TW202345985A - Gas injection unit and apparatus for treating substrate - Google Patents
Gas injection unit and apparatus for treating substrate Download PDFInfo
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- TW202345985A TW202345985A TW112103164A TW112103164A TW202345985A TW 202345985 A TW202345985 A TW 202345985A TW 112103164 A TW112103164 A TW 112103164A TW 112103164 A TW112103164 A TW 112103164A TW 202345985 A TW202345985 A TW 202345985A
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- 238000002347 injection Methods 0.000 title claims abstract description 445
- 239000007924 injection Substances 0.000 title claims abstract description 445
- 239000000758 substrate Substances 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 claims description 34
- 230000008569 process Effects 0.000 claims description 32
- 230000032258 transport Effects 0.000 claims description 11
- 238000007789 sealing Methods 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000033001 locomotion Effects 0.000 description 6
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
- B08B5/023—Cleaning travelling work
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/005—Nozzles or other outlets specially adapted for discharging one or more gases
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/02—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape
- B05B1/04—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape in flat form, e.g. fan-like, sheet-like
- B05B1/044—Slits, i.e. narrow openings defined by two straight and parallel lips; Elongated outlets for producing very wide discharges, e.g. fluid curtains
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/30—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to control volume of flow, e.g. with adjustable passages
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
- F26B21/004—Nozzle assemblies; Air knives; Air distributors; Blow boxes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
本發明涉及氣體噴射單元和包括該氣體噴射單元的基板處理裝置。The present invention relates to a gas injection unit and a substrate processing apparatus including the gas injection unit.
通常在半導體製造製程中,通過微影製程、蝕刻製程、沉積製程、金屬製程、電性晶片分揀(Electrical die sorting, EDS)製程、封裝製程等製程來製造基板。在這種製程中,根據需要,可以在製程前後進行用於去除附著在基板上的顆粒或有機物等雜質的清洗製程、以及在這種清洗製程之後去除殘留在基板上的液體的乾燥製程。例如,在封裝製程中,通過切割和分類製程被單片化為多個半導體封裝件的基板在進行清洗和乾燥製程後,通過檢查可以分類為良品或不良品。Usually in the semiconductor manufacturing process, substrates are manufactured through processes such as lithography process, etching process, deposition process, metal process, electrical die sorting (EDS) process, and packaging process. In this process, if necessary, a cleaning process to remove impurities such as particles or organic matter attached to the substrate may be performed before and after the process, and a drying process may be performed to remove liquid remaining on the substrate after the cleaning process. For example, in the packaging process, a substrate that is singulated into multiple semiconductor packages through a cutting and sorting process can be classified as a good product or a defective product through inspection after a cleaning and drying process.
在這種清洗或乾燥製程中,提供了一種用於噴射氣體的氣刀等氣體噴射單元,以對基板進行清洗或乾燥。In this cleaning or drying process, a gas injection unit such as an air knife for injecting gas is provided to clean or dry the substrate.
以往,這種氣體噴射單元的噴射氣體的氣體噴射口形成為狹縫形狀,並且為了控制氣體的吐出量,具備了調節這種氣體噴射單元的氣體噴射口的狹縫形狀的間隙大小的調節手段。但是,通過這種調節手段,雖然可以調節氣體噴射口的狹縫形狀的間隙大小,但是在均勻地調節狹縫形狀的間隙大小的工作中存在困難,因此存在各個區域的流速和流量不均勻,可能會發生流速和流量偏差等問題。Conventionally, the gas injection port of such a gas injection unit is formed in a slit shape, and in order to control the discharge amount of gas, an adjustment means is provided for adjusting the gap size of the slit shape of the gas injection port of such a gas injection unit. . However, although the slit-shaped gap size of the gas injection port can be adjusted by this adjustment method, it is difficult to uniformly adjust the slit-shaped gap size, so the flow rate and flow rate in each area are uneven. Problems such as flow rate and flow deviations may occur.
現有技術文獻existing technical documents
專利文獻patent documents
(專利文獻1)韓國專利號10-0762371(2007年09月20日)。(Patent Document 1) Korean Patent No. 10-0762371 (September 20, 2007).
要解決的技術問題Technical issues to be solved
本發明的目的在於,提供一種能夠調節氣體的流速和流量的氣體噴射單元和基板處理裝置。An object of the present invention is to provide a gas injection unit and a substrate processing apparatus capable of adjusting the flow rate and flow rate of gas.
解決問題的手段means of solving problems
為了實現上述目的,根據本發明一實施例,提供一種氣體噴射單元,包括:一殼體,包括一氣體流入口和一腔體,該腔體連接到該氣體流入口,並且在一個面上形成有一開口;以及一氣體噴射部,配置在該腔體內,構成為可以相對於該腔體改變成多種配置位置,並且具有一內部流路和彼此不同的多個氣體噴射孔部,該內部流路連接到該氣體流入口,該些氣體噴射孔部連接到該內部流路,並且根據該配置位置而配置成朝向該開口以噴射氣體。In order to achieve the above object, according to an embodiment of the present invention, a gas injection unit is provided, including: a housing, including a gas inlet and a cavity, the cavity is connected to the gas inlet and is formed on one surface There is an opening; and a gas injection part arranged in the cavity, configured to be changeable into a variety of configuration positions relative to the cavity, and having an internal flow path and a plurality of mutually different gas injection hole parts, the internal flow path Connected to the gas inlet, the gas injection hole portions are connected to the internal flow path, and are configured to inject gas toward the opening according to the arrangement position.
一實施例中,該氣體噴射部可以可拆卸地安裝在該腔體。In one embodiment, the gas injection part can be detachably installed in the cavity.
另外,該氣體噴射部可以包括多個氣體噴射壁,彼此不同的該些氣體噴射孔部配置在該些氣體噴射壁。In addition, the gas injection part may include a plurality of gas injection walls, and mutually different gas injection hole parts are arranged on the gas injection walls.
進一步地,該氣體噴射部的外輪廓截面形狀形成為多邊形形狀,每個氣體噴射壁由該氣體噴射部的每個側壁定義,該腔體可以形成為與該氣體噴射部的外輪廓截面形狀相對應的形狀。Further, the outer contour cross-sectional shape of the gas injection part is formed into a polygonal shape, each gas injection wall is defined by each side wall of the gas injection part, and the cavity may be formed to be similar to the outer contour cross-sectional shape of the gas injection part. corresponding shape.
另外,在每個氣體噴射壁可以配置有連接該氣體流入口和該內部流路的連接流路。In addition, each gas injection wall may be provided with a connection flow path that connects the gas inlet and the internal flow path.
一實施例中,該氣體噴射部的外輪廓截面形狀形成為正方形形狀,在每個氣體噴射壁配置有連接該氣體流入口和該內部流路的連接流路,該腔體在一個面上形成有該開口,並且形成為與該氣體噴射部的至少三個氣體噴射壁的外側表面相對應的矩形形狀,在該配置位置,該氣體噴射壁中的一個配置成朝向該開口,另外三個氣體噴射壁可以緊貼於該腔體的內壁面。In one embodiment, the outer contour cross-sectional shape of the gas injection part is formed into a square shape, each gas injection wall is provided with a connecting flow path connecting the gas inlet and the internal flow path, and the cavity is formed on one surface There is the opening, and is formed in a rectangular shape corresponding to the outer surface of at least three gas injection walls of the gas injection part. In the arrangement position, one of the gas injection walls is arranged toward the opening, and the other three gas injection walls are arranged facing the opening. The injection wall can be close to the inner wall of the cavity.
例如,該氣體流入口可以配置在該殼體的上部中心部分。For example, the gas inlet may be disposed at an upper central portion of the housing.
又例如,該氣體流入口可以分別配置在該殼體的兩端部。For another example, the gas inlets may be respectively disposed at both ends of the housing.
另外,本發明的氣體噴射單元可以包括一蓋體,該蓋體結合到該開口,並且形成有露出該氣體噴射孔部的吐出口。In addition, the gas injection unit of the present invention may include a cover coupled to the opening and formed with an outlet exposing the gas injection hole portion.
進一步地,該氣體噴射部形成有連接該氣體流入口和該內部流路的多個連接流路,該蓋體上可以配置有插入到該些連接流路中朝向該開口的連接流路中以進行密封的密封凸起。Further, the gas injection part is formed with a plurality of connection flow paths connecting the gas inlet and the internal flow path, and the cover can be configured with a connection flow path inserted into the connection flow path toward the opening among the connection flow paths. Sealing bump for sealing.
