TW202331914A - 用於薄化基板之預對準裝置及方法 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 289
- 230000005686 electrostatic field Effects 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 35
- 230000008569 process Effects 0.000 claims abstract description 18
- 238000001514 detection method Methods 0.000 claims abstract description 14
- 230000003287 optical effect Effects 0.000 claims description 15
- 230000007246 mechanism Effects 0.000 claims description 9
- 230000005611 electricity Effects 0.000 claims description 4
- 230000003068 static effect Effects 0.000 claims description 4
- 238000006073 displacement reaction Methods 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 8
- 238000007689 inspection Methods 0.000 description 8
- 238000001179 sorption measurement Methods 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012636 effector Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
Abstract
本發明係指一種用於薄化基板之預對準裝置及方法,其中該預對準裝置具有一機座,且該機座上設有被允許選擇性相對位移之一驅動單元及一感測器單元,其該驅動單元具有延伸通過該機座、且被旋轉之一輸出軸,而該輸出軸上設有一被用於放置該薄化基板之基板平台,該基板平台可以被選擇性生成一吸附該薄化基板之靜電場,又該感測器單元可在檢測範圍內檢知該放置於基板平台之薄化基板的定向刻痕,以執行該薄化基板預對準之定向,藉此,使得該基板平台能相對該薄化基板生成靜電場,令該薄化基板可以被完全平貼吸附於該基板平台上,能提高該薄化基板在執行預對準時的準確度,減少因無法預對針而發生重新檢測的次數,進而提高製程良率。
Description
本發明隸屬一種薄化基板之定位技術領域,具體而言係一種用於薄化基板之預對準裝置及方法,藉以能減少預對準裝置因薄化基板受翹曲影響,以提升其檢測定向之準確度及檢測效率。
按,於基板〔如半導體晶圓或玻璃濾光片等〕上執行各種不同的處理操作〔如檢查、成像、印刷、雷射或切割等〕時,由於在處理流程期間發生任何錯位,都會導致嚴重且無可挽救的缺陷,而必須將基板如晶圓報廢,因此在進入處理流程之前必需預先進行該基板的定向,而被使用來識別基板定向的方式包括在基板的周圍上設置定向刻痕如缺口〔Notch〕或平邊〔Flat〕,並利用預對準裝置來旋轉該基板,使得其能夠藉由感測器檢出該等定向刻痕,以確定基板於處理流程之機械設備內的正確位置,否則將導致後續處理流程的失敗,該預對準裝置可以是獨立裝置或製程設備中的一部;
而近年來受到半導體製程的微細化發展,如存儲器和功率器件,它們的微型化朝著更小的尺寸、更高的性能以及更低的成本方向發展,為了讓晶片面積變的更小,半導體業界採行的設計方案是將原本晶片水平部署的晶片設計,改換成垂直向的堆疊方式進行,亦即所謂的3D IC堆疊封裝。由於3D IC
堆疊封裝係以垂直向進行堆疊,需利用矽穿孔〔Through-Silicon Via;TSV〕技術將IC封裝內的各功能晶片進行物理電氣連結,因此晶圓之厚度會被壓縮在100微米以下。另外近年來智慧型手機的照相品質足以媲美專業單眼相機,而智慧型手機相機鏡頭的成像品質大幅提升的關鍵之一,在於手機相機鏡頭導入超薄的藍玻璃濾光片,可吸收多餘的紅外光,還原物體的真實顏色。
而前述之薄化基板不論是薄化晶圓或超薄濾光片,當其厚度小於200μm、100μm或甚至小於50μm、且表面積越大〔如8吋、12吋或以上之半導體晶圓〕時,因為多複合性晶背材質上,對於每種金屬的延展性皆不一同,尤其在經過研磨、拋光、退火後的變化更多,進而產生翹曲〔Warpage〕的現象。而現有在進行預對準步驟時,係以一具真空吸盤〔Fork〕之抓取設備如機械手臂〔Robot〕將基板載入至該獨立或製程機台一部之預對準裝置的基板平台,而利用形成於基板平台表面的吸孔相對基板產生真空吸力予以固定,供後續透過基板平台旋轉來檢測基板上的缺口〔Notch〕或平邊〔Flat〕進行定向。如第1圖所示,當前述薄化之基板(100)的翹曲度較大時,會發生基板平台(200)對應之吸口(201)沒有被遮蓋而暴露在空氣中,這時氣流會流向這些未被遮蓋的吸口(201),使得那些被遮蓋的吸口(201)沒有足夠的真空吸力來抓取基板(100),如此將無法使薄化基板(100)完全平貼於基板平台(200)表面,除了可能因平整度問題造成預對準不準確外,更可能在基板平台(200)旋轉中發生掉片。再者,前述薄化基板其內部能承受之應力變化也會變小,當真空吸力過大時,可能會造成薄化基板(100)發生內裂,且容易在薄化基板(100)
表面留在吸口(201)的吸附痕跡,可能影響到薄化基板(100)後續的品質及良率。
換言之,由於現有預對準步驟在應對薄化基板時,會因薄化基板之翹曲形成真空吸力不足、吸力不均勻的現象,造成真空吸力不足以抓緊薄化基板,會使薄化基板在預對準時發生檢測不準確及對準效率不佳,甚至發生掉片或破片的現象,又或因吸力過大產生內裂或吸痕,不論何者均會影響後續製程良率及效率,因此如何克服前述薄化基板之預對準問題,係業者及使用者所期待,亦係本發明所欲探討解決者。
有鑑於上述缺失弊端,本發明人認為具有改正之必要,遂以從事相關技術以及產品設計製造之多年經驗,秉持優良設計理念,針對以上不良處加以研究改良,經不斷努力的試作,終於成功開發一種用於薄化基板之預對準裝置及方法,藉以克服現有薄化基板在預對準時所面臨的困擾與不便。
因此,本發明之主要目的係在提供一種用於薄化基板之預對準裝置及方法,能使預對準裝置對薄化基板提供一個穩定、且均勻的吸附力,可以有效逐步拉平翹曲的薄化基板,進一步大幅提升預對準裝置對薄化基板之吸附效果,將有助於產業的利用性與實用性。
又,本發明之另一主要目的係在提供一種用於薄化基板之預對準裝置及方法,藉以能提供薄化基板穩定的抓取力,以提高薄化基板預對準時的準確度,可縮短後續製程的對準時間及減少重新對準的現象,進而提高製程效率與良率。
再者,本發明之次一主要目的係在提供一種用於
薄化基板之預對準裝置及方法,其能讓薄化基板在預對準時被有效定位,可避免薄化基板於高速旋轉預對準時發生掉片現象,以減少不必要的損失。
基於此,本發明主要係透過下列的技術手段來具體實現前述的目的與效能;其至少包含有:
一機座;
一基板平台,其係設於後述之驅動單元上,該基板平台頂面具有一供置放該薄化基板之第一接合板面,該第一接合板面內部具有可以被選擇性生成一靜電場之複數電極,且該基板平台外徑小於該薄化基板定向刻痕之範圍、且大於該薄化基板之半徑,使該薄化基板被吸附時具定向刻痕之邊緣能被支撐呈平整狀;
一驅動單元,其係設置於該機座內,且該驅動單元具有一旋轉驅動組,該旋轉驅動組具有一延伸通過該機座之輸出軸,而前述基板平台可被固定到該輸出軸端部,使得基板平台可被旋轉驅動組作動輸出軸旋轉同步帶動;
一感測器單元,其係設置於該機座上,該感測器單元具有一讀取頭,而該讀取頭具有面向基板平台上表面之光學感測器,且該光學感測器可在檢測範圍內感測該放置於基板平台之薄化基板的定向刻痕。
藉此,本發明用於薄化基板之預對準裝置及方法可以透過其基板平台之第一接合板面對薄化基板生成一靜電場,使該靜電場可將該薄化基板翹起部份逐步向下拉平,進而使該薄化基板可以完全平貼於該第一接合板面上表面、且被穩固吸附,以避免該薄化基板於旋轉預對準時發生掉片的現象,進一步能提高該薄化基板在執行預對準時的準確度,減少因無
法預對針而發生重新檢測的次數,進而提高製程效率與良率,大幅增進其實用性,進一步可增進其經濟效益。
為使 貴審查委員能進一步了解本發明的構成、特徵及其他目的,以下乃舉本發明之較佳實施例,並配合圖式詳細說明如后,同時讓熟悉該項技術領域者能夠具體實施。
S11:提供一邊緣具定向刻痕之薄化基板
S12:利用一抓取設備將上述薄化基板移入一預對準裝置中
S13:由上述預對準裝置對上述薄化基板生成一靜電場
S14:利用旋轉上述薄化基板來檢測上述定向刻
痕執行定向
S15:透過上述抓取設備預先吸附上述薄化基板後釋放上述靜電場移出該薄化基板
100:薄化基板
105:定向刻痕
106:缺口
107:平邊
10:機座
11:開口
20:基板平台
21:第一接合板面
22:電極
23:穿孔
24:頂料組
25:第二接合板面
28:牙叉開槽
30:驅動單元
31:旋轉驅動組
32:輸出軸
33:升降驅動組
34:伸桿
35:移動機構
40:感測器單元
41:讀取頭
42:光學感測器
45:移動機構
60:基板牙叉
第1圖:為現有預對準裝置使用真空吸附方式固定薄化之基板的局部剖面示意圖。
第2A圖:為具定向刻痕之薄化基板的外觀示意圖,說明其為缺口型定向刻痕之態樣。
第2B圖:為具定向刻痕之薄化基板的外觀示意圖,說明其為平邊型定向刻痕之態樣。
第3圖:為本發明之預對準裝置的外觀示意圖,供說明該預對準裝置之態樣及其相對關係。
第4圖:為本發明之預對準裝置的局部剖面示意圖,供說明其組件態樣及其相對關係。
第5圖:為本發明之預對準裝置中基板平台另一實施例的俯視平面示意圖。
第6圖:為本發明用於薄化基板之預對準方法的流程架構。
第7圖:為本發明之預對準裝置於實際使用時的第一動作參考示意圖,供說明其移入薄化基板之態樣。
第8A圖:為本發明之預對準裝置於實際使用時的第二動作參考示意圖,為說明其生成靜電場之態樣。
第8B圖:為本發明之預對準裝置於實際使用時的
第二動作另一參考示意圖,為說明其整平薄化基板之態樣。
第9圖:為本發明之預對準裝置於實際使用時的第四動作參考示意圖,供說明其旋轉檢測定向之態樣。
第10圖:為本發明之預對準裝置於實際使用時的第四動作參考示意圖,供說明其移出薄化基板之態樣。
本發明係一種用於薄化基板之預對準裝置及方法,隨附圖例示之本發明光罩保持容器的具體實施例及其構件中,所有關於前與後、左與右、頂部與底部、上部與下部、以及水平與垂直的參考,僅用於方便進行描述,並非限制本發明,亦非將其構件限制於任何位置或空間方向。圖式與說明書中所指定的尺寸,當可在不離開本發明之申請專利範圍內,根據本發明之具體實施例的設計與需求而進行變化,故在專利申請上並不受此種結構之限制。
本發明應用於薄化基板之預對準,請參照第2圖所示,該等薄化基板(100)可以是半導體晶圓、超薄濾光片等,且該等薄化基板(100)周緣具有一或一個以上之定向刻痕(105),該等定向刻痕(105)可以選自缺口(106)〔Notch〕、平邊(107)〔Flat〕或其組合,用來提高薄化基板(100)在預對準流程的準確度;
而本發明用於該薄化基板(100)之預對準裝置可以是獨立裝置或一製程處理設備的一部,供使該薄化基板(100)被定向對準後用於檢查及/或用於製程處理如印刷、雷射或切割等,至於該預對準裝置之結構組成係如第2、3圖所示,其至少包括有一機座(10)、一基板平台(20)、一驅動
單元(30)及一感測器單元(40),該機座(10)可以是一支撐機構,其可供設置該驅動單元(30)及該感測器單元(40),且該機座(10)頂面具有一開口(11),用於供該驅動單元(30)的一部分延伸通過,以組裝前述之基板平台(20),且允許該驅動單元(30)與該感測器單元(40)間的相對移動,再者該機座(10)可以是能被獨立固定於地面或桌面之型態、又或被安裝到一製程處理設備的機體之型態;
而該基板平台(20)被安裝在該驅動單元(30)穿出該機座(10)的部份頂面,且該基板平台(20)頂面具有一供置放該薄化基板(100)之第一接合板面(21),該第一接合板面(21)內部具有可以被選擇性生成一靜電場之複數電極(22)〔如第4圖所示〕,供連通一靜電生成控制單元〔圖中未示〕選擇性提供生成靜電場之電源,以利用該等電極(22)生成之靜電場提供該第一接合板面(21)相對該薄化基板(100)的吸附力,可防止薄化基板(100)相對於該第一接合板面(21)移動,且該基板平台(20)外徑小於該薄化基板(100)定向刻痕(105)之範圍、且大於該薄化基板(100)直徑的三分之一,使該薄化基板(100)被該基板平台(20)之第一接合板面(21)靜電場吸附時,該薄化基板(100)具定向刻痕(105)之邊緣能被支撐呈平整狀。又根據某些實施例,該基板平台(20)具有一被選擇性升降承接該薄化基板(100)之頂料組(24),其中該頂料組(24)可以是位於基板平台(20)軸心之單柱型態或分別於該基板平台(20)之等角等距多柱型態如三柱結構。而單柱型態之頂料組(24)係於該基板平台(20)軸心形成有一貫穿該第一接合板面(21)之穿孔(23),且該可被選擇性升降之頂料組(24)設於該穿孔(23)內,以供上
升承接該薄化基板(100)〔如第7圖所示〕,且該頂料組(24)之頂面具有一第二接合板面(25),又該第二接合板面(25)內部具有可以被選擇性生成一靜電場之複數電極(22)〔如第4圖所示〕,以利用該等電極(22)生成之靜電場提供該第二接合板面(25)相對該薄化基板(100)的吸附力,可防止薄化基板(100)相對於該第二接合板面(25)移動,且該第二接合板面(25)頂面之高度低於或等於該第一接合板面(21)之頂面,當該第二接合板面(25)頂面高度與該第一接合板面(21)頂面高度相等時,前述之第一、二接合板面(21、25)可以被同步旋轉。再者如第5圖所示,根據某些實施例,該基板平台(20)於相對軸心兩側分別形成有一相對邊緣開口之牙叉開槽(28),可供基板抓取設備如機械手臂〔Robot〕之一基板牙叉(60)〔Fork或End-effector〕伸入;
又該驅動單元(30)係設置於該機座(10)內,且該驅動單元(30)具有一旋轉驅動組(31),該旋轉驅動組(31)具有一延伸通過該機座(10)開口(11)之輸出軸(32),而前述基板平台(20)可被固定到該輸出軸(32)端部,使得基板平台(20)可被旋轉驅動組(31)作動輸出軸(32)旋轉同步帶動,且該基板平台(20)與作動該第一接合板面(21)電極(22)生成靜電場之靜電生成控制單元間可透過如集電滑環〔Slip Ring,又稱為電氣旋轉接頭〕保持旋轉狀導通。另根據某些實施例,當該基板平台(20)內具有頂料組(24)時,該驅動單元(30)進一步包含有一升降驅動組(33),該升降驅動組(33)具有一延伸通過該基板平台(20)穿孔(23)之伸桿(34),而該頂料組(24)可被固定到該伸桿(34)端部,使得該頂料組(24)可被升降驅動組(33)作動上、下升降位
移。再者該驅動單元(30)可以透過一移動機構(35)設置於該機座(10)上,如使用馬達與導螺桿來移動與定位的滑軌組,使得該驅動單元(30)可帶動該基板平台(20)相對該感測器單元(40)選擇性位移,且該移動機構(35)進一步可以令該驅動單元(30)相對該機座(10)呈X軸、Y軸、Z軸或其組合之選擇性移動;
再者,該感測器單元(40)係設置於該機座(10)上對應基板平台(20)邊緣的一側,使其被用來檢測被置放在基板平台(20)上的薄化基板(100),該感測器單元(40)可以是光學式、影像式或機械式之檢測技術,本發明之該感測器單元(40)包括有一讀取頭(41),而該讀取頭(41)具有面向基板平台(20)上表面之光學感測器(42),且該光學感測器(42)可在檢測範圍內感測該薄化基板(100)之邊緣定向刻痕(105),使得該感測器單元(40)可以檢出該基板平台(20)上薄化基板(100)之定向刻痕(105)如缺口或平邊,供該薄化基板(100)用於檢查及/或用於製程處理之預對準,又該光學感測器(42)可以透過一移動機構(45)設置於該讀取頭(41)內,如使用馬達與導螺桿來移動與定位的滑軌組,使得該光學感測器(42)可相對該薄化基板(100)選擇性上、下位移,以調整其檢測薄化基板(100)之定向刻痕(105)的焦距;
藉此,使得薄化基板(100)能被基板平台(20)之第一接合板面(21)所生成的靜電場作用,而能讓該薄化基板(100)被有效平貼吸附於該基板平台(20)上,而組構成一可使薄化基板(100)被有效平整、且穩固定位之預對準裝置者,以提高薄化基板(100)於預對準時定向之檢測準確性
及檢測效率。
而本發明之預對準裝置在執行一薄化基板(100)的預對準程序時,則係如第6圖之流程架構所揭示,其執行步驟包含有提供一邊緣具定向刻痕之薄化基板(S11)、利用一抓取設備將上述薄化基板移入一預對準裝置中(S12)、由上述預對準裝置對上述薄化基板生成一靜電場(S13)、利用旋轉上述薄化基板來檢測上述定向刻痕執行定向(S14);以及透過上述抓取設備預先吸附上述薄化基板後釋放上述靜電場移出該薄化基板(S15),供利用檢測該薄化基板(100)邊緣之定向刻痕(105)進行該薄化基板(100)的定向;
至於本發明預對準方法之步驟詳細說明,則係如第6~10圖所揭示者,其中:
步驟(S11)、提供一邊緣具定向刻痕之薄化基板:提供一欲進行檢查及/或製程處理之薄化基板(100),該薄化基板(100)邊緣具有至少一定向刻痕(105),以執行該薄化基板(100)預對準之定向程序;
步驟(S12)、利用一抓取設備將上述薄化基板移入一預對準裝置中:使用一抓取設備如機械手臂〔Robot〕之一基板牙叉(60)吸附上述之薄化基板(100),且將該薄化基板(100)置放於該預對準裝置之基板平台(20)頂面上。根據某些實施例,如第7圖所示,該抓取設備在移入該薄化基板(100)放置於該基板平台(20)時,係利用該驅動單元(30)之升降驅動組(33)作動該基板平台(20)之頂料組(24)上升,且該抓取設備操控基板牙叉(60)將該薄化基板(100)置於該頂料組(24)之第二接合板面(25)上,並由該第二接合板面(25)生成靜電場吸附該薄化基板(100),且令該基
板牙叉(60)釋放該薄化基板(100)後由其下方移出,使得該頂料組(24)可以下降將該薄化基板(100)放置於該基板平台(20)之第一接合板面(21)表面。又根據某些實施例,該抓取設備在移入該薄化基板(100)放置於該基板平台(20)時,如該基板平台(20)具有牙叉開槽(28)時〔如第五圖所示〕,則該抓取設備操控基板牙叉(60)透過伸入該基板平台(20)之牙叉開槽(28)將該薄化基板(100)置於該基板平台(20)之第一接合板面(21)上,且令該基板牙叉(60)釋放該薄化基板(100)後由其下方之牙叉開槽(28)移出;
步驟(S13)、由上述預對準裝置對上述薄化基板生成一靜電場:當該薄化基板(100)置於該基板平台(20)之第一接合板面(21)頂面時,可以透過該靜電生成控制器作動該第一接合板面(21)內之電極(22)生成靜電場,如第8A圖所示,該靜電場可將該薄化基板(100)翹起之部份逐步下拉,使原本翹曲高度超過靜電場範圍之部份也會逐步進入靜電場範圍內,最終如第8B圖所示,該薄化基板(100)可以完全平貼於該第一接合板面(21)上表面,使該薄化基板(100)被穩固吸附於該基板平台(20)上,且該薄化基板(100)超出該基板平台(20)範圍之邊緣部份因受到內緣部份支撐亦能保持平整;
步驟(S14)、利用旋轉上述薄化基板來檢測上述定向刻痕執行定向:如第9圖所示,當該薄化基板(100)被平整吸附於該基板平台(20)之第一接合板面(21)後,可以選擇性利用移動該驅動單元(30)來依需求調整該基板平台(20)上的薄化基板(100),使該薄化基板(100)具定向刻痕(105)之邊緣進入該感測器單元(40)之讀取頭(41)光學感測器(42)
範圍內,且進一步依需求調整該讀取頭(41)之光學感測器(42)高度,進而透過該驅動單元(30)之旋轉驅動組(31)轉動該基板平台(20)帶動該薄化基板(100)同步旋轉,以利用該感測器單元(40)之光學感測器(42)檢測該薄化基板(100)之定向刻痕(105),而進行該薄化基板(100)之預對準定向;以及
步驟(S15)、透過上述抓取設備預先吸附上述薄化基板後釋放上述靜電場移出該薄化基板:利用一抓取設備將上述薄化基板移入一預對準裝置中:於完成該薄化基板(100)預對準之定向後,可以使用前述抓取設備之基板牙叉(60)吸附該薄化基板(100),且將該薄化基板(100)移出用於檢查及/或用於製程處理。另根據某些實施例,如第10圖所示,該抓取設備在移出該薄化基板(100)時,係作動該基板平台(20)頂料組(24)之第二接合板面(25)生成靜電場吸附該薄化基板(100)〔如頂料組(24)第二接合板面(25)係低於該第一接合板面(21)時,則可令該頂料組(24)局部上升,使第一、二接合板面(21、25)呈同一平面〕,令該基板平台(20)之第一接合板面(21)消除靜電場,並由該驅動單元(30)之升降驅動組(33)作動伸桿(34)帶動該頂料組(24)將該薄化基板(100)上移,使該抓取設備之基板牙叉(60)可由該薄化基板(100)下方伸入吸附該薄化基板(100),令該基板牙叉(60)將該薄化基板(100)移出用於檢查及/或用於製程處理。再者根據某些實施例,當該基板平台(20)具有牙叉開槽(28)時,則該抓取設備操控基板牙叉(60)透過伸入該基板平台(20)之牙叉開槽(28)內吸附該薄化基板(100),之後令該基板平台(20)之第一接合板面(21)消除靜電場,
使得該基板牙叉(60)可以移出該薄化基板(100)用於檢查及/或用於製程處理。
經由上述之說明,本發明用於薄化基板之預對準裝置及方法微影方法利用其基板平台(20)之第一接合板面(21)能依需求對應放置於其上之薄化基板(100)生成一靜電場,使該靜電場可將該薄化基板(100)翹起部份逐步向下拉平,令原本翹曲高度超過靜電場範圍之部份也會逐步進入靜電場範圍內,進而使該薄化基板(100)可以完全平貼於該第一接合板面(21)上表面、且被穩固吸附,以避免該薄化基板(100)於旋轉預對準時發生掉片的現象,進一步能提高該薄化基板(100)在執行預對準時的準確度,減少因無法預對針而發生重新檢測的次數,進而提高製程效率與良率,大幅增進其實用性。
綜上所述,可以理解到本發明為一創意極佳之新型創作,除了有效解決習式者所面臨的問題,更大幅增進功效,且在相同的技術領域中未見相同或近似的產品創作或公開使用,同時具有功效的增進,故本發明已符合新型專利有關「新穎性」與「進步性」的要件,乃依法提出申請新型專利。
100:薄化基板
10:機座
20:基板平台
21:第一接合板面
22:電極
23:穿孔
24:頂料組
25:第二接合板面
30:驅動單元
31:旋轉驅動組
32:輸出軸
33:升降驅動組
34:伸桿
35:移動機構
40:感測器單元
41:讀取頭
42:光學感測器
45:移動機構
Claims (10)
- 一種用於薄化基板之預對準裝置,供檢測一具定向刻痕之薄化基板執行定向,其至少包含有:一機座;一基板平台,其係設於後述之驅動單元上,該基板平台頂面具有一供置放該薄化基板之第一接合板面,該第一接合板面內部具有可以被選擇性生成一靜電場之複數電極;一驅動單元,其係設置於該機座內,且該驅動單元具有一旋轉驅動組,該旋轉驅動組具有一延伸通過該機座之輸出軸,而前述基板平台可被固定到該輸出軸端部,使得基板平台可被旋轉驅動組作動輸出軸旋轉同步帶動;一感測器單元,其係設置於該機座上,該感測器單元具有一讀取頭,而該讀取頭具有面向基板平台上表面之光學感測器,且該光學感測器可在檢測範圍內感測該放置於基板平台之薄化基板的定向刻痕;藉此,使得薄化基板能被基板平台之第一接合板面所生成的靜電場作用,而能讓該薄化基板被有效平貼吸附於該基板平台上,以執行該薄化基板之定向。
- 依請求項1所述之用於薄化基板之預對準裝置,其中該預對準裝置可以是一製程處理設備的一部。
- 依請求項1所述之用於薄化基板之預對準裝置,其中該基板平台外徑小於該薄化基板定向刻痕之範圍、且大於該薄化基板直徑的三分之一,使該薄化基板被吸附時具定向刻痕之邊緣能被支撐呈平整狀。
- 依請求項1所述之用於薄化基板之預對準裝置,其中該基板平台具有一被選擇性升降承接該薄化基板之頂料組。
- 依請求項4所述之用於薄化基板之預對準裝置,其中該頂料組可以是位於基板平台軸心形成有一貫穿該第一接合板面之穿孔,且該可被選擇性升降之頂料組設於該穿孔內,而該驅動單元進一步包含有一升降驅動組,該升降驅動組具有一延伸通過該基板平台穿孔之伸桿,而該頂料組可被固定到該伸桿端部,使得該頂料組可被升降驅動組作動上、下升降位移供接收該薄化基板放置於該第一接合板面上。
- 依請求項5所述之用於薄化基板之預對準裝置,其中該頂料組之頂面具有一可被選擇性生成一靜電場之第二接合板面。
- 依請求項1所述之用於薄化基板之預對準裝置,其中該基板平台於相對軸心兩側分別形成有一相對邊緣開口之牙叉開槽,可供一基板抓取設備之一基板牙叉伸入。
- 依請求項1所述之用於薄化基板之預對準裝置,其中該驅動單元可以透過一移動機構設置於該機座上,使得該驅動單元被允許相對該感測器單元呈X軸、Y軸、Z軸或其組合之選擇性位移。
- 一種用於薄化基板之預對準裝置,供檢測一具定向刻痕之薄化基板執行定向,其具有一機座,且該機座上設有被允許選擇性相對位移之一驅動單元及一感測器單元,其該驅動單元具有延伸通過該機座、且被旋轉之一輸出軸,而該輸出軸上設有一被用於放置該薄化基板之基板 平台,該基板平台可以被選擇性生成一吸附該薄化基板之靜電場,又該感測器單元可在檢測範圍內檢知該放置於基板平台之薄化基板的定向刻痕,以執行該薄化基板預對準之定向。
- 一種用於薄化基板之預對準方法,其方法步驟包含有提供一邊緣具定向刻痕之薄化基板、利用一抓取設備將上述薄化基板移入一預對準裝置中、由上述預對準裝置對上述薄化基板生成一靜電場、利用旋轉上述薄化基板來檢測上述定向刻痕執行定向、以及透過上述抓取設備預先吸附上述薄化基板後釋放上述靜電場移出該薄化基板。
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TW111101958A TW202331914A (zh) | 2022-01-18 | 2022-01-18 | 用於薄化基板之預對準裝置及方法 |
CN202210857922.9A CN116504699A (zh) | 2022-01-18 | 2022-07-20 | 用于薄化基板的预对准装置及方法 |
CN202221884026.3U CN218525557U (zh) | 2022-01-18 | 2022-07-20 | 用于薄化基板的预对准装置 |
US18/154,104 US20230230867A1 (en) | 2022-01-18 | 2023-01-13 | Pre-aligner |
DE102023100811.0A DE102023100811A1 (de) | 2022-01-18 | 2023-01-15 | Vorausrichter |
KR1020230007379A KR20230111595A (ko) | 2022-01-18 | 2023-01-18 | 프리얼라이너 |
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KR (1) | KR20230111595A (zh) |
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TW (1) | TW202331914A (zh) |
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- 2022-07-20 CN CN202221884026.3U patent/CN218525557U/zh active Active
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- 2023-01-15 DE DE102023100811.0A patent/DE102023100811A1/de active Pending
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CN218525557U (zh) | 2023-02-24 |
CN116504699A (zh) | 2023-07-28 |
US20230230867A1 (en) | 2023-07-20 |
DE102023100811A1 (de) | 2023-07-20 |
KR20230111595A (ko) | 2023-07-25 |
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