KR20230142608A - sputtering device - Google Patents

Abstract

Supply gas over the entire surface of the target. The vacuum vessel 2 of the sputtering device 1 is provided with at least one target holder 32 holding a target 30 . The target holder has a gas introduction portion 51 for introducing the gas 10, and a pair of gas discharge ports 54 for discharging the gas into the vacuum container, which are formed at opposing positions in at least part of the periphery of the target.

Description

sputtering device

The present invention relates to sputtering devices.

Various sputtering devices have been proposed conventionally. An example of a sputtering device is a magnetron sputtering device. In the magnetron sputtering device, a magnetic field is formed on the surface of the target by a magnet installed on the back of the target, and after turning the gas in the magnetic field into plasma, the ions of the plasmaized gas collide with the target. When ions collide with the target, sputtered particles are ejected from the target, and the particles form a film on a substrate placed opposite the target.

In a sputtering device, it is known that the density of the gas on the target causes unevenness in the thickness of the thin film formed on the substrate. An example of a technique for suppressing the occurrence of this unevenness is disclosed in Patent Document 1. In the sputtering device of Patent Document 1, two targets are installed as a set in a chamber into which sputter gas is introduced. In addition, the sputtering device of Patent Document 1 is provided with a gas inlet port for introducing a reactive gas from both sides of a set of targets and an exhaust port for exhausting the reactive gas from between the sets of targets.

Japanese Patent Publication No. 2013-49884

However, in the sputtering device of Patent Document 1, in one target among a set of targets, a gas inlet is formed on one long side of the target, and an exhaust port is formed on the long side opposite to one long side of the target. Therefore, there was a possibility that the supply amount of the reactive gas to the target may become uneven in the direction perpendicular to the two long sides of the target (width direction of the target). Therefore, there was a possibility that unevenness occurred in the amount of sputtered particles sticking out across the entire surface of the target. As a result, there was a possibility that unevenness may occur in the film thickness of the thin film formed on the substrate.

Therefore, one embodiment of the present invention aims at realizing a sputtering device capable of supplying gas over the entire surface of a target.

In order to solve the above problem, a sputtering device according to one embodiment of the present invention is a sputtering device that sputters a target in a vacuum container to form a film on a substrate, wherein the vacuum container has at least one holding portion that holds the target, , the holding portion includes a gas introduction portion that introduces gas into the holding portion, and a target disposition position where the target is disposed in the holding portion when viewed from a vertically downward direction. It is formed at an opposing position with an arrangement position in between, and has a pair of openings which discharge the gas introduced into the holding part into the vacuum container.

According to one embodiment of the present invention, gas can be supplied over the entire surface of the target.

1 is a diagram showing an overall configuration example of a sputtering device according to Embodiment 1.
Fig. 2 is a view taken along the line AA in Fig. 1 of the target holder according to Embodiment 1, and is a top view of the target holder in an assembled state.
Fig. 3 is a view taken along the BB arrow in Fig. 1 of the target holder according to Embodiment 1, and is a bottom view of the target holder in an assembled state.
FIG. 4 is a view taken along the arrow CC in FIG. 1 of the target holder according to Embodiment 1.
FIG. 5 is a view taken along the DD arrow in FIG. 1 of the target holder according to Embodiment 1.
FIG. 6 is a view taken along the EE arrow in FIG. 1 of the target holder according to Embodiment 1.
FIG. 7 is a cross-sectional view taken along FF in FIG. 2 of the target holder according to Embodiment 1.
Fig. 8 is a cross-sectional view taken along line GG in Fig. 2 of the target holder according to Embodiment 1.
FIG. 9 is an enlarged view of portion H in FIG. 2 of the target holder according to Embodiment 1.
Fig. 10 is a cross-sectional view showing the detailed structure within the vacuum container according to Embodiment 2.
Fig. 11 is an I-I arrow view of the target holder according to Embodiment 2 in Fig. 10, and is a bottom view of the target holder in an assembled state.
Fig. 12 is a schematic diagram of the magnetic field intensity adjustment plate according to Embodiments 1 and 3.

[Embodiment 1]

Hereinafter, an embodiment of the present invention will be described in detail using FIGS. 1 to 9.

<Overall configuration of sputtering device>

First, the overall structure of the sputtering device 1 according to this embodiment will be described using FIG. 1. 1 is a diagram showing an overall configuration example of the sputtering device 1 according to Embodiment 1.

As shown in FIG. 1, the sputtering device 1 is a device that forms a film on a substrate 12 by sputtering a target 30 in a vacuum container 2 into which sputtering gas 10 is introduced.

Specifically, the sputtering device 1 is equipped with a vacuum container 2 that is evacuated by a vacuum exhaust device 4. The vacuum container 2 is electrically grounded, and the gas 10 for sputtering is introduced into it. The gas 10 is supplied to the target holder 32 from the gas source 6 through the gas introduction pipe 50 and the gas introduction unit 51, with the flow rate adjusted by the flow rate controller 8. Then, the gas 10 is introduced into the vacuum container 2 through the target holder 32. An insulating portion 43 is provided between the gas introduction portion 51 and the upper surface portion 3 of the vacuum container 2 and between the gas introduction portion 51 and the target holder 32. The gas 10 is, for example, argon gas. When performing reactive sputtering, the gas 10 may be a mixed gas of argon gas and an active gas (for example, oxygen gas, nitrogen gas, etc.). Active gas is also called reactive gas.

A substrate holder 14 holding the substrate 12 is installed in the vacuum container 2. In this embodiment, the sputtering device 1 is provided with a substrate bias power supply 16. The substrate bias power supply 16 applies a substrate bias voltage (Vs) to the substrate holder 14. The substrate bias voltage (Vs) may be a negative direct current voltage, a negative pulse voltage, or an alternating current voltage. Additionally, the substrate holder 14 may be electrically grounded when the substrate bias voltage Vs is not applied to the substrate 12. Additionally, symbol 40 is an insulating portion with a vacuum seal function. In addition, the substrate 12 is a processing object on which a thin film is formed by sputtered particles emitted from the target 30. As the substrate 12, a glass substrate, a semiconductor substrate, etc. are used, but it is not limited to this.

Additionally, a target holder (holding portion) 32 that holds the target 30 at a position opposite to the substrate holder 14 is installed on the upper surface portion 3 of the vacuum container 2. In Figure 1, three target holders 32 are provided on the upper surface 3. However, the number of target holders 32 is not limited, and at least one target holder 32 may be provided on the upper surface portion 3. The target 30 is held at a position opposite the substrate 12 inside the vacuum container 2 by the target holder 32 . The planar shape of the target 30 is, for example, a rectangular shape, but is not limited to this and may be a circular shape or the like.

The material of the target 30 may be one that matches the film formed on the substrate 12. As an example, when forming an oxide semiconductor thin film on the substrate 12, the target 30 is, for example, In-Ga-Zn-O (indium-gallium-zinc-oxygen) or In-Sn-Zn It is an oxide semiconductor composed of -O (indium-tin-zinc-oxygen). However, the material of the target 30 is not limited to this.

A target bias power supply 34 is connected to the target 30 through a target holder 32. The target bias power supply 34 supplies (applies) a target bias voltage (Vt) to the target 30. The target bias voltage (Vt) is a voltage that causes ions (meaning positive ions in this application) in the plasma 22 to flow into the target 30 and sputter, for example, a negative direct current voltage or alternating current voltage. When the target bias voltage (Vt) is an alternating voltage, the alternating voltage may be a high-frequency voltage on the order of MHz, such as 13.56 MHz, for example. Alternatively, the target bias voltage Vt may be a low-frequency voltage with a lower frequency (for example, about 10 kHz to 100 kHz) than the output of the high-frequency power supply 24 (for example, 13.56 MHz). If the target bias voltage (Vt) is set to a low-frequency voltage, it becomes easy to avoid interference with the plasma generation operation using the high-frequency power supply 24.

