TW202402154A - Electromagnetic shielding film - Google Patents

Electromagnetic shielding film Download PDF

Info

Publication number
TW202402154A
TW202402154A TW112112320A TW112112320A TW202402154A TW 202402154 A TW202402154 A TW 202402154A TW 112112320 A TW112112320 A TW 112112320A TW 112112320 A TW112112320 A TW 112112320A TW 202402154 A TW202402154 A TW 202402154A
Authority
TW
Taiwan
Prior art keywords
main surface
layer
electromagnetic wave
shielding film
protective layer
Prior art date
Application number
TW112112320A
Other languages
Chinese (zh)
Inventor
野野口航太
梅村滋和
磯部修
Original Assignee
日商拓自達電線股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商拓自達電線股份有限公司 filed Critical 日商拓自達電線股份有限公司
Publication of TW202402154A publication Critical patent/TW202402154A/en

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02Physical, chemical or physicochemical properties
    • B32B7/025Electric or magnetic properties
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Laminated Bodies (AREA)

Abstract

Provided is an electromagnetic shielding film having both sufficiently high concealment characteristics and anti-scratch characteristics for a surface of a protective layer. This electromagnetic shielding film comprises a protective layer having a first main surface and a second main surface opposing the first main surface, and a shield layer disposed on the second main surface of the protective layer, the electromagnetic shielding film being characterized in that the developed surface area ratio Sdr of the interface of the first main surface is 75.0-250%.

Description

電磁波屏蔽膜Electromagnetic wave shielding film

本發明有關於電磁波屏蔽膜。The present invention relates to an electromagnetic wave shielding film.

迄今以來,一直採行對例如撓性印刷配線板(FPC)等印刷配線板貼附電磁波屏蔽膜以屏蔽來自外部之電磁波。 作為用以對印刷配線板施加屏蔽的方法,已知有將具有保護層與屏蔽層之電磁波屏蔽膜加熱加壓使其貼附於印刷配線板而做成屏蔽印刷配線板的方法。 又,在電磁波屏蔽膜之保護層表面配置有以聚對苯二甲酸乙二酯(PET)樹脂等形成之基材膜,以保護保護層免於受傷或受異物傷害。 將電磁波屏蔽膜貼附於印刷配線板後,會將基材膜剝離。 剝離基材膜後,若赤手接觸電磁波屏蔽膜,會造成指紋、污漬附著於電磁波屏蔽膜之保護層等情形,而有外觀變差的問題。 Conventionally, electromagnetic wave shielding films have been attached to printed wiring boards such as flexible printed wiring boards (FPCs) to shield electromagnetic waves from the outside. As a method for shielding a printed wiring board, a method is known in which an electromagnetic wave shielding film having a protective layer and a shielding layer is heated and pressed to adhere to the printed wiring board to form a shielded printed wiring board. In addition, a base film made of polyethylene terephthalate (PET) resin or the like is disposed on the surface of the protective layer of the electromagnetic wave shielding film to protect the protective layer from damage or damage by foreign matter. After the electromagnetic wave shielding film is attached to the printed wiring board, the base film is peeled off. After peeling off the base film, if you touch the electromagnetic wave shielding film with bare hands, fingerprints and stains will adhere to the protective layer of the electromagnetic wave shielding film, resulting in a deterioration in appearance.

專利文獻1及專利文獻2中為了解決如此問題,是利用在電磁波屏蔽膜之保護層表面形成凹凸,以使指紋、污漬等在保護層上不顯眼。 亦即,專利文獻1揭示一種電磁波屏蔽膜,其具備絕緣層與屏蔽層,前述絕緣層表面之三維算術平均表面粗糙度Sa為0.8μm以上。 又,專利文獻2揭示一種電磁波屏蔽膜,其具備絕緣層與屏蔽層,前述絕緣層表面之最大峰高Sp為8.0μm以上。 又,將電磁波屏蔽膜貼附於印刷配線基板,並且上述印刷配線基板具有基底層、形成在基底層上且由銅箔構成之電路圖案、用以保護電路圖案之覆蓋膜時,因光之反射等,印刷配線基板的電路圖案有時會浮現於電磁波屏蔽膜之表面而無法獲得充分隱蔽性。 專利文獻3揭示一種使上述隱蔽性提升的電磁波屏蔽膜。 亦即,專利文獻3揭示一種電磁波屏蔽膜,其具備絕緣保護層與導電性接著劑層等,前述絕緣保護層之85°光澤度小於15。 In order to solve such problems in Patent Document 1 and Patent Document 2, unevenness is formed on the surface of the protective layer of the electromagnetic wave shielding film so that fingerprints, stains, etc. are inconspicuous on the protective layer. That is, Patent Document 1 discloses an electromagnetic wave shielding film that includes an insulating layer and a shielding layer, and the three-dimensional arithmetic mean surface roughness Sa of the surface of the insulating layer is 0.8 μm or more. Furthermore, Patent Document 2 discloses an electromagnetic wave shielding film that includes an insulating layer and a shielding layer, and the maximum peak height Sp on the surface of the insulating layer is 8.0 μm or more. In addition, when the electromagnetic wave shielding film is attached to a printed wiring board, and the printed wiring board has a base layer, a circuit pattern made of copper foil formed on the base layer, and a cover film for protecting the circuit pattern, due to the reflection of light etc., the circuit pattern of the printed wiring board may appear on the surface of the electromagnetic wave shielding film, and sufficient concealment cannot be obtained. Patent Document 3 discloses an electromagnetic wave shielding film that improves the above-mentioned concealment. That is, Patent Document 3 discloses an electromagnetic wave shielding film which includes an insulating protective layer, a conductive adhesive layer, etc., and the 85° glossiness of the insulating protective layer is less than 15.

[先前技術文獻] [專利文獻] [專利文獻1]日本特許第6783205號 [專利文獻2]日本特開2021-010032號公報 [專利文獻3]日本特許第6863908號 [Prior technical literature] [Patent Document] [Patent Document 1] Japanese Patent No. 6783205 [Patent Document 2] Japanese Patent Application Publication No. 2021-010032 [Patent Document 3] Japanese Patent No. 6863908

[發明欲解決之課題] 專利文獻1及專利文獻2是藉由使絕緣層(保護層)表面凹凸之底部至頂部的距離變長,以使指紋、污漬等在絕緣層(保護層)上不顯眼。 又,專利文獻3是使轉印有剝離膜表面凹凸之絕緣保護層(保護層)的表面粗糙度變大,藉此使隱蔽性提升。 如此的絕緣層(保護層)其凸部分之前端容易變得又細又脆弱。所以,一旦絕緣層(保護層)表面受到衝擊,一部分凸部就容易破損等,因此絕緣層(保護層)表面容易產生損傷。亦即,在專利文獻1、專利文獻2及專利文獻3記載之發明中,有絕緣層(保護層)表面之耐刮性低的問題。 在專利文獻1、專利文獻2或專利文獻3之發明中,關於使絕緣層(保護層)之耐刮性提升的方法,認為有使絕緣層(保護層)表面之三維算術平均表面粗糙度Sa變小的方法、或使絕緣層(保護層)表面之最大峰高Sp變小的方法,但此時絕緣層(保護層)表面之隱蔽性會變得不充分。 亦即,在專利文獻1、專利文獻2或專利文獻3之發明中,絕緣層(保護層)表面之隱蔽性與耐刮性處於權衡關係,就這些發明而言難以兼顧隱蔽性及耐刮性。 [Problem to be solved by the invention] Patent Document 1 and Patent Document 2 make the distance from the bottom to the top of the uneven surface of the insulating layer (protective layer) longer so that fingerprints, stains, etc. are inconspicuous on the insulating layer (protective layer). Furthermore, Patent Document 3 increases the surface roughness of the insulating protective layer (protective layer) to which the surface irregularities of the release film are transferred, thereby improving concealment. The tip of the protruding portion of such an insulating layer (protective layer) tends to become thin and fragile. Therefore, if the surface of the insulating layer (protective layer) is impacted, some of the convex portions may be easily broken, and therefore the surface of the insulating layer (protective layer) may be easily damaged. That is, in the inventions described in Patent Document 1, Patent Document 2, and Patent Document 3, there is a problem that the scratch resistance of the surface of the insulating layer (protective layer) is low. In the invention of Patent Document 1, Patent Document 2 or Patent Document 3, it is considered that the method of improving the scratch resistance of the insulating layer (protective layer) is to increase the three-dimensional arithmetic mean surface roughness Sa of the surface of the insulating layer (protective layer). The method is to reduce the maximum peak height Sp of the insulating layer (protective layer) surface, or to reduce the maximum peak height Sp of the insulating layer (protective layer) surface. However, in this case, the concealment of the insulating layer (protective layer) surface will become insufficient. That is, in the inventions of Patent Document 1, Patent Document 2 or Patent Document 3, the concealment and scratch resistance of the surface of the insulating layer (protective layer) are in a trade-off relationship, and it is difficult to achieve both concealment and scratch resistance in these inventions. .

本發明是用以解決上述問題而成之發明,本發明之目的在於提供一種保護層表面之隱蔽性及耐刮性二者夠高的電磁波屏蔽膜。The present invention was made to solve the above-mentioned problems, and an object of the present invention is to provide an electromagnetic wave shielding film that has sufficiently high concealability and scratch resistance on the surface of the protective layer.

[用以解決課題之手段] 本案發明人等發現,在保護層的表面,若界面展開面積比Sdr或均方根斜率Sdq在預定範圍內,將可兼顧隱蔽性及耐刮性,進而完成本發明。 [Means used to solve problems] The inventors of this case discovered that on the surface of the protective layer, if the interface development area ratio Sdr or the root mean square slope Sdq is within a predetermined range, both concealment and scratch resistance can be achieved, and the present invention was completed.

亦即,本發明電磁波屏蔽膜之特徵在於,具備保護層與屏蔽層,上述保護層具有第1主面及與上述第1主面呈對向之第2主面,上述屏蔽層配置在上述保護層之第2主面;且上述第1主面之界面展開面積比Sdr為75.0~250%。That is, the electromagnetic wave shielding film of the present invention is characterized by having a protective layer and a shielding layer. The protective layer has a first main surface and a second main surface opposite to the first main surface. The shielding layer is disposed on the protective layer. The second main surface of the layer; and the interface expansion area ratio Sdr of the above-mentioned first main surface is 75.0~250%.

本發明之電磁波屏蔽膜中,當第1主面之界面展開面積比Sdr為75.0~250%時,第1主面之凹凸之底部至頂部的距離及凹凸之密度會在適當的範圍內。因此,保護層第1主面之隱蔽性及耐刮性會變高。 若第1主面之界面展開面積比Sdr小於75.0%,隱蔽性會降低。 若第1主面之界面展開面積比Sdr大於250%,則耐刮性降低。 In the electromagnetic wave shielding film of the present invention, when the interface development area ratio Sdr of the first main surface is 75.0~250%, the distance from the bottom to the top of the concavities and convexities on the first main surface and the density of the concavities and convexes will be within an appropriate range. Therefore, the concealment and scratch resistance of the first main surface of the protective layer will become higher. If the interface expansion area ratio Sdr of the first main surface is less than 75.0%, the concealment will be reduced. If the interface development area ratio Sdr of the first main surface is greater than 250%, the scratch resistance will be reduced.

又,本發明另一態樣之電磁波屏蔽膜之特徵在於,具備保護層與屏蔽層,上述保護層具有第1主面及與上述第1主面呈對向之第2主面,上述屏蔽層配置在上述保護層之第2主面;且上述第1主面之均方根斜率Sdq為1.50~2.70。Furthermore, an electromagnetic wave shielding film according to another aspect of the present invention is characterized by having a protective layer and a shielding layer. The protective layer has a first main surface and a second main surface opposite to the first main surface. The shielding layer It is arranged on the second main surface of the above-mentioned protective layer; and the root mean square slope Sdq of the above-mentioned first main surface is 1.50~2.70.

本發明之電磁波屏蔽膜中,當第1主面之均方根斜率Sdq為1.50~2.70時,第1主面之凹凸之底部至頂部的距離及凹凸之密度會在適當的範圍內。因此,保護層第1主面之隱蔽性及耐刮性會變高。 若第1主面之均方根斜率Sdq小於1.50,隱蔽性會降低。 若第1主面之均方根斜率Sdq大於2.70,則耐刮性降低。 In the electromagnetic wave shielding film of the present invention, when the root mean square slope Sdq of the first main surface is 1.50~2.70, the distance from the bottom to the top of the unevenness and the density of the unevenness on the first main surface will be within an appropriate range. Therefore, the concealment and scratch resistance of the first main surface of the protective layer will become higher. If the root mean square slope Sdq of the first main surface is less than 1.50, the concealment will be reduced. If the root mean square slope Sdq of the first main surface is greater than 2.70, the scratch resistance is reduced.

本發明之電磁波屏蔽膜中,上述第1主面之最小自相關長度Sal宜為2.5~10.0μm。 滿足如此參數的電磁波屏蔽膜,其保護層第1主面之凹凸之細緻度會變適中。因此,就保護層第1主面而言,隱蔽性變高之同時耐刮性亦會變高。 In the electromagnetic wave shielding film of the present invention, the minimum autocorrelation length Sal of the first main surface is preferably 2.5~10.0 μm. For an electromagnetic wave shielding film that meets these parameters, the roughness of the first main surface of the protective layer will be moderately fine. Therefore, as for the first main surface of the protective layer, the concealability becomes high and the scratch resistance also becomes high.

本發明之電磁波屏蔽膜中,上述第1主面之算術平均高度Sa宜為0.3μm以上且小於0.8μm。 滿足如此參數的電磁波屏蔽膜,其保護層第1主面之凹凸之底部至頂部的距離短。一般而言,當保護層第1主面之凹凸之底部至頂部的距離短時,保護層第1主面之隱蔽性容易變低。 惟,當第1主面之界面展開面積比Sdr為75.0~250%時,或者,第1主面之均方根斜率Sdq為1.50~2.70時,保護層第1主面之隱蔽性便夠高。 In the electromagnetic wave shielding film of the present invention, the arithmetic mean height Sa of the first main surface is preferably 0.3 μm or more and less than 0.8 μm. For an electromagnetic wave shielding film that meets these parameters, the distance from the bottom to the top of the bumps on the first main surface of the protective layer is short. Generally speaking, when the distance from the bottom to the top of the concavities on the first main surface of the protective layer is short, the concealment of the first main surface of the protective layer is likely to be reduced. However, when the interface expansion area ratio Sdr of the first main surface is 75.0~250%, or when the root mean square slope Sdq of the first main surface is 1.50~2.70, the concealment of the first main surface of the protective layer is high enough. .

本發明之電磁波屏蔽膜中,上述第1主面之60°光澤度宜為5.0以下。 又,本發明之電磁波屏蔽膜中,上述第1主面之85°光澤度宜為60.0以下。 就本發明之電磁波屏蔽膜而言,若60°光澤度或85°光澤度在上述範圍內,則電磁波屏蔽膜之保護層第1主面之隱蔽性便夠高。 In the electromagnetic wave shielding film of the present invention, the 60° glossiness of the first main surface is preferably 5.0 or less. Furthermore, in the electromagnetic wave shielding film of the present invention, the 85° glossiness of the first main surface is preferably 60.0 or less. For the electromagnetic wave shielding film of the present invention, if the 60° gloss or the 85° gloss is within the above range, the concealment of the first main surface of the protective layer of the electromagnetic wave shielding film will be sufficiently high.

本發明之電磁波屏蔽膜中,上述屏蔽層是由金屬層構成,且在上述金屬層之與上述保護層相接之主面的相反側主面亦可配置有導電性接著劑層。 又,本發明之電磁波屏蔽膜中,上述屏蔽層亦可由導電性接著劑層構成。 屏蔽層之構成不論是上述何種態樣,皆可適合屏蔽電磁波。 In the electromagnetic wave shielding film of the present invention, the shielding layer is composed of a metal layer, and a conductive adhesive layer may be disposed on the main surface of the metal layer opposite to the main surface in contact with the protective layer. Furthermore, in the electromagnetic wave shielding film of the present invention, the shielding layer may be composed of a conductive adhesive layer. Regardless of the configuration of the shielding layer, it can be suitable for shielding electromagnetic waves.

本發明之電磁波屏蔽膜宜在上述保護層之上述第1主面進一步配置有消光層,在上述消光層之與上述保護層相接之主面的相反側主面配置有基材膜。 在製造本發明之電磁波屏蔽膜時,透過將形成在消光層之凹凸轉印到保護層之第1主面上,可在保護層之第1主面上形成凹凸。因此,透過調整消光層之凹凸,可令保護層第1主面之界面展開面積比Sdr或均方根斜率Sdq在預定的範圍。 又,若在電磁波屏蔽膜配置有基材膜,則可保護保護層之第1主面不受到衝擊等。因此,在運送電磁波屏蔽膜時,可防止電磁波屏蔽膜之保護層受傷。 The electromagnetic wave shielding film of the present invention is preferably further provided with a matting layer on the first main surface of the protective layer, and a base film is disposed on the main surface of the matting layer opposite to the main surface in contact with the protective layer. When manufacturing the electromagnetic wave shielding film of the present invention, the unevenness formed on the matting layer is transferred to the first main surface of the protective layer to form unevenness on the first main surface of the protective layer. Therefore, by adjusting the unevenness of the matting layer, the interface development area ratio Sdr or the root mean square slope Sdq of the first main surface of the protective layer can be within a predetermined range. In addition, if the base film is disposed on the electromagnetic wave shielding film, the first main surface of the protective layer can be protected from impact or the like. Therefore, when transporting the electromagnetic wave shielding film, the protective layer of the electromagnetic wave shielding film can be prevented from being damaged.

[發明效果] 根據本發明,可提供保護層表面之隱蔽性及耐刮性二者夠高的電磁波屏蔽膜。 [Effects of the invention] According to the present invention, it is possible to provide an electromagnetic wave shielding film that has sufficiently high concealability and scratch resistance on the surface of the protective layer.

[用以實施發明之形態] 以下,將具體說明本發明之電磁波屏蔽膜。然而,本發明並不受限於以下實施形態,而可在不變更本發明要旨之範圍內進行適度變更來應用。 [Form used to implement the invention] Hereinafter, the electromagnetic wave shielding film of the present invention will be specifically described. However, the present invention is not limited to the following embodiments, and can be appropriately modified and applied within the scope of the gist of the present invention.

(第1實施形態) 圖1是一剖面圖,其示意性顯示本發明第1實施形態之電磁波屏蔽膜之剖面的一例。 圖1所示電磁波屏蔽膜1具備保護層10與屏蔽層20,上述保護層10具有第1主面10a及與第1主面10a呈對向之第2主面10b,上述屏蔽層20配置在保護層10之第2主面10b。 電磁波屏蔽膜1中,屏蔽層20是由金屬層構成,且在金屬層之與保護層10相接之主面的相反側主面配置有導電性接著劑層30。 (First Embodiment) FIG. 1 is a cross-sectional view schematically showing an example of the cross-section of the electromagnetic wave shielding film according to the first embodiment of the present invention. The electromagnetic wave shielding film 1 shown in FIG. 1 includes a protective layer 10 and a shielding layer 20. The protective layer 10 has a first main surface 10a and a second main surface 10b opposite to the first main surface 10a. The shielding layer 20 is disposed on The second main surface 10b of the protective layer 10. In the electromagnetic wave shielding film 1 , the shielding layer 20 is composed of a metal layer, and the conductive adhesive layer 30 is disposed on the main surface of the metal layer opposite to the main surface in contact with the protective layer 10 .

電磁波屏蔽膜1之必要的構成要件在於,在保護層10之第1主面10a形成有凹凸11,且其表面性狀參數之界面展開面積比Sdr為75.0~250%。 此外,第1主面10a之界面展開面積比Sdr宜為80.0~170%,且以100~130%為佳。 「界面展開面積比Sdr」是表示相對於定義區域之面積來說,定義區域之展開面積(表面積)增加了多少的數值。 The necessary structural elements of the electromagnetic wave shielding film 1 are that the unevenness 11 is formed on the first main surface 10a of the protective layer 10, and the interface development area ratio Sdr of the surface texture parameter is 75.0 to 250%. In addition, the interface expansion area ratio Sdr of the first main surface 10a is preferably 80.0~170%, and preferably 100~130%. "Interface developed area ratio Sdr" is a numerical value indicating how much the developed area (surface area) of the defined area increases relative to the area of the defined area.

當第1主面10a之界面展開面積比Sdr為75.0~250%時,第1主面10a之凹凸11之底部至頂部的距離及凹凸11之密度會在適當的範圍內。因此,保護層10之第1主面10a之隱蔽性及耐刮性會變高。 若第1主面之界面展開面積比Sdr小於75.0%,隱蔽性會降低。 若第1主面之界面展開面積比Sdr大於250%,則耐刮性降低。 When the interface development area ratio Sdr of the first main surface 10a is 75.0~250%, the distance from the bottom to the top of the bumps 11 of the first main surface 10a and the density of the bumps 11 will be within an appropriate range. Therefore, the concealment and scratch resistance of the first main surface 10a of the protective layer 10 will be improved. If the interface expansion area ratio Sdr of the first main surface is less than 75.0%, the concealment will be reduced. If the interface development area ratio Sdr of the first main surface is greater than 250%, the scratch resistance will be reduced.

此外,本說明書中,保護層第1主面之表面性狀(上述Sdr或者後述之Sdq、Sal、Sa等)是基於ISO 25178-6:2010所測定之值,具體測定方法以實施例說明。In addition, in this specification, the surface properties of the first main surface of the protective layer (the above-mentioned Sdr or the later-described Sdq, Sal, Sa, etc.) are values measured based on ISO 25178-6:2010, and the specific measurement method is explained in the examples.

在電磁波屏蔽膜1,保護層10之第1主面10a之均方根斜率Sdq宜為1.50~2.70,且以1.80~2.30為佳、以1.90~2.10更佳。 「均方根斜率Sdq」是從定義區域中所有點之斜率之均方根算出的參數。 當第1主面10a之均方根斜率Sdq為1.50~2.70時,第1主面10a之凹凸11之底部至頂部的距離及凹凸11之密度會在適當的範圍內。 因此,保護層第1主面之隱蔽性及耐刮性會變高。 若第1主面之均方根斜率Sdq小於1.50,隱蔽性會降低。 若第1主面之均方根斜率Sdq大於2.70,則耐刮性降低。 In the electromagnetic wave shielding film 1, the root mean square slope Sdq of the first main surface 10a of the protective layer 10 is preferably 1.50~2.70, preferably 1.80~2.30, and more preferably 1.90~2.10. "Root mean square slope Sdq" is a parameter calculated from the root mean square of the slope of all points in the defined area. When the root mean square slope Sdq of the first main surface 10a is 1.50~2.70, the distance from the bottom to the top of the concave and convex 11 of the first main surface 10a and the density of the concave and convex 11 will be within an appropriate range. Therefore, the concealment and scratch resistance of the first main surface of the protective layer will become higher. If the root mean square slope Sdq of the first main surface is less than 1.50, the concealment will be reduced. If the root mean square slope Sdq of the first main surface is greater than 2.70, the scratch resistance is reduced.

在電磁波屏蔽膜1,保護層10之第1主面10a之最小自相關長度Sal宜為2.5~10.0μm,且以2.5~6.0μm為佳、以2.5~4.5μm更佳。 「最小自相關長度Sal」表示自相關函數最快衰減至特定值s(預設為0.2)方向的水平距離。又,「最小自相關長度Sal」是將凹凸形狀之密集程度以長度單位進行數值化,也就是說值越小紋理越細緻。 In the electromagnetic wave shielding film 1, the minimum autocorrelation length Sal of the first main surface 10a of the protective layer 10 is preferably 2.5~10.0 μm, preferably 2.5~6.0 μm, and more preferably 2.5~4.5 μm. "Minimum autocorrelation length Sal" represents the horizontal distance in the direction where the autocorrelation function decays fastest to a specific value s (default is 0.2). In addition, the "minimum autocorrelation length Sal" quantifies the density of the concave and convex shapes in units of length, which means that the smaller the value, the more detailed the texture.

當保護層10之第1主面10a之最小自相關長度Sal為2.5~10.0μm時,保護層10之第1主面10a之凹凸11之細緻度會變適中。因此,就保護層10之第1主面10a而言,隱蔽性變高之同時耐刮性亦會變高。When the minimum autocorrelation length Sal of the first main surface 10a of the protective layer 10 is 2.5~10.0 μm, the fineness of the unevenness 11 of the first main surface 10a of the protective layer 10 will become moderate. Therefore, as for the first main surface 10a of the protective layer 10, the concealability becomes high and the scratch resistance also becomes high.

在電磁波屏蔽膜1,保護層10之第1主面10a之算術平均高度Sa宜為0.3μm以上且小於0.8μm,且以0.3~0.5μm為佳。 「算術平均高度Sa」是表示自具有凹凸之表面之平均面起算之高度(絕對值)平均值的數值。 In the electromagnetic wave shielding film 1, the arithmetic mean height Sa of the first main surface 10a of the protective layer 10 is preferably 0.3 μm or more and less than 0.8 μm, and preferably 0.3 to 0.5 μm. The "arithmetic mean height Sa" is a numerical value indicating the average height (absolute value) calculated from the average plane of the surface having unevenness.

當保護層10之第1主面10a之算術平均高度Sa為0.3μm以上且小於0.8μm時,保護層10之第1主面10a之凹凸11之底部至頂部的距離短。一般而言,當保護層10之第1主面10a之凹凸11之底部至頂部的距離短時,保護層10之第1主面10a之隱蔽性容易變低。 惟,在電磁波屏蔽膜1,第1主面10a之界面展開面積比Sdr為75.0~250%,因此儘管算術平均高度Sa在上述範圍內,保護層10之第1主面10a之隱蔽性仍然夠高。 When the arithmetic mean height Sa of the first main surface 10a of the protective layer 10 is 0.3 μm or more and less than 0.8 μm, the distance from the bottom to the top of the unevenness 11 of the first main surface 10a of the protective layer 10 is short. Generally speaking, when the distance from the bottom to the top of the concave and convex 11 of the first main surface 10a of the protective layer 10 is short, the concealment of the first main surface 10a of the protective layer 10 is likely to be reduced. However, in the electromagnetic wave shielding film 1, the interface development area ratio Sdr of the first main surface 10a is 75.0~250%. Therefore, although the arithmetic mean height Sa is within the above range, the concealment of the first main surface 10a of the protective layer 10 is still sufficient. high.

在電磁波屏蔽膜1,第1主面10a之60°光澤度宜為5.0以下,且以2.0~4.0為佳。 又,在電磁波屏蔽膜1,第1主面10a之85°光澤度宜為60.0以下,且以30.0~50.0為佳。 就電磁波屏蔽膜1而言,若60°光澤度或85°光澤度在上述範圍內,則電磁波屏蔽膜1之保護層10之第1主面10a之隱蔽性便夠高。 In the electromagnetic wave shielding film 1, the 60° glossiness of the first main surface 10a is preferably 5.0 or less, and preferably 2.0 to 4.0. In addition, in the electromagnetic wave shielding film 1, the 85° glossiness of the first main surface 10a is preferably 60.0 or less, and more preferably 30.0 to 50.0. As for the electromagnetic wave shielding film 1, if the 60° gloss or the 85° gloss is within the above range, the concealment of the first main surface 10a of the protective layer 10 of the electromagnetic wave shielding film 1 will be high enough.

此外,在本說明書中,「60°光澤度」及「85°光澤度」意指使用BYK Gardner micro-gloss(攜帶型光澤計)測出之值。In addition, in this specification, "60° gloss" and "85° gloss" mean the values measured using BYK Gardner micro-gloss (portable gloss meter).

在電磁波屏蔽膜1,第1主面10a之L*值宜為30.0以下,且以26.7~28.0為佳。此外,本說明書中,L*值意指依據JIS Z 8781-4 (2013)所測出之值。In the electromagnetic wave shielding film 1, the L* value of the first main surface 10a is preferably 30.0 or less, and preferably 26.7 to 28.0. In addition, in this specification, the L* value means the value measured in accordance with JIS Z 8781-4 (2013).

以下將詳述電磁波屏蔽膜1之各結構。Each structure of the electromagnetic wave shielding film 1 will be described in detail below.

(保護層) 保護層10宜由樹脂材料構成,並具有絕緣性,且滿足預定的機械強度、耐藥品性及耐熱性。 (protective layer) The protective layer 10 is preferably made of a resin material, has insulation properties, and meets predetermined mechanical strength, chemical resistance, and heat resistance.

構成保護層10之樹脂材料只要具有充分絕緣性則無特別限定,可使用例如:熱塑性樹脂組成物、熱硬化性樹脂組成物及活性能量線硬化性組成物等。The resin material constituting the protective layer 10 is not particularly limited as long as it has sufficient insulating properties. For example, thermoplastic resin compositions, thermosetting resin compositions, active energy ray curable compositions, etc. can be used.

熱塑性樹脂組成物並無特別限定,可使用苯乙烯系樹脂組成物、乙酸乙烯酯系樹脂組成物、聚酯系樹脂組成物、聚乙烯系樹脂組成物、聚丙烯系樹脂組成物、醯亞胺系樹脂組成物及丙烯酸系樹脂組成物等。熱硬化性樹脂組成物並無特別限定,可使用酚系樹脂組成物、環氧系樹脂組成物、胺基甲酸酯系樹脂組成物、三聚氰胺系樹脂組成物及醇酸系樹脂組成物等。活性能量線硬化性組成物並無特別限定,可使用例如分子中具有至少2個(甲基)丙烯醯氧基之聚合性化合物等。該等組成物可1種單獨使用,亦可2種以上併用。The thermoplastic resin composition is not particularly limited, and styrene-based resin compositions, vinyl acetate-based resin compositions, polyester-based resin compositions, polyethylene-based resin compositions, polypropylene-based resin compositions, and imides can be used. resin compositions and acrylic resin compositions, etc. The thermosetting resin composition is not particularly limited, and a phenol-based resin composition, an epoxy-based resin composition, a urethane-based resin composition, a melamine-based resin composition, an alkyd-based resin composition, and the like can be used. The active energy ray curable composition is not particularly limited, and for example, a polymerizable compound having at least two (meth)acryloxy groups in the molecule can be used. One type of these compositions may be used alone, or two or more types may be used in combination.

保護層10亦可視需要而含有硬化促進劑、賦黏劑、抗氧化劑、顏料、染料、塑化劑、紫外線吸收劑、消泡劑、調平劑、填充劑、阻燃劑、黏度調節劑及抗結塊劑等。The protective layer 10 may also contain hardening accelerators, tackifiers, antioxidants, pigments, dyes, plasticizers, ultraviolet absorbers, defoaming agents, leveling agents, fillers, flame retardants, viscosity regulators and Anti-caking agents, etc.

保護層10在第1主面10a具有凹凸11。 形成凹凸11的方法並無特別限定,可利用例如以下方法來形成。 方法:在基材膜形成具有凹凸的消光層後,在該消光層表面塗布用以形成保護層10的樹脂並使樹脂乾燥,藉此將消光層之凹凸轉印到保護層10。 方法:在屏蔽層(金屬層)20塗布用以形成保護層的樹脂,並對該樹脂按壓具有凹凸的鑄模,之後再使樹脂硬化,藉此將鑄模之凹凸轉印到保護層。 方法:於保護層10添加凹凸形成用粒子。 方法:對保護層10之第1主面10a進行噴砂處理而形成凹凸11。 The protective layer 10 has unevenness 11 on the first main surface 10a. The method of forming the concavities and convexities 11 is not particularly limited, and may be formed by, for example, the following method. Method: After forming a matte layer with unevenness on the base film, apply the resin used to form the protective layer 10 on the surface of the matte layer and dry the resin, thereby transferring the unevenness of the matte layer to the protective layer 10 . Method: Apply resin to form a protective layer on the shielding layer (metal layer) 20, press a mold with concavities and convexes on the resin, and then harden the resin to transfer the concavities and convexities of the mold to the protective layer. Method: Add particles for forming unevenness to the protective layer 10 . Method: Sandblast the first main surface 10a of the protective layer 10 to form the concavities and convexities 11 .

上述方法中之較佳方法是:在基材膜形成具有凹凸的消光層後,在該消光層表面塗布用以形成保護層10的樹脂並使樹脂乾燥,藉此將消光層之凹凸轉印到保護層10。A preferred method among the above methods is: after forming a matting layer with concavities and convexities on the base film, coating the resin for forming the protective layer 10 on the surface of the matting layer and drying the resin, thereby transferring the concavities and convexities of the matting layer to the surface of the matting layer. Protective layer 10.

此外,對保護層10添加凹凸形成用粒子來形成凹凸11時,凹凸形成用粒子可使用例如樹脂微粒子或無機微粒子。樹脂微粒子可使用丙烯酸樹脂微粒子、聚丙烯腈微粒子、聚胺基甲酸酯微粒子、聚醯胺微粒子及聚醯亞胺微粒子等。又,無機微粒子可使用碳酸鈣微粒子、矽酸鈣微粒子、黏土、高嶺土、滑石、二氧化矽微粒子、玻璃微粒子、矽藻土、雲母粉、氧化鋁微粒子、氧化鎂微粒子、氧化鋅微粒子、硫酸鋇微粒子、硫酸鋁微粒子、硫酸鈣微粒子及碳酸鎂微粒子等。該等樹脂微粒子及無機微粒子可單獨使用、亦可組合數種使用。從提高保護層之耐刮性的觀點來看,宜為無機微粒子。Furthermore, when the unevenness forming particles are added to the protective layer 10 to form the unevenness 11 , for example, resin fine particles or inorganic fine particles can be used as the unevenness forming particles. Examples of the resin particles include acrylic resin particles, polyacrylonitrile particles, polyurethane particles, polyamide particles, polyimide particles, and the like. In addition, as the inorganic fine particles, calcium carbonate fine particles, calcium silicate fine particles, clay, kaolin, talc, silica fine particles, glass fine particles, diatomaceous earth, mica powder, aluminum oxide fine particles, magnesium oxide fine particles, zinc oxide fine particles, and barium sulfate can be used. Microparticles, aluminum sulfate microparticles, calcium sulfate microparticles and magnesium carbonate microparticles, etc. These resin microparticles and inorganic microparticles can be used individually or in combination of several types. From the viewpoint of improving the scratch resistance of the protective layer, inorganic fine particles are preferred.

保護層10之厚度並無特別限定,可視需要來適當設定,宜為1~20μm,且以4~10μm為佳。 若保護層之厚度小於1μm,則保護層之強度變低,變得難以保護屏蔽層(金屬層)。 若保護層之厚度大於20μm,則電磁波屏蔽膜之撓曲性降低。 The thickness of the protective layer 10 is not particularly limited and can be set appropriately as needed. It is preferably 1 to 20 μm, and preferably 4 to 10 μm. If the thickness of the protective layer is less than 1 μm, the strength of the protective layer becomes low, making it difficult to protect the shielding layer (metal layer). If the thickness of the protective layer is greater than 20 μm, the flexibility of the electromagnetic wave shielding film is reduced.

(金屬層) 金屬層之材料並無特別限定,可使用鎳、銅、銀、錫、金、鈀、鋁、鉻、鈦、鋅及含有2種以上該等金屬之合金等。 (metal layer) The material of the metal layer is not particularly limited, and nickel, copper, silver, tin, gold, palladium, aluminum, chromium, titanium, zinc and alloys containing two or more of these metals can be used.

又,金屬層之材質及厚度,視需要之電磁波屏蔽效果及反覆撓曲/滑動耐性來適宜選擇即可。 例如,從獲得充分之電磁波屏蔽效果的觀點來看,金屬層之厚度宜設為0.1μm以上。 又,從生產性及撓曲性等觀點來看,宜設為8μm以下。 In addition, the material and thickness of the metal layer can be appropriately selected depending on the required electromagnetic wave shielding effect and repeated deflection/sliding resistance. For example, from the viewpoint of obtaining a sufficient electromagnetic wave shielding effect, the thickness of the metal layer is preferably 0.1 μm or more. In addition, from the viewpoint of productivity, flexibility, etc., it is preferable to set it to 8 μm or less.

此外,金屬層可利用電鍍法、無電鍍敷法、濺鍍法、電子束蒸鍍法、真空蒸鍍法、CVD法、金屬有機氣相沉積法等來形成。又,金屬層亦可利用金屬箔、金屬奈米粒子、鱗片狀金屬粒子等來形成。In addition, the metal layer can be formed by electroplating, electroless plating, sputtering, electron beam evaporation, vacuum evaporation, CVD, metal organic vapor deposition, or the like. Moreover, the metal layer can also be formed using metal foil, metal nanoparticles, scaly metal particles, etc.

(導電性接著劑層) 在電磁波屏蔽薄膜1中,導電性接著劑層30可具有各向同性導電性,亦可具有各向異性導電性。 如後述,導電性接著劑層30將會配置於印刷配線板。在如此情況下,若使具有各向同性導電性及各向異性導電性中任一種之導電性接著劑層30與印刷配線板之接地配線接觸,則可經由導電性接著劑層30將印刷配線板之接地配線與電磁波屏蔽膜1之屏蔽層(金屬層)20電連接。藉此,電磁波屏蔽膜1可適合屏蔽電磁波。 (Conductive adhesive layer) In the electromagnetic wave shielding film 1, the conductive adhesive layer 30 may have isotropic conductivity or anisotropic conductivity. As will be described later, the conductive adhesive layer 30 will be disposed on the printed wiring board. In this case, if the conductive adhesive layer 30 having either isotropic conductivity or anisotropic conductivity is brought into contact with the ground wiring of the printed wiring board, the printed wiring can be connected via the conductive adhesive layer 30 The ground wiring of the board is electrically connected to the shielding layer (metal layer) 20 of the electromagnetic wave shielding film 1 . Thereby, the electromagnetic wave shielding film 1 can be suitable for shielding electromagnetic waves.

導電性接著劑層30具各向異性導電性時,會比具有各向同性導電性時更加提升印刷配線板以訊號電路傳送之高頻訊號的傳送特性。When the conductive adhesive layer 30 has anisotropic conductivity, the transmission characteristics of high-frequency signals transmitted by the printed circuit board through the signal circuit will be further improved than when it has isotropic conductivity.

導電性接著劑層30含有導電性填料與接著性樹脂。The conductive adhesive layer 30 contains conductive filler and adhesive resin.

導電性接著劑層30之導電性填料並無特別限定,可為銀粉、銅粉、鎳粉、焊粉、鋁粉、對銅粉實施鍍銀而成之銀包銅粉、以金屬被覆高分子微粒子或玻璃珠等而成之微粒子等。 從經濟性之觀點來看,該等之中以可低價取得之銅粉或銀包銅粉為宜。 The conductive filler of the conductive adhesive layer 30 is not particularly limited, and may be silver powder, copper powder, nickel powder, solder powder, aluminum powder, silver-coated copper powder obtained by silver-plating copper powder, or metal-coated polymer. Microparticles made of microparticles or glass beads, etc. From an economic point of view, among these, copper powder or silver-coated copper powder that can be obtained at a low price is preferable.

導電性填料之形狀並無特別限定,可適當選自球狀、小片(flake)狀、鱗片狀、樹枝狀、棒狀、纖維狀等。該等之中宜為小片狀。 若導電性填料為小片狀導電性填料,則在彎曲電磁波屏蔽膜1時,導電性填料也會彎曲,導電性填料彼此之接觸會變得容易維持。結果就是導電性接著劑層之導電性會變得難以降低。 The shape of the conductive filler is not particularly limited, and may be appropriately selected from spherical, flake, scaly, dendritic, rod, fibrous, etc. shapes. Among these, small flakes are preferred. If the conductive filler is a small plate-shaped conductive filler, when the electromagnetic wave shielding film 1 is bent, the conductive filler will also bend, and the contact between the conductive fillers will become easier to maintain. As a result, the conductivity of the conductive adhesive layer becomes difficult to decrease.

導電性填料之平均長徑並無特別限定,宜為0.5~15.0μm,且以5~13μm為佳。 若導電性填料之平均長徑為0.5μm以上,則導電性接著劑層之導電性會良好。 若導電性填料之平均長徑為15.0μm以下,則可使導電性接著劑層變薄。 此外,本說明書中之導電性填料之平均長徑意指利用以下方法測出之值。 切斷導電性接著劑層獲得剖面,並取得上述剖面之掃描電子顯微鏡法(SEM)圖像。所謂導電性填料之平均長徑,意指該SEM圖像中任意5個導電性填料之長徑的平均值。 The average major diameter of the conductive filler is not particularly limited, but is preferably 0.5 to 15.0 μm, and preferably 5 to 13 μm. If the average major diameter of the conductive filler is 0.5 μm or more, the conductivity of the conductive adhesive layer will be good. If the average major diameter of the conductive filler is 15.0 μm or less, the conductive adhesive layer can be made thinner. In addition, the average major diameter of the conductive filler in this specification means the value measured by the following method. The conductive adhesive layer is cut to obtain a cross section, and a scanning electron microscope (SEM) image of the cross section is obtained. The average long diameter of the conductive filler means the average long diameter of any five conductive fillers in the SEM image.

導電性接著劑層30所含導電性填料之重量比率宜為10~80重量%。 導電性接著劑層30具有各向異性導電性時,導電性接著劑層30所含導電性填料之重量比率宜為10~40重量%,且以15~35重量%為佳。 The weight ratio of the conductive filler contained in the conductive adhesive layer 30 is preferably 10 to 80% by weight. When the conductive adhesive layer 30 has anisotropic conductivity, the weight ratio of the conductive filler contained in the conductive adhesive layer 30 is preferably 10 to 40% by weight, and preferably 15 to 35% by weight.

導電性接著劑層30之厚度並無特別限定,可視需要來適當設定,宜為0.5~30.0μm。 若導電性接著劑層之厚度小於0.5μm,就難以獲得良好之導電性。 若導電性接著劑層之厚度大於30.0μm,則電磁波屏蔽膜整體變厚而變得難以操作。 The thickness of the conductive adhesive layer 30 is not particularly limited and can be appropriately set as needed, and is preferably 0.5~30.0 μm. If the thickness of the conductive adhesive layer is less than 0.5 μm, it will be difficult to obtain good conductivity. If the thickness of the conductive adhesive layer exceeds 30.0 μm, the entire electromagnetic wave shielding film becomes thicker and becomes difficult to handle.

導電性接著劑層30所含接著性樹脂之材料並無特別限定,可使用苯乙烯系樹脂、乙酸乙烯酯系樹脂、聚酯系樹脂、聚乙烯系樹脂、聚丙烯系樹脂、醯亞胺系樹脂、醯胺系樹脂、丙烯酸系樹脂等熱塑性樹脂,或酚系樹脂、環氧系樹脂、胺基甲酸酯系樹脂、三聚氰胺系樹脂、醇酸系樹脂等熱硬化性樹脂等。 導電性接著劑層30之接著性樹脂之材料可為該等中之單獨1種,亦可為2種以上之組合。 The material of the adhesive resin contained in the conductive adhesive layer 30 is not particularly limited, and styrene-based resin, vinyl acetate-based resin, polyester-based resin, polyethylene-based resin, polypropylene-based resin, and imide-based resin can be used. Thermoplastic resins such as resins, amide resins, and acrylic resins, or thermosetting resins such as phenol resins, epoxy resins, urethane resins, melamine resins, and alkyd resins. The material of the adhesive resin of the conductive adhesive layer 30 may be one of them alone, or may be a combination of two or more.

接下來,說明本發明第1實施形態之另一態樣的電磁波屏蔽膜。 圖2是一剖面圖,其示意性顯示本發明第1實施形態另一態樣之電磁波屏蔽膜之剖面的一例。 Next, an electromagnetic wave shielding film according to another aspect of the first embodiment of the present invention will be described. FIG. 2 is a cross-sectional view schematically showing an example of the cross-section of the electromagnetic wave shielding film according to another aspect of the first embodiment of the present invention.

圖2所示電磁波屏蔽膜101具備保護層10與屏蔽層120,上述保護層10具有第1主面10a及與第1主面10a呈對向之第2主面10b,上述屏蔽層120配置在保護層10之第2主面10b。 然後,屏蔽層120是由導電性接著劑層構成。 此外,導電性接著劑層為了可發揮作為屏蔽層之作用,必須為各向同性導電性接著劑層。 The electromagnetic wave shielding film 101 shown in FIG. 2 includes a protective layer 10 and a shielding layer 120. The protective layer 10 has a first main surface 10a and a second main surface 10b opposite to the first main surface 10a. The shielding layer 120 is disposed on The second main surface 10b of the protective layer 10. Then, the shielding layer 120 is composed of a conductive adhesive layer. In addition, in order for the conductive adhesive layer to function as a shielding layer, it must be an isotropic conductive adhesive layer.

亦即,電磁波屏蔽膜101除了金屬層及導電性接著劑層是屏蔽層(導電性接著劑層)120之外,其餘與上述電磁波屏蔽膜1是相同構成。That is, the electromagnetic wave shielding film 101 has the same structure as the above-mentioned electromagnetic wave shielding film 1 except that the metal layer and the conductive adhesive layer are the shielding layer (conductive adhesive layer) 120 .

本發明第1實施形態之電磁波屏蔽膜亦可具有形成有消光層之基材膜。 使用圖式說明所述態樣。 The electromagnetic wave shielding film according to the first embodiment of the present invention may have a base film on which a matte layer is formed. Use diagrams to illustrate the aspects described.

圖3是一剖面圖,其示意性顯示本發明第1實施形態之電磁波屏蔽膜之剖面的一例,上述電磁波屏蔽膜具有消光層及基材膜。 在圖3,上述電磁波屏蔽膜1中,在保護層10之第1主面10a進一步配置有消光層40,且在消光層40之與保護層10相接之主面40a的相反側主面40b配置有基材膜50。 3 is a cross-sectional view schematically showing an example of a cross-section of an electromagnetic wave shielding film having a matting layer and a base film according to the first embodiment of the present invention. In FIG. 3 , in the electromagnetic wave shielding film 1 described above, a matting layer 40 is further disposed on the first main surface 10 a of the protective layer 10 , and a main surface 40 b on the opposite side of the main surface 40 a of the matting layer 40 that is in contact with the protective layer 10 A base film 50 is provided.

在製造電磁波屏蔽膜1時,透過將形成在消光層40之凹凸41轉印到保護層10之第1主面10a上,可在保護層10之第1主面10a上形成凹凸11。因此,透過調整消光層40之凹凸41,可令保護層10之第1主面10a之界面展開面積比Sdr等表面性狀成為所欲之性狀。 又,若在電磁波屏蔽膜1配置有基材膜50,則可保護保護層10之第1主面10a不受到衝擊等。因此,在運送電磁波屏蔽膜1、電磁波屏蔽膜101時,可防止該等之保護層10受傷。 When manufacturing the electromagnetic wave shielding film 1, the unevenness 41 formed on the matting layer 40 is transferred to the first main surface 10a of the protective layer 10, so that the unevenness 11 can be formed on the first main surface 10a of the protective layer 10. Therefore, by adjusting the unevenness 41 of the matting layer 40, the surface properties such as the interface development area ratio Sdr of the first main surface 10a of the protective layer 10 can be made into desired properties. In addition, if the base film 50 is disposed on the electromagnetic wave shielding film 1, the first main surface 10a of the protective layer 10 can be protected from impact or the like. Therefore, when transporting the electromagnetic wave shielding film 1 and the electromagnetic wave shielding film 101, the protective layer 10 can be prevented from being damaged.

此外,消光層40及基材膜50之較佳材料則於稍後本發明第1實施形態之電磁波屏蔽膜之製造方法中進行詳述。In addition, preferred materials for the matting layer 40 and the base film 50 will be described in detail later in the manufacturing method of the electromagnetic wave shielding film according to the first embodiment of the present invention.

又,上述電磁波屏蔽膜101亦可具有形成有消光層之基材膜。In addition, the above-mentioned electromagnetic wave shielding film 101 may have a base film on which a matte layer is formed.

接下來,說明本發明第1實施形態之電磁波屏蔽膜的用途。 本發明第1實施形態之電磁波屏蔽膜會被貼附於印刷配線板上。 以下使用圖式說明本發明第1實施形態之電磁波屏蔽膜的貼附方法及貼附有本發明第1實施形態之電磁波屏蔽膜的屏蔽印刷配線板。 Next, the use of the electromagnetic wave shielding film according to the first embodiment of the present invention will be described. The electromagnetic wave shielding film according to the first embodiment of the present invention is attached to the printed wiring board. The method of attaching the electromagnetic wave shielding film according to the first embodiment of the present invention and the shielding printed wiring board to which the electromagnetic wave shielding film according to the first embodiment of the present invention is attached will be described below using drawings.

圖4A是一剖面圖,其示意性顯示將本發明第1實施形態之電磁波屏蔽膜貼附到印刷配線板之樣子的一例。 圖4B是一剖面圖,其示意性顯示使用有本發明第1實施形態之電磁波屏蔽膜之屏蔽印刷配線板之剖面的一例。 4A is a cross-sectional view schematically showing an example of how the electromagnetic wave shielding film according to the first embodiment of the present invention is attached to a printed wiring board. 4B is a cross-sectional view schematically showing an example of a cross-section of a shielded printed wiring board using the electromagnetic wave shielding film according to the first embodiment of the present invention.

如圖4A所示,具有形成有消光層40之基材膜50的電磁波屏蔽膜1,是以導電性接著劑層30接觸印刷配線板60之方式來貼附。As shown in FIG. 4A , the electromagnetic wave shielding film 1 having the base film 50 on which the matting layer 40 is formed is attached with the conductive adhesive layer 30 in contact with the printed wiring board 60 .

印刷配線板60是由基底膜61、配置在基底膜61上且包含接地電路62a的印刷電路62、及覆蓋印刷電路62的覆蓋膜63構成。此外,在覆蓋膜63形成有露出接地電路62a的開口部63a。The printed wiring board 60 is composed of a base film 61, a printed circuit 62 disposed on the base film 61 and including a ground circuit 62a, and a cover film 63 covering the printed circuit 62. Furthermore, the cover film 63 is formed with an opening 63 a exposing the ground circuit 62 a.

將電磁波屏蔽膜1貼附於印刷配線板60時,是使電磁波屏蔽膜1之導電性接著劑層30埋入覆蓋膜63之開口部63a並與接地電路62a接觸。 如此一來,印刷配線板60之接地電路62a可與電磁波屏蔽膜1之導電性接著劑層30及屏蔽層(金屬層)20電連接。藉此,電磁波屏蔽膜1可適合屏蔽電磁波。 When the electromagnetic wave shielding film 1 is attached to the printed wiring board 60, the conductive adhesive layer 30 of the electromagnetic wave shielding film 1 is embedded in the opening 63a of the cover film 63 and comes into contact with the ground circuit 62a. In this way, the ground circuit 62 a of the printed wiring board 60 can be electrically connected to the conductive adhesive layer 30 and the shielding layer (metal layer) 20 of the electromagnetic wave shielding film 1 . Thereby, the electromagnetic wave shielding film 1 can be suitable for shielding electromagnetic waves.

在印刷配線板60中,基底膜61與覆蓋膜63宜皆由工程塑膠構成。可舉例如:聚丙烯、交聯聚乙烯、聚酯、聚苯并咪唑、聚醯亞胺、聚醯亞胺醯胺、聚醚醯亞胺、聚伸苯硫醚(PPS)等樹脂。In the printed wiring board 60, both the base film 61 and the cover film 63 are preferably made of engineering plastic. Examples include resins such as polypropylene, cross-linked polyethylene, polyester, polybenzimidazole, polyimide, polyimide, polyetherimide, and polyphenylene sulfide (PPS).

在印刷配線板60中,印刷電路62可使用銅等通常的電路用材料。In the printed wiring board 60, a common circuit material such as copper can be used for the printed circuit 62.

基底膜61與印刷電路62可透過接著劑來接著,亦可與所謂的無接著劑型覆銅積層板同樣以不使用接著劑之方式來接合。又,覆蓋膜63可為將多片可撓性絕緣膜透過接著劑貼合而成者,亦可透過感光性絕緣樹脂之塗敷、乾燥、曝光、顯影、熱處理等一連串的手法來形成。The base film 61 and the printed circuit 62 can be bonded through an adhesive, or can be bonded without using an adhesive in the same manner as a so-called adhesive-less copper-clad laminate. In addition, the cover film 63 may be formed by laminating multiple flexible insulating films through an adhesive, or may be formed through a series of techniques such as coating of photosensitive insulating resin, drying, exposure, development, and heat treatment.

將電磁波屏蔽膜1貼附於印刷配線板60之方法可採用以往眾所皆知的方法。 例如,宜為以電磁波屏蔽膜1之導電性接著劑層30接觸印刷配線板60之覆蓋膜63的方式,使電磁波屏蔽膜1配置到印刷配線板60上,之後,在150~200℃、2~5MPa、1~60分鐘之條件下進行熱壓接合。 The electromagnetic wave shielding film 1 can be attached to the printed wiring board 60 by a conventionally known method. For example, it is preferable to arrange the electromagnetic wave shielding film 1 on the printed wiring board 60 in such a manner that the conductive adhesive layer 30 of the electromagnetic wave shielding film 1 contacts the cover film 63 of the printed wiring board 60, and then, at 150 to 200°C, 2 Thermocompression bonding is performed under conditions of ~5MPa and 1 to 60 minutes.

之後,如圖4B所示,可透過將形成有消光層40之基材膜50從電磁波屏蔽膜1剝離,來形成屏蔽印刷配線板70。Thereafter, as shown in FIG. 4B , the base film 50 on which the matting layer 40 is formed is peeled off from the electromagnetic wave shielding film 1 to form the shielding printed wiring board 70 .

接下來,說明電磁波屏蔽膜1之製造方法。 電磁波屏蔽膜1之製造方法包含(1)消光層形成步驟、(2)保護層形成步驟、(3)金屬層形成步驟及(4)導電性接著劑層形成步驟。 各步驟詳述如下。 Next, a method of manufacturing the electromagnetic wave shielding film 1 will be described. The manufacturing method of the electromagnetic wave shielding film 1 includes (1) a matting layer forming step, (2) a protective layer forming step, (3) a metal layer forming step, and (4) a conductive adhesive layer forming step. Each step is detailed below.

(1)消光層形成步驟 圖5是一步驟圖,其示意性顯示本發明第1實施形態之電磁波屏蔽膜之製造方法中消光層形成步驟的一例。 在製造本發明電磁波屏蔽膜時,如圖5所示,準備基材膜50。然後,在基材膜50之主面塗布含有凹凸形成用粒子之樹脂組成物並使其乾燥,藉此形成具有凹凸41的消光層40。 (1) Matting layer formation step FIG. 5 is a step diagram schematically showing an example of a matting layer forming step in the method for manufacturing an electromagnetic wave shielding film according to the first embodiment of the present invention. When manufacturing the electromagnetic wave shielding film of the present invention, as shown in FIG. 5 , a base film 50 is prepared. Then, a resin composition containing particles for forming unevenness is applied to the main surface of the base film 50 and dried, thereby forming the matte layer 40 having the unevenness 41 .

基材膜50之材料並無特別限定,可列舉:聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯、聚氟乙烯、聚二氟亞乙烯、硬質聚氯乙烯、聚二氯亞乙烯、尼龍、聚醯亞胺、聚苯乙烯、聚乙烯醇、乙烯/乙烯醇共聚物、聚碳酸酯、聚丙烯腈、聚丁烯、軟質聚氯乙烯、聚二氟亞乙烯、聚乙烯、聚丙烯、聚胺基甲酸酯、乙烯乙酸乙烯酯共聚物、聚乙酸乙烯酯等塑膠片等;半透明紙(glassine paper)、道林紙、牛皮紙、銅版紙等紙類;各種不織布、合成紙、金屬箔或該等組合而成之複合膜等。The material of the base film 50 is not particularly limited, and may include: polyethylene terephthalate, polyethylene naphthalate, polyvinyl fluoride, polyvinylidene fluoride, rigid polyvinyl chloride, polydichloroethylene Ethylene, nylon, polyimide, polystyrene, polyvinyl alcohol, ethylene/vinyl alcohol copolymer, polycarbonate, polyacrylonitrile, polybutylene, soft polyvinyl chloride, polyvinylidene fluoride, polyethylene, Polypropylene, polyurethane, ethylene vinyl acetate copolymer, polyvinyl acetate and other plastic sheets; translucent paper (glassine paper), Dowling paper, kraft paper, coated paper and other paper types; various non-woven fabrics, synthetic Paper, metal foil or composite films composed of these.

構成消光層40之凹凸形成用粒子並無特別限定,可使用樹脂微粒子或無機微粒子。樹脂微粒子可使用丙烯酸樹脂微粒子、聚丙烯腈微粒子、聚胺基甲酸酯微粒子、聚醯胺微粒子、聚醯亞胺微粒子等。又,無機微粒子可使用碳酸鈣微粒子、矽酸鈣微粒子、黏土、高嶺土、滑石、二氧化矽微粒子、玻璃微粒子、矽藻土、雲母粉、氧化鋁微粒子、氧化鎂微粒子、氧化鋅微粒子、硫酸鋇微粒子、硫酸鋁微粒子、硫酸鈣微粒子、碳酸鎂微粒子等。該等樹脂微粒子及無機微粒子可單獨使用、亦可組合數種使用。The uneven-forming particles constituting the matting layer 40 are not particularly limited, and resin fine particles or inorganic fine particles can be used. Examples of the resin particles include acrylic resin particles, polyacrylonitrile particles, polyurethane particles, polyamide particles, and polyimide particles. In addition, as the inorganic fine particles, calcium carbonate fine particles, calcium silicate fine particles, clay, kaolin, talc, silica fine particles, glass fine particles, diatomaceous earth, mica powder, aluminum oxide fine particles, magnesium oxide fine particles, zinc oxide fine particles, and barium sulfate can be used. Microparticles, aluminum sulfate microparticles, calcium sulfate microparticles, magnesium carbonate microparticles, etc. These resin microparticles and inorganic microparticles can be used individually or in combination of several types.

構成消光層40之樹脂成分並無特別限定,可使用聚酯系樹脂組成物、丙烯酸系樹脂組成物、酚系樹脂組成物、環氧系樹脂組成物、胺基甲酸酯系樹脂組成物、聚矽氧系樹脂組成物、三聚氰胺系樹脂組成物及醇酸系樹脂組成物等。The resin component constituting the matting layer 40 is not particularly limited, and polyester resin compositions, acrylic resin compositions, phenol resin compositions, epoxy resin compositions, urethane resin compositions, Polysilicone resin compositions, melamine resin compositions, alkyd resin compositions, etc.

關於消光層40之凹凸41的性狀,可透過調整所使用之凹凸形成用粒子之種類、大小、使用量或者樹脂成分之種類來做成所欲之性狀。Regarding the properties of the unevenness 41 of the matte layer 40, desired properties can be achieved by adjusting the type, size, and usage amount of the unevenness-forming particles used, or the type of resin component.

(2)保護層形成步驟 圖6是一步驟圖,其示意性顯示本發明第1實施形態之電磁波屏蔽膜之製造方法中保護層形成步驟的一例。 接下來,如圖6所示,在消光層40之形成有凹凸41的主面形成保護層10。藉此,消光層40之凹凸41會轉印到保護層10而形成保護層10之凹凸11。 形成保護層10之方法可採用以往眾所皆知的方法。 (2) Protective layer formation step 6 is a step diagram schematically showing an example of a protective layer forming step in the method for manufacturing an electromagnetic wave shielding film according to the first embodiment of the present invention. Next, as shown in FIG. 6 , the protective layer 10 is formed on the main surface of the matting layer 40 on which the unevenness 41 is formed. Thereby, the unevenness 41 of the matting layer 40 will be transferred to the protective layer 10 to form the unevenness 11 of the protective layer 10 . The protective layer 10 can be formed by a conventionally known method.

(3)金屬層形成步驟 圖7是一步驟圖,其示意性顯示本發明第1實施形態之電磁波屏蔽膜之製造方法中金屬層形成步驟的一例。 接下來,如圖7所示,在保護層10之第2主面10b形成屏蔽層(金屬層)20。 形成金屬層之方法並無特別限定,可採用將已形成預定厚度之金屬箔貼合到保護層10的方法、或利用蒸鍍或鍍敷等在保護層10之表面形成金屬層的方法。 (3) Metal layer formation step 7 is a step diagram schematically showing an example of a metal layer forming step in the method for manufacturing an electromagnetic wave shielding film according to the first embodiment of the present invention. Next, as shown in FIG. 7 , a shield layer (metal layer) 20 is formed on the second main surface 10 b of the protective layer 10 . The method of forming the metal layer is not particularly limited. A metal foil having a predetermined thickness can be bonded to the protective layer 10 , or a metal layer can be formed on the surface of the protective layer 10 by evaporation or plating.

(4)導電性接著劑層形成步驟 圖8是一步驟圖,其示意性顯示本發明第1實施形態之電磁波屏蔽膜之製造方法中導電性接著劑層形成步驟的一例。 接下來,如圖7所示,在屏蔽層(金屬層)20上形成導電性接著劑層30。 形成導電性接著劑層30之方法並無特別限定,可藉由塗布導電性接著劑層用組成物來進行,上述導電性接著劑層用組成物含有構成導電性接著劑層30之材料。 塗布方式為以往眾所皆知的塗布方法,可舉例如:凹板塗布方式、接觸塗布(kiss coat)方式、模具塗布方式、脣口塗布方式、缺角輪塗布(comma coat)方式、刮刀塗布(blade coat)方式、輥塗方式、刮刀塗布(knife coat)方式、噴塗方式、棒塗方式、旋塗方式、浸塗方式等。 (4) Conductive adhesive layer formation step 8 is a step diagram schematically showing an example of a conductive adhesive layer forming step in the method for manufacturing an electromagnetic wave shielding film according to the first embodiment of the present invention. Next, as shown in FIG. 7 , the conductive adhesive layer 30 is formed on the shield layer (metal layer) 20 . The method of forming the conductive adhesive layer 30 is not particularly limited, and may be performed by applying a conductive adhesive layer composition containing the material constituting the conductive adhesive layer 30 . The coating method is a conventionally well-known coating method, and examples thereof include gravure coating, kiss coat, die coating, lip coating, comma coat, and knife coating. (blade coat) method, roller coating method, knife coat method, spray coating method, rod coating method, spin coating method, dip coating method, etc.

經由以上步驟,可製造電磁波屏蔽膜1。 此外,若將圖8之電磁波屏蔽膜1旋轉180°,就會是圖3所示之具有形成有消光層40之基材膜50的電磁波屏蔽膜1。 Through the above steps, the electromagnetic wave shielding film 1 can be manufactured. In addition, if the electromagnetic wave shielding film 1 of FIG. 8 is rotated 180°, it will be the electromagnetic wave shielding film 1 having the base film 50 formed with the matting layer 40 as shown in FIG. 3 .

此外,在製造上述電磁波屏蔽膜101時,可不進行「(3)金屬層形成步驟」,而是在「(4)導電性接著劑層形成步驟」中,在保護層之第2主面形成具有各向同性導電性之導電性接著劑層,藉此來製造電磁波屏蔽膜101。In addition, when manufacturing the above-mentioned electromagnetic wave shielding film 101, the "(3) Metal layer forming step" may not be performed, but in the "(4) Conductive adhesive layer forming step", a layer of The electromagnetic wave shielding film 101 is manufactured by using a conductive adhesive layer with isotropic conductivity.

又,在上述「(1)消光層形成步驟」中,是透過在基材膜50塗布含有凹凸形成用粒子之樹脂組成物來形成消光層40,然而在製造本發明第1實施形態之電磁波屏蔽時,可對基材膜50實施壓花加工以將一部分基材膜50做成消光層40,亦可藉由對基材膜50實施噴砂處理來將一部分基材膜50做成消光層40。 此外,透過調整壓花加工之條件及噴砂處理之條件,可控制消光層40之凹凸41的性狀。 Moreover, in the above-mentioned "(1) matting layer forming step", the matting layer 40 is formed by coating the base film 50 with a resin composition containing particles for forming unevenness. In this case, the base film 50 can be embossed to form a part of the base film 50 into the matte layer 40 , or a part of the base film 50 can be made into the matt layer 40 by sandblasting the base film 50 . In addition, by adjusting the conditions of embossing and sandblasting, the shape of the concavities and convexities 41 of the matte layer 40 can be controlled.

(第2實施形態) 本發明第2實施形態之電磁波屏蔽膜之必要的構成要件在於,第1主面之界面展開面積比Sdr改變成75.0~250%,且第1主面之均方根斜率Sdq為1.50~2.70,除此之外,其餘構成則與上述本發明第1實施形態之電磁波屏蔽膜相同。 (Second Embodiment) The necessary components of the electromagnetic wave shielding film according to the second embodiment of the present invention are that the interface development area ratio Sdr of the first main surface is changed to 75.0~250%, and the root mean square slope Sdq of the first main surface is 1.50~2.70. Except for this, the rest of the structure is the same as that of the electromagnetic wave shielding film of the first embodiment of the present invention.

在本發明第2實施形態之電磁波屏蔽膜,第1主面之均方根斜率Sdq較佳為1.80~2.30,更佳為1.90~2.10。In the electromagnetic wave shielding film according to the second embodiment of the present invention, the root mean square slope Sdq of the first main surface is preferably 1.80 to 2.30, more preferably 1.90 to 2.10.

又,在本發明第2實施形態之電磁波屏蔽膜,第1主面之界面展開面積比Sdr宜為75.0~250%,且以80.0~170%為佳、以100~130%更佳。Furthermore, in the electromagnetic wave shielding film according to the second embodiment of the present invention, the interface development area ratio Sdr of the first main surface is preferably 75.0 to 250%, more preferably 80.0 to 170%, and more preferably 100 to 130%.

關於上述之外的特點,本發明第2實施形態之電磁波屏蔽膜的適宜構成與上述本發明第1實施形態之電磁波屏蔽膜的適宜構成相同。Regarding features other than those described above, the suitable structure of the electromagnetic wave shielding film according to the second embodiment of the present invention is the same as the suitable structure of the electromagnetic wave shielding film according to the first embodiment of the present invention.

(其他實施形態) 就本發明之電磁波屏蔽膜而言,當屏蔽層是由金屬層構成時,亦可在金屬層之主面中,與保護層相接之主面的相反側主面配置有非導電性接著劑層。 在如此態樣之本發明電磁波屏蔽膜中,可透過金屬層充分屏蔽電磁波。 非導電性接著劑層之材料並無特別限定,可使用苯乙烯系樹脂、乙酸乙烯酯系樹脂、聚酯系樹脂、聚乙烯系樹脂、聚丙烯系樹脂、醯亞胺系樹脂、醯胺系樹脂、丙烯酸系樹脂等熱塑性樹脂,或酚系樹脂、環氧系樹脂、胺基甲酸酯系樹脂、三聚氰胺系樹脂、醇酸系樹脂等熱硬化性樹脂等。 (Other embodiments) Regarding the electromagnetic wave shielding film of the present invention, when the shielding layer is composed of a metal layer, a non-conductive adhesive may be disposed on the main surface of the metal layer opposite to the main surface in contact with the protective layer. layer. In such an aspect, the electromagnetic wave shielding film of the present invention can fully shield electromagnetic waves through the metal layer. The material of the non-conductive adhesive layer is not particularly limited, and styrene-based resins, vinyl acetate-based resins, polyester-based resins, polyethylene-based resins, polypropylene-based resins, amide-based resins, and amide-based resins can be used. resin, thermoplastic resin such as acrylic resin, or thermosetting resin such as phenol resin, epoxy resin, urethane resin, melamine resin, alkyd resin, etc.

[實施例] 以下顯示更具體說明本發明之實施例,然本發明並不受限於該等實施例。 [Example] The following shows embodiments that illustrate the present invention in more detail, but the present invention is not limited to these embodiments.

(實施例1)~(實施例11)及(比較例1)~(比較例5) 以下之電磁波屏蔽膜之製造方法,在各實施例及各比較例中,除了「(1)消光層形成步驟」不同之外,其他步驟為共通的步驟。 (Example 1) ~ (Example 11) and (Comparative Example 1) ~ (Comparative Example 5) In the following manufacturing methods of electromagnetic wave shielding films, in each of the examples and comparative examples, except for "(1) Matting layer formation step", other steps are common.

(1)消光層形成步驟 準備聚對苯二甲酸乙二酯膜作為基材膜。 接下來,在聚對苯二甲酸乙二酯膜的主面,以厚度成為4.0μm之方式塗布含有凹凸形成用粒子的環氧系樹脂,形成具有凹凸的消光層。 此時,為了使所製造之各實施例及各比較例之電磁波屏蔽膜之保護層第1主面的表面性狀成為表1所示之值,而調整凹凸形成用粒子之種類、大小、使用量。 (1) Matting layer formation step Prepare a polyethylene terephthalate film as the base film. Next, an epoxy resin containing particles for forming uneven surfaces was applied to the main surface of the polyethylene terephthalate film so that the thickness became 4.0 μm, thereby forming a matte layer having uneven surfaces. At this time, in order to make the surface properties of the first main surface of the protective layer of the electromagnetic wave shielding films of the manufactured Examples and Comparative Examples reach the values shown in Table 1, the type, size, and usage amount of the particles for forming the unevenness were adjusted. .

(2)保護層形成步驟 接下來,於消光層塗敷環氧樹脂,並使用電烘箱在100℃下加熱2分鐘,製作厚度5μm之保護層。藉此,將消光層之凹凸轉印到保護層之第1主面。 (2) Protective layer formation step Next, apply epoxy resin on the matting layer and heat it in an electric oven at 100°C for 2 minutes to create a protective layer with a thickness of 5 μm. Thereby, the unevenness of the matting layer is transferred to the first main surface of the protective layer.

(3)金屬層形成步驟 之後,在保護層上,利用無電鍍敷形成2μm之銅層。該銅層會成爲屏蔽層。 (3) Metal layer formation step Afterwards, a 2 μm copper layer was formed on the protective layer by electroless plating. This copper layer will act as a shield.

(4)導電性接著劑層形成步驟 接下來,以使固體成分量成為20質量%之方式,於甲苯中添加雙酚A型環氧系樹脂100質量份、硬化劑(三菱化學製、ST14)0.1質量份、樹枝狀銀包銅粉(平均粒徑13μm)25質量份,並攪拌混合以調製導電性接著劑層用組成物。將獲得之導電性接著劑層用組成物塗布於銅層,形成厚度15μm之導電性接著劑層。 (4) Conductive adhesive layer formation step Next, 100 parts by mass of bisphenol A-type epoxy resin, 0.1 part by mass of hardener (ST14 manufactured by Mitsubishi Chemical Co., Ltd.), and dendritic silver-coated copper powder were added to toluene so that the solid content became 20% by mass. (average particle diameter: 13 μm), and stirred and mixed to prepare a composition for a conductive adhesive layer. The obtained composition for conductive adhesive layer was applied to the copper layer to form a conductive adhesive layer with a thickness of 15 μm.

經由以上步驟,製造出各實施例及各比較例之電磁波屏蔽膜。Through the above steps, the electromagnetic wave shielding films of each embodiment and each comparative example were manufactured.

[電磁波屏蔽膜之評價] 準備厚度25μm之聚醯亞胺膜作為被接著構件模型,並使導電性接著劑層接觸該聚醯亞胺膜來配置各實施例及各比較例之電磁波屏蔽膜,使用壓機並在170℃、3分鐘、2.0MPa之條件下加熱加壓,進一步在150℃下加熱1小時而進行貼合。 之後,剝離形成有消光層之基材膜,並如下來測定及評價各實施例及各比較例之電磁波屏蔽膜之保護層第1主面的性狀等。 [Evaluation of electromagnetic wave shielding film] A polyimide film with a thickness of 25 μm was prepared as a model of the member to be adhered, and the electromagnetic wave shielding film of each example and each comparative example was arranged by contacting the conductive adhesive layer with the polyimide film, using a press and heating at 170°C , 3 minutes, heating and pressing under the conditions of 2.0MPa, and further heating at 150°C for 1 hour for bonding. After that, the base film on which the matting layer was formed was peeled off, and the properties of the first main surface of the protective layer of the electromagnetic wave shielding films of each example and each comparative example were measured and evaluated as follows.

[保護層表面性狀之測定] 使用共軛焦顯微鏡(Lasertec公司製、OPTELICS HYBRID、接物鏡100倍),測定各實施例及各比較例之電磁波屏蔽膜之保護層表面的任意5處,之後,使用資料解析軟體(LMeye7)進行表面傾斜度之修正,並依據ISO 25178-6:2010測定表面性狀。 此外,S濾波器的截止波長設為0.0025mm,L濾波器的截止波長設為0.8mm。 結果顯示於表1。 [Measurement of surface properties of protective layer] Using a conjugate focus microscope (OPTELICS HYBRID, manufactured by Lasertec Corporation, with an objective lens of 100 times), five arbitrary points on the surface of the protective layer of the electromagnetic wave shielding film of each example and each comparative example were measured, and then data analysis software (LMeye7) was used. Correction of surface inclination and determination of surface properties in accordance with ISO 25178-6:2010. In addition, the cut-off wavelength of the S filter is set to 0.0025 mm, and the cut-off wavelength of the L filter is set to 0.8 mm. The results are shown in Table 1.

