TW242694B - - Google Patents

Info

Publication number
TW242694B
TW242694B TW080109887A TW80109887A TW242694B TW 242694 B TW242694 B TW 242694B TW 080109887 A TW080109887 A TW 080109887A TW 80109887 A TW80109887 A TW 80109887A TW 242694 B TW242694 B TW 242694B
Authority
TW
Taiwan
Application number
TW080109887A
Original Assignee
Gold Star Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gold Star Co filed Critical Gold Star Co
Application granted granted Critical
Publication of TW242694B publication Critical patent/TW242694B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26533—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically inactive species in silicon to make buried insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76267—Vertical isolation by silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76281—Lateral isolation by selective oxidation of silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
TW080109887A 1991-04-15 1991-12-17 TW242694B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910006019A KR950000103B1 (ko) 1991-04-15 1991-04-15 반도체 장치 및 그 제조방법

Publications (1)

Publication Number Publication Date
TW242694B true TW242694B (zh) 1995-03-11

Family

ID=19313292

Family Applications (1)

Application Number Title Priority Date Filing Date
TW080109887A TW242694B (zh) 1991-04-15 1991-12-17

Country Status (5)

Country Link
US (2) US5182226A (zh)
JP (1) JPH0697678B2 (zh)
KR (1) KR950000103B1 (zh)
DE (1) DE4212503C2 (zh)
TW (1) TW242694B (zh)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0610599A1 (en) * 1993-01-04 1994-08-17 Texas Instruments Incorporated High voltage transistor with drift region
US5312764A (en) * 1993-05-28 1994-05-17 Motorola, Inc. Method of doping a semiconductor substrate
JP3396553B2 (ja) * 1994-02-04 2003-04-14 三菱電機株式会社 半導体装置の製造方法及び半導体装置
US5399507A (en) * 1994-06-27 1995-03-21 Motorola, Inc. Fabrication of mixed thin-film and bulk semiconductor substrate for integrated circuit applications
US5693975A (en) * 1995-10-05 1997-12-02 Integrated Device Technology, Inc. Compact P-channel/N-channel transistor structure
US5712186A (en) * 1996-06-12 1998-01-27 Micron Technology, Inc. Method for growing field oxide to minimize birds' beak length
US5882993A (en) 1996-08-19 1999-03-16 Advanced Micro Devices, Inc. Integrated circuit with differing gate oxide thickness and process for making same
US6033943A (en) * 1996-08-23 2000-03-07 Advanced Micro Devices, Inc. Dual gate oxide thickness integrated circuit and process for making same
US5976952A (en) * 1997-03-05 1999-11-02 Advanced Micro Devices, Inc. Implanted isolation structure formation for high density CMOS integrated circuits
US5963839A (en) * 1997-12-08 1999-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of polysilicon contact resistance by nitrogen implantation
US6258693B1 (en) * 1997-12-23 2001-07-10 Integrated Device Technology, Inc. Ion implantation for scalability of isolation in an integrated circuit
US5962914A (en) * 1998-01-14 1999-10-05 Advanced Micro Devices, Inc. Reduced bird's beak field oxidation process using nitrogen implanted into active region
US6040607A (en) 1998-02-23 2000-03-21 Advanced Micro Devices, Inc. Self aligned method for differential oxidation rate at shallow trench isolation edge
US6531364B1 (en) 1998-08-05 2003-03-11 Advanced Micro Devices, Inc. Advanced fabrication technique to form ultra thin gate dielectric using a sacrificial polysilicon seed layer
US6753229B1 (en) 1998-12-04 2004-06-22 The Regents Of The University Of California Multiple-thickness gate oxide formed by oxygen implantation
US6888750B2 (en) * 2000-04-28 2005-05-03 Matrix Semiconductor, Inc. Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
US6853048B1 (en) 2000-08-11 2005-02-08 Agere Systems Inc. Bipolar transistor having an isolation structure located under the base, emitter and collector and a method of manufacture thereof
US6580124B1 (en) 2000-08-14 2003-06-17 Matrix Semiconductor Inc. Multigate semiconductor device with vertical channel current and method of fabrication
EP1312120A1 (en) 2000-08-14 2003-05-21 Matrix Semiconductor, Inc. Dense arrays and charge storage devices, and methods for making same