Additionally, an antenna 20 is disposed inside the vacuum container 2. In this embodiment, four antennas 20 are arranged to face each other so as to sandwich the target 30 held on the target holder 32 from both sides.

A high-frequency power source 24 is connected to each antenna 20 through a matching circuit 26. Specifically, the matching circuit 26 is connected to one end of each antenna 20, and the other end of each antenna 20 is electrically grounded. One end of the high-frequency power supply 24 is also electrically grounded. Additionally, symbol 41 is an insulating portion with a vacuum seal function. Additionally, a high-frequency power source 24 and a matching circuit 26 may be installed for each antenna 20, respectively.

The high-frequency power source 24 supplies high-frequency power (Pr) to each antenna 20. Specifically, high frequency power (Pr) is supplied in parallel to each antenna 20, thereby generating an inductively coupled plasma 22 near the surface of the target 30. The frequency of the high-frequency power Pr output from the high-frequency power source 24 is, for example, a general 13.56 MHz, but is not limited to this.

Additionally, the sputtering device 1 is equipped with a control device 46. The control device 46 collectively controls each part of the sputtering device 1. In particular, the control device 46 controls power supply from the high frequency power supply 24 and the target bias power supply 34. Additionally, the control device 46 controls the flow rate regulator 8 to control the flow rate of the gas 10 introduced into the vacuum container 2.

In addition, the gas introduction pipe 50, the gas insulating pipe 501, and the gas introduction portion 51 connected to the flow rate regulator 8 are installed in each of the target holders 32, but are omitted in Figure 1. there is. In addition, the high-frequency power source 24 is connected to each antenna 20 through a matching circuit 26, but the illustration is omitted in FIG. 1. Additionally, the target bias power supply 34 is connected to the target 30 held in each of the target holders 32, but is omitted from illustration in FIG. 1.

<Configuration near the upper surface of the vacuum container>

Next, the specific configuration of the vicinity of the upper surface portion 3 of the vacuum container 2 will be described in detail using FIG. 1. In the vicinity of the upper surface 3, mainly

·An antenna 20 that generates plasma 22 near the surface of the target 30,

·Target holder (32) holding the target (30)

is installed.

(antenna)

As shown in FIG. 1, the antenna 20 is disposed near the target holder 32 inside the vacuum container 2 (specifically, near the surface of the target 30 held on the target holder 32). It is done. In this embodiment, as shown in FIG. 1, the plurality of antennas 20 are positioned on the sides of the target 30 having a rectangular shape, for example, to sandwich the target 30 held in the target holder 32 from both sides. It is arranged to follow.

By arranging the plurality of antennas 20 in this way, it becomes possible to generate the plasma 22 so as to face the entire surface of the target 30. This makes it possible to sputter the entire surface of the target 30, thereby improving the utilization efficiency of the target 30. However, if this point is not taken into consideration, for example, one antenna 20 may be arranged along one side of the target 30.

Additionally, each antenna 20 is connected to a matching circuit 26. Each antenna 20 may be a solid structure or a hollow structure (e.g., tubular or cylindrical). In the case of a hollow structure, a water cooling structure may be used in which a cooling water channel is installed inside the hollow structure and each antenna 20 is cooled by flowing cooling water. Additionally, each antenna 20 may have a structure in which a condenser is inserted in the middle of the antenna conductor.

Additionally, the shape of the antenna 20 is not limited to the above-mentioned shape, and may be entirely rod-shaped, U-shaped, C-shaped, or coil-shaped. Additionally, the shape of the antenna 20 may be shaped according to the planar shape of the target 30. For example, when the planar shape of the target 30 is circular, the planar shape of the antenna 20 may be circular.

Additionally, the antenna 20 has a structure in which the antenna conductor is housed inside an insulating member, regardless of its structure or shape.

The structure or shape of the antenna 20 described above is only an example, and the antenna 20 may have a structure or shape capable of generating the plasma 22.

Additionally, high frequency power (Pr) is supplied to the antenna 20 independently of the supply of the target bias voltage (Vt) to the target 30. Specifically, the control device 46 (see FIG. 1) supplies a target bias power 34 that supplies a target bias voltage (Vt) to the target 30 and a high frequency power (Pr) to the antenna 20. The high-frequency power source 24 is controlled independently.

(Configuration of target holder)

The target holder 32 includes a structural member that defines the structure of the target holder 32, a gas member that introduces the gas 10 near the target 30, and a magnetic field that forms a magnetic field near the surface of the target 30. It is composed of circuit members. Additionally, the target holder 32 is comprised of an electrode member that applies voltage to the target holder 32, an insulating member for insulating the electrode member, and a cooling member that cools the target holder 32.

Each member of the target holder 32 described above will be described using FIGS. 2 to 8. FIG. 2 is a view taken along the line A-A in FIG. 1 of the target holder 32 according to Embodiment 1, and is a top view of the target holder 32 in an assembled state. FIG. 3 is a B-B arrow view of the target holder 32 according to Embodiment 1 in FIG. 1, and is a bottom view of the target holder 32 in an assembled state. FIG. 4 is a view taken along the line C-C in FIG. 1 of the target holder 32 according to Embodiment 1. FIG. 5 is a view taken along the line D-D in FIG. 1 of the target holder 32 according to Embodiment 1. FIG. 6 is a view taken along the E-E arrows in FIG. 1 of the target holder 32 according to Embodiment 1. FIG. 7 is a cross-sectional view taken along line F-F of FIG. 2 of the target holder 32 according to Embodiment 1. FIG. 8 is a cross-sectional view taken along the line G-G in FIG. 2 of the target holder 32 according to Embodiment 1.

In addition, in FIG. 3, the target 30 held in the target holder 32 is omitted for convenience of explanation.

(Structural member of target holder)

First, the target holder 32 is a structural member and includes a target body 321 and a backing plate 322, for example, as shown in FIGS. 7 and 8.

The target body 321 is a member that defines various members of the target holder 32. The target body 321 is formed with grooves and holes for defining various members, or grooves and holes for assembling various members. The functions and configurations of various members will be described later.

The backing plate 322 is a plate to which the target 30 is attached. On the surface of the backing plate 322 on the side opposite to the substrate holder 14, the position where the target 30 is attached (placed) is called the target placement position 30a (see also FIGS. 3 and 6). . The backing plate 322 is disposed below the target body 321. A part of the gas member (for example, the gas discharge port 54) is formed on the backing plate 322.

The shape (planar shape) of the target body 321 and the backing plate 322 when viewed from the vertical downward direction may be designed to match the shape of the target 30 to be attached. For example, if the planar shape of the attached target 30 is rectangular, the planar shapes of the target body 321 and the backing plate 322 may be designed to be rectangular.

When the planar shape of the target body 321 and the backing plate 322 is rectangular, the corner portions of the target body 321 and the backing plate 322 may be chamfered. In this embodiment, the planar shape of the target body 321 and the backing plate 322 is a rectangular shape, but the corner portions of the target body 321 and the backing plate 322 are R-shaped. This shape is designed to overcome processing limitations of the upper surface 3 where the target body 321 and the backing plate 322 are installed, and the risk of abnormal discharge occurring at the edge portions of the target body 321 and the backing plate 322. It is due to reasons such as reduction. However, if this point is not taken into consideration, the planar shape of the target body 321 and the backing plate 322 may be a rectangular shape without chamfered corners.

In addition, in this specification, when the planar shape of the target body 321, the planar shape of the backing plate 322 (the planar shape of the target placement position 30a), and the planar shape of the target 30 are expressed as rectangular shapes, It should be noted that it has the following two meanings. That is, in this specification, the rectangular shape includes (i) a shape in which the corners are not chamfered (a rectangular shape in the normal sense) as well as (ii) a shape in which the corners of the rectangle are chamfered.

In this embodiment, the longitudinal direction of the target body 321 and the backing plate 322 is extended in the Y-axis direction (for example, the depth direction of the paper in FIGS. 7 and 8). That is, for example, as shown in FIG. 3, the longitudinal direction (long side) of the target arrangement position 30a is extended in the Y-axis direction. The target 30 is attached to the backing plate 322 so that the longitudinal direction (long side) of the target 30 is stretched in the Y-axis direction.

(Absence of gas in target holder)

As shown in FIG. 7, the gas member of the target holder 32 includes a gas introduction pipe 50, a gas insulating pipe 501, a gas introduction portion 51, a gas path (main path) 52, and It is provided with a gas path lid 521, an orifice 522, a gas branch path (branch path) 53, and a gas discharge port (opening) 54.

The gas introduction pipe 50 is a path (pipe) that introduces the gas 10 supplied from the gas source 6 into the target holder 32, and is connected between the gas source 6 and the gas introduction portion 51. (See also Figure 1). Additionally, as shown in FIG. 1, a flow rate regulator 8 is installed in the middle of the gas introduction pipe 50. Additionally, the gas insulating pipe 501 is a pipe for insulating the gas introduction pipe 50 and the gas introduction portion 51.

The gas introduction portion 51 is a path for introducing gas 10 into the target holder 32 formed in the target body 321, and is in communication with the gas introduction pipe 50 and the gas path 52. One gas introduction portion 51 is provided for each target holder 32. As shown in FIG. 2, the gas introduction portion 51 is installed at the end of each target holder 32.

The gas path 52 is a path that receives the gas 10 introduced from the gas introduction portion 51 formed in the target body 321 and flows to the gas branch path 53, and the gas introduction portion 51 and the gas branch path ( 53). In this embodiment, the gas path 52 is on the upper surface side of the target body 321 and is provided near the center in the width direction (X-axis direction) of the target body 321 when viewed from vertically downward, This is a path formed by stretching the target body 321 in the longitudinal direction (see FIG. 6). The gas 10 introduced from the gas introduction unit 51 is distributed in the longitudinal direction of the target body 321 by the gas path 52.

The gas path lid 521 is a lid of the gas path 52. The gas path lid 521 can reduce the possibility of the gas 10 leaking out of places other than the gas introduction portion 51 and the gas branch path 53 (see FIG. 5). Additionally, the gas path lid 521 is provided with an orifice 522 that allows the gas 10 from the gas introduction portion 51 to flow into the gas path 52. By installing the orifice 522 on the gas path lid 521, the gas pressure in the upstream part can be made higher than that of the orifice 522.

Here, the gas introduction portion 51 has a vacuum seal function because the flange portion of the gas introduction portion 51 is press-fitted by the insulating portion 43. Additionally, the gas introduction portion 51 is electrically connected to the gas path lid 521 and is at the same potential as the target bias voltage (Vt). Additionally, the gas introduction pipe 50 and the gas introduction portion 51 are insulated by a gas insulating pipe 501. For this reason, the gas 10 is determined by the high-frequency potential generated in the gas introduction pipe 50 and the gas introduction part 51 and the pressure of the gas 10 in the gas introduction pipe 50 and the gas introduction part 51. ), discharge may occur. To prevent such discharge from occurring, the length of the gas introduction pipe 50 is defined and an orifice 522 is installed on the gas path lid 521.

The gas branch path 53 is a path for introducing the gas 10 introduced from the gas path 52 formed in the target body 321 into the gas outlet 54, and the gas path 52 and the gas outlet ( 54). In this embodiment, a plurality of gas branch paths 53 are formed at opposing positions across the gas path 52 in the width direction (X-axis direction) of the target body 321 (see Fig. 6).

Specifically, as shown in FIG. 6, one end of the gas branch path 53 is gas on each of both sides of the gas path 52 extending along the longitudinal direction (Y-axis direction) of the gas path 52. It is connected to the path 52. In addition, the other end of the gas branch path 53 is the lower surface of the target body 321, and is located at a position opposite to the target arrangement position 30a in the width direction of the target body 321 (a gas discharge port ( 54).

The gas outlet 54 is an opening formed in the backing plate 322 that discharges the gas 10 introduced from the gas branch path 53 into the interior of the vacuum container 2, and is in communication with the gas branch path 53. It is done. In this embodiment, a plurality of gas discharge ports 54 are provided over the entire opposing long side of the target arrangement position 30a when viewed from the vertically downward direction (see Fig. 6). In addition, in this embodiment, the plurality of gas discharge ports 54 are provided approximately equally on each long side of the target arrangement position 30a, and the gas discharge ports 54 provided on each long side are formed to face each other. there is. Therefore, the gas 10 introduced from the gas introduction portion 51 is approximately spread over the entire surface of the target 30 from both long sides of the target 30 with respect to the target 30 attached to the target placement position 30a. It is supplied evenly. Therefore, compared to the case where the gas 10 is supplied from one side of the target 30, the gas 10 can be supplied approximately uniformly to the entire surface of the target 30.

In addition, the arrangement position and number of the gas discharge ports 54 are not limited to the above, and are adjusted so that the gas 10 released from the gas discharge ports 54 is supplied approximately uniformly to the entire surface of the target 30. good night.

For example, the gas discharge port 54 may be formed along both short sides of the target placement position 30a, or may be formed on each of the long and short sides of the target placement position 30a. However, it is easier to supply the gas 10 approximately uniformly to the entire surface of the target 30 when it is formed on the long side of the target arrangement position 30a.

Additionally, it is not necessarily necessary for the pair of gas discharge ports 54 to be formed to face each other. For example, the number of gas discharge ports 54 may be different on opposite sides of the target placement position 30a. Additionally, the sizes of each opening of the gas discharge port 54 may be different. Additionally, one gas discharge port 54 may be formed along the side of the target 30.

That is, the gas discharge port 54 extends over at least a portion of the periphery of the target placement position 30a and between the target placement position 30a so that the gas 10 is supplied approximately uniformly to the entire surface of the target 30. It is good if they are formed in opposite positions.

Here, the thickness (cross-sectional area in the YZ cross section) of the gas branch path 53 is smaller than the thickness (cross-sectional area in the XZ cross section) of the gas path 52 (see FIGS. 6 and 7). Therefore, the gas 10 flowing through the gas branch path 53 is less likely to flow than the gas 10 flowing through the gas path 52. Accordingly, the pressure of the gas 10 in the gas path 52 can be increased, and as a result, the pressure can be equalized throughout the gas path 52. Therefore, the gas 10 can be supplied to each gas branch path 53 approximately equally. Additionally, the flow rate of the gas 10 introduced into the target holder 32 is adjusted to be constant. Therefore, by making the thickness of the gas branch path 53 smaller than the thickness of the gas path 52 and also making the thickness of the gas outlet 54 smaller than the thickness of the gas branch path 53, the gas outlet 54 ) can increase the flow rate of the gas 10 emitted from. Therefore, the gas 10 can be dispersed so that there are fewer dense parts over the entire surface of the target 30.

(electrode member and insulating member of target holder)

As shown in FIGS. 2 and 3, the target holder 32 includes an electrode 71 and an anode 72 as electrode members. Additionally, as shown in FIG. 8, the insulating member of the target holder 32 includes an insulating bush 421, a first insulating plate 422, and a second insulating plate 423.

The electrode 71 is an electrode that inputs the target bias voltage (Vt) to the target holder 32. As for the electrode 71, one electrode 71 is provided for each target holder 32. As shown in FIG. 2, the electrode 71 is installed adjacent to the gas introduction portion 51 at the end of each target holder 32. The target body 321, the backing plate 322, and the target 30 are charged to the target bias voltage (Vt) through the electrode 71.

The insulating bush 421 is a bush that insulates the bolts that secure the target body 321 to the upper surface portion 3. In this embodiment, a plurality of insulating bushes 421 are installed at opposing positions along the longitudinal direction (Y-axis direction) of the target holder 32 with the magnetic field intensity adjustment plate 61 sandwiched between them (see Fig. 2). ).

The first insulating plate 422 is an insulating member installed on a plane parallel to the plane where the target 30 is installed between the upper surface portion 3 and the target body 321. Specifically, the first insulating plate 422 is installed between the gas path lid 521 and the first magnetic plate 63.

The second insulating plate 423 is an insulating member installed between the upper surface portion 3 and the target body 321 on a plane perpendicular to the plane where the target 30 is installed. The second insulating plate 423 is installed to surround four corners of the target body 321.

The insulating bush 421, the first insulating plate 422, and the second insulating plate 423, which are insulating members, electrically ground the target body 321 and the backing plate 322 charged with the target bias voltage (Vt). It has the function of insulating from the vacuum container (2) and the upper surface portion (3).

The anode 72 generates electrons (secondary electrons) generated by collisions of ions with the target 30 in the vicinity of the target 30 along with a parallel magnetic field formed between the ends of the third magnetic plate 67, which will be described later. ) is an electrode for capturing. As a result, the density of plasma 22 near the target 30 can be increased. Additionally, the anode 72 is electrically grounded.

Since the secondary electrons from the target 30 are captured by the parallel magnetic field, the possibility of secondary electrons being incident on the surface of the substrate 12 can be reduced. Therefore, the possibility that the temperature of the substrate 12 will rise can be reduced. Additionally, by setting the magnetic field strength of the parallel magnetic field to be small, secondary electrons are annihilated without cyclotron movement even if they are not captured by the parallel magnetic field. Secondary electrons are annihilated, for example, by incident on the surrounding wall or by recombination in space. Therefore, the influence of secondary electrons on increasing the density of the plasma 22 near the surface of the substrate 12 can be reduced.

In this embodiment, the anode 72 is installed near the target placement position 30a, as shown in FIGS. 3 and 8, and has an annular shape similar to the outer edge of the target placement position 30a. has In this embodiment, the anode 72 is installed to cover the gas discharge port 54 and the outer edge of the target 30 disposed at the target placement position 30a. Additionally, the anode 72 is installed on the target holder 32 so as to have a gap with the outer edge of the target 30. Therefore, the gas 10 released from the gas discharge port 54 can diffuse from the gap toward the target 30. Additionally, the anode 72 prevents the third magnetic plate 67, which will be described later, from contacting the plasma 22. Therefore, by the third magnetic plate 67 coming into contact with the plasma 22, the risk of impurities occurring inside the vacuum container 2 can be reduced.

(about magnetic circuit)

Here, before explaining the magnetic circuit member of the target holder 32, the magnetic circuit will be explained. A magnetic circuit is a circuit that generates a magnetic field consisting of a magnet and a magnetic member magnetized by the magnet.

A magnet is a substance that generates a magnetic field by magnetomotive force and flows magnetic flux to the outside of the magnet. A magnetic member is a member that passes magnetic flux generated by a magnet. Examples of magnetic members include ferromagnetic materials with high magnetic permeability such as yoke and iron.

An air gap, which is a gap, may be formed in the magnetic circuit. An air gap may be formed between two magnetic members forming a magnetic circuit. A material (for example, air) whose permeability is smaller than that of the magnetic member is inserted into the void. Therefore, the magnetoresistance in the gap is greater than the magnetoresistance in the magnetic member. Therefore, by adjusting the width of the gap (interval between two magnetic members) formed in the magnetic circuit, the magnetic resistance of the entire magnetic circuit can be changed.

(absence of magnetic circuit in target holder)

As shown in FIG. 8, the magnetic circuit member of the target holder 32 is a member that forms the above-described magnetic circuit, and includes a magnet 65 and a magnetic member. The magnetic members include a magnetic field intensity adjustment plate (magnetic adjustment member) 61, a magnetic path bolt (fixing member) 62, a first magnetic plate 63, a magnet holding portion 64, and a second magnetic member. It is provided with a plate 66 and a third magnetic plate 67.

The magnetic field intensity adjustment plate 61 is a magnetic member installed on the upper surface portion 3 (that is, the upper surface portion 320 of the target holder 32) exposed to the outside atmosphere of the vacuum container 2. The magnetic field intensity adjustment plate 61 is a pair of magnetic members extending in the longitudinal direction of the target holder 32 (see Fig. 2). And, a gap 61a is formed between the pair of magnetic field intensity adjustment plates 61. That is, the gap 61a is defined by the magnetic field intensity adjustment plate 61. In addition, a plurality of long holes 61b are formed in the magnetic field intensity adjustment plate 61, which penetrate the magnetic path bolt 62 and extend in the width direction (X-axis direction) of the gap 61a (Fig. 2 and Figure 9). FIG. 9 is an enlarged view of portion H in FIG. 2.

The magnetic path bolts 62 are magnetic members that secure each of the magnetic field intensity adjustment plates 61 to the target holder 32. Specifically, by passing the magnetic path bolt 62 through the long hole 61b of the magnetic field intensity adjustment plate 61 and fixing it to the first magnetic plate 63, the magnetic field intensity adjustment plate 61 is connected to the target holder 32. Fix it to

The length of the long hole 61b in the width direction (X-axis direction) is larger than the axial diameter of the magnetic path bolt 62. Therefore, the penetration position of the magnetic path bolt 62 in the long hole 61b is variable. That is, the fixed position of the magnetic field intensity adjustment plate 61 with respect to the target holder 32 can be changed by the length of the long hole 61b in the width direction. Therefore, the width of the gap 61a can be adjusted by adjusting the fixed position of the magnetic field intensity adjustment plate 61. In this way, the magnetic field intensity adjustment plate 61 and the magnetic path bolt 62 function as an adjustment mechanism for adjusting the width of the gap 61a.

Additionally, in this embodiment, long holes 61b are formed on both sides of the magnetic field intensity adjustment plate 61, but the present invention is not limited to this. For example, the long hole 61b may be formed only in one magnetic field intensity adjustment plate 61, and the other magnetic field intensity adjustment plate 61 may be fixed to the upper surface portion 3. Even in this case, the position of one magnetic field intensity adjustment plate 61 with respect to the other magnetic field intensity adjustment plate 61 can be changed, so the width of the gap 61a can be adjusted.

The first magnetic plate 63 is a pair of magnetic members extending in the longitudinal direction of the target holder 32 (see FIG. 4). The first magnetic plate 63 is fixed between the first insulating plate 422 and the upper surface portion 3 so as to correspond to two magnetic field intensity adjustment plates 61, respectively.

The magnet holding portion 64 is a pair of magnetic members that hold the magnet 65. The magnet holding portion 64 extends in the longitudinal direction of the target holder 32, and is capable of holding a plurality of magnets 65 in each magnet holding portion 64 (see Fig. 4). The magnet holding portions 64 are installed at positions opposite to and close to each of the first magnetic plates 63. Additionally, the magnet holding portion 64 and the first magnetic plate 63 may be in contact with each other. That is, a portion holding the magnet 65 may be provided in a portion of the first magnetic plate 63.

The magnet 65 is a member that has magnetic strength (electromagnetic force) that can magnetize the magnetic member. As the magnet 65, for example, a semi-permanent magnet is used, and in this case, a desired magnetic circuit can be formed inexpensively and easily. As the magnet 65, magnets of different magnetic poles are used in one magnet holding portion 64 and the other magnet holding portion 64. For example, one magnet holding part 64 holds the N-pole magnet 65, and the other magnet holding part 64 holds the S-pole magnet 65.

The second magnetic plate 66 is a pair of magnetic members provided in contact with each of the magnet holding portions 64, and is extended in the longitudinal direction of the target holder 32 (see Fig. 5). The second magnetic plate 66 is fixed between the second insulating plate 423 and the upper surface portion 3, respectively. Additionally, if a magnetic circuit can be formed, the second magnetic plate 66 may be installed in a position isolated from the magnet holding portion 64.

The third magnetic plate 67 is a pair of magnetic members provided in contact with each of the second magnetic plates 66, and is extended in the longitudinal direction of the target holder 32. The third magnetic plate 67 is fixed between the anode 72 and the second magnetic plate 66 by a fixing member (e.g. bolt) that secures the anode 72 to the second magnetic plate 66. (See Figure 8). Additionally, the third magnetic plate 67 is disposed at a position opposing the target 30 disposed at the target arrangement position 30a when viewed from a vertically downward direction. That is, the third magnetic plate 67 is installed to cover the gas discharge port 54 together with the anode 72.

As described above, the magnetic field intensity adjustment plate 61, the magnetic path bolt 62, the first magnetic plate 63, the magnet holding portion 64, the magnet 65, and the second magnetic plate 66 ) and the third magnetic plate 67, one magnetic circuit is formed. That is, the magnetomotive force of the magnet 65 appears at the ends of each third magnetic plate 67, and a parallel magnetic field is formed between the ends of the third magnetic plates 67.

(No cooling of target holder)

As shown in FIGS. 2, 3, and 7, the cooling member of the target holder 32 is a member that cools the target 30 with water and includes a cooling water port 81 and a cooling water path 82.

The cooling water port 81 cools the target holder 32 by supplying and draining cooling water to the target holder 32. As shown in FIG. 2, a cooling water port 81 is provided for each target holder 32. The cooling water port 81 is installed at an end of each target holder 32 opposite to the end where the gas introduction portion 51 is installed. As the coolant, a refrigerant other than water may be used.

The coolant path 82 is a U-shaped groove formed along the longitudinal direction of the target body 321 on the lower surface of the target body 321 (see FIGS. 3 and 7). The cooling member cools the target holder 32 by causing coolant supplied from the water supply port of the cooling water port 81 to flow in a U shape and draining the coolant from the drain port of the cooling water port 81.

<Measures for uniform film thickness distribution>

In order to equalize the film thickness distribution of the thin film formed on the substrate 12,

· Equalization of the distribution (pressure distribution) of the gas 10 on the surface of the target 30

· Uniform distribution of gas 10 between targets 30

· Parallel magnetic field formation area on the surface of the target 30

This becomes an important factor. Each is explained and its measures are explained in detail.

(Distribution of gas on the surface of the target)

In this embodiment, the sputtering device 1 releases gas 10 into the vacuum container 2 from a plurality of gas discharge ports 54 formed in the longitudinal direction of the target holder 32 with the target placement position 30a in between. Sputtering is performed by emitting the substance into the inside. As described above, the anode 72 has a gap between the targets 30 and is installed to cover the outer edge of the target 30. That is, the anode 72 is installed below the target 30 so as to protrude toward the target 30 . Therefore, the gas 10 released from the gas discharge port 54 is discharged toward the surface of the target 30 toward the protruding direction of the anode 72, that is, toward the central region of the target 30. Therefore, the sputtering device 1 can distribute the gas 10 over the entire surface of the target 30.

In addition, the flow rate controller 8 adjusts the flow rate of the gas 10, so that the gas 10 can be distributed at a substantially uniform concentration over the entire surface of the target 30. Therefore, the sputtered particles can be released from the target 30 substantially uniformly, and the film thickness of the thin film formed on the substrate 12 can be made substantially uniform. That is, the film thickness distribution of the substrate 12 can be made uniform.

(Distribution of gas between targets)

In this embodiment, a plurality of target holders 32 are installed to form a film on a large substrate. Each target holder 32 has a plurality of gas discharge ports 54 formed as described above. Therefore, in each target holder 32, the gas 10 discharged from the gas discharge port 54 is supplied over the entire surface of the target 30. In addition, the total flow rate supplied to each gas introduction part 51 is adjusted by the flow rate regulator 8, and each gas introduction part 51 is maintained so that the gas 10 flows approximately evenly in each gas introduction part 51. Piping lines such as these are designed. Therefore, in each target holder 32, the amount of gas 10 emitted from the gas discharge port 54 can be equalized. Therefore, since the distribution of the gas 10 in each target holder 32 can be made uniform, the film thickness distribution of the substrate 12 facing each target holder 32 can be made uniform. Additionally, a flow rate regulator 8 may be individually installed in each target holder 32. Even in this case, the flow rate of the gas 10 flowing through each gas introduction portion 51 can be equalized.

In addition, in this embodiment, the sputtering device 1 discharges the gas 10 to the target 30 from a position proximate to the target 30 on both long sides of the target 30. Therefore, the distance between the targets 30 is shorter than that of a configuration that introduces the reactive gas from both sides of a set of targets 30 and exhausts the reactive gas from between the sets of targets 30 (e.g., the sputtering device of Patent Document 1). can be shortened. That is, the pitch between the target holders 32 can be made small. Therefore, since the area of the substrate 12 that does not face the target 30 can be reduced, the film thickness distribution of the substrate 12 can be made more uniform.

Additionally, in this embodiment, one vacuum exhaust device 4 is installed in the vacuum container 2. Additionally, the vacuum exhaust device 4 is installed in a different position from the substrate holder 14 installed in the central portion of the bottom of the vacuum container 2. Therefore, the distance between each target holder 32 and the vacuum exhaust device 4 is different. As a result, the speed of vacuum evacuation at the placement position of each target holder 32 is different.

In consideration of this point, in order to further equalize the distribution of the gas 10 to each target 30, for example, a flow rate regulator 8 may be installed for each target holder 32. As a result, the flow rate of the gas 10 can be adjusted according to the vacuum evacuation speed at the placement position of each target holder 32. Therefore, the distribution of the gas 10 for each target 30 can be made uniform regardless of the arrangement position of the vacuum exhaust device 4, and as a result, the film thickness distribution of the substrate 12 can be made uniform.

Alternatively, a plurality of vacuum pipes connected to the vacuum exhaust device 4 may be arranged in positions symmetrical to the group of target holders 32. For example, the vacuum pipes are two opposing side walls of the vacuum container 2, and may be installed on two side walls extending along the longitudinal direction of the target holder 32. Additionally, for example, the vacuum pipe may be installed at the bottom of the vacuum container 2 near each of the two side walls. In this case, since the difference in the speed of vacuum exhaust at the arrangement position of each target holder 32 can be reduced, the distribution of the gas 10 for each target 30 can be made uniform. Additionally, the same effect can be obtained by the configuration of Embodiment 2 described later.

