KR970063775A

KR970063775A - Method for manufacturing semiconductor transistor device

Info

Publication number: KR970063775A
Application number: KR1019960002874A
Authority: KR
Inventors: 정병태
Original assignee: 문정환; Lg 반도체 주식회사
Priority date: 1996-02-07
Filing date: 1996-02-07
Publication date: 1997-09-12

Abstract

본 발명에 의한 반도체 트랜지스터 소자의 제조방법은, 반도체기판 상에서 필드격리막에 의해 정의된 활성영역에 게이트절연막에 의해 반도체기판과 절연되는 게이트를 형성시키는 단계와, 게이트의 양측의 반도체기판에 필드격리막과 접합되지 않는 불순물영역을 형성시키는 단계를 포함하여 이루어진다.A method of manufacturing a semiconductor transistor device according to the present invention includes the steps of forming a gate insulated from a semiconductor substrate by a gate insulator film in an active region defined by a field isolating film on a semiconductor substrate, And forming an impurity region not to be bonded.

Description

Method for manufacturing semiconductor transistor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2도는 본 발명에 의한 반도체 트랜지스터 소자의 제조방법의 일실시예를 도시한 도면.FIG. 2 is a view showing an embodiment of a method of manufacturing a semiconductor transistor device according to the present invention. FIG.

Claims

A method of manufacturing a semiconductor transistor device comprising the steps of: forming a gate insulated from the semiconductor substrate by a gate insulating film in the active region defined by a field isolation film on a semiconductor substrate; And forming an impurity region not to be bonded to the semiconductor substrate.

2. The method according to claim 1, wherein a photoresist film is coated on the semiconductor substrate having the gate formed thereon, and a photolithography process using a mask defining a part between the gate and the field isolating film, Forming a low-concentration impurity region by ion-implanting a low-concentration impurity of a conductivity type opposite to that of the semiconductor substrate using the first photoresist pattern and the gate as a mask, A second photoresist pattern is formed by a photolithography process using a mask in which a photoresist pattern is removed, a sidewall insulation film is formed on both sidewalls of the gate, and a gate in which the sidewall insulation film is formed and a mask in which the first photoresist pattern is formed on the semiconductor substrate , Using the second photoresist pattern, the gate and the sidewall insulation film as masks, A method for fabricating a semiconductor transistor device, characterized in that the ion-implanting high concentration impurities of the semiconductor substrate and the opposite conductivity type to form impurity regions of the El Didier structure that is not bonded and the field separator.

※ Note: It is disclosed by the contents of the first application.