TW202312273A - 氣體供給系統、氣體控制系統、電漿處理裝置及氣體控制方法 - Google Patents

氣體供給系統、氣體控制系統、電漿處理裝置及氣體控制方法 Download PDF

Info

Publication number
TW202312273A
TW202312273A TW111128056A TW111128056A TW202312273A TW 202312273 A TW202312273 A TW 202312273A TW 111128056 A TW111128056 A TW 111128056A TW 111128056 A TW111128056 A TW 111128056A TW 202312273 A TW202312273 A TW 202312273A
Authority
TW
Taiwan
Prior art keywords
gas
valve
exhaust
secondary side
flow path
Prior art date
Application number
TW111128056A
Other languages
English (en)
Chinese (zh)
Inventor
澤地淳
石原田幸太
藥師寺秀明
佐藤好保
森北信也
吉村正太
鶴田俊寛
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202312273A publication Critical patent/TW202312273A/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00—Control of flow
    • G05D7/06—Control of flow characterised by the use of electric means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW111128056A 2021-08-06 2022-07-27 氣體供給系統、氣體控制系統、電漿處理裝置及氣體控制方法 TW202312273A (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2021130368 2021-08-06
JP2021-130368 2021-08-06
JP2021136662 2021-08-24
JP2021-136662 2021-08-24
JP2021178180 2021-10-29
JP2021-178180 2021-10-29

Publications (1)

Publication Number Publication Date
TW202312273A true TW202312273A (zh) 2023-03-16

Family

ID=85155558

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111128056A TW202312273A (zh) 2021-08-06 2022-07-27 氣體供給系統、氣體控制系統、電漿處理裝置及氣體控制方法

Country Status (3)

Country Link
KR (1) KR20240039163A (ja)
TW (1) TW202312273A (ja)
WO (1) WO2023013423A1 (ja)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3908625B2 (ja) * 2002-07-30 2007-04-25 東京エレクトロン株式会社 基板処理装置
JP6516666B2 (ja) 2015-04-08 2019-05-22 東京エレクトロン株式会社 ガス供給制御方法
JP6748586B2 (ja) * 2016-07-11 2020-09-02 東京エレクトロン株式会社 ガス供給システム、基板処理システム及びガス供給方法
JP7296699B2 (ja) * 2018-07-02 2023-06-23 東京エレクトロン株式会社 ガス供給システム、プラズマ処理装置およびガス供給システムの制御方法

Also Published As

Publication number Publication date
KR20240039163A (ko) 2024-03-26
WO2023013423A1 (ja) 2023-02-09

Similar Documents

Publication Publication Date Title
US20150053346A1 (en) Plasma processing apparatus and plasma processing method
US20150118858A1 (en) Etching method for substrate to be processed and plasma-etching device
KR102521089B1 (ko) Finfet 디바이스들을 형성하기 위한 초고 선택적 나이트라이드 에칭
US11742188B2 (en) Substrate processing method, pressure control apparatus and substrate processing system
US10607819B2 (en) Cleaning method and processing apparatus
US20180166257A1 (en) Method for supplying gas, and plasma processing apparatus
TWI721196B (zh) 用以蝕刻複合三維結構之壓力排淨蝕刻方法
TWI536449B (zh) 蝕刻氣體之供應方法及蝕刻裝置
US10727089B2 (en) Systems and methods for selectively etching film
TW202147925A (zh) 電漿處理裝置及電漿處理方法
TW201907442A (zh) 電漿處理裝置、處理系統及蝕刻多孔質膜之方法
JP2022115719A (ja) プラズマ処理装置及びプラズマ処理方法
TW202312273A (zh) 氣體供給系統、氣體控制系統、電漿處理裝置及氣體控制方法
JP2014003234A (ja) プラズマ処理装置、及びプラズマ処理方法
US20240212987A1 (en) Gas supply system, gas control system, plasma processing apparatus, and gas control method
CN117813677A (zh) 气体供给系统、气体控制系统、等离子体处理装置以及气体控制方法
JP7504004B2 (ja) 基板処理装置及び基板処理方法
JP7433095B2 (ja) 基板処理方法及び基板処理装置
JP2023105636A (ja) ガス供給システム、プラズマ処理装置及びガス供給方法
JP7061981B2 (ja) プラズマエッチング装置およびプラズマエッチング方法
JP7229033B2 (ja) 基板処理方法及び基板処理装置
TW202236406A (zh) 基板處理方法、零件處理方法及基板處理裝置
TW202309972A (zh) 電漿處理裝置及rf系統