TW251379B - Process of polysilicon, Ge or Si-Ge thin film transistor - Google Patents

Process of polysilicon, Ge or Si-Ge thin film transistor

Info

Publication number
TW251379B
TW251379B TW83100725A TW83100725A TW251379B TW 251379 B TW251379 B TW 251379B TW 83100725 A TW83100725 A TW 83100725A TW 83100725 A TW83100725 A TW 83100725A TW 251379 B TW251379 B TW 251379B
Authority
TW
Taiwan
Prior art keywords
polysilicon
layer
gate
thin film
film transistor
Prior art date
Application number
TW83100725A
Other languages
English (en)
Inventor
Jiunn-Yann Chang
Horng-Jyh Lin
Shiaw-Yih Lin
Original Assignee
Nat Science Committee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Science Committee filed Critical Nat Science Committee
Priority to TW83100725A priority Critical patent/TW251379B/zh
Application granted granted Critical
Publication of TW251379B publication Critical patent/TW251379B/zh

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  • Thin Film Transistor (AREA)
TW83100725A 1994-01-28 1994-01-28 Process of polysilicon, Ge or Si-Ge thin film transistor TW251379B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW83100725A TW251379B (en) 1994-01-28 1994-01-28 Process of polysilicon, Ge or Si-Ge thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW83100725A TW251379B (en) 1994-01-28 1994-01-28 Process of polysilicon, Ge or Si-Ge thin film transistor

Publications (1)

Publication Number Publication Date
TW251379B true TW251379B (en) 1995-07-11

Family

ID=51401377

Family Applications (1)

Application Number Title Priority Date Filing Date
TW83100725A TW251379B (en) 1994-01-28 1994-01-28 Process of polysilicon, Ge or Si-Ge thin film transistor

Country Status (1)

Country Link
TW (1) TW251379B (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6342408B1 (en) * 1994-12-08 2002-01-29 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor memory device
US6690068B2 (en) 2000-06-12 2004-02-10 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors and semiconductor device
US6703265B2 (en) 2000-08-02 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6787807B2 (en) 2000-06-19 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6828587B2 (en) 2000-06-19 2004-12-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7381586B2 (en) 2005-06-16 2008-06-03 Industrial Technology Research Institute Methods for manufacturing thin film transistors that include selectively forming an active channel layer from a solution

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6342408B1 (en) * 1994-12-08 2002-01-29 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor memory device
US6545323B2 (en) 1994-12-08 2003-04-08 Kabushiki Kaisha Toshiba Semiconductor memory device including a pair of MOS transistors forming a detection circuit
US6690068B2 (en) 2000-06-12 2004-02-10 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors and semiconductor device
US7307282B2 (en) 2000-06-12 2007-12-11 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors and semiconductor device
US6787807B2 (en) 2000-06-19 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6828587B2 (en) 2000-06-19 2004-12-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6956235B2 (en) 2000-06-19 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6703265B2 (en) 2000-08-02 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7034337B2 (en) 2000-08-02 2006-04-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7368335B2 (en) 2000-08-02 2008-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7381586B2 (en) 2005-06-16 2008-06-03 Industrial Technology Research Institute Methods for manufacturing thin film transistors that include selectively forming an active channel layer from a solution

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