CN120225353A - 层叠体、层叠体的制造方法、元件的制造方法、拍摄装置、拍摄装置的制造方法、半导体装置和半导体装置的制造方法 - Google Patents

层叠体、层叠体的制造方法、元件的制造方法、拍摄装置、拍摄装置的制造方法、半导体装置和半导体装置的制造方法 Download PDF

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Publication number
CN120225353A
CN120225353A CN202480005219.2A CN202480005219A CN120225353A CN 120225353 A CN120225353 A CN 120225353A CN 202480005219 A CN202480005219 A CN 202480005219A CN 120225353 A CN120225353 A CN 120225353A
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CN
China
Prior art keywords
organic layer
layer
laminate
inorganic layer
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480005219.2A
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English (en)
Chinese (zh)
Inventor
盐岛太郎
国泽主
野元飒
佐藤宪一朗
出口英宽
七里德重
浅野元彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sekisui Chemical Co Ltd
Original Assignee
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Publication of CN120225353A publication Critical patent/CN120225353A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/435—Cross-sectional shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/10—Block or graft copolymers containing polysiloxane sequences
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4473—Conductive organic materials, e.g. conductive adhesives or conductive inks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42—Block-or graft-polymers containing polysiloxane sequences
    • C08G77/44—Block-or graft-polymers containing polysiloxane sequences containing only polysiloxane sequences

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Laminated Bodies (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
CN202480005219.2A 2023-01-23 2024-01-22 层叠体、层叠体的制造方法、元件的制造方法、拍摄装置、拍摄装置的制造方法、半导体装置和半导体装置的制造方法 Pending CN120225353A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023-008163 2023-01-23
JP2023008163 2023-01-23
PCT/JP2024/001591 WO2024157914A1 (ja) 2023-01-23 2024-01-22 積層体、積層体の製造方法、素子の製造方法、撮像装置、撮像装置の製造方法、半導体装置及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
CN120225353A true CN120225353A (zh) 2025-06-27

Family

ID=91970667

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480005219.2A Pending CN120225353A (zh) 2023-01-23 2024-01-22 层叠体、层叠体的制造方法、元件的制造方法、拍摄装置、拍摄装置的制造方法、半导体装置和半导体装置的制造方法

Country Status (6)

Country Link
EP (1) EP4656377A1 (https=)
JP (1) JPWO2024157914A1 (https=)
KR (1) KR20250141127A (https=)
CN (1) CN120225353A (https=)
TW (1) TW202440795A (https=)
WO (1) WO2024157914A1 (https=)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06260397A (ja) * 1993-03-08 1994-09-16 Toppan Printing Co Ltd Ｘ線露光用マスクとその製造方法
JP3867393B2 (ja) * 1998-03-20 2007-01-10 株式会社デンソー マイクロヒータおよびその製造方法ならびにエアフローセンサ
JP2005149751A (ja) * 2003-11-11 2005-06-09 Olympus Corp 発熱素子
KR100610481B1 (ko) 2004-12-30 2006-08-08 매그나칩 반도체 유한회사 수광영역을 넓힌 이미지센서 및 그 제조 방법
JP2007125626A (ja) * 2005-11-01 2007-05-24 Toshiba Corp Ｍｅｍｓ素子
WO2009041528A1 (ja) * 2007-09-26 2009-04-02 Citizen Holdings Co., Ltd. 時計用カバーガラス
JP2009152485A (ja) * 2007-12-21 2009-07-09 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
JP2019196936A (ja) * 2018-05-08 2019-11-14 日立オートモティブシステムズ株式会社 熱式センサ装置
DE102019204503B3 (de) * 2018-10-09 2020-03-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Integrierter Kondensator und Verfahren zur Herstellung eines integrierten Kondensators
WO2021261403A1 (ja) * 2020-06-22 2021-12-30 積水化学工業株式会社 積層体、硬化性樹脂組成物、積層体の製造方法、接合電極を有する基板の製造方法、半導体装置及び撮像装置

Also Published As

Publication number Publication date
WO2024157914A1 (ja) 2024-08-02
JPWO2024157914A1 (https=) 2024-08-02
KR20250141127A (ko) 2025-09-26
EP4656377A1 (en) 2025-12-03
TW202440795A (zh) 2024-10-16

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