JP2008128887A - Plasma source, high frequency ion source using it, negative ion source, ion beam processor, neutral particle beam incident device for nuclear fusion - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce plasma loss on the inner surface of a discharge tube. <P>SOLUTION: The discharge tube 5 constituted by insulator and a coil 3 arranged around the discharge tube 5 are provided. By applying high frequency to the coil 3, plasma is generated in the discharge tube 5. A Faraday shield 4 as a conductor is installed between the discharge tube 5 and coil 3, and has a plurality of slits 4S. A plurality of permanent magnets 6 are installed between the plurality of slits and outside the Faraday shield 4, and generate a multipole field B in the discharge tube 5. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a plasma source, a high-frequency ion source using the same, a negative ion source, an ion beam processing apparatus, and a neutral particle beam injection apparatus for nuclear fusion.

  As a conventional plasma source, for example, the one shown in Non-Patent Document 1 is known as one using high-frequency discharge.

Review of Scientific Insturments, vol. 69 (1998), pp.956

  However, the conventional plasma source using high frequency discharge has a problem that plasma loss occurs on the inner wall of the discharge tube. This plasma loss causes the following problems. (1) Plasma generation efficiency (generated plasma density / high frequency power) is low. (2) The non-uniformity of the plasma density in the discharge tube is large, and the beam uniformity of the ion source is reduced. (3) The gas pressure required for discharge is high. (4) It is difficult to ignite the discharge. When the Faraday shield 4 is removed, the high-frequency electric field directly enters the inside of the discharge tube and the discharge is easily ignited. However, since ions in the plasma are accelerated by the high-frequency voltage of the coil, the energy of the ions increases, Problems arise such that the wall is damaged by the impact of ions, metal is sputtered from the metal surface in contact with the plasma, and the metal film adheres to the inner wall of the discharge tube, making it difficult to supply high-frequency power into the discharge tube.

  An object of the present invention is to provide a plasma source that can reduce plasma loss on the inner surface of a discharge tube, a high-frequency ion source, a negative ion source, an ion beam processing apparatus, and a neutral particle beam injection apparatus for fusion. There is.

(1) In order to achieve the above object, the present invention has a discharge vessel composed of an insulator and a coil disposed around the discharge vessel, and a high frequency is applied to the coil to discharge the discharge. In a plasma source that generates plasma in a container, the plasma source is disposed between the discharge container and the coil, and is disposed between the conductor having a plurality of slits and the plurality of slits and outside the conductor. And a magnet for generating a multipolar magnetic field inside the discharge vessel.
With this configuration, plasma loss on the inner surface of the discharge tube can be reduced.

  (2) In the above (1), preferably, a case is provided that is provided around the magnet and is made of a material that shields high frequency.

  (3) In the above (1), preferably, the conductor is installed inside the discharge vessel, and the magnet is installed outside the discharge vessel.

  (4) In the above (3), preferably, a spacer is provided between the conductor and the discharge vessel and adjusts the distance between the two.

(5) In order to achieve the above object, the present invention includes a discharge vessel made of an insulating material and a coil disposed around the discharge vessel, and a high frequency is applied to the coil to discharge the discharge. In a high-frequency ion source having a plasma source for generating plasma in a vessel and an electrode for extracting ions generated from the plasma source as an ion beam, the plasma source is installed between the discharge vessel and the coil A conductor having a plurality of slits and a magnet that is installed between the plurality of slits and outside the conductor and generates a multipolar magnetic field inside the discharge vessel is provided.
With this configuration, plasma loss on the inner surface of the discharge tube can be reduced, and the ion beam generation efficiency can be improved.

(6) In order to achieve the above object, the present invention includes a discharge vessel made of an insulating material and a coil disposed around the discharge vessel, and a high frequency is applied to the coil to discharge the discharge. A plasma source for generating plasma in the vessel, an electrode for extracting ions generated from the plasma source as an ion beam, and an electrode-side end portion for extracting the ion beam of the discharge vessel, which is perpendicular to the axis of the discharge vessel A negative ion source for extracting a negative ion beam, wherein the plasma source is installed between the discharge vessel and the coil, and has a plurality of slits. And a magnet that is installed between the plurality of slits and outside the conductor, and that generates a multipolar magnetic field inside the discharge vessel.
With this configuration, plasma loss on the inner surface of the discharge tube can be reduced, and the ion beam generation efficiency can be improved.

  (7) In the above (6), preferably, a mesh-like partition plate is provided at the end of the discharge vessel on the electrode side from which the ion beam is drawn.

  (8) In order to achieve the above object, the present invention provides an ion source according to (5) or (6) or an ion source according to (7), wherein the sample is irradiated with an ion beam to process the sample. A negative ion source is used.

  (9) In order to achieve the above object, the present invention provides a neutral particle beam injection apparatus for fusion that injects a neutral particle beam into a fusion apparatus, the ion source according to (5) or (6) or ( 7) The negative ion source described is used.

  According to the present invention, plasma loss on the inner surface of the discharge tube can be reduced.

First, the configuration of the high-frequency ion source using the plasma source according to the first embodiment of the present invention will be described with reference to FIGS. 1 and 2.
1 and 2 are cross-sectional views showing the configuration of a high-frequency ion source using a plasma source according to the first embodiment of the present invention. FIG. 1 shows a cross section of the plasma source perpendicular to the central axis of the ion source. FIG. 2 shows a cross section including the central axis of the ion source.

  As shown in FIGS. 1 and 2, the high frequency generated by the high frequency oscillator 1 is applied to a coil 3 installed around a discharge tube 5 (insulating tube made of quartz or ceramic) via a matching unit 2. The A gas (for example, Ar) necessary for discharge is introduced into the discharge tube 5 through the introduction tube 5 after evacuation. The high frequency applied to the coil 3 generates a high frequency discharge inside the discharge tube 5, and the gas introduced into the discharge tube 5 is ionized to generate plasma. The induction current generated by the high frequency current of the coil 3 flows into the plasma inside the discharge tube 5, whereby high frequency power is supplied to the plasma.

  In the example shown in FIG. 2, the number of turns of the coil 3 is 4 turns, but it is appropriately adjusted from 1 turn to 20 turns depending on the dimensions of the discharge tube and the coil, the frequency of the high frequency, and the like. The high frequency is set to an appropriate frequency in the range of several hundred kHz to several tens of MHz depending on the device structure, high frequency matching, and the like.

  Between the discharge tube 5 and the coil 3, a conductor (Faraday shield) 4 provided with a slit 4 </ b> S is installed, and the high-frequency electric field of the coil 3 is reduced from entering the discharge tube 5.

  In the present embodiment, a plurality of permanent magnets 6 are installed between adjacent slits of the Faraday shield 4 and on the outer peripheral side of the Faraday shield 4. The polarities of the adjacent magnets 6 are set in reverse. As a result, a multipolar magnetic field B localized near the wall is generated on the inner surface of the discharge tube 5 as shown in FIG.

  Here, the inner diameter R1 of the discharge tube 5 is, for example, about 50 mm to 500 mm. For example, as shown in FIG. 1, when the number of slits 4S is 16 and the number of permanent magnets 6 is 16, if the inner diameter R1 of the discharge tube 5 is 160 mm, the distance between the centers of adjacent permanent magnets 6 is L1 is about 30 mm. The width W1 of the slit 4S is 1 to 3 mm.

  The magnetic field B formed by the permanent magnet 6 is strong near the inner wall of the discharge tube 5 and decreases as it approaches the center of the discharge tube 5. Assuming that the surface magnetic field strength of the permanent magnet 6 is several KG and the distance L1 between the centers of the adjacent permanent magnets 6 is about 30 mm, the magnetic field B at a position L1 (= 30 mm) away from the inner wall of the discharge tube 5 toward the center. Is about 10G. Since it is difficult to generate plasma at a position where the magnetic field strength is high, the plasma is generated uniformly in a region where the magnetic field B is weak inside the position L1 (= 30 mm) away from the inner wall of the discharge tube 5 toward the center. Is done.

  As described above, by disposing a plurality of permanent magnets on the outer periphery of the discharge tube and forming a multipolar magnetic field inside the discharge tube, plasma loss due to diffusion of plasma to the inner wall of the discharge tube is reduced. be able to. This improves plasma generation efficiency, increases plasma density, and improves plasma uniformity. Further, the gas pressure required for discharge is reduced, the gas flow rate can be reduced, and the exhaust capacity of the vacuum pump can be reduced.

  The permanent magnet 6 is covered with a metal case 7 to prevent the magnet 6 from being heated by a high frequency induction current. Further, in order to prevent the permanent magnet 6 from being heated by the plasma, the Faraday shield 4 is directly or indirectly cooled by a cooling pipe. The case 7 is made of a metal such as copper having good thermal conductivity and conductivity, and is cooled by a cooling pipe as necessary.