(Effect due to magnetic circuit)

As shown in FIG. 8, a pair of third magnetic plates 67 are disposed near the target 30, and magnetic poles are formed on each of the pair of third magnetic plates 67. Therefore, it is possible to form a magnetic field distribution (parallel magnetic field) having a component of magnetic force lines substantially parallel to the surface at least at a position opposite the entire surface of the target 30. Therefore, electrons (secondary electrons) generated by ion collisions with the target 30 can be efficiently captured.

Additionally, by forming a parallel magnetic field at a position opposite to the entire surface of the target 30, it becomes possible to capture electrons uniformly over the entire surface of the target 30. By arranging the plurality of antennas 20 as described above, it is possible to generate the plasma 22 so as to face the entire surface of the target 30. However, even in this case, there is a possibility that the density of the plasma 22 may be localized on the surface of the target 30. By capturing electrons by forming the parallel magnetic field, localization of the density of the plasma 22 can be suppressed. Therefore, it becomes possible to uniformly sputter the entire surface of the target 30. Therefore, the film thickness distribution of the substrate 12 can be made uniform.

Electrons protrude from the target 30 over a wide area. For this reason, as the magnetic pole formed on the third magnetic plate 67 moves away from the surface of the target 30, the probability of capturing the electrons (capture rate, yield) decreases, and the configuration of the sputtering device 1 increases. . By installing the third magnetic plate 67 near the target 30, the electron yield can be improved and the sputtering device 1 can be miniaturized when the third magnetic plate 67 is installed.

Additionally, the magnetic field intensity (magnetic flux density) formed by the magnetic circuit is less than the intensity at which magnetron discharge occurs. Since the sputtering device 1 generates plasma 22 using the antenna 20, there is no need to generate a high-intensity magnetic field that generates magnetron discharge.

(Adjustment of magnetic field by magnetic circuit)

Additionally, the intensity of the parallel magnetic field is adjusted by the magnetic intensity of the magnet 65 and the width of the gap 61a formed between the pair of magnetic field intensity adjustment plates 61. As described above, the magnetic field intensity adjustment plate 61 is formed with a long hole 61b extending in the width direction of the magnetic field intensity adjustment plate 61. Therefore, in the range of the long hole 61b, the width of the gap 61a can be adjusted by changing the fixing position of the magnetic field intensity adjustment plate 61 by the magnetic path bolt 62. Therefore, since the magnetic resistance in the gap 61a can be adjusted, the magnetic resistance of the magnetic circuit can be adjusted. Therefore, since the strength of the parallel magnetic field can be adjusted, electrons can be captured uniformly over the entire surface of the target 30. Additionally, the width of the gap 61a may be adjusted to a width sufficient to form a parallel magnetic field with an intensity sufficient to capture electrons uniformly over the entire surface of the target 30.

Additionally, in this embodiment, the width of the gap 61a can be adjusted for each target holder 32. Therefore, in each target holder 32, electrons can be captured uniformly over the entire surface of the target 30.

Additionally, a material (air in this embodiment) having a magnetic permeability different from that of the magnetic member is inserted into the gap 61a. Therefore, by forming the gap 61a in the magnetic circuit, it is possible to form a magnetic circuit having a different magnetic resistance from a magnetic circuit formed only with a magnet and a magnetic member.

Additionally, since the permeability of air is smaller than that of the magnetic member, the gap 61a has a large magnetic resistance. Therefore, as the width of the gap 61a increases, the intensity of the parallel magnetic field decreases and the intensity distribution worsens. If the intensity distribution of the parallel magnetic field deteriorates, the parallel magnetic field cannot be formed on the entire surface of the target 30, and there is a possibility that uneven capture of electrons may occur. Therefore, the width of the gap 61a is set to a width that can form a parallel magnetic field at a position opposite the entire surface of the target 30, taking into account the permeability of the material (here, air) filling the gap 61a. do.

(Miniaturization of sputtering device)

In this embodiment, a magnetic circuit and a gas discharge port 54 are formed inside the target holder 32. In addition, as the gas outlet 54 is formed inside the target holder 32, the gas path 52 and the gas branch path 53 are also installed inside the target holder 32. Therefore, since there is no need to construct a path for the gas 10 between the target holders 32, a plurality of target holders 32 are attached to the upper surface 3 so that the plurality of target holders 32 are adjacent to each other. can do. Therefore, the sputtering device 1 can be miniaturized. Additionally, by miniaturizing the sputtering device 1, the area of the substrate 12 that does not face the target 30 can be reduced. Therefore, the film thickness distribution of the substrate 12 can be made more uniform.

(summary)

As described above, the distribution of the gas 10 on the surface of the target 30 can be made uniform by the arrangement position of the gas discharge port 54 described above. That is, the gas 10 can be supplied uniformly over the entire surface of the target 30 by the above arrangement position. Therefore, the film thickness distribution of the substrate 12 can be made uniform. Additionally, by adjusting the width of the gap 61a described above, the strength of the parallel magnetic field can be adjusted so that electrons can be captured uniformly over the entire surface of the target 30. Even with this adjustment, the film thickness distribution of the substrate 12 can be made uniform.

In addition, in order to adjust the film thickness distribution of the substrate 12, the flow rate of the gas 10 is adjusted by the flow rate controller 8, and the arrangement position of the magnetic field intensity adjustment plate 61 is adjusted (adjustment of the air gap 61a). ) can be performed outside the vacuum container (2). Therefore, the film thickness distribution of the substrate 12 can be easily adjusted without opening the vacuum container 2.

[Embodiment 2]

Hereinafter, separate embodiments will be described in detail using FIGS. 10 and 11. In addition, for convenience of explanation, members having the same function as those described in the above embodiment are given the same reference numerals, and their descriptions are not repeated.

In Embodiment 1, the gas 10 was intensively exhausted by one vacuum exhaust device 4, but in Embodiment 2, the sputtering device 1 is further provided with a plurality of exhaust ports (exhaust portions) 55. . Fig. 10 is a cross-sectional view showing the detailed structure within the vacuum container 2 according to Embodiment 2. Fig. 11 is a view taken along H-H in Fig. 10 of the target holder 32 according to Embodiment 2, and is a bottom view of the target holder 32 in an assembled state.

As shown in FIG. 10, the exhaust port 55 is connected to a vacuum exhaust device that evacuates the inside of the vacuum container 2, and is an exhaust port that exhausts the gas 10 released from the gas discharge port 54. The exhaust port 55 is formed at a position adjacent to the target holder 32 in the upper surface portion 3. In this embodiment, it is formed between a plurality of target holders 32. As shown in FIG. 11, a plurality of exhaust ports 55 are formed along the longitudinal direction of the target holder 32.

In this way, by providing the exhaust port 55 near the target holder 32, the gas 10 discharged from the gas discharge port 54 generates an airflow flowing toward the exhaust port 55. By generating this airflow, the distribution of the gas 10 over the entire surface of the target 30 can be made more uniform. Additionally, since the exhaust port 55 is formed between the plurality of target holders 32, the airflow generated in each target holder 32 tends to be uniform. Therefore, it becomes easy to equalize the distribution of the gas 10 in each target 30, and as a result, the film thickness distribution of the substrate 12 can be equalized.

Additionally, the exhaust port 55 may be formed along the width direction of the target holder 32 at a position adjacent to the target holder 32. In other words, the exhaust port 55 may be formed at least partially around the target holder 32. When the exhaust port 55 is formed along the longitudinal direction of the target holder 32, the distribution of the gas 10 over the entire surface of the target 30 can be more uniform. Additionally, the exhaust port 55 may be a single opening formed along the longitudinal or width direction of the target holder 32.

