TW226487B - - Google Patents

Info

Publication number
TW226487B
TW226487B TW081110142A TW81110142A TW226487B TW 226487 B TW226487 B TW 226487B TW 081110142 A TW081110142 A TW 081110142A TW 81110142 A TW81110142 A TW 81110142A TW 226487 B TW226487 B TW 226487B
Authority
TW
Taiwan
Prior art keywords
nvram
region
storage device
charge storage
cell
Prior art date
Application number
TW081110142A
Other languages
English (en)
Original Assignee
Purdue Research Foundation
Cree Research Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Purdue Research Foundation, Cree Research Inc filed Critical Purdue Research Foundation
Application granted granted Critical
Publication of TW226487B publication Critical patent/TW226487B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/10—DRAM devices comprising bipolar components
TW081110142A 1991-11-26 1992-12-17 TW226487B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/798,219 US5465249A (en) 1991-11-26 1991-11-26 Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate

Publications (1)

Publication Number Publication Date
TW226487B true TW226487B (zh) 1994-07-11

Family

ID=25172832

Family Applications (1)

Application Number Title Priority Date Filing Date
TW081110142A TW226487B (zh) 1991-11-26 1992-12-17

Country Status (10)

Country Link
US (1) US5465249A (zh)
EP (1) EP0614567B1 (zh)
JP (1) JP3473953B2 (zh)
KR (1) KR100304248B1 (zh)
AT (1) ATE148581T1 (zh)
AU (1) AU3226693A (zh)
CA (1) CA2124355C (zh)
DE (1) DE69217249T2 (zh)
TW (1) TW226487B (zh)
WO (1) WO1993011540A1 (zh)

