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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW83110647ApriorityCriticalpatent/TW247966B/en
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Publication of TW247966BpublicationCriticalpatent/TW247966B/en
A fabricating process of semiconductor-on-insulator which is applicable to one insulating substrate with a formed semiconductor layer includes: forming one mask on destined position of semiconductor, removing the semiconductor layer where is not covered by mask until the insulating substrate is exposed, defining active region on the insulating substrate; forming separating material to fill on the exposed insulating substrate, then removing the mask; forming one dielectric layer on active region, then forming one conducting layer on the dielectric layer and separating material, through lithography and etching defining gate electrode.
TW83110647A1994-11-161994-11-16Semiconductor device process
TW247966B
(en)