TW202317792A - Sputtering device - Google Patents

Abstract

In the present invention, a gas is fed over the entire surface of a target. In the present invention, a vacuum container (2) of a sputtering device (1) is provided with at least one target holder (32) for holding a target (30). The target holder is provided with: a gas introduction part (51) for introducing a gas (10); and a pair of gas release ports (54) for releasing the gas into the vacuum container, the gas release ports (54) being provided at opposing positions in at least a part of the surroundings of the target.

Description

Sputtering device

The invention relates to a sputtering device.

Various sputtering devices have been proposed since then. As an example of a sputtering apparatus, a magnetron sputtering apparatus is mentioned. In this magnetron sputtering apparatus, a magnetic field is formed on the surface of the target by a magnet provided on the back surface of the target, gas in the magnetic field is plasmaized, and ions of the plasmaized gas collide with the target. When the ions collide with the target, sputtering particles fly out from the target, and the particles form a film on a substrate provided to face the target.

It is known that in a sputtering apparatus, the film thickness of a thin film formed on a substrate may vary due to the density of gas on a target. An example of a technique for suppressing the occurrence of this unevenness is disclosed in Patent Document 1. In the sputtering device of Patent Document 1, two targets are provided in a group in a chamber into which a sputtering gas is introduced. Moreover, the sputtering apparatus of patent document 1 is provided with the gas introduction port which introduces a reactive gas from both sides of a set of target, and the exhaust port which exhausts a reactive gas from between a set of target. [Prior art literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open No. 2013-49884

[Problem to be Solved by the Invention] However, in the sputtering device of Patent Document 1, a gas introduction port is provided on one long side of the target for one target among a set of targets, and a gas introduction port is provided on the long side opposite to the long side of the target. exhaust vent. Therefore, there is a possibility that the supply amount of the reactive gas to the target becomes non-uniform in the direction perpendicular to both long sides of the target (the width direction of the target). For this reason, there is a possibility that the amount of sputtering particles flying out may vary over the entire surface of the target. As a result, the film thickness of the thin film formed on the substrate may vary.

Therefore, an object of one aspect of the present invention is to achieve a sputtering device capable of supplying gas over the entire surface of a target. [Means to solve the problem]

In order to solve the above-mentioned problems, a sputtering device according to an aspect of the present invention sputters a target in a vacuum container to form a film on a substrate, and in the sputtering device, the vacuum container includes at least A holding portion, the holding portion includes: a gas introduction portion for introducing gas into the holding portion; and a pair of openings, when viewed from a vertically downward direction at a target arrangement position where the target is arranged in the holding portion, The gas introduced into the holding part is released into the vacuum container over at least a part of the periphery of the target placement position and at positions facing each other across the target placement position. [Effect of the invention]

According to one aspect of the present invention, the gas can be supplied over the entire surface of the target.

[Embodiment 1] Hereinafter, an embodiment of the present invention will be described in detail using FIGS. 1 to 9 .

<Overall structure of the sputtering device> First, the overall structure of the sputtering apparatus 1 of this embodiment is demonstrated using FIG. 1. FIG. FIG. 1 is a diagram showing an example of the overall configuration of a sputtering apparatus 1 according to Embodiment 1. As shown in FIG.

As shown in FIG. 1 , the sputtering apparatus 1 is an apparatus that performs sputtering on a target 30 in a vacuum container 2 into which a gas 10 for sputtering is introduced, and forms a film on a substrate 12 .

Specifically, the sputtering device 1 includes a vacuum container 2 that is evacuated by a vacuum exhaust device 4 . The vacuum vessel 2 is electrically grounded, and a gas 10 for sputtering is introduced into the vacuum vessel 2 . The gas 10 is supplied from the gas source 6 to the target holder 32 through the gas introduction pipe 50 and the gas introduction part 51 while adjusting the flow rate thereof by the flow regulator 8 . Then, the gas 10 is introduced into the vacuum container 2 via the target holder 32 . The insulating part 43 is provided between the gas introduction part 51 and the upper surface part 3 of the vacuum container 2, and between the gas introduction part 51 and the target holder 32. The gas 10 is, for example, argon. In the case of reactive sputtering, the gas 10 can also be a mixed gas of argon and active gas (such as oxygen, nitrogen, etc.). Reactive gases are also called reactive gases.

A substrate holder 14 for holding a substrate 12 is provided in the vacuum vessel 2 . In this embodiment, a substrate bias power supply 16 is included to apply a substrate bias voltage Vs to the substrate holder 14 . The substrate bias voltage Vs may be a negative DC voltage, or a negative pulse voltage, AC voltage, or the like. In addition, the substrate holder 14 may also be electrically grounded when the substrate bias voltage Vs is not applied to the substrate 12 . In addition, 40 is an insulating part which has a vacuum sealing function. In addition, the substrate 12 is an object to be processed in which a thin film is formed by sputtering particles discharged from the target 30 . As the substrate 12, a glass substrate, a semiconductor substrate, or the like can be used, but is not limited thereto.

In addition, a target holder (holding portion) 32 for holding the target 30 is provided at a position facing the substrate holder 14 on the upper surface portion 3 of the vacuum vessel 2 . In FIG. 1 , three target holders 32 are included, but the number of target holders 32 is not limited as long as at least one target holder 32 is included. The target 30 is held at a position facing the substrate 12 inside the vacuum container 2 by the target holder 32 . The planar shape of the target 30 is, for example, a rectangular shape, but is not limited thereto, and may be a circular shape or the like.

The material of the target 30 only needs to correspond to the film formed on the substrate 12 . As an example, when forming an oxide semiconductor thin film on the substrate 12, the target 30 is made of, for example, In-Ga-Zn-O (indium-gallium-zinc-oxygen) or In-Sn-Zn-O (Indium-tin-zinc-oxygen) and other oxide semiconductors. However, the material of the target 30 is not limited to this.

A target bias power supply 34 is connected to the target 30 via a target holder 32 . The target bias power supply 34 supplies (applies) a target bias voltage Vt to the target 30 . The target bias voltage Vt is a voltage for introducing ions (positive ions in this application) into the target 30 in the plasma 22 to be sputtered, and is, for example, a negative DC voltage. The AC voltage may be, for example, a high-frequency voltage of the order of MHz such as 13.56 MHz, or may be a low-frequency voltage of a frequency (for example, about 10 kHz to 100 kHz) lower than the output of the frequency power supply 24 (for example, 13.56 MHz). If a low-frequency voltage is used, interference with the plasma generation operation using the high-frequency power supply 24 can be easily avoided.

Furthermore, an antenna 20 is arranged inside the vacuum container 2 . In the present embodiment, the four antennas 20 are arranged facing each other with the target 30 held by the target holder 32 interposed therebetween.

A high-frequency power supply 24 is connected to each antenna 20 via an integrated circuit 26 . Specifically, an integrated circuit 26 is connected to one end of each antenna 20 , and the other end of each antenna 20 is electrically grounded. One end of the high frequency power supply 24 is also electrically grounded. In addition, 41 is an insulating part which has a vacuum sealing function. In addition, a high-frequency power supply 24 and an integrated circuit 26 may be separately provided for each antenna 20 .

The high-frequency power supply 24 supplies high-frequency power Pr to each antenna 20 . Specifically, by supplying high-frequency power Pr in parallel to each antenna 20 , inductively coupled plasma 22 is generated near the surface of target 30 . The frequency of the high-frequency power Pr output from the high-frequency power supply 24 is, for example, generally 13.56 MHz, but is not limited thereto.

In addition, the sputtering device 1 includes a control device 46 . The control device 46 collectively controls each part of the sputtering device 1 . In particular, the control device 46 controls the power supply from the high-frequency power supply 24 and the target bias power supply 34 . In addition, the control device 46 controls the flow regulator 8 to control the flow rate of the gas 10 introduced into the vacuum vessel 2 .

In addition, the gas introduction pipe 50 connected to the flow rate regulator 8, the gas insulation pipe 501, and the gas introduction part 51 are provided in each target holder 32, However, It abbreviate|omits illustration in FIG. In addition, the high-frequency power supply 24 is connected to each antenna 20 via an integrated circuit 26 , but its illustration is omitted in FIG. 1 . Furthermore, the target bias power supply 34 is connected to the target 30 held by each target holder 32 , but its illustration is omitted in FIG. 1 .

<Structure near the upper surface of the vacuum container> Next, the specific structure of the vicinity of the upper surface part 3 of the vacuum vessel 2 is demonstrated in detail using FIG. 1. FIG. In the vicinity of the upper surface part 3, there are mainly Antenna 20 for generating plasma 22 near the surface of target 30, • Target holder 32 holding target 30 .

(antenna) As shown in FIG. 1 , the antenna 20 is disposed near the target holder 32 inside the vacuum chamber 2 (specifically, near the surface of the target 30 held by the target holder 32 ). In the present embodiment, as shown in FIG. 1 , the plurality of antennas 20 are arranged across the target 30 held by the target holder 32 from both sides, for example, along the sides of the rectangular target 30 .

By arranging the plurality of antennas 20 in this way, plasma 22 can be generated so as to face the entire surface of target 30 . Thereby, sputtering can be performed on the entire surface of the target 30, and the utilization efficiency of the target 30 can be improved. However, if this point is not considered, for example, one antenna 20 may be arranged along one side of the target 30 .

In addition, each antenna 20 is connected to an integrated circuit 26 . Each antenna 20 can be a solid structure blocked in the center, or a hollow structure (eg tubular or cylindrical). In the case of a hollow structure, a cooling water channel may be provided inside, and each antenna 20 may be cooled by a water-cooling structure in which cooling water flows. In addition, each antenna 20 may have a structure in which a capacitor is inserted in the middle of the antenna conductor.

Furthermore, the shape of the antenna 20 is not limited to the above-mentioned shapes, and the overall shape may be a rod shape, or a U-shape, a C-shape, a coil shape, and the like. In addition, the shape of the antenna 20 may be a shape corresponding to the planar shape of the target 30 . For example, when the planar shape of the target 30 is a circular shape, you may make the planar shape of the antenna 20 into a circular shape.

In addition, the antenna 20 has a structure in which all antenna conductors are accommodated inside the insulating member regardless of its structure or shape.

The structure and shape of the antenna 20 described above are merely examples, and the antenna 20 may have a structure or shape capable of generating the plasma 22 .

In addition, high-frequency power Pr is supplied to the antenna 20 independently of supplying the target bias voltage Vt to the target 30 . Specifically, the control device 46 (see FIG. 1 ) independently controls the target bias power supply 34 that supplies the target bias voltage Vt to the target 30 and the high-frequency power supply 24 that supplies high-frequency power Pr to the antenna 20 .

(Structure of Target Holder) The target holder 32 is composed of structural members defining the structure of the target holder 32 , a gas member for introducing the gas 10 near the target 30 , and a magnetic circuit member for forming a magnetic field near the surface of the target 30 . In addition, the target holder 32 is constituted by an electrode member for applying a voltage to the target holder 32 , an insulating member for insulating the electrode member, and a cooling member for cooling the target holder 32 .

Each member of the above-mentioned target holder 32 is demonstrated using FIGS. 2-8. FIG. 2 is a view taken along the line A-A in FIG. 1 of the target holder 32 according to Embodiment 1, and is a plan view in a state where the target holder 32 is assembled. FIG. 3 is a view taken along the line B-B in FIG. 1 of the target holder 32 according to Embodiment 1, and is a bottom view of the state where the target holder 32 is assembled. FIG. 4 is a view taken along line C-C in FIG. 1 of the target holder 32 according to the first embodiment. FIG. 5 is a D-D arrow view in FIG. 1 of the target holder 32 according to the first embodiment. FIG. 6 is a view taken along the line E-E in FIG. 1 of the target holder 32 according to the first embodiment. FIG. 7 is a sectional view taken along line F-F in FIG. 2 of the target holder 32 according to the first embodiment. FIG. 8 is a G-G sectional view in FIG. 2 of the target holder 32 according to the first embodiment.

In addition, in FIG. 3, illustration of the target 30 held by the target holder 32 is abbreviate|omitted for convenience of description.

(Structural member of target holder) First, as structural members of the target holder 32 , for example, as shown in FIGS. 7 and 8 , a target main body 321 and a back plate 322 are included.

The target main body 321 is a member that defines various members of the target holder 32 . Grooves and holes for defining various members, or grooves and holes for assembling various members are formed in the target main body 321 . The functions and structures of various components will be described later.

The back plate 322 is a plate on which the target 30 is mounted. The position where the target 30 is mounted (arranged) on the surface of the back plate 322 facing the substrate holder 14 is referred to as a target arrangement position 30 a (also refer to FIGS. 3 and 6 ). The back plate 322 is disposed on the lower portion of the target body 321 . A part of the gas member (for example, the gas outlet 54 ) is formed on the back plate 322 .

The shapes (planar shapes) of the target main body 321 and the back plate 322 as viewed from the vertically downward direction may be designed to match the shape of the target 30 to be mounted. For example, if the planar shape of the target 30 to be attached is a rectangular shape, the planar shape of the target body 321 and the back plate 322 may be designed as a rectangular shape.

When the planar shapes of the target body 321 and the back plate 322 are rectangular, the corners of the target body 321 and the back plate 322 may be chamfered. In this embodiment, although the planar shape of the target main body 321 and the back plate 322 is a rectangular shape, the corner|angular part of the target main body 321 and the back plate 322 becomes R shape. The reason for this shape is to limit the processing of the upper surface portion 3 where the target body 321 and the back plate 322 are placed, and to reduce the risk of abnormal discharges occurring at the edge portions of the target body 321 and the back plate 322 . However, if this point is not considered, the planar shape of the target body 321 and the back plate 322 may be a rectangular shape without chamfering at the corners.

Furthermore, in this specification, when the planar shape of the target main body 321, the planar shape of the back plate 322 (the planar shape of the target placement position 30a), and the planar shape of the target 30 are rectangular, it should be noted that the following Two meanings. That is, in this specification, the rectangular shape includes (i) a shape in which the corners are not chamfered (rectangular shape in a general sense) and (ii) a shape in which the corners of the rectangle are chamfered.

In this embodiment, the longitudinal directions of the target main body 321 and the back plate 322 extend along the Y-axis direction (for example, in FIG. 7 and FIG. 8 , the depth direction of the paper surface). That is, for example, as shown in FIG. 3 , the longitudinal direction (long side) of the target arrangement position 30a extends along the Y-axis direction, and the target 30 is attached to the back plate so that the longitudinal direction (long side) of the target 30 extends along the Y-axis direction. 322.

(Gas member of target holder) As shown in FIG. 7 , the gas components of the target holder 32 include: a gas introduction pipe 50 , a gas insulation pipe 501 , a gas introduction part 51 , a gas path (main path) 52 , a gas path cover 521 , an orifice 522 , and a gas branch. path (branch path) 53 , and gas discharge port (opening portion) 54 .

The gas introduction pipe 50 is a path (pipeline) for introducing the gas 10 supplied from the gas source 6 into the target holder 32 , and is connected between the gas source 6 and the gas introduction part 51 (see also FIG. 1 ). In addition, as shown in FIG. 1 , a flow regulator 8 is provided in the middle of the gas introduction pipe 50 . In addition, the gas insulating pipe 501 is a pipe for insulating the gas introduction pipe 50 and the gas introduction part 51 .

The gas introduction part 51 is a path formed in the target main body 321 to introduce the gas 10 into the target holder 32 , and communicates the gas introduction pipe 50 and the gas path 52 . One gas introduction portion 51 is provided for each target holder 32 , and is provided at an end of the target holder 32 as shown in FIG. 2 .

