CN121549069A - 计算机、信息处理装置、服务器及存储装置 - Google Patents
计算机、信息处理装置、服务器及存储装置Info
- Publication number
- CN121549069A CN121549069A CN202480048173.2A CN202480048173A CN121549069A CN 121549069 A CN121549069 A CN 121549069A CN 202480048173 A CN202480048173 A CN 202480048173A CN 121549069 A CN121549069 A CN 121549069A
- Authority
- CN
- China
- Prior art keywords
- layer
- conductive layer
- transistor
- insulating layer
- oxide semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
Landscapes
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023-123722 | 2023-07-28 | ||
| JP2023123717 | 2023-07-28 | ||
| JP2023-123717 | 2023-07-28 | ||
| JP2023123722 | 2023-07-28 | ||
| PCT/IB2024/057074 WO2025027443A1 (ja) | 2023-07-28 | 2024-07-22 | コンピュータ、情報処理装置、サーバ、及び記憶装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN121549069A true CN121549069A (zh) | 2026-02-17 |
Family
ID=94394321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202480048173.2A Pending CN121549069A (zh) | 2023-07-28 | 2024-07-22 | 计算机、信息处理装置、服务器及存储装置 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2025027443A1 (https=) |
| KR (1) | KR20260042478A (https=) |
| CN (1) | CN121549069A (https=) |
| TW (1) | TW202507717A (https=) |
| WO (1) | WO2025027443A1 (https=) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016128859A1 (en) * | 2015-02-11 | 2016-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2019047006A (ja) * | 2017-09-05 | 2019-03-22 | 株式会社半導体エネルギー研究所 | 半導体装置、電子機器 |
| US12237019B2 (en) * | 2019-11-10 | 2025-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Memory device, operation method of memory device, data processing device, data processing system, and electronic device |
| WO2021111250A1 (ja) * | 2019-12-06 | 2021-06-10 | 株式会社半導体エネルギー研究所 | 情報処理装置 |
-
2024
- 2024-07-18 TW TW113126880A patent/TW202507717A/zh unknown
- 2024-07-22 JP JP2025537294A patent/JPWO2025027443A1/ja active Pending
- 2024-07-22 CN CN202480048173.2A patent/CN121549069A/zh active Pending
- 2024-07-22 KR KR1020267001483A patent/KR20260042478A/ko active Pending
- 2024-07-22 WO PCT/IB2024/057074 patent/WO2025027443A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2025027443A1 (ja) | 2025-02-06 |
| JPWO2025027443A1 (https=) | 2025-02-06 |
| KR20260042478A (ko) | 2026-03-31 |
| TW202507717A (zh) | 2025-02-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication |