WO2023013423A1 - ガス供給システム、ガス制御システム、プラズマ処理装置及びガス制御方法 - Google Patents
ガス供給システム、ガス制御システム、プラズマ処理装置及びガス制御方法 Download PDFInfo
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- WO2023013423A1 WO2023013423A1 PCT/JP2022/028262 JP2022028262W WO2023013423A1 WO 2023013423 A1 WO2023013423 A1 WO 2023013423A1 JP 2022028262 W JP2022028262 W JP 2022028262W WO 2023013423 A1 WO2023013423 A1 WO 2023013423A1
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- G—PHYSICS
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- G05D7/06—Control of flow characterised by the use of electric means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Definitions
- the present disclosure relates to a gas supply system, a gas control system, a plasma processing apparatus, and a gas control method.
- Patent Document 1 discloses a pressure-controlled flowmeter provided in a gas supply line, a first valve provided upstream of the pressure-controlled flowmeter in the gas supply line, and a pressure-controlled flowmeter in the gas supply line.
- a gas supply control method using a second valve provided downstream of the pressure-controlled flowmeter is disclosed.
- the pressure-controlled flowmeter described in Patent Document 1 includes, as an example, a control valve connected to a first valve and a second valve, and an orifice provided between the control valve and the second valve. and have
- the technology according to the present disclosure appropriately exhausts gas from the inside of a flow controller that controls the flow rate of gas supplied into the processing chamber.
- One aspect of the present disclosure is a gas supply system for supplying gas into a processing chamber, comprising: a plurality of gas supply channels configured to be capable of independently supplying gas to the processing chamber; a flow controller arranged in each gas supply channel; a primary valve arranged upstream of the flow controller in the gas supply channel; and the flow controller and the primary in the gas supply channel a primary side gas exhaust passage branched from a side valve and connected to a primary side exhaust mechanism; a primary side exhaust valve arranged in the primary side gas exhaust passage; and the flow rate in the gas supply passage.
- a secondary side valve disposed downstream of the controller, and a secondary side branched between the flow rate controller and the secondary side valve in the gas supply flow path and connected to a secondary side exhaust mechanism.
- a gas exhaust flow path and a secondary exhaust valve disposed in the secondary gas exhaust flow path, wherein the flow rate controller is connected to the primary side valve and the secondary side valve.
- a control valve and a control orifice disposed between the control valve and the secondary valve.
- gas can be appropriately exhausted from the inside of the flow controller that controls the flow rate of gas supplied into the processing chamber.
- FIG. 7 is a graph showing how spikes occur at the start of processing;
- FIG. 10 is a graph showing the state of deterioration of gas fall at the end of processing;
- FIG. 1 is an explanatory diagram showing a configuration example of a wafer processing system according to an embodiment;
- FIG. 1 is a cross-sectional view showing a configuration example of a plasma processing apparatus according to an embodiment;
- FIG. 3 is a system diagram showing a configuration example of a gas supply unit according to the embodiment;
- FIG. 5 is an explanatory diagram showing another configuration example of the gas supply unit;
- FIG. 5 is an explanatory diagram showing another configuration example of the gas supply unit;
- FIG. 4 is an explanatory diagram schematically showing the state inside the flow controller in the wafer processing according to the embodiment; 5 is a graph showing the pressure within the flow controller during wafer processing according to the embodiment; FIG. 5 is an explanatory diagram showing operation timings of various members in wafer processing according to the embodiment; FIG. 11 is an explanatory view schematically showing the state inside the flow controller in wafer processing according to another embodiment; 7 is a graph showing the state inside the chamber at the start of processing according to the embodiment; It is a graph which shows the relationship between the evacuation time in a flow controller, and an internal pressure. 4 is a graph showing the relationship between the evacuation time in the flow controller and the internal pressure of the plasma processing chamber; FIG.
- FIG. 9 is an explanatory diagram showing operation timings of various members in substrate processing according to the second embodiment
- FIG. 10 is an explanatory view schematically showing the state inside the flow controller in the substrate processing according to the second embodiment
- FIG. 9 is an explanatory diagram showing operation timings of various members in substrate processing according to another embodiment
- FIG. 10 is an explanatory view schematically showing the state inside the flow controller in the substrate processing according to another embodiment
- FIG. 5 is an explanatory diagram showing another configuration example of the gas supply unit
- 9 is a graph showing the effects of the control method according to the second embodiment
- FIG. 5 is an explanatory diagram showing another configuration example of the gas supply unit;
- a semiconductor substrate placed in the inner space of a chamber is subjected to various gases such as etching, film formation, cleaning, etc. under a desired gas atmosphere. processing takes place.
- gases such as etching, film formation, cleaning, etc.
- it is important to precisely control the flow rate of the gas supplied to the internal space of the chamber in order to obtain the desired gas treatment results for the wafers to be treated.
- Patent Document 1 discloses a gas supply control method using a pressure-controlled flowmeter that controls the flow rate of gas supplied to the internal space of the chamber. According to the gas supply control method described in Patent Document 1, as an example, by controlling the opening and closing of the first valve and the second valve provided respectively on the upstream side and the downstream side of the pressure control type flow meter, The supply and stop of the gas to the inner space of the chamber are repeated to alternately perform the etching process and the deposition process on the wafer.
- the gas supply channel is evacuated, for example, by a vacuum line (see Patent Document 1: Type 1) connected between an orifice provided in a pressure-controlled flowmeter and a first valve, or a downstream side of the chamber. This is done using an exhaust line (Type 2) connected to
- the conventional evacuation method (Type 1, Type 2) cannot properly evacuate the inside of the supply channel, which affects the wafer processing process. I was afraid. Specifically, for example, when the exhaust is performed from the upstream side of the orifice as in Type 1 described above, gas remains in the supply flow path on the downstream side of the orifice, and as shown in FIG. A spike S may occur at the beginning of the process. Further, for example, when exhausting from the downstream side of the orifice as in Type 2 described above, gas remains on the upstream side of the orifice, and as shown in FIG. It may get worse.
- the plasma processing system includes a plasma processing apparatus 1 and a controller 2 as shown in FIG.
- the plasma processing system is an example of a substrate processing system
- the plasma processing apparatus 1 is an example of a substrate processing apparatus.
- the plasma processing apparatus 1 includes a plasma processing chamber 10 , a substrate support section 11 and a plasma generation section 12 .
- Plasma processing chamber 10 has a plasma processing space.
- the plasma processing chamber 10 also has at least one gas inlet for supplying at least one gas to the plasma processing space and at least one gas outlet for exhausting gas from the plasma processing space.
- the gas supply port is connected to a gas supply section 20, which will be described later, and the gas discharge port is connected to an exhaust system 40, which will be described later.
- the substrate support 11 is arranged in the plasma processing space and has a substrate support surface for supporting the substrate.
- the plasma generator 12 is configured to generate plasma from at least one gas supplied into the plasma processing space.
- Plasma formed in the plasma processing space includes capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR plasma (Electron-Cyclotron-resonance plasma), helicon wave excited plasma (HWP: Helicon Wave Plasma), surface wave plasma (SWP: Surface Wave Plasma), or the like.
- various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators.
- the AC signal (AC power) used in the AC plasma generator has a frequency within the range of 100 kHz to 10 GHz.
- AC signals include RF (Radio Frequency) signals and microwave signals.
- the RF signal has a frequency within the range of 100 kHz-150 MHz.
- the controller 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various steps described in this disclosure. Controller 2 may be configured to control elements of plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the controller 2 may be included in the plasma processing apparatus 1 .
- the control unit 2 may include, for example, a computer 2a.
- the computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3.
- Processing unit 2a1 can be configured to perform various control operations by reading a program from storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary.
- the acquired program is stored in the storage unit 2a2, read from the storage unit 2a2 and executed by the processing unit 2a1.
- the medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3.
- the storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof.
- the communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).
- the program may be recorded in a storage medium readable by the computer 2a and installed in the control unit 2 from the storage medium.
- the storage medium may be temporary or non-temporary.
- FIG. 4 is a longitudinal sectional view showing the outline of the configuration of the plasma processing apparatus 1. As shown in FIG.
- the plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply section 20, a power supply 30 and an exhaust system 40. Further, the plasma processing apparatus 1 includes a substrate support section 11 and a gas introduction section. A substrate support 11 is positioned within the plasma processing chamber 10 . The gas introduction is configured to introduce at least one gas into the plasma processing chamber 10 . The gas introduction section includes a showerhead 13 . The showerhead 13 is arranged above the substrate support 11 . In one embodiment, showerhead 13 forms at least a portion of the ceiling of plasma processing chamber 10 . Inside the plasma processing chamber 10, a plasma processing space 10s defined by the shower head 13, the side wall 10a of the plasma processing chamber 10, and the substrate support 11 is formed.
- the plasma processing chamber 10 has at least one gas supply port for supplying at least one gas to the plasma processing space 10s and at least one gas exhaust port for exhausting gas from the plasma processing space 10s.
- Plasma processing chamber 10 is grounded.
- the showerhead 13 and substrate support 11 are electrically isolated from the plasma processing chamber 10 .
- the substrate support portion 11 includes a body portion 11a and a ring assembly 11b.
- the upper surface of body portion 11a has a central region for supporting substrate W and an annular region for supporting ring assembly 11b.
- a wafer is an example of a substrate W;
- the annular region surrounds the central region in plan view.
- the substrate W is arranged on the central region, and the ring assembly 11b is arranged on the annular region so as to surround the substrate W on the central region. Therefore, the central region is also called the substrate support surface for supporting the substrate W, and the annular region is also called the ring support surface for supporting the ring assembly 11b.
- the body portion 11a includes a base and an electrostatic chuck.
- the base includes an electrically conductive member.
- a conductive member of the base can function as a bottom electrode.
- An electrostatic chuck is arranged on the base.
- An electrostatic chuck includes a ceramic member and an electrostatic electrode disposed within the ceramic member.
- the ceramic member has a central region. In one embodiment, the ceramic member also has an annular region. Note that another member surrounding the electrostatic chuck, such as an annular electrostatic chuck or an annular insulating member, may have the annular region. In this case, the ring assembly 11b may be placed on the annular electrostatic chuck, the annular insulating member, or both the electrostatic chuck and the annular insulating member.
- An RF or DC electrode may also be placed within the ceramic member, in which case the RF or DC electrode functions as the bottom electrode.
- An RF or DC electrode is also referred to as a bias electrode when a bias RF signal or DC signal, described below, is connected to the RF or DC electrode. Note that both the conductive member of the base and the RF or DC electrode may function as the lower electrode.
- the ring assembly 11b includes one or more annular members.
- the one or more annular members include one or more edge rings and at least one cover ring.
- the edge ring is made of a conductive material or an insulating material
- the cover ring is made of an insulating material.
- the substrate supporter 11 may include a temperature control module configured to adjust at least one of the ring assembly 11b, the electrostatic chuck, and the substrate W to a target temperature.
- the temperature control module may include heaters, heat transfer media, flow paths, or combinations thereof.
- channels are formed in the base and one or more heaters are located in the ceramic member of the electrostatic chuck.
- the substrate support part 11 may include a heat transfer gas supply part configured to supply a heat transfer gas (backside gas) between the back surface of the substrate W and the central region.
- the showerhead 13 is configured to introduce at least one gas from the gas supply section 20 into the plasma processing space 10s.
- showerhead 13 includes a conductive member.
- a conductive member of the showerhead 13 functions as an upper electrode. That is, showerhead 13 includes an upper electrode.
- the shower head 13 includes at least one, in this embodiment three gas supply ports 14c, 14m, and 14e, at least one, in this embodiment three gas diffusion chambers 15c, 15m, and 15e, and a plurality of gas It has an inlet 16 .
- the gas supplied from the gas supply unit 20 to the gas supply port 14c passes through the gas diffusion chamber 15c and is directed from the plurality of gas introduction ports 16 toward the center region of the substrate W supported by the substrate support unit 11.
- supplied by The gas supplied from the gas supply unit 20 to the gas supply port 14e passes through the gas diffusion chamber 15e and is directed from the plurality of gas introduction ports 16 toward the edge region of the substrate W supported by the substrate support unit 11.
- the gas supplied from the gas supply unit 20 to the gas supply port 14m passes through the gas diffusion chamber 15m and passes through the plurality of gas introduction ports 16 to the central region and the peripheral region of the substrate W supported by the substrate supporting unit 11. It is supplied toward the intermediate (middle) region between.
- the gas introduction section may include one or more side gas injectors (SGI: Side Gas Injector) attached to one or more openings formed in the side wall 10a.
- SGI Side Gas Injector
- FIG. 5 is a system diagram showing the piping system of the gas supply unit 20 as a gas supply system.
- the gas source 100 side which will be described later, in the direction of gas flow may be referred to as the primary side (upstream side), and the showerhead 13 side in the direction of gas flow may be referred to as the secondary side (downstream side).
- the primary side upstream side
- the showerhead 13 side in the direction of gas flow may be referred to as the secondary side (downstream side).
- only one flow control unit 110 out of a plurality of flow control units 110a to 110e shown in FIG. a to e are omitted. That is, it is assumed that the flow control unit 110 shown in FIG. 4 is one of the flow control units 110a to 110e.
- FIG. 4 is one of the flow control units 110a to 110e.
- the gas supply unit 20 includes at least one, in this embodiment, five gas sources 100a to 100e, and at least one, in this embodiment, corresponding to each of the gas sources 100a to 100e. It includes five flow control units 110a-110e. In one embodiment, the gas supply unit 20 is configured to supply different types of gases output from each of the five gas sources 100 to the showerhead 13 via the corresponding flow control units 110, respectively. .
- each flow rate control unit 110 is connected to each corresponding gas source 100 via a primary side supply pipe 120 as a corresponding gas supply flow path.
- primary side valves 121 corresponding to the respective primary side supply pipes 120 are arranged, and by opening and closing the primary side valves 121, the gas supply from the gas source 100 to each flow control unit 110 can be arbitrarily switched.
- a primary side exhaust pipe 130 is provided between the primary side valve 121 and the flow control unit 110, that is, in the primary side supply pipe 120 on the downstream side of the primary side valve 121 and on the upstream side of the flow control unit 110.
- a unit 131 is connected.
- the exhaust unit 131 as a primary side exhaust mechanism is provided in common to each flow control unit 110 in one example.
- primary side exhaust valves 132 corresponding to the respective flow control units 110 are arranged in the primary side exhaust pipe 130 as the primary side gas exhaust flow path.
- the inside of the primary side supply pipe 120 is configured to be able to be evacuated.
- Exhaust unit 131 may include a vacuum pump. Vacuum pumps may include turbomolecular pumps, dry pumps, or combinations thereof.
- the exhaust unit 131 may be used in common with an exhaust system 40 (to be described later) connected to the plasma processing chamber 10 and an exhaust unit 151 (to be described later).
- Any type of valve such as an air operated valve or an electromagnetic valve, can be used as the primary side exhaust valve 132.
- an electromagnetic valve for example. .
- Each flow control unit 110 includes three pressure-controlled flow controllers 111c, 111m, and 111e for controlling the flow rates of gases supplied to the three gas supply ports 14c, 14m, and 14e of the showerhead 13, respectively. (Hereinafter, these may be collectively simply referred to as "flow controller 111".).
- the three flow rate controllers 111 are connected to ends of branched primary side supply pipes 120 (branch supply pipes).
- the primary supply pipe 120 is branched into three branch supply pipes on the downstream side of the connecting portion of the primary supply pipe 120 with the primary exhaust pipe 130 .
- the configuration of the flow controller 111 will be described using FIG. Since the configurations of the respective flow rate controllers 111c, 111m, and 111e are the same, the numbering of elements having the same functional configuration may be omitted in FIG. 4 in order to prevent the illustration from becoming complicated. .
- the flow controller 111 includes an internal feed tube 112, an orifice 113, two pressure sensors 114, 115, a control valve 116 and a control circuit 117.
- the internal supply pipe 112 as a gas supply flow path includes a primary internal supply pipe 112a upstream of the orifice 113 and a secondary internal supply pipe 112b downstream of the orifice 113 .
- the primary side internal supply pipe 112a is connected to the primary side supply pipe 120 described above on the primary side, and is connected to the orifice 113 on the secondary side.
- the secondary side internal supply pipe 112b has a primary side connected to the orifice 113 and a secondary side connected to a secondary side supply pipe 140 which will be described later.
- the orifice 113 is provided between the primary internal supply pipe 112a and the secondary internal supply pipe 112b.
- the two pressure sensors 114, 115 measure the internal pressures of the primary side internal supply pipe 112a and the secondary side internal supply pipe 112b, respectively, that is, the pressures upstream and downstream of the orifice 113, respectively.
- the internal pressure of the primary side internal supply pipe 112a measured by the pressure sensor 114 is referred to as "internal pressure P1”
- the internal pressure of the secondary side internal supply pipe 112b measured by the pressure sensor 115 is referred to as "internal pressure P2”.
- the opening of the control valve 116 is controlled by the control circuit 117 to control the flow rate of the gas that flows through the internal supply pipe 112 and is supplied into the plasma processing chamber 10 (shower head 13). More specifically, the control circuit 117 controls the opening of the control valve 116 to adjust the internal pressure P1 of the primary-side internal supply pipe 112a, so that the downstream side of the orifice 113 (secondary-side internal supply pipe 112b) is controlled to maintain a desired value determined according to the objectives of wafer processing in plasma processing chamber 10 .
- control valve 116 may include a function as a flow modulating device that modulates or pulses the flow rate of at least one gas under the control of the control circuit 117.
- the respective flow rate controllers 111c, 111m, and 111e are connected to the corresponding showerhead via secondary side supply pipes 140c, 140m, and 140e as corresponding gas supply flow paths. It is connected to one of 13 gas supply ports 14c, 14m and 14e.
- secondary side valves 141 corresponding to the respective secondary side supply pipes 140 are arranged, and by opening and closing the secondary side valves 141, gas can be optionally supplied from the respective flow controllers 111 to the shower head 13. is configured to be switchable to Any type of valve, such as an air operated valve or an electromagnetic valve, can be used as the secondary side valve 141.
- an electromagnetic valve for example, an electromagnetic valve.
- other valves for example, the primary side valve 121, the primary side exhaust valve 132, or the later-described secondary side exhaust valve 152 can also be electromagnetic valves.
- an electromagnetic valve By using an electromagnetic valve as the secondary side valve 141, the responsiveness of the gas supply can be particularly preferably improved.
- the respective secondary supply pipes 140 are joined downstream of the corresponding secondary valves 141 and then connected to the shower head 13 .
- the gas supply from each flow controller 111 by opening and closing the secondary side valve 141, different types of gases can be arbitrarily mixed and supplied to the shower head 13 as a mixed gas. It is
- a secondary exhaust pipe 150 is provided between the flow controller 111 and the secondary valve 141, that is, in the secondary supply pipe 140 upstream of the secondary valve 141 and downstream of the flow controller 111.
- An exhaust unit 151 is connected through the .
- the exhaust unit 151 as a secondary side exhaust mechanism is provided in common to each flow controller 111 in one example.
- Secondary exhaust valves 152 corresponding to the respective flow rate controllers 111 are arranged in the secondary exhaust pipe 150 as the secondary gas exhaust passage.
- the inside of the controller 111 (flow control unit 110) and the secondary side supply pipe 140 can be evacuated.
- Exhaust unit 151 may include a vacuum pump. Vacuum pumps may include turbomolecular pumps, dry pumps, or combinations thereof.
- the exhaust unit 151 may be used in common with an exhaust system 40 and an exhaust unit 131 that are connected to the plasma processing chamber 10 and will be described later.
- Any type of valve such as an air operated valve or an electromagnetic valve, can be used as the secondary side exhaust valve 152.
- an electromagnetic valve for example, may be used. preferable.
- the secondary side supply pipe 140 can be connected to another gas supply section 160 downstream of the corresponding secondary side valve 141 .
- the gas supplied from the gas supply section 20 to the showerhead 13 via each flow rate control unit 110 may be mixed with another gas supplied from the other gas supply section 160 .
- Another gas supply 160 may include at least one gas source 161 and at least one flow controller 162 .
- gas supply 160 is configured to supply at least one gas from respective gas sources 161 through respective flow controllers 162 to showerhead 13 .
- Each flow controller 162 may include, for example, a mass flow controller or a pressure-controlled flow controller.
- the other gas supply unit 160 can be configured to supply a larger flow rate of gas to the showerhead 13 than the gas supply unit 20 does.
- the gas supply unit 20 can be configured to supply a small flow rate (for example, 0.1 to 10 sccm, preferably 0.5 to 2 sccm) of gas to the shower head 13 .
- the operation of the gas supply unit 20 is controlled by the control unit 2 described above.
- the control unit 2 independently controls the opening degrees of various valves (primary side valve 121, primary side exhaust valve 132, secondary side valve 141, and secondary side exhaust valve 152) provided in the gas supply unit 20. configured to be controllable by
- the gas supply section 20 independently executes control of gas supply from each of the plurality of flow rate control units 110 to the plasma processing chamber 10, and controls exhaust gas inside the supply pipe in each of the plurality of flow rate control units 110. run independently.
- Power supply 30 includes an RF power supply 31 coupled to plasma processing chamber 10 via at least one impedance match circuit.
- the RF power supply 31 supplies at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to the conductive member (lower electrode) of the substrate support 11 and/or the conductive member (upper electrode) of the showerhead 13 . electrodes).
- RF power RF signal
- the RF power supply 31 can function as at least part of the plasma generator 12 .
- a bias RF signal to the lower electrode, a bias potential is generated in the substrate W, and ion components in the formed plasma can be drawn into the substrate W.
- the RF power supply 31 includes a first RF generator 31a and a second RF generator 31b.
- the first RF generator 31a is coupled to the lower electrode and/or the upper electrode via at least one impedance matching circuit and configured to generate a source RF signal (source RF power) for plasma generation.
- the source RF signal has a frequency within the range of 10 MHz to 150 MHz.
- the first RF generator 31a may be configured to generate multiple source RF signals having different frequencies.
- One or more source RF signals generated are provided to the bottom electrode and/or the top electrode.
- the second RF generator 31b is coupled to the lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power).
- the frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal.
- the bias RF signal has a frequency lower than the frequency of the source RF signal.
- the bias RF signal has a frequency within the range of 100 kHz to 60 MHz.
- the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies.
- One or more bias RF signals generated are provided to the bottom electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.
- Power supply 30 may also include a DC power supply 32 coupled to plasma processing chamber 10 .
- the DC power supply 32 includes a first DC generator 32a and a second DC generator 32b.
- the first DC generator 32a is connected to the bottom electrode and configured to generate a first DC signal.
- the generated first bias DC signal is applied to the bottom electrode.
- the first DC signal may be applied to another electrode, such as an attracting electrode within an electrostatic chuck.
- the second DC generator 32b is connected to the upper electrode and configured to generate the second DC signal. The generated second DC signal is applied to the upper electrode.
- At least one of the first and second DC signals may be pulsed.
- a sequence of DC-based voltage pulses is applied to the bottom electrode and/or the top electrode.
- the voltage pulses may have rectangular, trapezoidal, triangular, or combinations thereof pulse waveforms.
- a waveform generator for generating a sequence of voltage pulses from a DC signal is connected between the first DC generator 32a and the bottom electrode. Therefore, the first DC generator 32a and the waveform generator constitute a voltage pulse generator.
- the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to the upper electrode.
- the voltage pulse may have a positive polarity or a negative polarity.
- the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses in one cycle.
- the first and second DC generators 32a and 32b may be provided in addition to the RF power supply 31, and the first DC generator 32a may be provided instead of the second RF generator 31b. good.
- the exhaust system 40 may be connected to a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example.
- Exhaust system 40 may include a pressure regulating valve and a vacuum pump. The internal pressure of the plasma processing space 10s is adjusted by the pressure regulating valve.
- Vacuum pumps may include turbomolecular pumps, dry pumps, or combinations thereof.
- the gas supply section 20 is provided with five flow rate control units 110a-110e corresponding to the five gas sources 100a-100e, respectively.
- the gas supply section 20 has a one-system configuration in which one type of gas is supplied to one flow rate control unit 110 .
- the configuration of the gas supply unit 20 is not limited to this, and as shown in FIG. It may have a configuration of two or more systems.
- the side valve 121, the primary side exhaust valve 132, the orifice 113, the secondary side exhaust valve 152 and the secondary side valve 141) are connected independently.
- the configuration of the gas supply unit 20 is not limited to this, and from the viewpoint of improving maintainability of the gas supply unit 20, it is desirable that various members are integrally connected to various supply pipes. .
- various members connected to various supply pipes may be integrally configured by being fixed to mounting plates 170 as mounting members.
- CF-based gas for example, C 4 F 6 , C 4 F 8 , etc.
- oxygen (O 2 ) supplied from the gas source 100b A case where the substrate W is etched using gas and argon (Ar) gas supplied from the gas source 100c will be described as an example.
- the flow rate of the CF-based gas supplied from the gas source 100a is controlled by the flow rate control unit 110a.
- the supply flow rate of the oxygen gas supplied from the gas source 100b is controlled by the flow control unit 110b.
- the flow rate of the argon gas supplied from the gas source 100c is controlled by the flow control unit 110c.
- FIG. 8 is an explanatory diagram showing the operation of the flow controller 111 in the main steps of wafer processing.
- 9 is a graph showing the measured values of the pressure sensors 114 and 115 in the main steps shown in FIG. 8, that is, the internal pressures of the primary side internal supply pipe 112a and the secondary side internal supply pipe 112b.
- FIG. 10 is a timing chart diagram of wafer processing according to one embodiment.
- the flow controller 111 includes the three flow controllers 111c, 111m, and 111e included in the flow controller 110. As shown in FIG. That is, it is assumed that the flow controller 111 shown in FIG. 8 indicates one of the flow controllers 111c, 111m, and 111e. The operations of these flow rate controllers 111c, 111m, and 111e are all the same.
- the primary side valve 121c and the secondary side valve 141c of the flow control unit 110c are opened to stop the supply of Ar gas to the plasma processing chamber 10.
- Ar gas acts as a carrier gas in the etching process, and is constantly supplied during the series of etching processes.
- the Ar gas supplied into the plasma processing chamber 10 is controlled by the three flow rate controllers 111c, 111m, and 111e of the flow rate control unit 110c to the gas supply ports 14c, 14m, and 14e of the shower head 13, respectively. Flow rates are individually controlled. Ar gas supplied into the plasma processing chamber 10 may be supplied from another gas supply section 160 . In one example, the supply flow rate of argon gas supplied into the plasma processing chamber 10 is larger than the supply flow rates of the CF-based gas supplied from the gas source 100a and the oxygen gas supplied from the gas source 100b.
- step St1 the primary side valve 121a and the secondary side valve 141a of the flow rate control unit 110a are opened to start supplying the CF-based gas into the plasma processing chamber 10 (FIGS. Step St1 in FIG. 10).
- step St1 the gas introduced from the gas source 100a into the flow rate controller 111 is supplied to the plasma processing chamber 10 after the flow rate is reduced by the orifice 113.
- the internal pressure of the secondary internal supply pipe 112b is lower than the internal pressure of the primary internal supply pipe 112a.
- step St1 a CF-based deposit is formed on the substrate W by the CF-based gas supplied into the plasma processing chamber 10 (hereinafter sometimes referred to as a "deposition step").
- the CF-based gas supplied into the plasma processing chamber 10 is supplied to the gas supply ports 14c, 14m, and 14e of the shower head 13 by the three flow controllers 111c, 111m, and 111e of the flow control unit 110a. are individually controlled. In other words, by individually controlling the supply flow rate of the CF-based gas to each of the center region, middle region and edge region of the substrate W, the formation of CF-based deposits in each of these center region, middle region and edge region. control the amount.
- step St2 the primary side valve 121a and the secondary side valve 141a of the flow rate control unit 110a are closed as shown in FIG. supply of the CF-based gas is stopped (step St2 in FIGS. 9 and 10).
- step St2 the primary side valve 121a and the secondary side valve 141a are closed, so that the insides of the flow rate controller 111, the primary side supply pipe 120 and the secondary side supply pipe 140 are isolated from the outside.
- the gas in the primary side supply pipe 120 moves into the secondary side supply pipe 140 through the orifice, and the internal pressures of the primary side supply pipe 120 and the secondary side supply pipe 140 substantially match and are in equilibrium. becomes.
- the primary side exhaust valve 132a and the secondary side exhaust valve 152a of the flow rate control unit 110a are opened, and the flow rate control unit 110a (flow rate controller 111 ) is evacuated (step St3 in FIGS. 9 and 10: hereinafter sometimes referred to as “first evacuation step”). More specifically, by opening the primary side exhaust valve 132a, the exhaust unit 131 exhausts the interior of the primary side supply pipe 120 and the primary side internal supply pipe 112a, and by opening the secondary side exhaust valve 152a, , the exhaust unit 151 exhausts the interior of the secondary side supply pipe 140 and the secondary side internal supply pipe 112b.
- the exhaust of the flow rate control unit 110a (flow rate controller 111) by the exhaust unit 151 appropriately suppresses the occurrence of the spike S shown in FIG. It is desirable that this is performed until the internal pressure is less than the internal pressure during the deposition process), preferably until the gas in the flow control unit 110a is completely exhausted.
- the inside of the flow controller 111 is exhausted using the exhaust unit 131 and the exhaust unit 151 connected to the upstream side and the downstream side of the flow controller 111, respectively.
- the flow rate controller 111 includes the orifice 113
- the time required for exhausting the primary internal supply pipe 112a upstream of the orifice 113 and the secondary internal supply pipe 112b downstream of the orifice 113 is appropriately shortened.
- step St4 the control valve 116, the primary side exhaust valve 132a and the secondary side exhaust valve 152a of the flow control unit 110a are closed to stop the exhaust of the flow control unit 110a (FIG. 9, Step St4) in FIG.
- step St4 the primary side valve 121a and the secondary side valve 141a are closed, so that the insides of the flow rate controller 111, the primary side supply pipe 120 and the secondary side supply pipe 140 are isolated from the outside.
- the gas in the primary side supply pipe 120 moves into the secondary side supply pipe 140 through the orifice, and the internal pressures of the primary side supply pipe 120 and the secondary side supply pipe 140 substantially match and are in equilibrium. becomes.
- step St4 After the end of the first exhaust process (step St4), as shown in FIG. It may be confirmed that the residual gas in the flow controller 111a has been properly exhausted (step St5 in FIGS. 9 and 10).
- steps St1 to St5 in other words, the deposition process and the first exhaust process may be collectively referred to as a "deposition process (first process)". .
- step St6 in FIG. 10).
- the gas introduced from the gas source 100b into the flow controller 111 is supplied to the plasma processing chamber 10 after its flow rate is reduced by the orifice 113.
- step St6 plasma derived from the O 2 gas supplied into the plasma processing chamber 10 is generated to etch the substrate W (hereinafter sometimes referred to as "etching process").
- the O 2 gas supplied into the plasma processing chamber 10 is supplied to the gas supply ports 14c, 14m, and 14e of the shower head 13 by the three flow controllers 111c, 111m, and 111e of the flow control unit 110b. are individually controlled. In other words, by individually controlling the supply flow rate of the O 2 gas to each of the center region, middle region and edge region of the substrate W, the etching amount of the substrate W in these center region, middle region and edge region can be individually controlled. to control.
- step St7 see FIG. 8(b)).
- step St7 the primary side valve 121b and the secondary side valve 141b are closed, so that the insides of the flow rate controller 111, the primary side supply pipe 120 and the secondary side supply pipe 140 are isolated from the outside.
- the gas in the primary side supply pipe 120 moves into the secondary side supply pipe 140 through the orifice, and the internal pressures of the primary side supply pipe 120 and the secondary side supply pipe 140 substantially match and are in equilibrium. becomes.
- the detailed exhaust method of the flow control unit 110b is the same as the exhaust method of the flow control unit 110a in step St3. Note that the exhaust of the flow control unit 110b (flow controller 111) by the exhaust unit 151 appropriately suppresses the occurrence of the spike S shown in FIG. It is desirable that the internal pressure is less than the internal pressure during the etching process), preferably until the gas in the flow control unit 110b is completely exhausted.
- step St9 the control valve 116, the primary side exhaust valve 132b, and the secondary side exhaust valve 152b of the flow control unit 110b are closed to stop the exhaust of the flow control unit 110b (step St9 in FIGS. 9 and 10: FIG. 8 ( d)).
- step St9 the primary side valve 121b and the secondary side valve 141b are closed, so that the insides of the flow rate controller 111, the primary side supply pipe 120 and the secondary side supply pipe 140 are isolated from the outside.
- the gas in the primary side supply pipe 120 moves into the secondary side supply pipe 140 through the orifice, and the internal pressures of the primary side supply pipe 120 and the secondary side supply pipe 140 substantially match and are in equilibrium. becomes.
- step St9 After the second exhaust process (step St9) is completed, the control valve 116 of the flow controller 111a and the secondary side valve 141a of the flow control unit 110a are opened (see FIG. 8(e)). It may be confirmed that the residual gas in the flow controller 111a has been properly exhausted (step St10 in FIGS. 9 and 10).
- steps St6 to St10 may be collectively referred to as an "etching process (second process)", in other words, the aforementioned etching process and the second exhaust process may be collectively referred to.
- the process cycle including the first process (steps St1 to St5) as the deposition process and the second process (steps St6 to St10) as the etching process is shown in FIG.
- the etching is repeated until the substrate W is etched by a desired amount.
- the time required for one cycle is, for example, 1 to 10 seconds, preferably 0.5 to 3 seconds for the deposition process, 0.5 to 7 seconds for the etching process, and more preferably 0.5 to 7 seconds. is 1 to 2 seconds for the deposition process and 3 to 5 seconds for the etching process.
- the gas supply unit 20 supplies one type of gas to one flow rate control unit 110 in particular.
- precontrol preparations may be performed prior to restarting gas supply to the plasma processing chamber 10 .
- the primary side supply pipe 120 is filled with gas by opening the primary side valve 121 of the flow rate control unit 110, and the secondary side valve 141 is opened. This equilibrates the internal pressure of the internal supply tube 112 and the secondary supply tube 140 with the internal pressure of the plasma processing chamber 10 .
- steps shown in (a) to (d) of FIG. 11 are the same as the steps shown in (a) to (d) of FIG. In this case, the step of confirming that the residual gas in the flow controller 111a corresponding to FIG.
- the primary side valve 121 and the secondary side valve 141 shown in FIG. 11E may be opened after the confirmation process (steps St5 and St10).
- FIG. 12 is a graph showing a comparison result for examining the effect of the plasma processing apparatus 1 according to the above embodiment, in which exhaust was performed using only the exhaust unit 131 connected upstream of the orifice 113. The results of comparison with the case (Type 1 shown in FIG. 1) are shown. In addition, in both the comparative example (Type 1) and the example shown in FIG.
- the exhaust unit 131 connected to the upstream side of the orifice 113 is exhausted, after that, when the secondary-side valve 141 is opened, the secondary-side internal supply pipe 112b remains in the secondary-side internal supply pipe 112b.
- the exhaust unit 151 connected downstream of the orifice 113 is used to perform exhaust, so that when the flow controller 111 is vacuumed for a short period of time (about 1 sec in this embodiment). ), it was found that the occurrence of the spike S can be suppressed.
- FIG. 13 is a graph showing the relationship between the evacuation time and the internal pressure of the flow controller 111 in the first evacuation process (step St3) and the second evacuation process (step St9).
- the evacuation time can be reduced to 2 seconds or less. It has been found that even when the time is set to 0.5 seconds, the pressure inside the flow controller 111 can be reduced to a pressure lower than the pressure during flow control. That is, the inventors have found that the time required for evacuation in the first evacuation process (step St3) and the second evacuation process (step St9) can be shortened to 0.5 seconds or less.
- the flow rate between the orifice 113 of the flow controller 111 and the secondary side valve 141 is provided with an exhaust line (secondary exhaust pipe 150, exhaust unit 151 and secondary exhaust valve 152).
- an exhaust line secondary exhaust pipe 150, exhaust unit 151 and secondary exhaust valve 1502.
- the pressure in the flow control unit 110 is less than the internal pressure during flow control (during the deposition process or the etching process). and preferably until the gas in the flow control unit 110b is completely exhausted.
- the ultimate pressure after evacuation of the flow rate control unit 110 (flow rate controller 111) is not limited to this.
- the gas supply unit 20 has a one-system configuration that supplies one type of gas to one flow control unit 110
- a plurality of types of gas are supplied inside the flow control unit 110. of gas mixture is suppressed. Therefore, when the flow rate control unit 110 (flow rate controller 111) is configured as a single system, the gas in the flow rate control unit 110 is not completely exhausted during evacuation, and a part of it is You can leave it.
- the occurrence of the spike S when restarting the process can be appropriately suppressed by making the pressure in the flow control unit 110 less than the internal pressure during flow control.
- it is important to shorten the plasma rise time inside the plasma processing chamber increase the slope of the graph shown in FIG. 1).
- the inventors of the present invention have found that the plasma rise time can be shortened by causing the gas remaining in the flow control unit 110 (flow controller 111) to flow into the plasma processing chamber 10 when the process is restarted. rice field.
- the inventors of the present invention have found that the flow rate control unit 110 (flow rate controller 111) is evacuated to a pressure that suppresses the occurrence of the spike S when the process is restarted and that the plasma rise time can be shortened. It has been found that the etching process of the substrate W can be executed more preferably by vacuuming.
- the internal pressure of the flow rate control unit 110 (flow rate controller 111) after vacuuming is, for example, 100 Torr or less, preferably 50 Torr or less, so that the spike S at the time of restarting the process It has been found that the generation of the plasma can be suitably shortened while suppressing the generation of the plasma.
- the technology according to the present disclosure can appropriately evacuate the inside of the flow controller 111 even when the evacuation time is shortened in this way. (See FIG. 6).
- the gas supply unit 20 has a configuration of two or more systems, that is, when two or more types of gas are supplied to one flow controller 111, different It is necessary to suppress the mixing of different gases. In other words, before switching the supply of one gas to the flow controller 111 to the supply of another gas, it is necessary to sufficiently exhaust one gas as a residual gas from the inside of the flow controller 111. .
- the present inventors have found that in the conventional exhaust method (for example, Type 1 shown in FIG. 1), in order to exhaust the residual gas from the flow controller 111 to the extent that the influence of the residual gas in the plasma processing chamber 10 can be suppressed, As shown in FIG. 14, it took about 60 seconds to evacuate, but according to the present embodiment, it was found that the effect of residual gas can be sufficiently suppressed even if it takes about 2 seconds. That is, in order to suppress mixing of one gas and another gas inside the flow controller 111, conventionally, it was necessary to exhaust one gas for about 60 seconds. was further performed, it was found that the exhaust time of the one gas can be shortened to about 2 seconds. In other words, the inventors have found that the falling responsiveness of the flow controller 111 to evacuation can be improved.
- the gas supply unit 20 has a configuration of two or more systems, it is possible to instantaneously switch gas supply from different gas sources 100 to one flow controller 111. .
- the supply flow rate of the argon gas supplied into the plasma processing chamber 10 is larger than the supply flow rates of the CF-based gas supplied from the gas source 100a and the oxygen gas supplied from the gas source 100b. set. For this reason, the internal pressure of the secondary side supply pipe 140 to which the secondary side valve 141 is opened is increased, so there is a particular concern about the deterioration of the start-up responsiveness.
- the flow rate controller 111 is filled with the gas before the CF-based gas or the like is supplied to the plasma processing chamber 10, and the internal The supply pipe 112 may be pressurized (hereinafter referred to as "precharge process").
- precharge process A wafer processing method according to the second embodiment, including this precharge process, will be described below with reference to the drawings. In the following description, detailed description of operations (steps) that are substantially the same as those of the above embodiment will be omitted.
- FIG. 15 is a timing chart diagram of substrate processing according to one embodiment.
- FIG. 16 is an explanatory diagram showing the operation of the flow controller 111 in the main steps of wafer processing.
- the flow controller 111 including the three flow controllers 111c, 111m, and 111e included in the flow controller 110 is illustrated. That is, the flow controller 111 shown in FIG. 16 includes flow controllers 111c, 111m, and 111e.
- the primary side valve 121, the primary side exhaust valve 132, the secondary side valve 141 and the secondary side exhaust valve 152 shown in FIG. 121b, primary side exhaust valves 132a, 132b, and secondary side valves 141a, 141b.
- Ar gas acts as a carrier gas in the etching process, and is constantly supplied during the series of etching processes.
- Ar gas supplied into the plasma processing chamber 10 may be supplied from the gas source 100c instead of the other gas supply section 160, as in the above embodiment.
- step Sp1 in FIG. 15 the flow rate controller 111 of the flow rate control unit 110a is is started to be filled with a CF-based gas.
- step Sp1 before the CF-based gas is supplied to the plasma processing chamber 10, the flow rate controller 111 is filled with the CF-based gas, and the internal supply pipe 112 is pressurized (first precharge process).
- the internal pressure inside the secondary-side supply pipe 140 to which the secondary-side valve 141a is opened increases with the supply of Ar gas to the plasma processing chamber 10 in step Sp0.
- Ar gas flows from the secondary side supply pipe 140 into the internal supply pipe 112. and the like may occur, delaying the supply of the CF-based gas from the flow controller 111 to the plasma processing chamber 10, and degrading the start-up responsiveness of the etching process.
- the flow controller 111 is filled with the CF-based gas prior to the supply of the CF-based gas, and the internal pressure of the internal supply pipe 112 (more specifically, the internal pressure of the secondary internal supply pipe 112b P2) is boosted.
- the difference in internal pressure between the internal supply pipe 112 and the secondary supply pipe 140 can be reduced, and the deterioration of the start-up responsiveness of the etching process can be suppressed.
- the internal pressure of the internal supply pipe 112 is increased to a level that substantially matches the internal pressure of the secondary side supply pipe 140 . Specifically, it is desirable to raise the internal pressure to about 80 to 120% of the internal pressure of the secondary supply pipe 140 . If the internal pressure of the internal supply pipe 112 is less than 80% of the internal pressure of the secondary supply pipe 140, there is a risk that the start-up responsiveness of the etching process will deteriorate as described above. Further, when the internal pressure of the internal supply pipe 112 exceeds 120% of the internal pressure of the secondary supply pipe 140, the CF-based gas flows from the internal supply pipe 112 into the plasma processing chamber 10 at once, causing the above-described This may cause spike S to occur.
- the flow rate controller 111 is filled with the CF-based gas at a flow rate smaller than at least the flow rate of the CF-based gas supplied in the deposition step (step Sp2) described later. More specifically, as shown in FIG. 15, the opening of the control valve 116 when the flow rate controller 111 is filled with the CF-based gas is larger than the opening of the control valve 116 in the deposition step (step Sp2). It is desirable to be controlled small.
- step Sp2 in FIG. 15 When the inside of the internal supply pipe 112 is pressurized to a desired pressure, next, as shown in FIG. That is, the deposition process described above is started (step Sp2 in FIG. 15).
- the primary side valve 121a, the control valve 116 and the secondary side valve 141a of the flow rate control unit 110a are closed as shown in FIG.
- the supply of the CF-based gas into the chamber 10 is stopped (step Sp3 in FIG. 15).
- the primary side exhaust valve 132a and the secondary side exhaust valve 152a of the flow control unit 110a are opened, and the flow control unit 110a (flow controller 111 ) is evacuated (first evacuation step: step Sp4 in FIG. 15).
- step Sp5 the primary side exhaust valve 132a and the secondary side exhaust valve 152a are closed to stop the exhaust of the flow rate control unit 110a (step Sp5 in FIG. 15).
- step Sp4 the control valve 116 of the flow controller 111a and the secondary side valve 141a of the flow controller 110a are opened to remove the residual gas in the flow controller 111a. You may want to check that it has been properly vented.
- control valve 116 was closed at step Sp3 (see FIGS. 15 and 16).
- the timing of closing the control valve 116 is not limited to this. It is desirable to close control valve 116 .
- step Sp6 prior to supplying O 2 gas to the plasma processing chamber 10, the flow controller 111 is filled with O 2 gas and the internal supply pipe 112 is pressurized (second precharge process).
- the internal pressure of the internal supply pipe 112 (more specifically, the internal pressure P2 of the secondary internal supply pipe 112b) is desirably raised to substantially match the internal pressure of the secondary internal supply pipe 140 . Specifically, it is desirable to raise the internal pressure to about 80 to 120% of the internal pressure of the secondary supply pipe 140 . If the internal pressure of the internal supply pipe 112 is less than 80% of the internal pressure of the secondary supply pipe 140, there is a risk that the start-up responsiveness of the etching process will deteriorate as described above.
- the flow rate controller 111 is filled with O 2 gas at a flow rate smaller than the flow rate of O 2 gas supplied in the etching step (step Sp7), which will be described later. More specifically, as shown in FIG. 15, the degree of opening of the control valve 116 when filling the flow rate controller 111 with O 2 gas is smaller than the degree of opening of the control valve 116 in the etching step (step Sp7). It is desirable to be controlled.
- the secondary valve 141b is opened (see FIG. 16(c)) to stop the supply of O 2 gas into the plasma processing chamber 10.
- supply of an RF signal (RF power) from the RF power source 31 to the lower electrode and/or the upper electrode of the substrate supporting portion 11 is started, and the etching process described above is started (step Sp7 in FIG. 15).
- the primary side exhaust valve 132b and the secondary side exhaust valve 152b of the flow control unit 110b are opened to supply O 2 gas to the flow control unit 110b (flow controller 111 ) is evacuated (second evacuation step: step Sp9 in FIG. 15).
- step Sp9 the primary side exhaust valve 132b and the secondary side exhaust valve 152b of the flow control unit 110b are closed to stop the exhaust of the flow control unit 110b (step Sp10 in FIG. 15).
- step Sp9 the control valve 116 of the flow controller 111b and the secondary side valve 141b of the flow controller 110b are opened to remove residual gas in the flow controller 111b. You may want to check that it has been properly vented.
- control valve 116 was closed at step Sp8 (see FIGS. 15 and 16).
- the timing of closing the control valve 116 is not limited to this. It is desirable to close control valve 116 .
- a cycle including the above deposition process (first process: steps Sp1 to Sp5) and etching process (second process: steps Sp6 to Sp10) is desired for the substrate W. is repeatedly executed until an etching amount of .
- the first precharge process (step Sp1), the deposition process (step Sp2), the first exhaust process (step Sp4), the second precharge process (step Sp6 ), the etching step (step Sp7), and the second evacuation step (step Sp10) are sequentially performed, but the method of the etching treatment is not limited to this.
- the second exhaust process (internal exhaust of the flow control unit 110b) may be performed during the deposition process (supply of the CF-based gas from the flow control unit 110a).
- the first evacuation step (internal evacuation of flow control unit 110a) may be performed during the etching step (supply of O 2 gas from flow control unit 110b).
- the exhaust process of the other flow control unit 110 to which gas is not being supplied is simultaneously performed, thereby improving the throughput of the etching process. .
- the one flow control unit 110 Evacuation (first exhaust process or second exhaust process) and gas filling (precharge process) were sequentially performed, but these exhaust processes and precharge process can be omitted as appropriate.
- the first process or the second After completion of the process, depending on the internal pressure of the flow control unit 110, the evacuation process may be skipped and the precharge process may be performed immediately.
- the evacuation process may be omitted.
- the flow rate of Ar gas supplied from another gas supply unit 160 is small and the internal pressure of the secondary side supply pipe 140 is low, after the exhaust process is completed, pre The charging process may be skipped and the treatment process initiated.
- the flow rate control unit 110 is configured to be evacuated from each of the upstream side and the downstream side of the flow rate control unit 110, but the present embodiment
- at least an exhaust unit (exhaust unit 151 in the illustrated example) may be connected downstream of the flow rate control unit 110 .
- the flow rate control unit 110 according to the technology of the present disclosure includes a primary side exhaust pipe 130, an exhaust unit 131, and a primary side The exhaust valve 132 may not be provided.
- the flow rate controller 111 prior to supplying the gas to the plasma processing chamber 10, the flow rate controller 111 is filled with the gas, and the internal supply pipe 112 is pressurized (precharge process). do.
- the internal pressure of the internal supply pipe 112 after the precharge process (more specifically, the internal pressure P2 of the secondary internal supply pipe 112b) is, for example, substantially the same as the internal pressure of the secondary internal supply pipe 140, preferably is about 80 to 120% of the internal pressure of the secondary supply pipe 140 .
- FIG. 20 is a graph showing the results of examination of the gas responsiveness of plasma processing in the processing method according to this embodiment.
- the solid line indicates the case where O gas was precharged at 0.9 sccm for 0.5 sec (Example 1)
- the dashed line indicates the case where O gas was precharged at 0.9 sccm for 0.2 sec.
- the one-dot chain line indicates the results in the case where precharge was not performed (Comparative Example).
- the supply of Ar gas at 950 sccm from the other gas supply unit 160 was continued in both Examples 1 and 2 and the comparative example.
- the rise response can be improved (that is, the slope of the graph shown in FIG. 20 is can be increased). Also, at this time, it was found that the longer the time for performing the precharge process, the more the rise responsiveness could be improved (that is, it was found that the slope of the graph shown in FIG. 20 could be increased). This is thought to be due to the fact that when the gas is supplied at a constant flow rate, the longer the precharge process is performed, the smaller the difference in internal pressure between the internal supply pipe 112 and the secondary supply pipe 140. be done.
- the internal pressure of the internal supply pipe 112 substantially matches the internal pressure of the secondary supply pipe 140 (approximately 80 to 120% of the internal pressure of the secondary supply pipe 140). ), the time for the precharge process is preferably determined.
- the secondary side valve 141 is opened to start various treatment processes.
- the condition for opening the secondary side valve 141) is not limited to the internal pressure of the internal supply pipe 112.
- the opening timing of the secondary side valve 141 is determined by measuring the internal pressure of the internal supply pipe 112.
- the internal pressure of the internal supply pipe 112 may be adjusted accordingly.
- the timing of opening the secondary side valve 141 can be determined, for example, based on the timing of starting the supply of Ar gas from the other gas supply unit 160 in step Sp0.
- the opening of the control valve 116 is adjusted so that the internal pressure of the internal supply pipe 112 reaches a desired value at the opening timing of the secondary side valve 141 thus determined. be adjusted accordingly. That is, for example, when the internal pressure of the internal supply pipe 112 is expected to exceed a desired value at the timing of opening the secondary side valve 141, the opening of the control valve 116 is controlled to be small. Further, for example, when the internal pressure of the internal supply pipe 112 is predicted to become smaller than a desired value at the timing of opening the secondary side valve 141, control is performed to increase the opening of the control valve 116.
- the opening timing of the secondary side valve 141 is determined based on the internal pressure of the internal supply pipe 112 in which the precharge process is performed.
- other parameters may be set as conditions. Specifically, for example, instead of or in addition to the internal pressure of the internal supply pipe 112, the flow rate of the gas supplied from the flow controller 111, the gas supply time, the internal temperature of the flow controller 111, or the secondary side supply The conditions may be set using parameters such as the flow rate of the Ar gas flowing through the pipe 140 and the instrumental difference of the control valve 116 .