The gas path 52 is formed in the target main body 321 to receive the gas 10 introduced from the gas introduction part 51 to flow to the gas branch path 53 , and communicates with the gas introduction part 51 and the gas branch path 53 . In this embodiment, the gas path 52 is provided on the upper surface side of the target body 321, and is formed near the center of the target body 321 when viewed from a vertically downward direction, and is formed to extend along the longitudinal direction of the target body 321 (see FIG. 6). The gas 10 introduced from the gas introduction part 51 is dispersed in the longitudinal direction of the target body 321 by the gas path 52 .

The gas passage cover 521 is a cover for the gas passage 52 . The possibility of the gas 10 flowing out of the gas introduction part 51 and the gas branch path 53 can be reduced by the gas path cover 521 (see FIG. 5 ). In addition, the gas passage cover 521 includes an orifice 522 through which the gas 10 from the gas introduction part 51 flows into the gas passage 52 . By providing the orifice 522 in the gas path cover 521, the gas pressure at the upstream portion of the orifice 522 can be increased.

Here, the gas introduction part 51 has a vacuum sealing function by pressing the flange part of the gas introduction part with the insulating part 43 . In addition, the gas introduction part 51 is connected to the gas passage cover 521, and has the same potential as the target bias voltage Vt. In addition, the gas introduction pipe 50 and the gas introduction part 51 are insulated by the gas insulation pipe 501 . Therefore, discharge can be generated in the gas 10 by the high-frequency potential generated in the gas introduction pipe 50 and the gas introduction part 51 and the pressure of the gas 10 in the gas introduction pipe 50 and the gas introduction part 51 . In order not to generate such a discharge, the length of the gas introduction pipe 50 is specified, and an orifice 522 is provided in the gas passage cover 521 .

The gas branch path 53 is a path formed in the target body 321 for introducing the gas 10 introduced from the gas path 52 to the gas outlet 54 , and communicates with the gas path 52 and the gas outlet 54 . In the present embodiment, a plurality of gas branch paths 53 are formed at positions facing each other across the gas path 52 in the width direction (X-axis direction) of the target body 321 (see FIG. 6 ).

Specifically, as shown in FIG. 6 , one end of the gas branch path 53 communicates with the gas path 52 on each of both side surfaces of the gas path 52 extending along the longitudinal direction (Y-axis direction) of the gas path 52 . In addition, the other end of the gas branch path 53 is located on the lower surface of the target body 321 at a position opposite to the target arrangement position 30 a in the width direction of the target body 321 , and communicates with the gas discharge port 54 .

The gas outlet 54 is an opening formed in the back plate 322 for releasing the gas 10 introduced from the gas branch path 53 into the vacuum container 2 , and communicates with the gas branch path 53 . In the present embodiment, when viewed from the vertically downward direction, a plurality of gas discharge ports 54 are provided over the entire length of the opposing long sides of the target arrangement position 30 a (see FIG. 6 ). In addition, in this embodiment, the some gas discharge port 54 is provided in each long side of the target arrangement position 30a substantially equally, and is provided so that the gas discharge port 54 provided in each long side may oppose each other. Therefore, the gas 10 introduced by the gas introduction part 51 is supplied to the target 30 attached to the target arrangement position 30a so that it may spread substantially uniformly over the whole surface of the target 30 from both long sides of the target 30. Therefore, compared with the case where the gas 10 is supplied from one side of the target 30 , the gas 10 can be supplied substantially uniformly over the entire surface of the target 30 .

In addition, the arrangement position and number of the gas discharge ports 54 are not limited to the above, and may be adjusted so that the gas 10 discharged from the gas discharge ports 54 is supplied substantially uniformly to the entire surface of the target 30 .

For example, the gas discharge port 54 may be provided over the entirety of both short sides of the target arrangement position 30a, or may be provided on each of the long side and the short side of the target arrangement position 30a. However, it is easier to supply the gas 10 substantially uniformly to the entire surface of the target 30 if it is provided on the long side of the target arrangement position 30 a.

In addition, the pair of gas discharge ports 54 does not necessarily have to be provided so as to face each other. For example, the number of gas discharge ports 54 may be different between sides facing each other at the target arrangement position 30a. In addition, the size of each opening of the gas discharge port 54 may be different. Furthermore, one gas discharge port 54 may be provided along the side of the target 30 .

That is, the gas outlets 54 may extend over at least a part of the periphery of the target arrangement position 30 a and be provided at positions facing each other across the target arrangement position 30 a so as to supply the gas 10 substantially uniformly over the entire surface of the target 30 .

Here, the thickness of the gas branch path 53 (cross-sectional area in the YZ cross section) is smaller than the thickness (cross-sectional area in the XZ cross-section) of the gas path 52 (see FIGS. 6 and 7 ). Therefore, the gas 10 flowing in the gas branch path 53 is more difficult to flow than the gas 10 flowing in the gas path 52 . Therefore, the pressure of the gas 10 in the gas path 52 can be increased, and as a result, the pressure can be equalized over the entire gas path 52 . Therefore, the gas 10 can be supplied substantially equally to each gas branch path 53 . In addition, the flow rate of the gas 10 introduced into the target holder 32 is adjusted to be constant. Therefore, by making the gas branch path 53 smaller than the gas path 52, and making the gas outlet 54 smaller than the gas branch path 53, the flow rate of the gas 10 discharged from the gas outlet 54 can be increased. Therefore, it is possible to disperse the gas 10 so as to reduce the density of the entire surface of the target 30 .

(Electrode member and insulating member of the target holder) As shown in FIGS. 2 and 3 , an electrode 71 and an anode 72 are included as electrode members of the target holder 32 . In addition, as shown in FIG. 8 , the insulating member of the target holder 32 includes an insulating bush 421 , a first insulating plate 422 , and a second insulating plate 423 .

The electrode 71 is an electrode for inputting a target bias voltage Vt to the target holder 32 . Electrode 71 One electrode 71 is provided for each target holder 32 , and as shown in FIG. 2 , it is provided at an end portion of the target holder 32 adjacent to the gas introduction portion 51 . Through the electrode 71, the target main body 321, the back plate 322, and the target 30 are charged to a target bias voltage Vt.

The insulating bush 421 is a bush that insulates bolts that fix the target body 321 to the upper surface portion 3 . In the present embodiment, a plurality of insulating bushes 421 are provided at positions facing each other along the longitudinal direction (Y-axis direction) of the target holder 32 via the magnetic field intensity adjustment plate 61 (see FIG. 2 ).

The first insulating plate 422 is an insulating member provided between the upper surface portion 3 and the target body 321 on a plane parallel to the plane on which the target 30 is installed. Specifically, the first insulating plate 422 is disposed between the gas path cover 521 and the first magnetic plate 63 .

The second insulating plate 423 is an insulating member provided between the upper surface portion 3 and the target body 321 on a plane perpendicular to the plane on which the target 30 is placed. The second insulating plate 423 is provided to surround the four corners of the target body 321 .

The insulating bushing 421 as an insulating member, the first insulating plate 422, and the second insulating plate 423 have the target main body 321 and the back plate 322 charged to the target bias voltage Vt, and the vacuum vessel 2 and the upper surface portion 3 electrically grounded. Insulation function.

The anode 72 is an electrode for capturing electrons (secondary electrons) generated by ion collision at the target 30 near the target 30 together with a parallel magnetic field formed between ends of the third magnetic plate 67 described later. Thereby, the density of the plasma 22 near the target 30 can be increased. Furthermore, the anode 72 is electrically grounded.

Since the secondary electrons from the target 30 are captured by the parallel magnetic field, the possibility of the secondary electrons entering the surface of the substrate 12 can be reduced. Therefore, the possibility of temperature rise of the substrate 12 can be reduced. In addition, by setting the magnetic field intensity of the parallel magnetic field to be small, even if the secondary electrons are not captured by the parallel magnetic field, they will not disappear due to cyclotron (registered trademark) motion. The secondary electrons, for example, are incident on the surrounding walls or disappear by recombination in space. Therefore, the influence of the secondary electrons on the increase in density of the plasma 22 near the surface of the substrate 12 can be reduced.

