TW241381B - - Google Patents

Info

Publication number
TW241381B
TW241381B TW083104241A TW83104241A TW241381B TW 241381 B TW241381 B TW 241381B TW 083104241 A TW083104241 A TW 083104241A TW 83104241 A TW83104241 A TW 83104241A TW 241381 B TW241381 B TW 241381B
Authority
TW
Taiwan
Application number
TW083104241A
Original Assignee
Zaidanhozin Handotai Kenkyu Shinkokai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zaidanhozin Handotai Kenkyu Shinkokai filed Critical Zaidanhozin Handotai Kenkyu Shinkokai
Application granted granted Critical
Publication of TW241381B publication Critical patent/TW241381B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66356—Gated diodes, e.g. field controlled diodes [FCD], static induction thyristors [SITh], field controlled thyristors [FCTh]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8616—Charge trapping diodes
TW083104241A 1993-05-12 1994-05-11 TW241381B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14712893 1993-05-12

Publications (1)

Publication Number Publication Date
TW241381B true TW241381B (zh) 1995-02-21

Family

ID=15423194

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083104241A TW241381B (zh) 1993-05-12 1994-05-11

Country Status (5)

Country Link
US (1) US5485017A (zh)
EP (1) EP0631326B1 (zh)
KR (1) KR0157662B1 (zh)
DE (1) DE69416619T2 (zh)
TW (1) TW241381B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0744777B1 (en) * 1995-05-25 2000-08-30 Matsushita Electric Industrial Co., Ltd. Nonlinear element and bistable memory device
JP3397516B2 (ja) * 1995-06-08 2003-04-14 三菱電機株式会社 半導体記憶装置及び半導体集積回路装置
EP0843360A1 (en) * 1996-11-15 1998-05-20 Hitachi Europe Limited Memory device
JP3853905B2 (ja) * 1997-03-18 2006-12-06 株式会社東芝 量子効果装置とｂｌトンネル素子を用いた装置
US6421682B1 (en) 1999-07-26 2002-07-16 Microsoft Corporation Catalog management system architecture having data table objects and logic table objects
EP2346071B1 (en) * 2008-10-29 2017-04-05 Fujitsu Limited Compound semiconductor device and method for manufacturing the same
US10103226B2 (en) * 2012-04-30 2018-10-16 International Business Machines Corporation Method of fabricating tunnel transistors with abrupt junctions
US9508854B2 (en) 2013-12-06 2016-11-29 Ecole Polytechnique Federale De Lausanne (Epfl) Single field effect transistor capacitor-less memory device and method of operating the same
DE102016015475B3 (de) * 2016-12-28 2018-01-11 3-5 Power Electronics GmbH IGBT Halbleiterstruktur
KR20180129457A (ko) * 2017-05-26 2018-12-05 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3972059A (en) * 1973-12-28 1976-07-27 International Business Machines Corporation Dielectric diode, fabrication thereof, and charge store memory therewith
JPS5591166A (en) * 1978-12-28 1980-07-10 Nippon Gakki Seizo Kk Semiconductor memory
JPS56124273A (en) * 1980-03-04 1981-09-29 Semiconductor Res Found Semiconductor device
JPS5940576A (ja) * 1982-08-30 1984-03-06 Junichi Nishizawa フオトサイリスタ
JPS60254777A (ja) * 1984-05-31 1985-12-16 Fujitsu Ltd 半導体装置
JPS61158184A (ja) * 1984-12-29 1986-07-17 Fujitsu Ltd 半導体装置
US5216262A (en) * 1992-03-02 1993-06-01 Raphael Tsu Quantum well structures useful for semiconductor devices

Also Published As

Publication number Publication date
EP0631326A3 (en) 1995-05-31
DE69416619D1 (de) 1999-04-01
US5485017A (en) 1996-01-16
KR0157662B1 (ko) 1998-10-15
EP0631326A2 (en) 1994-12-28
DE69416619T2 (de) 1999-09-30
EP0631326B1 (en) 1999-02-24
KR940027148A (ko) 1994-12-10

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