另外,每個該氣體噴射孔部可以包括分別以相同的孔徑和規定間隔配置的多個氣體噴射孔。In addition, each of the gas injection hole portions may include a plurality of gas injection holes arranged at the same hole diameter and at predetermined intervals.
具體地,該些氣體噴射孔部可以構成為,該氣體噴射孔的孔狀、孔徑、以及位於同一氣體噴射壁且彼此相鄰的氣體噴射孔之間的間隔中的至少一種彼此不同。Specifically, the gas injection hole portions may be configured such that at least one of a hole shape, a hole diameter, and an interval between gas injection holes located on the same gas injection wall and adjacent to each other is different from each other.
另一方面,根據本發明另一實施例,進一步提供一種氣體噴射單元,包括:一殼體,包括一氣體流入口和一腔體,該腔體連接到該氣體流入口,並且在一個面上形成有一開口;一氣體噴射部,配置在該腔體內,相對於該腔體可拆卸地配置成多種配置位置,並且外輪廓截面形狀形成為矩形形狀;以及一蓋體,覆蓋該開口,並且形成有露出該氣體噴射部的一氣體噴射孔部的吐出口,該氣體噴射部包括:一內部流路,連接到該氣體流入口;四個氣體噴射壁,由該氣體噴射部的每個側壁定義;彼此不同的多個該氣體噴射孔部,包括連接到該內部流路,且在該些氣體噴射壁中的每一個氣體噴射壁以規定間隔配置的多個氣體噴射孔,從而根據該配置位置配置為朝向該開口,以噴射氣體。On the other hand, according to another embodiment of the present invention, a gas injection unit is further provided, including: a housing including a gas inlet and a cavity, the cavity being connected to the gas inlet and on one surface An opening is formed; a gas injection part is disposed in the cavity, is detachably disposed in a variety of configuration positions relative to the cavity, and has an outer contour cross-sectional shape formed into a rectangular shape; and a cover covering the opening and forming There is an outlet exposing a gas injection hole portion of the gas injection portion. The gas injection portion includes: an internal flow path connected to the gas inlet; and four gas injection walls defined by each side wall of the gas injection portion. ; The plurality of gas injection hole portions that are different from each other include a plurality of gas injection holes connected to the internal flow path and arranged at predetermined intervals in each of the gas injection walls, so that according to the arrangement position is configured to inject gas toward the opening.
又一方面,根據本發明又一實施例,還提供一種基板處理裝置,包括:一工藝腔體,其中配置有輸送一基板的一輸送單元;以及一氣體噴射單元,配置在該工藝腔體內,並且向該基板噴射氣體,該氣體噴射單元包括:一殼體,包括一氣體流入口和一腔體,該腔體連接到該氣體流入口,並且在一個面上形成有一開口;以及一氣體噴射部,配置在該腔體內,構成為可以相對於該腔體改變成多種配置位置,並且具有一內部流路和彼此不同的多個氣體噴射孔部,該內部流路連接到該氣體流入口,該些氣體噴射孔部連接到該內部流路,並且根據該配置位置而配置成朝向該開口以噴射氣體。On the other hand, according to another embodiment of the present invention, a substrate processing device is also provided, including: a process chamber, in which a transport unit is configured to transport a substrate; and a gas injection unit is configured in the process chamber, And injecting gas to the substrate, the gas injection unit includes: a housing including a gas inlet and a cavity, the cavity is connected to the gas inlet and has an opening formed on one surface; and a gas injection a portion arranged in the cavity, configured to be changeable into a variety of configuration positions relative to the cavity, and having an internal flow path and a plurality of mutually different gas injection hole portions, the internal flow path being connected to the gas inlet, The gas injection hole portions are connected to the internal flow path, and are configured to inject gas toward the opening according to the arrangement position.
發明的效果Effect of the invention
根據本發明實施例的氣體噴射單元和基板處理裝置的構成,通過這種氣體噴射孔部的構成,可以增加氣體的運動量傳遞效果,並且當用於清洗製程時,可以增加清洗面積,進而有利於減少氣體噴射部的整體流量偏差,進一步地,由於具有多種類型的氣體噴射孔部,因此無需設置適用於以往使用的狹縫形狀的噴射結構的用於調節間隙間隔的單獨的調節裝置,可以製作成簡單的結構,並且可以根據需要選用期望的氣體噴射孔部,從而可以實現氣體的流量和流速的調節。According to the composition of the gas injection unit and the substrate processing device according to the embodiment of the present invention, through the composition of the gas injection hole, the movement amount transfer effect of the gas can be increased, and when used in the cleaning process, the cleaning area can be increased, which is beneficial The overall flow rate deviation of the gas injection part is reduced. Furthermore, since there are various types of gas injection hole parts, there is no need to install a separate adjustment device for adjusting the gap interval suitable for the slit-shaped injection structure used in the past, and it can be produced It has a simple structure, and the desired gas injection hole can be selected as needed, so that the gas flow rate and flow rate can be adjusted.
以下,參照附圖詳細說明本發明的較佳實施例,以便發明所屬技術領域通常知識者能夠容易地實施本發明。但是,在詳細說明本發明的較佳實施例時,如果認為相關的習知功能或構成的具體說明會不必要的模糊本發明的要旨,則省略其詳細說明。另外,對於具有類似功能和作用的部分,在整個附圖中使用相同的符號。在本說明書中,“上部”、“上表面”、“上部表面”、“上側”、“下部”、“下表面”、“底面”、“下部表面”、“下側”、“內”、“外”等用語是以該構成要素的“上部”、“上表面”、“上部表面”、“上側”、“下部”、“下表面”、“底面”、“下部表面”、“下側”、“內”、“外”等為基準,實際上根據構成要素配置的方向會有所不同。Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art can easily implement the present invention. However, when describing the preferred embodiments of the present invention in detail, if it is believed that detailed description of related conventional functions or structures will unnecessarily obscure the gist of the present invention, the detailed description will be omitted. In addition, for parts with similar functions and effects, the same symbols are used throughout the drawings. In this specification, "upper", "upper surface", "upper surface", "upper side", "lower part", "lower surface", "bottom", "lower surface", "lower side", "inner", Terms such as "outside" are used to refer to the "upper part", "upper surface", "upper surface", "upper side", "lower part", "lower surface", "bottom surface", "lower surface" and "lower side" of the component. ", "inside", "outside", etc. are used as the basis. In fact, the direction in which the constituent elements are arranged will differ.
另外,在整個說明書中,當某個部分與另一部分“連接”時,這不僅包括“直接連接”的情況,還包括中間隔著其他構成要素“間接連接”的情況。此外,除非另有相反的描述,否則“包括”某些構成要素意味著可能還包括其他構成要素,而不是排除其他構成要素。In addition, throughout this specification, when one part is "connected" to another part, this includes not only the case of "direct connection" but also the case of "indirect connection" with other components interposed therebetween. In addition, unless otherwise described to the contrary, "including" certain elements means that other elements may also be included, not the exclusion of other elements.
下面參照附圖詳細說明本發明的實施例。The embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
圖1a和圖1b是分別示出本發明的不同實施例的基板處理裝置的示例圖。1a and 1b are exemplary diagrams respectively illustrating a substrate processing apparatus according to different embodiments of the present invention.
參照圖1a和圖1b,本發明的基板處理裝置是用於處理基板的裝置,可以是用於在基板製造過程中處理基板的各種工藝處理裝置,例如,可以是基板清洗裝置、基板乾燥裝置等。另外,又例如,本發明的基板處理裝置也可以應用於切割和檢查裝置。作為在這種基板處理裝置中輸送基板的方式,不僅在利用後述的輥進行輸送,而且在通過吸附板吸附輸送基板的過程中,也可以利用本發明的氣體噴射單元噴射氣體。Referring to Figures 1a and 1b, the substrate processing device of the present invention is a device for processing substrates. It can be various process processing devices for processing substrates in the substrate manufacturing process. For example, it can be a substrate cleaning device, a substrate drying device, etc. . In addition, for another example, the substrate processing device of the present invention can also be applied to a cutting and inspection device. As a method of transporting the substrate in such a substrate processing apparatus, not only the rollers described below are used to transport the substrate, but also the gas injection unit of the present invention may be used to inject gas during the process of adsorbing and transporting the substrate by an adsorption plate.