In this embodiment, as shown in FIG. 3 and FIG. 8 , the anode 72 is provided near the target placement position 30 a and has an annular shape similar to the outer edge of the target placement position 30 a. In the present embodiment, the anode 72 is provided so as to cover the gas outlet 54 and the outer edge of the target 30 arranged at the target arrangement position 30 a. In addition, the anode 72 is provided on the target holder 32 with a gap from the outer edge of the target 30 . Therefore, the gas 10 discharged from the gas discharge port 54 can be diffused toward the target 30 from the gap. In addition, the third magnetic plate 67 described later is not in contact with the plasma 22 due to the anode 72 . Therefore, the risk of impurities being generated inside the vacuum container 2 due to the contact between the third magnetic plate 67 and the plasma 22 can be reduced.

(about the magnetic circuit) Here, the magnetic circuit will be described before describing the magnetic circuit members of the target holder 32 . The magnetic circuit is a circuit that generates a magnetic field and is composed of a magnet and a magnetic member magnetized by the magnet.

A magnet is a substance that generates a magnetic field by magnetomotive force, and causes magnetic flux to flow to the outside of the magnet. The magnetic member is a member through which the magnetic flux generated by the magnet passes. Examples of the magnetic member include ferromagnetic materials with high magnetic permeability such as yokes (iron yokes) and iron.

A void as a gap may also be formed in the magnetic circuit. A gap may be formed between two magnetic members forming a magnetic circuit. A substance with a lower magnetic permeability than the magnetic member (for example, air) is inserted into the gap. Therefore, the reluctance in the air gap is greater than that in the magnetic member. Therefore, by adjusting the width of the gap (interval between two magnetic members) provided in the magnetic circuit, the magnetic resistance of the entire magnetic circuit can be changed.

(Magnetic circuit member of target holder) As shown in FIG. 8 , the magnetic circuit member of the target holder 32 is a member forming the above-mentioned magnetic circuit, and includes a magnet 65 and a magnetic member. As the magnetic member, a magnetic field intensity adjustment plate (magnetic adjustment member) 61 , a magnetic path bolt (fixing member) 62 , a first magnetic plate 63 , a magnet holding portion 64 , a second magnetic plate 66 , and a third magnetic plate 67 are included. .

The magnetic field intensity adjustment plate 61 is a magnetic member provided on the upper surface portion 3 (that is, the upper surface portion 320 of the target holder 32 ) exposed to the outside air side of the vacuum container 2 . The magnetic field intensity adjustment plates 61 are a pair of magnetic members extending in the longitudinal direction of the target holder 32 (see FIG. 2 ). Furthermore, a gap 61 a is formed between the pair of magnetic field intensity adjustment plates 61 . That is, the gap 61 a is defined by the magnetic field intensity adjustment plate 61 . In addition, a plurality of elongated holes 61 b extending in the width direction (X-axis direction) of the air gap 61 a are formed in the magnetic field strength adjustment plate 61 (see FIGS. 2 and 9 ) passing through the magnetic path bolts 62 . FIG. 9 is an enlarged view of part H in FIG. 2 .

The magnetic path bolt 62 is a magnetic member that fixes each magnetic field intensity adjustment plate 61 to the target holder 32 . Specifically, the magnetic path bolt 62 is passed through the elongated hole 61 b of the magnetic field strength adjustment plate 61 and fixed to the first magnetic plate 63 , thereby fixing the magnetic field strength adjustment plate 61 to the target holder 32 .

The length of the long hole 61 b in the width direction (X-axis direction) is larger than the shaft diameter of the magnetic path bolt 62 . Therefore, the penetrating position of the magnetic path bolt 62 in the elongated hole 61b is variable. That is, the fixed position of the magnetic field intensity adjustment plate 61 with respect to the target holder 32 can be changed by the amount corresponding to the length of the long hole 61b in the width direction. Therefore, by adjusting the fixed position of the magnetic field strength adjustment plate 61, the width of the gap 61a can be adjusted. In this way, the magnetic field intensity adjustment plate 61 and the magnetic path bolt 62 function as an adjustment mechanism for adjusting the width of the air gap 61 a.

Furthermore, in this embodiment, both the magnetic field intensity adjustment plates 61 are formed with the elongated holes 61b, but the present invention is not limited thereto. For example, the long hole 61 b may be formed in only one of the magnetic field intensity adjustment plates 61 , and the other magnetic field intensity adjustment plate 61 may be fixed to the upper surface portion 3 . Even in this case, the position of one of the magnetic field intensity adjustment plates 61 relative to the other magnetic field intensity adjustment plate 61 can be changed, so the width of the gap 61a can be adjusted.

The first magnetic plates 63 are a pair of magnetic members extending in the longitudinal direction of the target holder 32 (see FIG. 4 ). The first magnetic plates 63 are respectively fixed between the first insulating plate 422 and the upper surface portion 3 so as to correspond to the two magnetic field intensity adjustment plates 61 .

The magnet holder 64 is a pair of magnetic members that hold the magnet 65 . The magnet holding parts 64 extend along the longitudinal direction of the target holder 32 , and can hold a plurality of magnets 65 in each of the magnet holding parts 64 (see FIG. 4 ). The magnet holders 64 are respectively provided at positions facing and close to the first magnetic plates 63 . Furthermore, the magnet holding portion 64 may also be in contact with the first magnetic plate 63 . That is, a portion holding the magnet 65 may be provided on a part of the first magnetic plate 63 .

The magnet 65 is a member having a magnetic strength (magnetomotive force) capable of magnetizing the magnetic member. As the magnet 65, for example, a semi-permanent magnet is used, and in this case, a desired magnetic circuit can be formed inexpensively and easily. As the magnet 65 , magnets with different magnetic poles are used for one of the magnet holding portions 64 and the other magnet holding portion 64 . For example, one of the magnet holding parts 64 holds the magnet 65 of the N pole, and the other magnet holding part 64 holds the magnet 65 of the S pole.

The second magnetic plates 66 are a pair of magnetic members provided in contact with the magnet holders 64 , respectively, and extend in the longitudinal direction of the target holder 32 (see FIG. 5 ). The second magnetic plates 66 are respectively fixed between the second insulating plates 423 and the upper surface portion 3 . Furthermore, as long as a magnetic circuit can be formed, the second magnetic plate 66 may be provided at a position spaced from the magnet holding portion 64 .

The third magnetic plates 67 are a pair of magnetic members respectively provided in contact with the second magnetic plates 66 , and extend in the lengthwise direction of the target holder 32 . The third magnetic plate 67 is fixed between the anode 72 and the second magnetic plate 66 by fixing the anode 72 to the fixing member (for example, a bolt) of the second magnetic plate 66 (see FIG. 8 ). Moreover, the 3rd magnetic plate 67 is arrange|positioned at the position which opposes across the target 30 arrange|positioned at the target arrangement|positioning position 30a, seeing from a vertical downward direction. That is, the third magnetic plate 67 is provided so as to cover the gas outlet 54 together with the anode 72 .

As described above, one magnetic circuit is formed by the magnetic field intensity adjustment plate 61 , the magnetic path bolt 62 , the first magnetic plate 63 , the magnet holder 64 , the magnet 65 , the second magnetic plate 66 , and the third magnetic plate 67 . That is, the magnetomotive force of the magnet 65 appears at the ends of the third magnetic plates 67 , and a parallel magnetic field is formed between the ends of the third magnetic plates 67 .

(Cooling member of target holder) As shown in FIGS. 2 , 3 and 7 , the cooling member of the target holder 32 is a member for water cooling the target 30 and includes a cooling water port 81 and a cooling water path 82 .