[光澤度之測定] 使用BYK Gardner micro-gloss(攜帶型光澤計)測定各實施例及各比較例之電磁波屏蔽膜之保護層表面之60°光澤度及85°光澤度。結果顯示於表1。 [Measurement of Glossiness] BYK Gardner micro-gloss (portable gloss meter) was used to measure the 60° gloss and the 85° gloss of the protective layer surface of the electromagnetic wave shielding films of each example and each comparative example. The results are shown in Table 1.

[L*值之測定] 使用積分球分光測色計(X-Rite公司製、Ci64、鎢光源)測定各實施例及各比較例之電磁波屏蔽膜之保護層表面之L*值。此外,亦測定a*值及b*值。 [Measurement of L* value] The L* value of the protective layer surface of the electromagnetic wave shielding film of each example and each comparative example was measured using an integrating sphere spectrophotometer (made by X-Rite, Ci64, tungsten light source). In addition, a* value and b* value were also measured.

[耐刮性之評價] 利用指甲以0.5~0.8N之荷重刮劃各實施例及各比較例之電磁波屏蔽膜之保護層。之後,目視各實施例及各比較例之電磁波屏蔽膜之保護層,並以評分1~6來評價耐刮性。此外,在本評價中,評分越高意味著耐刮性越高。評價結果顯示於表1。 關於評分之基準,顯示於圖9A~圖9F。 圖9A是一照片,其顯示在耐刮性評價中為評分6之基準之電磁波屏蔽膜之保護層的表面狀態。 圖9B是一照片,其顯示在耐刮性評價中為評分5之基準之電磁波屏蔽膜之保護層的表面狀態。 圖9C是一照片,其顯示在耐刮性評價中為評分4之基準之電磁波屏蔽膜之保護層的表面狀態。 圖9D是一照片,其顯示在耐刮性評價中為評分3之基準之電磁波屏蔽膜之保護層的表面狀態。 圖9E是一照片,其顯示在耐刮性評價中為評分2之基準之電磁波屏蔽膜之保護層的表面狀態。 圖9F是一照片,其顯示在耐刮性評價中為評分1之基準之電磁波屏蔽膜之保護層的表面狀態。 [Evaluation of scratch resistance] Use your fingernail to scratch the protective layer of the electromagnetic wave shielding film of each example and each comparative example with a load of 0.5~0.8N. After that, the protective layer of the electromagnetic wave shielding film of each example and each comparative example was visually inspected, and the scratch resistance was evaluated on a scale of 1 to 6. Additionally, in this review, higher scores mean greater scratch resistance. The evaluation results are shown in Table 1. The scoring criteria are shown in Figures 9A to 9F. FIG. 9A is a photograph showing the surface state of the protective layer of the electromagnetic wave shielding film that is the basis for a score of 6 in the scratch resistance evaluation. FIG. 9B is a photograph showing the surface state of the protective layer of the electromagnetic wave shielding film that is the basis for a score of 5 in the scratch resistance evaluation. FIG. 9C is a photograph showing the surface state of the protective layer of the electromagnetic wave shielding film that is the basis for a score of 4 in the scratch resistance evaluation. FIG. 9D is a photograph showing the surface state of the protective layer of the electromagnetic wave shielding film that is the basis for a score of 3 in the scratch resistance evaluation. FIG. 9E is a photograph showing the surface state of the protective layer of the electromagnetic wave shielding film that is the basis for a score of 2 in the scratch resistance evaluation. FIG. 9F is a photograph showing the surface state of the protective layer of the electromagnetic wave shielding film that is the basis for a score of 1 in the scratch resistance evaluation.

[隱蔽性之評價] 目視各實施例及各比較例之電磁波屏蔽膜之保護層之第1主面,並以目視判定隱蔽性。 具體而言,是使用壓機將印刷配線板與電磁波屏蔽膜在溫度:170℃、時間:3分鐘、壓力:2~3MPa之條件下進行接著,製作成屏蔽配線基板;上述印刷配線板具有基底層、設置在基底層上且由銅箔(線寬為0.1mm、高度為12μm)構成之電路圖案、及以覆蓋電路圖案之方式並透過接著劑層(厚度25μm)接著於基底層的聚醯亞胺膜(厚度12.5μm)。將屏蔽配線基板放置在平坦的桌面上,並在屏蔽配線基板表面之照度為800~1000勒克斯的環境下,評價是否可從電磁波屏蔽膜側觀看到電路圖案。觀看角度是設在對電磁波屏蔽膜面為0~180°之範圍。 將該結果顯示於表1。 此外,判定基準如下。 圖10A是在電磁波屏蔽膜之保護層第1主面之隱蔽性判定中為「優(◎)」之基準的保護層第1主面的相片。 圖10B是在電磁波屏蔽膜之保護層第1主面之隱蔽性判定中為「良(〇)」之基準的保護層表面的相片。 圖10C是在電磁波屏蔽膜之保護層第1主面之隱蔽性判定中為「可(△)」之基準的保護層第1主面的相片。 優(◎):如圖10A所示,是保護層第1主面之光澤被充分抑制的消光調,無法判別印刷配線板的電路圖案。 良(〇):如圖10B所示,是保護層第1主面之光澤被某程度上抑制的消光調,幾乎無法判別印刷配線板的電路圖案。 可(△):如圖10C所示,無法抑制保護層第1主面之光澤,難稱為消光調,可判別印刷配線板的電路圖案。 [Evaluation of concealment] The first main surface of the protective layer of the electromagnetic wave shielding film of each example and each comparative example was visually inspected, and the concealment was visually determined. Specifically, a press is used to join the printed wiring board and the electromagnetic wave shielding film under conditions of temperature: 170°C, time: 3 minutes, and pressure: 2~3MPa to produce a shielding wiring substrate; the above-mentioned printed wiring board has a base layer, a circuit pattern composed of copper foil (line width 0.1 mm, height 12 μm) provided on the base layer, and a polyethylene layer covering the circuit pattern and adhered to the base layer through an adhesive layer (thickness 25 μm) Imine film (thickness 12.5μm). Place the shielded wiring board on a flat table, and evaluate whether the circuit pattern can be seen from the electromagnetic wave shielding film side in an environment where the illumination on the surface of the shielding wiring board is 800 to 1000 lux. The viewing angle is set in the range of 0~180° for the electromagnetic wave shielding film surface. The results are shown in Table 1. In addition, the judgment criteria are as follows. FIG. 10A is a photograph of the first main surface of the protective layer of the electromagnetic wave shielding film, which is the criterion of "excellent (◎)" in the concealment judgment of the first main surface of the protective layer of the electromagnetic wave shielding film. 10B is a photograph of the surface of the protective layer that is the criterion of "good (0)" in the concealment judgment of the first main surface of the protective layer of the electromagnetic wave shielding film. FIG. 10C is a photograph of the first main surface of the protective layer of the electromagnetic wave shielding film, which is the criterion of "acceptable (△)" in the concealment judgment of the first main surface of the protective layer of the electromagnetic wave shielding film. Excellent (◎): As shown in Figure 10A, the glossiness of the first main surface of the protective layer is sufficiently suppressed and the circuit pattern of the printed wiring board cannot be distinguished. Good (0): As shown in FIG. 10B , the glossiness of the first main surface of the protective layer is suppressed to a certain extent, making it almost impossible to identify the circuit pattern of the printed wiring board. Yes (△): As shown in Figure 10C, the gloss of the first main surface of the protective layer cannot be suppressed, and it is difficult to call it matting. The circuit pattern of the printed wiring board can be identified.

[表1] [Table 1]

如表1所示,可看出當電磁波屏蔽膜之保護層第1主面之界面展開面積比Sdr為75.0~250%時、及均方根斜率Sdq為1.50~2.70時,隱蔽性及耐刮性二者是高的。 又,可看出當界面展開面積比Sdr小於75.0%時、或均方根斜率Sdq小於1.50時,隱蔽性變低。 又,可看出當界面展開面積比Sdr大於250%時、或均方根斜率Sdq大於2.70時,耐刮性變低。 As shown in Table 1, it can be seen that when the interface expansion area ratio Sdr of the first main surface of the protective layer of the electromagnetic wave shielding film is 75.0~250%, and the root mean square slope Sdq is 1.50~2.70, the concealment and scratch resistance are better. Both sexes are high. In addition, it can be seen that when the interface development area ratio Sdr is less than 75.0%, or when the root mean square slope Sdq is less than 1.50, the concealment becomes low. In addition, it can be seen that when the interface development area ratio Sdr is greater than 250% or the root mean square slope Sdq is greater than 2.70, the scratch resistance becomes low.

本說明書記載以下事項。This manual describes the following matters.

本揭示(1)是一種電磁波屏蔽膜,特徵在於具備保護層與屏蔽層,上述保護層具有第1主面及與上述第1主面呈對向之第2主面,上述屏蔽層配置在上述保護層之第2主面,且上述第1主面之界面展開面積比Sdr為75.0~250%。The present disclosure (1) is an electromagnetic wave shielding film, which is characterized by having a protective layer and a shielding layer. The protective layer has a first main surface and a second main surface opposite to the first main surface. The shielding layer is arranged on the above-mentioned The second main surface of the protective layer, and the interface expansion area ratio Sdr of the above-mentioned first main surface is 75.0~250%.

本揭示(2)是一種電磁波屏蔽膜,特徵在於具備保護層與屏蔽層,上述保護層具有第1主面及與上述第1主面呈對向之第2主面,上述屏蔽層配置在上述保護層之第2主面,且上述第1主面之均方根斜率Sdq為1.50~2.70。The present disclosure (2) is an electromagnetic wave shielding film, which is characterized by having a protective layer and a shielding layer. The protective layer has a first main surface and a second main surface opposite to the first main surface. The shielding layer is arranged on the above-mentioned The second main surface of the protective layer, and the root mean square slope Sdq of the first main surface is 1.50~2.70.

本揭示(3)是如本揭示(1)或(2)之電磁波屏蔽膜,其中上述第1主面之最小自相關長度Sal為2.5~10.0μm。The disclosure (3) is an electromagnetic wave shielding film according to the disclosure (1) or (2), wherein the minimum autocorrelation length Sal of the above-mentioned first main surface is 2.5~10.0 μm.

本揭示(4)是如本揭示(1)~(3)中任一項之電磁波屏蔽膜,其中上述第1主面之算術平均高度Sa為0.3μm以上且小於0.8μm。The present disclosure (4) is the electromagnetic wave shielding film according to any one of the present disclosures (1) to (3), wherein the arithmetic mean height Sa of the first main surface is 0.3 μm or more and less than 0.8 μm.

本揭示(5)是如本揭示(1)~(4)中任一項之電磁波屏蔽膜,其中上述第1主面之60°光澤度為5.0以下。The present disclosure (5) is the electromagnetic wave shielding film according to any one of the present disclosures (1) to (4), wherein the 60° glossiness of the first main surface is 5.0 or less.

本揭示(6)是如本揭示(1)~(5)中任一項之電磁波屏蔽膜,其中上述第1主面之85°光澤度為60.0以下。The present disclosure (6) is the electromagnetic wave shielding film according to any one of the present disclosures (1) to (5), wherein the 85° glossiness of the first main surface is 60.0 or less.

本揭示(7)是如本揭示(1)~(6)中任一項之電磁波屏蔽膜,其中上述屏蔽層是由金屬層構成,且在上述金屬層之與上述保護層相接之主面的相反側主面配置有導電性接著劑層。The present disclosure (7) is an electromagnetic wave shielding film according to any one of the disclosures (1) to (6), wherein the shielding layer is composed of a metal layer, and the main surface of the metal layer that is in contact with the protective layer A conductive adhesive layer is arranged on the opposite main surface.

本揭示(8)是如本揭示(1)~(6)中任一項之電磁波屏蔽膜,其中上述屏蔽層是由導電性接著劑層構成。The present disclosure (8) is the electromagnetic wave shielding film according to any one of the present disclosures (1) to (6), wherein the above-mentioned shielding layer is composed of a conductive adhesive layer.

本揭示(9)是如本揭示(1)~(8)中任一項之電磁波屏蔽膜,其中在上述保護層之上述第1主面進一步配置有消光層,在上述消光層之與上述保護層相接之主面的相反側主面配置有基材膜。The present disclosure (9) is the electromagnetic wave shielding film according to any one of the present disclosures (1) to (8), wherein a matting layer is further disposed on the first main surface of the above-mentioned protective layer, and between the above-mentioned matting layer and the above-mentioned protective layer A base film is arranged on the main surface opposite to the main surface where the layers are in contact.