這種基板處理裝置10包括工藝腔體100和氣體噴射單元200。This substrate processing apparatus 10 includes a process chamber 100 and a gas injection unit 200 .
工藝腔體100中配置有沿著輸送方向從搬入口110向搬出口120輸送基板S的輸送單元300。在這種工藝腔體100的下部還可以配置有用於排出工藝處理液的排液口130。The process chamber 100 is provided with a transport unit 300 that transports the substrate S from the import port 110 to the transport port 120 along the transport direction. The lower part of the process chamber 100 may also be provided with a drain port 130 for discharging the process liquid.
輸送單元300可以包括沿著該輸送方向配置的多個旋轉軸310、配置在該旋轉軸310上的多個輥件320、以及連接到該旋轉軸310以驅動該旋轉軸310旋轉的驅動部(未示出)。The conveying unit 300 may include a plurality of rotating shafts 310 arranged along the conveying direction, a plurality of rollers 320 arranged on the rotating shaft 310, and a driving part connected to the rotating shaft 310 to drive the rotating shaft 310 to rotate ( not shown).
這種多個旋轉軸310在工藝腔體100內可以在水平方向上以規定間隔隔開設置。這種旋轉軸310的長度根據輸送的基板S的大小來決定,當輸送具有大尺寸的基板S時,可以適用長度較長的長軸的旋轉軸310。Such plurality of rotation shafts 310 may be arranged at predetermined intervals in the horizontal direction within the process chamber 100 . The length of the rotation shaft 310 is determined according to the size of the substrate S to be conveyed. When conveying a large-sized substrate S, a rotation shaft 310 with a longer major axis may be used.
在每個旋轉軸310上可以以規定間隔設置有多個輥件320,該些輥件320支撐基板S並且沿規定方向旋轉以輸送基板S。A plurality of rollers 320 may be provided at predetermined intervals on each rotation shaft 310. The rollers 320 support the substrate S and rotate in a predetermined direction to transport the substrate S.
如圖1a所示,在位於具有這種構成的輸送單元300的輥件320上的基板S的上部設置有氣體噴射單元200,該氣體噴射單元200向輸送的基板S的上部表面噴射氣體。As shown in FIG. 1a , a gas injection unit 200 is provided above the substrate S on the roller 320 of the conveyance unit 300 having this structure, and the gas injection unit 200 injects gas onto the upper surface of the conveyed substrate S.
另外,在另一實施例中,如圖1b所示,在位於輸送單元300的輥件320上的基板S的上部和下部設置有分別向輸送的基板S的上部表面和下部表面噴射氣體的兩個氣體噴射單元200,該兩個氣體噴射單元200彼此相對。In addition, in another embodiment, as shown in FIG. 1 b , two devices that inject gas respectively to the upper and lower surfaces of the substrate S are provided on the upper and lower parts of the substrate S located on the roller 320 of the transport unit 300 . There are two gas injection units 200, and the two gas injection units 200 are opposite to each other.
氣體噴射單元200可以形成為具有足夠的長度以向輸送的基板S供應足夠的氣體。The gas injection unit 200 may be formed to have a sufficient length to supply sufficient gas to the conveyed substrate S.
以下,參照附圖具體說明本發明的氣體噴射單元200。Hereinafter, the gas injection unit 200 of the present invention will be described in detail with reference to the drawings.
圖2是本發明一實施例的氣體噴射單元的分解圖,圖3是從圖2的側面觀察的氣體噴射單元的分解圖,圖4是本發明一實施例的氣體噴射單元的主視圖,圖5a和圖5b是分別沿圖4的A-A'線和B-B'線剖切的剖視圖,圖6a和圖6b是示出本發明一實施例的氣體噴射單元的氣體噴射部中相鄰的兩個氣體噴射壁的圖。Figure 2 is an exploded view of the gas injection unit according to one embodiment of the present invention. Figure 3 is an exploded view of the gas injection unit viewed from the side of Figure 2. Figure 4 is a front view of the gas injection unit according to one embodiment of the present invention. Figure 5a and 5b are cross-sectional views taken along lines AA′ and BB′ of FIG. 4 respectively. FIGS. 6a and 6b illustrate adjacent parts of the gas injection part of the gas injection unit according to an embodiment of the present invention. Diagram of two gas jet walls.
參照圖2,本發明一實施例的氣體噴射單元200配置在基板處理裝置10的工藝腔體100內,用於向基板S噴射氣體,具體包括殼體210和配置在殼體210的腔體211內的氣體噴射部220。Referring to FIG. 2 , a gas injection unit 200 according to an embodiment of the present invention is disposed in the process chamber 100 of the substrate processing apparatus 10 and is used to inject gas to the substrate S. Specifically, it includes a casing 210 and a cavity 211 disposed in the casing 210 . The gas injection part 220 inside.
該殼體210包括腔體211。The housing 210 includes a cavity 211 .
在殼體210的腔體211形成有氣體流入口212,該氣體流入口212連接到供應氣體的供應管線,使氣體流入腔體211內。這種腔體211連接到氣體流入口212,並且在一個面上形成有開口213,使得後述的氣體噴射部220的氣體噴射孔部221可以通過腔體211的開口213露出。因此,從供應管線供應的氣體可以通過形成在殼體210的腔體211的氣體流入口212流動到氣體噴射部220,從而通過氣體噴射孔部221噴射氣體。A gas inlet 212 is formed in the cavity 211 of the housing 210 . The gas inlet 212 is connected to a supply line that supplies gas, so that the gas flows into the cavity 211 . This cavity 211 is connected to the gas inlet 212 and has an opening 213 formed on one surface so that the gas injection hole portion 221 of the gas injection portion 220 described later can be exposed through the opening 213 of the cavity 211 . Therefore, the gas supplied from the supply line can flow to the gas injection part 220 through the gas inflow port 212 formed in the cavity 211 of the housing 210, thereby injecting the gas through the gas injection hole part 221.
這種氣體流入口212可以配置在殼體210的各種位置。This gas inlet 212 can be arranged at various positions of the housing 210 .
例如,如圖2所示,氣體流入口212可以配置在殼體210的上部中心部分。因此,從供應管線供應的氣體通過殼體210的氣體流入口212流動到配置在腔體211內的氣體噴射部220的兩側,從而可以通過設置在氣體噴射部220的氣體噴射孔部221噴射氣體,從而有利於減小氣體噴射部220的整體流量偏差。For example, as shown in FIG. 2 , the gas inlet 212 may be disposed at the upper center portion of the housing 210 . Therefore, the gas supplied from the supply line flows to both sides of the gas injection part 220 arranged in the cavity 211 through the gas inlet 212 of the housing 210, and can be injected through the gas injection hole part 221 provided in the gas injection part 220 gas, thus helping to reduce the overall flow deviation of the gas injection part 220.
氣體噴射部220配置在殼體210的腔體211內,並且構成為可以相對於該腔體211改變成多種配置位置。這種氣體噴射部220具有內部流路222和氣體噴射孔部221。The gas injection unit 220 is arranged in the cavity 211 of the housing 210 and is configured to be changeable into various arrangement positions relative to the cavity 211 . This gas injection part 220 has an internal flow path 222 and a gas injection hole part 221.
氣體噴射部220的內部流路222連接到殼體210的氣體流入口212,並且連接到氣體噴射孔部221。The internal flow path 222 of the gas injection part 220 is connected to the gas inflow port 212 of the housing 210 and is connected to the gas injection hole part 221.
氣體噴射孔部221可以由彼此不同的多個氣體噴射孔部構成。換句話說,氣體噴射孔部221可以由根據氣體噴射部220相對於殼體210的腔體211的配置位置而配置成朝向腔體211的開口213以噴射氣體的彼此不同的多個氣體噴射孔部構成。The gas injection hole portion 221 may be composed of a plurality of mutually different gas injection hole portions. In other words, the gas injection hole part 221 may be composed of a plurality of mutually different gas injection holes arranged toward the opening 213 of the cavity 211 to inject gas according to the arrangement position of the gas injection part 220 relative to the cavity 211 of the housing 210 Department composition.