The cooling water port 81 cools the target holder 32 by supplying/discharging cooling water to the target holder 32 . As shown in FIG. 2 , a cooling water port 81 is provided for each target holder 32 , and is provided at the end of the target holder 32 opposite to the end where the gas introduction part 51 is provided. As the cooling water, a refrigerant other than water can be used.

The cooling water path 82 is a U-shaped groove provided on the lower surface of the target body 321 along the longitudinal direction of the target body 321 (see FIGS. 3 and 7 ). The target holder 32 is cooled by making the cooling water supplied from the water supply port of the cooling water port 81 flow in a U-shape and draining it from the drain port of the cooling water port 81 .

＜Method for homogenizing film thickness distribution＞ In order to make the film thickness distribution of the thin film formed on the substrate 12 uniform, · Homogenization of the distribution (pressure distribution) of the gas 10 on the surface of the target 30 - Uniform distribution of gas 10 between targets 30 ・A region where a parallel magnetic field is formed on the surface of the target 30 become one of the important elements. Descriptions related to these and their methods will be described in detail.

(distribution of gas on the surface of the target) In the present embodiment, the sputtering apparatus 1 discharges the gas 10 into the vacuum container 2 from a plurality of gas discharge ports 54 provided in the longitudinal direction of the target holder 32 across the target arrangement position 30a, thereby performing sputtering. . As described above, the anode 72 is provided with a gap between the target 30 and covers the outer edge of the target 30 . That is, the anode 72 is provided below the target 30 so as to protrude toward the target 30 side. Therefore, the gas 10 released from the gas discharge port 54 is discharged toward the surface of the target 30 toward the protruding direction of the anode 72 , that is, toward the central region of the target 30 . Therefore, the sputtering apparatus 1 can distribute the gas 10 over the entire surface of the target 30 .

Furthermore, by adjusting the flow rate of the gas 10 by the flow regulator 8, the gas 10 can be distributed over the entire surface of the target 30 at a substantially uniform concentration. Therefore, the sputtering particles can be emitted from the target 30 substantially uniformly, and the film thickness of the thin film formed on the substrate 12 can be made substantially uniform. That is, the film thickness distribution of the substrate 12 can be made uniform.

(distribution of gas between targets) In the present embodiment, in order to perform sputtering on a large substrate, a plurality of target holders 32 are provided. A plurality of gas outlets 54 are provided in each target holder 32 as described above. Therefore, the gas 10 discharged from the gas discharge port 54 is supplied to each target holder 32 over the entire surface of the target 30 . In addition, the pipelines (pipes) such as each gas introduction part 51 are designed so that the total flow rate supplied to each gas introduction part 51 is adjusted by the flow rate regulator 8, and the gas 10 is distributed approximately equally in each gas introduction part 51. flow. Therefore, in each target holder 32 , the discharge amount of the gas 10 from the gas discharge port 54 can be made uniform. Therefore, since the distribution of the gas 10 in each target holder 32 can be made uniform, the film thickness distribution of the substrate 12 facing each target holder 32 can be made uniform. In addition, the flow regulator 8 may be provided in each target holder 32 individually. Also in this case, the flow rate of the gas 10 flowing in each gas introduction part 51 can be made uniform.

In addition, in the present embodiment, the sputtering apparatus 1 discharges the gas 10 to the target 30 from a position close to the target 30 on both long side sides of the target 30 . Therefore, compared with the structure in which reactive gas is introduced from both sides of a set of targets 30 and the reactive gas is exhausted from between a set of targets 30 (for example: the sputtering device of Patent Document 1), the target 30 can be shortened. distance between. That is, the pitch between the target holders 32 can be reduced. Therefore, since the area of the substrate 12 that does not face the target 30 can be reduced, the film thickness distribution of the substrate 12 can be further made uniform.

Furthermore, in this embodiment, one vacuum exhaust device 4 is provided. In addition, the vacuum evacuation device 4 is provided at a different position from the substrate holder 14 provided at the center of the bottom surface of the vacuum container 2 . Therefore, the distances between the respective target holders 32 and the vacuum evacuation device 4 are different from each other. As a result, the evacuation speed differs at the arrangement position of each target holder 32 .

In consideration of this point, in order to further uniformize the distribution of the gas 10 to each target 30 , for example, a flow regulator 8 may be provided for each target holder 32 . Thereby, the flow rate of the gas 10 can be adjusted according to the speed of vacuum exhaust at the position where each target holder 32 is arranged. Therefore, regardless of the arrangement position of the evacuation device 4 , the distribution of the gas 10 to each target 30 can be made uniform, and as a result, the film thickness distribution of the substrate 12 can be made uniform.

Alternatively, a plurality of vacuum pipes connected to the vacuum evacuation device 4 may be arranged at symmetrical positions with respect to the target holder 32 group. For example, the vacuum piping may be provided on two opposing side walls of the vacuum container 2 , that is, two side walls extending along the longitudinal direction of the target holder 32 . In addition, for example, the vacuum piping may be provided at the bottom of the vacuum container 2 near each of the two side walls. In this case, since the difference in the speed of vacuum exhaust at the arrangement position of each target holder 32 can be reduced, the distribution of the gas 10 to each target 30 can be made uniform. In addition, the same effect can also be obtained by the structure of Embodiment 2 mentioned later.

(The effect brought by the magnetic circuit) As shown in FIG. 8 , a pair of third magnetic plates 67 is arranged near the target 30 , and magnetic poles are formed on the pair of third magnetic plates 67 , respectively. Therefore, at least at a position facing the entire surface of the target 30 , a magnetic field distribution (parallel magnetic field) having a component of magnetic force lines substantially parallel to the surface can be formed. Therefore, electrons (secondary electrons) generated by ion collisions at the target 30 can be efficiently captured.

In addition, electrons can be captured uniformly over the entire surface of the target 30 by forming a parallel magnetic field at a position facing the entire surface of the target 30 . By arranging a plurality of antennas 20 as described above, plasma 22 can be generated so as to face the entire surface of target 30 . However, even in this case, the density of the plasma 22 may be localized on the surface of the target 30 . By trapping electrons by forming the parallel magnetic field, localization of the density of the plasma 22 can be suppressed. Therefore, sputtering can be uniformly performed on the entire surface of the target 30 . Therefore, the film thickness distribution of the substrate 12 can be made uniform.

Since electrons fly out from the target 30 in a wide range, the farther the magnetic poles formed on the third magnetic plate 67 are from the surface of the target 30, the lower the probability (capture rate, yield) of capturing the electrons, and the sputtering device 1 The structure becomes larger. By providing the third magnetic plate 67 in the vicinity of the target 30 , the yield of electrons can be improved while reducing the size of the sputtering apparatus 1 when the third magnetic plate 67 is provided.

Furthermore, the magnetic field strength (magnetic flux density) formed by the magnetic circuit is smaller than the strength of the magnetron discharge. In the sputtering apparatus 1 , since the antenna 20 generates the plasma 22 , it is not necessary to generate a high-intensity magnetic field such as a magnetron discharge.

(Adjustment of the magnetic field by the magnetic circuit) In addition, the strength of the parallel magnetic field is adjusted by the magnetic strength of the magnet 65 and the width of the gap 61 a formed between the pair of magnetic field strength adjustment plates 61 . As described above, the long hole 61 b extending in the width direction of the magnetic field strength adjustment plate 61 is formed in the magnetic field strength adjustment plate 61 . Therefore, within the range of the elongated hole 61b, the width of the gap 61a can be adjusted by changing the position where the magnetic path bolt 62 fixes the magnetic field intensity adjustment plate 61 . Therefore, the reluctance in the air gap 61a can be adjusted, and thus the reluctance of the magnetic circuit can be adjusted. Therefore, since the intensity of the parallel magnetic field can be adjusted, electrons can be uniformly captured over the entire surface of the target 30 . It should be noted that the width of the gap 61 a may be adjusted to a width capable of forming a parallel magnetic field having a strength sufficient to capture electrons uniformly over the entire surface of the target 30 .