- the opening timing of the secondary side valve 141 is set using parameters such as the flow rate of the gas supplied from the flow rate controller 111, the internal temperature of the flow rate controller 111, or the flow rate of the Ar gas flowing through the secondary side supply pipe 140.
- the opening degree of the control valve 116 may be further adjusted.
- the precharge process may be performed only on a predetermined model recipe prior to initiation of plasma processing. Specifically, as described above, conditions such as the gas supply flow rate and supply time in precharging can be determined in advance, and the precharging process can be executed according to the determined conditions (for example, gas supply flow rate). According to Phase 1, the plasma processing of the substrate W can be appropriately performed by performing the precharge process by setting the conditions in advance to improve the rise responsiveness and prevent the occurrence of spikes.
- the internal pressure P2 is calculated from the flow rate of Ar gas as a carrier gas, the temperature of the shower head 13, or the flow rate ratio of the gas supplied to each gas supply port 14c, 14m, 14e of the shower head 13, or the internal pressure P2 is determined by the pressure sensor 115.
- the above precharge process can be automatically executed under appropriate conditions (eg, gas supply flow rate, filling amount).
- the precharge process is appropriately controlled based on various measurement results and calculation results.
- the precharge process can be appropriately changed in accordance with the flow rate controller 111 and the internal state of the plasma processing chamber 10, so that a more appropriate plasma processing result can be obtained as compared with phase1.
- Phase 3 The precharge process using the flow control unit 110 or the flow controller 111 equipped with a mechanism for controlling the internal pressure of the internal supply pipe 112 (more specifically, the internal pressure P2 of the secondary internal supply pipe 112b) can be executed.
- Phase 3 has the advantage that it is no longer necessary to strictly control the fill amount until the valve is opened.
- control can be unified by the internal pressure control mechanism, it is possible to mitigate the influence of individual differences in the flow control unit 110 or the flow controller 111 and the influence of variation in control reproduction.
- the exhaust line (the secondary exhaust pipe 150 and the exhaust unit 151) is connected to the downstream side of the orifice 113.
- FIG. Therefore, when stopping the gas supply to the plasma processing chamber 10, it is not necessary to stop the gas supply from the gas source 100 (the primary side valve 121 is closed), and the secondary side exhaust valve 152 is opened. Then, the exhaust can be continued at a constant flow rate (supply flow rate to the plasma processing chamber 10). In other words, only by repeatedly opening and closing the secondary side valve 141 and the secondary side exhaust valve 152, the gas supply to the plasma processing chamber 10 can be switched on and off. No intervening flow control is required.
- control of the gas flow rate by the flow controller 111 which has conventionally been performed for each cycle that is repeatedly performed, can be omitted, and the supply of the gas to the plasma processing chamber 10 can be instantaneously restarted at a desired constant flow rate. be able to.
- the orifice 113 as the control-side orifice for controlling the gas flow rate of the gas supply unit 20 is arranged only inside the flow controller 111.
- An orifice may also be provided in the gas supply channel.
- the hole diameter of the orifice 113 arranged inside the flow controller 111 is configured to the minimum processing limit, and the orifices 180 and 181 provided downstream of the orifice 113 are configured to have different hole diameters.
- the gas supplied from the gas source 100 to the flow rate controller 111 is first introduced into the secondary side supply pipe 140 by the orifice 113 at the minimum flow rate that can be controlled with the hole diameter of the minimum processing limit.
- the gas introduced into the secondary side supply pipe 140 branches at the connection with the secondary side exhaust pipe 150 .
- the orifices 180 and 181 are configured with different hole diameters, the flow rate of the gas flowing to the orifice 180 (plasma processing chamber 10) side and the orifice 181 (exhaust unit 151) side respectively according to the ratio of the hole diameters. The ratio changes.
- the flow rate can be controlled by the minimum processing limit hole diameter of the orifice 113 or less.
- Gases may be supplied to the plasma processing chamber 10 at a flow rate.
- the hole diameter ratio of the orifices 180 and 181 is determined based on the ratio of the target gas flow rate supplied to the plasma processing chamber 10 to the minimum gas flow rate output from the orifice 113 . This allows more precise control of the processing of the substrate W in the plasma processing chamber 10 .
- the orifices 180 and 181 having different hole diameters are provided to control the flow rate ratio of the gases flowing to the plasma processing chamber 10 side and the exhaust unit 151 side. It is not limited to this. Specifically, if the secondary side exhaust pipe 150 and the secondary side supply pipe 140 on the downstream side of the connecting portion with the secondary side exhaust pipe 150 have different flow path sizes, gas You can control the flow ratio.
- the secondary side valve 141 and the secondary side exhaust valve 152 may each be constituted by a valve whose degree of opening can be adjusted, such as a needle valve.
- the orifice provided in the flow controller is used to calculate the flow rate of the gas flowing through the gas supply channel.
- the gas flow rate cannot be calculated immediately.
- self-diagnosis confirmation of the validity of the calculated gas flow rate
- the gas filled inside the flow controller is exhausted from the plasma processing chamber side by closing the primary side valve and the primary side exhaust valve and opening the secondary side valve.
- the appropriateness of the calculated gas flow rate is confirmed by confirming whether the exhaust characteristic, which is the pressure drop rate of the flow controller with respect to the exhaust time, is appropriate (for example, whether there is any change from the state at the time of shipment). It is determined (self-diagnosis) whether there is any.
- the self-diagnosis is performed by such a conventional method, since the flow controller is exhausted from the plasma processing chamber side, the self-diagnosis of the orifice and the processing of the substrate W in the plasma processing chamber can be performed in parallel. Can not.
- the exhaust unit 151 connected to the secondary supply pipe 140 is used to reduce the flow rate.
- Evacuation of the controller 111 can be performed. That is, the self-diagnosis of the orifice 113 can be performed independently of the processing of the substrate W in the plasma processing chamber 10 (in parallel with the processing of the substrate W). Therefore, there is no need to stop the processing of the substrate W during the self-diagnosis of the orifice 113, and the productivity of the plasma processing apparatus 1 can be improved.
- self-diagnosis can be performed independently of the processing of the substrate W in this way, each substrate W processed in the plasma processing chamber 10 or each step of processing the substrate W shown in FIG. For example, self-diagnosis can be executed at any timing, and the number of scraps of substrates W caused by improper calculation of the gas flow rate can be appropriately reduced.
- the self-diagnosis of the two pressure sensors 114 and 115 provided in the flow controller is performed independently of the processing of the substrate W in the same manner as the orifice self-diagnosis described above. (in parallel with the processing of the substrate W).
- the gas filled inside the flow controller 111 is exhausted by the exhaust unit 151 by closing the primary side valve 121 and the primary side exhaust valve 132 and opening the secondary side exhaust valve 152 .
- the internal pressure of the flow controller 111 is measured by the two pressure sensors 114 and 115, and the measurement results are compared with each other. You can check whether or not
- the two pressures it is possible to check whether or not the sensors 114 and 115 have a span deviation. Further, after the gas in the flow controller 111 is sufficiently exhausted and the inside of the flow controller 111 is evacuated, the measurement results of the two pressure sensors 114 and 115 are compared with each other to obtain It is possible to confirm whether or not the pressure sensors 114 and 115 have zero-point deviation.
- the self-diagnosis of these pressure sensors 114 and 115 may be performed in parallel with the self-diagnosis of the orifice 113 described above. That is, for example, prior to the self-diagnosis of the orifice 113, when the inside of the flow controller 111 is filled with gas, the pressure sensors 114 and 115 are checked for span deviation. , the internal pressure of the flow rate controller 111 after evacuation may be measured to check the zero point deviation of the pressure sensors 114 and 115 .
- the secondary exhaust pipes 150 connected to the respective flow controllers 111 After joining on the downstream side of the side exhaust valve 152 , the exhaust unit 151 exhausts the air.
- each of the secondary-side exhaust valves 152 is controlled so that the mixture-inhibited gas is It is desirable to control that they do not mix with each other in the exhaust line. More specifically, when two or more types of gases that are dangerous to mix are exhausted, after exhausting one gas individually, the exhaust line is emptied for a predetermined delay time (for example, 100 msec). After that, it is desirable to perform evacuation of other gases separately.
- a predetermined delay time for example, 100 msec.
- Combinations of prohibited gases include a combination of hydrogen (H 2 ) gas and oxygen (O 2 ) gas, a combination of hydrogen bromide (HBr) gas and chlorine (Cl 2 ) gas, or ammonia (NH 3 ) gas. and chlorine (Cl 2 ) gas.
- a gas supply system for supplying gas into a processing chamber comprising: a plurality of gas supply channels configured to be capable of independently supplying gas to the processing chamber; a flow controller arranged; a primary valve arranged upstream of the flow controller in the gas supply channel; and a branch between the flow controller and the primary valve in the gas supply channel.
- a primary side gas exhaust passage connected to the primary side exhaust mechanism; a primary side exhaust valve disposed in the primary side gas exhaust passage; and a downstream side of the flow controller in the gas supply passage.
- a secondary-side gas exhaust flow path branched between the flow rate controller and the secondary-side valve in the gas supply flow path and connected to a secondary-side exhaust mechanism; a secondary-side exhaust valve disposed in the secondary-side gas exhaust flow path, the flow rate controller comprising: a control valve connected to the primary-side valve and the secondary-side valve; and the control valve. and a control orifice disposed between said secondary valve.
- the gas supply channel has a plurality of branch supply pipes that independently supply gas to a plurality of different positions inside the processing chamber, and each of the plurality of branch supply pipes independently The gas supply system according to any one of (1) to (4), wherein the flow rate controller, the secondary side valve, the secondary side gas exhaust flow path, and the secondary side exhaust valve are connected.
- the plurality of branch supply pipes are configured to be capable of independently supplying the gas to at least an edge region and a center region of the substrate introduced into the processing chamber. ).
- a plasma processing apparatus for processing a substrate comprising a processing chamber, a substrate support provided inside the processing chamber, and supplying a gas to the inside of the processing chamber (1) to (7).
- a plasma processing apparatus comprising: a gas supply system according to any one of claims 1 to 3; and a plasma generator configured to generate plasma from gases in the processing chamber.
- a gas supply method using a gas supply system wherein the gas supply system includes a plurality of gas supply channels configured to be capable of independently supplying gas to a processing chamber, and a plurality of the gas supply channels.
- a flow controller arranged in each of the gas supply passages, a primary valve arranged upstream of the flow controller in the gas supply passage, and a flow controller and the primary valve in the gas supply passage; a primary side gas exhaust passage branched between and connected to a primary side exhaust mechanism; a primary side exhaust valve arranged in the primary side gas exhaust passage; and a downstream side of the flow controller in the gas supply passage. and a secondary-side gas exhaust flow path branched between the flow controller and the secondary-side valve in the gas supply flow path and connected to a secondary-side exhaust mechanism.
- the flow rate controller is a control valve connected to the primary-side valve and the secondary-side valve; a control orifice disposed between the control valve and the secondary valve, and (A) opening the primary valve and the secondary valve of at least one of the gas supply channels; (B) closing the primary side valve and the secondary side valve opened in step (A); and (C) step (A). opening the primary-side exhaust valve and the secondary-side exhaust valve of the at least one gas supply channel that has supplied the gas to the inside of the processing chamber to release the gas from the at least one gas supply channel; and (D) closing the primary side exhaust valve and the secondary side exhaust valve opened in the step (C).
- a flow controller arranged in each of the gas supply passages, a primary valve arranged upstream of the flow controller in the gas supply passage, and a flow controller and the primary valve in the gas supply passage; a primary side gas exhaust passage branched between and connected to a primary side exhaust mechanism; a primary side exhaust valve arranged in the primary side gas exhaust passage; and a downstream side of the flow controller in the gas supply passage. and a secondary-side gas exhaust flow path branched between the flow controller and the secondary-side valve in the gas supply flow path and connected to a secondary-side exhaust mechanism.
- the flow rate controller is a control valve connected to the primary-side valve and the secondary-side valve; a control-side orifice disposed between the control valve and the secondary-side valve, (A) opening the primary-side valve and the secondary-side valve of the gas supply flow path; (B) closing the primary exhaust valve and the secondary exhaust valve to supply gas into the processing chamber; and (B) closing the primary exhaust valve and the secondary exhaust valve of the gas supply flow path. and a step of opening and closing the primary side exhaust valve and the secondary side valve to exhaust the gas from the gas supply flow path.
- the flow rate controller has at least one pressure sensor, and supplies gas to the inside of the processing chamber from at least one gas supply channel among the plurality of gas supply channels; and performing self-diagnosis of the flow rate controller arranged in the other gas supply path among the supply paths, wherein self-diagnosis of the flow rate controller is performed on the other gas supply path.