這裡,氣體噴射部構成為可以相對於殼體的腔體改變成多種配置位置是指,氣體噴射部相對於殼體的腔體可以位於多種配置位置,並且在每個配置位置,氣體噴射部的氣體噴射孔部設置為朝向腔體的開口,從而可以噴射氣體,也可以實現為當氣體噴射部進行位置變更時,在殼體的腔體內進行位置變更的構成,另外,也可以實現為以可拆卸地配置在該殼體的腔體的方式在殼體的腔體外部進行位置變更後再安裝到腔體內的構成,本發明對此沒有特殊限定。Here, the gas injection part is configured to be changeable into a plurality of configuration positions relative to the cavity of the housing. This means that the gas injection part can be located in a variety of configuration positions relative to the cavity of the housing, and in each configuration position, the gas injection part The gas injection hole portion is provided as an opening toward the cavity so that gas can be injected. When the position of the gas injection portion is changed, the position of the gas injection hole portion is changed within the cavity of the housing. Alternatively, the gas injection hole portion can be configured to change the position of the gas injection hole portion in the cavity of the housing. The present invention has no particular limitation on the configuration of being detachably arranged in the cavity of the housing and then reinstalling it into the cavity after the position is changed outside the cavity of the housing.
例如,如圖所示,在本發明中,具體說明氣體噴射部220可拆卸地安裝在殼體210的腔體211的結構。For example, as shown in the figure, in the present invention, a structure in which the gas injection part 220 is detachably installed in the cavity 211 of the housing 210 is specifically described.
在這種情況下,對氣體噴射部220和殼體之間的結合結構沒有特殊限定,可以應用以螺栓結合方式、配合結合方式等各種方式結合的結構。In this case, the coupling structure between the gas injection part 220 and the housing is not particularly limited, and various coupling structures such as bolt coupling and fitting coupling may be applied.
進一步地,氣體噴射部220可以包括多個氣體噴射壁223。在每個氣體噴射壁223可以配置有連接氣體流入口212和內部流路222的連接流路224。在這種多個氣體噴射壁223可以配置有彼此不同的該些氣體噴射孔部221。每個氣體噴射孔部221可以包括分別以相同的孔徑和規定間隔配置的多個氣體噴射孔225。因此,在氣體的噴射過程中,可以有效地確保均勻的流速和流量。Further, the gas injection part 220 may include a plurality of gas injection walls 223. Each gas injection wall 223 may be provided with a connection flow path 224 that connects the gas inlet 212 and the internal flow path 222 . The plurality of gas injection walls 223 may be provided with mutually different gas injection hole portions 221 . Each gas injection hole portion 221 may include a plurality of gas injection holes 225 arranged at the same hole diameter and at predetermined intervals. Therefore, uniform flow rate and flow rate can be effectively ensured during the injection process of gas.
例如,氣體噴射孔部221包括四個氣體噴射孔組,四個氣體噴射孔組形成為多個噴射孔沿著氣體噴射部的延伸方向隔開配置。For example, the gas injection hole portion 221 includes four gas injection hole groups, and the four gas injection hole groups are formed such that a plurality of injection holes are spaced apart along the extending direction of the gas injection portion.
進一步地,這種彼此不同的多個氣體噴射孔部221可以構成為,多個氣體噴射孔部221的該氣體噴射孔225的孔狀、孔徑、以及位於同一氣體噴射壁223且彼此相鄰的氣體噴射孔225之間的間隔中的至少一種彼此不同。這裡,彼此相鄰的氣體噴射孔225之間的間隔是指彼此相鄰的氣體噴射孔225的中心之間的間隔。Furthermore, the plurality of mutually different gas injection hole portions 221 may be configured such that the hole shapes, hole diameters, and holes of the gas injection holes 225 of the plurality of gas injection hole portions 221 are located on the same gas injection wall 223 and adjacent to each other. At least one of the intervals between the gas injection holes 225 is different from each other. Here, the interval between the adjacent gas injection holes 225 refers to the interval between the centers of the adjacent gas injection holes 225 .
但是,本發明不限於此,進一步地,除了氣體噴射孔的孔狀、孔徑、以及位於同一氣體噴射壁且彼此相鄰的氣體噴射孔之間的間隔外,彼此不同的多個噴射孔部當然也可以根據需要不同地構成配置在氣體噴射壁的氣體噴射孔的噴射角度或噴射方向上的孔的直線形狀、曲線形狀、孔的形狀等各種其他要素。However, the present invention is not limited to this. Furthermore, in addition to the hole shape and hole diameter of the gas injection holes, and the spacing between the gas injection holes located on the same gas injection wall and adjacent to each other, it is natural that the plurality of injection hole portions are different from each other. Various other elements such as the injection angle of the gas injection holes arranged in the gas injection wall, the linear shape of the holes in the injection direction, the curved shape, and the shape of the holes may be configured differently as necessary.
這種氣體噴射部220的外輪廓截面形狀可以形成為多邊形形狀。在這種情況下,每個氣體噴射壁223由氣體噴射部220的每個側壁定義。與此相應地,殼體210的腔體211可以形成為與氣體噴射部220的外輪廓截面形狀相對應的形狀。換句話說,殼體210的腔體211可以形成為在一個面上形成有開口213,並且與多個氣體噴射壁223中除了與開口213相對應的氣體噴射壁之外的其他氣體噴射壁的外表面相對應的形狀。The outer contour cross-sectional shape of the gas injection part 220 may be formed into a polygonal shape. In this case, each gas injection wall 223 is defined by each side wall of the gas injection portion 220 . Accordingly, the cavity 211 of the housing 210 may be formed into a shape corresponding to the outer contour cross-sectional shape of the gas injection part 220 . In other words, the cavity 211 of the housing 210 may be formed with the opening 213 formed on one surface and connected with other gas injection walls of the plurality of gas injection walls 223 except for the gas injection wall corresponding to the opening 213. The corresponding shape of the outer surface.
例如,參照圖3至圖6b,氣體噴射部220可以形成為正方形形狀。具體地,氣體噴射部220的外輪廓截面形狀形成為正方形形狀,並且在每個該氣體噴射壁223可以配置有連接該氣體流入口212和該內部流路222的連接流路224。殼體210的腔體211可以形成為在一個面上形成有開口213,並且與氣體噴射部220的三個氣體噴射壁223的外側表面相對應的矩形形狀。因此,在相對於殼體210的腔體211的每個配置位置,四個氣體噴射壁223中的一個配置成朝向腔體211的開口213,另外三個氣體噴射壁223可以緊貼於該腔體211的內壁表面。For example, referring to FIGS. 3 to 6 b , the gas injection part 220 may be formed in a square shape. Specifically, the outer contour cross-sectional shape of the gas injection part 220 is formed into a square shape, and a connection flow path 224 connecting the gas inlet 212 and the internal flow path 222 may be disposed on each gas injection wall 223 . The cavity 211 of the housing 210 may be formed in a rectangular shape with the opening 213 formed on one surface and corresponding to the outer surfaces of the three gas injection walls 223 of the gas injection part 220 . Therefore, in each configuration position relative to the cavity 211 of the housing 210, one of the four gas injection walls 223 is configured towards the opening 213 of the cavity 211, and the other three gas injection walls 223 can be in close proximity to the cavity The inner wall surface of body 211.
具體舉例說明,氣體噴射部220的外輪廓截面形狀形成為正方形形狀,並且可以包括由四個各自的側壁定義且彼此連接的四個氣體噴射壁223,四個氣體噴射壁223包括第一氣體噴射壁223a、第二氣體噴射壁223b、第三氣體噴射壁223c和第四氣體噴射壁223d。這裡,為了便於說明,如圖所示,第一氣體噴射壁223a、第二氣體噴射壁223b、第三氣體噴射壁223c和第四氣體噴射壁223d可以分別定義為前側壁、底側壁、後側壁和上側壁,但是不限於此。To illustrate specifically, the outer contour cross-sectional shape of the gas injection part 220 is formed into a square shape, and may include four gas injection walls 223 defined by four respective side walls and connected to each other, the four gas injection walls 223 including the first gas injection wall 223a, the second gas injection wall 223b, the third gas injection wall 223c and the fourth gas injection wall 223d. Here, for convenience of explanation, as shown in the figure, the first gas injection wall 223a, the second gas injection wall 223b, the third gas injection wall 223c and the fourth gas injection wall 223d may be respectively defined as a front side wall, a bottom side wall, and a rear side wall. and upper side walls, but is not limited thereto.