In addition, in the present embodiment, the width of the gap 61 a can be adjusted for each target holder 32 . Therefore, electrons can be captured uniformly over the entire surface of the target 30 in each target holder 32 .

In addition, a substance (in this embodiment, air) having a magnetic permeability different from that of the magnetic member is inserted into the gap 61 a. Therefore, by forming the air gap 61a in the magnetic circuit, it is possible to form a magnetic circuit having a magnetic resistance different from a magnetic circuit formed only by magnets and magnetic members.

Furthermore, since the magnetic permeability of air is smaller than that of the magnetic member, the air gap 61a has a large magnetic resistance. Therefore, the larger the width of the air gap 61a, the smaller the intensity of the parallel magnetic field, and the worse the intensity distribution thereof. When the intensity distribution of the parallel magnetic field deteriorates, the parallel magnetic field cannot be formed on the entire surface of the target 30, and unevenness may occur in capturing electrons. Therefore, the width of the gap 61 a is set to such a degree that a parallel magnetic field can be formed at a position facing the entire surface of the target 30 in consideration of the magnetic permeability of the substance (here, air) filling the gap 61 a.

(miniaturization of sputtering equipment) In this embodiment, a magnetic circuit and a gas discharge port 54 are provided inside the target holder 32 . In addition, as the gas outlet 54 is provided inside the target holder 32 , the gas path 52 and the gas branch path 53 are also provided inside the target holder 32 . Therefore, since it is not necessary to construct the path of the gas 10 between the target holders 32, several target holders 32 can be attached to the upper surface part 3 so that several target holders 32 may adjoin each other. Therefore, the size of the sputtering apparatus 1 can be reduced. Moreover, the area|region of the board|substrate 12 which does not oppose the target 30 can be reduced by downsizing the sputtering apparatus 1. FIG. Therefore, the film thickness distribution of the substrate 12 can be further uniformed.

(summary) As described above, the distribution of the gas 10 on the surface of the target 30 can be made uniform according to the arrangement positions of the gas discharge ports 54 described above. That is, according to this arrangement position, the gas 10 can be uniformly supplied over the entire surface of the target 30 . Therefore, the film thickness distribution of the substrate 12 can be made uniform. In addition, by adjusting the width of the gap 61a described above, the strength of the parallel magnetic field can be adjusted so that electrons can be uniformly captured over the entire surface of the target 30 . The film thickness distribution of the substrate 12 can also be made uniform by this adjustment.

In addition, in order to adjust the film thickness distribution of the substrate 12 , the flow rate of the gas 10 and the position of the magnetic field intensity adjustment plate 61 (adjustment of the gap 61 a ) can be adjusted by using the flow regulator 8 outside the vacuum vessel 2 . Therefore, the film thickness distribution of the substrate 12 can be easily adjusted without opening the vacuum container 2 .

[Embodiment 2] Hereinafter, other embodiments will be described in detail using FIGS. 10 and 11 . In addition, for convenience of description, the same code|symbol is attached|subjected to the member which has the same function as the member demonstrated in the said embodiment, and the description is not repeated.

In Embodiment 1, the gas 10 is collectively exhausted by one vacuum exhaust device 4 , but in Embodiment 2, the sputtering apparatus 1 also includes a plurality of exhaust ports (exhaust parts) 55 . FIG. 10 is a cross-sectional view showing the detailed structure inside the vacuum vessel 2 according to the second embodiment. FIG. 11 is a view taken along the line H-H in FIG. 10 of the target holder 32 according to Embodiment 2, and is a bottom view in a state where the target holder 32 is assembled.

As shown in FIG. 10 , the exhaust port 55 is connected to a vacuum exhaust device for evacuating the inside of the vacuum container 2 , and is an exhaust port for exhausting the gas 10 released from the gas discharge port 54 . The exhaust port 55 is provided at a position adjacent to the target holder 32 on the upper surface portion 3 . In the present embodiment, it is provided between a plurality of target holders 32 . As shown in FIG. 11 , a plurality of exhaust ports 55 are provided along the longitudinal direction of the target holder 32 .

By including the exhaust port 55 near the target holder 32 as described above, a gas flow in which the gas 10 discharged from the gas discharge port 54 flows toward the exhaust port 55 is generated. The distribution of the gas 10 over the entire surface of the target 30 can be made more uniform by the generation of this gas flow. In addition, since the exhaust port 55 is provided between the plurality of target holders 32, the airflow generated in each target holder 32 becomes easy to become uniform. Therefore, it becomes easy to make the distribution of the gas 10 uniform at each target 30 , and as a result, the film thickness distribution of the substrate 12 can be made uniform.

In addition, the exhaust port 55 may be provided along the short-side direction of the target holder 32 at a position adjacent to the target holder 32 . That is, the exhaust port 55 has only to be provided in at least a part of the periphery of the target holder 32 . When the exhaust port 55 is provided along the longitudinal direction of the target holder 32 , the distribution of the gas 10 on the entire surface of the target 30 can be made more uniform. In addition, the exhaust port 55 may be a single opening provided along the long-side direction or the short-side direction of the target holder 32 .

In addition, only one target holder 32 may be provided in the inside of the vacuum container 2 . Even in this case, by providing the exhaust ports 55 as described above at positions adjacent to the target holder 32 , the distribution of the gas 10 over the entire surface of the target 30 can be made more uniform. That is, by providing the exhaust port 55 in the vicinity of one target holder 32, the distribution of the gas 10 over the entire surface of the target 30 can be made more uniform.

In addition, in this embodiment, the vacuum exhaust device 4 may not be provided directly in the vacuum container 2 . In addition, during the sputtering, the vacuum evacuation device 4 is stopped, and the evacuation is performed only through the exhaust port 55 . In the case of these structures, the gas 10 is exhausted only from the exhaust port 55 without using the vacuum exhaust device 4 . Therefore, since the variation in the exhaust velocity of the gas 10 in each target holder 32 can be reduced, the distribution of the gas 10 at each target 30 can be made more uniform. In addition, the flow regulators 8 are provided corresponding to the target holders 32 , so that the distribution of the gas 10 at the targets 30 can be made more uniform even if the flow rates of the gas 10 are not adjusted accurately by the flow regulators 8 .

[Embodiment 3] Hereinafter, other embodiments will be described in detail using FIG. 12 . In addition, for convenience of description, the same code|symbol is attached|subjected to the member which has the same function as the member demonstrated in the said embodiment, and the description is not repeated.

FIG. 12 is a schematic diagram of the magnetic field intensity adjustment plate 61 of the first embodiment and the magnetic field intensity adjustment plate 610 of the third embodiment. Reference numeral 1201 in FIG. 12 indicates the magnetic field intensity adjustment plate 61 , and reference numeral 1202 indicates the magnetic field intensity adjustment plate 610 . In Embodiment 1, each of the pair of magnetic field strength adjustment plates 61 is composed of one plate. Therefore, the gap 61 a formed between the magnetic field strength adjustment plates 61 has the same width (length L) with respect to the longitudinal direction of the magnetic field strength adjustment plates 61 . On the other hand, in Embodiment 3, a pair of magnetic field intensity adjustment plates 610 (magnetic adjustment members) are each divided into a plurality of sections in the longitudinal direction of the magnetic field intensity adjustment plates 610 .

Specifically, the pair of magnetic field intensity adjustment plates 610 is a magnetic field plate group composed of a plurality of paired magnetic field plates. As shown in FIG. 12 , in this embodiment, a pair of magnetic field adjustment plates 610 has three pairs of magnetic field plates 611 , 612 and 613 in the length direction of the magnetic field adjustment plate 610 . The width and length of the gap 61c formed by the first group of magnetic field plates 611 is L1. The width and length of the gap 61d formed by the second group of magnetic field plates 612 is L2. The width and length of the gap 61e formed by the third group of magnetic field plates 613 is L3. The magnetic field plate 611 , the magnetic field plate 612 , and the magnetic field plate 613 are arranged in this order and arranged on the upper surface portion 320 of the target holder 32 .