Additionally, only one target holder 32 may be installed inside the vacuum container 2. In this case as well, by forming the exhaust port 55 as described above at a position adjacent to the target holder 32, the distribution of the gas 10 over the entire surface of the target 30 can be made more uniform. That is, by forming the exhaust port 55 near one target holder 32, the distribution of the gas 10 over the entire surface of the target 30 can be made more uniform.

Additionally, in this embodiment, the vacuum exhaust device 4 does not need to be installed directly on the vacuum container 2. Additionally, during sputtering, the vacuum exhaust device 4 may be stopped and exhaust air may be discharged only through the exhaust port 55. In these configurations, the gas 10 is exhausted only from the exhaust port 55 without using the vacuum exhaust device 4. Therefore, since the unevenness of the exhaust velocity of the gas 10 in each target holder 32 can be reduced, the distribution of the gas 10 in each target 30 can be made more uniform. In addition, a flow rate regulator 8 is installed corresponding to each target holder 32, and the gas 10 from each target 30 does not need to be adjusted with high precision by each flow rate controller 8. ) distribution can be made more uniform.

[Embodiment 3]

Hereinafter, separate embodiments will be described in detail using FIG. 12. In addition, for convenience of explanation, members having the same function as those described in the above embodiment are given the same reference numerals, and their descriptions are not repeated.

Fig. 12 is a schematic diagram of the magnetic field intensity adjustment plate 61 according to Embodiment 1 and the magnetic field intensity adjustment plate 610 according to Embodiment 3. In FIG. 12 , a magnetic field intensity adjustment plate 61 is indicated at 1201, and a magnetic field intensity adjustment plate 610 is indicated at 1202. In Embodiment 1, the pair of magnetic field intensity adjustment plates 61 each consists of one plate. Therefore, the gap 61a formed between the magnetic field intensity adjustment plates 61 has a uniform width (length L) in the longitudinal direction of the magnetic field intensity adjustment plate 61. On the other hand, in Embodiment 3, the pair of magnetic field intensity adjustment plates 610 (magnetic adjustment members) are each divided into a plurality of sections in the longitudinal direction of the magnetic field intensity adjustment plate 610.

Specifically, the pair of magnetic field intensity adjustment plates 610 is a magnetic field plate group comprised of a plurality of pairs of magnetic field plates. As shown in FIG. 12, in the present embodiment, the pair of magnetic field intensity adjustment plates 610 includes three pairs of magnetic field plates 611, 612, and 613 in the longitudinal direction of the magnetic field intensity adjustment plate 610. has The width and length of the gap 61c formed by the first set of magnetic field plates 611 is L1. The length of the width of the gap 61d formed by the second set of magnetic field plates 612 is L2. The width and length of the gap 61e formed by the third set of magnetic field plates 613 is L3. The magnetic field plates 611, 612, and 613 are arranged in this order and placed on the upper surface portion 320 of the target holder 32.

Like the magnetic field intensity adjustment plate 61, the magnetic field plates 611, 612, and 613 are formed with long holes (not shown in FIG. 12) extending in the width direction of the magnetic field intensity adjustment plate 610. This allows the lengths L1, L2, and L3 of each width of the gaps 61c, 61d, and 61e to be defined. That is, by adjusting the lengths L1, L2, and L3, the intensity of the parallel magnetic field can be adjusted according to the position in the longitudinal direction of the target 30. Since the unevenness of the intensity of the parallel magnetic field in the longitudinal direction of the target 30 can be easily reduced, a large effect can be expected, especially when the target 30 is long.

Here, generally, in the longitudinal direction of the target 30, the closer to the end area of the target 30, the weaker the strength of the parallel magnetic field tends to be. Therefore, for example, as shown in FIG. 12, the widths 61c and 61e of the gaps corresponding to both end regions of the target 30 are larger than the width of the gap 61d corresponding to the central region of the target 30. Make it narrow (L1≒L3<L2). As a result, the magnetic field intensity in the gaps 61c and 61e can be made stronger than the magnetic field intensity in the gap 61d.

However, the widths 61c, 61d, and 61e may be adjusted so that the intensity of the parallel magnetic field is uniform across the entire surface of the target 30. For example, the lengths L1, L2, and L3 may be different depending on the arrangement of the target 30, etc.

Additionally, the magnetic field intensity adjustment plate 610 does not necessarily need to be divided into three sections of the magnetic field plates 611, 612, and 613, and may be divided into any number of sections. Additionally, since each of the pair of magnetic field intensity adjustment plates 61 is curved, the length of the width 61a may be different at each position in the longitudinal direction of the magnetic field intensity adjustment plate 61. For example, the shape of the magnetic field intensity adjustment plate 61 may be defined so that the width 61a is maximized at the longitudinal center portion of the magnetic field intensity adjustment plate 61.

Additionally, in this embodiment, both sides of the magnetic field intensity adjustment plate 610 are divided into a plurality of sections, but the present invention is not limited to this. For example, only one magnetic field intensity adjustment plate 610 may be divided into a plurality of sections. In this case as well, the width of each position in the longitudinal direction of the magnetic field intensity adjustment plate 610 can be adjusted individually.

[Variation 1]

In Embodiment 1, air is inserted into the gap 61a as a material having a magnetic permeability different from that of the magnetic member. In this modification, a material having a permeability different from air may be inserted into the gap 61a. By this, the magnetoresistance of the magnetic circuit can be adjusted, and as a result, the strength of the parallel magnetic field can be adjusted. For example, when carbon steel ( ^{magnetic permeability: 1.26×10 - 4 μH /} m), which has a magnetic permeability of about 100 times that of air (1.26 Magnetic resistance becomes 1/100. Therefore, the strength of the parallel magnetic field can be increased. In addition, a material with lower magnetic permeability than the magnetic member, such as non-magnetic metal (eg, aluminum) or engineering plastic (eg, PEEK (PolyEtherethErKetone)), may be inserted into the gap 61a.

In addition, the magnetic field intensity adjustment plate 61 may not be composed of a pair of magnetic members, but may be composed of a single plate (for example, a plate made of PEEK) without an air gap. In this case, the magnetic resistance of the magnetic circuit can be changed by replacing the magnetic field intensity adjustment plate 61 with a separate magnetic field intensity adjustment plate 61 having a magnetic permeability different from that of the magnetic field intensity adjustment plate 61.

[Variation 2]

In Embodiment 1, a pair of magnets 65 are installed inside the upper surface portion 3, but the position where the magnets 65 are installed is not limited to this position. For example, instead of the magnetic field intensity adjustment plate 61, one magnet having an N pole and an S pole may be disposed on the surface of the upper surface portion 3. Alternatively, an N-pole magnet and an S-pole magnet may be disposed on the surface of the upper surface portion 3. In this case, the strength of the parallel magnetic field can be adjusted by replacing the magnet.

[Variation Example 3]

In the above-described embodiment, ionization is performed by plasma 22 generated by the antenna 20, but the present invention is not limited to this. For example, there may be no antenna 20, and a parallel magnetic field with a strength greater than that at which magnetron discharge occurs may be formed by a magnetic circuit.

[organize]

A sputtering device according to one aspect of the present invention is a sputtering device that forms a film on a substrate by sputtering a target in a vacuum container, wherein the vacuum container has at least one holding portion that holds the target, and the holding portion includes the holding portion. a gas introduction part for introducing gas into the holding part, and a target arrangement position where the target is arranged in the holding part, extending over at least a part of the periphery of the target arrangement position when viewed from a vertical downward direction, and facing each other across the target arrangement position. It is formed at a position and has a pair of openings for discharging the gas introduced into the holding portion into the vacuum container.

According to the above configuration, gas can be supplied from around the target to the entire surface of the target at approximately uniform pressure. Therefore, the unevenness of gas distribution over the entire surface of the target can be reduced. Therefore, it is possible to reduce the possibility that non-uniformity in the film thickness of the thin film formed on the substrate will occur.