  As shown in FIG. 2, the discharge tube 5 is sandwiched and fixed between the flange 8 and the flange 9 and vacuum-sealed in the vicinity of both ends. A shield tube 10 is attached to the outside of the flanges 8 and 9, and the coil is covered with the flanges 8 and 9 and the shield tube 10 to reduce high-frequency leakage around the discharge vessel.

  Moreover, the flange 8 and the flange 9 are water-cooled to prevent heating due to high-frequency induced current. A lid 11 is attached to the flange 8 side surface of the magnet case 7 and the flange 8, and an insulating plate 12 (the material is quartz, ceramic, or the like) is installed therein. The insulating plate 12 suppresses the sputtering of the inner surface of the lid 11 by plasma, and prevents the inner wall of the discharge tube from being contaminated by the sputtered metal particles. In addition, generation of a metal ion beam due to ionization of sputtered particles is suppressed. On the lid 11, a magnet 6B for generating a multipole magnetic field similar to that on the discharge tube is attached. A port 13 for introducing gas into the discharge tube is provided at the center of the lid 11. Three electrodes 14a, 14b, 14c including an electrode 14a in contact with plasma inside the discharge tube 5 are installed, a hole 14e for extracting ions is provided in the electrode, and an extraction voltage is provided between the electrodes 14a and 14c by the acceleration power supply 15a. When a deceleration voltage is applied between the electrode 14b and the electrode 14c by the deceleration power source 15b, ions are electrostatically extracted through the hole 14e, and the ion beam 16 is generated. By providing a plurality of extraction holes 14e in each electrode, a large-area multi-ion beam 16 can be extracted.

  Since the plasma generation efficiency of the plasma source of this embodiment is improved, the ion density can be increased as a high-frequency ion source, and the ion beam current and current density can be increased. Further, by improving the plasma uniformity, the uniformity of a large area beam can be improved as a high-frequency ion source.

  In the above description, the discharge vessel is the cylindrical discharge tube 5 as shown in FIG. 1, but the shape of the discharge vessel may be other shapes such as a rectangle, an ellipse, etc. Is also possible. Further, the number of permanent magnets is not limited to 16, and when the inner diameter R1 of the discharge tube 5 is large, the number can be further increased, for example, 18 or 36.

  According to the present embodiment, the generation efficiency of the high-frequency plasma source, ion source plasma, and beam is improved. Also, plasma density and beam uniformity are improved.

Next, the configuration of the high-frequency ion source using the plasma source according to the second embodiment of the present invention will be described with reference to FIG.
FIG. 3 is a cross-sectional view showing a configuration of a main part of a high-frequency ion source using a plasma source according to the second embodiment of the present invention. FIG. 3 shows a cross section of the plasma source perpendicular to the central axis of the ion source. The cross-sectional configuration including the central axis of the ion source is the same as that shown in FIG.

  In the present embodiment, the width W2 of the slit 4SW of the Faraday shield 4 is wider than the width W1 of the slit 4S shown in FIG. For example, when the width W1 of the slit 4S is 1 to 3 mm, in this embodiment, the width W2 of the slit 4SW is 5 to 20 mm (about 2 to 10 times the thickness of the conductor 4). Thus, by widening the slit, a high-frequency electric field is slightly introduced into the discharge tube 5 to facilitate plasma ignition. On the other hand, since the multipole magnetic field B is formed by the permanent magnet 6, ions (argon ions Ar + in the illustrated example) are deflected and the ions do not approach the slit 4 </ b> SW, so the ions are not accelerated by the high-frequency electric field. In addition, damage to the discharge tube due to ion acceleration and discharge tube contamination due to metal sputtering can be prevented. That is, both plasma ignition can be easily performed and the life of the plasma source can be extended. In addition, it is possible to prevent impurity ions from being mixed into the plasma due to ionization of the metal sputtered particles.

  As described above, according to this embodiment, by widening the slit width of the Faraday shield, plasma ignition is facilitated, ion acceleration of the high-frequency electric field is suppressed, and discharge tube damage and metal adhesion are reduced. The operational stability of the ion source can be improved and the life can be extended.

