TW232085B - Neuron type MOSFET - Google Patents

Neuron type MOSFET

Info

Publication number
TW232085B
TW232085B TW82101028A TW82101028A TW232085B TW 232085 B TW232085 B TW 232085B TW 82101028 A TW82101028 A TW 82101028A TW 82101028 A TW82101028 A TW 82101028A TW 232085 B TW232085 B TW 232085B
Authority
TW
Taiwan
Prior art keywords
area
conducting
substrate
drain
type
Prior art date
Application number
TW82101028A
Other languages
English (en)
Inventor
Guann-Chyun Chang
Original Assignee
Ind Tech Res Inst
Chi Mei Optoelectronics Corp
Toppoly Optoelectronics Corp
Prime View Int Corp Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst, Chi Mei Optoelectronics Corp, Toppoly Optoelectronics Corp, Prime View Int Corp Ltd filed Critical Ind Tech Res Inst
Priority to TW82101028A priority Critical patent/TW232085B/zh
Application granted granted Critical
Publication of TW232085B publication Critical patent/TW232085B/zh

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW82101028A 1993-02-11 1993-02-11 Neuron type MOSFET TW232085B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW82101028A TW232085B (en) 1993-02-11 1993-02-11 Neuron type MOSFET

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW82101028A TW232085B (en) 1993-02-11 1993-02-11 Neuron type MOSFET

Publications (1)

Publication Number Publication Date
TW232085B true TW232085B (en) 1994-10-11

Family

ID=51348675

Family Applications (1)

Application Number Title Priority Date Filing Date
TW82101028A TW232085B (en) 1993-02-11 1993-02-11 Neuron type MOSFET

Country Status (1)

Country Link
TW (1) TW232085B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI641149B (zh) * 2016-12-28 2018-11-11 上海新昇半導體科技有限公司 一種神經元電晶體結構及其製備方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI641149B (zh) * 2016-12-28 2018-11-11 上海新昇半導體科技有限公司 一種神經元電晶體結構及其製備方法

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees