TW202346204A - 氮化矽粉末及其製造方法、以及氮化矽燒結體及其製造方法 - Google Patents

氮化矽粉末及其製造方法、以及氮化矽燒結體及其製造方法 Download PDF

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TW202346204A
TW202346204A TW112110817A TW112110817A TW202346204A TW 202346204 A TW202346204 A TW 202346204A TW 112110817 A TW112110817 A TW 112110817A TW 112110817 A TW112110817 A TW 112110817A TW 202346204 A TW202346204 A TW 202346204A
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silicon nitride
powder
mass ratio
carbon
nitride powder
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TW112110817A
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Chinese (zh)
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中村祐三
宮下敏行
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日商電化股份有限公司
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TW112110817A 2022-03-31 2023-03-23 氮化矽粉末及其製造方法、以及氮化矽燒結體及其製造方法 TW202346204A (zh)

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JP2022-060115 2022-03-31

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US (1) US20250282688A1 (https=)
EP (1) EP4477633A4 (https=)
JP (1) JP7437570B1 (https=)
CN (1) CN118922396A (https=)
TW (1) TW202346204A (https=)
WO (1) WO2023189539A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025206127A1 (ja) * 2024-03-28 2025-10-02 Ｕｂｅ株式会社 結晶質窒化ケイ素粉末、窒化ケイ素質焼結体および窒化ケイ素質焼結体の製造方法
JP2025154728A (ja) * 2024-03-29 2025-10-10 デンカ株式会社 窒化ケイ素粉末、及びその製造方法
JP2025156828A (ja) * 2024-04-02 2025-10-15 デンカ株式会社 窒化ケイ素粉末
JP2025156831A (ja) * 2024-04-02 2025-10-15 デンカ株式会社 窒化ケイ素粉末
WO2025258653A1 (ja) * 2024-06-13 2025-12-18 Ｕｂｅ株式会社 結晶質窒化ケイ素粉末、該粉末を含む窒化ケイ素焼結体、窒化ケイ素焼結体の製造方法、該焼結体を含む物品、および車両

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63162511A (ja) * 1986-12-26 1988-07-06 Toshiba Ceramics Co Ltd 窒化ケイ素の製造方法
JPS63319264A (ja) * 1987-06-23 1988-12-27 Toshiba Corp 高強度低比重窒化ケイ素焼結体
JP2946916B2 (ja) 1992-01-24 1999-09-13 住友電気工業株式会社 窒化ケイ素粉末およびその製造方法
JP4089974B2 (ja) 2004-04-27 2008-05-28 日立金属株式会社 窒化ケイ素質粉末、窒化ケイ素質焼結体及びこれを用いた電子部品用回路基板
EP1914213B1 (en) * 2005-08-11 2016-04-13 Denka Company Limited Silicon nitride circuit board
JP2007189112A (ja) * 2006-01-16 2007-07-26 Denki Kagaku Kogyo Kk 窒化珪素基板およびそれを用いた回路基板、モジュール。

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WO2023189539A1 (ja) 2023-10-05
JP7437570B1 (ja) 2024-02-22
JPWO2023189539A1 (https=) 2023-10-05
US20250282688A1 (en) 2025-09-11
EP4477633A4 (en) 2025-10-01
CN118922396A (zh) 2024-11-08

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