JP2023055187A - Manufacturing method of electronic component device - Google Patents

Abstract

To provide a manufacturing method of an electronic component device, capable of suppressing adhesion of a foreign material to a circuit surface of a manufactured substrate chip.SOLUTION: A manufacturing method of an electronic component device, contains: a step of overlapping a protective sheet for protecting a circuit structure element to a circuit surface which is at least one surface of a substrate and in which the circuit surface element is arranged; a step of manufacturing a small piece of a lamination material in which a substrate chip obtained by minimizing the substrate and a small piece 10' of the protective sheet are overlapped by dividing and minimizing the lamination material to which the substrate and the protective sheet are overlapped to a surface direction so as to have an interval; and a step of removing the small piece of the protective sheet overlapped to the circuit surface of the substrate chip.SELECTED DRAWING: Figure 3H

Description

The present invention relates to a method of manufacturing an electronic component device for manufacturing, for example, a semiconductor device having a semiconductor integrated circuit.

2. Description of the Related Art Conventionally, there has been known a method of manufacturing an electronic component device that is adopted when manufacturing a semiconductor device having a semiconductor integrated circuit. In this type of method for manufacturing an electronic component device, for example, a semiconductor wafer as a substrate is attached to a dicing tape having a base layer and an adhesive layer, and the dicing tape is stretched so as to expand the area of the semiconductor wafer. The wafer is divided into small pieces of semiconductor chips. Then, the semiconductor chip, which is the substrate cut into small pieces, is adhered to the adherend.

In general, this type of electronic component device manufacturing method includes a pre-process of forming a circuit surface on which highly integrated circuit components are arranged on one side of a wafer, and cutting out chips from the wafer on which the circuit surface is formed. and a post-process of assembling.

In the post-process, for example, a wafer (semiconductor wafer) on which a circuit surface is formed is formed with fragile portions to be diced into small chips (dies), and a dicing tape is adhered to the surface opposite to the circuit surface. Affix the adhesive layer. By stretching the dicing tape in the plane direction with the semiconductor wafer attached to the adhesive layer of the dicing tape, the semiconductor wafer is divided into semiconductor chips with the fragile portions as boundaries. After that, the semiconductor chips formed into small pieces are separated from the adhesive layer of the dicing tape.

Post-processes such as those described above include, for example, a stealth processing process in which fragile portions are formed on the wafer by laser light or the like in order to divide the wafer into small chips (dies), and a surface opposite to the circuit surface of the semiconductor wafer. A mounting process in which the semiconductor wafer is fixed by applying it to the dicing tape, an expanding process in which the semiconductor wafer is divided into small pieces (die) by stretching the dicing tape in the plane direction, and a semiconductor chip is peeled off from the adhesive layer. and a joining step of joining the taken-out semiconductor chip to an adherend. A semiconductor integrated circuit is manufactured through these steps, for example.

In the manufacturing method of the electronic component device as described above, for example, in the bonding step, the circuit surface of the semiconductor chip is placed on the adherend, and the two are bonded together (so-called flip-chip bonding).

As a method of manufacturing this type of electronic component device, for example, a semiconductor chip and an adherend are connected via bumps projecting from the circuit surface of the semiconductor chip and a conductive material (such as solder) on the surface of the adherend. manufacturing methods are known for electrically connecting the Specifically, as a method for manufacturing this type of electronic component device, an electrode part arranged on the circuit surface of the semiconductor chip and a There is known a method of manufacturing an electronic component device in which an electrode portion of an adherend is electrically connected (for example, Patent Literature 1).

Specifically, the method for manufacturing an electronic component device described in Patent Document 1 includes an adherend, a semiconductor element electrically connected to the adherend, and a space between the adherend and the semiconductor element. A manufacturing method for manufacturing an electronic component device comprising an underfill material that fills with
a step of preparing a semiconductor element with an underfill material in which a specific underfill material is attached to the semiconductor element;
a connecting step of electrically connecting the semiconductor element and the adherend while filling the space between the semiconductor element and the adherend with the underfill material.
More specifically, the specific underfill material has a melt viscosity of 50 Pa·s or more and 3000 Pa·s or less at 150° C. before heat treatment,
When the melt viscosity at 150°C before the heat treatment is η1 and the melt viscosity at 150°C after heat treatment at 130°C for 1 hour is η2, the viscosity change rate [(η2/η1) × 100] is 500%. and
Let Qt be the total calorific value in the temperature rising process from -50°C to 300°C in DSC measurement, and Qh be the total calorific value in the temperature rising process from -50°C to 300°C after heating at 175°C for 2 hours. The reaction rate {[(Qt−Qh)/Qt]×100} is 90% or more.

According to the method for manufacturing an electronic component device described in Patent Document 1, the electronic component device is manufactured using an underfill material having a specific viscosity change rate, melt viscosity, and reaction rate, so that the manufacturing efficiency can be improved. can be done.

JP 2015-170754 A

By the way, for example, in the above bonding process, there is a case where the bonding is performed so that the gap between the adherend and the semiconductor chip becomes smaller. For example, there is a case where a semiconductor chip that has already been bonded to a substrate or the like becomes an adherend, another semiconductor chip is bonded to this semiconductor chip, and the same flip-chip bonding as described above is repeated to stack the semiconductor chips. At this time, for example, the electrode portions are directly connected between adjacent semiconductor chips. In particular, when the electrode portions are directly connected to each other in this way, there is almost no gap between the semiconductor chips, so if foreign matter adheres to the circuit surface of the semiconductor chip, it becomes difficult to implement reliable bonding. obtain.
For example, when a semiconductor wafer, which is a substrate, is cut into small pieces as described above, a part of the semiconductor wafer is generated as minute pieces and may adhere to the circuit surface of the semiconductor chip. . Therefore, there is a demand for a method of manufacturing an electronic component device that can prevent this type of foreign matter from adhering to the circuit surface of a substrate chip such as a semiconductor chip.
If a large amount of foreign matter adheres to the circuit surface of a substrate chip such as a semiconductor chip, an electronic component device composed of the substrate chip to which a large amount of foreign matter adheres will be damaged regardless of whether or not the bonding process described above is performed. , the reliability of the product may decrease.

However, it cannot be said that a method for manufacturing an electronic component device capable of suppressing adhesion of foreign matter to the circuit surface of a circuit board chip that has been cut into small pieces has been sufficiently studied.

Accordingly, it is an object of the present invention to provide a method of manufacturing an electronic component device that can prevent foreign matter from adhering to the circuit surface of a substrate chip to be manufactured.

In order to solve the above problems, a method for manufacturing an electronic component device according to the present invention includes:
a step of superposing a protective sheet for protecting the circuit components on at least one surface of the substrate on which the circuit components are arranged;
The laminate in which the substrate chip obtained by dividing the substrate into small pieces and the small pieces of the protective sheet are overlapped with each other by dividing the laminate in which the substrate and the protective sheet are overlapped with each other into small pieces by dividing the laminate into small pieces so as to leave an interval in the surface direction. a step of making a piece of
and removing a small piece of the protective sheet that overlaps the circuit surface of the substrate chip.

According to the method for manufacturing an electronic component device described above, the protective sheet is superimposed on the surface of the substrate on which the circuit components are arranged (hereinafter also referred to as the circuit surface). It is possible to prevent foreign matter from adhering to the surface. Specifically, when the substrate is cut into small pieces while the substrate and the protective sheet are overlapped, it is possible to prevent foreign matter such as fragments that may be generated during the cutting into small pieces from adhering to the circuit surface of the substrate chip. Even if foreign matter adheres to the circuit surface of the substrate chip before the protective sheet is overlaid, the foreign matter can also be removed when the small piece of the protective sheet is removed.
Therefore, it is possible to prevent foreign matter from adhering to the circuit surface of the manufactured substrate chip.

The above-described method for manufacturing an electronic component device may further include the step of placing the circuit surface of the substrate chip facing an adherend and joining the substrate chip and the adherend.
In such a method of manufacturing an electronic component device, it is possible to suppress adverse effects caused by foreign matter that has entered between the circuit surface of the substrate chip and the adherend.

In the above method for manufacturing an electronic component device, the protective sheet contains a water-soluble polymer compound,
In the removing step, the plurality of small pieces of the protective sheet may be removed by contacting a liquid containing water with the plurality of small pieces of the protective sheet to dissolve at least a portion of each small piece in the liquid. good.
According to such a method for manufacturing an electronic component device, the above-described liquid can not only remove small pieces of the protective sheet, but also reduce the number of foreign substances adhering to the circuit surface of the substrate chip. Also, the circuit surface of the substrate chip can be cleaned with the liquid.

In the method for manufacturing an electronic component device described above, in the step of removing, the plurality of small pieces of the protective sheet are removed together with the adhesive peeling tape by peeling off the adhesive peeling tape attached to the plurality of small pieces of the protective sheet. may be removed.
According to this method of manufacturing an electronic component device, the protective sheet can be removed relatively easily.

In the above method for manufacturing an electronic component device, the protective sheet contains a curable composition,
After curing the protective sheet overlapping the substrate by a curing treatment, the laminate of the substrate and the protective sheet may be divided into small pieces.
According to such a method for manufacturing an electronic component device, the protection sheet is hardened by the hardening process, so that the protection sheet can be divided into small pieces more easily. In addition, the protective sheet can be removed more easily with the peeling adhesive tape.

In the method for manufacturing an electronic component device described above, the electrode portions as the circuit components arranged on both surfaces of the substrate chip are electrically connected to each other,
In the bonding step, at least two of the substrate chips may be stacked and the electrode portion of one of the substrate chips and the electrode portion of the other substrate chip, which are the adherends, may be directly connected to each other. good.
According to this method of manufacturing an electronic component device, since the substrate chips are stacked to prevent foreign matter from adhering to the circuit surface, the number of foreign matter entering between one substrate chip and the other substrate chip is reduced. can be suppressed. Therefore, it is possible to more reliably connect the electrode portions between the adjacent substrate chips. Thus, circuits of a plurality of substrate chips are reliably conducted to each other.

According to the method of manufacturing an electronic component device according to the present invention, it is possible to prevent foreign matter from adhering to the circuit surface of the manufactured substrate chip.

