公釐) 11 253856 ii D8 六、申請專利範圍 光嫌維。 7 ·—種軟焊結合之方法,用來製作一個包括了第一 物體和以軟焊接合於第一物體之第二物體的物品,該方法 包括 a )提供具有焊接墊於其表面上之第一物體,且有一 些已知成份之焊料於焊接墊上; b )將該一些焊料接觸於第二物體,加熱焊料至高於 焊料之熔化溫度的焊接溫度,並使焊料冷却而使之重新凝 LLa| · 固, 其特點在於該方法還包括 C )提供了限制層於焊接墊上,該限制層有一開口貫 穿且在焊接溫度下與該焊料不易產生作用;且 d )提供了焊接墊,它包括具有在焊接溫度下可與該 焊料作用之作用材料的第一層,可以使焊料在冷却之後, 重新凝固之溶融材料會在該限制層之下延伸到該開口之外 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局負工消费合作社印装 本紙張尺度適用中國國家橾準(CNS ) A4規格(210X297公釐} 12
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1995
- 1995-02-11 TW TW084101216A patent/TW253856B/zh active
- 1995-11-09 US US08/555,933 patent/US5622788A/en not_active Expired - Lifetime
- 1995-12-01 EP EP95308697A patent/EP0717441A3/en not_active Withdrawn
- 1995-12-09 KR KR1019950048063A patent/KR960021335A/ko not_active Application Discontinuation
- 1995-12-13 JP JP07324471A patent/JP3078489B2/ja not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8139160B2 (en) | 2006-10-25 | 2012-03-20 | Mstar Semiconductor, Inc. | Television tuner with double quadrature mixing architecture |
US8139159B2 (en) | 2006-10-25 | 2012-03-20 | Mstar Semiconductor, Inc. | Single down-conversion television tuner |
US8212943B2 (en) | 2006-10-25 | 2012-07-03 | Mstar Semiconductor, Inc. | Triple-conversion television tuner |
Also Published As
Publication number | Publication date |
---|---|
EP0717441A3 (en) | 1997-05-02 |
EP0717441A2 (en) | 1996-06-19 |
KR960021335A (ko) | 1996-07-18 |
US5622788A (en) | 1997-04-22 |
JP3078489B2 (ja) | 2000-08-21 |
JPH08250851A (ja) | 1996-09-27 |
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