KR20240090232A - 상부 전극 구조 및 플라즈마 처리 장치 - Google Patents

상부 전극 구조 및 플라즈마 처리 장치 Download PDF

Info

Publication number
KR20240090232A
KR20240090232A KR1020247013621A KR20247013621A KR20240090232A KR 20240090232 A KR20240090232 A KR 20240090232A KR 1020247013621 A KR1020247013621 A KR 1020247013621A KR 20247013621 A KR20247013621 A KR 20247013621A KR 20240090232 A KR20240090232 A KR 20240090232A
Authority
KR
South Korea
Prior art keywords
plasma processing
cooling plate
processing device
electrode
electrode plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247013621A
Other languages
English (en)
Korean (ko)
Inventor
데츠지 사토
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20240090232A publication Critical patent/KR20240090232A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H01L21/6833—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020247013621A 2021-10-05 2022-09-26 상부 전극 구조 및 플라즈마 처리 장치 Pending KR20240090232A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021164043 2021-10-05
JPJP-P-2021-164043 2021-10-05
PCT/JP2022/035608 WO2023058480A1 (ja) 2021-10-05 2022-09-26 上部電極構造及びプラズマ処理装置

Publications (1)

Publication Number Publication Date
KR20240090232A true KR20240090232A (ko) 2024-06-21

Family

ID=85804227

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247013621A Pending KR20240090232A (ko) 2021-10-05 2022-09-26 상부 전극 구조 및 플라즈마 처리 장치

Country Status (6)

Country Link
US (1) US20240249907A1 (https=)
JP (1) JPWO2023058480A1 (https=)
KR (1) KR20240090232A (https=)
CN (1) CN118043945A (https=)
TW (1) TW202333189A (https=)
WO (1) WO2023058480A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025212306A1 (en) * 2024-04-04 2025-10-09 Lam Research Corporation Gas distribution assembly for semiconductor processing chamber with aluminum nitride layer
WO2025216054A1 (ja) * 2024-04-09 2025-10-16 東京エレクトロン株式会社 プラズマ処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020115419A (ja) 2019-01-17 2020-07-30 東京エレクトロン株式会社 上部電極構造、プラズマ処理装置、及び上部電極構造を組み立てる方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4323021B2 (ja) * 1999-09-13 2009-09-02 株式会社エフオーアイ プラズマ処理装置
US6786175B2 (en) * 2001-08-08 2004-09-07 Lam Research Corporation Showerhead electrode design for semiconductor processing reactor
US8702866B2 (en) * 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
JP2008205415A (ja) * 2007-02-16 2008-09-04 Creative Technology:Kk 静電チャック
JP5224855B2 (ja) * 2008-03-05 2013-07-03 東京エレクトロン株式会社 電極ユニット、基板処理装置及び電極ユニットの温度制御方法
CN104813440A (zh) * 2012-09-26 2015-07-29 应用材料公司 于基板处理系统中控制温度
JP7246154B2 (ja) * 2018-10-02 2023-03-27 東京エレクトロン株式会社 プラズマ処理装置及び静電吸着方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020115419A (ja) 2019-01-17 2020-07-30 東京エレクトロン株式会社 上部電極構造、プラズマ処理装置、及び上部電極構造を組み立てる方法

Also Published As

Publication number Publication date
US20240249907A1 (en) 2024-07-25
TW202333189A (zh) 2023-08-16
JPWO2023058480A1 (https=) 2023-04-13
WO2023058480A1 (ja) 2023-04-13
CN118043945A (zh) 2024-05-14

Similar Documents

Publication Publication Date Title
KR102734811B1 (ko) 배치대 및 플라즈마 처리 장치
KR101731017B1 (ko) 정전 척용 기판 및 정전 척
TWI850309B (zh) 電漿處理裝置
JP7346269B2 (ja) 静電吸着部の制御方法、及びプラズマ処理装置
US11756769B2 (en) Plasma processing apparatus
TW202117913A (zh) 載置台及電漿處理裝置
US20190304814A1 (en) Plasma processing apparatus
KR102819763B1 (ko) 정전 척, 지지대 및 플라즈마 처리 장치
US12217942B2 (en) Plasma processing apparatus
KR102585041B1 (ko) 플라스마 처리 장치
KR20240090232A (ko) 상부 전극 구조 및 플라즈마 처리 장치
KR102878028B1 (ko) 적재대 및 플라스마 처리 장치
JP7454407B2 (ja) プラズマ処理方法及びプラズマ処理装置
CN112349646B (zh) 载置台和基板处理装置
US11664198B2 (en) Plasma processing apparatus
US20230317422A1 (en) Substrate processing apparatus
US20230260757A1 (en) Plasma processing apparatus
CN113555269A (zh) 配管系统和处理装置
KR20170093723A (ko) 플라즈마 처리 장치
TWI918385B (zh) 載置台及基板處理裝置
KR102840563B1 (ko) 기판 처리 장치
JP2021044385A (ja) 熱媒体循環システム及び基板処理装置
KR102638030B1 (ko) 플라즈마 처리 장치와 그 제조 방법, 및 플라즈마 처리 방법
US11562892B2 (en) Dielectric member, structure, and substrate processing apparatus
KR20150117227A (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

D21 Rejection of application intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902