- the flow controller has a plurality of pressure sensors, and when self-diagnosing the flow controller, the internal pressure of the flow controller after the gas is filled and the pressure after the filled gas is exhausted measuring the internal pressure of the flow controller with a plurality of the pressure sensors; and comparing the internal pressure measurements measured with each of the plurality of pressure sensors. , the gas supply method according to (13) above.
- a gas control system for controlling gas supply into a processing chamber comprising: a plurality of gas supply channels configured to be capable of independently supplying gas to the processing chamber; and a plurality of the gas supply channels.
- a primary-side valve arranged upstream of the orifice in the gas supply channel; and a primary valve branching between the orifice and the primary-side valve in the gas supply channel.
- a primary side gas exhaust passage connected to a side exhaust mechanism, a primary side exhaust valve arranged in the primary side gas exhaust passage, and a secondary side arranged downstream of the orifice in the gas supply passage.
- a valve a secondary-side gas exhaust flow path branched between the orifice and the secondary-side valve in the gas supply flow path and connected to a secondary-side exhaust mechanism, and the secondary-side gas exhaust flow path. and a control unit that independently controls opening degrees of the primary side valve, the primary side exhaust valve, the secondary side valve, and the secondary side exhaust valve. a step in which the control unit opens the primary side valve and the secondary side valve and closes the primary side exhaust valve and the secondary side exhaust valve to supply gas into the processing chamber; and a step of closing the primary side valve and the secondary side valve and opening the primary side exhaust valve and the secondary side exhaust valve to exhaust the inside of the gas supply flow path.
- a gas control system that controls and executes the operation of the (16)
- a gas control system for controlling gas supply into a processing chamber comprising: a gas supply channel configured to supply gas to the processing chamber; an orifice arranged in the gas supply channel; a primary side valve arranged upstream of the orifice in the gas supply channel; and a primary side branched between the orifice and the primary side valve in the gas supply channel and connected to a primary side exhaust mechanism.
- a gas exhaust passage a primary exhaust valve arranged in the primary gas exhaust passage, a secondary valve arranged downstream of the orifice in the gas supply passage, and a secondary-side gas exhaust passage branched between the orifice and the secondary-side valve and connected to a secondary-side exhaust mechanism; and a secondary-side exhaust valve arranged in the secondary-side gas exhaust passage.
- control unit that independently controls opening degrees of the primary side valve, the primary side exhaust valve, the secondary side valve, and the secondary side exhaust valve, wherein the control unit controls the primary side supplying gas into the processing chamber by opening the valve and the secondary side valve and closing the primary side exhaust valve and the secondary side exhaust valve; a control for alternately and repeatedly executing a step of closing a valve and opening the primary side exhaust valve and the secondary side exhaust valve to exhaust the inside of the gas supply channel; and the gas supply channel. and performing control to operate the primary side exhaust mechanism and the secondary side exhaust mechanism so that at least the gas remains in the gas supply flow path when the inside of the is exhausted, and the gas after exhausting
- the gas control system wherein the internal pressure of the supply channel is 100 Torr or less.
- the orifice, the primary side valve, the primary side exhaust valve, the secondary side valve, and the secondary side including a plurality of gas supply channels configured to be capable of independently supplying gas to the processing chamber.
- the gas supply channel has a plurality of branch supply pipes that independently supply the gas to a plurality of different positions inside the processing chamber, and each of the plurality of branch supply pipes has an independent The gas control system according to any one of (15) to (18), wherein the secondary side valve, the secondary side gas exhaust flow path, and the secondary side exhaust valve are connected to each other. (20) 6. The gas control system according to claim 5, wherein said gas supply channel branches into a plurality of said branch supply pipes on a downstream side of a connecting portion with said primary side gas exhaust channel. (21) (19) or (20), wherein the plurality of branch supply pipes are configured to be capable of independently supplying the gas to at least an edge region and a center region of the substrate introduced into the processing chamber. ).
- (22) further comprising a flow controller for controlling the flow rate of the gas supplied to the interior of the processing chamber;
- the orifice is arranged inside the flow controller, and the primary side valve, the primary side exhaust valve, the secondary side valve and the secondary side exhaust valve are arranged outside the flow controller, 15)
- the gas control system according to any one of the above (21).
- (23) The gas control system according to (22), wherein the flow rate controller further includes an opening adjustment valve arranged upstream of the orifice in the gas supply flow path.
- the gas control system according to any one of (15) to (24), wherein the gas supplied into the processing chamber has a flow rate of 0.1 sccm to 10 sccm.
- the control unit performs control to alternately and repeatedly perform a deposition process for forming a deposit on a substrate introduced into the processing chamber and an etching process for etching the substrate, and the deposition process and the etching process has a step of supplying gas into the processing chamber and a step of evacuating the inside of the gas supply channel, respectively, and one cycle of processing including the deposition process and the etching process
- the gas control system according to any one of (15) to (25) above, wherein the time is 1 second to 10 seconds.
- the gas supply unit includes a plurality of gas supply channels capable of independently supplying gas to the processing chamber, and each of the plurality of gas supply channels an orifice arranged in the gas supply passage, a primary side valve arranged upstream of the orifice in the gas supply passage, and a primary side exhaust branching between the orifice and the primary side valve in the gas supply passage
- a primary side gas exhaust passage connected to a mechanism, a primary side exhaust valve arranged in the primary side gas exhaust passage, and a secondary side valve arranged downstream of the orifice in the gas supply passage.
- a secondary-side gas exhaust flow path branched between the orifice and the secondary-side valve in the gas supply flow path and connected to a secondary-side exhaust mechanism; and a secondary-side gas exhaust flow path. and a secondary side exhaust valve, wherein the control unit opens the primary side valve and the secondary side valve, and the primary side exhaust valve and the secondary side exhaust valve and closing the primary-side valve and the secondary-side valve, and opening the primary-side exhaust valve and the secondary-side exhaust valve to open the exhausting the inside of the gas supply channel; and performing the control alternately and repeatedly; a control for operating the primary side exhaust mechanism and the secondary side exhaust mechanism so as to lower the plasma processing apparatus.
- gas control system comprises a plurality of gas supply channels capable of independently supplying gas to a processing chamber, and a plurality of the gas supply channels.
- a primary-side valve arranged upstream of the orifice in the gas supply channel; and a primary valve branching between the orifice and the primary-side valve in the gas supply channel.
- a primary side gas exhaust flow path connected to the side exhaust mechanism; a primary-side exhaust valve arranged in the primary-side gas exhaust passage; a secondary-side valve arranged downstream of the orifice in the gas supply passage; a secondary-side gas exhaust flow path branched from a side valve and connected to a secondary-side exhaust mechanism; and a secondary-side exhaust valve arranged in the secondary-side gas exhaust flow path, (A) opening the primary side valve and the secondary side valve of a first group of gas supply flow paths, at least one of which is selected from the plurality of gas supply flow paths, and the first gas supply flow path; a step of closing the primary side exhaust valve, the secondary side exhaust valve, and the primary side valve, the secondary side valve, the primary side exhaust valve, and the secondary side exhaust valve of the other gas supply flow path of the group; and (B) closing the primary side valve and the secondary side valve in the first gas supply flow path group, and then closing the primary side exhaust valve and the secondary side of the first gas supply flow path group.
- At least one of the other gas supply flow paths is (D) opening the primary valve and the secondary valve of the selected second gas supply channel group; and (D) the primary valve and the secondary valve of the second gas supply channel group. and opening the primary side exhaust valve and the secondary side exhaust valve of the second gas supply passage group after closing the side valve.
- a gas control system for controlling gas supply into a processing chamber comprising: a gas supply channel configured to supply gas to the processing chamber; an orifice arranged in the gas supply channel; a flow control valve arranged upstream of the orifice in the gas supply channel; a primary valve arranged upstream of the flow control valve in the gas supply channel; and the orifice in the gas supply channel. and a secondary-side gas exhaust flow path branched between the orifice and the secondary-side valve in the gas supply flow path and connected to a secondary-side exhaust mechanism. and the opening degrees of the secondary exhaust valve arranged in the secondary gas exhaust flow path, the flow rate control valve, the primary valve, the secondary valve and the secondary exhaust valve are independently controlled.
- control unit for controlling, wherein the control unit opens the flow control valve, the primary side valve and the secondary side valve, and closes the primary side exhaust valve and the secondary side exhaust valve and closing the flow control valve, the primary side valve and the secondary side valve, and opening the primary side exhaust valve and the secondary side exhaust valve.
- the control unit controls the pressure on the downstream side of the orifice, the flow rate of the gas flowing through the gas supply passage, the gas supply time, the internal temperature of the gas supply passage, and the downstream side of the secondary valve.
- the gas control system according to (30), wherein the opening timing of the secondary side valve is determined using at least one parameter of the flow rate of the other gas.
- the gas control according to any one of (30) to (33), wherein the control unit fills the gas at a supply flow rate determined prior to filling the downstream side of the orifice with the gas. system.
- the gas supply channel is configured to be capable of supplying gases independently to different regions in the processing chamber, and the control unit controls the flow rate of other gases flowing downstream of the secondary valve. , the temperature of the processing chamber, the flow ratio of the gas supplied to each of the different regions, or the pressure downstream of the orifice, at a supply flow rate determined using the parameters of the gas
- the gas control system according to any one of (30) to (33), wherein the filling of the gas is performed.
- the gas control system according to any one of (30) to (38) above, comprising a plurality of the gas supply channels configured to be capable of supplying gas independently to the processing chamber. (40) A different type of gas is independently supplied to each of the plurality of gas supply channels, and the controller evacuates the inside of the gas supply channel according to the internal pressure of the gas supply channel.
- the gas control system which executes control that omits the step of (41) a processing chamber, a substrate support arranged inside the processing chamber, a gas supply unit supplying gas to the inside of the processing chamber, a high-frequency power source connected to at least the substrate support, and a control unit a plasma processing apparatus comprising: a gas supply channel configured to supply gas to the processing chamber; an orifice disposed in the gas supply channel; and the orifice in the gas supply channel a flow control valve arranged upstream of the gas supply channel, a primary valve arranged upstream of the flow control valve in the gas supply channel, and a secondary valve arranged downstream of the orifice in the gas supply channel a secondary-side valve, a secondary-side gas exhaust flow path branched between the orifice and the secondary-side valve in the gas supply flow path and connected to a secondary-side exhaust mechanism, and the secondary-side gas exhaust.
- a substrate plasma processing method using a gas control system wherein the gas control system comprises a gas supply channel configured to supply a gas to a processing chamber housing the substrate; and the gas supply channel.
- an orifice arranged in the gas supply channel; a flow control valve arranged upstream of the orifice in the gas supply channel; a primary valve arranged upstream of the flow control valve in the gas supply channel; A secondary side valve arranged downstream of the orifice in the gas supply channel, and a secondary side exhaust mechanism branched between the orifice and the secondary side valve in the gas supply channel and connected to a secondary side exhaust mechanism.