Next, the configuration of the ion beam processing apparatus using the plasma source according to the first embodiment of the present invention will be described with reference to FIG.
FIG. 4 is a cross-sectional view showing a configuration of an ion beam processing apparatus using the plasma source according to the first embodiment of the present invention. FIG. 4 shows a cross section of the processing apparatus including the central axis of the ion source. 1 and 2 indicate the same parts.

  The illustrated example shows the configuration of an ion beam processing apparatus (milling, etching, etc.) using the ion source shown in FIGS. The large-area multi-ion beam 16 generated by the ion source is applied to the sample 19 installed in the processing chamber 17 and the sample is finely processed. A vacuum exhaust system 18 is installed in the processing chamber 17 to evacuate the processing chamber 17 and the inside of the ion source.

When the ion source of this embodiment is used, the ion beam current and the current density can be increased, and the maintenance cycle can be lengthened, so that the processing throughput (throughput) per unit time can be improved.
Further, the uniformity of processing is improved by improving the uniformity of the beam.
Furthermore, since the maintenance cost of the ion source can be reduced, the processing cost can be reduced.
Furthermore, since a high-current ion beam can be generated stably and a current drop due to discharge tube contamination can be prevented, the reliability of the apparatus can be improved.
Further, there is no problem of contamination of the sample by sputtered particles due to ions or impurity ions.

As specific application objects of micromachining applications, there are many other objects such as magnetic heads of hard disks, micromachining of machine parts, and fine structure formation of semiconductor memories. In addition, an argon ion beam generated by using argon gas is usually used. However, if necessary, gas such as oxygen, fluorine, salt salt, or a compound thereof (CF ₄ or the like) is used. Processing throughput can be improved.

  Although the above describes the application to an ion beam processing apparatus that processes a sample with an ion beam, semiconductor generation, material modification, sterilization, etc. by ion beam processes such as thin film generation, sputtering, ion implantation, etc. The present invention can be similarly applied to an ion beam processing apparatus for processing a sample with an ion beam.

  As described above, according to the present embodiment, the throughput in the ion beam processing apparatus can be improved. In addition, the uniformity of processing and other processes in the processing apparatus can be improved.

Next, the configuration of a high-frequency ion source using a plasma source according to the third embodiment of the present invention will be described with reference to FIG.
FIG. 5 is a cross-sectional view showing a configuration of a main part of a high-frequency ion source using a plasma source according to the third embodiment of the present invention. FIG. 5 shows a cross section of the plasma source perpendicular to the central axis of the ion source. The cross-sectional configuration including the central axis of the ion source is basically the same as that shown in FIG.

  In the present embodiment, the installation positions of the Faraday shield 4 'and the discharge tube 5' are changed with respect to the ion source shown in FIG. That is, the Faraday shield 4 'is installed inside the discharge tube 5'.

  In this case, by cooling the Faraday shield 4 'with water, the thermal load from the plasma can be absorbed by the Faraday shield 4', so that the discharge tube 5 'can be prevented from being heated. For this reason, when the high frequency power is increased and the plasma density is increased, the temperature of the discharge tube 5 ′ does not increase, and the discharge tube 5 ′ is damaged due to thermal distortion or used for a vacuum seal portion of the discharge tube 5 ′. It is possible to prevent the occurrence of problems such as damage to the packing and vacuum leakage.

  In the present embodiment, since the Faraday shield 4 ′ is in contact with the plasma, the surface of the Faraday shield 4 ′ is sputtered by ions to generate metal particles and metal ions, which adhere to the surface of the discharge tube 5 ′. There is a fear. When the slit 4S portion of the Faraday shield 4 'is short-circuited by the deposit on the surface of the discharge tube 5', a high-frequency induction current flows through the Faraday shield 4 ', and high-frequency power is consumed there. High-frequency power is not injected, and plasma generation cannot be maintained. Therefore, in this embodiment, a spacer 4G is inserted between the discharge tube 5 ′ and the Faraday shield 4 ′, and a gap (about 1-2 mm) is provided between the discharge tube 5 ′ and the Faraday shield 4 ′. Prevents short circuit. Further, by appropriately controlling the gap, it is possible to suppress the adhesion of metal to the surface of the discharge tube on the back side of the Faraday shield 4 ′ and prevent a short circuit due to the metal on the surface of the discharge tube.

  According to the present embodiment, the generation efficiency of the high-frequency plasma source, ion source plasma, and beam is improved. Also, plasma density and beam uniformity are improved. Further, the discharge tube can be prevented from being heated.