In the sputtering device according to one embodiment of the present invention, the shape of the target placement position when viewed from the vertically downward direction is rectangular, and the opening may be formed over the entire side of the target placement position.

According to the above configuration, gas can be supplied more uniformly over the entire surface of the target.

In the sputtering device according to one embodiment of the present invention, the opening may be formed over the entire long side opposite the target placement position.

According to the above configuration, gas can be supplied uniformly over the entire surface of the target.

In the sputtering device according to one aspect of the present invention, the holding portion is provided with a magnet and a magnetic member magnetized by the magnet, and the magnet and the magnetic member form a magnetic circuit that forms a magnetic field on the target arrangement position. , an air gap may be formed in a part of the magnetic circuit, and the part of the magnetic circuit in which the air gap is formed may be installed outside the vacuum container.

According to the above configuration, the magnetic resistance of the magnetic circuit can be adjusted without opening the vacuum container by the air gap formed on the outside of the vacuum container.

In the sputtering device according to one embodiment of the present invention, the holding portion may be provided with an adjustment mechanism for adjusting the width of the gap.

According to the above configuration, the magnetic resistance of the magnetic circuit can be adjusted by adjusting the width of the gap.

In the sputtering device according to one aspect of the present invention, the adjustment mechanism is installed on the upper surface of the holding portion as a part of the magnetic member, and includes a pair of magnetic adjustment members defining the gap, and the pair of magnetic adjustment members. In at least one of the self-adjusting members among the adjusting members, a long hole is formed as a part of the magnetic member, which passes through a fixing member for fixing the self-adjusting member to the holding part and extends in the width direction of the gap, and the long hole is formed in at least one of the self-adjusting members. The penetration position of the fixing member may be variable.

According to the above configuration, the width of the gap can be changed by changing the penetration position of the long hole in the self-adjusting member.

In the sputtering device according to one aspect of the present invention, the shape of the target placement position when viewed from the vertical downward direction is a rectangular shape, and the pair of self-adjusting members are installed to extend in the longitudinal direction of the target placement position, , at least one self-adjusting member of the pair of self-adjusting members is divided into a plurality of divisions along the longitudinal direction, and a penetration position of the fixing member in the elongated hole is defined for each of the plurality of divisions. The width of the above-mentioned gap may be defined.

According to the above configuration, it is possible to specify a different width of the gap for each section. Therefore, the magnetic resistance of the magnetic circuit can be adjusted in the longitudinal direction of the target placement position.

In the sputtering device according to one embodiment of the present invention, a material having a magnetic permeability different from that of the magnetic member may be inserted into the gap.

According to the above configuration, the magnetic resistance of the magnetic circuit can be adjusted by inserting a material with a different magnetic permeability from that of the magnetic member into the gap.

In the sputtering device according to one embodiment of the present invention, a plurality of the holding parts may be provided.

According to the above configuration, film formation can be performed on a larger substrate using a plurality of targets.

In the sputtering device according to one embodiment of the present invention, the vacuum vessel is provided with a plurality of exhaust parts that evacuate the interior of the vacuum vessel, and the exhaust parts may be formed adjacent to the holding part.

According to the above configuration, the distribution of gas over the entire surface of the target can be made more uniform.

In the sputtering device according to one aspect of the present invention, the holding portion is provided with a gas path communicating with the gas introduction portion and the opening, the gas path comprising a main path for receiving gas introduced from the gas introduction portion, and the main path and a plurality of branch paths that communicate with and introduce gas in the main path into the opening, and each of the plurality of branch paths may have a thickness smaller than that of the main path.

According to the above configuration, the flow rate of the gas discharged from the opening via the branch path can be increased, so the gas can be dispersed so that the dense portions are reduced over the entire surface of the target.

[Additional notes]

The present invention is not limited to the above-described embodiments, and various changes are possible within the scope indicated in the claims, and embodiments obtained by appropriately combining the technical means disclosed in the other embodiments are also included in the technical scope of the present invention. do.

1: Sputtering device
2: Vacuum container
3, 320: upper surface
12: substrate
30: Target
32: Target holder (maintenance part)
51: Gas inlet
52: Gas path (main path)
53: Gas branch path (gas path, branch path)
54: Gas outlet (opening)
55: exhaust port (exhaust part)
61, 610: Magnetic field intensity adjustment plate (magnetic adjustment member)
61a, 61c, 61d, 61e: void
61b: Janggong
62: Magnetic path bolt (fixing member)
63: First magnetic plate (magnetic member)
65: magnet
66: Second magnetic plate (magnetic member)
67: Third magnetic plate (magnetic member)
611, 612, 613: magnetic field plate (self-adjusting member)

Claims (11)

A sputtering device for forming a film on a substrate by sputtering a target in a vacuum container,
The vacuum container has at least one holding portion that holds the target,
The maintenance part,
a gas introduction unit for introducing gas into the holding unit;
The holding portion is formed over at least a portion of the periphery of the target disposition position when the target disposition position at which the target is disposed is viewed from a vertical downward direction, and is formed at a position facing the target disposition position with the target disposition position in between, and the holding portion is provided. A sputtering device having a pair of openings for releasing the gas introduced therein into the vacuum container. According to claim 1,
The shape of the target placement position when viewed from the vertical downward direction is a rectangular shape,
A sputtering device in which the opening is formed over the entire side of the target placement position. The method of claim 1 or 2,
A sputtering device in which the opening is formed over the entire long side opposite the target placement position. The method according to any one of claims 1 to 3,
The holding portion includes a magnet and a magnetic member magnetized by the magnet,
The magnet and the magnetic member form a magnetic circuit that forms a magnetic field on the target placement location,
An air gap is formed in a portion of the magnetic circuit,
A sputtering device in which a part of the magnetic circuit in which the gap is formed is installed outside the vacuum container. According to claim 4,
A sputtering device wherein the holding part is provided with an adjustment mechanism for adjusting the width of the gap. According to claim 5,
The adjustment mechanism is installed on the upper surface of the holding portion as a part of the magnetic member and includes a pair of magnetic adjustment members defining the gap,
In at least one self-adjusting member of the pair of self-adjusting members, a long hole is formed as a part of the magnetic member, penetrating a fixing member for fixing the self-adjusting member to the holding unit, and extending in the width direction of the gap. It is done,
A sputtering device in which the penetration position of the fixing member in the long hole is variable. According to claim 6,
The shape of the target placement position when viewed from the vertical downward direction is a rectangular shape,
The pair of self-adjusting members are installed and extended in the longitudinal direction of the target placement position,
At least one self-adjusting member of the pair of self-adjusting members is divided into a plurality of sections along the longitudinal direction,
A sputtering device in which the width of the gap is defined by defining a penetration position of the fixing member in the long hole for each of the plurality of sections. According to any one of claims 4 to 7,
A sputtering device in which a material having a magnetic permeability different from that of the magnetic member is inserted into the gap. The method according to any one of claims 1 to 8,
A sputtering device comprising a plurality of the holding parts. The method according to any one of claims 1 to 9,
The vacuum container has at least one exhaust unit that evacuates the interior of the vacuum container,
A sputtering device in which the exhaust unit is installed adjacent to the holding unit. The method according to any one of claims 1 to 10,
The holding portion has a gas path communicating with the gas introduction portion and the opening portion,
The gas path is,
a main path for receiving gas introduced from the gas introduction portion;
A plurality of branch paths communicate with the main path and introduce gas in the main path into the opening,
A sputtering device in which each thickness of the plurality of branch paths is smaller than the thickness of the main path.