Sectional drawing which cut|disconnected an example of a board|substrate in the thickness direction. Sectional drawing which shows typically the mode of an example of a moistening process. Sectional drawing which shows typically the mode of an example of a protection process. Sectional drawing which shows typically the mode of an example of a protection process. FIG. 4 is a cross-sectional view schematically showing an example of a state before the laminate of the substrate and the protective sheet is cut into small pieces. FIG. 4 is a cross-sectional view schematically showing an example of how a laminate of a substrate and a protective sheet is cut into small pieces. FIG. 4 is a cross-sectional view schematically showing an example of how a small piece of a protective sheet overlapping a small piece of a substrate is removed. FIG. 2 is a cross-sectional view of an example of a protective sheet and a release liner cut in the thickness direction; Sectional drawing which cut|disconnected an example of a dicing tape in thickness direction. FIG. 2 is a cross-sectional view of an example of a semiconductor wafer as a substrate cut in the thickness direction; FIG. 2 is a cross-sectional view of an example of a semiconductor chip produced by dividing a semiconductor wafer as a substrate, cut in the thickness direction; FIG. 4 is a cross-sectional view schematically showing a state before a mounting process in the first embodiment; FIG. 4 is a cross-sectional view schematically showing a state of a mounting process in the first embodiment; FIG. 4 is a cross-sectional view schematically showing a state of a mounting process in the first embodiment; Sectional drawing which represents typically the mode of the moistening process in 1st Embodiment. FIG. 4 is a cross-sectional view schematically showing a state of a protection step in the first embodiment; Sectional drawing which represents typically the mode of the stealth processing process in 1st Embodiment. Sectional drawing which represents typically the mode of the expansion process in 1st Embodiment. FIG. 4 is a cross-sectional view schematically showing a state of a removing step in the first embodiment; FIG. 4 is a cross-sectional view schematically showing a state of a pick-up process in the first embodiment; FIG. 4 is a cross-sectional view schematically showing a state of a bonding step in the first embodiment; FIG. 10 is a cross-sectional view schematically showing a state of a mounting process in the second embodiment; Sectional drawing which represents typically the mode of the stealth processing process in 2nd Embodiment. FIG. 7 is a cross-sectional view schematically showing how the protective sheet is cured according to the second embodiment. FIG. 11 is a cross-sectional view schematically showing how the release liner is peeled off after the protective sheet is cured in the second embodiment. Sectional drawing which represents typically the mode of the expansion process in 2nd Embodiment. Sectional drawing which represents typically the mode of the removal process in 2nd Embodiment. FIG. 5 is a cross-sectional view schematically showing the state of a semiconductor wafer and a back grind tape in a third embodiment; Sectional drawing which represents typically the mode of the protection process in 3rd Embodiment. FIG. 11 is a cross-sectional view schematically showing a state before a mounting step in the third embodiment; FIG. 11 is a cross-sectional view schematically showing a state of a mounting process in the third embodiment; FIG. 11 is a cross-sectional view schematically showing the states of a semiconductor wafer and a back grind tape in a fourth embodiment; Sectional drawing which represents typically the mode of the stealth processing process in 4th Embodiment. Sectional drawing which represents typically the mode of the protection process in 4th Embodiment. FIG. 11 is a cross-sectional view schematically showing the state before a mounting step in the fourth embodiment; FIG. 11 is a cross-sectional view schematically showing a state of a mounting process in the fourth embodiment; FIG. 11 is a cross-sectional view schematically showing how the protective sheet is cured according to the fourth embodiment. Sectional drawing which represents typically the mode of the grinding process in 5th Embodiment. Sectional drawing which represents typically the mode after the grinding process in 5th Embodiment. FIG. 11 is a cross-sectional view schematically showing a state after a mounting process in the fifth embodiment; Sectional drawing which represents typically the mode after the stealth processing process in 5th Embodiment. 4 is a photograph showing how the surface of the semiconductor chip manufactured by the manufacturing method of Example 1 is observed. A photograph showing a state of observing the surface of a semiconductor chip manufactured by a manufacturing method of a comparative example.

An embodiment of a method for manufacturing an electronic component device according to the present invention will be described below with reference to the drawings.

The method for manufacturing the electronic component device of this embodiment includes:
A step of superposing a protective sheet 10 for protecting the circuit components on at least one surface of the substrate on which the circuit components are arranged (protection step);
By dividing the laminate in which the substrate and the protective sheet 10 are overlapped with each other into small pieces with a space in the plane direction, the substrate chip formed by the small pieces of the substrate and the small pieces of the protective sheet 10 are overlapped with each other. a step of making a piece of laminate (expanding step);
and a step of removing a small piece of the protective sheet 10 overlapping the circuit surface of the substrate chip (removing step).
The method of manufacturing an electronic component device according to the present embodiment further includes a step of bonding the substrate chip and the adherend with the circuit surface of the substrate chip facing the adherend (bonding step). It's okay.

The method of manufacturing an electronic component device according to the present embodiment may further include a step of increasing the humidity of the gas in contact with the circuit surface Sa (moistening step) before the protective sheet is superimposed on the circuit surface.

At least one surface of the substrate is protected by the protective sheet 10 in the manufacturing method of the electronic component device of the present embodiment. The surface to be protected (the circuit surface Sa on which the circuit components are arranged) may be only one surface of the substrate or both surfaces.

The material of the substrate S is not particularly limited as long as it has a plate shape as shown in the cross-sectional view of FIG. 1A. Examples of substrates include semiconductor wafers, substrates that constitute CMOS (Complementary Metal Oxide Semiconductor) or MEMS (Micro Electro Mechanical Systems), substrates that constitute pseudo wafers, wiring substrates, and the like.
Circuit components are arranged on at least one side of the substrate. The surface of the substrate on which the circuit components are arranged is the circuit surface. Circuit components include, for example, wiring, electrode portions, or elements such as transistors, diodes, or sensors (light receiving sensors, vibration sensors, or the like).
On the circuit surface protected by the protective sheet 10, for example, only elements may be arranged, or only electrode portions may be arranged. In other words, at least one of the circuit components should be placed on the circuit surface protected by the protective sheet 10 . At least one of the circuit components is covered and protected by the protective sheet 10 .

The wetting step described above is performed as necessary. The wetting step described above is particularly effective when a protective sheet 10 containing a water-soluble polymer compound (described later in detail) is employed. The wetting step can be carried out, for example, by contacting the circuit surface Sa with a gas containing water vapor, or by spraying a mist of water on the circuit surface Sa, as shown in FIG. 1B. Alternatively, it can be carried out by applying water to the circuit surface Sa. By performing the wetting step, the adhesion of the protective sheet 10 containing the water-soluble polymer compound to the circuit surface Sa can be enhanced.

In the protection process described above, a protective sheet 10 is placed on the surface (circuit surface) of the substrate on which one of the circuit components is arranged (see FIG. 1C). In other words, the protective sheet 10 may be overlaid on the circuit surface on which the wiring is arranged as the circuit component, or the protective sheet 10 may be overlapped on one side of the substrate on which the sensor is arranged as the circuit component. A protective sheet 10 may be placed on one side of the substrate on which the electrodes are arranged as circuit components. In the protection process described above, the protection sheet 10 is placed on at least one surface of the substrate so as to cover the circuit components with the protection sheet 10 .

As shown in FIGS. 1D and 2A, the protective sheet 10 is formed in a sheet shape and has flexibility that allows it to be deformed with a relatively weak force. Moreover, the protective sheet 10 described above has adhesiveness that allows it to adhere to the substrate S. As shown in FIG. A release liner 15 may be superimposed on one or both surfaces of the protective sheet 10 before or during the manufacturing process.
In addition, each figure in drawing is a schematic diagram, and is not necessarily the same as the length-to-width ratio in the real thing. The same applies to other drawings.

In the expanding process described above, a substrate S having a fragile portion for breaking formed therein is prepared, as shown in FIG. 1E, for example. Next, as shown in FIG. 1F, for example, with the protective sheet 10 placed on one surface of the substrate S, the laminate of the substrate S and the protective sheet 10 is divided into small pieces. A dicing tape 20 arranged on the other surface side of the substrate S is used when dividing into small pieces, and the dicing tape 20 is stretched in the surface direction so as to increase the surface area of the dicing tape 20 . As a result, the laminate of the substrate S and the protective sheet 10 is divided into small pieces, and the interval between the substrates S adjacent to each other is widened along the surface direction.

The dicing tape 20 described above includes a base layer 21 and an adhesive layer 22 overlaid on the base layer 21, as shown in FIG. 2B. A commercially available product can be used as the dicing tape 20 .

In the above removal step, as schematically shown in FIG. 1G, at least a portion of the plurality of small pieces 10' of the protective sheet are dissolved, or each small piece 10' is peeled off from the small piece S' of the substrate. removes each piece 10' of the protective sheet overlying the piece S' of the substrate.

In the bonding process described above, for example, the small piece S' of the substrate is bonded to the adherend Z directly or via a predetermined member. In addition, in the bonding step, for example, a plurality of substrate pieces S' may be stacked. Further, for example, a small piece S' of the substrate to which the coating resin is adhered may be joined to the adherend Z. FIG.
Examples of the adherend Z include an interposer, a wiring circuit board, or a small piece of a substrate (when small pieces of a substrate are stacked and laminated).

The electronic component device manufactured by the method for manufacturing an electronic component device of the present embodiment includes, for example, a semiconductor device including a plurality of semiconductor chips, a device including a system LSI having a complementary MOS (CMOS Complementary Metal Oxide Semiconductor), Or, a device equipped with a device (MEMS Micro Electro Mechanical Systems) in which mechanical element parts, sensors, actuators, electronic circuits are integrated on a single silicon substrate, glass substrate, organic material substrate, etc. by microfabrication technology, etc. good too. The manufactured electronic component device may be a device including a wiring board.

A method for manufacturing a semiconductor device will be described below as an example of a method for manufacturing an electronic component device.

In a method of manufacturing a semiconductor device, semiconductor chips are generally cut out from a semiconductor wafer (substrate) having circuit components arranged on at least one side thereof, and a semiconductor device including the cut semiconductor chips is assembled. In the manufacturing method of the semiconductor device of the present embodiment, the semiconductor device is manufactured as follows, using the protective sheet 10 and the dicing tape 20 described above at least as auxiliary tools.

Specific embodiments of the method for manufacturing a semiconductor device will be described in detail by citing the first embodiment to the fifth embodiment.

"First Embodiment"
The method of manufacturing a semiconductor device according to the first embodiment includes an assembling step of cutting out a semiconductor chip X from a semiconductor wafer W having at least one surface serving as a circuit surface, and assembling a semiconductor device having such a semiconductor chip X.
Such an assembling process includes a step of superposing a protective sheet 10 for protecting the circuit components on at least one surface of the semiconductor wafer W on which the circuit components are arranged;
A laminate of the semiconductor wafer W and the protective sheet 10 that overlap each other is divided into small pieces so as to leave an interval in the plane direction, so that the small pieces of the protective sheet 10 and the semiconductor chips X formed by the small pieces of the semiconductor wafer W are overlapped. creating a plurality of pieces of laminate;
a step of removing each small piece 10' of the protective sheet overlapping the circuit surface of the semiconductor chip X;
a step of arranging the circuit surface of the semiconductor chip X toward the adherend and bonding the semiconductor chip X and the adherend.

The assembly process of the first embodiment includes, for example, the following processes.
Specifically, the assembly process of the first embodiment includes:
a mounting step of attaching a semiconductor wafer W having circuit components arranged on both sides to a dicing tape 20 and fixing the semiconductor wafer W to the dicing tape 20;
a protection step of protecting the circuit surface by attaching a protective sheet 10 to one circuit surface of the semiconductor wafer W (the overlapping step);
a stealth processing step of preparing to cut the semiconductor wafer W into small pieces (dies) into semiconductor chips (die) by forming a fragile portion inside the semiconductor wafer W to which the protective sheet 10 is attached by a laser beam;
an expanding step (a step of producing small pieces of the above laminate) in which both the semiconductor wafer W and the protective sheet 10 are divided into small pieces by stretching the dicing tape 20;
a removing step of removing a plurality of small pieces 10' of the protective sheet stuck to the semiconductor chip X (the removing step described above);
a pick-up step of separating the semiconductor chip X and the adhesive layer 22 and taking out the semiconductor chip X;
and a bonding step (the bonding step described above) of bonding the taken-out semiconductor chip X to an adherend. When carrying out these steps, the protective sheet 10 and the dicing tape 20 described above are used as manufacturing aids.

The semiconductor wafer W before being diced into semiconductor chips X may be, for example, ground to a desired thickness by back grinding. Specifically, in the back grinding process, the semiconductor wafer W having the back grinding tape B attached to the circuit surface is ground, and the thickness of the semiconductor wafer W is reduced to the thickness of the semiconductor chip X to be manufactured later. You can make it thinner.

The semiconductor wafer W is configured so that a plurality of semiconductor chips X can be obtained. Specifically, the semiconductor wafer W is divided into small pieces at intervals in a plurality of directions along the surface (for example, directions along the surface and perpendicular to each other) to form a plurality of semiconductor chips X. is configured to be able to produce Further, in the semiconductor wafer W, circuit components are arranged on at least one side, and at least one side serves as a circuit side. For example, in the semiconductor wafer W used in the first embodiment, both sides are circuit surfaces. On the other hand, one of the surfaces of the semiconductor wafer W used in other embodiments is a circuit surface. As shown in FIG. 2C, in the first embodiment, electrode portions D as circuit components are arranged on both surface sides of the semiconductor wafer W, respectively. One electrode portion D is electrically connected (electrically connected) to the other electrode portion D. As shown in FIG.

Specifically, the semiconductor chips X, which are produced by dividing the semiconductor wafer W, have electrode portions D arranged on both surfaces and electrically connected to each other. More specifically, as shown in FIG. 2D, electrode portions D are arranged on both surface sides of the semiconductor chip X, and a conductive electrode extending through the semiconductor chip X in the thickness direction is provided inside the semiconductor chip X. Through vias V are arranged. Through such through vias V, the electrode portions D on both sides are electrically connected to each other. Both the electrode portion D and the through via V are made of a conductive material such as a metal material. The through via V is also called a so-called TSV. The electrode portion D and the through via V may be configured by an integrated member, or may be configured by joining separately formed members to each other.
In recent years, in the semiconductor industry, along with the further development of integration technology, thinner semiconductor chips (for example, a thickness of 20 μm or more and 50 μm or less) are desired. The shape of the semiconductor chip when viewed from one side in the thickness direction is, for example, a rectangular shape, and the length of one side is a predetermined length of, for example, 5 mm or more and 20 mm or less.

Hereinafter, "I" is indicated in the drawings showing the state of the manufacturing method of the first embodiment. Similarly, the second to fifth embodiments are indicated by "II" to "V", respectively.

In the mounting process, the semiconductor wafer W is fixed to the dicing tape 20 . As shown in FIG. 3A, on one circuit surface of the semiconductor wafer W, for example, a glass carrier G is attached. A glass carrier G is superimposed on one circuit side of the semiconductor wafer W in order to support a relatively thin semiconductor wafer and facilitate handling of such a semiconductor wafer. For example, after a circuit is formed on one side of the wafer, the glass carrier G is attached to the circuit side, and in the state of being attached to the wafer, the other side of the wafer is used to further form the circuit. used. The thickness of the glass carrier G is, for example, 0.5 mm or more and 5.0 mm or less.

In the mounting step, the semiconductor wafer W is attached to the exposed surface of the adhesive layer 22 while attaching the dicing ring R to the adhesive layer 22 of the dicing tape 20 (see FIG. 3B). Next, the glass carrier G is separated from the semiconductor wafer W (see FIG. 3C).

Before the subsequent protection process, as shown in FIG. 3D, a moistening process may be performed to increase the humidity of the gas in contact with the circuit surface Wa of the semiconductor wafer W. As shown in FIG. When the protective sheet 10 contains a water-soluble polymer compound, the adhesion between the circuit surface Wa of the semiconductor wafer W and the protective sheet 10 becomes better by performing the wetting step. Note that the wetting step is not essential and can be carried out as necessary.

In the protection step, a protection sheet 10 is overlaid on the one circuit surface of the semiconductor wafer W (see FIG. 3E).
In the protection step, for example, the protective sheet 10 may be superimposed on the circuit surface by directly pressing and attaching the protective sheet 10 to the circuit surface. On the other hand, a protective sheet composition containing a solid component that constitutes the protective sheet 10 and a solvent for dissolving the solid component is prepared, and after applying the composition to the circuit surface, the solvent is volatilized to obtain the above-described A protective sheet 10 may be formed in contact with the circuit surface, thereby overlaying the protective sheet 10 on the circuit surface.
By overlapping the protective sheet 10 on the circuit surface of the semiconductor wafer W, it is possible to prevent dust from adhering to the circuit surface of the semiconductor wafer W covered with the protective sheet 10 until the protective sheet 10 is peeled off.

In the stealth processing step, a fragile portion is formed inside the semiconductor wafer W for breaking the semiconductor wafer W into small pieces X into semiconductor chips X. As shown in FIG. A fragile portion is formed inside the semiconductor wafer W by irradiating the semiconductor wafer W with the laser beam L (see FIG. 3F). The laser light L is applied to the semiconductor wafer W from the dicing tape side, for example. The semiconductor wafer W is irradiated with the laser light L so that each semiconductor chip X produced by dividing the semiconductor wafer W in the later expanding process has the electrode portion D as designed in advance. The stealth processing step can be performed using, for example, a commercially available stealth dicing machine.

In the expanding step, as shown in FIG. 3G, the dicing tape 20 and the protective sheet 10 are arranged on both sides of the semiconductor wafer W, and the dicing tape 20 is extended in the plane direction so as to increase the surface area of the dicing tape 20. Stretch. As a result, the laminate of the semiconductor wafer W and the protective sheet 10 is divided into small pieces, and the intervals between the adjacent semiconductor chips X formed by the small pieces are widened along the surface direction. Specifically, after the dicing ring R is attached to the adhesive layer 22 of the dicing tape 20, it is fixed to the holder H of the expanding device. The dicing tape 20 is stretched so as to spread in the plane direction by pushing up the dicing tape 20 from the lower side with a pushing-up member U provided in the expanding device. Thereby, the semiconductor wafer W and the protective sheet 10 are cut into small pieces under specific temperature conditions. The temperature condition is, for example, -20° C. or higher and 0° C. or lower. By lowering the push-up member U, the expanded state is canceled (low temperature expansion step up to this point).
When performing the expansion process at a low temperature, the protective sheet 10 needs to be cut into small pieces. The protective sheet 10 described above is designed so that it can be cut well at this time.
Furthermore, in the expanding step, the dicing tape 20 is extended so as to increase the surface area of the dicing tape 20 under higher temperature conditions (for example, 10° C. or higher and 25° C. or lower). As a result, the semiconductor chips X adjacent to each other are pulled apart in the plane direction of the film surface to further widen the kerf (space) (normal temperature expansion step).
In the expanding step, the dicing tape 20 is stretched in the surface direction so as to expand the area of the dicing tape 20, thereby dividing the protective sheet 10 together with the semiconductor wafer W into small pieces. Specifically, by stretching the dicing tape 20, the semiconductor wafer W can be divided into small pieces X of the semiconductor chips X with the fragile portion inside the semiconductor wafer as a boundary. At this time, as the semiconductor wafer W is divided into small pieces into semiconductor chips X, the protective sheet 10 is also divided into small pieces.

In the removal step, as shown in FIG. 3H, a liquid containing water is brought into contact with a plurality of small pieces 10' of the protective sheet to dissolve at least a portion of each small piece 10' in the liquid, thereby removing the semiconductor chip X. Remove each piece 10' of the overlapping protective sheet.
By removing the small pieces 10' of the protective sheet in this manner, all of the plurality of small pieces 10' of the protective sheet can be removed relatively easily, and the number of foreign substances adhering to the surface of the semiconductor chip can be measured by the liquid. can be reduced relatively easily. Also, the surface of each semiconductor chip X on which the small piece 10' of the protective sheet has overlapped can be washed with a liquid.

The small pieces 10' of the protective sheet may be removed by dissolving all of the small pieces of the protective sheet (the plurality of small pieces 10' of the protective sheet) in the liquid. On the other hand, by dissolving a part of the constituent components of the small pieces 10' of the protective sheet in the above-mentioned liquid and peeling off the small pieces 10' whose adhesion to the semiconductor chip X has weakened from the semiconductor chip X, a plurality of pieces of the protective sheet are formed. The strip 10' may be removed.

The liquid containing water is not particularly limited as long as it is a liquid substance containing water. Such a liquid may contain water in an amount of 30% by mass or more, 50% by mass or more, 70% by mass or more, 80% by mass or more, or 90% by mass or more.
In addition to water, the liquid may contain a component that dissolves in water. Such components include, for example, water-soluble organic solvents. Examples of such water-soluble organic solvents include monohydric alcohols having 4 or less carbon atoms such as propanol such as methanol, ethanol and isopropyl alcohol, or butanol such as t-butanol.

In the removing step in the first embodiment, the protective sheet pieces 10' may be immersed in the agitated liquid to bring the liquid into contact with the protective sheet pieces 10'. Alternatively, a liquid jetted from a nozzle or the like may be brought into contact with the small pieces 10' of the protective sheet. The temperature of the liquid is not particularly limited, and may be set to, for example, 10°C or higher and 90°C or lower. The temperature of the liquid is preferably 40° C. or higher in that the plurality of small pieces 10 ′ of the protective sheet can be removed in a shorter time.

For example, in the removing step, the liquid is poured toward the plurality of semiconductor chips X attached to the adhesive layer 22 of the dicing tape 20 while rotating a disk-shaped stage that supports the dicing tape 20 from below in the circumferential direction. Inject. As a result, the plurality of small pieces 10' of the protective sheet overlapping the semiconductor wafer W can be removed. The rotation speed of the stage may be, for example, 500 rpm or more and 4000 rpm or less, the liquid injection amount may be, for example, 0.05 L/min or more and 5.0 L/min or less, and the injection time may be, for example, 5 seconds or more. It may be 300 seconds or less.

According to the method for manufacturing a semiconductor device described above, the protective sheet 10 is superimposed on the surface (circuit surface) of the semiconductor wafer W on which the circuit components are arranged. It is possible to prevent foreign matter from adhering to the Specifically, since the semiconductor chip X is produced by dividing the semiconductor wafer W into small pieces while the semiconductor wafer W and the protective sheet 10 are overlapped, foreign matter such as fragments that may be generated when the semiconductor wafer W is broken is removed from the semiconductor. Adhesion to the circuit surface of the chip X can be prevented. Even if foreign matter adheres to the circuit surface of the semiconductor chip X before the protective sheet 10 is laid thereon, the foreign matter can also be removed when removing the small pieces 10' of the protective sheet overlapping the circuit surface of the semiconductor chip X. . Therefore, it is possible to prevent foreign matter from adhering to the circuit surface of the semiconductor chip X to be manufactured.

The components and physical properties of the protective sheet 10 will be described later in detail.

In the pick-up step, the semiconductor chip X is separated from the adhesive layer 22 of the dicing tape 20, as shown in FIG. 3I. Specifically, the pin member P is raised to push up the semiconductor chip X to be picked up through the dicing tape 20 . The pushed-up semiconductor chip X is held by a suction jig J.

When performing the pick-up process in this manner, the semiconductor chip X needs to be easily peeled off from the adhesive layer 22 of the dicing tape 20 . Moreover, it is necessary to divide the semiconductor wafer W and the protective sheet 10 into small pieces satisfactorily by stretching the dicing tape 20 when performing the expanding process described above. The dicing tape 20 described above is designed to exhibit such performance well.
For example, the dicing tape 20 is configured such that the adhesive layer 22 is cured and the adhesive strength of the adhesive layer 22 is reduced by being irradiated with active energy rays (for example, ultraviolet rays). By curing the adhesive layer 22 after irradiation, the adhesive force of the adhesive layer 22 can be lowered, so that the semiconductor chip X can be relatively easily peeled off from the adhesive layer 22 after irradiation. A dicing tape 20 having such a configuration is commercially available.

As described above, the electrode portions D electrically connected to each other are arranged on both surface sides of the semiconductor chip X taken out by the pick-up process. Electrode portions D and non-electrode portions other than the electrode portions D are formed on the surface layer portions of one surface and the other surface of the semiconductor chip X. As shown in FIG. The non-electrode portion is made of, for example, an insulating material (silicon oxide). As shown in FIG. 2D, on one side and the other side of the semiconductor chip X, the surfaces of the electrode portion D and the non-electrode portion are flush with each other. The electrode portion D is formed to have a thickness of 5 nm or more and 10 μm or less from the outermost surface of the semiconductor chip X, for example. The above-described through vias V arranged so as to penetrate the semiconductor chip X in the thickness direction are covered with the above-described insulating material except for the portions in contact with the electrode portions D. As shown in FIG. In other words, a part of the surface of the through via V extending in the thickness direction of the semiconductor chip X is covered with an insulating material, and the other part is in contact with the electrode portion D. As shown in FIG.

The bonding process is performed after the removal process and the pick-up process. In the bonding step, for example, as shown in FIG. 3J, the surface (circuit surface) of the semiconductor chip X from which the small pieces 10' of the protective sheet have been removed faces the adherend, and the semiconductor chip X is bonded to the adherend. Thus, the method of bonding the adherend and the semiconductor chip X with the circuit surface of the semiconductor chip X facing the adherend is generally called flip bonding. Even with such a joining method, the number of foreign substances adhering to the circuit surface of the semiconductor chip X can be reduced by the above-described removal step, so that foreign substances do not enter between the circuit surface of the semiconductor chip X and the adherend. It is possible to suppress the adverse effects of foreign substances.

In the bonding step, for example, the semiconductor chip X is bonded to the adherend Z (wiring substrate, etc.). At this time, the adherend Z and the semiconductor chip X are joined so that the electrode portion D on the adherend Z side and the electrode portion D on the semiconductor chip X side are electrically connected.
Further, for example, in the bonding step, at least two semiconductor chips X are stacked, and the electrode portion D on one semiconductor chip X side, which is the adherend, and the electrode portion D on the other semiconductor chip X side are directly connected to each other. . In other words, the semiconductor chips X are stacked by directly connecting the electrode portions D to each other so that the electrode portions D on one semiconductor chip X side and the electrode portions D on the other semiconductor chip X side are electrically connected. As described above, on the circuit surface of the semiconductor chip, etc., the electrode portion and the non-electrode portion are arranged so as to be flush with each other. It is preferable that the amount of foreign matter adhering to the surface is as small as possible. In particular, it is preferable that foreign matter does not adhere to the surface of the electrode portion. The manufacturing method of the present embodiment can prevent foreign matter from adhering to the surface of the semiconductor chip X, and is therefore particularly effective when bonding a plurality of semiconductor chips X to each other as described above.
When stacking a plurality of semiconductor chips X as described above in the bonding process, in order to stack a plurality of semiconductor chips X in which adhesion of foreign matter to the circuit surface is suppressed, one stacked semiconductor chip X and the other semiconductor chip X are stacked. The number of foreign substances that enter between Therefore, it is possible to more reliably connect the electrode portions D between the adjacent semiconductor chips X to each other. Therefore, the circuits of the plurality of semiconductor chips X are electrically connected to each other with high reliability.

When the electrode portions D are directly connected to each other, for example, an atomic diffusion bonding process can be employed. The atomic diffusion bonding process can be performed using, for example, a commercially available atomic diffusion bonding apparatus.

In the first embodiment, in order to protect the semiconductor chip X that has undergone the bonding process, a resin sealing process of sealing (covering) the semiconductor chip X with a thermosetting resin or the like may be performed.

<Details of Protective Sheet in First Embodiment>
Although the thickness of the protective sheet 10 is not particularly limited, it is, for example, 1 μm or more and 100 μm or less. Such thickness may be 3 μm or more, and may be 5 μm or more. Also, such thickness may be 40 μm or less. When the protective sheet 10 is a laminate, the above thickness is the total thickness of the laminate.

The protective sheet 10 has a configuration in which it is divided into small pieces by being stretched in the plane direction in the expanding step so as to increase the area. Each of the protection sheets 10 that are cut into small pieces has the same area as the circuit surface of the semiconductor chip X. As shown in FIG.

The protective sheet 10 contains at least a water-soluble polymer compound so that the small piece 10' of the protective sheet overlapping the semiconductor chip X is removed by a liquid containing water in the removal step described above.

Examples of water-soluble polymer compounds include polyvinyl alcohol (PVA) and polyvinylpyrrolidone (PVP). One of these may be employed as the water-soluble polymer compound, or two or more may be employed in combination.

The degree of saponification (mol%) of the polyvinyl alcohol is preferably 50 or more, more preferably 60 or more. Moreover, the degree of saponification is preferably 98 or less.
When the degree of saponification of polyvinyl alcohol is 50 or more, the polyvinyl alcohol becomes easier to dissolve in a liquid containing water in the removal step.

The degree of saponification is measured by proton magnetic resonance spectroscopy ( ¹ H MNR) performed under the following analytical conditions.
When the protective sheet 10 contains a component other than PVA, the measurement is performed after the PVA is separated and extracted by methanol extraction or the like in order to avoid overlapping of peaks in the measurement chart.
Analyzer: FT-NMR: "AVANCE III-400" manufactured by Bruker Biospin
Observation frequency: 400MHz (1H)
Measurement solvent: heavy water or heavy DMSO
Measurement temperature: 80°C
Chemical shift standard: external standard TSP-d4 (0.00 ppm) (when measuring heavy water)
: Measurement solvent (2.50 ppm) (during heavy DMSO measurement)
A vinyl alcohol unit (VOH) methylene group-derived peak (heavy water; 2.0 to 1.1 ppm, heavy DMSO; 1.9 to 1.0 ppm) and a vinyl acetate unit (VAc) acetyl group-derived peak (heavy water; 2 .1 ppm, heavy DMSO; around 2.0 ppm), the degree of saponification is calculated by the following formula. In the formula below, VOH (--CH ₂ --) is the intensity of the peak derived from the methylene group of the vinyl alcohol unit (VOH), and VAc (CH ₃ CO--) is the acetyl of the vinyl acetate unit (VAc). is the intensity of the group-derived peak.

The average degree of polymerization of the polyvinyl alcohol is preferably 100 or more, more preferably 200 or more. The average degree of polymerization is preferably 1000 or less, more preferably 800 or less.
When the average degree of polymerization of polyvinyl alcohol is 200 or more, it becomes easier to form the protective sheet 10 described above. On the other hand, when the average degree of polymerization of polyvinyl alcohol is 1000 or less, the polyvinyl alcohol becomes more likely to dissolve in a liquid containing water in the removal step.

The above average degree of polymerization is measured by gel permeation chromatography (GPC). The measurement conditions are as follows.
Analyzer: Agilent Technologies, "1260Infinity"
Column: manufactured by Tosoh Corporation, TSKgelG6000PWXL + TSKgel G3000PWXL (series connection)
Column temperature: 40°C
Eluent: 0.2 M aqueous sodium nitrate solution Flow rate: 0.8 mL/min
Injection volume: 100 μL
Detector: differential refractometer (RI)
Standard sample: polyethylene glycol (PEG), polyvinyl alcohol (PVA)
By GPC measurement using a PEG standard sample, the weight average molecular weight Mw of the sample to be measured (PVA) and the PVA standard sample with a known average degree of polymerization are calculated. A calibration curve is prepared from the average degree of polymerization of the PVA standard sample and the calculated weight average molecular weight Mw of the PVA standard sample. Using this calibration curve, the average degree of polymerization of the sample (PVA) to be measured is obtained from the weight average molecular weight Mw of the sample (PVA) to be measured.

The elongation at break of the protective sheet 10 used in the manufacturing method of the first embodiment and the like is preferably 30.0% or less at -15°C. Such elongation at break may be 20.0% or less, or may be 10.0% or less. In addition, 0.1% or more may be sufficient as said breaking elongation.
When the elongation at break is 0.1% or more and 30.0% or less, the protective sheet 10 can be broken into small pieces more reliably in the expanding step.

The elongation at break can be increased, for example, by increasing the molecular weight of the water-soluble polymer compound contained in the protective sheet 10 . On the other hand, the elongation at break can be reduced by reducing the molecular weight of the water-soluble polymer compound contained in the protective sheet 10, for example.

The above elongation at break is measured under the following measurement conditions.
・Measuring device: Tensile tester ("Autograph AG-IS" manufactured by Shimadzu Corporation, etc. can be used)
・Measurement sample: thickness 30 μm
・Test piece: 10 mm wide, 50 mm long strip, initial distance between chucks 20 mm
・Tensile speed: 10mm/sec
・Measurement temperature: -15°C (Start measurement after holding at -15°C for 5 minutes)
・The rate of elongation at break (the ratio of the length to the original length) is defined as the elongation at break (elongation at break).

The breaking strength of the protective sheet 10 may be 500 MPa or less, or 200 MPa or less at -15°C. The above breaking strength may be 1.0 MPa or more. Such strength at break is the tensile force at break in the measurement of elongation at break described above.
When the breaking strength is 1.0 MPa or more and 500 MPa or less, the protection sheet 10 can be more reliably cut into small pieces in the expanding step.

The breaking strength can be increased by, for example, increasing the molecular weight of the water-soluble polymer compound contained in the protective sheet 10 . On the other hand, for example, by reducing the molecular weight of the water-soluble polymer compound contained in the protective sheet 10, the breaking strength can be reduced.

The adhesion of the protective sheet 10 to the semiconductor wafer W is indicated by the peeling force when the protective sheet 10 is peeled off from the silicon bare wafer. The peel force of the protective sheet 10 at 25° C. may be 10.0 [N/10 mm] or less, or 8.0 N/10 mm] or less. In addition, the above peeling force may be 0.01 [N/10 mm] or more.
When the protective sheet 10 is divided into small pieces in the expanding step, the peeling force is 0.01 [N/10 mm] or more and 10.0 [N/10 mm] or less. Unintentional detachment from the semiconductor chip X can be further suppressed.

The peeling force can be increased by increasing the molecular weight of the water-soluble polymer compound contained in the protective sheet 10, for example. On the other hand, for example, by reducing the molecular weight of the water-soluble polymer compound contained in the protective sheet 10, the peeling force can be reduced.

The above peel strength is measured under the following measurement conditions.
In order to measure the peel strength of one surface (the surface to be attached to the semiconductor wafer W) of the protective sheet 10, a measurement sample is prepared as follows. First, at 25° C., a backing tape is attached to the surface of the protective sheet 10 opposite to the one surface using a hand roller. Next, the measurement sample is processed so as to have a width of 100 mm, and a bare silicon wafer is attached to the one surface of the protective sheet 10 . The bonding is performed under conditions of 90° C. and 10 mm/sec. Then, in an atmosphere of 23° C., the protective sheet 10 is peeled from the bare wafer together with the backing tape at a peeling angle of 180° and a peeling speed of 300 mm/min, and the peeling force is measured. Finally, the measured values were converted so as to be expressed in units of [N/10 mm]. As a measuring device, for example, "Autograph (manufactured by SHIMADZU)" can be used.

The tensile elastic modulus (tensile storage elastic modulus E′) of the protective sheet 10 at −15° C. is preferably 0.01 GPa or more and 10.0 GPa or less. Such tensile modulus may be 0.05 GPa or higher, or 0.10 GPa or higher. Moreover, such a tensile elastic modulus may be 5.0 GPa or less, or may be 3.0 GPa or less.
When the tensile elastic modulus at −15° C. is 0.01 GPa or more and 10.0 GPa or less, the protective sheet 10 can be broken into small pieces more reliably in the expanding step.

The elastic modulus (tensile elastic modulus) of the protective sheet 10 can be increased, for example, by increasing the molecular weight of the water-soluble polymer compound contained in the protective sheet 10 . On the other hand, for example, by reducing the molecular weight of the water-soluble polymer compound contained in the protective sheet 10, the tensile modulus can be lowered.

The above tensile modulus is measured under the following measurement conditions.
・Measuring device: Solid viscoelasticity measuring device (“RSA III” manufactured by TA Instruments, etc. can be used)
・Measurement sample: thickness 50 μm
・Test piece: strip shape with a width of 10 mm and a length of 40 mm, initial distance between chucks of 20 mm
・Measurement mode: Tensile mode ・Frequency 1 Hz, heating rate 10°C/min, strain amount 0.1%
・Measurement temperature range: -40°C to 80°C (heating starts after holding at -40°C for 5 minutes)
・ Read the tensile elastic modulus (tensile storage elastic modulus) [MPa] at -15 ° C. and 25 ° C.

The surface free energy of the protective sheet 10 may be 70 [mJ/m ² ] or less, or 65 [mJ/m ² ] or less at 25°C. In addition, the above surface free energy may be 30 [mJ/m ² ] or more.
When the surface free energy is within the above range, the wettability of the protective sheet 10 with water is moderately improved, so that the protective sheet 10 can be removed more easily in the removing step.

The surface free energy can be increased, for example, by increasing the ratio of hydrophilic groups (--OH groups, etc.) in the molecule of the water-soluble polymer compound. On the other hand, the surface free energy can be reduced by, for example, increasing the proportion of hydrophobic groups (such as alkyl groups) in the molecule of the water-soluble polymer compound.

The above surface free energy is calculated from the results of contact angle measurement. Specifically, the contact angle of each droplet of water (H ₂ O) and methylene iodide (CH ₂ I ₂ ) contacting the surface of the protective sheet 10 under the conditions of 20° C. and 65% relative humidity is Measure using a goniometer.
Next, the surface free energy is calculated as follows from the measured water contact angle θw and methylene iodide contact angle θi. Specifically, γs ^d (dispersive component of surface free energy) and ^γsh (polar component of surface free energy) are calculated according to the method of Owens et al. demand.
A value γs (=γs ^d +γs ^h ) obtained by adding γs ^d and γs ^h is defined as the surface free energy of the protective sheet 10 .
The respective values of γs ^d (dispersive component) and γs ^h (polar component) are obtained as solutions of the following two-dimensional simultaneous equations (1) and (2). In equations (1) and (2), γw is the surface free energy of water, ^γwd is the dispersive component of the surface free energy of water, ^γwh is the polar component of the surface free energy of water, and γi is the surface free energy of methyl iodide. The energy, γi ^d, is the dispersive component of the surface free energy of methyl iodide, and ^γih is the polar component of the surface free energy of methyl iodide, which are known values as follows.
γw=72.8 [mJ/m ² ]
^γwd = 21.8 [mJ/m ² ]
γw ^h =51.0 [mJ/m ² ]
γi = 50.8 [mJ/m ² ]
γi ^d =48.5 [mJ/m ² ]
γi ^h =2.3 [mJ/m ² ]

Specifically, the surface free energy of one surface of the protective sheet 10 (the surface to be attached to the semiconductor wafer W) is measured. The contact angles of water and methylene iodide are measured, respectively, and the average value of 5 measurements is adopted. In addition, 1 mL of liquid is dropped on the surface and the contact angle is measured within 5 seconds. A dispersion component and a polar component are calculated from each measurement value of the contact angle, and the surface free energy is obtained from the sum thereof.

Next, second to fifth embodiments will be described in detail. Note that the same description as in the first embodiment will not be repeated for the second to fifth embodiments. In the second to fifth embodiments, the same operations as in the first embodiment can be performed unless otherwise specified.

"Second Embodiment"
The semiconductor device manufacturing method of the second embodiment has the steps described above, similarly to the semiconductor device manufacturing method of the first embodiment.
However, the manufacturing method of the semiconductor device of the second embodiment is different in that the circuit components are arranged on one side of the semiconductor wafer W, in terms of the structure and components of the protective sheet 10, and in the removal step of the protective sheet 10. This method is different from the semiconductor device manufacturing method of the first embodiment in terms of the removing method and the like.

Specifically, in the semiconductor device manufacturing method of the second embodiment, the protective sheet 10 contains a curable composition, and the protective sheet 10 overlapping the circuit surface of the semiconductor wafer W is cured by a curing treatment, and then the semiconductor wafer is cured. The laminate of W and protective sheet 10 is cut into pieces.

The protective sheet 10 used in the second embodiment contains a curable composition that is cured by curing. For example, the protective sheet 10 is made of a curable composition.
The curable composition contains a curable compound that initiates a curing reaction upon curing. The curable compound initiates a curing reaction by, for example, irradiation treatment with active energy rays such as ultraviolet rays, or curing treatment such as heat treatment.
In the second embodiment, since the protective sheet 10 is cured by the curing process, the protective sheet 10 can be divided into small pieces more easily in the expanding process. In addition, the adhesive force of the protective sheet 10 can be reduced by curing the protective sheet 10 by the curing treatment. Therefore, each small piece 10' of the protective sheet can be peeled off from each semiconductor chip X relatively easily after the curing process.

In the second embodiment, as shown in FIG. 4A, the semiconductor wafer W and the protective sheet 10 are stacked in this order on the dicing tape 20 in the same manner as in the first embodiment. A release liner 15 is preferably attached to the protective sheet 10 . Thereafter, as shown in FIG. 4B, the stealth processing process is performed on the semiconductor wafer W in the same manner as in the first embodiment.

For example, the protective sheet 10 used in the second embodiment is cured by irradiation with ultraviolet rays M or the like as shown in FIG. 4C. Specifically, in a state in which the adhesive layer 22 is attached to one surface of the semiconductor wafer W and the protective sheet 10 is attached to the other surface of the semiconductor wafer W, at least the protective sheet 10 is irradiated with ultraviolet light or the like. . The protective sheet 10 is cured by irradiation with ultraviolet rays or the like. After that, as shown in FIG. 4D, the release liner 15 is peeled off from the protective sheet 10 . Furthermore, as shown in FIG. 4E, the semiconductor wafer W and the protective sheet 10 are divided into small pieces in the same manner as in the first embodiment.

(Removing step in the second embodiment)
In the removing step in the second embodiment, a peeling adhesive tape T is used to peel off the small piece 10' of the protective sheet from the semiconductor chip X. As shown in FIG. As the peeling adhesive tape T, for example, a commercially available adhesive tape can be used.

In the removing step of the second embodiment, as shown in FIG. 4F, the adhesive peeling tape T attached to the plurality of small pieces 10' of the protective sheet is peeled off, thereby removing the plurality of small pieces of the protective sheet together with the adhesive peeling tape T. 10' is removed.
By using the peeling adhesive tape T in this manner, the plurality of small pieces 10' of the protective sheet can be removed relatively easily. In addition, when the plurality of small pieces 10' of the protective sheet are peeled off, it is also possible to remove foreign matter adhering to the circuit surface of the semiconductor.

The adhesion of the protective sheet 10 used in the second embodiment to the semiconductor wafer W is indicated, for example, by the peeling force when peeling the protective sheet 10 from the silicon bare wafer. The method for measuring such peel force is as described above. Note that the peeling force between the protective sheet 10 and the semiconductor chip X is smaller than the peeling force between the protective sheet 10 and the adhesive peeling tape T after the curing treatment.

<Details of Protective Sheet in Second Embodiment>
The protective sheet 10 used in the second embodiment contains, for example, an acrylic polymer, an isocyanate compound, and a polymerization initiator.

The above acrylic polymer has at least an alkyl (meth)acrylate structural unit, a hydroxyl group-containing (meth)acrylate structural unit, and a polymerizable group-containing (meth)acrylate structural unit in the molecule. A structural unit is a unit which comprises the main chain of an acrylic polymer. Each side chain in the above acrylic polymer is contained in each structural unit constituting the main chain.

The structural unit of the above alkyl (meth)acrylate is derived from an alkyl (meth)acrylate monomer. In other words, the molecular structure after the polymerization reaction of the alkyl(meth)acrylate monomer is the structural unit of the alkyl(meth)acrylate. The notation "alkyl" represents the number of carbon atoms in the hydrocarbon moiety ester-bonded to (meth)acrylic acid.
The hydrocarbon portion of the alkyl moiety in the structural unit of the alkyl (meth)acrylate may be saturated hydrocarbon or unsaturated hydrocarbon. The number of carbon atoms in the alkyl portion may be 6 or more and 10 or less.

Acrylic polymers have structural units of hydroxyl-containing (meth)acrylates, and the hydroxyl groups of such structural units readily react with isocyanate groups.
By coexisting an acrylic polymer having a hydroxyl group-containing (meth)acrylate structural unit and an isocyanate compound in the protective sheet 10, the protective sheet 10 can be appropriately cured. Therefore, the acrylic polymer can be sufficiently gelled. Therefore, the protective sheet 10 can exhibit adhesive performance while maintaining its shape.

The structural unit of the hydroxyl group-containing (meth)acrylate is preferably a structural unit of the hydroxyl group-containing C2-C14 alkyl (meth)acrylate. The notation "C2-C14 alkyl" represents the number of carbon atoms (2 or more and 14 or less) of the hydrocarbon moiety ester-bonded to (meth)acrylic acid. In other words, the hydroxyl group-containing C2-C14 alkyl (meth)acrylate monomer is a monomer in which (meth)acrylic acid and an alcohol having 2 to 14 carbon atoms (usually a dihydric alcohol) are ester-bonded.
The hydrocarbon portion of the C2-C14 alkyl is typically a saturated hydrocarbon. For example, a C2-C14 alkyl hydrocarbon moiety is a straight chain saturated hydrocarbon or a branched chain saturated hydrocarbon. Preferably, the C2-C14 alkyl hydrocarbon portion does not contain polar groups containing oxygen (O), nitrogen (N), and the like.

Examples of structural units of hydroxyl group-containing C2-C14 alkyl (meth)acrylates include hydroxyethyl (meth)acrylate, hydroxypropyl (meth)acrylate, hydroxy n-butyl (meth)acrylate, and hydroxy iso-butyl (meth)acrylate. Each structural unit of hydroxybutyl (meth)acrylate such as acrylate can be mentioned. In addition, in the structural unit of hydroxybutyl (meth)acrylate, the hydroxyl group (--OH group) may be bonded to the terminal carbon (C) of the hydrocarbon moiety, and the carbon (C) other than the terminal of the hydrocarbon moiety. may be connected to

The above acrylic polymer contains a structural unit of a polymerizable group-containing (meth)acrylate having a polymerizable unsaturated double bond in the side chain.
By including the polymerizable group-containing (meth)acrylate structural unit in the acrylic polymer, the protective sheet 10 can be cured by irradiation with active energy rays (ultraviolet rays, etc.) before the pick-up process. Specifically, by irradiation with active energy rays such as ultraviolet rays, radicals are generated from the photopolymerization initiator, and the action of these radicals can cause a cross-linking reaction between the acrylic polymers. As a result, the adhesive strength of the protective sheet 10 before irradiation can be reduced by irradiation. Then, the small piece 10' of the protective sheet can be peeled off from the semiconductor chip X satisfactorily.
Ultraviolet rays, radiation, and electron beams are employed as active energy rays.

The structural unit of the polymerizable group-containing (meth)acrylate specifically has a molecular structure in which the isocyanate group of the isocyanate group-containing (meth)acrylate monomer is urethane-bonded to the hydroxyl group in the structural unit of the hydroxyl group-containing (meth)acrylate described above. may have

A polymerizable group-containing (meth)acrylate structural unit having a polymerizable group can be prepared after polymerization of an acrylic polymer. For example, after copolymerization of an alkyl (meth)acrylate monomer and a hydroxyl group-containing (meth)acrylate monomer, the hydroxyl group in a part of the structural units of the hydroxyl group-containing (meth)acrylate and the isocyanate group of the isocyanate group-containing polymerizable monomer can be subjected to a urethanization reaction to obtain the structural unit of the polymerizable group-containing (meth)acrylate.