Next, the configuration of the negative ion source using the plasma source according to the first embodiment of the present invention will be described with reference to FIG.
FIG. 6 is a sectional view showing the configuration of a negative ion source using the plasma source according to the first embodiment of the present invention. FIG. 6 shows a cross section including the central axis of the ion source. Note that the cross-sectional configuration of the plasma source perpendicular to the central axis of the negative ion source of this embodiment is the same as that shown in FIG.

  In the present embodiment, the structure around the discharge tube 5 that generates plasma by high-frequency discharge is the same as that in FIG. A magnetic filter flange 20 with a magnetic filter magnet 21 inserted is installed on the electrode 14a side of the discharge tube to generate a magnetic filter magnetic field Bf. Thereby, high energy electrons in the plasma do not reach the vicinity of the electrode 14a, and a region suitable for generating negative ions having a low electron temperature is formed in the vicinity of the electrode 14a. In this region, low-energy electrons attach to atoms and molecules and negative ions are generated. In addition, negative ions disappear due to collision with high-energy electrons. For this reason, the density of negative ions in the region increases.

  The generated negative ions include three electrodes 14a, 14b, and 14c, an extraction power source 15c that applies an extraction voltage between the electrodes 14a and 14b, and an acceleration that applies an acceleration voltage between the electrodes 14b and 14c. The negative ion beam 16N is generated electrostatically by the power source 15d and the bias power source 15e that applies a bias voltage between the electrode 14a and the magnetic filter flange 20.

  Electrons extracted from the plasma together with the negative ions are deflected by the magnetic field Bf or an electron deflection magnetic field by a magnet (not shown) installed on the electrode 14b and separated from the negative ion beam.

  In the negative ion source of the present embodiment, the ion beam current and the current density can be increased as in the case of the positive ion source, and the maintenance cycle can be increased. Further, since the operating gas pressure can be reduced, the gas pressure between the extraction electrodes is reduced, the disappearance due to the collision of the negative ions being extracted with the gas is reduced, and the generation efficiency of the negative ion beam can be increased.

Next, the configuration of the negative ion source of the second example using the plasma source according to the first embodiment of the present invention will be described with reference to FIG.
FIG. 7 is a cross-sectional view showing the configuration of the negative ion source of the second example using the plasma source according to the first embodiment of the present invention. FIG. 7 shows a cross section including the central axis of the ion source. Note that the cross-sectional configuration of the plasma source perpendicular to the central axis of the negative ion source of this embodiment is the same as that shown in FIG.

  In the present embodiment, in addition to the configuration of FIG. 6, a mesh-like partition plate 22 is provided at the electrode side end of the discharge tube 5 so that the high frequency induction electromagnetic field by the coil does not affect the negative ion generation region in the vicinity of the electrode 14a. Has a high frequency shield. Thereby, the electron acceleration by the high frequency in a negative ion production | generation area | region is suppressed, and the disappearance of the negative ion by the high energy electron accelerated by the high frequency is prevented. Thereby, the efficiency of generating a negative ion beam can be improved.

  In the negative ion source of the present embodiment, the ion beam current and the current density can be increased as in the case of the positive ion source, and the maintenance cycle can be increased. Further, since the operating gas pressure can be reduced, the gas pressure between the extraction electrodes is reduced, the disappearance due to the collision of the negative ions being extracted with the gas is reduced, and the generation efficiency of the negative ion beam can be increased. Furthermore, the efficiency of generating a negative ion beam can be improved.

Next, the configuration of a neutral particle beam apparatus for a fusion apparatus using the negative ion source of the second example using the plasma source according to the first embodiment of the present invention will be described with reference to FIG.
FIG. 8 is a cross-sectional view showing the configuration of a neutral particle beam apparatus for a nuclear fusion apparatus using the negative ion source of the second example using the plasma source according to the first embodiment of the present invention. In addition, the same code | symbol as FIG. 7 has shown the same part.

  In the present embodiment, a negative ion beam of a necessary ion species can be obtained by using the negative ion source shown in FIG. 7 and changing the type of gas introduced into the discharge tube 5. For example, when a negative ion source for a neutral particle beam device for a fusion device is used, a hydrogen, deuterium, or tritium negative ion beam is obtained by introducing hydrogen, deuterium, or tritium gas.

  The negative ion source of the present embodiment is installed in the vacuum container 23 of the neutral particle injection device, and the negative ion beam 16N is neutralized by the neutralization cell 24 and incident on the fusion device 27 from the incident boat 25. The In order to improve the incident efficiency of the beam, the negative ion source electrode is designed so that the negative ion beam is focused toward the focal point 26 in the incident boat 25.

