TW202436390A - 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法 - Google Patents

感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法 Download PDF

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Publication number
TW202436390A
TW202436390A TW113100183A TW113100183A TW202436390A TW 202436390 A TW202436390 A TW 202436390A TW 113100183 A TW113100183 A TW 113100183A TW 113100183 A TW113100183 A TW 113100183A TW 202436390 A TW202436390 A TW 202436390A
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TW
Taiwan
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group
formula
radiation
represented
sensitive
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TW113100183A
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English (en)
Chinese (zh)
Inventor
石地洋平
戸次洋佑
楜澤佑真
後藤研由
川端健志
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日商富士軟片股份有限公司
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Publication of TW202436390A publication Critical patent/TW202436390A/zh

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW113100183A 2023-01-06 2024-01-03 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法 TW202436390A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023-001264 2023-01-06
JP2023001264 2023-01-06

Publications (1)

Publication Number Publication Date
TW202436390A true TW202436390A (zh) 2024-09-16

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TW113100183A TW202436390A (zh) 2023-01-06 2024-01-03 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法

Country Status (3)

Country Link
JP (1) JPWO2024147289A1 (https=)
TW (1) TW202436390A (https=)
WO (1) WO2024147289A1 (https=)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61126547A (ja) * 1984-11-26 1986-06-14 Fujitsu Ltd 電子線レジスト材料
JP2002006497A (ja) * 2000-06-27 2002-01-09 Toray Ind Inc ポジ型感放射線性組成物およびこれを用いたレジストパターンの製造方法
JP2002351080A (ja) * 2001-05-28 2002-12-04 Toray Ind Inc ポジ型感放射線性組成物
JP4083399B2 (ja) * 2001-07-24 2008-04-30 セントラル硝子株式会社 含フッ素重合性単量体およびそれを用いた高分子化合物
JP4618075B2 (ja) * 2004-09-29 2011-01-26 日立化成デュポンマイクロシステムズ株式会社 ネガ型感光性樹脂組成物及びパターン形成方法
JP5040839B2 (ja) * 2008-07-18 2012-10-03 Ｊｓｒ株式会社 レジスト下層膜形成組成物
US8865389B2 (en) * 2010-09-28 2014-10-21 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern
WO2019187803A1 (ja) * 2018-03-30 2019-10-03 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
JP7215005B2 (ja) * 2018-07-23 2023-01-31 日本ゼオン株式会社 重合体及びその製造方法、ポジ型レジスト組成物、並びにレジストパターン形成方法
KR20220123427A (ko) * 2020-01-31 2022-09-06 후지필름 가부시키가이샤 포지티브형 레지스트 조성물, 레지스트막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법

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WO2024147289A1 (ja) 2024-07-11
JPWO2024147289A1 (https=) 2024-07-11

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