The above isocyanate group-containing (meth)acrylate monomer preferably has one isocyanate group and one (meth)acryloyl group in the molecule. Such monomers include, for example, 2-isocyanatoethyl (meth)acrylate.

The protective sheet 10 may further contain an isocyanate compound having multiple isocyanate groups in the molecule. As a result, the cross-linking reaction between the acrylic polymers in the protective sheet 10 can proceed. Specifically, one isocyanate group of the isocyanate compound reacts with the hydroxyl group of the acrylic polymer, and the other isocyanate group reacts with the hydroxyl group of another acrylic polymer, thereby allowing the cross-linking reaction via the isocyanate compound to proceed.

Examples of isocyanate compounds include diisocyanates such as aliphatic diisocyanates, alicyclic diisocyanates, and araliphatic diisocyanates. Examples of isocyanate compounds include polymerized polyisocyanates such as diisocyanate dimers and trimers, and polymethylene polyphenylene polyisocyanates.

In addition, the isocyanate compound includes, for example, a polyisocyanate obtained by reacting an excess amount of the isocyanate compound described above with an active hydrogen-containing compound. Active hydrogen-containing compounds include active hydrogen-containing low molecular weight compounds and active hydrogen-containing high molecular weight compounds.
As the isocyanate compound, allophanatized polyisocyanate, biuretized polyisocyanate, and the like can also be used.
Said isocyanate compound can be used individually by 1 type or in combination of 2 or more types.

The above isocyanate compound is preferably a reaction product of an aromatic diisocyanate and an active hydrogen-containing low molecular weight compound. Since the reactant of the aromatic diisocyanate has a relatively slow reaction rate of the isocyanate group, excessive curing of the protective sheet 10 containing such a reactant is suppressed. As the above isocyanate compound, those having three or more isocyanate groups in the molecule are preferable.

The polymerization initiator contained in the protective sheet 10 is a compound capable of initiating a polymerization reaction by applied heat or light energy. By including the polymerization initiator in the protective sheet 10, the cross-linking reaction between the acrylic polymers can proceed when the protective sheet 10 is subjected to heat energy or light energy. Specifically, the protective sheet 10 can be cured by initiating a polymerization reaction between the polymerizable groups in the acrylic polymer having polymerizable group-containing (meth)acrylate structural units. As a result, the adhesive strength of the protective sheet 10 is reduced, and the small piece 10' of the cured protective sheet can be easily peeled off from the semiconductor chip X in the removal step.
As the polymerization initiator, for example, a photopolymerization initiator or a thermal polymerization initiator is employed. A general commercial product can be used as the polymerization initiator.

The protective sheet 10 in the second embodiment can be produced as follows. Specifically, an acrylic polymer is synthesized, and the solvent is volatilized from an adhesive composition containing an acrylic polymer, an isocyanate compound, a polymerization initiator, and a solvent to produce the protective sheet 10 .

In synthesizing an acrylic polymer, for example, an acrylic polymer intermediate is synthesized by radically polymerizing an alkyl (meth)acrylate monomer and a hydroxyl group-containing (meth)acrylate monomer.
Radical polymerization can be performed by a general method. For example, an acrylic polymer intermediate can be synthesized by dissolving each of the above monomers in a solvent, stirring with heating, and adding a polymerization initiator. Polymerization may be carried out in the presence of a chain transfer agent to control the molecular weight of the acrylic polymer.
Next, some hydroxyl groups of the structural units of the hydroxyl group-containing (meth)acrylate contained in the acrylic polymer intermediate and the isocyanate groups of the isocyanate group-containing polymerizable monomer are combined by a urethanization reaction. As a result, part of the structural units of the hydroxyl group-containing (meth)acrylate becomes the structural unit of the polymerizable group-containing (meth)acrylate.
A urethanization reaction can be performed by a general method. For example, the acrylic polymer intermediate and the isocyanate group-containing polymerizable monomer are stirred while heating in the presence of a solvent and a urethanization catalyst. As a result, the isocyanate groups of the isocyanate group-containing polymerizable monomer can be urethane-bonded to some of the hydroxyl groups of the acrylic polymer intermediate.

Subsequently, an acrylic polymer, an isocyanate compound, and a polymerization initiator are dissolved in a solvent to prepare an adhesive composition. By varying the amount of solvent, the viscosity of the composition can be adjusted. The adhesive composition is then applied to release liner 15 (described below). As the coating method, a general coating method such as roll coating, screen coating, gravure coating, or the like is employed. By subjecting the applied composition to solvent removal treatment, solidification treatment, or the like, the applied pressure-sensitive adhesive composition is solidified, and the protective sheet 10 is produced.

The protective sheet 10 in the second embodiment may have a release liner 15 overlaid on at least one surface before or during use, as shown in FIG. 2A, for example. The release liner 15 is configured so that it can be easily peeled off from the protective sheet 10 .
More specifically, at least one of the surface of the protective sheet 10 that overlaps the circuit surface of the semiconductor wafer W and the surface opposite to the surface is provided with a release liner 15 before or during use. may be attached. The release liner 15 is used to protect the protective sheet 10, and is peeled off and removed after the protective sheet 10 is attached to the semiconductor wafer W. As shown in FIG.

The release liner 15 described above can be used as a support material for supporting the protective sheet 10 . The release liner 15 is preferably used when the semiconductor wafer W is overlaid with the protective sheet 10 . Specifically, the protective sheet 10 can be attached to the semiconductor wafer W by stacking the protective sheet 10 on the semiconductor wafer W while the release liner 15 and the protective sheet 10 are laminated. The release liner 15 may then be peeled off.
A release liner 15 may be attached to the protective sheet 10 so that the protective sheet 10 is arranged between two release liners 15 .

The thickness of the release liner 15 may be, for example, 25 μm or more and 75 μm or less. The release liner 15 is preferably a resin film such as a polyethylene terephthalate resin film. The release liner 15 is preferably light transmissive (ultraviolet transmissive). As the release liner 15, for example, a plastic film, paper, or the like surface-treated with a release agent such as a silicone-based, long-chain alkyl-based, fluorine-based, or molybdenum sulfide-based release agent can be used. As the release liner 15, commercially available products such as the product name "DIAFOIL MRA50" (a biaxially oriented polyester film manufactured by Mitsubishi Chemical Corporation) can be used.

The protective sheet 10 in the second embodiment may contain, for example, a curable compound that is cured by active energy rays as described above, or a curable compound that can initiate a curing reaction by heat treatment.
Examples of curable compounds capable of initiating a curing reaction by heat treatment include thermosetting resins.
Moreover, as a curable compound that is cured by an active energy ray, an ultraviolet curable polyurethane resin and the like can be mentioned.
In addition, a curable silicone resin composition is also mentioned as a curable compound.

Examples of thermosetting resins include epoxy resins, phenol resins, amino resins, unsaturated polyester resins, thermosetting polyimide resins, and the like. As the thermosetting resin, one type or two or more types are employed.

Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolak type, ortho Epoxy resins of cresol novolac type, trishydroxyphenylmethane type, tetraphenylolethane type, hydantoin type, trisglycidyl isocyanurate type, or glycidylamine type are included.

Phenolic resins can act as curing agents for epoxy resins. Examples of phenolic resins include novolac-type phenolic resins, resol-type phenolic resins, and polyoxystyrenes such as polyparaoxystyrene.
Examples of the novolak-type phenol resin include phenol novolak resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, nonylphenol novolak resin, and the like.
As the phenol resin, only one kind or two or more kinds are adopted.

Examples of UV-curable polyurethane resins include compounds having, in the molecule, a main chain composed of a plurality of urethane bonds and side chains containing (meth)acrylic groups. Commercially available ultraviolet curable polyurethane resins include, for example, "8UH Series" manufactured by Taisei Fine Chemicals.

The curable silicone resin composition includes, for example, a composition that contains a silicone resin having a silanol group in the molecule and can be cured by a condensation reaction of the silanol group, a composition that can be cured by a hydrosilylation reaction between an alkenyl group and a SiH group, and a molecule. A composition that contains a silicone resin having a polymerizable unsaturated group therein and can be cured by a radical polymerization reaction can be mentioned.

In the second embodiment, the elongation at break and the strength at break of the protective sheet 10 before and after the curing treatment are respectively the same as the elongation at break and the strength at break of the protective sheet 10 in the first embodiment. good.

In the second embodiment, the adhesion of the protective sheet 10 to the semiconductor wafer W before and after the curing process can be measured by the peeling force described in the description of the first embodiment. Such a peel force may be the same as the peel force of the protective sheet 10 used in the first embodiment.

The protective sheet 10 used in the second embodiment preferably has a tensile elastic modulus (tensile storage elastic modulus E′) at 25° C. before curing treatment of 1.0 MPa or more and 1.0 GPa or less. Further, the tensile elastic modulus (tensile storage elastic modulus E′) at −15° C. before curing treatment is preferably 2.0 MPa or more and 1.0 GPa or less.
The protective sheet 10 used in the second embodiment preferably has a tensile elastic modulus (tensile storage elastic modulus E′) at 25° C. after curing treatment of 5.0 MPa or more and 10.0 GPa or less. Further, it is preferable that the tensile elastic modulus (tensile storage elastic modulus E′) at −15° C. after curing treatment is 10.0 MPa or more and 10.0 GPa or less.

In the second embodiment, steps not specifically mentioned can be performed in the same manner as the steps in the first, third, fourth, or fifth embodiment.

Next, the third embodiment will be described in detail. In addition, about 3rd Embodiment, description similar to 1st Embodiment and 2nd Embodiment is not repeated. In the third embodiment, operations similar to those in the first or second embodiment can be performed unless otherwise specified.

"Third Embodiment"
The manufacturing method of the semiconductor device of the third embodiment mainly includes, in the mounting step, the semiconductor wafer W overlapping the glass carrier G, instead of sticking the semiconductor wafer W over the glass carrier G to the adhesive layer 22 of the dicing tape 20, the semiconductor wafer W and the protective sheet are attached. 10 are laminated on the adhesive layer 22, and the like, which is different from the second embodiment.

Specifically, in the method of manufacturing a semiconductor device according to the third embodiment, as shown in FIG. 5A, a semiconductor wafer W attached to a back grind tape B is prepared.

In the protection step, a protection sheet 10 is attached to the semiconductor wafer W, as shown in FIG. 5B. At this time, the protective sheet 10 is attached to one surface of the semiconductor wafer W, and the back glint tape is attached to the other surface. The circuit components are arranged on one side of the semiconductor wafer W. As shown in FIG.

Next, in the mounting step, as shown in FIG. 5C, the back glint tape is peeled off from the semiconductor wafer W while the semiconductor wafer W and the protective sheet 10 are overlapped. As a result, the semiconductor wafer W and the protective sheet 10 overlap each other, and the other surface (the non-circuit surface, not the circuit surface) of the semiconductor wafer W is exposed.

In the mounting process of the third embodiment, as shown in FIG. 5D, the other surface of the exposed semiconductor wafer W is attached to the adhesive layer 22 of the dicing tape 20 while the semiconductor wafer W and the protective sheet 10 are overlapped. wear. At this time, since the protective sheet 10 is attached to one surface of the semiconductor wafer W, and the release liner 15 is also attached, the semiconductor wafer W is attached to the adhesive layer 22 via the protective sheet 10 and the release liner 15 . can be pressed to Therefore, the semiconductor wafer W can be attached to the adhesive layer 22 while the circuit surface of the semiconductor wafer W is protected.

In the mounting process, the protective sheet 10 is placed on the semiconductor wafer W with the release liner 15 laminated on the protective sheet 10, and the release liner 15 is peeled off from the protective sheet 10 before the protective sheet 10 is cut into small pieces in the expanding process. preferably.

