TW202341516A - 半導體繼電器及包括該半導體繼電器的半導體繼電器模組 - Google Patents

半導體繼電器及包括該半導體繼電器的半導體繼電器模組 Download PDF

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Publication number
TW202341516A
TW202341516A TW112110730A TW112110730A TW202341516A TW 202341516 A TW202341516 A TW 202341516A TW 112110730 A TW112110730 A TW 112110730A TW 112110730 A TW112110730 A TW 112110730A TW 202341516 A TW202341516 A TW 202341516A
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TW
Taiwan
Prior art keywords
light
semiconductor relay
input terminal
axis
base body
Prior art date
Application number
TW112110730A
Other languages
English (en)
Chinese (zh)
Inventor
栗秋智成
北原大祐
恒岡道朗
梶本剛志
Original Assignee
日商松下知識產權經營股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 日商松下知識產權經營股份有限公司 filed Critical 日商松下知識產權經營股份有限公司
Publication of TW202341516A publication Critical patent/TW202341516A/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/205—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors
    • H10F55/207—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors wherein the electric light source comprises semiconductor devices having potential barriers, e.g. light emitting diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Electronic Switches (AREA)
TW112110730A 2022-04-01 2023-03-22 半導體繼電器及包括該半導體繼電器的半導體繼電器模組 TW202341516A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022061746 2022-04-01
JP2022-061746 2022-04-01

Publications (1)

Publication Number Publication Date
TW202341516A true TW202341516A (zh) 2023-10-16

Family

ID=88201878

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112110730A TW202341516A (zh) 2022-04-01 2023-03-22 半導體繼電器及包括該半導體繼電器的半導體繼電器模組

Country Status (6)

Country Link
US (1) US20250221083A1 (https=)
EP (1) EP4507013A4 (https=)
JP (1) JPWO2023189918A1 (https=)
CN (1) CN118974951A (https=)
TW (1) TW202341516A (https=)
WO (1) WO2023189918A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5911457Y2 (ja) * 1979-05-23 1984-04-09 日本電気ホームエレクトロニクス株式会社 光結合半導体装置
JPH11195973A (ja) * 1998-01-07 1999-07-21 Oki Electric Ind Co Ltd 半導体装置及びそれを用いた双方向光ｍｏｓリレー
US20090140266A1 (en) * 2007-11-30 2009-06-04 Yong Liu Package including oriented devices
JP2009152301A (ja) * 2007-12-19 2009-07-09 Sharp Corp フォトカプラおよびこのフォトカプラを搭載した電子機器装置
JP5502422B2 (ja) 2009-10-09 2014-05-28 パナソニック株式会社 半導体リレー
JP2015056504A (ja) * 2013-09-11 2015-03-23 株式会社東芝 光結合装置および発光素子
EP3796575B1 (en) * 2019-09-17 2025-03-19 Infineon Technologies AG Optocoupler with side-emitting electromagnetic radiation source

Also Published As

Publication number Publication date
CN118974951A (zh) 2024-11-15
JPWO2023189918A1 (https=) 2023-10-05
US20250221083A1 (en) 2025-07-03
EP4507013A4 (en) 2025-08-06
WO2023189918A1 (ja) 2023-10-05
EP4507013A1 (en) 2025-02-12

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