TW202440795A - 積層體、積層體之製造方法、元件之製造方法、攝像裝置、攝像裝置之製造方法、半導體裝置及半導體裝置之製造方法 - Google Patents

積層體、積層體之製造方法、元件之製造方法、攝像裝置、攝像裝置之製造方法、半導體裝置及半導體裝置之製造方法 Download PDF

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Publication number
TW202440795A
TW202440795A TW113102545A TW113102545A TW202440795A TW 202440795 A TW202440795 A TW 202440795A TW 113102545 A TW113102545 A TW 113102545A TW 113102545 A TW113102545 A TW 113102545A TW 202440795 A TW202440795 A TW 202440795A
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Taiwan
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layer
manufacturing
organic layer
laminate
inorganic layer
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TW113102545A
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English (en)
Chinese (zh)
Inventor
塩島太郎
國澤主
野元颯
佐藤憲一朗
出口英寛
七里徳重
浅野元彦
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日商積水化學工業股份有限公司
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Publication of TW202440795A publication Critical patent/TW202440795A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/435—Cross-sectional shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/10—Block or graft copolymers containing polysiloxane sequences
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4473—Conductive organic materials, e.g. conductive adhesives or conductive inks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42—Block-or graft-polymers containing polysiloxane sequences
    • C08G77/44—Block-or graft-polymers containing polysiloxane sequences containing only polysiloxane sequences

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Laminated Bodies (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
TW113102545A 2023-01-23 2024-01-23 積層體、積層體之製造方法、元件之製造方法、攝像裝置、攝像裝置之製造方法、半導體裝置及半導體裝置之製造方法 TW202440795A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023-008163 2023-01-23
JP2023008163 2023-01-23

Publications (1)

Publication Number Publication Date
TW202440795A true TW202440795A (zh) 2024-10-16

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TW113102545A TW202440795A (zh) 2023-01-23 2024-01-23 積層體、積層體之製造方法、元件之製造方法、攝像裝置、攝像裝置之製造方法、半導體裝置及半導體裝置之製造方法

Country Status (6)

Country Link
EP (1) EP4656377A1 (https=)
JP (1) JPWO2024157914A1 (https=)
KR (1) KR20250141127A (https=)
CN (1) CN120225353A (https=)
TW (1) TW202440795A (https=)
WO (1) WO2024157914A1 (https=)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06260397A (ja) * 1993-03-08 1994-09-16 Toppan Printing Co Ltd Ｘ線露光用マスクとその製造方法
JP3867393B2 (ja) * 1998-03-20 2007-01-10 株式会社デンソー マイクロヒータおよびその製造方法ならびにエアフローセンサ
JP2005149751A (ja) * 2003-11-11 2005-06-09 Olympus Corp 発熱素子
KR100610481B1 (ko) 2004-12-30 2006-08-08 매그나칩 반도체 유한회사 수광영역을 넓힌 이미지센서 및 그 제조 방법
JP2007125626A (ja) * 2005-11-01 2007-05-24 Toshiba Corp Ｍｅｍｓ素子
WO2009041528A1 (ja) * 2007-09-26 2009-04-02 Citizen Holdings Co., Ltd. 時計用カバーガラス
JP2009152485A (ja) * 2007-12-21 2009-07-09 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
JP2019196936A (ja) * 2018-05-08 2019-11-14 日立オートモティブシステムズ株式会社 熱式センサ装置
DE102019204503B3 (de) * 2018-10-09 2020-03-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Integrierter Kondensator und Verfahren zur Herstellung eines integrierten Kondensators
WO2021261403A1 (ja) * 2020-06-22 2021-12-30 積水化学工業株式会社 積層体、硬化性樹脂組成物、積層体の製造方法、接合電極を有する基板の製造方法、半導体装置及び撮像装置

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Publication number Publication date
WO2024157914A1 (ja) 2024-08-02
CN120225353A (zh) 2025-06-27
JPWO2024157914A1 (https=) 2024-08-02
KR20250141127A (ko) 2025-09-26
EP4656377A1 (en) 2025-12-03

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