EP1230677A1 (en) * 2000-08-21 2002-08-14 Koninklijke Philips Electronics N.V. Process for forming shallow isolating regions in an integrated circuit and an integrated circuit thus formed
US6897514B2 (en) * 2001-03-28 2005-05-24 Matrix Semiconductor, Inc. Two mask floating gate EEPROM and method of making
US6541356B2 (en) * 2001-05-21 2003-04-01 International Business Machines Corporation Ultimate SIMOX
US6864547B2 (en) 2001-06-15 2005-03-08 Agere Systems Inc. Semiconductor device having a ghost source/drain region and a method of manufacture therefor
US6958518B2 (en) * 2001-06-15 2005-10-25 Agere Systems Inc. Semiconductor device having at least one source/drain region formed on an isolation region and a method of manufacture therefor
TW495859B (en) * 2001-07-23 2002-07-21 Mosel Vitelic Inc Method for preventing gate oxide thinning
US6593624B2 (en) 2001-09-25 2003-07-15 Matrix Semiconductor, Inc. Thin film transistors with vertically offset drain regions
US6841813B2 (en) * 2001-08-13 2005-01-11 Matrix Semiconductor, Inc. TFT mask ROM and method for making same
US6853049B2 (en) 2002-03-13 2005-02-08 Matrix Semiconductor, Inc. Silicide-silicon oxide-semiconductor antifuse device and method of making
US6737675B2 (en) 2002-06-27 2004-05-18 Matrix Semiconductor, Inc. High density 3D rail stack arrays
US6809386B2 (en) * 2002-08-29 2004-10-26 Micron Technology, Inc. Cascode I/O driver with improved ESD operation
KR100525925B1 (ko) * 2003-07-12 2005-11-02 매그나칩 반도체 유한회사 반도체 소자의 트렌치 형성방법
US7259053B2 (en) * 2003-09-22 2007-08-21 Dongbu Electronics Co., Ltd. Methods for forming a device isolation structure in a semiconductor device
US7692483B2 (en) * 2007-10-10 2010-04-06 Atmel Corporation Apparatus and method for preventing snap back in integrated circuits
US8085604B2 (en) * 2008-12-12 2011-12-27 Atmel Corporation Snap-back tolerant integrated circuits
US9627395B2 (en) 2015-02-11 2017-04-18 Sandisk Technologies Llc Enhanced channel mobility three-dimensional memory structure and method of making thereof
CN106033743B (zh) * 2015-03-17 2019-04-02 北大方正集团有限公司 BiCMOS集成电路制作方法
US9478495B1 (en) 2015-10-26 2016-10-25 Sandisk Technologies Llc Three dimensional memory device containing aluminum source contact via structure and method of making thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56115547A (en) * 1980-02-18 1981-09-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS5743438A (en) * 1980-08-29 1982-03-11 Toshiba Corp Semiconductor device and manufacture thereof
JPS5938738A (ja) * 1982-08-30 1984-03-02 Konishiroku Photo Ind Co Ltd 陰画像形成方法
US4615746A (en) * 1983-09-29 1986-10-07 Kenji Kawakita Method of forming isolated island regions in a semiconductor substrate by selective etching and oxidation and devices formed therefrom
FR2616590B1 (fr) * 1987-06-15 1990-03-02 Commissariat Energie Atomique Procede de fabrication d'une couche d'isolant enterree dans un substrat semi-conducteur par implantation ionique et structure semi-conductrice comportant cette couche
JPS6479431A (en) * 1987-09-18 1989-03-24 Meisan Kk Disk brake
JPH0666385B2 (ja) * 1988-01-06 1994-08-24 株式会社東芝 半導体装置の製造方法
JPH01205552A (ja) * 1988-02-12 1989-08-17 Seiko Epson Corp 半導体装置の製造方法
JPH025552A (ja) * 1988-06-24 1990-01-10 Matsushita Electron Corp 半導体装置
JPH0240230A (ja) * 1988-07-27 1990-02-09 Satake Eng Co Ltd 穀物混合装置

Also Published As

Publication number Publication date
DE4212503C2 (de) 1994-09-22
US5182226A (en) 1993-01-26
US5391907A (en) 1995-02-21
DE4212503A1 (de) 1992-10-22
KR950000103B1 (ko) 1995-01-09
JPH0590401A (ja) 1993-04-09
JPH0697678B2 (ja) 1994-11-30
KR920020596A (ko) 1992-11-21

Similar Documents

Publication Publication Date Title
EP0497252A3 (zh)
DE4290659T1 (zh)
FR2678183B1 (zh)
TW226419B (zh)
FR2673455B1 (zh)
FR2674912B1 (zh)
EP0513792A3 (zh)
DE4290056T1 (zh)
DE4290097T1 (zh)
FR2682887B1 (zh)
FR2679260B1 (zh)
FR2676559B1 (zh)
DE4291072T1 (zh)
FR2685516B1 (zh)
ECSDI910044S (zh)
GB9125758D0 (zh)
IN172678B (zh)
IN172860B (zh)
EP0532241A3 (zh)
EP0547830A3 (zh)
EP0520829A3 (zh)
EP0522134A4 (zh)
EP0523656A3 (zh)
EP0524011A3 (zh)
EP0516309A3 (zh)

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees