TW202507717A - 電腦、資訊處理裝置、伺服器及記憶體裝置 - Google Patents

電腦、資訊處理裝置、伺服器及記憶體裝置 Download PDF

Info

Publication number
TW202507717A
TW202507717A TW113126880A TW113126880A TW202507717A TW 202507717 A TW202507717 A TW 202507717A TW 113126880 A TW113126880 A TW 113126880A TW 113126880 A TW113126880 A TW 113126880A TW 202507717 A TW202507717 A TW 202507717A
Authority
TW
Taiwan
Prior art keywords
layer
conductive layer
transistor
insulating layer
oxide semiconductor
Prior art date
Application number
TW113126880A
Other languages
English (en)
Chinese (zh)
Inventor
山崎舜平
八窪裕人
松嵜𨺓徳
村川努
倉田求
澤井寛美
Original Assignee
日商半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商半導體能源研究所股份有限公司 filed Critical 日商半導體能源研究所股份有限公司
Publication of TW202507717A publication Critical patent/TW202507717A/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
TW113126880A 2023-07-28 2024-07-18 電腦、資訊處理裝置、伺服器及記憶體裝置 TW202507717A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2023-123722 2023-07-28
JP2023123717 2023-07-28
JP2023-123717 2023-07-28
JP2023123722 2023-07-28

Publications (1)

Publication Number Publication Date
TW202507717A true TW202507717A (zh) 2025-02-16

Family

ID=94394321

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113126880A TW202507717A (zh) 2023-07-28 2024-07-18 電腦、資訊處理裝置、伺服器及記憶體裝置

Country Status (5)

Country Link
JP (1) JPWO2025027443A1 (https=)
KR (1) KR20260042478A (https=)
CN (1) CN121549069A (https=)
TW (1) TW202507717A (https=)
WO (1) WO2025027443A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016128859A1 (en) * 2015-02-11 2016-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2019047006A (ja) * 2017-09-05 2019-03-22 株式会社半導体エネルギー研究所 半導体装置、電子機器
US12237019B2 (en) * 2019-11-10 2025-02-25 Semiconductor Energy Laboratory Co., Ltd. Memory device, operation method of memory device, data processing device, data processing system, and electronic device
WO2021111250A1 (ja) * 2019-12-06 2021-06-10 株式会社半導体エネルギー研究所 情報処理装置

Also Published As

Publication number Publication date
CN121549069A (zh) 2026-02-17
WO2025027443A1 (ja) 2025-02-06
JPWO2025027443A1 (https=) 2025-02-06
KR20260042478A (ko) 2026-03-31

Similar Documents

Publication Publication Date Title
US12237019B2 (en) Memory device, operation method of memory device, data processing device, data processing system, and electronic device
US12568628B2 (en) Semiconductor device
JP7769824B2 (ja) 演算処理装置の動作方法
KR20240052666A (ko) 반도체 장치
WO2019243957A1 (ja) 記憶装置および電子機器
JP7711280B2 (ja) 情報処理装置の動作方法
US20250133824A1 (en) Semiconductor device
US20250126843A1 (en) Semiconductor device and method for manufacturing the semiconductor device
TW202507717A (zh) 電腦、資訊處理裝置、伺服器及記憶體裝置
US20250267848A1 (en) Semiconductor device
US20250113545A1 (en) Semiconductor device
US20250280528A1 (en) Semiconductor device
US20250185340A1 (en) Semiconductor device
WO2025172809A1 (ja) 半導体装置
WO2024252246A1 (ja) 半導体装置、半導体装置の作製方法
TW202510689A (zh) 半導體裝置及半導體裝置的製造方法
JP2025008716A (ja) 半導体装置、および半導体装置の作製方法
WO2025172810A1 (ja) 半導体装置、記憶装置
KR20250119475A (ko) 반도체 장치, 기억 장치
WO2024042404A1 (ja) 半導体装置
TW202533701A (zh) 半導體裝置
KR20260048534A (ko) 반도체 장치 및 반도체 장치의 제작 방법
CN118749229A (zh) 半导体装置
TW202441602A (zh) 半導體裝置
KR20250064610A (ko) 반도체 장치