In the third embodiment, steps not specifically mentioned can be performed in the same manner as the steps in the first, second, fourth, or fifth embodiment.
In addition, in the third embodiment, and in the fourth and fifth embodiments described below, the above-described removal process described in the first embodiment may be performed, and the above-described removal process described in the second embodiment may be performed. may be removed. In other words, in each of the removing steps in the third to fifth embodiments, a liquid containing water may be used to remove the small piece 10' of the protective sheet, or the peeling may be performed by a method similar to the method described above. A piece of protective sheet 10' may be removed using adhesive tape T for cleaning.

Next, the fourth embodiment will be described in detail. Regarding the fourth embodiment, the same description as the first to third embodiments will not be repeated. In the fourth embodiment, operations similar to those in the first to third embodiments can be performed unless otherwise specified.

"Fourth Embodiment"
The semiconductor device manufacturing method of the fourth embodiment differs from the third embodiment mainly in that before the mounting process, the semiconductor wafer W is irradiated with a laser beam to form a fragile portion inside the wafer. .
Specifically, the manufacturing method of the semiconductor device of the fourth embodiment includes:
a stealth processing step of forming a fragile portion inside the semiconductor wafer W to which the back grind tape B is attached by a laser beam and preparing to cut the semiconductor wafer W into small pieces;
a protection step of protecting the circuit surface of the semiconductor wafer W by attaching a protective sheet 10 to one surface of the semiconductor wafer W;
a mounting step of attaching the other surface of the semiconductor wafer W (for example, the surface opposite to the circuit surface) to the dicing tape 20 and fixing the semiconductor wafer W to the dicing tape 20;
a curing treatment step of curing the protective sheet 10 by a curing treatment such as irradiation with active energy rays to reduce the adhesive force of the protective sheet 10;
an expanding step of dividing the semiconductor wafer W and the protective sheet 10 into small pieces by stretching the dicing tape 20;
a removing step of removing a small piece 10' of the protective sheet stuck to the semiconductor chip X;
a pick-up step of separating the semiconductor chip X and the adhesive layer 22 and taking out the semiconductor chip X;
and a bonding step of bonding the semiconductor chip X to an adherend.

In the fourth embodiment, as shown in FIG. 6A, a semiconductor wafer W is prepared in a state of being overlapped with the back grinding tape B. As shown in FIG. The semiconductor wafer W in such a state is thinned to a desired thickness by, for example, performing the backgrinding process while the backgrinding tape B is attached.

In the stealth processing step of the fourth embodiment, as shown in FIG. 6B, the semiconductor wafer W overlapping the back grind tape B is irradiated with laser light. The back grind tape B is attached to the surface of the semiconductor wafer W opposite to the circuit surface, for example. The laser light is applied from the circuit surface side of the semiconductor wafer W, for example.

In the protection process of the fourth embodiment, as in the third embodiment, a protection sheet 10 is attached to the semiconductor wafer W as shown in FIG. 6C. As a result, the protective sheet 10 is overlaid on one surface (circuit surface) of the semiconductor wafer W, and the back grind tape B is overlaid on the other surface. After that, the back grind tape B is separated from the semiconductor wafer W. As shown in FIG. A release liner 15 may overlap the protective sheet 10 as shown in FIG. 6C.

After that, as shown in FIGS. 6D and 6E, the mounting process can be performed in the same manner as in the second embodiment (see also FIG. 4A). Then, as shown in FIG. 6F, the protective sheet 10 can be cured in the same manner as in the second embodiment (see also FIG. 4C).

In the fourth embodiment, steps not specifically mentioned can be performed in the same manner as the steps in the first, second, or third embodiment.

Finally, the fifth embodiment will be described in detail. Regarding the fifth embodiment, descriptions similar to those of the first to fourth embodiments will not be repeated. In the fifth embodiment, operations similar to those in the first to fourth embodiments can be performed unless otherwise specified.

"Fifth Embodiment"
The method of manufacturing a semiconductor device according to the fifth embodiment mainly includes attaching the semiconductor wafer W to the adhesive layer 22 of the dicing tape 20 with the protective sheet 10 placed between the semiconductor wafer W and the back grinding tape B. It differs from the other embodiments in that respect.
Specifically, in the manufacturing method of the semiconductor device of the fifth embodiment, as shown in FIG. 7A, a protective sheet 10 is overlaid on the circuit surface of the semiconductor wafer W, and a back grind tape B is further overlaid on the protective sheet 10 . Alternatively, the semiconductor wafer W may be superimposed on the other surface of the protective sheet 10 after the backgrinding tape B is superimposed on one surface of the protective sheet 10 . The semiconductor wafer W may be overlaid on the other surface of the protective sheet 10 before the .

With the semiconductor wafer W, the protective sheet 10, and the back grinding tape B laminated, the surface of the semiconductor wafer W on which the circuit components are not arranged is ground. Specifically, as shown in FIG. 7A, the semiconductor wafer W is ground (back-grinded) with a grinding pad K until it has a predetermined thickness. The grinding process reduces the thickness of the semiconductor wafer W to a predetermined thickness (see FIG. 7B).

Next, in the mounting process, the ground surface of the semiconductor wafer W (the surface on which the circuit components are not arranged) is superimposed on the adhesive layer 22 of the dicing tape 20 . At this time, as shown in FIG. 7C, a protective sheet 10 is attached to the circuit surface of the semiconductor wafer W, and a back grind tape B is attached to the protective sheet 10 .

After superimposing the semiconductor wafer W on the adhesive layer 22 of the dicing tape 20, the stealth processing step can be performed by the same method as described above. Then, the protective sheet 10 attached to the semiconductor wafer W is separated from the back grind tape B, and the back grind tape B is removed (see FIG. 7D). In addition, after removing the back grind tape B, the stealth processing step may be performed.

Thereafter, a curing treatment step of curing the protective sheet 10 to reduce the adhesive strength of the protective sheet 10, an expanding step of dividing the semiconductor wafer W and the protective sheet 10 into small pieces, and affixing to the semiconductor chip X by a method similar to the method described above. A removal step of removing the small piece 10' of the protective sheet attached, a pick-up step of taking out the semiconductor chip X, and a joining step of joining the semiconductor chip X to an adherend can be performed.

The method of manufacturing an electronic component device (for example, a semiconductor device) according to the embodiment of the present invention is as illustrated above, but the present invention is not limited to the method of manufacturing an electronic component device illustrated above.
That is, various forms used in a general manufacturing method of an electronic component device can be employed as long as the effects of the present invention are not impaired.

For example, as described above, the substrate (e.g., semiconductor wafer) used in the manufacturing method of the present invention may be a substrate on which circuit components are arranged on both sides, respectively, as described in the first embodiment. However, as described in other embodiments, it may be a substrate with circuit components disposed on only one side. In other words, only one side of the substrate manufactured by the manufacturing method of the present invention may be a circuit side, or both sides may be circuit sides.

Matters disclosed by this specification include the following.
(I)
a step of superposing a protective sheet for protecting the circuit components on at least one surface of the substrate on which the circuit components are arranged;
The laminate in which the substrate chip obtained by dividing the substrate into small pieces and the small pieces of the protective sheet are overlapped with each other by dividing the laminate in which the substrate and the protective sheet are overlapped with each other into small pieces by dividing the laminate into small pieces so as to leave an interval in the surface direction. a step of making a piece of
and removing a small piece of the protective sheet overlapping the circuit surface of the substrate chip.
(II)
The method for manufacturing an electronic component device according to (I) above, further comprising the step of arranging the circuit surface of the substrate chip toward an adherend and bonding the substrate chip and the adherend.
(III)
The protective sheet contains a water-soluble polymer compound,
In the removing step, the plurality of small pieces of the protective sheet are removed by contacting the plurality of small pieces of the protective sheet with a liquid containing water to dissolve at least a portion of each small piece in the liquid. A method for manufacturing an electronic component device according to (I) or (II).
(IV)
The method for manufacturing an electronic component device according to (III) above, further comprising, before the removing step, increasing the humidity of the gas in contact with the circuit surface.
(V)
In the removing step, the plurality of small pieces of the protective sheet are removed together with the peeling adhesive tape by peeling off the peeling adhesive tape attached to the plurality of small pieces of the protective sheet. ).
(VI)
The protective sheet contains a curable composition,
The method of manufacturing an electronic component device according to (V) above, wherein the protective sheet overlapping the substrate is cured by a curing treatment, and then the laminate of the substrate and the protective sheet is divided into small pieces.
(VII)
the electrode portions as the circuit components respectively arranged on both surfaces of the substrate chip are electrically connected to each other;
3. In the bonding step, a plurality of the substrate chips are stacked, and the electrode portion of one of the substrate chips and the electrode portion of the other substrate chip, which are the adherends, are directly connected to each other. A method for manufacturing an electronic component device according to any one of (II) to (VI).

Matters disclosed by this specification further include the following.
(1)
a step of superposing a protective sheet for protecting the circuit components on at least one surface of the semiconductor wafer on which the circuit components are arranged;
By dividing the layered product of the semiconductor wafer and the protective sheet which overlap each other into small pieces so as to leave an interval in the plane direction, the semiconductor chip formed by the small pieces of the semiconductor wafer and the small pieces of the protective sheet are overlapped with each other. making a piece of laminate;
and removing a small piece of the protective sheet overlapping the circuit surface of the semiconductor chip.
(2)
The method of manufacturing a semiconductor device according to (1) above, further comprising the step of placing the circuit surface of the semiconductor chip toward an adherend and bonding the semiconductor chip and the adherend.
(3)
The laminate of the semiconductor wafer and the protective sheet is stretched in the plane direction in a state where the laminate of the semiconductor wafer and the protective sheet is superimposed on one surface of the dicing tape, thereby dividing the laminate into small pieces, and separating the small pieces of the laminate. A method for manufacturing the semiconductor device according to (1) or (2) above.
(4)
The protective sheet contains a water-soluble polymer compound,
In the removing step, the plurality of small pieces of the protective sheet are removed by contacting the plurality of small pieces of the protective sheet with a liquid containing water to dissolve at least a portion of each small piece in the liquid. A method for manufacturing a semiconductor device according to any one of (1) to (3).
(5)
The method of manufacturing a semiconductor device according to (4) above, wherein the water-soluble polymer compound contains at least one of polyvinyl alcohol and polyvinylpyrrolidone.
(6)
The method for manufacturing an electronic component device according to (5) above, further comprising, before the removing step, increasing the humidity of the gas in contact with the circuit surface.
(7)
In the removing step, the plurality of small pieces of the protective sheet are removed together with the peeling adhesive tape by peeling off the peeling adhesive tape attached to the plurality of small pieces of the protective sheet. ).
(8)
The protective sheet contains a curable composition,
The method of manufacturing a semiconductor device according to (7) above, wherein the protective sheet overlapping the semiconductor wafer is cured by a curing treatment, and then the laminate of the semiconductor wafer and the protective sheet is divided into small pieces.
(9)
The curable composition includes a compound containing a polymerizable carbon-carbon double bond in the molecule, a compound containing a glycidyl group in the molecule, a compound containing an isocyanate group in the molecule, and a carboxy group in the molecule. and at least one curable compound selected from the group consisting of compounds containing a hydroxyl group in the molecule.
(10)
the semiconductor chip has electrode portions disposed on both surfaces and electrically connected to each other;
In the bonding step, at least two of the semiconductor chips are stacked, and the electrode portion of one of the semiconductor chips and the electrode portion of the other semiconductor chip, which are the adherends, are directly connected to each other. A method for manufacturing a semiconductor device according to any one of (1) to (9).

