TW202330963A - Sputtering target, target assembly and manufacturing method of the target assembly - Google Patents

Sputtering target, target assembly and manufacturing method of the target assembly Download PDF

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TW202330963A
TW202330963A TW111126821A TW111126821A TW202330963A TW 202330963 A TW202330963 A TW 202330963A TW 111126821 A TW111126821 A TW 111126821A TW 111126821 A TW111126821 A TW 111126821A TW 202330963 A TW202330963 A TW 202330963A
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Taiwan
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target
ring
back plate
welding
target body
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TW111126821A
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Chinese (zh)
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大岩一彥
姚科科
山田浩
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大陸商浙江最成半導體科技有限公司
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Publication of TW202330963A publication Critical patent/TW202330963A/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00Electron-beam welding or cutting
    • B23K15/0046Welding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/12Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding
    • B23K20/122Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding using a non-consumable tool, e.g. friction stir welding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3423Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3435Target holders (includes backing plates and endblocks)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491Manufacturing of targets

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

The invention discloses a sputtering target, which comprises a target body; the side surface of the target body protrudes outward to form an annular convex portion; The back of the convex portion protrudes. The invention also discloses a target assembly, which includes the sputtering target, a back plate ring arranged on the back of the annular convex portion, and a front ring optionally arranged on the front surface of the annular convex portion. The invention also discloses a manufacturing method of the target assembly. The annular convex part is welded with the back plate ring, or the back plate ring and the front ring, and the welding head is inserted from the back of the back plate ring near the outer side until it contacts or extends into the annular convex part or the front ring, and the welding head gradually moves to the inner side of the back plate ring during the welding process.

Description

濺射靶材、靶材元件及靶材元件的製作方法Sputtering target, target element and method for manufacturing target element

本發明涉及濺射靶材技術領域,具體涉及一種濺射靶材、靶材元件及靶材元件的製作方法。The invention relates to the technical field of sputtering targets, in particular to a sputtering target, a target element and a method for manufacturing the target element.

背板和濺射靶材一體成型的靶材元件中,由於背板部分由高純度材料構成,導致背板部分強度不能達到設計或使用的要求。可在背板部設置另外的合金材料,提高成品靶材的背板部分的強度。In the target element in which the back plate and the sputtering target are integrally formed, since the back plate part is made of high-purity materials, the strength of the back plate part cannot meet the design or use requirements. Additional alloy materials can be placed on the back plate to increase the strength of the back plate part of the finished target.

現有技術中,靶材和背板的焊接方式有攪拌摩擦焊(FSW)、電子束焊接(EBW)等,例如,公開號為CN 111660003 A、CN 111496366 A的專利說明書便公開了上述焊接方法。In the prior art, the welding methods of the target and the back plate include friction stir welding (FSW), electron beam welding (EBW), etc. For example, patent specifications with publication numbers CN 111660003 A and CN 111496366 A disclose the above welding methods.

公開號為CN 113529030 A的專利說明書公開了一種靶材元件及其製作方法,該靶材元件包括:靶材和背板,背板設置於靶材的週邊,靶材的濺射面相對於背板的前端表面凸出。其製作方法包括以下步驟:將靶材的週邊與背板接合,使得背板位於靶材的週邊,將焊接用鑽頭從靶材週邊與背板的接合中心線向背板側偏移預設的距離,將靶材的週邊與背板進行焊接接合。從該專利技術的焊接製作方式可知,焊接區域窄且位置主要集中在靶材本體部分,影響靶材本體部分的晶相結構、晶粒大小,而且,由於焊接區域面積較小,焊接結合強度仍有待進一步提高。The patent specification with the publication number CN 113529030 A discloses a target element and its manufacturing method. The target element includes: a target and a back plate, the back plate is arranged around the target, and the sputtering surface of the target is opposite to the back plate The front surface is convex. The manufacturing method includes the following steps: bonding the periphery of the target to the back plate, so that the back plate is located at the periphery of the target, and offsetting the welding drill from the joint centerline between the periphery of the target and the back plate to the back plate side by a preset distance , weld the periphery of the target to the back plate. From the welding production method of this patented technology, it can be seen that the welding area is narrow and its position is mainly concentrated in the target body, which affects the crystal phase structure and grain size of the target body. Moreover, due to the small welding area, the welding bonding strength remains the same. It needs to be further improved.

針對現有技術中存在的上述不足,本發明提供一種濺射靶材、靶材元件及靶材元件的製作方法,對用於濺射的靶材本體損傷小,不影響靶材本體濺射部分的晶相結構、晶粒大小等物理化學狀態和性質,焊接部位主要在用於與基台法蘭固定連接的連接部,焊接面大,背板環、正面環與濺射靶材的結合強度高。In view of the above-mentioned deficiencies in the prior art, the present invention provides a sputtering target, a target element and a method for manufacturing the target element, which has little damage to the target body used for sputtering and does not affect the sputtering part of the target body. Crystal phase structure, grain size and other physical and chemical states and properties, the welding part is mainly at the connection part used for fixed connection with the flange of the abutment, the welding surface is large, and the bonding strength between the back plate ring, the front ring and the sputtering target is high .

具體技術方案如下:The specific technical scheme is as follows:

一種濺射靶材,包括靶材本體;A sputtering target, including a target body;

靶材本體側面外凸形成環形凸部;The side of the target body protrudes outward to form an annular convex part;

靶材本體的正面相對於環形凸部的正面凸出,靶材本體的背面相對於環形凸部的背面凸出。The front of the target body protrudes relative to the front of the annular protrusion, and the back of the target body protrudes relative to the back of the annular protrusion.

本發明濺射靶材的環形凸部可與背板環,或,背板環和正面環,焊接成型後整體作為高強度的連接部與基台法蘭固定連接。The annular convex part of the sputtering target of the present invention can be fixedly connected with the back plate ring, or, the back plate ring and the front ring, as a high-strength connection part and the flange of the abutment after welding and forming.

本發明中,靶材本體的正面為用於濺射的面,靶材本體的背面為與濺射面相對的另一面。環形凸部位於靶材本體的正面和背面之間,其正面為相對而言更靠近靶材本體濺射面的面,其背面為與環形凸部正面相對的、相對而言更靠近靶材本體背面的面。In the present invention, the front surface of the target body is the surface used for sputtering, and the back surface of the target body is the other surface opposite to the sputtering surface. The annular protrusion is located between the front and back of the target body, the front is relatively closer to the sputtering surface of the target body, and the back is opposite to the front of the annular protrusion and relatively closer to the target body The back side.

基於上述形狀結構的濺射靶材,本發明還提供了一種靶材元件,包括所述的濺射靶材和設置在環形凸部背面的背板環,可以提高與基台法蘭之間的結合牢固度。Based on the sputtering target with the above shape and structure, the present invention also provides a target element, including the sputtering target and the back plate ring arranged on the back of the annular convex part, which can improve the distance between the sputtering target and the base flange. Bonding firmness.

背板環優選採用與濺射靶材不同的合金材料以提高強度,以便能更牢固地安裝在基臺上。The backplate ring is preferably made of an alloy material different from that of the sputtering target to improve strength so that it can be more firmly installed on the base.

在一優選例中,所述的靶材組件,背板環的外側面與環形凸部的外側面齊平。In a preferred example, in the target assembly, the outer surface of the back plate ring is flush with the outer surface of the annular protrusion.

在一優選例中,所述的靶材組件,背板環的背面與靶材本體的背面齊平。In a preferred example, in the target assembly, the back of the back plate ring is flush with the back of the target body.

本發明中,背板環的正面指的是與環形凸部背面接觸的面,與背板環的正面相對的另一面即為背板環的背面。In the present invention, the front side of the backplate ring refers to the surface in contact with the backside of the annular protrusion, and the other side opposite to the front side of the backplate ring is the backside of the backplate ring.

在一優選例中,所述的靶材組件,背板環的內側面與靶材本體位於環形凸部背後的外側面相適配。In a preferred example, in the target assembly, the inner side of the back plate ring matches the outer side of the target body behind the annular protrusion.

所述的靶材組件還可包括設置在環形凸部正面的正面環。The target assembly may further include a front ring disposed on the front of the annular protrusion.

本發明中,環形凸部所在的位置是用於與基台法蘭固定連接的,連接方式可以是打孔螺栓固定連接。正面環、背板環的同時設置可以起到協同補強的作用,使靶材元件與基台法蘭的連接部位形成的一個高強度的整體部件,進一步提高靶材元件與基台法蘭的連接強度。In the present invention, the position of the annular protrusion is used for fixed connection with the flange of the abutment, and the connection method may be fixed connection with punching bolts. The simultaneous setting of the front ring and the back plate ring can play a role of synergistic reinforcement, so that the connection between the target element and the abutment flange forms a high-strength integral part, and further improves the connection between the target element and the abutment flange strength.

在一優選例中,所述的靶材組件,正面環的外側面與環形凸部的外側面齊平。In a preferred example, in the target assembly, the outer surface of the front ring is flush with the outer surface of the annular protrusion.

在一優選例中,所述的靶材組件,靶材本體的正面與正面環的正面齊平,或靶材本體的正面相對於正面環的正面凸出。In a preferred example, in the target assembly, the front of the target body is flush with the front of the front ring, or the front of the target body protrudes relative to the front of the front ring.

本發明中,正面環的背面指的是與環形凸部正面接觸的面,與正面環的背面相對的另一面即為正面環的正面。In the present invention, the back of the front ring refers to the face in contact with the front of the annular protrusion, and the other side opposite to the back of the front ring is the front of the front ring.

在一優選例中,所述的靶材組件,正面環的內側面與靶材本體位於環形凸部前面的外側面相適配。In a preferred example, in the target assembly, the inner surface of the front ring is adapted to the outer surface of the target body located in front of the annular protrusion.

在一優選例中,所述的靶材組件,正面環的材質與背板環的材質相同,可進一步提高靶材元件連接部的強度。In a preferred example, in the target assembly, the material of the front ring is the same as that of the back plate ring, which can further increase the strength of the connection part of the target element.

本發明還提供了所述的靶材元件的製作方法,焊接部位集中在環形凸部區域(用於與基台法蘭固定連接的連接部),對用於濺射的靶材本體損傷小,不影響靶材本體濺射部分的晶相結構、晶粒大小等物理化學狀態和性質,焊接面大,背板環、正面環與濺射靶材的結合強度高。The present invention also provides the manufacturing method of the target element, the welding parts are concentrated in the area of the annular convex part (the connection part used for the fixed connection with the flange of the abutment), and the damage to the target body used for sputtering is small, It does not affect the physical and chemical state and properties such as the crystal phase structure and grain size of the sputtering part of the target body, the welding surface is large, and the bonding strength between the back plate ring, the front ring and the sputtering target is high.

所述的靶材元件無正面環時,其製作方法包括:將環形凸部與背板環進行焊接接合,焊接頭自背板環背面靠近外側面插入直至接觸或伸入環形凸部,焊接過程中焊接頭逐漸向背板環內側面移動。When the target element has no front ring, its manufacturing method includes: welding and joining the annular protrusion and the back plate ring, inserting the welding head from the back of the back plate ring close to the outer surface until it contacts or extends into the annular protrusion, and the welding process The middle welding head gradually moves towards the inner side of the backplate ring.

所述的靶材元件還包括正面環時,其製作方法包括:將環形凸部與背板環、正面環進行焊接接合,焊接頭自背板環背面靠近外側面插入直至接觸或伸入正面環,焊接過程中焊接頭逐漸向背板環內側面移動。When the target element also includes a front ring, the manufacturing method includes: welding the annular protrusion with the back plate ring and the front ring, and inserting the welding head from the back of the back plate ring close to the outer surface until it contacts or extends into the front ring , the welding head gradually moves to the inner side of the backplate ring during the welding process.

本發明所述的靶材元件的製作方法,可採用攪拌摩擦焊或電子束焊接的方式進行焊接接合。The manufacturing method of the target element according to the present invention can adopt friction stir welding or electron beam welding for welding and joining.

本發明所述的靶材元件的製作方法,焊接過程中焊接頭逐漸向背板環內側面移動至與靶材本體接觸後,繼續向靶材本體移動同時逐漸減小焊接頭的插入深度,可進一步提高與靶材本體的結合強度,並盡可能地減少對靶材本體的晶相結構、晶粒大小等物理化學狀態和性質的影響。In the manufacturing method of the target element according to the present invention, during the welding process, the welding head gradually moves to the inner surface of the back plate ring until it contacts the target body, and then continues to move to the target body while gradually reducing the insertion depth of the welding head, which can further Improve the bonding strength with the target body, and minimize the impact on the physical and chemical states and properties of the target body, such as crystal phase structure and grain size.

本發明的靶材元件在使用前,還可以通過切削等方式製成所需形狀、結構。The target element of the present invention can also be made into a desired shape and structure by cutting or other means before use.

本發明與現有技術相比,主要優點包括:Compared with the prior art, the present invention has main advantages including:

本發明提供了一種濺射靶材、靶材元件及靶材元件的製作方法,對用於濺射的靶材本體損傷小,不影響靶材本體濺射部分的晶相結構、晶粒大小等物理化學狀態和性質,焊接部位主要在用於與基台法蘭固定連接的連接部,焊接面大,背板環、正面環與濺射靶材的結合強度高。The invention provides a sputtering target, a target element and a manufacturing method of the target element, which has little damage to the target body used for sputtering and does not affect the crystal phase structure and grain size of the sputtering part of the target body. The physical and chemical state and properties, the welding part is mainly used for the fixed connection with the abutment flange, the welding surface is large, and the bonding strength between the back plate ring, the front ring and the sputtering target is high.

現有技術通常只在濺射靶材和背板交界處焊接,這種焊接方式一方面濺射靶材和背板的結合強度仍有待進一步提高,另一方面焊接區域窄小,在實際真空濺射過程中接縫處容易產生漏氣、漏水等問題。本發明將濺射靶材的環形凸部與背板環,或背板環和正面環,進行體相一體焊接成型,不僅結合更為牢固,而且焊接密封性更好,解決了漏氣、漏水等問題。The existing technology usually only welds at the junction of the sputtering target and the back plate. On the one hand, the bonding strength between the sputtering target and the back plate needs to be further improved, and on the other hand, the welding area is narrow. During the process, problems such as air leakage and water leakage are likely to occur at the seams. In the present invention, the ring-shaped convex part of the sputtering target and the back plate ring, or the back plate ring and the front ring are integrally welded and formed, which not only combines more firmly, but also has better welding sealing performance, which solves the problem of air leakage and water leakage. And other issues.

下面結合附圖及具體實施例,進一步闡述本發明。應理解,這些實施例僅用於說明本發明而不用於限制本發明的範圍。下列實施例中未注明具體條件的操作方法,通常按照常規條件,或按照製造廠商所建議的條件。The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments. It should be understood that these examples are only used to illustrate the present invention and are not intended to limit the scope of the present invention. The operating methods not indicated in the following examples are generally in accordance with conventional conditions, or in accordance with the conditions suggested by the manufacturer.

實施例Example 11

本實施例具體介紹本發明的濺射靶材,其結構示意如圖1所示。This embodiment specifically introduces the sputtering target of the present invention, and its structure is shown in FIG. 1 .

濺射靶材包括靶材本體1。The sputtering target includes a target body 1 .

靶材本體1側面外凸形成環形凸部2;The side surface of the target body 1 protrudes outward to form an annular convex portion 2;

靶材本體1的正面相對於環形凸部2的正面凸出,靶材本體1的背面相對於環形凸部2的背面凸出。The front of the target body 1 protrudes relative to the front of the annular protrusion 2 , and the back of the target body 1 protrudes relative to the back of the annular protrusion 2 .

靶材本體1的厚度為D,環形凸部2的厚度為d1,環形凸部2背面與靶材本體1背面的距離為d2,環形凸部2的寬度為S。The thickness of the target body 1 is D, the thickness of the annular convex portion 2 is d1, the distance between the back of the annular convex portion 2 and the back of the target body 1 is d2, and the width of the annular convex portion 2 is S.

實施例Example 22

本實施例具體介紹本發明的靶材元件的其中一種結構、製作過程和相應的產品。This embodiment specifically introduces one structure, manufacturing process and corresponding products of the target element of the present invention.

靶材元件的結構如圖2中的上圖所示,包括如實施例1介紹的濺射靶材和設置在環形凸部2背面的背板環3。The structure of the target element is shown in the upper figure of FIG. 2 , including the sputtering target as described in Embodiment 1 and the back plate ring 3 arranged on the back of the annular convex portion 2 .

背板環3的外側面與環形凸部2的外側面齊平。The outer surface of the back plate ring 3 is flush with the outer surface of the annular protrusion 2 .

背板環3背面與靶材本體1背面齊平。The back of the back plate ring 3 is flush with the back of the target body 1 .

背板環3的內側面與靶材本體1位於環形凸部2背後的外側面相適配。The inner side of the back plate ring 3 is adapted to the outer side of the target body 1 behind the annular protrusion 2 .

濺射靶材的材質可以為純鋁、鋁銅合金、鋁矽合金、銅矽鋁合金中的任意一種。The material of the sputtering target can be any one of pure aluminum, aluminum-copper alloy, aluminum-silicon alloy, and copper-silicon-aluminum alloy.

背板環3的材質可以為A5000系列鋁、A6000系列鋁、A2000系列鋁中的任意一種。The material of the back plate ring 3 can be any one of A5000 series aluminum, A6000 series aluminum and A2000 series aluminum.

本實施例的靶材組件製作過程如圖2中的上圖所示,將環形凸部2與背板環3進行焊接接合,焊接頭5自背板環3背面靠近外側面插入直至接觸或伸入環形凸部2,焊接過程中焊接頭5逐漸向背板環3內側面移動,在焊接頭5與靶材本體1接觸後,繼續向靶材本體1移動同時逐漸減小焊接頭5的插入深度。焊接完成後,進行適應性切削,即可得到可用於濺射的靶材元件產品,如圖2中的下圖所示。The manufacturing process of the target assembly in this embodiment is shown in the upper figure in FIG. 2. The annular convex part 2 and the back plate ring 3 are welded together, and the welding head 5 is inserted from the back of the back plate ring 3 close to the outer surface until it contacts or extends. During the welding process, the welding head 5 gradually moves to the inner side of the back plate ring 3. After the welding head 5 contacts the target body 1, it continues to move toward the target body 1 while gradually reducing the insertion depth of the welding head 5. . After the welding is completed, adaptive cutting is performed to obtain the target element product that can be used for sputtering, as shown in the lower figure in Figure 2.

焊接頭5在靶材本體1內的移動距離可以是0.1~3 mm。The moving distance of the welding head 5 in the target body 1 can be 0.1-3 mm.

上述製作過程中,可採用攪拌摩擦焊或電子束焊接的方式進行焊接接合。In the above manufacturing process, friction stir welding or electron beam welding may be used for welding and joining.

實施例Example 33

本實施例具體介紹本發明的靶材元件的另一種結構、製作過程和相應的產品。This embodiment specifically introduces another structure, manufacturing process and corresponding products of the target element of the present invention.

靶材元件的結構如圖3中的上圖所示,包括如實施例1介紹的濺射靶材、設置在環形凸部2背面的背板環3、設置在環形凸部2正面的正面環4。The structure of the target element is shown in the upper figure in Figure 3, including the sputtering target introduced in Example 1, the back plate ring 3 arranged on the back of the annular convex part 2, and the front ring arranged on the front of the annular convex part 2 4.

背板環3的外側面與環形凸部2的外側面齊平。The outer surface of the back plate ring 3 is flush with the outer surface of the annular protrusion 2 .

背板環3背面與靶材本體1背面齊平。The back of the back plate ring 3 is flush with the back of the target body 1 .

背板環3的內側面與靶材本體1位於環形凸部2背後的外側面相適配。The inner side of the back plate ring 3 is adapted to the outer side of the target body 1 behind the annular protrusion 2 .

濺射靶材的材質可以為純鋁、鋁銅合金、鋁矽合金、銅矽鋁合金中的任意一種。The material of the sputtering target can be any one of pure aluminum, aluminum-copper alloy, aluminum-silicon alloy, and copper-silicon-aluminum alloy.

背板環3的材質可以為A5000系列鋁、A6000系列鋁、A2000系列鋁中的任意一種。The material of the back plate ring 3 can be any one of A5000 series aluminum, A6000 series aluminum and A2000 series aluminum.

正面環4的外側面與環形凸部2的外側面齊平。The outer surface of the front ring 4 is flush with the outer surface of the annular protrusion 2 .

靶材本體1的正面與正面環4的正面齊平,或靶材本體1的正面相對於正面環4的正面凸出。The front of the target body 1 is flush with the front of the front ring 4 , or the front of the target body 1 protrudes relative to the front of the front ring 4 .

正面環4的內側面與靶材本體1位於環形凸部2前面的外側面相適配。The inner surface of the front ring 4 is adapted to the outer surface of the target body 1 located in front of the annular protrusion 2 .

正面環4的材質可與背板環3的材質相同。The material of the front ring 4 can be the same as that of the back plate ring 3 .

本實施例的靶材組件製作過程如圖3中的上圖所示,將環形凸部2與背板環3、正面環4進行焊接接合,焊接頭5自背板環3背面靠近外側面插入直至接觸或伸入正面環4,焊接過程中焊接頭5逐漸向背板環3內側面移動,在焊接頭5與靶材本體1接觸後,繼續向靶材本體1移動同時逐漸減小焊接頭5的插入深度。焊接完成後,進行適應性切削,即可得到可用於濺射的靶材元件產品,如圖3中的下圖所示。The manufacturing process of the target assembly in this embodiment is shown in the upper figure in FIG. 3 . The annular convex part 2 is welded to the back plate ring 3 and the front ring 4, and the welding head 5 is inserted from the back of the back plate ring 3 close to the outer surface. Until it touches or extends into the front ring 4, the welding head 5 gradually moves to the inner side of the back plate ring 3 during the welding process. After the welding head 5 contacts the target body 1, it continues to move toward the target body 1 while gradually reducing the welding head 5. insertion depth. After the welding is completed, adaptive cutting is performed to obtain the target element product that can be used for sputtering, as shown in the lower figure of Figure 3.

焊接頭5在靶材本體1內的移動距離可以是0.1~3 mm。The moving distance of the welding head 5 in the target body 1 can be 0.1-3 mm.

上述製作過程中,可採用攪拌摩擦焊或電子束焊接的方式進行焊接接合。In the above manufacturing process, friction stir welding or electron beam welding may be used for welding and joining.

此外應理解,在閱讀了本發明的上述描述內容之後,本領域技術人員可以對本發明作各種改動或修改,這些等價形式同樣落於本申請所附請求項所限定的範圍。In addition, it should be understood that after reading the above description of the present invention, those skilled in the art may make various changes or modifications to the present invention, and these equivalent forms also fall within the scope defined by the appended claims of the present application.

1:靶材本體 2:環形凸部 3:背板環 4:正面環 5:焊接頭 6:合金層 1: Target body 2: Annular convex part 3: Backplate ring 4: front ring 5: welding head 6: alloy layer

[圖1]為實施例1的濺射靶材的結構示意圖; [圖2]為實施例2的靶材元件的結構、製作過程和產品示意圖; [圖3]為實施例3的靶材元件的結構、製作過程和產品示意圖。 [Fig. 1] is the structural representation of the sputtering target material of embodiment 1; [Fig. 2] is the structure, manufacturing process and product schematic diagram of the target element of embodiment 2; [ FIG. 3 ] is a schematic diagram of the structure, manufacturing process and product of the target element of Example 3.

1:靶材本體 1: Target body

2:環形凸部 2: Annular convex part

Claims (10)

一種濺射靶材,其中,包括靶材本體; 靶材本體側面外凸形成環形凸部; 靶材本體的正面相對於環形凸部的正面凸出,靶材本體的背面相對於環形凸部的背面凸出。 A sputtering target, including a target body; The side of the target body protrudes outward to form an annular convex part; The front of the target body protrudes relative to the front of the annular protrusion, and the back of the target body protrudes relative to the back of the annular protrusion. 一種靶材元件,其中,包括請求項1所述的濺射靶材和設置在環形凸部背面的背板環。A target element, comprising the sputtering target described in claim 1 and a backing plate ring disposed on the back of the annular protrusion. 如請求項2所述的靶材元件,其中,該背板環的外側面與環形凸部的外側面齊平; 背板環背面與靶材本體背面齊平; 背板環的內側面與靶材本體位於環形凸部背後的外側面相適配。 The target element as claimed in claim 2, wherein the outer surface of the backplate ring is flush with the outer surface of the annular protrusion; The back of the back plate ring is flush with the back of the target body; The inner side of the back plate ring is adapted to the outer side of the target body behind the annular protrusion. 如請求項2或3所述的靶材元件,其中,所述靶材組件還包括設置在環形凸部正面的正面環。The target element according to claim 2 or 3, wherein the target assembly further includes a front ring arranged on the front face of the annular protrusion. 如請求項4所述的靶材元件,其中,正面環的外側面與環形凸部的外側面齊平; 靶材本體的正面與正面環的正面齊平,或靶材本體的正面相對於正面環的正面凸出; 正面環的內側面與靶材本體位於環形凸部前面的外側面相適配。 The target element as claimed in claim 4, wherein the outer side of the front ring is flush with the outer side of the annular protrusion; The front of the target body is flush with the front of the front ring, or the front of the target body protrudes relative to the front of the front ring; The inner side of the front ring is adapted to the outer side of the target body located in front of the annular protrusion. 如請求項4所述的靶材元件,其中,正面環的材質與背板環的材質相同。The target element according to claim 4, wherein the material of the front ring is the same as that of the back plate ring. 如請求項2或3所述的靶材元件的製作方法,其中,包括:將環形凸部與背板環進行焊接接合,焊接頭自背板環背面靠近外側面插入直至接觸或伸入環形凸部,焊接過程中焊接頭逐漸向背板環內側面移動。The manufacturing method of the target element according to claim 2 or 3, including: welding the annular protrusion and the back plate ring, the welding head is inserted from the back of the back plate ring close to the outer surface until it contacts or extends into the annular protrusion During the welding process, the welding head gradually moves to the inner side of the backplate ring. 如請求項4~6項中任一項所述的靶材元件的製作方法,其中,包括:將環形凸部與背板環、正面環進行焊接接合,焊接頭自背板環背面靠近外側面插入直至接觸或伸入正面環,焊接過程中焊接頭逐漸向背板環內側面移動。