TW202320148A - Electronic component manufacturing method - Google Patents

Abstract

Provided is a method for producing an electronic component, the method including: a step of laminating a protective sheet for protecting a circuit component on at least one side of the substrate, the at least one side being a circuit surface on which the circuit component is disposed; a step of separating a layered product of the substrate and the protective sheet into small pieces at intervals from each other in a plane direction to produce small pieces of the layered product each in which a small piece of the protective sheet and a substrate chip being a small piece of the separated substrate are laminated; and a step of removing the small piece of the protective sheet laminated on the circuit surface of the substrate chip.

Description

Manufacturing method of electronic component device

The present invention relates to a manufacturing method for manufacturing electronic component devices such as semiconductor devices having semiconductor integrated circuits.

Conventionally, there is known a method of manufacturing electronic component devices used in the manufacture of semiconductor devices having semiconductor integrated circuits and the like. In the manufacturing method of such an electronic component device, for example, a semiconductor wafer as a substrate is attached to a dicing tape having a base material layer and an adhesive layer, and the dicing tape is stretched to enlarge its area, thereby dividing the semiconductor wafer. The circle makes it small into semiconductor wafers. Next, pick up the semiconductor wafer of the chipped substrate and bond it to the adherend.

Generally speaking, the manufacturing method of this kind of electronic component device includes: the first step, forming the circuit surface with highly integrated circuit components arranged on one side of the wafer; and the subsequent step, forming the semiconductor wafer with the circuit surface Semiconductor wafers are cut out and assembled.

In the latter step, for example, a fragile part is formed in the wafer to make the wafer (semiconductor wafer) formed with the circuit surface small into smaller semiconductor chips (chip, die), and on the opposite side to the circuit surface Adhesive layer of dicing tape attached to the surface. Then, the dicing tape is stretched in the plane direction while maintaining the state where the semiconductor wafer is attached to the adhesive layer of the dicing tape, so that the semiconductor wafer is divided into small pieces by using the above-mentioned weak parts as boundaries into semiconductor chips. Afterwards, the semiconductor wafer formed by dicing is peeled off from the adhesive layer of the dicing tape.

As mentioned above, the following steps include, for example: a stealth processing step, which is formed in the semiconductor wafer by laser light to form a fragile part for making the semiconductor wafer small into smaller semiconductor chips (chip, die); the mounting step, the The surface of the semiconductor wafer that is opposite to the circuit surface is attached to the dicing tape to fix the semiconductor wafer; in the expansion step, the dicing tape is stretched in the direction of the surface, thereby making the semiconductor wafer small into semiconductor chips ( chip, die); the pick-up step, peeling off the adhesive layer and taking out the semiconductor chip; and the bonding step, bonding the taken-out semiconductor chip to the adherend. A semiconductor integrated circuit is manufactured, for example, through these steps.

In the method of manufacturing an electronic component device as described above, for example, in the above-mentioned bonding step, the circuit surface of the semiconductor chip is arranged facing the object to be bonded, and the two are bonded (so-called flip-chip bonding).

As a method of manufacturing such an electronic component device, for example, a manufacturing method is known in which a semiconductor chip is bonded to a substrate via a bump protruding from the circuit surface side of the semiconductor chip and a conductive material (solder, etc.) on the surface of the substrate. Then the body is electrically connected. Specifically, as a method of manufacturing such an electronic component device, there is known a method of manufacturing an electronic component device in which a specific underfill material is arranged between a semiconductor wafer and an adherend, and a specific underfill material is arranged on the circuit surface of the semiconductor wafer. The electrode portion is electrically connected to the electrode portion of the adherend (for example, Patent Document 1).

Specifically, the manufacturing method of an electronic component device described in Patent Document 1 is a manufacturing method comprising: an adherend, a semiconductor element electrically connected to the adherend, and a space between the adherend and the semiconductor element. A method of manufacturing an electronic component device of a space bottom filling material, comprising: Preparatory step of preparing semiconductor elements with underfill materials formed by bonding specific underfill materials to the aforementioned semiconductor elements; and In the connecting step, the space between the semiconductor element and the adherend is filled with the underfill material, and the semiconductor element and the adherend are electrically connected. More specifically, the aforementioned specified underfill material has a melt viscosity at 150°C before heat treatment of 50 Pa･s to 3000 Pa･s; and When the melt viscosity at 150°C before the aforementioned heat treatment is set as η1, and the melt viscosity at 150°C after heat treatment at 130°C for 1 hour is set as η2, the viscosity change rate [(η2/η1)×100 ] is less than 500%; The total calorific value during the heating process from -50°C to 300°C in the DSC measurement is Qt, and the total calorific value during the heating process from -50°C to 300°C after heating at 175°C for 2 hours When the amount is Qh, the reaction rate {[(Qt-Qh)/Qt]×100} is 90% or more.

According to the manufacturing method of the electronic component device described in Patent Document 1, the electronic component device is manufactured using an underfill material having a specific viscosity change rate, melt viscosity, and reaction rate, so that the manufacturing efficiency can be improved. [Prior Technical Literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open No. 2015-170754

[Technical problem to be solved by the invention]

However, for example, in the above-mentioned bonding step, the gap between the adherend and the semiconductor wafer may be bonded with a smaller gap. For example, a semiconductor chip bonded to a substrate or the like may be used as an adherend, and a semiconductor chip may be further bonded to the semiconductor chip, and the same flip-chip bonding as above may be repeated to stack the semiconductor chips. In this case, for example, the electrode portions are directly connected between adjacent semiconductor wafers. Especially in the case where the electrode parts are directly connected to each other in this way, since the gap between the semiconductor chips almost disappears, if foreign matter adheres to the circuit surface of the semiconductor chip, it may be difficult to perform reliable bonding.

For example, as described above, when the semiconductor wafer of the substrate is diced into small pieces, a part of the semiconductor wafer may be formed into tiny pieces, which may adhere to the circuit surface of the semiconductor wafer or the like. Therefore, there is a need for a method of manufacturing an electronic component device capable of suppressing such foreign matter from adhering to the circuit surface of a substrate wafer such as a semiconductor wafer. Also, if a large amount of foreign matter adheres to the circuit surface of the substrate wafer such as a semiconductor wafer, the product reliability of the electronic component device composed of the substrate wafer with a large amount of foreign matter attached may be reduced regardless of whether the above-mentioned bonding step is performed. .

However, it is difficult to say that sufficient research has been done on a method of manufacturing electronic components and devices capable of suppressing foreign matter from adhering to the circuit surface of the chipped substrate wafer.

Accordingly, an object of the present invention is to provide a method of manufacturing an electronic component device capable of suppressing foreign matter from adhering to the circuit surface of a manufactured substrate wafer. [Technical means]

In order to solve the above-mentioned problems, the manufacturing method of the electronic component device of the present invention includes: A step of laminating a protective sheet for protecting the above-mentioned circuit components on at least one side of the substrate on which the circuit components are disposed; The laminate formed by stacking the aforementioned substrate and the aforementioned protective sheet is divided in the plane direction with a gap to be divided into small pieces, thereby producing a chip of the aforementioned substrate chip and a small piece of the aforementioned protective sheet stacked on top of each other. The step of forming small pieces of the aforementioned laminate; and A step of removing a small piece of the aforementioned protective sheet stacked on the circuit surface of the aforementioned substrate wafer.

The manufacturing method of the above-mentioned electronic component device may further include a step of arranging the circuit surface of the substrate wafer facing the adherend, and bonding the substrate wafer to the adherend.

In the above method of manufacturing an electronic component device, the protective sheet contains a water-soluble polymer compound; In the removing step, the plurality of small pieces of the protective sheet may be brought into contact with a liquid containing water to dissolve at least a part of each small piece in the liquid, thereby removing the plurality of small pieces of the protective sheet.

In the above method of manufacturing an electronic component device, in the removing step, the adhesive tape for peeling of the plurality of small pieces attached to the protective sheet can be peeled off, whereby the adhesive tape for peeling and the plurality of small pieces of the protective sheet can be peeled off. A small piece is removed.

In the above method of manufacturing an electronic component device, the protective sheet contains a curable composition; After the protective sheet laminated on the substrate is cured by curing treatment, the laminate of the substrate and the protective sheet may be divided into small pieces.

In the manufacturing method of the above-mentioned electronic component device, the electrode parts respectively arranged on the two surfaces of the above-mentioned substrate wafer and serving as the above-mentioned circuit constituent elements are connected to each other; In the bonding step, at least two substrate wafers may be stacked, and the electrode portion of one of the substrate wafers serving as the adherend may be directly connected to the electrode portion of the other substrate wafer.

Hereinafter, an embodiment of the manufacturing method of the electronic component device of the present invention will be described with reference to the drawings.

The manufacturing method of the electronic component device of this embodiment includes: A step of laminating a protective sheet 10 for protecting the above-mentioned circuit components on at least one side of the substrate and the circuit surface on which the circuit components are arranged (protection step); The laminate formed by stacking the above-mentioned substrate and the above-mentioned protective sheet 10 is divided in the plane direction with a gap to make it into small pieces, thereby producing a substrate wafer after the above-mentioned small pieces of the substrate and the small pieces of the above-mentioned protective sheet 10. The step of stacking small sheets of the aforementioned laminate (expansion step); and A step of removing the small pieces of the protective sheet 10 stacked on the circuit surface of the substrate wafer (removing step). The method for manufacturing an electronic component device according to this embodiment may further include a step of arranging the circuit surface of the substrate wafer facing the adherend, and bonding the substrate wafer to the adherend (bonding step).

The manufacturing method of the electronic component device of this embodiment may further include a step of increasing the humidity of the gas in contact with the circuit surface Sa (wetting step) before laminating the protective sheet on the circuit surface.

In the manufacturing method of the electronic component device of the present embodiment, at least one side of the substrate is protected by the protective sheet 10 . The protected surface (the circuit surface Sa on which the circuit components are arranged) may be only one surface of the substrate, or may be both surfaces.

As shown in the cross-sectional view of FIG. 1A , the material of the substrate S is not particularly limited as long as it is plate-shaped. Substrates include, for example, semiconductor wafers, substrates constituting CMOS (Complementary Metal Oxide Semiconductor) or MEMS (Micro Electro Mechanical Systems, microelectromechanical systems), substrates constituting dummy wafers, or wiring substrates wait. In addition, circuit components are disposed on at least one side of the substrate. The substrate surface on the side where the circuit components are disposed becomes the circuit surface. Circuit constituent elements include, for example, elements such as wiring, electrode parts, or transistors, diodes, or sensors (light-receiving sensors, vibration sensors, etc.). The circuit surface protected by the protective sheet 10 may be provided with, for example, only components or only electrodes. In other words, the circuit surface protected by the protective sheet 10 only needs to arrange at least one of the circuit constituent elements. In addition, at least one of the circuit components is covered and protected by the protective sheet 10 .

The wetting steps described above are performed as necessary. The above wetting step is particularly effective when using a protective sheet 10 (described in detail later) containing a water-soluble polymer compound. The above wetting step, for example, as shown in FIG. 1B , can be implemented by making a gas containing water vapor contact the circuit surface Sa, or spraying mist water on the circuit surface Sa, or the like. Alternatively, it can also be implemented by applying water to the circuit surface Sa. By implementing the wetting step, the adhesion of the protective sheet 10 containing the water-soluble polymer compound to the circuit surface Sa can be improved.

In the above protection step, the protection sheet 10 is stacked on the substrate surface (circuit surface) on the side where any one of the circuit components is arranged (see FIG. 1C ). In other words, the protective sheet 10 may be laminated on the circuit surface on the side where the wiring is arranged as the circuit constituent element, or the protective sheet 10 may be laminated on one surface of the substrate on the side where the sensor is arranged as the circuit constituent element, The protective sheet 10 may also be stacked on one surface of the substrate on which the electrode portion is disposed as a circuit component. In the above protection step, the circuit components are covered with the protection sheet 10 and the protection sheet 10 is stacked on at least one surface of the substrate.

As shown in FIG. 1D and FIG. 2A, the above-mentioned protective sheet 10 is formed into a sheet shape and has flexibility that can be deformed under relatively weak force. In addition, the above-mentioned protection sheet 10 has an adhesive property that can be adhered to the substrate S. As shown in FIG. In addition, the release liner 15 may be laminated on one or both surfaces of the protective sheet 10 before or during the above manufacturing steps. In addition, each drawing in the drawing is a schematic diagram, and the aspect ratio of an actual thing is not necessarily the same. The same goes for other schemas.

In the above-mentioned expanding step, for example, as shown in FIG. 1E , a substrate S having a fragile portion for dicing formed therein is prepared. Next, for example, as shown in FIG. 1F , in a state where the protective sheet 10 is arranged on one side of the substrate S, the laminate of the substrate S and the protective sheet 10 is divided into small pieces. When performing chipping, the crystal cutting tape 20 arranged on the other side of the substrate S is used, and the crystal cutting tape 20 is stretched in the surface direction to increase the surface area of the crystal cutting tape 20 . Thereby, the laminate of the substrate S and the protective sheet 10 is divided into small pieces, and the distance between the substrates S adjacent to each other is enlarged along the plane direction.

The above-mentioned dicing tape 20 , as shown in FIG. 2B , includes a base material layer 21 and an adhesive layer 22 stacked on the base material layer 21 . As the dicing tape 20, a commercially available item can be used.

In the above-mentioned removal step, as schematically shown in FIG. 1G , at least a part of the plurality of small pieces 10' of the protective sheet is dissolved, or each small piece 10' is peeled off from the small piece S' of the substrate, etc., whereby the stacked Each small piece 10' of the protective sheet on the small piece S' of the substrate is removed.

In the above bonding step, for example, the small piece S' of the substrate is bonded to the adherend Z directly or via a specified member. In addition, in the bonding step, for example, small pieces S' of a plurality of substrates may be stacked. In addition, for example, the small piece S' of the substrate in a state where the covering resin is adhered can also be bonded to the adherend Z. The adherend Z includes, for example, an interposer, a printed circuit board, or a small piece of a substrate (in the case of stacking small pieces of the substrate to laminate them) and the like.

The electronic component device manufactured by the electronic component device manufacturing method of this embodiment can be, for example, a semiconductor device with a plurality of semiconductor chips, etc.; a device with a complementary MOS (CMOS, Complementary Metal Oxide Semiconductor) system LSI ; or a device (MEMS, Micro Electro Mechanical Systems) that has mechanical elements, sensors, actuators, and electronic circuits accumulated on a silicon substrate, glass substrate, organic material substrate, etc. by microfabrication technology, etc. device. The manufactured electronic component device may also be a device provided with a wiring board.

Hereinafter, a method for manufacturing a semiconductor device will be cited as an example of a method for manufacturing an electronic component device, and will be described.

In a method of manufacturing a semiconductor device, generally, a semiconductor wafer is cut out from a semiconductor wafer (substrate) on which circuit constituent elements are disposed on at least one side, and a semiconductor device including the cut out semiconductor wafer is assembled. In the method of manufacturing a semiconductor device according to this embodiment, the above-mentioned protective sheet 10 and dicing tape 20 are used at least as auxiliary tools, and a semiconductor device is manufactured as follows.

As specific embodiments of the manufacturing method of a semiconductor device, the first embodiment to the fifth embodiment are listed and described in detail.

"First Implementation Type" The method for manufacturing a semiconductor device according to the first embodiment includes an assembling step of cutting out a semiconductor wafer X from a semiconductor wafer W having at least one side as a circuit surface, and assembling a semiconductor device having such a semiconductor wafer X. Such an assembling step includes: a step of laminating a protective sheet 10 for protecting the above-mentioned circuit components on the circuit surface of at least one side of the semiconductor wafer W on which the circuit components are arranged; The stacked semiconductor wafer W and the laminated product of the protective sheet 10 are divided in the plane direction with a gap to be divided into small pieces, thereby producing the semiconductor wafer X and the protective sheet 10 after the semiconductor wafer W is chipped. The step of a plurality of small pieces of a laminate formed by stacking small pieces; A step of removing each small piece 10' of the protective sheet laminated on the circuit surface of the semiconductor chip X; and The step of arranging the circuit surface of the semiconductor chip X facing the adherend, and bonding the semiconductor chip X and the adherend.

The assembly steps of the first embodiment include, for example, the following steps. Specifically, the assembling steps of the first embodiment include: The mounting step is to attach the semiconductor wafer W with the circuit components arranged on both sides to the dicing tape 20, and fix the semiconductor wafer W to the dicing tape 20; The protection step (the above lamination step) is to attach the protection sheet 10 to the circuit surface of one side of the semiconductor wafer W, thereby protecting the circuit surface; In the stealth processing step, laser light is used to form a fragile part inside the semiconductor wafer W attached with the protective sheet 10, thereby performing preparations for making the semiconductor wafer W small into semiconductor chips (chips, dies); The expansion step (the above-mentioned step of making a small piece of the laminate) is to make the semiconductor wafer W and the protective sheet 10 into small pieces together by stretching the dicing tape 20; The removal step (the above-mentioned removal step) is to remove a plurality of small pieces 10' of the protective sheet attached to the semiconductor wafer X; Picking up step, peeling between the semiconductor wafer X and the adhesive layer 22 and taking out the semiconductor wafer X; and In the bonding step (the above-mentioned bonding step), the semiconductor wafer X taken out is bonded to the adherend. When implementing these steps, the above-mentioned protective sheet 10 and crystal cutting tape 20 are used as manufacturing auxiliary tools.

The semiconductor wafer W before being chipped into the semiconductor wafer X may be ground to a desired thickness by backgrinding, for example. Specifically, in the back grinding process, the semiconductor wafer W with the back grinding tape B attached to the circuit surface can be ground to reduce the thickness of the semiconductor wafer W to the thickness of the semiconductor wafer X produced subsequently.

The semiconductor wafer W is configured so that a plurality of semiconductor wafers X can be obtained. Specifically, the structure of the semiconductor wafer W can be divided into small pieces by vacating intervals in a plurality of directions along the surface (for example, directions perpendicular to the surface and mutually orthogonal), and then a plurality of semiconductor wafers X can be produced. . In addition, in the semiconductor wafer W, circuit components are arranged on at least one surface, and at least one surface is a circuit surface. For example, in the semiconductor wafer W used in the first embodiment, both surfaces are circuit surfaces. On the other hand, in the semiconductor wafer W used in other embodiments, either side is a circuit side. As shown in FIG. 2C , in the first embodiment, electrode portions D serving as circuit constituent elements are disposed on both sides of the semiconductor wafer W, respectively. The electrode part D on one side is electrically connected to the electrode part D on the other side.

Specifically, the semiconductor wafer X manufactured by dividing the semiconductor wafer W has electrode portions D respectively arranged on two surfaces and conducting with each other. More specifically, as shown in FIG. 2D , electrode portions D are arranged on both sides of the semiconductor wafer X, and conductive through-holes V extending and penetrating in the thickness direction are arranged inside the semiconductor wafer X. Through the through-holes V as described above, the electrode portions D on both surfaces are electrically connected to each other. Both the electrode portion D and the through hole V are made of conductive materials such as metal materials. The through hole V is also called a so-called TSV. The electrode portion D and the through-hole V may be constituted by an integrated member, or may be constituted by bonding separately formed members to each other. In addition, in the semiconductor industry in recent years, with the further development of integration technology, a thinner semiconductor wafer (for example, a thickness of 20 μm or more and 50 μm or less) is required. The shape of the semiconductor wafer when viewed from one side in the thickness direction is, for example, a rectangle; the length of one side is, for example, a specified length ranging from 5 mm to 20 mm.

Hereinafter, "I" is marked in the drawings showing the state of the manufacturing method of the first embodiment. Similarly, "II" to "V" are respectively marked in the second embodiment to the fifth embodiment.

In the mounting step, the semiconductor wafer W is fixed to the dicing tape 20 . As shown in FIG. 3A , on the circuit surface of one side of the semiconductor wafer W, for example, a glass carrier G is attached. The glass carrier G is stacked on the circuit surface of one side of the semiconductor wafer W to support the thinner semiconductor wafer and make the semiconductor wafer easier to handle. For example, the glass carrier G is attached to the circuit surface after forming a circuit on one surface of the wafer, and is used to further form a circuit on the other surface while being attached to the wafer. The thickness of the glass carrier G is, for example, not less than 0.5 mm and not more than 5.0 mm.

In the installation step, the crystal cutting ring R is installed on the adhesive layer 22 of the crystal cutting tape 20 , and the semiconductor wafer W is attached to the exposed surface of the adhesive layer 22 (refer to FIG. 3B ). Next, the glass carrier G is peeled off from the semiconductor wafer W (see FIG. 3C ).

Before the subsequent protection step, as shown in FIG. 3D , a wetting step may be implemented to increase the humidity of the gas in contact with the circuit surface Wa of the semiconductor wafer W. When the protective sheet 10 contains a water-soluble polymer compound, the adhesion between the circuit surface Wa of the semiconductor wafer W and the protective sheet 10 becomes more favorable by performing the wetting step. Also, the wetting step is not essential, and may be performed as needed.

In the protection step, a protection sheet 10 is laminated on the circuit surface of the above-mentioned side of the semiconductor wafer W (see FIG. 3E ). In the protection step, for example, the protection sheet 10 may be directly pressed and attached to the above-mentioned circuit surface, thereby laminating the protection sheet 10 on the above-mentioned circuit surface. On the other hand, it is also possible to prepare a protective sheet composition containing solid components constituting the protective sheet 10 and a solvent for dissolving the solid components, and to volatilize the solvent after applying such a composition on the above-mentioned circuit surface, thereby A protective sheet 10 is formed in contact with the above-mentioned circuit surface, whereby the protective sheet 10 is laminated on the above-mentioned circuit surface. By laminating the protective sheet 10 on the circuit surface of the semiconductor wafer W, it is possible to prevent dust and the like from adhering to the circuit surface of the semiconductor wafer W covered by the protective sheet 10 until the protective sheet 10 is removed.

In the stealth processing step, fragile parts for chipping the semiconductor wafer W into semiconductor wafers X are formed inside the semiconductor wafer W. By irradiating the semiconductor wafer W with laser light L, a fragile portion is formed inside the semiconductor wafer W (see FIG. 3F ). The laser light L is irradiated onto the semiconductor wafer W from, for example, the dicing tape side. Further, the semiconductor wafer W is irradiated with laser light L so that each semiconductor wafer X produced by dividing the semiconductor wafer W in the subsequent expansion step has the above-mentioned electrode portion D as designed in advance. The stealth processing step, for example, can be implemented using a commercially available stealth dicing device.

In the expanding step, as shown in FIG. 3G , in the state where the dicing tape 20 and the protective sheet 10 are disposed on both sides of the semiconductor wafer W, the dicing tape 20 is stretched in the direction of the surface to expand the dicing tape 20 surface area. Thereby, the laminated product of the semiconductor wafer W and the protective sheet 10 is divided into small pieces, and the distance between the adjacent semiconductor wafers X formed by the small pieces is enlarged along the surface direction. Specifically, after the crystal cutting ring R is installed on the adhesive layer 22 of the crystal cutting tape 20, the crystal cutting ring R is fixed on the holder H of the expansion device. Push up the push-up member U included in the expansion device from the lower side of the crystal cutting belt 20, thereby stretching the crystal cutting belt 20 to expand in the plane direction. Thereby, the semiconductor wafer W and the protective sheet 10 are reduced into small pieces under a specific temperature condition. The above-mentioned temperature conditions are, for example, -20°C or higher and 0°C or lower. The expansion state is released by lowering the push-up unit U (so far the low temperature expansion step). When performing the expanding step at low temperature in this way, the protective sheet 10 needs to be cut into small pieces. The above-mentioned protective sheet 10 is designed so that it can be cut well at this time. Further, in the expanding step, the crystal cutting belt 20 is stretched at a higher temperature (for example, not less than 10° C. and not more than 25° C.) to expand the surface area of the cutting crystal belt 20 . Thereby, the semiconductor wafers X adjacent to each other are pulled apart toward the surface of the film surface, and the incision (interval) is further enlarged (room temperature expansion step). In the expanding step, the dicing tape 20 is stretched in the plane direction to expand the area of the dicing tape 20 , whereby the semiconductor wafer W and the protective sheet 10 are divided into small pieces. Specifically, by stretching the dicing tape 20 , the semiconductor wafer W can be divided into small semiconductor wafers X with the above-mentioned weak portion inside the semiconductor wafer as a boundary. At this time, the protective sheet 10 is also divided into small pieces at the same time as the semiconductor wafer W is broken into small pieces.

In the removal step, as shown in FIG. 3H , a liquid containing water is brought into contact with the plurality of small pieces 10' of the protective sheet, and at least a part of each small piece 10' is dissolved in the above-mentioned liquid. Each small piece 10' of the protective sheet is removed. By removing the small piece 10' of the protective sheet in this way, all the small pieces 10' of the protective sheet can be removed more easily. In addition, the amount of foreign matter adhering to the surface of the semiconductor wafer can be reduced more easily by the above-mentioned liquid. quantity. In addition, the surface of each semiconductor wafer X on which the small piece 10' of the protective sheet was laminated can also be washed with liquid.

The small pieces 10' of the protective sheet can be removed by dissolving all the small pieces of the protective sheet (the plurality of small pieces 10' of the protective sheet) in the above-mentioned liquid. On the other hand, it is also possible to peel off each small piece 10 ′ having weakened adhesive force with the semiconductor wafer X from the semiconductor wafer X by dissolving part of the constituent components of the protective sheet small piece 10 ′ in the above-mentioned liquid, Thereby the plurality of small pieces 10' of the protective sheet are removed.

The liquid containing water is not particularly limited as long as it is a liquid substance containing water. Such a liquid may contain 30% by mass or more, 50% by mass or more, 70% by mass or more, 80% by mass or more, or 90% by mass or more of water. The above-mentioned liquid may contain water-soluble components other than water. As such a component, a water-soluble organic solvent is mentioned, for example. Examples of such water-soluble organic solvents include propanols such as methanol, ethanol, and isopropanol, and C4 or less monohydric alcohols such as butanols such as tertiary butanol.

In the removing step of the first embodiment, the small piece 10' of the protective sheet may be immersed in the above-mentioned liquid which is being stirred, and the liquid may be brought into contact with the small piece 10' of the protective sheet. Alternatively, the small piece 10' of the protective sheet may be brought into contact with the liquid sprayed from a nozzle or the like. The temperature of the above-mentioned liquid is not particularly limited, for example, it can be set at 10°C or higher and 90°C or lower. From the viewpoint of being able to remove the plurality of small pieces 10' of the protective sheet in a shorter time, the temperature of the liquid is preferably 40°C or higher.

For example, in the removal step, the disc-shaped stage supporting the dicing tape 20 from below is rotated in the circumferential direction, and the liquid is sprayed toward the plurality of semiconductor wafers X attached to the adhesive layer 22 of the dicing tape 20 . Thereby, a plurality of small pieces 10' of the protective sheet stacked on the semiconductor wafer W can be removed. The rotation speed of the stage can be, for example, not less than 500 rpm and not more than 4000 rpm; the injection volume of liquid can be, for example, not less than 0.05 L/min and not more than 5.0 L/min; the injection time can be, for example, not less than 5 seconds and not more than 300 seconds.

According to the above method of manufacturing a semiconductor device, since the protective sheet 10 is laminated on the surface (circuit surface) of the semiconductor wafer W on which the circuit components are arranged, foreign matter can be prevented from adhering to the above-mentioned circuit surface until the protective sheet is placed. Material 10 is removed. Specifically, since the semiconductor wafer W is cut into small pieces to produce the semiconductor wafer X in a state where the semiconductor wafer W and the protective sheet 10 are stacked, it is possible to prevent chipping or the like that may occur when the semiconductor wafer W is diced or the like The foreign matter attached to the circuit surface of the semiconductor chip X. Even if there is foreign matter attached to the circuit surface of the semiconductor chip X before the protective sheet 10 is stacked, the foreign matter can be removed when the small piece 10' of the protective sheet stacked on the circuit surface of the semiconductor chip X is removed. Therefore, foreign matter can be suppressed from adhering to the circuit surface of the produced semiconductor wafer X.

In addition, the components, physical properties, and the like of the protective sheet 10 will be described in detail later.

In the picking step, as shown in FIG. 3I , the semiconductor wafer X is peeled off from the adhesive layer 22 of the dicing tape 20 . Specifically, the pin member P is raised, and the semiconductor wafer X to be picked up is pushed up through the dicing tape 20 . The pushed-up semiconductor wafer X is held by the suction jig J.

When the picking step is performed in this way, the semiconductor wafer X needs to be easily peeled off from the adhesive layer 22 of the dicing tape 20 . In addition, when performing the above-mentioned expansion step, the semiconductor wafer W and the protective sheet 10 need to be well divided into small pieces by stretching the dicing tape 20 . The crystal cutting belt 20 mentioned above is designed to be able to exert such performance well. For example, the dicing tape 20 is configured to harden the adhesive layer 22 by irradiating active energy rays (such as ultraviolet rays), thereby reducing the adhesive force of the adhesive layer 22 . The adhesive force of the adhesive layer 22 can be reduced by curing the adhesive layer 22 after irradiation, so the semiconductor chip X can be easily peeled off from the adhesive layer 22 after irradiation. Crystal cutting tapes 20 of this type are already on the market.

On both sides of the semiconductor wafer X taken out by the pick-up step, as described above, the electrode portions D which are electrically connected to each other are arranged respectively. The surface layer portions of one surface and the other surface of the semiconductor wafer X are formed with electrode portions D and non-electrode portions other than the electrode portions D. The non-electrode portion is made of, for example, an insulating material (silicon oxide) or the like. As shown in FIG. 2D , on one side and the other side of the semiconductor wafer X, the surfaces of the electrode portion D and the non-electrode portion are on the same plane. The electrode portion D is formed to have a thickness of 5 nm to 10 μm from the outermost surface of the semiconductor wafer X, for example. In addition, the above-mentioned through-hole V arranged to penetrate the semiconductor wafer X in the thickness direction is covered with the above-mentioned insulating material except for the portion in contact with the electrode portion D. In other words, part of the surface of the through-hole V extending in the thickness direction in the semiconductor wafer X is covered with an insulating material, and the other part is in contact with the electrode portion D.

The bonding step is performed after the removing step and the picking step. In the bonding step, for example, as shown in FIG. 3J , the surface (circuit surface) of the semiconductor wafer X from which the small piece 10' of the protective sheet is removed faces the adherend, and the semiconductor wafer X is bonded to the adherend. The method of facing the circuit surface of the semiconductor chip X to the substrate and bonding the substrate to the semiconductor chip X is generally called flip-chip bonding. Even with this bonding method, since the number of foreign matter adhering to the circuit surface of the semiconductor chip X can be suppressed by the above-mentioned removal step, it is possible to suppress defects caused by foreign matter that enters between the circuit surface of the semiconductor chip X and the adherend. Influence.

In the bonding step, for example, the semiconductor wafer X is bonded to the adherend Z (wiring board or the like). At this time, the substrate Z and the semiconductor chip X are bonded, and the electrode part D on the side of the substrate Z and the electrode part D on the side of the semiconductor chip X are electrically connected. In addition, for example, in the bonding step, at least two semiconductor wafers X are stacked, and the electrode portion D on the X side of one semiconductor wafer as an adherend is directly connected to the electrode portion D on the X side of the other semiconductor wafer. In other words, these electrode portions D are directly connected to each other, and the electrode portion D on the X side of one semiconductor chip is electrically connected to the electrode portion D on the X side of the other semiconductor chip, thereby stacking the semiconductor chips X. As mentioned above, since the electrode portion and the non-electrode portion are arranged on the same plane on the circuit surface of the semiconductor wafer, etc., when the electrode portions are directly connected to each other, the less foreign matter adhering to the circuit surface of the semiconductor wafer X, the better. . In particular, it is desirable that foreign matter does not adhere to the surface of the electrode portion. The manufacturing method of this embodiment can suppress the adhesion of foreign substances to the surface of the semiconductor wafer X, and therefore is particularly effective when bonding a plurality of semiconductor wafers X to each other as described above. In the case of stacking a plurality of semiconductor wafers X as described above in the bonding step, since the plurality of semiconductor wafers X having been suppressed from adhering to the circuit surface is stacked, it is possible to suppress the entry of one semiconductor wafer X and another semiconductor wafer stacked. The number of foreign objects between X. Therefore, between the adjacent semiconductor wafers X, the electrode portions D can be more reliably connected to each other. Therefore, the circuits of the plurality of semiconductor chips X can be mutually conducted with high reliability.

When the electrode portions D are directly connected to each other, for example, atomic diffusion bonding can be used. The atomic diffusion bonding treatment can be performed using, for example, a commercially available atomic diffusion bonding device.

In addition, in the first embodiment, a resin sealing step of sealing (covering) the semiconductor chip X with a thermosetting resin or the like may be performed to protect the semiconductor chip X after the bonding step.

<Details of the protective sheet of the first embodiment> Although the thickness of the protective sheet 10 is not specifically limited, For example, it is 1 micrometer or more and 100 micrometers or less. Such a thickness may be 3 μm or more, or may be 5 μm or more. In addition, such thickness may be 40 micrometers or less. Moreover, when the protective sheet 10 is a laminated body, the said thickness is the total thickness of a laminated body.

The protective sheet 10 has a structure in which it is stretched in the plane direction in the above-mentioned expanding step to be divided into small pieces. Each protective sheet 10 after dicing has the same area as the circuit surface of the semiconductor chip X.

The above-mentioned protective sheet 10 contains at least a water-soluble polymer compound, so that the small piece 10' of the protective sheet laminated on the semiconductor wafer X is removed by the water-containing liquid in the above-mentioned removal step.

As a water-soluble polymer compound, polyvinyl alcohol (PVA), polyvinylpyrrolidone (PVP), etc. are mentioned, for example. Among these, one type may be used as a water-soluble polymer compound, and two or more types may be used in combination.

The degree of saponification (mole %) of the polyvinyl alcohol is preferably 50 or higher, more preferably 60 or higher. In addition, the above-mentioned degree of saponification is ideally 98 or less. Since the polyvinyl alcohol has a degree of saponification of 50 or higher, the polyvinyl alcohol is more easily soluble in the aqueous liquid in the removal step.

The degree of saponification mentioned above was measured by proton magnetic resonance spectroscopy ( ¹ H MNR) under the following analytical conditions. Also, when the protective sheet 10 contains components other than PVA, in order to avoid overlapping of peaks in the measurement chart, the measurement is performed after separating and extracting PVA by methanol extraction or the like. Analysis device: FT-NMR: Bruker Biospin, "AVANCEIII-400" Observation frequency: 400 MHz (1H) Measurement solvent: Heavy water or heavy DMSO Measurement temperature: 80°C Chemical shift reference: External standard TSP-d4 (0.00ppm) (during the measurement of heavy water): measurement solvent (2.50ppm) (during the measurement of heavy DMSO) According to the peak derived from the methylene group of vinyl alcohol unit (VOH) (heavy water: 2.0~1.1ppm, heavy DMSO : 1.9~1.0ppm), and peaks derived from acetyl groups of vinyl acetate units (VAc) (heavy water: around 2.1ppm, heavy DMSO: around 2.0ppm), and the degree of saponification was calculated by the following formula. In addition, in the following formula, VOH (-CH ₂ -) is the intensity of the peak derived from the methylene group of the vinyl alcohol unit (VOH), and VAc (CH ₃ CO-) is the peak intensity derived from the vinyl acetate unit (VAc). The intensity of the peak of the acyl group. [Number 1] [VOH(-CH ₂ -)/2] Saponification degree = ――――――――――――――――――――――×100 [VAc(CH ₃ CO-)/3] +[VOH(-CH ₂ -)/2]

The average degree of polymerization of the polyvinyl alcohol is preferably 100 or more, more preferably 200 or more. In addition, the above-mentioned average degree of polymerization is ideally 1,000 or less, more preferably 800 or less. When the average degree of polymerization of polyvinyl alcohol is 100 or more, it becomes easier to form the said protective sheet 10. On the other hand, since the average degree of polymerization of polyvinyl alcohol is 1000 or less, polyvinyl alcohol is more easily dissolved in a liquid containing water in the removal step.

The above-mentioned average degree of polymerization is measured by gel permeation chromatography (GPC). The measurement conditions are as follows. Analyzer: "1260 Infinity" manufactured by Agilent Technologies String: Tosoh Corporation, TSKgel G6000PWXL+TSKgel G3000PWXL (connected in series) Column temperature: 40°C Eluent: 0.2M sodium nitrate aqueous solution Flow rate: 0.8mL/min Injection volume: 100μL Detector: Differential Refractometer (RI) Standard samples: polyethylene glycol (PEG), polyvinyl alcohol (PVA) By GPC measurement using a PEG standard sample, the weight average molecular weight Mw of the measured sample (PVA) and the PVA standard sample with a known average degree of polymerization was calculated respectively. A calibration line was prepared from the average degree of polymerization of the PVA standard sample and the calculated weight average molecular weight Mw of the PVA standard sample. Using this calibration curve, the average degree of polymerization of the sample to be measured (PVA) was obtained from the weight average molecular weight Mw of the sample to be measured (PVA).

The elongation at break of the protective sheet 10 used in the production method of the first embodiment etc. is desirably 30.0% or less at -15°C. Such elongation at break may be 20.0% or less, or may be 10.0% or less. In addition, the above-mentioned elongation at break may be 0.1% or more. When the said elongation at break is 0.1 % - 30.0 %, the said protective sheet 10 can be made into small pieces more reliably in an expansion process.

The aforementioned elongation at break can be increased by, for example, increasing the molecular weight of the water-soluble polymer compound contained in the protective sheet 10 . On the other hand, for example, the above-mentioned elongation at break can be lowered by lowering the molecular weight of the water-soluble polymer compound contained in the protective sheet 10 .

The above elongation at break was measured under the following measurement conditions. ･Measuring device: Tensile testing machine ("Autograph AG-IS" manufactured by Shimadzu Corporation, etc. can be used) ･Measurement sample: thickness 30μm ･Test piece: a long strip with a width of 10mm and a length of 50mm, and the initial distance between chucks is 20mm ･Tension speed: 10mm/sec ･Measurement temperature: -15°C (keep at -15°C for 5 minutes and start measurement) ･The elongation at break (the ratio of the elongated length to the original length) is defined as the elongation at break (elongation at break)

The breaking strength of the protective sheet 10 may be 500 MPa or less at -15°C, or may be 200 MPa or less. In addition, the above breaking strength may be 1.0 MPa or more. Such breaking strength refers to the tensile force at break in the above-mentioned measurement of elongation at break. When the said breaking strength is 1.0 MPa or more and 500 MPa or less, the said protective sheet 10 can be made into small pieces more reliably in an expansion process.

The aforementioned breaking strength can be increased by, for example, increasing the molecular weight of the water-soluble polymer compound contained in the protective sheet 10 . On the other hand, for example, the breaking strength can be lowered by lowering the molecular weight of the water-soluble polymer compound contained in the protective sheet 10 .

The adhesion of the protective sheet 10 to the semiconductor wafer W is represented by the peeling force when the protective sheet 10 is peeled off from the silicon bare wafer. The peeling force of the protective sheet 10 at 25° C. may be 10.0 [N/10mm] or less, or may be 8.0 N/10mm] or less. Moreover, the said peeling force may be 0.01 [N/10mm] or more. When the above-mentioned peeling force is 0.01 [N/10mm] or more and 10.0 [N/10mm] or less, when the above-mentioned protection sheet 10 is reduced into small pieces in the expansion step, it is possible to further suppress the separation of the small-piece protection sheet 10 from the semiconductor wafer X. Accidentally peeled off.

The above peeling force can be increased by, for example, increasing the molecular weight of the water-soluble polymer compound contained in the protective sheet 10 . On the other hand, for example, the peeling force can be reduced by reducing the molecular weight of the water-soluble polymer compound contained in the protective sheet 10 .

The above-mentioned peeling force was measured under the following measurement conditions. A measurement sample was produced as follows to measure the peeling force of one side of the protective sheet 10 (the side attached to the semiconductor wafer W). First, the backing tape was attached at 25°C on the surface opposite to the above-mentioned one surface of the protective sheet 10 using a hand roller. Next, the measurement sample was processed to have a width of 100 mm, and a silicon bare wafer was bonded to the above-mentioned one surface of the protective sheet 10 . Bonding is carried out under the conditions of 90°C and 10mm/sec. Next, in an environment of 23° C., with a peeling angle of 180° and a peeling speed of 300 mm/min, the backing tape and the protective sheet 10 were peeled from the bare wafer to measure the peeling force. Finally, convert the measured value and express it in the unit value of [N/10mm]. In addition, as a measurement device, for example, "Autograph (manufactured by Shimadzu Corporation)" can be used.

The tensile elastic modulus (tensile storage elastic modulus E') of the protective sheet 10 at -15°C is ideally 0.01 GPa or more and 10.0 GPa or less. Such a tensile elastic modulus may be 0.05 GPa or more, and may be 0.10 GPa or more. In addition, such a tensile elastic modulus may be 5.0 GPa or less, and may be 3.0 GPa or less. When the said tensile modulus at -15 degreeC is 0.01 GPa or more and 10.0 GPa or less, the said protective sheet 10 can be made into small pieces more reliably in an expansion process.

The elastic modulus (tensile elastic modulus) of the protective sheet 10 can be increased by, for example, increasing the molecular weight of the water-soluble polymer compound contained in the protective sheet 10 . On the other hand, for example, the tensile modulus of elasticity can be reduced by reducing the molecular weight of the water-soluble polymer compound contained in the protective sheet 10 .

The above-mentioned tensile elastic modulus was measured under the following measurement conditions. ･Measuring device: Solid viscoelasticity measuring device ("RSAIII" manufactured by TA Instruments, etc. can be used) ･Measurement sample: thickness 50μm ･Test piece: a long strip with a width of 10mm and a length of 40mm, and the initial distance between chucks is 20mm ･Measurement mode: tensile mode ･Frequency 1Hz, heating rate 10℃/min, strain 0.1% ･Measurement temperature range: -40°C to 80°C (heating starts after 5 minutes at -40°C) ･Read the tensile elastic modulus (tensile storage elastic modulus) at -15°C and 25°C [MPa]

The surface free energy of the above-mentioned protective sheet 10 may be 70 [mJ/m ² ] or less, or 65 [mJ/m ² ] or less at 25°C. In addition, the above-mentioned surface free energy may be 30 [mJ/m ² ] or more. When the surface free energy is within the above range, the wettability of the protective sheet 10 to water becomes moderately better, so that the protective sheet 10 can be removed more easily in the removal step.

The above-mentioned surface free energy can be increased, for example, by increasing the proportion of hydrophilic groups (-OH groups, etc.) in the molecules of the water-soluble polymer compound. On the other hand, for example, the above-mentioned surface free energy can be reduced by increasing the proportion of hydrophobic groups (alkyl groups, etc.) in the molecule of the water-soluble polymer compound.

The above-mentioned surface free energy is calculated from the result of contact angle measurement. Specifically, under the conditions of 20°C and a relative humidity of 65%, each solution of water (H ₂ O) and diiodomethane (CH ₂ I ₂ ) in contact with the surface of the protective sheet 10 was measured using a contact angle meter. drop contact angle. Next, from the measured values of the contact angle θw of water and the contact angle θi of diiodomethane, the surface free energy was calculated as follows. Specifically, γs ^d (dispersion component of surface free energy) and γs ^h (dispersion component of surface free energy) were obtained according to the method of Owens et al. described in Journal of Applied Polymer Science, vol. polar ingredients). Next, the value γs (=γs ^d + γs ^h ) obtained by adding γs ^d and γs ^h is set as the surface free energy of the protective sheet 10 . Individual values of γs ^d (dispersed component) and γs ^h (polar component) are obtained by solving the binary simultaneous equations of the following formulas (1) and (2). In formulas (1) and (2), γw is the surface free energy of water, γw ^d is the dispersed component of the surface free energy of water, γw ^h is the polar component of the surface free energy of water, and γi is the surface free energy of methyl iodide , γi ^d is the dispersed component of the surface free energy of methyl iodide, and γi ^h is the polar component of the surface free energy of methyl iodide, and the values shown below are known values. γw=72.8 [mJ/m ² ] γw ^d =21.8 [mJ/m ² ] γw ^h =51.0 [mJ/m ² ] γi=50.8 [mJ/m ² ] γi ^d =48.5 [mJ/m ² ] γi ^h =2.3 [mJ/m ² ] [number 2]

Specifically, in the protective sheet 10 described above, the surface free energy of one surface (the surface attached to the semiconductor wafer W) was measured. The contact angles of water and diiodomethane were measured separately, and the average value of 5 measurements was adopted. Also, the contact angle within 5 seconds after dropping 1 mL of the liquid on the surface was measured. The dispersion component and the polar component were calculated from the measured values of the contact angle, and the surface free energy was calculated from their sum.

Next, the second to fifth embodiments will be described in detail. In addition, in the second embodiment to the fifth embodiment, the same description as the first embodiment will not be repeated. In the second embodiment to the fifth embodiment, unless otherwise mentioned, the same operations as those in the first embodiment can be performed.

"Second Implementation Type" The manufacturing method of the semiconductor device of the second embodiment is the same as the manufacturing method of the semiconductor device of the first embodiment, including the above-mentioned steps. However, the manufacturing method of the semiconductor device of the second embodiment is different from the manufacturing method of the semiconductor device of the first embodiment in the following differences: the circuit components are arranged on one side of the semiconductor wafer W; the structure of the protective sheet 10 and the Components; removal method of the protective sheet 10 in the removal step, etc.

Specifically, in the method of manufacturing a semiconductor device according to the second embodiment, the protective sheet 10 contains a curable composition, and the protective sheet 10 stacked on the circuit surface of the semiconductor wafer W is hardened by curing treatment. , making the laminate of the semiconductor wafer W and the protective sheet 10 into small pieces.

The protective sheet 10 used in the second embodiment contains a curable composition cured by curing treatment. For example, the protective sheet 10 is formed of a curable composition. A curable composition contains a curable compound that initiates a hardening reaction by hardening treatment. The curable compound starts a hardening reaction by, for example, irradiation treatment with active energy rays such as ultraviolet rays or hardening treatment such as heat treatment. In the second embodiment, the protective sheet 10 is hardened by hardening treatment, so that the protective sheet 10 can be divided into smaller pieces more easily in the expansion step. In addition, by hardening the protective sheet 10 by curing treatment, the adhesive force of the protective sheet 10 can be reduced. Therefore, each small piece 10' of the protective sheet can be easily peeled off from each semiconductor wafer X after the hardening treatment.

In the second embodiment, as shown in FIG. 4A , the same as the first embodiment, the semiconductor wafer W and the protective sheet 10 are sequentially stacked on the dicing tape 20 . The protective sheet 10 is preferably attached with a release liner 15 . Then, as shown in FIG. 4B , a stealth processing step is performed on the semiconductor wafer W in the same manner as in the first embodiment.

For example, the protective sheet 10 used in the second embodiment is hardened by irradiating ultraviolet rays M or the like as shown in FIG. 4C. Specifically, in a state where the adhesive layer 22 is attached to one surface of the semiconductor wafer W and the protective sheet 10 is attached to the other surface of the semiconductor wafer W, at least the protective sheet 10 is irradiated with ultraviolet light or the like. The protective sheet 10 is cured by irradiating ultraviolet rays or the like. Then, as shown in FIG. 4D , the release liner 15 is peeled off from the protective sheet 10 . Furthermore, as shown in FIG. 4E , the semiconductor wafer W and the protective sheet 10 are divided into small pieces as in the first embodiment.

(Removal step of the second embodiment) In the removal step of the second embodiment, the small piece 10' of the protective sheet is peeled from the semiconductor wafer X using the adhesive tape T for peeling. As the peeling adhesive tape T, for example, a commercially available adhesive tape can be used.

In the removal step of the second embodiment, as shown in FIG. 4F , the peeling adhesive tape T of the plurality of small pieces 10 ′ attached to the protective sheet is peeled off, thereby removing the peeling adhesive tape T together with the protective sheet. A plurality of small pieces 10' are removed. By using the peeling adhesive tape T in this way, the plurality of small pieces 10' of the protective sheet can be removed relatively easily. In addition, when the plurality of small pieces 10' of the protective sheet are peeled off, foreign matter adhering to the circuit surface of the semiconductor can also be removed.

The adhesiveness of the protective sheet 10 used in the second embodiment to the semiconductor wafer W is represented by, for example, the peeling force when the above-mentioned protective sheet 10 is peeled off from the silicon bare wafer. The measuring method of such peeling force is as above-mentioned. Moreover, the peeling force between the small piece 10' of the protective sheet and the semiconductor wafer X is smaller than the peeling force between the small piece 10' of the protective sheet and the adhesive tape T for peeling after the above-mentioned hardening treatment.

<Details of the protective sheet of the second embodiment> The protective sheet 10 used in the second embodiment contains, for example, an acrylic polymer, an isocyanate compound, and a polymerization initiator.