Like the magnetic field adjustment plate 61 , long holes (not shown in FIG. 12 ) extending in the width direction of the magnetic field adjustment plate 610 are formed in the magnetic field plate 611 , the magnetic field plate 612 , and the magnetic field plate 613 . Thereby, the length L1, the length L2, and the length L3 of the respective widths of the gap 61c, the gap 61d, and the gap 61e can be specified. That is, by adjusting the length L1, the length L2, and the length L3 respectively, the intensity of the parallel magnetic field can be adjusted according to the position of the target 30 in the longitudinal direction. Since the unevenness of the intensity of the parallel magnetic field in the longitudinal direction of the target 30 can be easily reduced, a large effect can be expected particularly when the target 30 is elongated.

Here, in general, in the longitudinal direction of the target 30 , the closer to the end region of the target 30 , the weaker the intensity of the parallel magnetic field tends to be. Therefore, for example, as shown in FIG. 12 , the widths 61c and 61e of the gaps corresponding to the two end regions of the target 30 are made narrower than the width of the gap 61d corresponding to the central region of the target 30 (L1≒L3<L2), Thereby, the magnetic field strength in the gap 61c and the gap 61e can be made stronger than the magnetic field strength in the gap 61d.

However, what is necessary is just to adjust width 61c, width 61d, and width 61e so that the intensity|strength of a parallel magnetic field may become uniform over the whole surface of the target 30. FIG. For example, the length L1, the length L2, and the length L3 may be set to different lengths depending on the arrangement of the target 30 or the like.

Furthermore, the magnetic field intensity adjustment plate 610 does not necessarily need to be divided into three partitions of the magnetic field plate 611 , the magnetic field plate 612 and the magnetic field plate 613 , and can be divided into any number. In addition, the length of the width 61 a may be different at each position in the longitudinal direction of the magnetic field intensity adjustment plate 61 by bending the pair of magnetic field intensity adjustment plates 61 respectively. For example, the shape of the magnetic field intensity adjustment plate 61 may be defined such that the width 61 a becomes the largest at the central portion in the longitudinal direction of the magnetic field intensity adjustment plate 61 .

In addition, in this embodiment, both the magnetic field intensity adjustment plate 610 is divided into a plurality of partitions, but it is not limited thereto. For example, only one of the magnetic field intensity adjustment plates 610 may be divided into multiple partitions. Even in this case, the width of each position in the longitudinal direction of the magnetic field intensity adjustment plate 610 can be individually adjusted.

[Modification 1] In Embodiment 1, air is inserted into the gap 61a as a substance having a magnetic permeability different from that of the magnetic member. In this modified example, a substance having a magnetic permeability different from that of air may be inserted into the gap 61a. Thereby, the reluctance of the magnetic circuit can be adjusted, and as a result, the strength of the parallel magnetic field can be adjusted. For example, in the case of inserting carbon steel (permeability: 1.26×10 ⁻⁴ μH/m) about 100 times that of air (permeability: 1.26×10 ⁻⁴ μH/m) into the gap 61 a , the reluctance of the magnetic circuit is 1/100. Therefore, the strength of the parallel magnetic field can be increased. In addition, non-magnetic metals (for example: aluminum) or engineering plastics (for example: Poly Ether Ether Ketone (PEEK)) and other substances with lower magnetic permeability than the magnetic components can also be inserted into the gap 61 a.

In addition, the magnetic field strength adjustment plate 61 may be formed not from a pair of magnetic members but from a single plate (for example, a plate made of PEEK) without a gap. In this case, the magnetic resistance of the magnetic circuit can be changed by replacing the magnetic field strength adjustment plate 61 with another magnetic field strength adjustment plate 61 having a magnetic permeability different from that of the magnetic field strength adjustment plate 61 .

[Modification 2] In Embodiment 1, the pair of magnets 65 is provided inside the upper surface part 3, but the position where the magnets 65 are provided is not limited to this position. For example, instead of the magnetic field intensity adjustment plate 61 , one magnet having an N pole and an S pole may be disposed on the surface of the upper surface portion 3 . Alternatively, an N-pole magnet and an S-pole magnet may be arranged on the surface of the upper surface portion 3 . In this case, the strength of the parallel magnetic field can be adjusted by replacing the magnet.

[Modification 3] In the above-mentioned embodiments, the plasma 22 generated by the antenna 20 is ionized, but the present invention is not limited thereto. For example, without the antenna 20, a magnetic circuit may form a parallel magnetic field having a strength equal to or greater than that of a magnetron discharge.

〔Summarize〕 A sputtering device according to one aspect of the present invention sputters a target in a vacuum container to form a film on a substrate, and in the sputtering device, the vacuum container includes at least one holding portion for holding the target, and the sputtering device includes: The holding unit includes: a gas introduction unit for introducing gas into the holding unit; and a pair of openings extending over the target placement position where the target is placed in the holding unit when viewed from a vertically downward direction. At least a part of its periphery is provided at a position opposite to the target arrangement position, and the gas introduced into the holding part is released into the vacuum container.

According to the above structure, the gas can be supplied at a substantially uniform pressure from the periphery of the target over the entire surface of the target. Therefore, unevenness in gas distribution over the entire surface of the target can be reduced. Therefore, the possibility of variations in the film thickness of the thin film formed on the substrate can be reduced.

In the sputtering apparatus according to one aspect of the present invention, the shape of the target arrangement position when viewed from the vertically downward direction may be a rectangular shape, and the openings may face each other across the target arrangement position. set for the whole of the edge.

According to the structure, the gas can be supplied more uniformly over the entire surface of the target.

In the sputtering apparatus of one aspect of this invention, the said opening part may be provided over the whole of the long side which opposes the said target arrangement position.

According to the structure, the gas can be supplied more uniformly over the entire surface of the target.

In the sputtering apparatus according to one aspect of the present invention, the holding unit may include a magnet and a magnetic member magnetized by the magnet, the magnet and the magnetic member form a magnetic circuit, and the magnetic circuit is connected to the target. A magnetic field is formed at an arrangement position, a gap is formed in a part of the magnetic circuit, and a part of the magnetic circuit in which the gap is formed is provided outside the vacuum container.

According to the above structure, the magnetic resistance of the magnetic circuit can be adjusted without opening the vacuum container by the gap provided outside the vacuum container.

In the sputtering device according to one aspect of the present invention, the holding unit may include an adjustment mechanism for adjusting the width of the gap.

According to the above structure, by adjusting the width of the air gap, the reluctance of the magnetic circuit can be adjusted.

In the sputtering apparatus according to one aspect of the present invention, the adjustment mechanism may include a pair of magnetic adjustment members, and the pair of magnetic adjustment members may be provided on the holding portion as a part of the magnetic member. surface portion, and define the gap, and at least one magnetic adjustment member of the pair of magnetic adjustment members is formed with a long hole, and the long hole passes through as a part of the magnetic member to fix the magnetic adjustment member to the The fixing member of the holding part extends along the width direction of the gap, and the penetration position of the fixing member in the long hole can be changed.

According to the above configuration, the width of the gap can be changed by allowing the penetrating position of the long hole in the magnetic adjustment member to be changed.

In the sputtering apparatus according to one aspect of the present invention, the shape of the target arrangement position when viewed from the vertically downward direction may be a rectangular shape, and the pair of magnetic adjustment members may be arranged along the target arrangement position. The length direction of the pair of magnetic adjustment members is extended, and at least one magnetic adjustment member in the pair of magnetic adjustment members is divided into a plurality of partitions along the length direction, and the elongated hole is defined for each of the plurality of partitions. The width of the gap is defined by the penetration position of the fixing member.