第一噴射壁223a可以設置有第一氣體噴射孔部221a以及連接殼體210的氣體流入口212和氣體噴射部220的內部流路222的第一連接流路224a。第一氣體噴射孔部221a可以包括具有第一孔徑並以第一間隔配置的多個第一氣體噴射孔225a。圖6a示出了在第一配置位置P1下,將氣體噴射部220定位在殼體的腔體內以使第一噴射壁223a的第一氣體噴射孔部221a朝向殼體210的腔體211的開口213時,從正面觀察氣體噴射部220的第一噴射壁223a的圖。The first injection wall 223 a may be provided with a first gas injection hole portion 221 a and a first connection flow path 224 a connecting the gas inlet 212 of the housing 210 and the internal flow path 222 of the gas injection portion 220 . The first gas injection hole portion 221a may include a plurality of first gas injection holes 225a having a first hole diameter and arranged at a first interval. Figure 6a shows that in the first configuration position P1, the gas injection part 220 is positioned in the cavity of the housing such that the first gas injection hole part 221a of the first injection wall 223a faces the opening of the cavity 211 of the housing 210 At 213 , the first injection wall 223 a of the gas injection part 220 is viewed from the front.
連接到第一噴射壁223a的第二噴射壁223b可以設置有第二氣體噴射孔部221b以及連接殼體210的氣體流入口212和氣體噴射部220的內部流路222的第二連接流路224b。第二氣體噴射孔部221b可以包括具有第二孔徑並以與相鄰的第一氣體噴射孔225a之間的間隔相同的第一間隔配置的多個第二氣體噴射孔225b。這裡,第二氣體噴射孔225b的第二孔徑可以小於第一氣體噴射孔225a的第一孔徑。圖6b示出了在第二配置位置P2下,將氣體噴射部220定位在殼體210的腔體211內以使第二噴射壁223b的第二氣體噴射孔部221b朝向殼體210的腔體211的開口213時,從正面觀察氣體噴射部220的第二噴射壁223b的圖。The second injection wall 223b connected to the first injection wall 223a may be provided with a second gas injection hole portion 221b and a second connection flow path 224b connecting the gas inlet 212 of the housing 210 and the internal flow path 222 of the gas injection portion 220 . The second gas injection hole portion 221b may include a plurality of second gas injection holes 225b having a second hole diameter and arranged at the same first interval as an interval between adjacent first gas injection holes 225a. Here, the second hole diameter of the second gas injection hole 225b may be smaller than the first hole diameter of the first gas injection hole 225a. FIG. 6b shows that in the second configuration position P2, the gas injection part 220 is positioned in the cavity 211 of the housing 210 so that the second gas injection hole part 221b of the second injection wall 223b faces the cavity of the housing 210. 211, the second injection wall 223b of the gas injection part 220 is viewed from the front.
與第一噴射壁223a相對地連接到第二噴射壁223b的第三噴射壁223c可以設置有第三氣體噴射孔部221c以及連接殼體210的氣體流入口212和氣體噴射部220的內部流路222的第三連接流路224c。第三氣體噴射孔部221c可以包括具有與第一氣體噴射孔225a的孔徑相同的第一孔徑並以第二間隔配置的多個第三氣體噴射孔225c。這裡,第三氣體噴射孔225c之間的第二間隔可以小於第一氣體噴射孔225a之間的第一間隔。The third injection wall 223c connected to the second injection wall 223b opposite the first injection wall 223a may be provided with a third gas injection hole portion 221c and an internal flow path connecting the gas inlet 212 of the housing 210 and the gas injection portion 220 The third connecting flow path 224c of 222. The third gas injection hole portion 221c may include a plurality of third gas injection holes 225c having the same first hole diameter as that of the first gas injection hole 225a and arranged at a second interval. Here, the second interval between the third gas injection holes 225c may be smaller than the first interval between the first gas injection holes 225a.
與第二噴射壁223b相對地連接在第一噴射壁223a和第三噴射壁223c之間的第四噴射壁223d可以設置有第四氣體噴射孔部221d以及連接殼體210的氣體流入口212和氣體噴射部220的內部流路222的第四連接流路224d。第四氣體噴射孔部221d可以包括具有與第二氣體噴射孔225b的孔徑相同的第二孔徑並以與相鄰的第三氣體噴射孔225c之間的間隔相同的第二間隔配置的多個第四氣體噴射孔225d。The fourth injection wall 223d connected between the first injection wall 223a and the third injection wall 223c opposite to the second injection wall 223b may be provided with a fourth gas injection hole portion 221d and a gas inflow port 212 connecting the housing 210 and The fourth connection flow path 224d of the internal flow path 222 of the gas injection part 220. The fourth gas injection hole portion 221d may include a plurality of third gas injection holes having the same second hole diameter as that of the second gas injection hole 225b and arranged at the same second interval as the interval between adjacent third gas injection holes 225c. Four gas injection holes 225d.
這裡,具體地,參照圖7說明本發明的氣體噴射單元的操作過程。圖7是示出本發明一實施例的氣體噴射單元中,省略了除朝向開口的氣體噴射孔部之外的其他氣體噴射孔部的氣體噴射單元的氣體噴射部的構成的圖。Here, specifically, the operation process of the gas injection unit of the present invention is explained with reference to FIG. 7 . 7 is a diagram illustrating a structure of a gas injection portion of the gas injection unit in which other gas injection hole portions other than the gas injection hole portion facing the opening are omitted in the gas injection unit according to one embodiment of the present invention.
如圖7所示,當要使用設置在氣體噴射部220的第一噴射壁223a的第一噴射孔部221a時,將氣體噴射部220安裝到殼體210的腔體211內並定位,以使設置在氣體噴射部220的第一噴射壁223a的第一噴射孔部221a朝向殼體210的腔體211的開口213。在這種情況下,第四噴射壁223d的第四連接流路224d連接到殼體210的氣體流入口212,第一連接流路至第三連接流路可以通過腔體211的內壁面密封。另外,這裡,設置在第一噴射壁223a的第一連接流路也可以通過其他構件密封,例如可以通過後述的蓋體密封。根據這種構成,從供應管線供應的氣體通過形成在殼體210的腔體211的氣體流入口212和第四連接流路224d流向氣體噴射部220的內部流路222,從而可以通過第一氣體噴射孔部221a的多個第一氣體噴射孔225a噴射氣體。As shown in FIG. 7 , when the first injection hole portion 221 a provided in the first injection wall 223 a of the gas injection portion 220 is to be used, the gas injection portion 220 is installed into the cavity 211 of the housing 210 and positioned so that The first injection hole portion 221a provided in the first injection wall 223a of the gas injection portion 220 faces the opening 213 of the cavity 211 of the housing 210. In this case, the fourth connection flow path 224d of the fourth injection wall 223d is connected to the gas inlet 212 of the housing 210, and the first to third connection flow paths can be sealed by the inner wall surface of the cavity 211. In addition, here, the first connection flow path provided in the first injection wall 223a may be sealed by other members, for example, it may be sealed by a cover body described below. According to this configuration, the gas supplied from the supply line flows to the internal flow path 222 of the gas injection part 220 through the gas inlet 212 formed in the cavity 211 of the housing 210 and the fourth connection flow path 224d, so that the first gas can pass through The plurality of first gas injection holes 225a of the injection hole portion 221a inject gas.
因此,當要使用基板處理製程所需的氣體噴射部220的氣體噴射孔部221時,將氣體噴射部220從殼體210的腔體211拆卸後,從第一氣體噴射孔部221a、第二氣體噴射孔部221b、第三氣體噴射孔部221c和第四氣體噴射孔部221d中選擇期望的氣體噴射孔部安裝到殼體210的腔體211內並定位,以使該氣體噴射孔部朝向殼體210的腔體211的開口213,從而可以對基板進行乾燥或清洗。Therefore, when the gas injection hole part 221 of the gas injection part 220 required for the substrate processing process is to be used, the gas injection part 220 is detached from the cavity 211 of the housing 210, and then the gas injection hole part 221a and the second gas injection hole part 221 are removed. A desired gas injection hole portion is selected from the gas injection hole portion 221b, the third gas injection hole portion 221c, and the fourth gas injection hole portion 221d, is installed in the cavity 211 of the housing 210, and is positioned so that the gas injection hole portion faces The opening 213 of the cavity 211 of the housing 210 allows the substrate to be dried or cleaned.