The above-mentioned acrylic polymer has, in its molecule, at least: a constituent unit of an alkyl (meth)acrylate, a constituent unit of a hydroxyl-containing (meth)acrylate, and a constituent unit of a polymerizable group-containing (meth)acrylate. Constituent unit. A constituent unit is a unit constituting the main chain of an acrylic polymer. Each side chain in the above-mentioned acrylic polymer is contained in each constituent unit constituting the main chain.

The constituent units of the above-mentioned alkyl (meth)acrylates are derived from alkyl (meth)acrylate monomers. In other words, the molecular structure of the alkyl (meth)acrylate monomer after polymerization is the constituent unit of the alkyl (meth)acrylate. The term "alkyl" refers to a hydrocarbon moiety that forms an ester bond with (meth)acrylic acid. The hydrocarbon of the alkyl portion in the constituent unit of the alkyl (meth)acrylate may be a saturated hydrocarbon or an unsaturated hydrocarbon. The carbon number of the alkyl moiety may be 6 or more and 10 or less.

Acrylic polymers have hydroxyl-containing (meth)acrylate constituent units, and the hydroxyl groups of such constituent units easily react with isocyanate groups. The protection sheet 10 can be moderately cured by allowing an acrylic polymer having a constituent unit of a hydroxyl-containing (meth)acrylate and an isocyanate compound to coexist in the protection sheet 10 in advance. Therefore, the acrylic polymer can be sufficiently gelled. Therefore, the protective sheet 10 can maintain the shape and exhibit adhesive properties.

The constituent unit of hydroxyl-containing (meth)acrylate is ideally a constituent unit of hydroxyl-containing C2-C14 alkyl (meth)acrylate. The expression "C2~C14 alkyl" refers to the carbon number (2 to 14) of the hydrocarbon moiety after forming an ester bond with (meth)acrylic acid. In other words, C2~C14 alkyl (meth)acrylate monomers containing hydroxyl groups refer to monomers formed by forming ester bonds between (meth)acrylic acid and alcohols (usually diols) with 2 to 14 carbons. body. C2~C14 alkyl hydrocarbons, usually saturated hydrocarbons. For example, C2~C14 alkyl hydrocarbons are linear saturated hydrocarbons or branched saturated hydrocarbons. C2~C14 alkyl hydrocarbons ideally do not contain polar groups such as oxygen (O) or nitrogen (N).

The constituent units of hydroxyl-containing C2~C14 alkyl (meth)acrylates include, for example: hydroxyethyl (meth)acrylate, hydroxypropyl (meth)acrylate, hydroxy-n-butyl (meth)acrylate Each constituent unit of hydroxybutyl (meth)acrylate such as base ester or hydroxyisobutyl (meth)acrylate. In addition, in the constituent unit of hydroxybutyl (meth)acrylate, the hydroxyl group (-OH group) may be bonded to the carbon (C) at the end of the hydrocarbon portion, or may be bonded to a carbon other than the end of the hydrocarbon portion (C) on.

The above-mentioned acrylic polymer is a structural unit containing a polymerizable group-containing (meth)acrylate having a polymerizable unsaturated double bond (polymerizable carbon-carbon double bond) in a side chain. By making the above-mentioned acrylic polymer contain a polymerizable group-containing (meth)acrylate structural unit, the protective sheet 10 can be cured by irradiating active energy rays (ultraviolet rays, etc.) before the pickup step. Specifically, by irradiating active energy rays such as ultraviolet rays, the photopolymerization initiator generates radicals, and by the action of the radicals, acrylic polymers can be crosslinked. Thereby, the adhesive force of the protective sheet 10 before irradiation can be reduced by irradiation. Furthermore, the small piece 10' of the protective sheet can be peeled off from the semiconductor wafer X favorably. Also, as active energy rays, ultraviolet rays, radiation rays, and electron beams are used.

The structural unit of the polymeric group-containing (meth)acrylate may specifically have the following molecular structure: the hydroxyl group in the above-mentioned structural unit of the hydroxyl-containing (meth)acrylate, and the isocyanate group-containing (meth)acrylate. The molecular structure formed by the isocyanate group of the acrylate monomer forming a urethane bond.

The structural unit of the polymerizable group-containing (meth)acrylate can be prepared after polymerization of the acrylic polymer. For example, after copolymerization of alkyl (meth)acrylate monomers and hydroxyl-containing (meth)acrylate monomers, the hydroxyl groups, Urethane reaction is carried out with the isocyanate group of the isocyanate group-containing polymerizable monomer to obtain the above-mentioned polymerizable group-containing (meth)acrylate constituent unit.

The above-mentioned isocyanate group-containing (meth)acrylate monomer ideally has one isocyanate group and one (meth)acryl group in the molecule. As such a monomer, 2-isocyanatoethyl (meth)acrylate is mentioned, for example.

The protective sheet 10 may further contain an isocyanate compound having a plurality of isocyanate groups in the molecule. Thereby, the cross-linking reaction among the acrylic polymers in the protective sheet 10 can be carried out. Specifically, one isocyanate group of an isocyanate compound reacts with a hydroxyl group of an acrylic polymer, and the other isocyanate group reacts with a hydroxyl group of another acrylic polymer, thereby performing a crosslinking reaction via the isocyanate compound.

As an isocyanate compound, diisocyanates, such as aliphatic diisocyanate, alicyclic diisocyanate, and araliphatic diisocyanate, are mentioned, for example. Furthermore, examples of the isocyanate compound include polymerized polyisocyanates such as dimers and trimers of diisocyanates, and polymethylene polyphenylene polyisocyanates.

Moreover, as an isocyanate compound, the polyisocyanate which made the said isocyanate compound and the compound containing active hydrogen react, for example in excess is mentioned. Examples of active hydrogen-containing compounds include active hydrogen-containing low-molecular-weight compounds, active hydrogen-containing high-molecular-weight compounds, and the like. Moreover, as an isocyanate compound, an allophanate polyisocyanate, a biuret polyisocyanate, etc. can also be used. The above-mentioned isocyanate compounds may be used alone or in combination of two or more.

The above-mentioned isocyanate compound is ideally a reactant of an aromatic diisocyanate and a low molecular weight compound containing active hydrogen. The reaction rate of the isocyanate group in the reactant of aromatic diisocyanate is relatively slow, so the protective sheet 10 containing such a reactant can suppress excessive hardening. The above-mentioned isocyanate compound preferably has three or more isocyanate groups in the molecule.

The polymerization initiator contained in the protective sheet 10 is a compound that can initiate a polymerization reaction by applying heat or light energy. By making the protective sheet 10 contain a polymerization initiator, it is possible to cause a crosslinking reaction between acrylic polymers when heat energy or light energy is given to the protective sheet 10 . Specifically, the polymerization reaction of the polymerizable groups can be initiated between the acrylic polymers having the constituent units of the polymerizable group-containing (meth)acrylate, and the protective sheet 10 can be cured. Thereby, the adhesive force of the protective sheet 10 can be reduced, and the small piece 10' of the hardened protective sheet can be easily peeled off from the semiconductor wafer X in the removal step. As a polymerization initiator, for example, a photopolymerization initiator, a thermal polymerization initiator, or the like is used. As a polymerization initiator, a general commercially available product can be used.

The protective sheet 10 of the second embodiment can be produced as follows. Specifically, an acrylic polymer is synthesized, and the protective sheet 10 is produced by volatilizing the solvent from an adhesive composition containing an acrylic polymer, an isocyanate compound, a polymerization initiator, and a solvent.

In the synthesis of an acrylic polymer, for example, an intermediate product of an acrylic polymer is synthesized by radically polymerizing an alkyl (meth)acrylate monomer and a hydroxyl-containing (meth)acrylate monomer. Radical polymerization can be performed by a general method. For example, the acrylic acid polymer intermediate can be synthesized by dissolving each of the above-mentioned monomers in a solvent while stirring while heating, and adding a polymerization initiator. It can also be polymerized in the presence of a chain transfer agent to adjust the molecular weight of the acrylic polymer. Next, the hydroxyl groups of the constituent units of the hydroxyl group-containing (meth)acrylate contained in the intermediate product of the acrylic polymer and the isocyanate group of the polymerizable monomer containing the isocyanate group are bonded by a urethanization reaction. Knot. Thereby, some structural units of the hydroxyl group-containing (meth)acrylate become the structural unit of the polymeric group containing (meth)acrylate. Urethane reaction can be performed by a general method. For example, in the presence of a solvent and a urethanization catalyst, the acrylic polymer intermediate product and the isocyanate group-containing polymerizable monomer are stirred while being heated. Thereby, a part of the hydroxyl group of the acrylic polymer intermediate product and the isocyanate group of the isocyanate group-containing polymerizable monomer can form a urethane bond.

Next, an acrylic polymer, an isocyanate compound, and a polymerization initiator are dissolved in a solvent to prepare an adhesive composition. The viscosity of the composition can be adjusted by changing the amount of solvent. Next, the adhesive composition is applied to the release liner 15 (described later). As the coating method, for example, general coating methods such as roll coating, screen coating, and gravure coating are used. The applied composition is subjected to solvent removal treatment, curing treatment, etc., whereby the applied adhesive composition is cured, thereby producing the protective sheet 10 .

The protective sheet 10 of the second embodiment, for example, as shown in FIG. 2A , can be laminated with a release liner 15 on at least one side before or during use. The release liner 15 is configured to be easily peeled from the protective sheet 10 . More specifically, at least one of the surface of the protective sheet 10 that will overlap the circuit surface of the semiconductor wafer W, or the surface opposite to this surface, may be attached with a protective sheet before use or during use. Release liner 15. The release liner 15 is used to protect the protection sheet 10 and is peeled off and removed after the protection sheet 10 is attached to the semiconductor wafer W. Referring to FIG.

The above-mentioned release liner 15 can be used as a supporting material for supporting the protective sheet 10 . The release liner 15 is suitably used when laminating the protective sheet 10 on the semiconductor wafer W. As shown in FIG. Specifically, the protective sheet 10 can be attached to the semiconductor wafer W by stacking the protective sheet 10 on the semiconductor wafer W in a state where the release liner 15 and the protective sheet 10 are laminated. Then, the release liner 15 can be peeled off. In addition, a release liner 15 may be further attached to the protective sheet 10 so that the protective sheet 10 may be placed between two release liners 15 .

The thickness of the release liner 15 may be, for example, not less than 25 μm and not more than 75 μm. The release liner 15 is preferably, for example, a resin film such as a polyethylene terephthalate resin film. The release liner 15 is desirably translucent (ultraviolet ray transmissive). The release liner 15 can be, for example, a plastic film or paper surface-treated with a silicone-based, long-chain alkyl-based, fluorine-based, or molybdenum sulfide release agent. In addition, as the release liner 15, a commercially available product such as "DIAFOIL MRA50" (a biaxially stretched polyester film manufactured by Mitsubishi Chemical Corporation) can be used.

The protective sheet 10 of the second embodiment may contain, for example, a curable compound that is cured by active energy rays as described above, or may contain a curable compound that can initiate a curing reaction by heat treatment. The curable compound capable of starting a curing reaction by heat treatment includes, for example, a thermosetting resin. Furthermore, examples of the curable compound cured by active energy rays further include ultraviolet curable polyurethane resins and the like. In addition, curable compounds also include curable silicone resin compositions.

As a thermosetting resin, an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a thermosetting polyimide resin, etc. are mentioned, for example. The above-mentioned thermosetting resins may be used alone or in combination of two or more.

The above-mentioned epoxy resins include, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, type, phenol novolac type, o-cresol novolac type, trishydroxyphenylmethane type, tetraphenol ethane type, hydantoylurea type, triglycidyl isocyanurate type, or glycidylamine type Each epoxy resin.

Phenolic resins can be used as hardeners for epoxy resins. Examples of the phenol resin include polyoxystyrenes such as novolak-type phenol resins, resole-type phenol resins, and polyparaoxystyrene. Examples of novolak-type phenol resins include phenol novolak resins, phenol aralkyl resins, cresol novolac resins, tertiary butylphenol novolak resins, and nonylphenol novolak resins. The above-mentioned phenolic resins may be used alone or in combination of two or more.

Examples of ultraviolet curable polyurethane resins include compounds having a main chain composed of a plurality of urethane bonds and side chains containing (meth)acryl groups in the molecule. Commercially available ultraviolet curable polyurethane resins include, for example, "8UH series" manufactured by Taisei Fine Chemical Co., Ltd., and the like.

Curable polysiloxane resin compositions include, for example, compositions that contain polysiloxane resins having silanol groups in the molecule and that can be hardened by condensation reactions of silanol groups, and compositions that can be hardened by condensation reactions of alkenyl and SiH groups. Compositions hardened by the hydrosilylation reaction, compositions containing polysiloxane resins having polymerizable unsaturated groups in the molecule and hardened by free radical polymerization, etc.

In the second embodiment, the elongation at break and the strength at break before and after the hardening treatment of the protective sheet 10 can be the same as the elongation at break and the strength at break of the protective sheet 10 in the first embodiment, respectively. .

In the second embodiment, the adhesion of the protective sheet 10 to the semiconductor wafer W before and after the curing treatment can be measured by the above-mentioned peeling force shown in the description of the first embodiment. Such a peeling force can be the same as the above-mentioned peeling force of the protective sheet 10 used in the first embodiment.

The protective sheet 10 used in the second embodiment preferably has a tensile elastic modulus (tensile storage elastic modulus E') at 25°C before hardening treatment of 1.0 MPa to 1.0 GPa. In addition, it is desirable that the tensile elastic modulus (tensile storage elastic modulus E') at -15°C before hardening treatment is 2.0 MPa or more and 1.0 GPa or less. The protective sheet 10 used in the second embodiment preferably has a tensile elastic modulus (tensile storage elastic modulus E') of 5.0 MPa or more and 10.0 GPa or less after curing treatment at 25°C. In addition, it is desirable that the tensile elastic modulus (tensile storage elastic modulus E') at -15°C after curing treatment be 10.0 MPa or more and 10.0 GPa or less.

In the second embodiment, steps that are not particularly mentioned can be performed in the same manner as each step in the first embodiment, the third embodiment, the fourth embodiment, or the fifth embodiment.

Next, the third embodiment will be described in detail. In addition, in the third embodiment, the same description as the first embodiment and the second embodiment will not be repeated. In the third embodiment, unless otherwise mentioned, the same operation as that of the first embodiment or the second embodiment can be performed.

"Third Implementation Type" The main difference between the manufacturing method of the semiconductor device of the third embodiment and the first embodiment is that in the mounting step, the semiconductor wafer W is attached to the semiconductor wafer W and the protective sheet 10 in the state of lamination. The adhesive layer 22 is not the adhesive layer 22 and the like for attaching the semiconductor wafer W stacked on the glass carrier G to the dicing tape 20 .

Specifically, in the method of manufacturing a semiconductor device according to the third embodiment, as shown in FIG. 5A , a semiconductor wafer W attached to a back grinding tape B is prepared.

In the protection step, as shown in FIG. 5B , a protection sheet 10 is pasted on the semiconductor wafer W. At this time, the protective sheet 10 is attached to one side of the semiconductor wafer W, and the back grinding tape is attached to the other side. The circuit components are arranged on one side of the semiconductor wafer W. As shown in FIG.

Next, in the mounting step, as shown in FIG. 5C , the back grinding tape is peeled off from the semiconductor wafer W in a state where the semiconductor wafer W is overlapped with the protective sheet 10 . Thereby, the semiconductor wafer W and the protective sheet 10 are overlapped, and the other surface (non-circuit surface which is not the circuit surface) of the semiconductor wafer W is exposed.

In the installation step of the third embodiment, as shown in FIG. 5D , in the state where the semiconductor wafer W overlaps the protective sheet 10, the other side of the exposed semiconductor wafer W is attached to the adhesive tape 20. Agent layer 22. At this time, the protective sheet 10 is attached to one side of the semiconductor wafer W, and the release liner 15 is further attached, so that the semiconductor wafer W can be pressed against the adhesive layer 22 via the protective sheet 10 and the release liner 15. superior. Therefore, the semiconductor wafer W can be attached to the adhesive layer 22 while protecting the circuit surface of the semiconductor wafer W.

Ideally, in the mounting step, the protective sheet 10 is stacked on the semiconductor wafer W in the state where the release liner 15 and the protective sheet 10 are laminated, and the peeling is performed before the protective sheet 10 is divided into pieces in the expanding step. The liner 15 is peeled off from the protective sheet 10 .

In the third embodiment, steps that are not specifically mentioned can be performed in the same manner as each step in the first embodiment, the second embodiment, the fourth embodiment, or the fifth embodiment. In addition, in the third embodiment, the fourth embodiment and the fifth embodiment described below, the above-mentioned removal step described in the first embodiment can be implemented, and the process described in the second embodiment can also be implemented. Remove steps above. In other words, in the removal steps of the third embodiment to the fifth embodiment, the small piece 10' of the protective sheet can be removed by using the same method as the above method, or the small piece 10' of the protective sheet can be removed by using an adhesive tape for peeling T Remove the small piece 10' of the protective sheet.

Next, the fourth embodiment will be described in detail. In addition, in the fourth embodiment, the same description as that of the first to third embodiments is not repeated. In the fourth embodiment, unless otherwise mentioned, the same operations as those of the first to third embodiments can be performed.

"Fourth Implementation Type" The main difference between the manufacturing method of the semiconductor device of the fourth embodiment and the third embodiment is that before the mounting step, the semiconductor wafer W is irradiated with laser light to form a fragile part inside the wafer. Specifically, the method for manufacturing a semiconductor device in the fourth embodiment includes: The stealth processing step is to use laser light to form a weak part inside the semiconductor wafer W with the back grinding tape B attached, so as to prepare the semiconductor wafer W for small pieces; The protection step is to protect the circuit surface of the semiconductor wafer W by attaching the protective sheet 10 to one surface of the semiconductor wafer W; In the installation step, the other side of the semiconductor wafer W (for example, the side opposite to the circuit side) is attached to the dicing tape 20, and the semiconductor wafer W is fixed on the dicing tape 20; The hardening treatment step is to harden the protective sheet 10 by irradiating active energy rays or other hardening treatment, and reduce the adhesive force of the protective sheet 10; The expansion step is to make the semiconductor wafer W and the protective sheet 10 into small pieces by stretching the dicing tape 20; The removal step is to remove the small piece 10' of the protective sheet attached to the semiconductor wafer X; Picking up step, peeling off between the semiconductor wafer X and the adhesive layer 22 and taking out the semiconductor wafer X; and In the bonding step, the semiconductor wafer X is bonded to the adherend.

In the fourth embodiment, as shown in FIG. 6A , a semiconductor wafer W in a state where the back grinding tape B is stacked is prepared.

In the stealth processing step of the fourth embodiment, as shown in FIG. 6B , laser light is irradiated to the semiconductor wafer W in a state where the back grinding tape B is stacked. The back grinding tape B is, for example, attached to the surface of the semiconductor wafer W that is opposite to the circuit surface. Laser light is irradiated from the circuit side of the semiconductor wafer W, for example.

In the protection step of the fourth embodiment, as shown in FIG. 6C , a protective sheet 10 is attached to the semiconductor wafer W in the same manner as in the third embodiment. Thereby, the protective sheet 10 is laminated on one surface (circuit surface) of the semiconductor wafer W, and the back grinding tape B is laminated on the other surface. Then, the back grinding tape B is peeled off from the semiconductor wafer W. As shown in FIG. In addition, the protective sheet 10 may be laminated with a release liner 15 as shown in FIG. 6C.

Then, as shown in FIG. 6D and FIG. 6E , the installation steps can be implemented in the same manner as in the second embodiment (also refer to FIG. 4A ). Next, as shown in FIG. 6F , the protective sheet 10 may be hardened in the same manner as in the second embodiment (see also FIG. 4C ).

In the fourth embodiment, steps that are not specifically mentioned can be performed in the same manner as each step in the first embodiment, the second embodiment, or the third embodiment.

Finally, the fifth embodiment will be described in detail. In addition, in the fifth embodiment, the same description as the first to fourth embodiment will not be repeated. In the fifth embodiment, unless otherwise mentioned, the same operations as those of the first to fourth embodiments can be performed.

"Fifth Implementation Type" The main difference between the manufacturing method of the semiconductor device of the fifth embodiment and the other embodiments is that the semiconductor wafer W is attached to the The adhesive layer 22 of the crystal cutting tape 20 . Specifically, in the manufacturing method of the semiconductor device of the fifth embodiment, as shown in FIG. Back grinding tape B. Also, after laminating the back grinding tape B on one side of the protective sheet 10, the semiconductor wafer W can be laminated on the other side of the protective sheet 10; Before grinding the tape B, the semiconductor wafer W is stacked on the other side of the protective sheet 10 .

In the state where the semiconductor wafer W, the protective sheet 10, and the back grinding tape B are laminated, the surface of the semiconductor wafer W on the side where the circuit components are not arranged is subjected to grinding processing. In detail, as shown in FIG. 7A , polishing (back grinding) is performed with a polishing pad K until the semiconductor wafer W reaches a predetermined thickness. Through the grinding process, the thickness of the semiconductor wafer W is reduced to a predetermined thickness (see FIG. 7B ).

Next, in the mounting step, the surface of the polished semiconductor wafer W (the surface on which no circuit components are arranged) is superimposed on the adhesive layer 22 of the dicing tape 20 . At this time, as shown in FIG. 7C , a protective sheet 10 is attached to the circuit surface of the semiconductor wafer W, and a back grinding tape B is further attached to the protective sheet 10 .

After laminating the semiconductor wafer W on the adhesive layer 22 of the dicing tape 20 , the stealth processing step can be implemented by the same method as the above method. Next, peeling is performed between the protective sheet 10 attached to the semiconductor wafer W and the back-grinding tape B, and the back-grinding tape B is removed (see FIG. 7D ). Moreover, after removing the back grinding tape B, you may implement a stealth processing process.

Then, the hardening treatment step of hardening the protective sheet 10 so as to reduce the adhesion of the protective sheet 10 can be implemented by the same method as the above-mentioned method; the expansion step of making the semiconductor wafer W and the protective sheet 10 smaller; The removing step of removing the small piece 10' of the protective sheet attached to the semiconductor chip X; the picking step of taking out the semiconductor chip X; and the bonding step of bonding the semiconductor chip X to an adherend, etc.

The method of manufacturing an electronic component device (for example, a semiconductor device) according to an embodiment of the present invention is exemplified above, but the present invention is not limited to the method of manufacturing an electronic component device exemplified above. That is, various types used in the manufacturing method of a general electronic component device can be employ|adopted in the range which does not impair the effect of this invention.

For example, as described above, the substrate (such as a semiconductor wafer) used in the manufacturing method of the present invention can be a substrate with circuit constituent elements arranged on both sides as described in the first embodiment. On the other hand, it can also be As described in other embodiments, it may be a substrate on which circuit constituent elements are arranged only on one side. In other words, only one side of the substrate manufactured in the manufacturing method of the present invention may be a circuit surface, or both surfaces may be circuit surfaces.

The matters disclosed in this manual include the following. (I) A method of manufacturing an electronic component device, comprising: A step of laminating a protective sheet for protecting the above-mentioned circuit components on at least one side of the substrate on which the circuit components are disposed; The laminate formed by stacking the aforementioned substrate and the aforementioned protective sheet is divided in the plane direction with a gap to be divided into small pieces, thereby producing a chip of the aforementioned substrate chip and a small piece of the aforementioned protective sheet stacked on top of each other. The step of forming small pieces of the aforementioned laminate; and A step of removing a small piece of the aforementioned protective sheet stacked on the circuit surface of the aforementioned substrate wafer. According to the manufacturing method of the electronic component device of the above (I), since the protective sheet is laminated on the surface of the substrate on which the circuit components are arranged (hereinafter also referred to as the circuit surface), foreign matter can be prevented from adhering to the above-mentioned circuit surface. until the protective sheet is removed. Specifically, when the substrate is chipped in a state where the substrate and the protective sheet are stacked, it is possible to prevent foreign matter such as debris that may be generated along with chipping from adhering to the circuit surface of the substrate chip. Even if foreign matter is attached to the circuit surface of the substrate wafer before the protective sheet is laminated, the foreign matter can be removed when removing a small piece of the protective sheet. Therefore, foreign matter can be suppressed from adhering to the circuit surface of the produced substrate wafer. (II) The method of manufacturing an electronic component device as described in (I) above, further comprising: a step of arranging the circuit surface of the substrate wafer facing the adherend, and bonding the substrate wafer to the adherend. The manufacturing method of the electronic component device of the above-mentioned (II) can suppress the adverse effect caused by the foreign matter entering between the circuit surface of the substrate wafer and the adherend. (III) The method for manufacturing an electronic component device as described in (I) or (II) above, wherein the protective sheet contains a water-soluble polymer compound; In the removing step, the plurality of small pieces of the protective sheet are brought into contact with a liquid containing water to dissolve at least a part of each small piece in the liquid, thereby removing the plurality of small pieces of the protective sheet. According to the manufacturing method of the electronic component device of the above (III), with the liquid, not only the small pieces of the protective sheet can be removed, but also the number of foreign matter adhering to the circuit surface of the substrate wafer can be reduced. In addition, the circuit surface of the substrate wafer can be cleaned by the above-mentioned liquid. (IV) The method of manufacturing an electronic component device as described in (III) above, further comprising, before the removing step, the step of increasing the humidity of the gas in contact with the circuit surface. (V) The method of manufacturing an electronic component device as described in (I) or (II) above, wherein in the removing step, the adhesive tape for peeling off the plurality of small pieces attached to the protective sheet is peeled off, whereby the aforementioned The peeling adhesive tape and the plurality of small pieces of the aforementioned protective sheet are removed. According to the manufacturing method of the electronic component device of said (V), the said protective sheet can be removed relatively easily. (VI) The method for manufacturing an electronic component device as described in (V) above, wherein the protective sheet contains a curable composition; After the protective sheet laminated on the substrate is cured by curing treatment, the laminate of the substrate and the protective sheet is divided into small pieces. According to the manufacturing method of the electronic component device of said (VI), the said protection sheet can be divided|segmented and divided into small pieces more easily as the said protection sheet is cured by hardening process. In addition, the protective sheet can be removed more easily with the adhesive tape for peeling. (VII) The method of manufacturing an electronic component device as described in any one of (II) to (VI) above, wherein the electrode parts respectively arranged on the two surfaces of the aforementioned substrate wafer and serving as the aforementioned circuit constituent elements are connected to each other; In the bonding step, a plurality of the substrate wafers are stacked, and the electrode portion of one of the substrate wafers serving as the adherend is directly connected to the electrode portion of the other substrate wafer. According to the manufacturing method of the electronic component device of the above (VII), since the substrate wafers having suppressed adhesion of foreign matter on the circuit surface are stacked, the amount of foreign matter entering between one of the stacked substrate wafers and the other substrate wafer can be suppressed. Therefore, the electrode portions can be more reliably connected between adjacent substrate wafers. Therefore, the circuits of a plurality of substrate chips can be conducted with each other with high reliability.

The matters disclosed in this specification further include the following. (1) A method of manufacturing a semiconductor device, comprising: A step of laminating a protective sheet for protecting the above-mentioned circuit components on at least one side of the semiconductor wafer and the circuit surface of the side where the circuit components are arranged; The layered product of the above-mentioned semiconductor wafer and the above-mentioned protective sheet stacked on top of each other is divided and divided into small pieces with a gap in the plane direction, thereby producing small pieces of the semiconductor wafer and the above-mentioned protective sheet after the above-mentioned semiconductor wafer is diced. The step of stacking small pieces of the aforementioned laminate; and A step of removing a small piece of the aforementioned protective sheet stacked on the circuit surface of the aforementioned semiconductor wafer. According to the semiconductor device manufacturing method of (1) above, since the protective sheet is laminated on the surface (circuit surface) of the semiconductor wafer on which the circuit is formed, foreign matter can be prevented from adhering to the circuit surface until the protective sheet is removed. Specifically, when the semiconductor wafer is divided into pieces in a state where the semiconductor wafer and the protective sheet are stacked, it is possible to prevent foreign matter such as chips that may be generated along with the dicing from adhering to the circuit surface of the semiconductor wafer. Even if foreign matter is attached to the circuit surface of the semiconductor chip before the protective sheet is laminated, the foreign matter can be removed when a small piece of the protective sheet is removed. Therefore, foreign matter can be suppressed from adhering to the circuit surface of the manufactured semiconductor wafer. (2) The method for manufacturing a semiconductor device as described in (1) above, further comprising: a step of arranging the circuit surface of the semiconductor wafer facing the adherend, and bonding the semiconductor wafer to the adherend. The method for manufacturing a semiconductor device according to the above (2) can suppress adverse effects caused by foreign matter entering between the circuit surface of the semiconductor wafer and the adherend. (3) The method for manufacturing a semiconductor device according to (1) or (2) above, wherein the dicing tape is laminated on one side of the dicing tape in a state where the laminate of the semiconductor wafer and the protective sheet is laminated. By stretching in the plane direction, the above-mentioned laminate is divided into small pieces to produce small pieces of the above-mentioned laminate. (4) The method for manufacturing a semiconductor device according to any one of (1) to (3) above, wherein the protective sheet contains a water-soluble polymer compound; In the removing step, the plurality of small pieces of the protective sheet are brought into contact with a liquid containing water to dissolve at least a part of each small piece in the liquid, thereby removing the plurality of small pieces of the protective sheet. According to the method of manufacturing a semiconductor device of the above (4), by using the liquid, not only small pieces of the protective sheet can be removed, but also the amount of foreign matter adhering to the circuit surface of the semiconductor chip can be reduced. In addition, the circuit surface of the semiconductor chip can be cleaned by the above-mentioned liquid. (5) The method for manufacturing a semiconductor device according to (4) above, wherein the water-soluble polymer compound contains at least one of polyvinyl alcohol and polyvinylpyrrolidone. (6) The method of manufacturing an electronic component device as described in (5) above, further including, before the removing step, the step of increasing the humidity of the gas in contact with the circuit surface. (7) The method for manufacturing a semiconductor device according to any one of (1) to (3) above, wherein in the removing step, the adhesive tape for peeling off the plurality of small pieces attached to the protective sheet is peeled off, by This removes the plurality of small pieces of the aforementioned adhesive tape for peeling and the aforementioned protective sheet. According to the method of manufacturing a semiconductor device of (7) above, the protective sheet can be removed relatively easily. (8) The method of manufacturing a semiconductor device according to (7) above, wherein the protective sheet contains a curable composition; After hardening the protective sheet laminated on the semiconductor wafer by curing treatment, the laminate of the semiconductor wafer and the protective sheet is divided into small pieces. According to the method of manufacturing a semiconductor device of (8) above, the more the protective sheet is hardened by the curing treatment, the easier it is to divide the protective sheet into small pieces. In addition, the protective sheet can be removed more easily with a peeling tape. (9) The method for manufacturing a semiconductor device as described in (8) above, wherein the curable composition contains a compound selected from a compound containing a polymerizable carbon-carbon double bond in the molecule, a compound containing a glycidyl group in the molecule, At least one of hardening compounds in the group of a compound containing an isocyanate group in a molecule, a compound containing a carboxyl group in a molecule, and a compound containing a hydroxyl group in a molecule. (10) The method of manufacturing a semiconductor device as described in any one of (1) to (9) above, wherein the semiconductor wafer has electrode portions respectively arranged on both surfaces and conducting with each other; In the bonding step, at least two semiconductor wafers are stacked, and the electrode portion of one semiconductor wafer serving as the adherend is directly connected to the electrode portion of the other semiconductor wafer. According to the method of manufacturing a semiconductor device of (10) above, since the semiconductor wafers in which adhesion of foreign matter on the circuit surface has been suppressed are stacked, the amount of foreign matter entering between one stacked semiconductor wafer and another semiconductor wafer can be suppressed. Therefore, the electrode portions of adjacent semiconductor wafers can be more reliably connected to each other. Therefore, circuits of a plurality of semiconductor chips can be conducted with each other with high reliability. [Example]

Next, the present invention will be described in more detail with experimental examples, but the present invention is not limited thereto.

As an example of a method of manufacturing an electronic component device, a method of manufacturing a semiconductor device is implemented as follows.

A commercially available product (product name "V-12SR" manufactured by Nitto Denko Co., Ltd.) was prepared as a dicing tape. And use silicon bare wafers instead of semiconductor wafers. The protective sheet was produced as follows. When producing the protective sheet, the composition for the protective sheet containing a solvent is coated on one side of the release liner and the solvent is volatilized, thereby laminating the protective sheet and the release liner. Further, the release liner is pasted on the protection sheet to form a state in which the protection sheet is arranged between the two release liners. Also, a silicon bare wafer (disc shape with a thickness of 50 μm and a diameter of 300 mm) is used instead of a semiconductor wafer.

[Example 1] (Making of protective sheet a) Polyvinyl alcohol (commercially available) having a degree of saponification of 65 (mol %) and an average degree of polymerization of 240 was prepared. After dispersing this polyvinyl alcohol (PVA) in water, it was heated to 90 degreeC and dissolved, and the PVA aqueous solution was prepared. This PVA aqueous solution was coated on a release liner a (PET film, thickness 50 μm). The release liner a has a surface treated with silicone release treatment, and the above-mentioned PVA aqueous solution is coated on this surface using an applicator. Furthermore, drying treatment was carried out at 110° C. for 2 minutes to form a protective sheet with a thickness of 10 μm laminated on one side of the release liner a. Then, a release liner b (PET film, thickness 25 μm) was laminated on the exposed surface of the protective sheet. Also, the release liner b has a surface on which silicone release treatment has been applied, and this surface is attached to the protective sheet. In this way, a protective sheet a sandwiched between two release liners was produced. (Installation steps and protection steps) The prepared protective sheet a was peeled off and the release liner b was removed to expose one side of the protective sheet a. Attach this exposed surface to the silicon bare wafer stacked on the dicing tape. Specifically, the wafer is bonded to the dicing tape in a state where the silicon bare wafer and the glass carrier are bonded. Then, the glass carrier is peeled off from the wafer to expose one side of the wafer. The exposed surface of the wafer (the surface opposite to the surface in contact with the dicing tape) and the exposed surface of the protective sheet a after peeling off the release liner b are brought into contact with each other and bonded together. For lamination, use the MV3000 vacuum mounter manufactured by Nitto Seiki Co., Ltd., which heats the stage temperature to 90°C. In this way, the crystal cutting tape, the silicon bare wafer and the protective sheet a are sequentially laminated. (Invisible processing step) Next, the bare silicon wafer was irradiated with laser light using DFL7361 manufactured by DISCO to form a fragile part inside the wafer. After that, the release liner a was peeled off. (extended steps) Next, use DDS2300 manufactured by DISCO to cut the laminate of wafer and protective sheet into small pieces at -15°C and 200mm/s to obtain chip (chip, die) after chipping (10mm×10mm rectangular shape). ) and protective sheet. (step removed) Then, the protection sheet was removed by spraying water on the protection sheet using the water cleaning mechanism of the cutting device DDS2300 manufactured by DISCO, thereby bringing the protection sheet into contact with water. Thereby, one surface (temporary circuit surface) of the chip (chip, die) is exposed.

[Example 2] (Preparation of protective sheet b) In a reaction vessel equipped with a condenser tube, a nitrogen gas introduction tube, a thermometer and a stirring device, add: 11 parts by mass of hydroxyethyl acrylate (HEA) as a monomer, 2- 89 parts by mass of ethylhexyl ester (2EHA), and 0.2 parts by mass of azobisisobutyronitrile (AIBN) as a thermal polymerization initiator. Furthermore, butyl acetate as a solvent for reaction was added so that the concentration of the said monomer might be 36 mass %. Then, polymerization was carried out at 62° C. for 4 hours under a nitrogen stream, and a polymerization treatment was carried out at 75° C. for 2 hours, whereby an acrylic polymer solution A was synthesized. To this acrylic polymer solution A were added: 13 parts by mass of 2-methacryloxyethyl isocyanate (product name "Karenz MOI", manufactured by Showa Denko Co., Ltd.), and 0.07 parts by mass of dibutyltin dilaurate. Next, an addition reaction process was performed at 50 degreeC for 12 hours under air flow, and the acrylic polymer solution A' was obtained. Next, 0.8 parts by mass of a polyisocyanate compound (product name "TAKENATE D-101A", manufactured by Mitsui Chemicals Co., Ltd.) as a crosslinking agent and a photopolymerization initiator (product Name "Omnirad 127", manufactured by IGM Corporation) 5 parts by mass to prepare an adhesive solution (hereinafter referred to as adhesive solution A). Next, the above-mentioned adhesive solution A was coated on the silicone release-treated surface of the release liner a (PET film, thickness 50 μm) having the silicone release-treated surface with an applicator. Drying treatment was carried out at 120° C. for 2 minutes to form a protective sheet b with a thickness of 30 μm laminated on one side of the release liner a. Then, the silicone release-treated surface of the release liner b (PET film, thickness 25 μm) having the silicone release-treated surface was attached to the exposed surface of the protective sheet b. It stored at 50 degreeC for 24 hours, and produced the UV curable protective sheet. (Installation step and protection step) The release liner b was peeled off from the prepared protective sheet to expose one side of the protective sheet. Attach this exposed surface to the silicon bare wafer stacked on the dicing tape. Specifically, the wafer is bonded to the dicing tape in a state where the silicon bare wafer and the glass carrier G are bonded. Then, the glass carrier G is peeled off from the wafer to expose one side of the wafer. The exposed surface of the wafer (the surface opposite to the surface in contact with the dicing tape) and the exposed surface of the protective sheet b from which the release liner b has been peeled off are brought into contact and bonded together. For lamination, use the MV3000 vacuum mounter manufactured by Nitto Seiki Co., Ltd., which heats the table temperature to 30°C. In this way, the crystal cutting tape, the silicon bare wafer and the protective sheet a are sequentially laminated. (Stealth processing step) DFL7361 manufactured by DISCO Corporation was used to irradiate the wafer with laser light to form a fragile part inside the wafer. (Hardening Treatment) Next, the protective sheet was irradiated with 300 mJ/cm ² of ultraviolet rays from the side opposite to the side where the dicing tape was placed (the release liner a side) to harden the protective sheet. Next, the release liner a was peeled off from the protective sheet. (Expansion step) Next, use DDS2300 manufactured by DISCO Corporation to cut the laminate of wafer and protective sheet into small pieces at -15°C and 200mm/s to obtain chip (chip, die) and protective sheet after dicing material. (Removal step) Next, in order to remove the protective sheet after dicing, use a laminator to attach an adhesive tape for peeling (adhesive tape, product name "No. 360UL"). Then, peel off the peel-off adhesive tape. Thereby, the peeling adhesive tape and the protective sheet are removed, and one surface (temporary circuit surface) of a chip (chip, die) is exposed.

＜Physical property measurement of protective sheet＞ (silicon adhesion) According to the above-mentioned measurement conditions and measurement methods, the peeling force of the protective sheet to the silicon bare wafer was measured at 25°C. (breaking strength and elongation at break) The breaking strength and breaking elongation were measured at -15°C by the above-mentioned measuring conditions and measuring methods. (tensile modulus of elasticity) The tensile modulus of elasticity was measured at -15°C and 25°C, respectively, according to the above-mentioned measurement conditions and measurement methods. (surface free energy) The surface free energy of the protective sheet at 25° C. was calculated by the above-mentioned measurement conditions, measurement methods, and calculation methods (but only in Example 1).

[comparative example] A chip (chip, die) was produced in the same manner as in Example 1 or Example 2 except that the protective sheet was not bonded to the silicon bare wafer. Specifically, a bare silicon wafer attached to a dicing tape is irradiated with laser light using DFL7361 manufactured by DISCO to form a fragile part inside the wafer. Then, the wafer was diced into small pieces at -15° C. and 200 mm/s using DDS2300 manufactured by DISCO Corporation.

＜Evaluation: Adhesion of foreign matter on the surface of a chip (chip, die)＞ Observe the surface of the exposed chip (chip, die) (the surface except the protective sheet) with a digital microscope, and count the number of foreign objects in a randomly selected 10×10mm square range. When the number of foreign objects was 10 or more, it was judged as bad (×), and when the number of foreign objects was less than 10, it was judged as good (◯). In Example 1 and Comparative Example, photographs when observing the surface of a chip (chip, die) with foreign substances attached are shown in Fig. 8 and Fig. 9, respectively.

Each manufacturing method of the Example and the comparative example was implemented as mentioned above. Table 1 shows the details of the protective sheet used in each production method and the evaluation results.

〔Table 1〕 protective sheet Example 1 Example 2 comparative example type water soluble UV curing Thickness [μm] 10 30 Si adhesion [N/10mm](25℃) 7.9 Before hardening: 1 After hardening: 0.1 Breaking Strength[MPa](-15℃) 42 Hardened: 18 Elongation at break[%](-15℃) 3 Hardened: 25 Tensile modulus of elasticity[GPa](-15℃) 3.3 After hardening: 0.2 Tensile modulus of elasticity [GPa] (25°C) 2.9 After hardening: 0.05 Surface free energy [mJ/m ² ] 55 - Ease of cutting good good Ease of removal good good The number of foreign matter on the surface of the chip (chip, die) [pcs/100mm ² ] Good (○): 3 Good (○): 6 Bad (×): 200 or more

From the above evaluation results, it can be seen that by manufacturing the semiconductor device by the method of manufacturing the semiconductor device of the embodiment, the adhesion of foreign matter to the circuit surface of the chip (chip, die) can be suppressed. Thereby, the electrode part of the object to be bonded and the electrode part of the chip (chip, die) can be made to adhere and conduct reliably. In particular, when stacking a plurality of semiconductor wafers each having electrode portions formed on both surfaces and conducting with each other, the electrode portions of adjacent semiconductor wafers can be brought into close contact with each other and be reliably conducted. Therefore, the reliability of the conductive performance of the fabricated semiconductor device can be sufficiently maintained.

By carrying out the manufacturing method of the electronic component device of the above-mentioned embodiment, it is possible to efficiently manufacture a semiconductor device or the like in which a plurality of semiconductor chips are laminated. [Cross-reference to related applications]

This case claims the priority of Japanese Patent Application No. 2021-164051 and Japanese Patent Application No. 2022-063382, and these applications are incorporated by reference into the description of this case. [Industrial Utilization]

The manufacturing method of the electronic component device of this invention is suitably used for manufacturing the semiconductor device provided with a semiconductor integrated circuit etc., for example.

10: Protective sheet 10': small piece of protective sheet 15:Peel off liner 20: Cut crystal belt 21: Substrate layer 22: Adhesive layer G: glass carrier W: semiconductor wafer X: semiconductor wafer V: through hole D: electrode part T: Adhesive tape for peeling off B: Back grinding tape

[FIG. 1A] A cross-sectional view of an example of a substrate cut in the thickness direction. [FIG. 1B] A cross-sectional view schematically showing an example of the wetting step. [FIG. 1C] A cross-sectional view schematically showing an example of a protection step. [FIG. 1D] A cross-sectional view schematically showing an example of a protection step. [FIG. 1E] A cross-sectional view schematically showing an example of the state before the laminate of the substrate and the protective sheet is fragmented. [FIG. 1F] A cross-sectional view schematically showing an example of a state in which a laminate of a substrate and a protective sheet is fragmented. [FIG. 1G] A cross-sectional view schematically showing an example of the removal of the small piece of the protective sheet stacked on the small piece of the substrate. [FIG. 2A] A cross-sectional view of an example of a protective sheet and a release liner cut in the thickness direction. [FIG. 2B] A cross-sectional view of an example of a cut crystal tape cut in the thickness direction. [FIG. 2C] A cross-sectional view of an example of a semiconductor wafer serving as a substrate cut in the thickness direction. [FIG. 2D] A cross-sectional view of an example of a semiconductor wafer manufactured by dividing a semiconductor wafer as a substrate in the thickness direction. [FIG. 3A] A cross-sectional view schematically showing the state before the mounting step in the first embodiment. [FIG. 3B] A cross-sectional view schematically showing the state of the mounting step in the first embodiment. [FIG. 3C] A cross-sectional view schematically showing the state of the mounting step in the first embodiment. [FIG. 3D] A cross-sectional view schematically showing the state of the wetting step in the first embodiment. [FIG. 3E] A cross-sectional view schematically showing the state of the protection step in the first embodiment. [FIG. 3F] A cross-sectional view schematically showing the state of the stealth processing step in the first embodiment. [FIG. 3G] A cross-sectional view schematically showing the state of the expansion step in the first embodiment. [FIG. 3H] A cross-sectional view schematically showing the state of the removal step in the first embodiment. [FIG. 3I] A cross-sectional view schematically showing the state of the pick-up step in the first embodiment. [FIG. 3J] A cross-sectional view schematically showing the state of the bonding step in the first embodiment. [FIG. 4A] A cross-sectional view schematically showing the state of the mounting step in the second embodiment. [FIG. 4B] A cross-sectional view schematically showing the state of the stealth processing step in the second embodiment. [FIG. 4C] A cross-sectional view schematically showing the state of hardening the protective sheet in the second embodiment. [FIG. 4D] A cross-sectional view schematically showing a state in which the release liner is peeled off after hardening the protective sheet in the second embodiment. [FIG. 4E] A cross-sectional view schematically showing the state of the expansion step in the second embodiment. [FIG. 4F] A cross-sectional view schematically showing the state of the removal step in the second embodiment. [FIG. 5A] A cross-sectional view schematically showing the state of the semiconductor wafer and the backgrinding tape in the third embodiment. [FIG. 5B] A cross-sectional view schematically showing the state of the protection step in the third embodiment. [FIG. 5C] A cross-sectional view schematically showing the situation before the mounting step in the third embodiment. [FIG. 5D] A cross-sectional view schematically showing the state of the mounting step in the third embodiment. [FIG. 6A] A cross-sectional view schematically showing the state of the semiconductor wafer and the backgrinding tape in the fourth embodiment. [FIG. 6B] A cross-sectional view schematically showing the state of the stealth processing step in the fourth embodiment. [FIG. 6C] A cross-sectional view schematically showing the state of the protection step in the fourth embodiment. [FIG. 6D] A cross-sectional view schematically showing the situation before the mounting step in the fourth embodiment. [FIG. 6E] A cross-sectional view schematically showing the state of the mounting step in the fourth embodiment. [FIG. 6F] A cross-sectional view schematically showing the state of hardening the protective sheet in the fourth embodiment. [FIG. 7A] A cross-sectional view schematically showing the state of grinding in the fifth embodiment. [FIG. 7B] A cross-sectional view schematically showing the state after grinding in the fifth embodiment. [FIG. 7C] A cross-sectional view schematically showing the state after the mounting step in the fifth embodiment. [FIG. 7D] A cross-sectional view schematically showing the state after the stealth processing step in the fifth embodiment. [FIG. 8] is a photograph showing the observation of the surface of the semiconductor wafer produced by the production method of Example 1. [FIG. [FIG. 9] is a photograph showing the observation of the surface of the semiconductor wafer produced by the production method of the comparative example.

10': small piece of protective sheet

I: Manufacturing method of the first embodiment

Claims (6)

A method of manufacturing an electronic component device, comprising: A step of laminating a protective sheet for protecting the circuit components on at least one side of the substrate on which the circuit components are disposed; The laminate formed by stacking the substrate and the protective sheet is divided in the plane direction with a space therebetween to be divided into small pieces, thereby producing a substrate wafer after the chipping of the substrate is stacked with small pieces of the protective sheet. the step of forming small pieces of the laminate; and A step of removing a small piece of the protective sheet stacked on the circuit surface of the substrate wafer. The method of manufacturing an electronic component device according to claim 1, further comprising: a step of arranging the circuit surface of the substrate wafer facing the adherend, and bonding the substrate wafer and the adherend. The method of manufacturing an electronic component device according to claim 1 or 2, wherein the protective sheet contains a water-soluble polymer compound; In the removing step, the plurality of small pieces of the protective sheet is brought into contact with a liquid containing water to dissolve at least a part of each small piece in the liquid, thereby removing the plurality of small pieces of the protective sheet. The method of manufacturing an electronic component device according to claim 1 or 2, wherein in the removing step, the peeling adhesive tapes of the plurality of small pieces attached to the protective sheet are peeled off, whereby the peeling adhesive The tape is removed along with several small pieces of the protective sheet. The method of manufacturing an electronic component device according to claim 4, wherein the protective sheet contains a curable composition; After the protective sheet laminated on the substrate is cured by curing treatment, the laminate of the substrate and the protective sheet is divided into small pieces. The method of manufacturing an electronic component device as described in claim 2, wherein the electrode parts respectively arranged on the two surfaces of the substrate wafer and serving as the circuit constituent elements are connected to each other; In the bonding step, at least two substrate wafers are stacked, and the electrode portion of one substrate wafer serving as the adherend is directly connected to the electrode portion of the other substrate wafer.

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