TW244397B - - Google Patents
Info
- Publication number
- TW244397B TW244397B TW082105018A TW82105018A TW244397B TW 244397 B TW244397 B TW 244397B TW 082105018 A TW082105018 A TW 082105018A TW 82105018 A TW82105018 A TW 82105018A TW 244397 B TW244397 B TW 244397B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/903,256 US5300320A (en) | 1992-06-23 | 1992-06-23 | Chemical vapor deposition from single organometallic precursors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW244397B true TW244397B (US06235095-20010522-C00021.png) | 1995-04-01 |
Family
ID=25417193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW082105018A TW244397B (US06235095-20010522-C00021.png) | 1992-06-23 | 1993-06-23 |
Country Status (7)
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5429989A (en) * | 1994-02-03 | 1995-07-04 | Motorola, Inc. | Process for fabricating a metallization structure in a semiconductor device |
| US5760462A (en) * | 1995-01-06 | 1998-06-02 | President And Fellows Of Harvard College | Metal, passivating layer, semiconductor, field-effect transistor |
| AU4695096A (en) * | 1995-01-06 | 1996-07-24 | National Aeronautics And Space Administration - Nasa | Minority carrier device |
| US5738721A (en) * | 1995-01-06 | 1998-04-14 | President And Fellows Of Harvard College | Liquid precursor and method for forming a cubic-phase passivating/buffer film |
| US6124427A (en) * | 1997-03-31 | 2000-09-26 | North Dakota State University | Organometallic single source precursors for inorganic films coatings and powders |
| US5906898A (en) * | 1997-09-18 | 1999-05-25 | M-C Power Corporation | Finned internal manifold oxidant cooled fuel cell stack system |
| US6372356B1 (en) | 1998-06-04 | 2002-04-16 | Xerox Corporation | Compliant substrates for growing lattice mismatched films |
| DE10200929A1 (de) * | 2002-01-12 | 2003-07-31 | Basf Coatings Ag | Polysiloxan-Sole, Verfahren zu ihrer Herstellung und ihre Verwendung |
| US20070082128A1 (en) * | 2003-03-03 | 2007-04-12 | Dechema Gesellscaft Fur Chemische Technik Und Biotechnologie E.V. | Method for coating a substrate |
| KR100789064B1 (ko) * | 2006-07-14 | 2007-12-26 | 중앙대학교 산학협력단 | 금속유기물증착법에 의한 ＣｕＩｎＳ2 박막의 제조방법,그로 제조된 ＣｕＩｎＳ2 박막 및 그를 이용한 Ｉｎ2Ｓ3박막의 제조방법 |
| TWI485276B (zh) * | 2013-12-05 | 2015-05-21 | Nat Inst Chung Shan Science & Technology | 提升硒化物薄膜成長品質之蒸鍍裝置 |
| EP3173507A1 (de) * | 2015-11-25 | 2017-05-31 | Umicore AG & Co. KG | Verfahren zur metallorganischen gasphasenabscheidung unter verwendung von lösungen von indiumalkylverbindungen in kohlenwasserstoffen |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| JP6947914B2 (ja) | 2017-08-18 | 2021-10-13 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 高圧高温下のアニールチャンバ |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| CN111095524B (zh) | 2017-09-12 | 2023-10-03 | 应用材料公司 | 用于使用保护阻挡物层制造半导体结构的设备和方法 |
| JP7112490B2 (ja) | 2017-11-11 | 2022-08-03 | マイクロマテリアルズ エルエルシー | 高圧処理チャンバのためのガス供給システム |
| JP2021503714A (ja) | 2017-11-17 | 2021-02-12 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 高圧処理システムのためのコンデンサシステム |
| EP3762962A4 (en) | 2018-03-09 | 2021-12-08 | Applied Materials, Inc. | HIGH PRESSURE ANNEALING PROCESS FOR METAL-BASED MATERIALS |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| KR20210077779A (ko) * | 2018-11-16 | 2021-06-25 | 어플라이드 머티어리얼스, 인코포레이티드 | 강화된 확산 프로세스를 사용한 막 증착 |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
| US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU570239A1 (ru) * | 1976-02-12 | 1979-02-10 | Институт химии АН СССР | "Способ получени кристаллических соединений а1у ву14 |
| JPS59123226A (ja) * | 1982-12-28 | 1984-07-17 | Fujitsu Ltd | 半導体装置の製造装置 |
-
1992
- 1992-06-23 US US07/903,256 patent/US5300320A/en not_active Expired - Lifetime
-
1993
- 1993-06-18 JP JP50245194A patent/JP3249822B2/ja not_active Expired - Fee Related
- 1993-06-18 EP EP93916588A patent/EP0647353A1/en not_active Withdrawn
- 1993-06-18 AU AU46386/93A patent/AU4638693A/en not_active Abandoned
- 1993-06-18 WO PCT/US1993/005796 patent/WO1994000870A2/en not_active Application Discontinuation
- 1993-06-18 CA CA002138951A patent/CA2138951A1/en not_active Abandoned
- 1993-06-23 TW TW082105018A patent/TW244397B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| US5300320A (en) | 1994-04-05 |
| WO1994000870A3 (en) | 1994-03-03 |
| CA2138951A1 (en) | 1994-01-06 |
| JP3249822B2 (ja) | 2002-01-21 |
| WO1994000870A2 (en) | 1994-01-06 |
| EP0647353A1 (en) | 1995-04-12 |
| JPH08504057A (ja) | 1996-04-30 |
| AU4638693A (en) | 1994-01-24 |