以上具體說明了配置在第一氣體噴射壁至第四氣體噴射壁的氣體噴射孔部的構成,但這只是為了容易理解本發明而提供的一個實施例,本發明不僅限於此,而且可以以各種形式實現氣體噴射孔部的構成。The structure of the gas injection hole portions arranged in the first gas injection wall to the fourth gas injection wall has been specifically described above, but this is only an example provided for easy understanding of the present invention. The present invention is not limited to this, and can be implemented in various forms. The structure of the gas injection hole is realized in the form.
另一方面,本發明的氣體噴射單元200還可以進一步包括蓋體230。On the other hand, the gas injection unit 200 of the present invention may further include a cover 230 .
這種蓋體230可以結合到殼體210的腔體211的開口213。這種蓋體230可以以可拆卸或可開閉的方式結合到殼體210的腔體211的開口213,以便從殼體210的腔體211拆卸氣體噴射部220。另外,蓋體230上可以形成有露出氣體噴射部220的氣體噴射孔部221的吐出口231。當氣體流入口212配置在殼體210的上部中心部分時,這種吐出口231可以形成為兩個吐出口231,該兩個吐出口231以連接到該氣體流入口212的氣體噴射部220的連接流路224為中心在左右兩側隔開形成,並分別露出配置在左右兩側的多個氣體噴射孔225。Such a cover 230 may be coupled to the opening 213 of the cavity 211 of the housing 210 . This cover 230 may be coupled to the opening 213 of the cavity 211 of the housing 210 in a detachable or openable and closable manner, so as to detach the gas injection part 220 from the cavity 211 of the housing 210 . In addition, the cover 230 may be formed with an outlet 231 exposing the gas injection hole portion 221 of the gas injection portion 220 . When the gas inlet 212 is disposed at the upper center portion of the housing 210, the outlet 231 may be formed into two outlets 231 connected to the gas injection portion 220 of the gas inlet 212. The connecting flow path 224 is formed to be spaced apart on the left and right sides in the center, and a plurality of gas injection holes 225 arranged on the left and right sides are respectively exposed.
進一步地,當該氣體噴射部220形成有連接該氣體流入口212和該內部流路222的多個連接流路224時,該蓋體230上可以配置有插入到多個連接流路224中朝向殼體210的腔體211的開口213的連接流路224中以進行密封的密封凸起232。因此,可以將氣體噴射部220牢固地定位在殼體210和蓋體230之間,從而可以通過氣體噴射部220穩定地實現氣體噴射操作。Furthermore, when the gas injection part 220 is formed with a plurality of connection flow paths 224 connecting the gas inlet 212 and the internal flow path 222 , the cover 230 may be configured with a plurality of connection flow paths 224 inserted into the plurality of connection flow paths 224 . A sealing protrusion 232 is provided in the connection flow path 224 of the opening 213 of the cavity 211 of the housing 210 for sealing. Therefore, the gas injection part 220 can be firmly positioned between the housing 210 and the cover 230 , so that the gas injection operation can be stably realized by the gas injection part 220 .
這裡,以蓋體230結合到殼體210的腔體211的開口213的方式進行了說明,但是本發明不限於此,作為其他實施例,蓋體也可以結合到氣體噴射部。Here, the cover 230 is described as being coupled to the opening 213 of the cavity 211 of the housing 210, but the present invention is not limited thereto. As other embodiments, the cover may also be coupled to the gas injection part.
圖8a和圖8b分別是在具有現有的一體構成的狹縫形狀的氣體噴射口的氣體噴射單元和本發明的氣體噴射單元向基板噴射氣體的過程中分析氣體流速的圖。8a and 8b are views analyzing the gas flow rate during the process of injecting gas to a substrate by a conventional gas injection unit having an integrally formed slit-shaped gas injection port and the gas injection unit of the present invention, respectively.
如圖8a和圖8b所示,可以看出,在分別利用具有現有的狹縫形狀的氣體噴射口的氣體噴射單元400和具有本發明的氣體噴射孔部的氣體噴射單元200,並通過無塵控制器(Dust free controller)E吸入氣體的狀態下,以相同的流速向基板S噴射氣體,其結果,與通過圖8a所示的具有現有的狹縫形狀的氣體噴射口的氣體噴射單元400噴射的氣體的運動量傳遞效果相比,通過圖8b所示的具有本發明的氣體噴射孔部的氣體噴射單元200噴射的氣體的運動量傳遞效果增加。As shown in FIGS. 8a and 8b , it can be seen that the gas injection unit 400 having the conventional slit-shaped gas injection port and the gas injection unit 200 having the gas injection hole portion of the present invention are respectively used, and the dust-free air is passed through the gas injection unit 400 . The controller (dust free controller) E injects the gas at the same flow rate to the substrate S while sucking the gas. As a result, the gas injection unit 400 having the conventional slit-shaped gas injection port shown in FIG. 8a injects the gas. Compared with the motion amount transmission effect of the gas, the motion amount transmission effect of the gas injected through the gas injection unit 200 having the gas injection hole portion of the present invention shown in FIG. 8b is increased.
另外,圖9a和圖9b分別是在具有現有的一體構成的狹縫形狀的噴射口的氣體噴射單元和本發明的氣體噴射單元向基板噴射氣體的過程中分析氣體壓力的圖。9a and 9b are diagrams illustrating the analysis of gas pressure in the process of injecting gas to a substrate by a conventional gas injection unit having an integrally formed slit-shaped injection port and a gas injection unit of the present invention, respectively.
如圖8a和圖8b所示,可以看出,在分別利用具有現有的狹縫形狀的氣體噴射口的氣體噴射單元400和具有本發明的氣體噴射孔部的氣體噴射單元200,並通過無塵控制器E吸入氣體的狀態下,以相同的流速向基板S噴射氣體,其結果,通過圖9a所示的具有現有的狹縫形狀的氣體噴射口的氣體噴射單元400噴射的氣體的運動量傳遞效果減少,因此受到周邊氣流影響較多,從而在對基板S進行顆粒清洗時清洗面積有所減小,相反,通過圖9b所示的具有本發明的氣體噴射孔部的氣體噴射單元200噴射的氣體的運動量傳遞效果增加,因此幾乎不受周邊氣流的影響,從而清洗面積明顯增加。As shown in FIGS. 8a and 8b , it can be seen that the gas injection unit 400 having the conventional slit-shaped gas injection port and the gas injection unit 200 having the gas injection hole portion of the present invention are respectively used, and the dust-free air is passed through the gas injection unit 400 . The controller E injects the gas to the substrate S at the same flow rate while inhaling the gas. As a result, the motion amount of the gas injected through the gas injection unit 400 having the conventional slit-shaped gas injection port shown in FIG. 9a is transmitted. Reduced, it is more affected by the surrounding air flow, so the cleaning area is reduced when the substrate S is cleaned with particles. On the contrary, the gas injected through the gas injection unit 200 having the gas injection hole portion of the present invention shown in FIG. 9b The motion transfer effect is increased, so it is almost not affected by the surrounding air flow, so the cleaning area is significantly increased.
如上所述,本發明的氣體噴射單元的構成通過這種氣體噴射孔部的結構,與現有的狹縫形狀的氣體噴射結構相比,可以增加氣體的運動量傳遞效果,並且當用於清洗製程時,可以增加清洗面積,進而有利於減少氣體噴射部的整體流量偏差,進一步地,由於具有多種類型的氣體噴射孔部,因此無需適用於以往使用的狹縫形狀的噴射結構的用於調節間隙間隔的單獨的調節裝置,可以製作成簡單的結構,並且可以根據需要選用期望的氣體噴射孔部,從而可以實現氣體的流量和流速的調節。As mentioned above, the structure of the gas injection unit of the present invention can increase the movement amount transmission effect of the gas through the structure of the gas injection hole portion compared with the existing slit-shaped gas injection structure, and when used in the cleaning process , can increase the cleaning area, thereby helping to reduce the overall flow rate deviation of the gas injection part. Furthermore, since there are multiple types of gas injection holes, there is no need to adapt to the slit-shaped injection structure used in the past for adjusting the gap interval. The independent regulating device can be made into a simple structure, and the desired gas injection hole can be selected as needed, so that the gas flow rate and flow rate can be adjusted.