1,101:電磁波屏蔽膜 10:保護層 10a:保護層之第1主面 10b:保護層之第2主面 11:保護層之凹凸 20,120:屏蔽層 30:導電性接著劑層 40:消光層 40a,40b:消光層之主面 41:消光層之凹凸 50:基材膜 60:印刷配線板 61:基底膜 62:印刷電路 62a:接地電路 63:覆蓋膜 63a:開口部 70:屏蔽印刷配線板 1,101:Electromagnetic wave shielding film 10:Protective layer 10a: The first main surface of the protective layer 10b: The second main surface of the protective layer 11: The unevenness of the protective layer 20,120:shielding layer 30: Conductive adhesive layer 40:Matting layer 40a, 40b: Main surface of matting layer 41: The unevenness of the matte layer 50:Substrate film 60:Printed wiring board 61: basement membrane 62:Printed circuit 62a: Ground circuit 63: Covering film 63a: opening 70: Shielded printed wiring board

圖1是一剖面圖,其示意性顯示本發明第1實施形態之電磁波屏蔽膜之剖面的一例。 圖2是一剖面圖,其示意性顯示本發明第1實施形態另一態樣之電磁波屏蔽膜之剖面的一例。 圖3是一剖面圖,其示意性顯示本發明第1實施形態之電磁波屏蔽膜之剖面的一例,上述電磁波屏蔽膜具有消光層及基材膜。 圖4A是一剖面圖,其示意性顯示將本發明第1實施形態之電磁波屏蔽膜貼附到印刷配線板之樣子的一例。 圖4B是一剖面圖,其示意性顯示使用有本發明第1實施形態之電磁波屏蔽膜之屏蔽印刷配線板之剖面的 例。 圖5是一步驟圖,其示意性顯示本發明第1實施形態之電磁波屏蔽膜之製造方法中消光層形成步驟的一例。 圖6是一步驟圖,其示意性顯示本發明第1實施形態之電磁波屏蔽膜之製造方法中保護層形成步驟的一例。 圖7是一步驟圖,其示意性顯示本發明第1實施形態之電磁波屏蔽膜之製造方法中金屬層形成步驟的一例。 圖8是一步驟圖,其示意性顯示本發明第1實施形態之電磁波屏蔽膜之製造方法中導電性接著劑層形成步驟的一例。 圖9A是一照片,其顯示在耐刮性評價中為評分6之基準之電磁波屏蔽膜之保護層的表面狀態。 圖9B是一照片,其顯示在耐刮性評價中為評分5之基準之電磁波屏蔽膜之保護層的表面狀態。 圖9C是一照片,其顯示在耐刮性評價中為評分4之基準之電磁波屏蔽膜之保護層的表面狀態。 圖9D是一照片,其顯示在耐刮性評價中為評分3之基準之電磁波屏蔽膜之保護層的表面狀態。 圖9E是一照片,其顯示在耐刮性評價中為評分2之基準之電磁波屏蔽膜之保護層的表面狀態。 圖9F是一照片,其顯示在耐刮性評價中為評分1之基準之電磁波屏蔽膜之保護層的表面狀態。 圖10A是在電磁波屏蔽膜之保護層第1主面之隱蔽性判定中為「優(◎)」之基準的保護層第1主面的相片。 圖10B是在電磁波屏蔽膜之保護層第1主面之隱蔽性判定中為「良(〇)」之基準的保護層表面的相片。 圖10C是在電磁波屏蔽膜之保護層第1主面之隱蔽性判定中為「可(△)」之基準的保護層第1主面的相片。 FIG. 1 is a cross-sectional view schematically showing an example of the cross-section of the electromagnetic wave shielding film according to the first embodiment of the present invention. FIG. 2 is a cross-sectional view schematically showing an example of the cross-section of the electromagnetic wave shielding film according to another aspect of the first embodiment of the present invention. 3 is a cross-sectional view schematically showing an example of the cross-section of the electromagnetic wave shielding film having a matting layer and a base film according to the first embodiment of the present invention. 4A is a cross-sectional view schematically showing an example of how the electromagnetic wave shielding film according to the first embodiment of the present invention is attached to a printed wiring board. 4B is a cross-sectional view schematically showing an example of a cross-section of a shielded printed wiring board using the electromagnetic wave shielding film according to the first embodiment of the present invention. FIG. 5 is a step diagram schematically showing an example of a matting layer forming step in the method for manufacturing an electromagnetic wave shielding film according to the first embodiment of the present invention. 6 is a step diagram schematically showing an example of a protective layer forming step in the method for manufacturing an electromagnetic wave shielding film according to the first embodiment of the present invention. 7 is a step diagram schematically showing an example of a metal layer forming step in the method for manufacturing an electromagnetic wave shielding film according to the first embodiment of the present invention. 8 is a step diagram schematically showing an example of a conductive adhesive layer forming step in the method for manufacturing an electromagnetic wave shielding film according to the first embodiment of the present invention. FIG. 9A is a photograph showing the surface state of the protective layer of the electromagnetic wave shielding film that is the basis for a score of 6 in the scratch resistance evaluation. FIG. 9B is a photograph showing the surface state of the protective layer of the electromagnetic wave shielding film that is the basis for a score of 5 in the scratch resistance evaluation. FIG. 9C is a photograph showing the surface state of the protective layer of the electromagnetic wave shielding film that is the basis for a score of 4 in the scratch resistance evaluation. FIG. 9D is a photograph showing the surface state of the protective layer of the electromagnetic wave shielding film that is the basis for a score of 3 in the scratch resistance evaluation. FIG. 9E is a photograph showing the surface state of the protective layer of the electromagnetic wave shielding film that is the basis for a score of 2 in the scratch resistance evaluation. FIG. 9F is a photograph showing the surface state of the protective layer of the electromagnetic wave shielding film that is the basis for a score of 1 in the scratch resistance evaluation. FIG. 10A is a photograph of the first main surface of the protective layer of the electromagnetic wave shielding film, which is the criterion of "excellent (◎)" in the concealment judgment of the first main surface of the protective layer of the electromagnetic wave shielding film. 10B is a photograph of the surface of the protective layer that is the criterion of "good (0)" in the concealment judgment of the first main surface of the protective layer of the electromagnetic wave shielding film. FIG. 10C is a photograph of the first main surface of the protective layer of the electromagnetic wave shielding film, which is the criterion of "acceptable (△)" in the concealment judgment of the first main surface of the protective layer of the electromagnetic wave shielding film.

1:電磁波屏蔽膜 1: Electromagnetic wave shielding film

10:保護層 10:Protective layer

10a:保護層之第1主面 10a: The first main surface of the protective layer

10b:保護層之第2主面 10b: The second main surface of the protective layer

11:保護層之凹凸 11: The unevenness of the protective layer

20:屏蔽層 20:Shielding layer

30:導電性接著劑層 30: Conductive adhesive layer

Claims (9)

一種電磁波屏蔽膜,特徵在於具備保護層與屏蔽層, 前述保護層具有第1主面及與前述第1主面呈對向之第2主面, 前述屏蔽層配置在前述保護層之第2主面,且 前述第1主面之界面展開面積比Sdr為75.0~250%。 An electromagnetic wave shielding film characterized by having a protective layer and a shielding layer, The aforementioned protective layer has a first main surface and a second main surface opposite to the aforementioned first main surface, The aforementioned shielding layer is arranged on the second main surface of the aforementioned protective layer, and The interface expansion area ratio Sdr of the first main surface is 75.0~250%. 一種電磁波屏蔽膜,特徵在於具備保護層與屏蔽層, 前述保護層具有第1主面及與前述第1主面呈對向之第2主面, 前述屏蔽層配置在前述保護層之第2主面,且 前述第1主面之均方根斜率Sdq為1.50~2.70。 An electromagnetic wave shielding film characterized by having a protective layer and a shielding layer, The aforementioned protective layer has a first main surface and a second main surface opposite to the aforementioned first main surface, The aforementioned shielding layer is arranged on the second main surface of the aforementioned protective layer, and The root mean square slope Sdq of the first main surface is 1.50~2.70. 如請求項1或2之電磁波屏蔽膜,其中前述第1主面之最小自相關長度Sal為2.5~10.0μm。For example, the electromagnetic wave shielding film of claim 1 or 2, wherein the minimum autocorrelation length Sal of the first main surface is 2.5~10.0 μm. 如請求項1或2之電磁波屏蔽膜,其中前述第1主面之算術平均高度Sa為0.3μm以上且小於0.8μm。The electromagnetic wave shielding film of claim 1 or 2, wherein the arithmetic mean height Sa of the first main surface is 0.3 μm or more and less than 0.8 μm. 如請求項1或2之電磁波屏蔽膜,其中前述第1主面之60°光澤度為5.0以下。The electromagnetic wave shielding film of claim 1 or 2, wherein the 60° glossiness of the first main surface is 5.0 or less. 如請求項1或2之電磁波屏蔽膜,其中前述第1主面之85°光澤度為60.0以下。The electromagnetic wave shielding film of claim 1 or 2, wherein the 85° glossiness of the first main surface is 60.0 or less. 如請求項1或2之電磁波屏蔽膜,其中前述屏蔽層是由金屬層構成,且 在前述金屬層之與前述保護層相接之主面的相反側主面配置有導電性接著劑層。 The electromagnetic wave shielding film of claim 1 or 2, wherein the aforementioned shielding layer is composed of a metal layer, and A conductive adhesive layer is disposed on the main surface of the metal layer opposite to the main surface in contact with the protective layer. 如請求項1或2之電磁波屏蔽膜,其中前述屏蔽層是由導電性接著劑層構成。The electromagnetic wave shielding film of claim 1 or 2, wherein the shielding layer is composed of a conductive adhesive layer. 如請求項1或2之電磁波屏蔽膜,其中在前述保護層之前述第1主面進一步配置有消光層,在前述消光層之與前述保護層相接之主面的相反側主面配置有基材膜。The electromagnetic wave shielding film of claim 1 or 2, wherein a matting layer is further disposed on the first main surface in front of the protective layer, and a base is disposed on the main surface opposite to the main surface of the matting layer that is in contact with the protective layer. Material film.
TW112112320A 2022-06-28 2023-03-30 Electromagnetic shielding film TW202402154A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-103554 2022-06-28
JP2022103554 2022-06-28

Publications (1)

Publication Number Publication Date
TW202402154A true TW202402154A (en) 2024-01-01

Family

ID=89383092

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112112320A TW202402154A (en) 2022-06-28 2023-03-30 Electromagnetic shielding film

Country Status (2)

Country Link
TW (1) TW202402154A (en)
WO (1) WO2024004991A1 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017138638A1 (en) * 2016-02-12 2017-08-17 タツタ電線株式会社 Electromagnetic-wave shield film
JP6426865B1 (en) * 2018-02-20 2018-11-21 タツタ電線株式会社 Electromagnetic shielding film
KR102400969B1 (en) * 2018-12-18 2022-05-24 토요잉크Sc홀딩스주식회사 Electronic component mounting board and electronic device
JP7452230B2 (en) * 2020-04-30 2024-03-19 artience株式会社 Electromagnetic shielding sheet, printed wiring board and manufacturing method thereof

Also Published As

Publication number Publication date
WO2024004991A1 (en) 2024-01-04

Similar Documents

Publication Publication Date Title
KR101956091B1 (en) Electromagnetic wave shielding film
KR102567422B1 (en) Electromagnetic wave shield film
CN110022640B (en) Electromagnetic wave shielding film
JP6426865B1 (en) Electromagnetic shielding film
JP6722370B2 (en) Adhesive film for printed wiring boards
TWI768219B (en) Adhesive film for printed wiring board
JP2018011085A (en) Electromagnetic wave shield film
JP7410182B2 (en) shape transfer film
JP2019125618A (en) Electromagnetic wave shield film
JP6978994B2 (en) Transfer film
CN110305603B (en) Conductive adhesive layer
TW202402154A (en) Electromagnetic shielding film
WO2020095919A1 (en) Electromagnetic shielding film, method for manufacturing electromagnetic shielding film, and method for manufacturing shielded printed wiring board
JP7265968B2 (en) Electromagnetic wave shielding film manufacturing method, electromagnetic wave shielding film and circuit board
KR20190114890A (en) Electromagnetic wave shield film, shield printed circuit board and method for manufacturing shield printed circuit
WO2023106247A1 (en) Transfer film and electromagnetic wave shield film provided with transfer film
JP2021052083A (en) Electromagnetic wave-shield film and circuit board
JP7228330B2 (en) Electromagnetic wave shielding film and printed wiring board with electromagnetic wave shielding film