TW202400821A - 雷射放電設備及在雷射放電腔中之電極上形成保護層之方法 - Google Patents
雷射放電設備及在雷射放電腔中之電極上形成保護層之方法 Download PDFInfo
- Publication number
- TW202400821A TW202400821A TW112106915A TW112106915A TW202400821A TW 202400821 A TW202400821 A TW 202400821A TW 112106915 A TW112106915 A TW 112106915A TW 112106915 A TW112106915 A TW 112106915A TW 202400821 A TW202400821 A TW 202400821A
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- protective layer
- laser
- layer
- chamber
- Prior art date
Links
- 239000011241 protective layer Substances 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title abstract description 40
- 238000004891 communication Methods 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 9
- 239000007789 gas Substances 0.000 description 80
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 29
- 239000001301 oxygen Substances 0.000 description 29
- 229910052760 oxygen Inorganic materials 0.000 description 29
- 239000010410 layer Substances 0.000 description 21
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 20
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 18
- 229910001369 Brass Inorganic materials 0.000 description 17
- 239000010951 brass Substances 0.000 description 17
- 210000002381 plasma Anatomy 0.000 description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 239000002184 metal Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000001272 nitrous oxide Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000003628 erosive effect Effects 0.000 description 8
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- 238000011065 in-situ storage Methods 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 230000003321 amplification Effects 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000003682 fluorination reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- AKJVMGQSGCSQBU-UHFFFAOYSA-N zinc azanidylidenezinc Chemical compound [Zn++].[N-]=[Zn].[N-]=[Zn] AKJVMGQSGCSQBU-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- -1 copper nitride Chemical class 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 241000699670 Mus sp. Species 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical compound [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- DOIHHHHNLGDDRE-UHFFFAOYSA-N azanide;copper;copper(1+) Chemical compound [NH2-].[Cu].[Cu].[Cu+] DOIHHHHNLGDDRE-UHFFFAOYSA-N 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2308—Amplifier arrangements, e.g. MOPA
- H01S3/2316—Cascaded amplifiers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/087—Oxides of copper or solid solutions thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0676—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70025—Production of exposure light, i.e. light sources by lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/038—Electrodes, e.g. special shape, configuration or composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/038—Electrodes, e.g. special shape, configuration or composition
- H01S3/0388—Compositions, materials or coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
- H01S3/0971—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser transversely excited
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2308—Amplifier arrangements, e.g. MOPA
- H01S3/2325—Multi-pass amplifiers, e.g. regenerative amplifiers
- H01S3/2333—Double-pass amplifiers
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Lasers (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962845926P | 2019-05-10 | 2019-05-10 | |
| US62/845,926 | 2019-05-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202400821A true TW202400821A (zh) | 2024-01-01 |
Family
ID=70857260
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112106915A TW202400821A (zh) | 2019-05-10 | 2020-05-06 | 雷射放電設備及在雷射放電腔中之電極上形成保護層之方法 |
