TW202511366A - 微影膜形成組成物、微影下層膜及阻劑圖型形成方法 - Google Patents

微影膜形成組成物、微影下層膜及阻劑圖型形成方法 Download PDF

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Publication number
TW202511366A
TW202511366A TW113124365A TW113124365A TW202511366A TW 202511366 A TW202511366 A TW 202511366A TW 113124365 A TW113124365 A TW 113124365A TW 113124365 A TW113124365 A TW 113124365A TW 202511366 A TW202511366 A TW 202511366A
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TW
Taiwan
Prior art keywords
tellurium
forming composition
film
microfilm
branched
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TW113124365A
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English (en)
Chinese (zh)
Inventor
工藤宏人
佐藤�
大松禎
越後雅敏
Original Assignee
學校法人關西大學
日商三菱瓦斯化學股份有限公司
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Application filed by 學校法人關西大學, 日商三菱瓦斯化學股份有限公司 filed Critical 學校法人關西大學
Publication of TW202511366A publication Critical patent/TW202511366A/zh

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G79/00—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule
    • C08G79/14—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule a linkage containing two or more elements other than carbon, oxygen, nitrogen, sulfur and silicon
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW113124365A 2023-06-30 2024-06-28 微影膜形成組成物、微影下層膜及阻劑圖型形成方法 TW202511366A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023108181 2023-06-30
JP2023-108181 2023-06-30

Publications (1)

Publication Number Publication Date
TW202511366A true TW202511366A (zh) 2025-03-16

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ID=93938566

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TW113124365A TW202511366A (zh) 2023-06-30 2024-06-28 微影膜形成組成物、微影下層膜及阻劑圖型形成方法

Country Status (3)

Country Link
JP (1) JPWO2025005020A1 (https=)
TW (1) TW202511366A (https=)
WO (1) WO2025005020A1 (https=)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190003528A (ko) * 2016-04-28 2019-01-09 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 레지스트 하층막 형성용 조성물, 리소그래피용 하층막, 및, 패턴 형성방법
KR20250138820A (ko) * 2019-07-02 2025-09-22 오지 홀딩스 가부시키가이샤 패턴 형성 방법, 레지스트 재료, 및 패턴 형성 장치

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JPWO2025005020A1 (https=) 2025-01-02
WO2025005020A1 (ja) 2025-01-02

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