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US5926740A (en) * 1997-10-27 1999-07-20 Micron Technology, Inc. Graded anti-reflective coating for IC lithography
US5886368A (en) 1997-07-29 1999-03-23 Micron Technology, Inc. Transistor with silicon oxycarbide gate and methods of fabrication and use
US6031263A (en) * 1997-07-29 2000-02-29 Micron Technology, Inc. DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate
US7196929B1 (en) 1997-07-29 2007-03-27 Micron Technology Inc Method for operating a memory device having an amorphous silicon carbide gate insulator
US6936849B1 (en) 1997-07-29 2005-08-30 Micron Technology, Inc. Silicon carbide gate transistor
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US6143655A (en) 1998-02-25 2000-11-07 Micron Technology, Inc. Methods and structures for silver interconnections in integrated circuits
US6492694B2 (en) 1998-02-27 2002-12-10 Micron Technology, Inc. Highly conductive composite polysilicon gate for CMOS integrated circuits
DE19925233A1 (de) * 1998-06-08 1999-12-09 Siemens Ag Halbleiteranordnung mit ohmscher Kontaktierung und Verfahren zur Kontaktierung einer Halbleiteranordnung
DE19839969C2 (de) * 1998-09-02 2003-02-27 Infineon Technologies Ag Siliziumcarbid-Junction-Feldeffekttransistor
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
DE60043536D1 (de) 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
CN1652995A (zh) * 2002-03-08 2005-08-10 康乃尔研究基金会有限公司 带电子电路的碳化硅微机电器件
JP3960837B2 (ja) * 2002-03-22 2007-08-15 三菱電機株式会社 半導体装置およびその製法
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AU2003258376B2 (en) * 2002-09-12 2006-09-14 Qs Semiconductor Australia Pty Ltd Memory cell
AU2006203335B2 (en) * 2002-09-12 2008-01-10 Qs Semiconductor Australia Pty Ltd Non Volatile Memory Cell
TWI320571B (en) 2002-09-12 2010-02-11 Qs Semiconductor Australia Pty Ltd Dynamic nonvolatile random access memory ne transistor cell and random access memory array
WO2004079355A1 (de) * 2003-03-07 2004-09-16 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V: Ionensensitiver feldeffekttransistor und verfahren zum herstellen eines ionensensitiven feldeffekttransistors
US20050269621A1 (en) * 2004-06-03 2005-12-08 Micron Technology, Inc. Flash memory devices on silicon carbide
US7259415B1 (en) 2004-09-02 2007-08-21 Micron Technology, Inc. Long retention time single transistor vertical memory gain cell
US7271052B1 (en) 2004-09-02 2007-09-18 Micron Technology, Inc. Long retention time single transistor vertical memory gain cell
US7538389B2 (en) 2005-06-08 2009-05-26 Micron Technology, Inc. Capacitorless DRAM on bulk silicon
US7404028B2 (en) * 2005-06-30 2008-07-22 Gm Global Technology Operations, Inc. ECU identification retention across reprogramming events
FR2893763A1 (fr) * 2005-11-21 2007-05-25 St Microelectronics Sa Element de memoire non-volatile
US8547756B2 (en) 2010-10-04 2013-10-01 Zeno Semiconductor, Inc. Semiconductor memory device having an electrically floating body transistor
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
US8189364B2 (en) 2008-12-17 2012-05-29 Qs Semiconductor Australia Pty Ltd. Charge retention structures and techniques for implementing charge controlled resistors in memory cells and arrays of memory
US11908899B2 (en) 2009-02-20 2024-02-20 Zeno Semiconductor, Inc. MOSFET and memory cell having improved drain current through back bias application
US20100238743A1 (en) * 2009-03-23 2010-09-23 James Pan FAST EMBEDDED BiCMOS-THYRISTOR LATCH-UP NONVOLATILE MEMORY
US20110042685A1 (en) * 2009-08-18 2011-02-24 Qs Semiconductor Australia Pty Ltd Substrates and methods of fabricating epitaxial silicon carbide structures with sequential emphasis
US8507966B2 (en) 2010-03-02 2013-08-13 Micron Technology, Inc. Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same
US9646869B2 (en) 2010-03-02 2017-05-09 Micron Technology, Inc. Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices
US9608119B2 (en) 2010-03-02 2017-03-28 Micron Technology, Inc. Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
US8513722B2 (en) 2010-03-02 2013-08-20 Micron Technology, Inc. Floating body cell structures, devices including same, and methods for forming same
US8288795B2 (en) 2010-03-02 2012-10-16 Micron Technology, Inc. Thyristor based memory cells, devices and systems including the same and methods for forming the same
US10340276B2 (en) 2010-03-02 2019-07-02 Zeno Semiconductor, Inc. Method of maintaining the state of semiconductor memory having electrically floating body transistor
US8228730B2 (en) 2010-08-31 2012-07-24 Micron Technology, Inc. Memory cell structures and methods
US8598621B2 (en) 2011-02-11 2013-12-03 Micron Technology, Inc. Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access transistor
US8952418B2 (en) 2011-03-01 2015-02-10 Micron Technology, Inc. Gated bipolar junction transistors
US8519431B2 (en) 2011-03-08 2013-08-27 Micron Technology, Inc. Thyristors
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US8772848B2 (en) 2011-07-26 2014-07-08 Micron Technology, Inc. Circuit structures, memory circuitry, and methods
US9025358B2 (en) * 2011-10-13 2015-05-05 Zeno Semiconductor Inc Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating
JP6046514B2 (ja) * 2012-03-01 2016-12-14 株式会社半導体エネルギー研究所 半導体装置
US9548119B2 (en) 2014-01-15 2017-01-17 Zeno Semiconductor, Inc Memory device comprising an electrically floating body transistor
US9496053B2 (en) 2014-08-15 2016-11-15 Zeno Semiconductor, Inc. Memory device comprising electrically floating body transistor
US9224738B1 (en) 2014-08-18 2015-12-29 Micron Technology, Inc. Methods of forming an array of gated devices
US9673054B2 (en) 2014-08-18 2017-06-06 Micron Technology, Inc. Array of gated devices and methods of forming an array of gated devices
US9209187B1 (en) 2014-08-18 2015-12-08 Micron Technology, Inc. Methods of forming an array of gated devices
KR102529073B1 (ko) 2015-04-29 2023-05-08 제노 세미컨덕터, 인크. 백바이어스를 이용한 드레인 전류가 향상된 트랜지스터 및 메모리 셀
US10553683B2 (en) 2015-04-29 2020-02-04 Zeno Semiconductor, Inc. MOSFET and memory cell having improved drain current through back bias application
US10079301B2 (en) 2016-11-01 2018-09-18 Zeno Semiconductor, Inc. Memory device comprising an electrically floating body transistor and methods of using
WO2019204525A1 (en) 2018-04-18 2019-10-24 Zeno Semiconductor, Inc. A memory device comprising an electrically floating body transistor
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Also Published As

Publication number Publication date
WO1993011540A1 (en) 1993-06-10
AU3226693A (en) 1993-06-28
KR100304248B1 (ko) 2001-11-22
DE69217249D1 (de) 1997-03-13
ATE148581T1 (de) 1997-02-15
EP0614567B1 (en) 1997-01-29
JP3473953B2 (ja) 2003-12-08
JPH07507657A (ja) 1995-08-24
US5465249A (en) 1995-11-07
CA2124355A1 (en) 1993-06-10
DE69217249T2 (de) 1997-09-25
CA2124355C (en) 2005-01-25
EP0614567A1 (en) 1994-09-14

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