According to the structure, different widths of the gaps can be specified for each partition. Therefore, the magnetic resistance of the magnetic circuit can be adjusted in the longitudinal direction of the target arrangement position.

In the sputtering apparatus according to one aspect of the present invention, a substance having a magnetic permeability different from that of the magnetic member may be inserted into the gap.

According to the above structure, the magnetic resistance of the magnetic circuit can be adjusted by inserting a substance having a magnetic permeability different from that of the magnetic member in the gap.

In the sputtering apparatus which concerns on 1 aspect of this invention, the said holding|maintenance part may be provided in some numbers.

According to the structure, a larger substrate can be sputtered with a plurality of targets.

In the sputtering apparatus according to one aspect of the present invention, the vacuum container may include a plurality of exhaust parts for evacuating the inside of the vacuum container, and the exhaust parts may be adjacent to the holding part. ground setting.

According to the structure, the distribution of the gas over the entire surface of the target can be made more uniform.

In the sputtering device according to one aspect of the present invention, the holding part may include a gas path connecting the gas introduction part and the opening part, and the gas path may include a main path received from the the gas introduced by the gas introduction part; and a plurality of branch paths communicating with the main path to introduce the gas in the main path to the opening, the thickness of each of the plurality of branch paths being smaller than that of the main path thick and small.

According to the above configuration, the flow velocity of the gas discharged from the opening through the branch path can be increased, so that the gas can be dispersed so that the dense and dense parts on the entire surface of the target are reduced.

[Additional notes] The present invention is not limited to the above-mentioned embodiments, and various changes can be made within the range indicated in the patent claims. Embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in this document. within the technical scope of the invention.

1: Sputtering device 2: Vacuum container 3. 320: upper surface 4: Vacuum exhaust device 6: Gas source 8: Flow regulator 10: gas 12: Substrate 14: Substrate holder 16: Substrate bias power supply 20: Antenna 22: Plasma 24: High frequency power supply 26: integrated circuit 30: target 30a: target configuration position 32: Target holder (holding part) 34: Target bias power supply 40, 41, 43: insulation part 46: Control device 50: Gas introduction piping 51: Gas introduction part 52: Gas path (main path) 53: Gas branch path (gas path, branch path) 54: Gas outlet (opening) 55: Exhaust port (exhaust part) 61, 610: Magnetic field strength adjustment plate (magnetic adjustment member) 61a, 61c, 61d, 61e: gaps 61b: long hole 62: Magnetic path bolt (fixed member) 63: The first magnetic plate (magnetic member) 64:Magnet holder 65: magnet 66: Second magnetic plate (magnetic component) 67: The third magnetic plate (magnetic component) 71: electrode 72: anode 81: cooling water port 82: Cooling water path 321: target subject 322: Backplane 421: insulating bushing 422: The first insulation board 423: Second insulation board 501: Gas insulated piping 521: Gas path cover 522: Orifice 611, 612, 613: magnetic field plate (magnetic adjustment member) 1201, 1202: symbols L, L1, L2, L3: Length Pr: high frequency power Vs: Substrate bias voltage Vt: target bias voltage

FIG. 1 is a diagram showing an example of the overall configuration of a sputtering apparatus according to Embodiment 1. FIG. 2 is a view taken along the line A-A in FIG. 1 of the target holder according to Embodiment 1, and is a plan view in a state where the target holder is assembled. 3 is a view taken along the line B-B in FIG. 1 of the target holder according to Embodiment 1, and is a bottom view in a state where the target holder is assembled. FIG. 4 is a view taken along the line C-C in FIG. 1 of the target holder according to Embodiment 1. FIG. 5 is a D-D arrow view in FIG. 1 of the target holder according to Embodiment 1. FIG. FIG. 6 is a view taken along the line E-E in FIG. 1 of the target holder according to Embodiment 1. FIG. 7 is a cross-sectional view of the target holder according to Embodiment 1 taken along line F-F in FIG. 2 . FIG. 8 is a G-G cross-sectional view of the target holder in FIG. 2 according to Embodiment 1. FIG. FIG. 9 is an enlarged view of part H in FIG. 2 . 10 is a cross-sectional view showing a detailed structure inside a vacuum vessel according to Embodiment 2. FIG. Fig. 11 is a view taken along the line I-I in Fig. 10 of the target holder according to Embodiment 2, and is a bottom view of the state where the target holder is assembled. FIG. 12 is a schematic diagram of a magnetic field intensity adjustment plate according to Embodiments 1 and 3. FIG.

1: Sputtering device

2: Vacuum container

3. 320: upper surface

4: Vacuum exhaust device

6: Gas source

8: Flow regulator

10: gas

12: Substrate

14: Substrate holder

16: Substrate bias power supply

20: Antenna

22: Plasma

24: High frequency power supply

26: integrated circuit

30: target

32: Target holder (holding part)

34: Target bias power supply

40, 41, 43: insulation part

46: Control device

50: Gas introduction piping

51: Gas introduction part

501: Gas insulated piping

Pr: high frequency power

Vs: Substrate bias voltage

Vt: target bias voltage

Claims (11)

A sputtering device for sputtering a target in a vacuum container to form a film on a substrate, and in the sputtering device, the vacuum container includes at least one holding portion holding the target, The holding part includes: a gas introduction part for introducing gas into the holding part; and A pair of openings are provided at positions facing each other across at least a part of the periphery of the target placement position when the target placement position where the target is placed in the holding portion is viewed from a vertically downward direction. position, and release the gas introduced into the holding part into the vacuum container. The sputtering device as claimed in item 1, wherein, The shape of the target arrangement position when viewed from the vertically downward direction is a rectangular shape, The opening is provided over the entirety of opposing sides of the target arrangement position. The sputtering device as claimed in claim 1 or claim 2, wherein, The opening is provided over the entire length of the opposing long sides of the target arrangement position. The sputtering device according to any one of claim 1 to claim 3, wherein, The holding part includes a magnet and a magnetic member magnetized by the magnet, The magnet and the magnetic member form a magnetic circuit, and the magnetic circuit forms a magnetic field at the position where the target is arranged, forming a gap in part of the magnetic circuit, A part of the magnetic circuit in which the gap is formed is provided outside the vacuum container. The sputtering device according to claim 4, wherein the holding part includes an adjustment mechanism for adjusting the width of the gap. The sputtering device as claimed in item 5, wherein, The adjustment mechanism includes a pair of magnetic adjustment members provided as a part of the magnetic member on an upper surface portion of the holding portion and defining the gap, At least one magnetic adjustment member of the pair of magnetic adjustment members is formed with a long hole penetrating through a fixing member that is a part of the magnetic member and fixes the magnetic adjustment member to the holding portion, and extending along the width direction of the void, The penetration position of the fixing member in the long hole can be changed. The sputtering device as claimed in claim 6, wherein, The shape of the target arrangement position when viewed from the vertically downward direction is a rectangular shape, The pair of magnetic adjustment members are provided extending along the length direction of the target arrangement position, At least one magnetic adjustment member of the pair of magnetic adjustment members is divided into a plurality of partitions along the length direction, The width of the gap is specified by specifying the penetration position of the fixing member in the elongated hole for each of the plurality of partitions. The sputtering apparatus according to any one of claim 4 to claim 7, wherein a substance having a magnetic permeability different from that of the magnetic member is inserted into the gap. The sputtering device according to any one of claim 1 to claim 8, comprising a plurality of holding parts. The sputtering device according to any one of claim 1 to claim 9, wherein the vacuum container includes at least one exhaust part for vacuum exhausting the inside of the vacuum container, The exhaust portion is provided adjacent to the holding portion. The sputtering device according to any one of claim 1 to claim 10, wherein, The holding portion includes a gas path that communicates the gas introduction portion with the opening portion, The gas path includes: a main path for receiving the gas introduced from the gas introduction part; and a plurality of branch paths communicated with the main path, leading the gas in the main path to the opening, A thickness of each of the plurality of branch paths is smaller than a thickness of the main path.

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