TW202333189A - 上部電極構造及電漿處理裝置 - Google Patents

上部電極構造及電漿處理裝置 Download PDF

Info

Publication number
TW202333189A
TW202333189A TW111136879A TW111136879A TW202333189A TW 202333189 A TW202333189 A TW 202333189A TW 111136879 A TW111136879 A TW 111136879A TW 111136879 A TW111136879 A TW 111136879A TW 202333189 A TW202333189 A TW 202333189A
Authority
TW
Taiwan
Prior art keywords
plasma processing
cooling plate
electrode
electrode plate
processing device
Prior art date
Application number
TW111136879A
Other languages
English (en)
Chinese (zh)
Inventor
佐藤徹治
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202333189A publication Critical patent/TW202333189A/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
TW111136879A 2021-10-05 2022-09-29 上部電極構造及電漿處理裝置 TW202333189A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-164043 2021-10-05
JP2021164043 2021-10-05

Publications (1)

Publication Number Publication Date
TW202333189A true TW202333189A (zh) 2023-08-16

Family

ID=85804227

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111136879A TW202333189A (zh) 2021-10-05 2022-09-29 上部電極構造及電漿處理裝置

Country Status (6)

Country Link
US (1) US20240249907A1 (https=)
JP (1) JPWO2023058480A1 (https=)
KR (1) KR20240090232A (https=)
CN (1) CN118043945A (https=)
TW (1) TW202333189A (https=)
WO (1) WO2023058480A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025212306A1 (en) * 2024-04-04 2025-10-09 Lam Research Corporation Gas distribution assembly for semiconductor processing chamber with aluminum nitride layer
WO2025216054A1 (ja) * 2024-04-09 2025-10-16 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4323021B2 (ja) * 1999-09-13 2009-09-02 株式会社エフオーアイ プラズマ処理装置
US6786175B2 (en) * 2001-08-08 2004-09-07 Lam Research Corporation Showerhead electrode design for semiconductor processing reactor
US8702866B2 (en) * 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
JP2008205415A (ja) * 2007-02-16 2008-09-04 Creative Technology:Kk 静電チャック
JP5224855B2 (ja) * 2008-03-05 2013-07-03 東京エレクトロン株式会社 電極ユニット、基板処理装置及び電極ユニットの温度制御方法
CN104813440A (zh) * 2012-09-26 2015-07-29 应用材料公司 于基板处理系统中控制温度
JP7246154B2 (ja) * 2018-10-02 2023-03-27 東京エレクトロン株式会社 プラズマ処理装置及び静電吸着方法
JP7153574B2 (ja) * 2019-01-17 2022-10-14 東京エレクトロン株式会社 上部電極構造、プラズマ処理装置、及び上部電極構造を組み立てる方法

Also Published As

Publication number Publication date
US20240249907A1 (en) 2024-07-25
KR20240090232A (ko) 2024-06-21
JPWO2023058480A1 (https=) 2023-04-13
WO2023058480A1 (ja) 2023-04-13
CN118043945A (zh) 2024-05-14

Similar Documents

Publication Publication Date Title
JP7551765B2 (ja) 基板処理チャンバにおける処理キットのシース及び温度制御
US12444644B2 (en) Lift pin assembly
JP6423706B2 (ja) プラズマ処理装置
CN111095501A (zh) 载置台和等离子体处理装置
JP2022524088A (ja) プラズマ処理チャンバにおける高周波（ｒｆ）電力印加のための静電チャック
JP2024541352A (ja) Ｐｖｄチャンバ用高温着脱式超高周波（ｖｈｆ）静電チャック（ｅｓｃ）
TW202333189A (zh) 上部電極構造及電漿處理裝置
CN119725207A (zh) 基板处理装置
JP6068849B2 (ja) 上部電極、及びプラズマ処理装置
US8342121B2 (en) Plasma processing apparatus
JP7145625B2 (ja) 基板載置構造体およびプラズマ処理装置
US20220068615A1 (en) Stage and plasma processing apparatus
CN213660345U (zh) 下电极组件和包含下电极组件的等离子体处理装置
KR102799000B1 (ko) 플라즈마 처리 장치
TW202142056A (zh) 電漿處理方法及電漿處理裝置
TW202240645A (zh) 下電極元件和包含下電極元件的等離子體處理裝置
US20230317422A1 (en) Substrate processing apparatus
TW202114024A (zh) 載置台及基板處理裝置
CN113555269A (zh) 配管系统和处理装置
JP2021044385A (ja) 熱媒体循環システム及び基板処理装置
US20230207280A1 (en) Substrate treating apparatus
KR20250104516A (ko) 샤워 헤드 어셈블리 및 기판 처리 장치
KR20240114600A (ko) 기판 처리 장치
KR20230004115A (ko) 지지 유닛 및 이를 포함하는 기판 처리 장치
TW202226739A (zh) 靜電吸盤、下電極元件及等離子體處理裝置