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Application filed by Winbond Electronics CorpfiledCriticalWinbond Electronics Corp
Priority to TW83104509ApriorityCriticalpatent/TW234772B/en
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Publication of TW234772BpublicationCriticalpatent/TW234772B/en
Insulated Gate Type Field-Effect Transistor
(AREA)
Abstract
A process for MOSFET with no spaceless and lithtly doped drain structureinclues the following steps: 1. taking one medium product with gate after pre-processing; 2. implanting doped ion with light density into the proper area on themedium product; 3. oxidizing the medium product after doping to growing one oxide on thegate surface; 4. implanting ion with thick density into the doped medium product, thenforming source/drain junction and lightly doped drain.
TW83104509A1994-05-181994-05-18Process for MOSFET
TW234772B
(en)
Uprom memory cell having a structure compatible with the manufacture of table cloth matrices of eprom memory cells with self-aligned lines of source and drain, and process for its manufacture