Next, the present invention will be described in more detail by way of experimental examples, but the present invention is not limited to these.

As an example of a method of manufacturing an electronic component device, a method of manufacturing a semiconductor device was carried out as follows.

A commercial product (product name “V-12SR” manufactured by Nitto Denko) was prepared as a dicing tape. Also, a silicon bare wafer was used instead of the semiconductor wafer.
A protective sheet was produced as follows. When producing the protective sheet, a solvent-containing protective sheet composition was applied to one side of the release liner, and the solvent was volatilized to laminate the protective sheet and the release liner. Furthermore, the release liner was attached to the protective sheet so that the protective sheet was placed between the two release liners. A silicon bare wafer (50 μm thick, 300 mm diameter disk) was used instead of the semiconductor wafer.

[Example 1]
(Production of protective sheet a)
Polyvinyl alcohol (commercially available) having a degree of saponification of 65 (mol %) and an average degree of polymerization of 240 was prepared. After dispersing this polyvinyl alcohol (PVA) in water, it was dissolved by heating to 90° C. to prepare an aqueous PVA solution. This PVA aqueous solution was applied onto a release liner a (PET film, thickness 50 μm). The release liner a had a surface treated with silicone release treatment, and the PVA aqueous solution was applied onto this surface using an applicator. Further, a drying treatment was performed at 110° C. for 2 minutes to form a 10 μm thick protective sheet overlaid on one side of the release liner a. After that, a release liner b (PET film, thickness 25 μm) was overlaid on the exposed surface of the protective sheet. The release liner b had a surface treated with silicone release treatment, and this surface was attached to the protective sheet. Thus, a protective sheet a sandwiched between two release liners was produced.
(Mounting process and protection process)
The release liner b was removed from the prepared protective sheet a by peeling off to expose one surface of the protective sheet a. This exposed surface was attached to a silicon bare wafer overlapping the dicing tape.
Specifically, the wafer was bonded to the dicing tape while the silicon bare wafer and the glass carrier were bonded together. After that, the glass carrier was separated from the wafer to expose one side of the wafer.
The exposed surface of the wafer (the surface opposite to the contact surface with the dicing tape) and the exposed surface of the protective sheet a from which the release liner b was removed were bonded together so as to be in contact with each other. A MV3000 vacuum mounter manufactured by Nitto Seiki Co., Ltd. heated to a stage temperature of 90° C. was used for bonding. In this manner, the dicing tape, the silicon bare wafer, and the protective sheet a were laminated in this order.
(Stealth processing process)
Next, the bare silicon wafer was irradiated with a laser beam using DFL7361 manufactured by Disco to form a fragile portion inside the wafer. After that, the release liner a was peeled off.
(Expanding process)
Subsequently, using Disco's DDS2300, the laminate of the wafer and the protective sheet is cut into small pieces at -15 ° C. and 200 mm / s, and small pieces (10 mm × 10 mm rectangular) chips (dies) and Got a protective sheet.
(Removal process)
After that, in order to remove the protective sheet, water was brought into contact with the protective sheet by spraying water on the protective sheet using a water washing mechanism of a cutting device DDS2300 manufactured by Disco. This exposed one surface (temporary circuit surface) of the chip (die).

[Example 2]
(Production of protective sheet b)
In a reaction vessel equipped with a cooling tube, a nitrogen inlet tube, a thermometer and a stirrer, 11 parts by mass of hydroxyethyl acrylate (HEA) as monomers, 89 parts by mass of 2-ethylhexyl acrylate (2EHA) and 89 parts by mass of 2-ethylhexyl acrylate (2EHA) as a thermal polymerization initiator 0.2 parts by mass of azobisisobutyronitrile (AIBN) was added.
Furthermore, butyl acetate was added as a reaction solvent so that the concentration of the monomer was 36% by mass. Thereafter, under a nitrogen stream, polymerization was performed at 62° C. for 4 hours and then at 75° C. for 2 hours to synthesize an acrylic polymer solution A.
To this acrylic polymer solution A, 13 parts by mass of 2-methacryloyloxyethyl isocyanate (product name “Karenzu MOI”, manufactured by Showa Denko KK) and 0.07 parts by mass of dibutyltin dilaurate were added. Then, an addition reaction treatment was carried out at 50° C. for 12 hours in an air stream to obtain an acrylic polymer solution A′.
Next, for 100 parts by mass of the acrylic polymer solution A', 0.8 parts by mass of a polyisocyanate compound (product name "Takenate D-101A", manufactured by Mitsui Chemicals, Inc.) as a cross-linking agent, and a photopolymerization initiator (5 parts by mass of the product name "Omnirad 127, manufactured by IGM" was added to prepare an adhesive solution (hereinafter referred to as adhesive solution A).
Subsequently, using an applicator, the pressure-sensitive adhesive solution A was applied onto the silicone release-treated surface of the release liner a (PET film, thickness 50 μm) having a silicone release-treated surface. A drying treatment was performed at 120° C. for 2 minutes to form a protective sheet b having a thickness of 30 μm overlaid on one side of the release liner a. After that, the silicone release-treated surface of release liner b (PET film, thickness 25 μm) having a silicone release-treated surface was attached to the exposed surface of protective sheet b. It was stored at 50° C. for 24 hours to prepare a UV-curable protective sheet.
(Mounting process and protection process)
The release liner b was peeled off from the prepared protective sheet to expose one surface of the protective sheet. This exposed surface was attached to a silicon bare wafer overlapping the dicing tape.
Specifically, in a state in which the bare silicon wafer and the glass carrier G were bonded together, the wafer was bonded to the dicing tape. After that, the glass carrier G was separated from the wafer to expose one surface of the wafer.
The exposed surface of the wafer (the surface opposite to the contact surface with the dicing tape) and the exposed surface of the protective sheet b from which the release liner b was removed were bonded together so as to be in contact with each other. A MV3000 vacuum mounter manufactured by Nitto Seiki Co., Ltd., which was heated to a stage temperature of 30° C., was used for bonding. In this manner, the dicing tape, the silicon bare wafer, and the protective sheet a were laminated in this order.
(Stealth processing process)
A weak portion was formed inside the wafer by irradiating the wafer with laser light using DFL7361 manufactured by Disco.
(Hardening treatment)
Thereafter, the protective sheet was irradiated with ultraviolet rays of 300 mJ/cm ² from the side opposite to the dicing tape arrangement side (the side of the release liner a) to cure the protective sheet. Then, the release liner a was peeled off from the protective sheet.
(Expanding process)
Subsequently, using Disco's DDS2300, the laminate of the wafer and protective sheet was cut into small pieces at -15°C and 200 mm/s to obtain small pieces of chips (dies) and protective sheets.
(Removal process)
Next, in order to remove the small pieces of the protective sheet, a laminator is used to apply a peeling adhesive tape (adhesive tape product name “No. 360UL”) to the UV-curable protective sheet overlapping the chip (die). attached. After that, the peeling adhesive tape was peeled off. As a result, the protective sheet was removed together with the peeling adhesive tape to expose one surface (temporary circuit surface) of the chip (die).

<Measurement of physical properties of protective sheet>
(silicon adhesion)
The peel strength of the protective sheet from the silicon bare wafer was measured at 25° C. under the above-described measurement conditions and measurement method.
(Breaking strength and breaking elongation)
The breaking strength and breaking elongation were measured at −15° C. under the measurement conditions and measurement method described above.
(tensile modulus)
The tensile elastic modulus was measured at −15° C. and 25° C. under the measurement conditions and measurement method described above.
(Surface free energy)
The surface free energy of the protective sheet at 25° C. was calculated according to the measurement conditions, measurement method, and calculation method described above (however, only Example 1).

[Comparative example]
A chip (die) was produced in the same manner as in Example 1 or Example 2, except that the protective sheet and silicon bare wafer were not attached. Specifically, using DFL7361 manufactured by Disco, a silicon bare wafer attached to a dicing tape was irradiated with a laser beam to form a fragile portion inside the wafer. Thereafter, using DDS2300 manufactured by Disco, the wafer was cleaved into small pieces at -15°C and 200 mm/s.

<Evaluation: Adhesion of Foreign Matter on Chip (Die) Surface>
The exposed surface of the chip (die) (the surface from which the protective sheet was removed) was observed with a digital microscope, and the number of foreign particles in a randomly selected square area of 10×10 mm was counted. When the number of foreign matter was 10 or more, it was judged as defective (×), and when the number of foreign matter was less than 10, it was judged as good (◯).
8 and 9 show photographs of the surface of the chip (die) on which foreign matter adheres in Example 1 and Comparative Example, respectively.

As described above, each manufacturing method of Examples and Comparative Examples was carried out. Table 1 shows the details of the protective sheet used in each manufacturing method and the evaluation results.

As can be seen from the above evaluation results, by manufacturing a semiconductor device by the semiconductor device manufacturing method of the embodiment, adhesion of foreign matter to the circuit surface of the chip (die) could be suppressed. As a result, the electrode portion of the adherend and the electrode portion of the chip (die) can be brought into close contact with each other to ensure electrical continuity. In particular, when a plurality of semiconductor chips having electrode portions formed on both sides and electrically connected to each other are stacked, the electrode portions of the adjacent semiconductor chips can be brought into close contact with each other to ensure electrical continuity. Therefore, it is considered that the reliability of conductive performance in the manufactured semiconductor device can be sufficiently maintained.

By carrying out the manufacturing method of the electronic component device of the embodiment as described above, it is possible to efficiently manufacture a semiconductor device or the like in which a plurality of semiconductor chips are stacked.

The method of manufacturing an electronic component device according to the present invention is suitably used for manufacturing a semiconductor device including, for example, a semiconductor integrated circuit.

10: protective sheet, 10′: small piece of protective sheet,
15: release liner,
20: dicing tape,
21: Base layer, 22: Adhesive layer,
G: glass carrier,
W: semiconductor wafer, X: semiconductor chip, V: through via, D: electrode part,
T: adhesive tape for peeling,
B: Back grind tape.

Claims (6)

a step of superposing a protective sheet for protecting the circuit components on at least one surface of the substrate on which the circuit components are arranged;
The laminate in which the substrate chip obtained by dividing the substrate into small pieces and the small pieces of the protective sheet are overlapped with each other by dividing the laminate in which the substrate and the protective sheet are overlapped with each other into small pieces by dividing the laminate into small pieces so as to leave an interval in the surface direction. a step of making a piece of
and removing a small piece of the protective sheet overlapping the circuit surface of the substrate chip. 2. The method of manufacturing an electronic component device according to claim 1, further comprising the step of arranging the circuit surface of said substrate chip toward an adherend and joining said substrate chip and said adherend. The protective sheet contains a water-soluble polymer compound,
In the removing step, the plurality of small pieces of the protective sheet are removed by contacting a liquid containing water with the plurality of small pieces of the protective sheet to dissolve at least a portion of each small piece in the liquid. Item 3. A method of manufacturing an electronic component device according to Item 1 or 2. 3. The removing step according to claim 1, wherein the plurality of small pieces of the protective sheet are removed together with the peeling adhesive tape by peeling off the peeling adhesive tape attached to the plurality of small pieces of the protective sheet. method of manufacturing an electronic component device. The protective sheet contains a curable composition,
5. The method of manufacturing an electronic component device according to claim 4, wherein the protective sheet overlapping the substrate is cured by a curing treatment, and then the laminate of the substrate and the protective sheet is divided into small pieces. the electrode portions as the circuit components respectively arranged on both surfaces of the substrate chip are electrically connected to each other;
In the bonding step, at least two of the substrate chips are stacked, and the electrode portion of one of the substrate chips and the electrode portion of the other substrate chip, which are the adherends, are directly connected to each other. Item 3. A method for manufacturing an electronic component device according to item 2.

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