這種氣體噴射部的外輪廓截面形狀除了正方形形狀之外,還可以是三角形、五邊形、六邊形等多邊形形狀,但是不限於此,除了多邊形形狀之外,氣體噴射部還可以形成為各種形狀,例如,氣體噴射部的外輪廓截面形狀可以形成為圓形形狀。在這種情況下,氣體噴射孔部可以沿著該圓形形狀的外輪廓周面在圓周方向上以規定間隔形成。根據這種構成,當要選擇期望的氣體噴射孔部時,氣體噴射部可以在殼體的腔體內通過旋轉來改變位置並定位,以朝向殼體的腔體的開口,無需拆卸。另外,又例如,氣體噴射部的外輪廓截面形狀可以是以中心為基準對稱的形狀,如曲線形狀、花鍵形狀等。在這種情況下,為了實現氣體噴射部相對於殼體的腔體容易拆卸,在殼體的腔體的一端可以形成有拆卸口。因此,當要改變氣體噴射部的配置位置時,可以從殼體的腔體的一端將該氣體噴射部拆卸下來,然後選擇期望的氣體噴射孔部並安裝到殼體的腔體內,以使該氣體噴射孔部朝向開口。In addition to the square shape, the outer contour cross-sectional shape of such a gas injection part may also be a polygonal shape such as a triangle, a pentagon, or a hexagon. However, it is not limited thereto. In addition to the polygonal shape, the gas injection part may also be formed in a polygonal shape. Various shapes, for example, the outer contour cross-sectional shape of the gas injection part may be formed into a circular shape. In this case, the gas injection hole portions may be formed at predetermined intervals in the circumferential direction along the circular outer contour surface. According to this configuration, when a desired gas injection hole portion is to be selected, the gas injection portion can be rotated within the cavity of the housing to change position and be positioned toward the opening of the cavity of the housing without disassembly. In addition, for another example, the outer contour cross-sectional shape of the gas injection part may be a shape that is symmetrical about the center, such as a curved shape, a spline shape, etc. In this case, in order to achieve easy detachment of the gas injection part relative to the cavity of the housing, a detachment port may be formed at one end of the cavity of the housing. Therefore, when the arrangement position of the gas injection part is to be changed, the gas injection part can be disassembled from one end of the cavity of the casing, and then the desired gas injection hole part is selected and installed into the cavity of the casing so that the gas injection part is The gas injection hole portion faces the opening.
以上具體說明了殼體的氣體流入口配置在殼體的上部中心部分的結構,但是本發明不限於此,只要是可以使氣體流向氣體噴射部的內部流路內並使流速偏差最小化的結構,則可以配置在殼體的適當位置。The structure in which the gas inlet of the casing is disposed in the upper center portion of the casing has been specifically described above. However, the present invention is not limited to this, as long as it is a structure that can cause the gas to flow into the internal flow path of the gas injection part and minimize the flow velocity deviation. , it can be configured at an appropriate location on the housing.
這裡,氣體的流速偏差不僅可以通過改變該殼體的氣體流入口的配置位置來最小化,通過將設置在氣體噴射部的氣體噴射孔部的多個氣體噴射孔的孔徑的大小設置為具有細微差異,或者通過精細地調整形成在同一氣體噴射孔部的相鄰的氣體噴射孔之間的間隔的方式,也可以使氣體的流速偏差最小化。Here, the flow rate deviation of the gas can be minimized not only by changing the arrangement position of the gas inlet of the housing, but also by setting the size of the apertures of the plurality of gas injection holes provided in the gas injection hole portion of the gas injection portion to have a fine diameter. The difference in gas flow rate can also be minimized by finely adjusting the spacing between adjacent gas injection holes formed in the same gas injection hole portion.
例如,下面以應用了殼體的氣體流入口配置在殼體的腔體的兩端部的結構的另一示例進行說明。For example, another example of a structure in which the gas inlets of the housing are arranged at both ends of the cavity of the housing will be described below.
圖10是本發明另一實施例的氣體噴射單元的主視圖。Fig. 10 is a front view of a gas injection unit according to another embodiment of the present invention.
在本實施例中,除了氣體流入口的配置位置和連接流路與上述實施例不同的部分之外,應用於上述實施例的構成可以等同地應用於本實施例,這裡將省略重複說明。In this embodiment, except for the arrangement position of the gas inlet and the connection flow path, which are different from the above-mentioned embodiment, the configuration applied to the above-mentioned embodiment can be equally applied to this embodiment, and repeated description will be omitted here.
參照圖10,殼體210的氣體流入口212a可以分別配置在殼體210的兩端部。Referring to FIG. 10 , the gas inflow ports 212 a of the housing 210 may be disposed at both ends of the housing 210 .
在這種情況下,可以省略上述實施例中說明的連接殼體210的氣體流入口212和氣體噴射部220的內部流路222的連接流路224。即,氣體噴射部220構成為內部流路222貫通氣體噴射部220的兩端部的結構,無需另外的連接流路,可以直接連接到設置在殼體210的兩端部的氣體流入口212a。In this case, the connection flow path 224 that connects the gas inlet 212 of the housing 210 and the internal flow path 222 of the gas injection part 220 described in the above embodiment may be omitted. That is, the gas injection part 220 is configured such that the internal flow paths 222 penetrate both ends of the gas injection part 220 and can be directly connected to the gas inflow ports 212 a provided at both ends of the housing 210 without the need for separate connecting flow paths.
以上,氣體噴射部220作為構成為可以在殼體210的腔體211內改變成多種配置位置的實施方式,以可拆卸地配置的具有多邊形形狀的外輪廓截面形狀的氣體噴射部220為例進行了說明,但是本發明不限於此,只要是氣體噴射部220可以在殼體210的腔體211內改變成多種配置位置的構成,則可以以各種形式構成。例如,氣體噴射部的外輪廓截面形狀可以形成為圓形,容納氣體噴射部的殼體的腔體可以具有與氣體噴射部的外輪廓截面形狀相對應的圓形形狀的截面形狀。在這種情況下,氣體噴射部設置為可以通過電機等驅動手段在腔體內旋轉,並且可以通過旋轉的操作來改變相對於腔體的配置位置,無需從殼體的腔體拆卸,因此可以選擇所需的氣體噴射部的氣體噴射孔部並定位,以使該氣體噴射孔部朝向殼體的開口。As mentioned above, as an embodiment in which the gas injection part 220 is configured to be changeable into various arrangement positions within the cavity 211 of the housing 210 , the gas injection part 220 having a polygonal outer contour cross-sectional shape that is detachably arranged is taken as an example. However, the present invention is not limited thereto. As long as the gas injection part 220 can be changed into various arrangement positions in the cavity 211 of the housing 210, it may be configured in various forms. For example, the outer contour cross-sectional shape of the gas injection part may be formed in a circular shape, and the cavity of the housing housing the gas injection part may have a circular cross-sectional shape corresponding to the outer contour cross-sectional shape of the gas injection part. In this case, the gas injection part is arranged to be rotated in the cavity by driving means such as a motor, and the configuration position relative to the cavity can be changed by the rotation operation without being disassembled from the cavity of the housing, so it is possible to choose The gas injection hole portion of the required gas injection portion is positioned so that the gas injection hole portion faces the opening of the housing.
另外,在本發明中,具體說明了在氣體噴射部220的每個氣體噴射壁(側壁)配置有一個氣體噴射孔部的構成,但是本發明不限於此,根據需要,也可以在氣體噴射部220的每個氣體噴射壁(側壁)排列多列氣體噴射孔部。在這種情況下,排列在每個氣體噴射壁(側壁)的多列氣體噴射孔部可以以各種形式形成,另外,也可以根據需要將各列氣體噴射孔部的噴射角度設置為不同。In addition, in the present invention, the structure in which one gas injection hole is arranged for each gas injection wall (side wall) of the gas injection part 220 has been specifically described. However, the invention is not limited to this. If necessary, the gas injection hole may be provided in the gas injection part 220 . Each gas injection wall (side wall) of 220 is arranged with multiple rows of gas injection holes. In this case, the plurality of rows of gas injection hole portions arranged on each gas injection wall (side wall) may be formed in various forms, and the injection angles of the gas injection hole portions in each row may be set to be different as necessary.
另外,在以上說明中,作為實施例說明了基板處理裝置中包括旋轉軸和配置在旋轉軸上的輥件的輸送單元的構成,但是本發明的輸送單元不僅限於這種構成,只要是執行輸送基板的功能的構成,當然也可以以各種形式實現。In addition, in the above description, the structure of the conveying unit including the rotating shaft and the roller arranged on the rotating shaft in the substrate processing apparatus has been described as an embodiment. However, the conveying unit of the present invention is not limited to this structure. As long as the conveying unit is executed Of course, the functional configuration of the substrate can also be implemented in various forms.