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Abstract
Description
一実施形態において、プラズマ処理システムは、図3に示すようにプラズマ処理装置1及び制御部2を含む。プラズマ処理システムは、基板処理システムの一例であり、プラズマ処理装置1は、基板処理装置の一例である。プラズマ処理装置1は、プラズマ処理チャンバ10、基板支持部11及びプラズマ生成部12を含む。プラズマ処理チャンバ10は、プラズマ処理空間を有する。また、プラズマ処理チャンバ10は、少なくとも1つのガスをプラズマ処理空間に供給するための少なくとも1つのガス供給口と、プラズマ処理空間からガスを排出するための少なくとも1つのガス排出口とを有する。ガス供給口は、後述するガス供給部20に接続され、ガス排出口は、後述する排気システム40に接続される。基板支持部11は、プラズマ処理空間内に配置され、基板を支持するための基板支持面を有する。
続いて、上述したプラズマ処理装置1の一例として、容量結合型のプラズマ処理装置1の構成例について説明する。図4はプラズマ処理装置1の構成の概略を示す縦断面図である。
また同様に、図4においては、それぞれの流量制御ユニット110a~110eに対応して配置される各種部材の構成は同一であるため、各種部材における付番のa~eを省略している。すなわち、図4に記載の各種部材は、流量制御ユニット110a~110eの少なくともいずれかに対応して配置されているものとする。
また同様に、以下の説明においては、流量制御ユニット110a~110e、及び対応して配置される各種部材の付番のa~eを省略して説明を行う場合がある。
図4及び図5に示すように、それぞれの流量制御器111c、111m、111eは、それぞれに対応のガス供給流路としての二次側供給管140c、140m、140eを介して、対応するシャワーヘッド13のガス供給口14c、14m、14eのいずれかに接続されている。また、二次側供給管140にはそれぞれに対応する二次側バルブ141が配置され、かかる二次側バルブ141の開閉により、それぞれの流量制御器111からシャワーヘッド13へのガスの供給を任意に切り替え可能に構成されている。なお、二次側バルブ141としては例えばエアオペバルブや電磁バルブ等、任意の種類のバルブを用いることができるが、ガス供給に係る応答性を向上させる観点からは、例えば電磁バルブが用いられることが好ましい。本実施形態に係るプラズマ処理装置1においては、他のバルブ(例えば一次側バルブ121、一次側排気バルブ132又は後述の二次側排気バルブ152)についても電磁バルブ化することができるが、このように二次側バルブ141を電磁バルブ化することで、ガス供給に係る応答性を特に好適に向上できる。
電源30は、少なくとも1つのインピーダンス整合回路を介してプラズマ処理チャンバ10に結合されるRF電源31を含む。RF電源31は、ソースRF信号及びバイアスRF信号のような少なくとも1つのRF信号(RF電力)を、基板支持部11の導電性部材(下部電極)及び/又はシャワーヘッド13の導電性部材(上部電極)に供給するように構成される。これにより、プラズマ処理空間10sに供給された少なくとも1つの処理ガスからプラズマが形成される。従って、RF電源31は、プラズマ生成部12の少なくとも一部として機能し得る。また、バイアスRF信号を下部電極に供給することにより、基板Wにバイアス電位が発生し、形成されたプラズマ中のイオン成分を基板Wに引き込むことができる。
続いて、以上のように構成されたウェハ処理システムを用いて行われる第1の実施形態に係るガス供給方法(ガス制御方法)としてのウェハ処理方法について説明する。なお以下の説明においては、プラズマ処理チャンバ10内の処理対象の基板Wに対してエッチング処理(ALE:Atomic Layer Etching)が実行される場合を例に説明を行うが、基板Wに実行されるガス処理の種類は下記実施例に限定されるものではない。例えばプラズマ処理チャンバ10においては、エッチング処理に代え、上述のように成膜処理、クリーニング処理等の任意のガス処理を行い得る。
また、一例においてプラズマ処理チャンバ10内に供給されるアルゴンガスの供給流量は、ガスソース100aから供給されるCF系ガス、及びガスソース100bから供給される酸素ガスの供給流量と比較して大きい。
ステップSt1では、プラズマ処理チャンバ10内に供給されたCF系ガスにより、基板W上にCF系デポを形成する(以下、「デポジション工程」という場合がある。)。
ステップSt2では、一次側バルブ121a及び二次側バルブ141aが閉止されることで、流量制御器111、一次側供給管120及び二次側供給管140の内部が外部から縁切りされる。これにより、一次側供給管120内のガスがオリフィスを介して二次側供給管140内へと移動し、一次側供給管120と二次側供給管140の内部圧力が略一致して平衡状態となる。
ステップSt4では、一次側バルブ121a及び二次側バルブ141aが閉止されることで、流量制御器111、一次側供給管120及び二次側供給管140の内部が外部から縁切りされる。これにより、一次側供給管120内のガスがオリフィスを介して二次側供給管140内へと移動し、一次側供給管120と二次側供給管140の内部圧力が略一致して平衡状態となる。
ステップSt6では、プラズマ処理チャンバ10内に供給されたO2ガスに由来するプラズマを生成し、基板Wをエッチングする(以下、「エッチング工程」という場合がある。)。
ステップSt7では、一次側バルブ121b及び二次側バルブ141bが閉止されることで、流量制御器111、一次側供給管120及び二次側供給管140の内部が外部から縁切りされる。これにより、一次側供給管120内のガスがオリフィスを介して二次側供給管140内へと移動し、一次側供給管120と二次側供給管140の内部圧力が略一致して平衡状態となる。
ステップSt9では、一次側バルブ121b及び二次側バルブ141bが閉止されることで、流量制御器111、一次側供給管120及び二次側供給管140の内部が外部から縁切りされる。これにより、一次側供給管120内のガスがオリフィスを介して二次側供給管140内へと移動し、一次側供給管120と二次側供給管140の内部圧力が略一致して平衡状態となる。
これにより、プロセスの再開に際してガスソース100からのガスの充填に要する時間を短縮できると共に、プラズマ処理チャンバ10内にガスが急激に流れ込むことを抑制し、図1に示したスパイクSの発生をさらに適切に抑制できる。
図12は、以上の実施形態にかかるプラズマ処理装置1の効果を検討するための比較結果を示すグラフであって、オリフィス113の上流側に接続された排気ユニット131のみを用いて排気を行った場合(図1に示したType1)との比較結果を示す。なお、図12に示す比較例(Type1)及び実施例においては、いずれも流量制御器111に対して短時間(一例として1sec程度)の真空引きを行った。
この点、本実施形態においては、オリフィス113の下流側に接続された排気ユニット151をさらに用いて排気を行うことにより、流量制御器111の真空引き時間が短い場合(本実施例においては1sec程度)であっても、スパイクSの発生を抑制できることがわかった。
すなわち、本発明者らは、上記した第1の排気工程(ステップSt3)及び第2の排気工程(ステップSt9)での真空引きに要する時間を0.5秒以下にまで短縮できることを知見した。
すなわち、流量制御器111の内部における一のガスと他のガスの混合を抑制するため、従来は一のガスの排気を60秒程度行う必要があったところ、オリフィス113の下流側での真空引きを更に行うことで、かかる一のガスの排気時間を2秒程度に短縮できることを知見した。換言すれば、流量制御器111の真空引きに係る立下り応答性を向上できることを知見した。
ここで、上記したように、基板Wのエッチングプロセスにおいてはプラズマ処理チャンバの内部におけるプラズマの立上げ時間を短く(以下、「立上り応答性を向上」という。)することが重要になる。しかしながら、上記実施形態で示したように、プロセスの再開に際して流量制御器111の真空引き(第1の排気工程及び第2の排気工程)を行った場合、内部供給管112と二次側供給管140の内部圧力に差がある状態で二次側バルブ141を開放すると、例えば二次側供給管140から内部供給管112へのArガスの流入等が発生し、流量制御器111からプラズマ処理チャンバ10へのCF系ガスの供給に遅延が生じ、エッチング処理の立ち上がり応答性が悪化する場合がある。
上記したように、プラズマ処理チャンバ10内に供給されるアルゴンガスの供給流量は、ガスソース100aから供給されるCF系ガス、及びガスソース100bから供給される酸素ガスの供給流量と比較して大きく設定される。このため、二次側バルブ141の開放先である二次側供給管140の内部圧力が上がっているため、この立上り応答性の悪化が特に懸念される。
以下、このプレチャージプロセスを含む、第2の実施形態に係るウェハ処理方法について、図面を参照して説明する。なお、以下の説明において、上記実施形態と実質的に同一の動作(ステップ)については、詳細な説明を省略する。
またこれと同様に、図16に記載の一次側バルブ121、一次側排気バルブ132、二次側バルブ141及び二次側排気バルブ152は、それぞれガスソース100a、100bに対応する一次側バルブ121a、121b、一次側排気バルブ132a、132b、二次側バルブ141a、141bを含むものとする。
なお、プラズマ処理チャンバ10内に供給されるArガスは、他のガス供給部160に代えて、上記実施形態等同様にガスソース100cから供給されてもよい。
内部供給管112の内部圧力が二次側供給管140の内部圧力と比較して80%未満である場合、上述のようにエッチング処理の立ち上がり応答性が悪化するおそれがある。
また、内部供給管112の内部圧力が二次側供給管140の内部圧力と比較して120%を超える場合、内部供給管112からプラズマ処理チャンバ10へとCF系ガスが一気に流入し、上記したスパイクS発生の原因となるおそれがある。
なお、第1の排気工程(ステップSp4)の終了後には、流量制御器111aのコントロールバルブ116及び流量制御ユニット110aの二次側バルブ141aを開放することで、流量制御器111a内の残留ガスが適切に排気されたことを確認してもよい。
内部供給管112の内部圧力が二次側供給管140の内部圧力と比較して80%未満である場合、上述のようにエッチング処理の立ち上がり応答性が悪化するおそれがある。
また、内部供給管112の内部圧力が二次側供給管140の内部圧力と比較して120%を超える場合、内部供給管112からプラズマ処理チャンバ10へとO2ガスが一気に流入し、上記したスパイクS発生の原因となるおそれがある。
なお、第2の排気工程(ステップSp9)の終了後には、流量制御器111bのコントロールバルブ116及び流量制御ユニット110bの二次側バルブ141bを開放することで、流量制御器111b内の残留ガスが適切に排気されたことを確認してもよい。
このように、一の流量制御ユニット110でガスの供給を行っている際に、ガス供給を行っていない他の流量制御ユニット110の排気工程を同時に行うことで、エッチング処理に係るスループットを向上できる。
具体的には、図18に示すように、例えば一の流量制御ユニット110に対して1種類のガスのみを供給される(1系統の構造を有する)場合には、第1のプロセス又は第2のプロセスの完了後、流量制御ユニット110の内部圧力に応じて排気工程を省略して直ちにプレチャージプロセスを行ってもよい。より具体的には、例えば流量制御ユニット110の内部圧力が二次側供給管140の内部圧力と略一致し、次のプロセス開始時において適切にガスの供給を開始できると判断される場合には、排気工程を省略してもよい。
また例えば、図18に示すように、例えば他のガス供給部160から供給されるArガスの流量が小さく、二次側供給管140の内部圧力が低い場合には、排気プロセスの完了後、プレチャージプロセスを省略して処理プロセスを開始してもよい。
以上、第2の実施形態にかかるプラズマ処理装置1によれば、プラズマ処理チャンバ10に対するガスの供給に先立って、流量制御器111にガスを充填し、内部供給管112を昇圧(プレチャージプロセス)する。プレチャージプロセス後の内部供給管112の内部圧力(より具体的には二次側内部供給管112bの内部圧力P2)は、一例として二次側供給管140の内部圧力と略一致する圧力、好ましくは二次側供給管140の内部圧力の80~120%程度の圧力である。
これにより、内部供給管112と二次側供給管140の内部圧力の差分を小さくし、二次側バルブ141の開放時におけるアルゴンガスの流入やスパイクSの発生を抑制し、エッチング処理に際しての立ち上がり応答性の悪化を抑制できる。
図中、実線はO2ガスを0.9sccmで0.5秒のプレチャージを行った場合(実施例1)、破線はO2ガスを0.9sccmで0.2秒のプレチャージを行った場合(実施例2)、一点鎖線はプレチャージを行わなかった場合(比較例)、の結果をそれぞれ示している。
なお、本検討においては、実施例1、2及び比較例のいずれの場合においても、他のガス供給部160から950sccmでArガスの供給を継続した。
またこの時、プレチャージプロセスを行う時間が長いほど、立ち上がり応答性を向上できることがわかった(すなわち、図20に示すグラフの傾きを大きくできることがわかった)。これは、一定流量でガスの供給を行う場合、プレチャージプロセスを行う時間が長いほど、内部供給管112と二次側供給管140の内部圧力の差分が小さくなったことに起因するものと考えられる。
かかる場合、二次側バルブ141の開放のタイミングは、一例としてステップSp0における他のガス供給部160からのArガスの供給開始のタイミングを基準として決定し得る。
すなわち、例えば二次側バルブ141の開放のタイミングで内部供給管112の内部圧力が所望の値よりも大きくなると予測される場合にはコントロールバルブ116の開度を小さくするように制御する。また、例えば二次側バルブ141の開放のタイミングで内部供給管112の内部圧力が所望の値よりも小さくなると予測される場合にはコントロールバルブ116の開度を大きくするように制御する。
具体的には、例えば内部供給管112の内部圧力に代えて、又は加えて、流量制御器111から供給するガスの流量、ガスの供給時間、流量制御器111の内部温度、又は二次側供給管140を流れるArガスの流量、コントロールバルブ116の機差等をパラメータとして条件を設定してもよい。
