JPWO2024147289A1 - - Google Patents
Info
- Publication number
- JPWO2024147289A1 JPWO2024147289A1 JP2024568896A JP2024568896A JPWO2024147289A1 JP WO2024147289 A1 JPWO2024147289 A1 JP WO2024147289A1 JP 2024568896 A JP2024568896 A JP 2024568896A JP 2024568896 A JP2024568896 A JP 2024568896A JP WO2024147289 A1 JPWO2024147289 A1 JP WO2024147289A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023001264 | 2023-01-06 | ||
| PCT/JP2023/045815 WO2024147289A1 (ja) | 2023-01-06 | 2023-12-20 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024147289A1 true JPWO2024147289A1 (https=) | 2024-07-11 |
Family
ID=91803836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024568896A Pending JPWO2024147289A1 (https=) | 2023-01-06 | 2023-12-20 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2024147289A1 (https=) |
| TW (1) | TW202436390A (https=) |
| WO (1) | WO2024147289A1 (https=) |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61126547A (ja) * | 1984-11-26 | 1986-06-14 | Fujitsu Ltd | 電子線レジスト材料 |
| JP2002006497A (ja) * | 2000-06-27 | 2002-01-09 | Toray Ind Inc | ポジ型感放射線性組成物およびこれを用いたレジストパターンの製造方法 |
| JP2002351080A (ja) * | 2001-05-28 | 2002-12-04 | Toray Ind Inc | ポジ型感放射線性組成物 |
| JP4083399B2 (ja) * | 2001-07-24 | 2008-04-30 | セントラル硝子株式会社 | 含フッ素重合性単量体およびそれを用いた高分子化合物 |
| JP4618075B2 (ja) * | 2004-09-29 | 2011-01-26 | 日立化成デュポンマイクロシステムズ株式会社 | ネガ型感光性樹脂組成物及びパターン形成方法 |
| JP5040839B2 (ja) * | 2008-07-18 | 2012-10-03 | Ｊｓｒ株式会社 | レジスト下層膜形成組成物 |
| US8865389B2 (en) * | 2010-09-28 | 2014-10-21 | Fujifilm Corporation | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern |
| WO2019187803A1 (ja) * | 2018-03-30 | 2019-10-03 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| JP7215005B2 (ja) * | 2018-07-23 | 2023-01-31 | 日本ゼオン株式会社 | 重合体及びその製造方法、ポジ型レジスト組成物、並びにレジストパターン形成方法 |
| KR20220123427A (ko) * | 2020-01-31 | 2022-09-06 | 후지필름 가부시키가이샤 | 포지티브형 레지스트 조성물, 레지스트막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법 |
-
2023
- 2023-12-20 WO PCT/JP2023/045815 patent/WO2024147289A1/ja not_active Ceased
- 2023-12-20 JP JP2024568896A patent/JPWO2024147289A1/ja active Pending
-
2024
- 2024-01-03 TW TW113100183A patent/TW202436390A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024147289A1 (ja) | 2024-07-11 |
| TW202436390A (zh) | 2024-09-16 |