When used in a beam processing apparatus, for example, when fluorine gas or CF ₄ is introduced, a negative ion beam of fluorine or a fluorine compound is generated. In this case, even if the negative ion beam is irradiated to an insulating sample, the sample will not be charged, so the sample will not be damaged due to charging, and there is no need for a neutralizing device on the sample surface. It is. Also, it is possible to generate negative ion beams of many ion species such as generation of an oxygen negative ion beam using oxygen gas and generation of a chlorine negative ion beam using chlorine gas or a compound thereof according to the application application.

It is sectional drawing which shows the structure of the high frequency ion source using the plasma source by the 1st Embodiment of this invention. It is sectional drawing which shows the structure of the high frequency ion source using the plasma source by the 1st Embodiment of this invention. It is sectional drawing which shows the structure of the principal part of the high frequency ion source using the plasma source by the 2nd Embodiment of this invention. It is sectional drawing which shows the structure of the ion beam processing apparatus using the plasma source by the 1st Embodiment of this invention. It is sectional drawing which shows the structure of the principal part of the high frequency ion source using the plasma source by the 3rd Embodiment of this invention. It is sectional drawing which shows the structure of the negative ion source using the plasma source by the 1st Embodiment of this invention. It is sectional drawing which shows the structure of the negative ion source of the 2nd example using the plasma source by the 1st Embodiment of this invention. It is sectional drawing which shows the structure of the neutral particle beam apparatus for nuclear fusion apparatuses using the negative ion source of the 2nd example using the plasma source by the 1st Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... High frequency oscillator 2 ... High frequency matching device 3 ... Coil 4 ... Fareday shield 5 ... Discharge tube 6, 21 ... Permanent magnet 14 ... Electrode 16 ... Ion beam

Claims (9)

In a plasma source that has a discharge vessel composed of an insulator and a coil disposed around the discharge vessel, and generates a plasma in the discharge vessel by applying a high frequency to the coil,
A conductor installed between the discharge vessel and the coil and having a plurality of slits;
A plasma source comprising: a magnet that is installed between the plurality of slits and outside the conductor, and generates a multipolar magnetic field inside the discharge vessel. The plasma source of claim 1, wherein
A plasma source comprising a case made of a material which is provided around the magnet and shields high frequency. The plasma source of claim 1, wherein
The conductor is installed inside the discharge vessel,
The plasma source, wherein the magnet is installed outside the discharge vessel. The plasma source according to claim 3.
A plasma source comprising a spacer provided between the conductor and the discharge vessel and adjusting a distance between the two. A plasma source that has a discharge vessel composed of an insulator and a coil disposed around the discharge vessel, and generates a plasma in the discharge vessel by applying a high frequency to the coil;
In a high-frequency ion source having an electrode for extracting ions generated from the plasma source as an ion beam,
The plasma source is:
A conductor installed between the discharge vessel and the coil and having a plurality of slits;
A high-frequency ion source comprising: a magnet that is installed between the plurality of slits and outside the conductor and generates a multipolar magnetic field inside the discharge vessel. A plasma source that has a discharge vessel composed of an insulator and a coil disposed around the discharge vessel, and generates a plasma in the discharge vessel by applying a high frequency to the coil;
An electrode for extracting ions generated by the plasma source as an ion beam;
In a negative ion source that is provided at an end of the discharge vessel on the electrode side from which an ion beam is extracted and generates a magnetic field in a direction perpendicular to the axis of the discharge vessel, and that extracts a negative ion beam,
The plasma source is:
A conductor installed between the discharge vessel and the coil and having a plurality of slits;
A negative ion source comprising: a magnet that is installed between the plurality of slits and outside the conductor, and that generates a multipolar magnetic field inside the discharge vessel. The negative ion source according to claim 6.
A negative ion source comprising a mesh-like partition plate installed at an end of the discharge vessel on the electrode side from which an ion beam is drawn. In an ion beam processing apparatus that irradiates a sample with an ion beam and processes the sample,
An ion beam processing apparatus using the ion source according to claim 5 or the negative ion source according to claim 6 or 7. In the neutral beam injection device for fusion that injects the neutral particle beam into the fusion device,
A neutral beam injection apparatus for fusion, wherein the ion source according to claim 5 or the negative ion source according to claim 6 or 7 is used.

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