如上所述,本發明雖然通過限定的實施例和附圖進行了說明,但是本發明不限於此,在本發明的技術思想和下面記載的申請專利範圍的等同範圍內,發明所屬技術領域通常知識者當然可以進行各種修改和變形。As mentioned above, although the present invention has been described through limited embodiments and drawings, the present invention is not limited thereto. Within the scope of equivalence between the technical idea of the present invention and the patent application scope described below, it is common knowledge in the technical field to which the invention belongs. Of course, various modifications and transformations can be made.
10:基板處理裝置 100:工藝腔體 110:搬入口 120:搬出口 130:排液口 200:氣體噴射單元 210:殼體 211:腔體 212、212a:氣體流入口 213:開口 220:氣體噴射部 221:氣體噴射孔部 221a:第一氣體噴射孔部 221b:第二氣體噴射孔部 221c:第三氣體噴射孔部 221d:第四氣體噴射孔部 222:內部流路 223:氣體噴射壁 223a:第一氣體噴射壁 223b:第二氣體噴射壁 223c:第三氣體噴射壁 223d:第四氣體噴射壁 224:連接流路 224a:第一連接流路 224b:第二連接流路 224c:第三連接流路 224d:第四連接流路 225:氣體噴射孔 225a:第一氣體噴射孔 225b:第二氣體噴射孔 225c:第三氣體噴射孔 225d:第四氣體噴射孔 230:蓋體 231:吐出口 232:密封凸起 300:輸送單元 310:旋轉軸 320:輥件 S:基板 P1:第一配置位置 P2:第二配置位置 10:Substrate processing device 100: Process chamber 110:Move-in entrance 120:Move out 130: Drainage port 200:Gas injection unit 210: Shell 211:Cavity 212, 212a: gas inlet 213:Open your mouth 220:Gas injection part 221: Gas injection hole part 221a: First gas injection hole part 221b: Second gas injection hole part 221c: Third gas injection hole part 221d: The fourth gas injection hole part 222: Internal flow path 223:Gas jet wall 223a: First gas injection wall 223b: Second gas injection wall 223c: Third gas injection wall 223d: The fourth gas injection wall 224:Connect flow path 224a: First connection flow path 224b: Second connection flow path 224c: Third connection flow path 224d: Fourth connection flow path 225: Gas injection hole 225a: First gas injection hole 225b: Second gas injection hole 225c: The third gas injection hole 225d: The fourth gas injection hole 230: Cover 231: spit out 232:Sealing bump 300:Conveying unit 310:Rotation axis 320: Roller parts S:Substrate P1: first configuration position P2: Second configuration position
[圖1a]和[圖1b]是分別示出本發明的不同實施例的基板處理裝置的示例圖。 [圖2]是本發明一實施例的氣體噴射單元的分解圖。 [圖3]是從圖2的側面觀察的氣體噴射單元的分解圖。 [圖4]是本發明一實施例的氣體噴射單元的主視圖。 [圖5a]和[圖5b]是分別沿圖4的A-A'線和B-B'線剖切的剖視圖。 [圖6a]和[圖6b]是示出本發明一實施例的氣體噴射單元的氣體噴射部中相鄰的兩個氣體噴射壁的圖。 [圖7]是示出本發明一實施例的氣體噴射單元中,省略了除朝向開口的氣體噴射孔部之外的其他氣體噴射孔部的氣體噴射單元的氣體噴射部的構成的圖。 [圖8a]和[圖8b]分別是在具有現有的一體構成的狹縫形狀的氣體噴射口的氣體噴射單元和本發明的氣體噴射單元向基板噴射氣體的過程中分析氣體流速的圖。 [圖9a]和[圖9b]分別是在具有現有的一體構成的狹縫形狀的氣體噴射口的氣體噴射單元和本發明的氣體噴射單元向基板噴射氣體的過程中分析氣體壓力的圖。 [圖10]是本發明另一實施例的氣體噴射單元的主視圖。 [Fig. 1a] and [Fig. 1b] are exemplary diagrams respectively showing substrate processing apparatuses according to different embodiments of the present invention. [Fig. 2] is an exploded view of a gas injection unit according to an embodiment of the present invention. [Fig. 3] is an exploded view of the gas injection unit viewed from the side of Fig. 2. [Fig. [Fig. 4] is a front view of the gas injection unit according to one embodiment of the present invention. [Fig. 5a] and [Fig. 5b] are cross-sectional views taken along line AA' and line BB' of Fig. 4, respectively. [Fig. 6a] and [Fig. 6b] are diagrams showing two adjacent gas injection walls in the gas injection part of the gas injection unit according to an embodiment of the present invention. 7 is a diagram illustrating a structure of a gas injection portion of the gas injection unit in which other gas injection hole portions except for the gas injection hole portion facing the opening are omitted in the gas injection unit according to one embodiment of the present invention. 8a and 8b are views analyzing the gas flow rate in the process of injecting gas to a substrate by a conventional gas injection unit having an integrally formed slit-shaped gas injection port and a gas injection unit of the present invention, respectively. [Fig. 9a] and [Fig. 9b] are diagrams illustrating the analysis of gas pressure in the process of injecting gas to a substrate by a conventional gas injection unit having an integrated slit-shaped gas injection port and a gas injection unit of the present invention, respectively. [Fig. 10] is a front view of a gas injection unit according to another embodiment of the present invention.
200:氣體噴射單元 200:Gas injection unit
210:殼體 210: Shell
211:腔體 211:Cavity
212:氣體流入口 212:Gas inlet
213:開口 213:Open your mouth
220:氣體噴射部 220:Gas injection part
221:氣體噴射孔部 221: Gas injection hole part
222:內部流路 222: Internal flow path
223:氣體噴射壁 223:Gas jet wall
224:連接流路 224:Connect flow path
225:氣體噴射孔 225: Gas injection hole
230:蓋體 230: Cover
231:吐出口 231: spit out
232:密封凸起 232:Sealing bump
Claims (20)
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KR1020220061193A KR102622277B1 (en) | 2022-05-19 | 2022-05-19 | Gas injection unit and apparatus for treating substrate |
KR10-2022-0061193 | 2022-05-19 |
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TW202345985A true TW202345985A (en) | 2023-12-01 |
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KR (1) | KR102622277B1 (en) |
CN (1) | CN117086023A (en) |
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KR100762371B1 (en) | 2006-04-12 | 2007-10-02 | 주식회사 심우 | A glass dryness air knife |
KR101243742B1 (en) * | 2011-06-24 | 2013-03-13 | 국제엘렉트릭코리아 주식회사 | Injection member used in manufacturing semiconductor device and plasma processing apparatus having the same |
KR101777688B1 (en) * | 2013-10-21 | 2017-09-27 | 에이피시스템 주식회사 | treatment equipment |
KR20170049962A (en) * | 2015-10-29 | 2017-05-11 | 세메스 주식회사 | Apparatus and method for treating Substrate with the nozzle |
JP6949510B2 (en) * | 2017-02-28 | 2021-10-13 | 株式会社Screenホールディングス | Substrate processing equipment and substrate processing method |
KR101874809B1 (en) * | 2018-02-08 | 2018-07-05 | 김원기 | Contaminant removal device |
KR102568797B1 (en) * | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing system |
KR20200137372A (en) * | 2019-05-30 | 2020-12-09 | 주식회사 원익아이피에스 | Substrate processing apparatus |
KR20210047736A (en) * | 2019-10-22 | 2021-04-30 | 주식회사 원익아이피에스 | Substrate processing apparatus |
KR102357066B1 (en) * | 2019-10-31 | 2022-02-03 | 세메스 주식회사 | Apparatus for treating substrate |
KR102317442B1 (en) * | 2020-01-20 | 2021-10-26 | 주성엔지니어링(주) | Method for processing substrate |
KR102336731B1 (en) * | 2020-01-31 | 2021-12-06 | 세메스 주식회사 | Apparatus for treating substrate |
KR102389224B1 (en) * | 2020-03-09 | 2022-04-21 | 주식회사 에이치에스하이테크 | Two-fluid nozzle for cleaning substrate |
KR20210113816A (en) * | 2020-03-09 | 2021-09-17 | 주식회사 에이치에스하이테크 | Two-fluid nozzle for cleaning substrate |
KR20210133557A (en) * | 2020-04-29 | 2021-11-08 | 세메스 주식회사 | Apparatus and method for processing substrate |
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