The manufacturing method of the target element according to any one of claim items 4 to 6, including: welding the annular convex part with the back plate ring and the front ring, and the welding head approaches the outer surface from the back of the back plate ring Insert until touching or protruding into the front ring, the welding head gradually moves towards the inner side of the back plate ring during the welding process. 如請求項7或8項中任一項所述的靶材元件的製作方法,其中,採用攪拌摩擦焊或電子束焊接的方式進行焊接接合。The manufacturing method of the target element according to any one of claim 7 or 8, wherein friction stir welding or electron beam welding is used for welding joint. 如請求項7或8項中任一項所述的靶材元件的製作方法,其中,焊接過程中焊接頭逐漸向背板環內側面移動至與靶材本體接觸後,繼續向靶材本體移動同時逐漸減小焊接頭的插入深度。The manufacturing method of the target element according to any one of claim 7 or 8, wherein, during the welding process, the welding head gradually moves to the inner side of the back plate ring until it contacts the target body, and then continues to move to the target body at the same time Gradually reduce the insertion depth of the solder tip.
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CN115255596A (en) * 2022-09-06 2022-11-01 浙江最成半导体科技有限公司 Target, target assembly and manufacturing method thereof
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Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2797111B2 (en) * 1989-03-27 1998-09-17 東京エレクトロン株式会社 Sputtering equipment
US5009765A (en) * 1990-05-17 1991-04-23 Tosoh Smd, Inc. Sputter target design
DE59709021D1 (en) * 1996-07-22 2003-01-30 Unaxis Balzers Ag TARGET ARRANGEMENT WITH A CIRCULAR PLATE
US6149776A (en) * 1998-11-12 2000-11-21 Applied Materials, Inc. Copper sputtering target
JP2000226650A (en) * 1999-02-08 2000-08-15 Mitsubishi Materials Corp Reinforcement ring for preventing deformation of backing plate, backing plate with the reinforcement ring, sputtering target, and their use
JP2000265265A (en) * 1999-03-12 2000-09-26 Kojundo Chem Lab Co Ltd Integrated structure type sputtering target
JP2000345330A (en) * 1999-06-02 2000-12-12 Sony Corp Sputtering target
JP2001214263A (en) * 2000-01-31 2001-08-07 Shibaura Mechatronics Corp Film deposition system
JP2001308023A (en) * 2000-04-21 2001-11-02 Tokyo Electron Ltd Equipment and method for heat treatment
JP4566367B2 (en) * 2000-09-04 2010-10-20 日鉱金属株式会社 Sputtering target with less generation of particles
US7922066B2 (en) * 2005-09-21 2011-04-12 Soleras, LTd. Method of manufacturing a rotary sputtering target using a mold
TW200617194A (en) * 2006-02-17 2006-06-01 Avail Technology Co Ltd Friction stir welding of backing plate for the sputtering targets of photo-electronic PVD
JP6277309B2 (en) * 2016-07-13 2018-02-07 住友化学株式会社 Sputtering target manufacturing method and sputtering target
CN212357372U (en) * 2020-06-01 2021-01-15 宁波江丰电子材料股份有限公司 Long-life sputtering target material assembly
CN111660003B (en) * 2020-06-22 2021-08-03 浙江最成半导体科技有限公司 Sputtering target welding method
CN212669787U (en) * 2020-07-13 2021-03-09 宁波江丰电子材料股份有限公司 Circular target subassembly
CN112916996B (en) * 2021-01-28 2023-01-03 宁波江丰电子材料股份有限公司 Electron beam welding method for circular target and annular back plate
CN113529030A (en) * 2021-08-20 2021-10-22 浙江最成半导体科技有限公司 Target material assembly and manufacturing method thereof
CN217757629U (en) * 2022-01-26 2022-11-08 浙江最成半导体科技有限公司 Sputtering target and target assembly

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