| TW109115101A TW202108791A (zh) | 2019-05-10 | 2020-05-06 | 長壽命雷射腔電極 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109115101A TW202108791A (zh) | 2019-05-10 | 2020-05-06 | 長壽命雷射腔電極 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7369205B2 (ja) |
| CN (1) | CN113875101A (ja) |
| TW (2) | TW202400821A (ja) |
| WO (1) | WO2020231746A1 (ja) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023048931A1 (en) * | 2021-09-23 | 2023-03-30 | Cymer, Llc | Electrode with engineered surface for improved energy performance |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH066520Y2 (ja) * | 1987-10-05 | 1994-02-16 | 日本電気株式会社 | イオンレーザ管 |
| US5307364A (en) * | 1993-05-24 | 1994-04-26 | Spectra Gases, Inc. | Addition of oxygen to a gas mix for use in an excimer laser |
| JP3782151B2 (ja) * | 1996-03-06 | 2006-06-07 | キヤノン株式会社 | エキシマレーザー発振装置のガス供給装置 |
| US6014398A (en) * | 1997-10-10 | 2000-01-11 | Cymer, Inc. | Narrow band excimer laser with gas additive |
| JP3894399B2 (ja) | 1998-10-07 | 2007-03-22 | 株式会社小松製作所 | ＡｒＦエキシマレーザの添加ガス給排気装置 |
| US6381257B1 (en) * | 1999-09-27 | 2002-04-30 | Cymer, Inc. | Very narrow band injection seeded F2 lithography laser |
| JP2001244523A (ja) * | 2000-02-28 | 2001-09-07 | Nidek Co Ltd | エキシマレーザ装置 |
| US6644324B1 (en) * | 2000-03-06 | 2003-11-11 | Cymer, Inc. | Laser discharge chamber passivation by plasma |
| JP4367886B2 (ja) | 2000-03-15 | 2009-11-18 | 株式会社小松製作所 | ガスレーザ装置 |
| JP3875451B2 (ja) | 2000-03-24 | 2007-01-31 | 株式会社東芝 | エキシマレーザー装置、露光装置および半導体装置の製造方法 |
| US6711202B2 (en) | 2000-06-09 | 2004-03-23 | Cymer, Inc. | Discharge laser with porous insulating layer covering anode discharge surface |
| US6690706B2 (en) | 2000-06-09 | 2004-02-10 | Cymer, Inc. | High rep-rate laser with improved electrodes |
| JP2002008895A (ja) | 2000-06-27 | 2002-01-11 | Matsushita Electric Works Ltd | プラズマ処理装置及びプラズマ処理方法 |
| US7230965B2 (en) | 2001-02-01 | 2007-06-12 | Cymer, Inc. | Anodes for fluorine gas discharge lasers |
| US20020122449A1 (en) * | 2001-03-02 | 2002-09-05 | Satoshi Tanaka | Gas laser apparatus for lithography |
| US7301980B2 (en) | 2002-03-22 | 2007-11-27 | Cymer, Inc. | Halogen gas discharge laser electrodes |
| JP4059758B2 (ja) | 2002-11-26 | 2008-03-12 | 株式会社小松製作所 | レーザ装置用主放電電極の製造方法 |
| JP2005340363A (ja) * | 2004-05-25 | 2005-12-08 | Kyushu Univ | ＡｒＦエキシマレーザ装置 |
| JP2006013232A (ja) * | 2004-06-28 | 2006-01-12 | Komatsu Ltd | 紫外ガスレーザ装置のレーザチャンバ再生処理方法 |
| KR101074389B1 (ko) | 2004-11-05 | 2011-10-17 | 엘지디스플레이 주식회사 | 박막 식각 방법 및 이를 이용한 액정표시장치의 제조방법 |
| CN2826766Y (zh) * | 2005-09-15 | 2006-10-11 | 吴达文 | 金属结构射频激励气体激光结构 |
| JP2010020285A (ja) | 2008-03-28 | 2010-01-28 | Panasonic Corp | レーザ光源、画像表示装置、及び加工装置 |
| US9246298B2 (en) * | 2012-06-07 | 2016-01-26 | Cymer, Llc | Corrosion resistant electrodes for laser chambers |
| US9130337B1 (en) * | 2014-09-10 | 2015-09-08 | Cymer, Llc | System and method for automatic gas optimization in a two-chamber gas discharge laser system |
| US10466572B2 (en) | 2017-03-24 | 2019-11-05 | Zhuhai Crystal Resonance Technologies Co., Ltd. | Method of fabrication for single crystal piezoelectric RF resonators and filters |
-
2020
- 2020-05-06 TW TW112106915A patent/TW202400821A/zh unknown
- 2020-05-06 TW TW109115101A patent/TW202108791A/zh unknown
- 2020-05-07 CN CN202080034713.3A patent/CN113875101A/zh active Pending
- 2020-05-07 JP JP2021562913A patent/JP7369205B2/ja active Active
- 2020-05-07 WO PCT/US2020/031906 patent/WO2020231746A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020231746A1 (en) | 2020-11-19 |
| JP2022533528A (ja) | 2022-07-25 |
| CN113875101A (zh) | 2021-12-31 |
| TW202108791A (zh) | 2021-03-01 |
| JP7369205B2 (ja) | 2023-10-25 |
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