プラズマ処理の開始に先立って予め定められたモデルレシピに限定して上記プレチャージプロセスを実行し得る。具体的には、上述のように予めプレチャージにおけるガスの供給流量や供給時間等の条件を決定し、決定された条件(例えばガス供給流量)に沿ってプレチャージプロセスを実行し得る。
Phase1によれば、予め立ち上がり応答性を向上し、且つスパイクの発生しない条件を設定し、プレチャージプロセスを行うことで、適切に基板Wに対するプラズマ処理を行うことができる。
キャリアガスとしてのArガスの流量、シャワーヘッド13の温度、又はシャワーヘッド13の各ガス供給口14c、14m、14eに供給されるガスの流量比等から計算、又は圧力センサ115により内部圧力P2を測定することで、適切な条件(例えばガス供給流量、充填量)で上記プレチャージプロセスを自動で実行し得る。
Phase2によれば、各種測定結果や計算結果に基づいてプレチャージプロセスを適宜制御する。これにより、流量制御器111やプラズマ処理チャンバ10の内部状態に追従してプレチャージプロセスを適宜変更できるため、phase1と比較してより適切なプラズマ処理結果を得ることができる。
内部供給管112の内部圧力(より具体的には二次側内部供給管112bの内部圧力P2)を制御する機構を備えた流量制御ユニット110、又は、流量制御器111を用いて上記プレチャージプロセスを実行し得る。
Phase3によれば、バルブを開けるまでに、充填量を厳格に制御する必要がなくなるという利点がある。また、内部圧力制御機構によって制御を統一できるため、流量制御ユニット110、又は流量制御器111の個体差による影響や、制御の再現バラつきによる影響を緩和することができる。
ここで、本開示の技術に係るプラズマ処理装置1においては、上述したように基板Wに対して第1のプロセス及び第2のプロセスを含むサイクルが繰り返し交互に実行される。このため、それぞれの流量制御器111においては、プラズマ処理チャンバ10へのガスの供給と停止(排気ユニット151による排気)が繰り返し実行される。
すなわち、従来、繰り返し実行されるサイクル毎に実行されていた流量制御器111によるガス流量の制御を省略することができ、瞬時に所望の一定流量でプラズマ処理チャンバ10へのガスの供給を再開することができる。
しかしながら、本発明者らが検討を行ったところ、図21に示すように二次側供給管140における二次側排気管150との接続部と二次側バルブ141の間、及び二次側排気管150における二次側排気バルブ152の上流側、にそれぞれチャンバ側オリフィスとしてのオリフィス180、排気側オリフィスとしてのオリフィス181を設けることで、極小流量でのガス供給ができる可能性を見出した。
例えば、オリフィス180、181を設けることに代え、二次側バルブ141及び二次側排気バルブ152を、それぞれ開度を調節可能なバルブ、例えばニードルバルブ等により構成してもよい。
ただし、かかる従来の方法により自己診断を行う場合、プラズマ処理チャンバ側から流量制御器の排気を行うため、当該オリフィスの自己診断とプラズマ処理チャンバにおける基板Wの処理とを並行して実行することができない。
このため、オリフィス113の自己診断に際して基板Wの処理を止める必要がなく、プラズマ処理装置1における生産性を向上できる。また、このように基板Wの処理とは独立して自己診断ができることから、プラズマ処理チャンバ10で処理される基板W枚葉の処理毎、又は図9等で示した基板Wの処理のステップ毎など、任意のタイミングで自己診断を実行でき、ガス流量の算出不良に起因する基板Wのスクラップ数を適切に低減できる。
また、流量制御器111内のガスが十分に排気され、更に流量制御器111の内部が真空引きされた後に、2つの圧力センサ114、115による測定結果を相互に比較することで、これら2つの圧力センサ114、115に0点ズレが生じているか否かを確認できる。
(1)
処理チャンバ内にガスを供給するガス供給システムであって、前記処理チャンバに対して独立してガスを供給可能に構成される複数のガス供給流路と、複数の前記ガス供給流路のそれぞれに配置される流量制御器と、前記ガス供給流路における前記流量制御器の上流側に配置される一次側バルブと、前記ガス供給流路における前記流量制御器と前記一次側バルブとの間で分岐して一次側排気機構に接続される一次側ガス排気流路と、前記一次側ガス排気流路に配置される一次側排気バルブと、前記ガス供給流路における前記流量制御器の下流側に配置される二次側バルブと、前記ガス供給流路における前記流量制御器と前記二次側バルブとの間で分岐して二次側排気機構に接続される二次側ガス排気流路と、前記二次側ガス排気流路に配置される二次側排気バルブと、を有し、前記流量制御器は、前記一次側バルブと前記二次側バルブとに接続されるコントロールバルブと、前記コントロールバルブと前記二次側バルブとの間に配置される制御側オリフィスと、を有する、ガス供給システム。
(2)
前記二次側ガス排気流路における前記二次側排気バルブの上流側に配置される排気側オリフィスと、前記ガス供給流路における前記二次側ガス排気流路との接続部と前記二次側バルブとの間に配置されるチャンバ側オリフィスと、を更に有し、前記制御側オリフィスは最小加工限界の孔径を有し、前記排気側オリフィスと前記チャンバ側オリフィスの孔径は互いに異なる、前記(1)に記載のガス供給システム。
(3)
前記排気側オリフィスと前記チャンバ側オリフィスの孔径の大きさの比率を、前記制御側オリフィスから出力されるガスの流量に対する、前記処理チャンバに供給する目標流量の比率に基づいて決定する、前記(2)に記載のガス供給システム。
(4)
複数の前記ガス供給流路は、前記二次側バルブの下流側において合流した後に前記処理チャンバに接続される、前記(1)~前記(3)のいずれかに記載のガス供給システム。
(5)
前記ガス供給流路は、前記処理チャンバの内部における複数の異なる位置に対して独立してガスを供給する複数の分岐供給管を有し、複数の前記分岐供給管のそれぞれには、独立して前記流量制御器、前記二次側バルブ、前記二次側ガス排気流路及び前記二次側排気バルブが接続される、前記(1)~前記(4)のいずれかに記載のガス供給システム。
(6)
前記ガス供給流路は、前記一次側ガス排気流路との接続部と前記流量制御器との間において複数の前記分岐供給管に分岐する、前記(5)に記載のガス供給システム。
(7)
複数の前記分岐供給管は、前記処理チャンバの内部に導入された基板の、少なくともエッジ領域及びセンタ領域に対して独立して前記ガスを供給可能に構成される、前記(5)又は前記(6)に記載のガス供給システム。
(8)
基板を処理するプラズマ処理装置であって、処理チャンバと、前記処理チャンバの内部に配設される基板支持体と、前記処理チャンバの内部にガスを供給する、前記(1)~前記(7)のいずれかに記載のガス供給システムと、前記処理チャンバ内のガスからプラズマを生成するように構成されるプラズマ生成部と、を備える、プラズマ処理装置。
(9)
ガス供給システムを用いたガス供給方法であって、前記ガス供給システムは、処理チャンバに対して独立してガスを供給可能に構成される複数のガス供給流路と、複数の前記ガス供給流路のそれぞれに配置される流量制御器と、前記ガス供給流路における前記流量制御器の上流側に配置される一次側バルブと、前記ガス供給流路における前記流量制御器と前記一次側バルブとの間で分岐して一次側排気機構に接続される一次側ガス排気流路と、前記一次側ガス排気流路に配置される一次側排気バルブと、前記ガス供給流路における前記流量制御器の下流側に配置される二次側バルブと、前記ガス供給流路における前記流量制御器と前記二次側バルブとの間で分岐して二次側排気機構に接続される二次側ガス排気流路と、前記二次側ガス排気流路に配置される二次側排気バルブと、を有し、前記流量制御器は、前記一次側バルブと前記二次側バルブとに接続されるコントロールバルブと、前記コントロールバルブと前記二次側バルブとの間に配置される制御側オリフィスと、を有し、(A)少なくとも1つの前記ガス供給流路の前記一次側バルブ及び前記二次側バルブを開放して、前記処理チャンバの内部にガスを供給する工程と、(B)前記(A)工程で開放した前記一次側バルブ及び前記二次側バルブを閉塞する工程と、(C)前記(A)工程で前記処理チャンバの内部にガスを供給した前記少なくとも1つの前記ガス供給流路の前記一次側排気バルブ及び前記二次側排気バルブを開放して、前記少なくとも1つの前記ガス供給流路からガスを排気する工程と、(D)前記(C)工程で開放した前記一次側排気バルブ及び前記二次側排気バルブを閉塞する工程と、を含む、ガス供給方法。
(10)
(E)前記一次側排気バルブ及び前記二次側排気バルブを閉塞した後、前記二次側バルブを開放して、前記流量制御器の内部に残留するガスを確認する工程、を更に含む、前記(9)に記載のガス供給方法。
(11)
少なくとも前記(A)工程~前記(D)工程を含むサイクルを繰り返し実行する、前記(9)又は前記(10)に記載のガス供給方法。
(12)
ガス供給システムを用いたガス供給方法であって、前記ガス供給システムは、処理チャンバに対して独立してガスを供給可能に構成される複数のガス供給流路と、複数の前記ガス供給流路のそれぞれに配置される流量制御器と、前記ガス供給流路における前記流量制御器の上流側に配置される一次側バルブと、前記ガス供給流路における前記流量制御器と前記一次側バルブとの間で分岐して一次側排気機構に接続される一次側ガス排気流路と、前記一次側ガス排気流路に配置される一次側排気バルブと、前記ガス供給流路における前記流量制御器の下流側に配置される二次側バルブと、前記ガス供給流路における前記流量制御器と前記二次側バルブとの間で分岐して二次側排気機構に接続される二次側ガス排気流路と、前記二次側ガス排気流路に配置される二次側排気バルブと、を有し、前記流量制御器は、前記一次側バルブと前記二次側バルブとに接続されるコントロールバルブと、前記コントロールバルブと前記二次側バルブとの間に配置される制御側オリフィスと、を有し、(A)前記ガス供給流路の前記一次側バルブ及び前記二次側バルブを開放するとともに、前記一次側排気バルブ及び前記二次側排気バルブを閉塞して、前記処理チャンバの内部にガスを供給する工程と、(B)前記ガス供給流路の前記一次側バルブ及び前記二次側排気バルブを開放するとともに、前記一次側排気バルブ及び前記二次側バルブを閉塞して、前記ガス供給流路からガスを排気する工程と、を交互に繰り返し実行する、ガス供給方法。
(13)
前記流量制御器は少なくとも1つの圧力センサを有し、複数の前記ガス供給流路のうち、少なくとも1つの前記ガス供給流路から前記処理チャンバの内部にガスを供給することと、複数の前記ガス供給流路のうち、他の前記ガス供給流路に配置された前記流量制御器の自己診断を行うことと、を含み、前記流量制御器の自己診断に際しては、他の前記ガス供給流路に配置された前記流量制御器の内部にガスを充填することと、他の前記ガス供給流路の前記二次側排気バルブを開放して、前記流量制御器の内部に充填されたガスを排気することと、充填された前記ガスの排気に際しての前記流量制御器の内部圧力の降下特性の実測値を、当該流量制御器の出荷時における降下特性と比較することと、を実行する、前記(9)~前記(12)のいずれかに記載のガス供給方法。
(14)
前記流量制御器は複数の圧力センサを有し、前記流量制御器の自己診断に際しては、前記ガスが充填された後の前記流量制御器の内部圧力と、充填された前記ガスが排気された後の前記流量制御器の内部圧力とを、複数の前記圧力センサで測定することと、複数の前記圧力センサのそれぞれで測定された内部圧力の測定値を相互に比較することと、を更に実行する、前記(13)に記載のガス供給方法。
処理チャンバ内へのガスの供給を制御するガス制御システムであって、前記処理チャンバに対して独立してガスを供給可能に構成される複数のガス供給流路と、複数の前記ガス供給流路のそれぞれに配置されるオリフィスと、前記ガス供給流路における前記オリフィスの上流側に配置される一次側バルブと、前記ガス供給流路における前記オリフィスと前記一次側バルブとの間で分岐して一次側排気機構に接続される一次側ガス排気流路と、前記一次側ガス排気流路に配置される一次側排気バルブと、前記ガス供給流路における前記オリフィスの下流側に配置される二次側バルブと、前記ガス供給流路における前記オリフィスと前記二次側バルブとの間で分岐して二次側排気機構に接続される二次側ガス排気流路と、前記二次側ガス排気流路に配置される二次側排気バルブと、前記一次側バルブ、前記一次側排気バルブ、前記二次側バルブ及び前記二次側排気バルブの開度を独立して制御する制御部と、を有し、前記制御部は、前記一次側バルブ及び前記二次側バルブを開放し、かつ前記一次側排気バルブ及び前記二次側排気バルブを閉塞することで前記処理チャンバ内へガスを供給する工程と、前記一次側バルブ及び前記二次側バルブを閉塞し、かつ前記一次側排気バルブ及び前記二次側排気バルブを開放することで前記ガス供給流路の内部を排気する工程と、を交互に繰り返し実行する制御と、前記ガス供給流路の内部の排気に際して、当該ガス供給流路の内部圧力が少なくとも前記処理チャンバの内部圧力よりも低くなるように、前記一次側排気機構及び前記二次側排気機構を動作させる制御と、を実行する、ガス制御システム。
(16)
処理チャンバ内へのガスの供給を制御するガス制御システムであって、前記処理チャンバに対してガスを供給可能に構成されるガス供給流路と、前記ガス供給流路に配置されるオリフィスと、前記ガス供給流路における前記オリフィスの上流側に配置される一次側バルブと、前記ガス供給流路における前記オリフィスと前記一次側バルブとの間で分岐して一次側排気機構に接続される一次側ガス排気流路と、前記一次側ガス排気流路に配置される一次側排気バルブと、前記ガス供給流路における前記オリフィスの下流側に配置される二次側バルブと、前記ガス供給流路における前記オリフィスと前記二次側バルブとの間で分岐して二次側排気機構に接続される二次側ガス排気流路と、前記二次側ガス排気流路に配置される二次側排気バルブと、前記一次側バルブ、前記一次側排気バルブ、前記二次側バルブ及び前記二次側排気バルブの開度を独立して制御する制御部と、を有し、前記制御部は、前記一次側バルブ及び前記二次側バルブを開放し、かつ前記一次側排気バルブ及び前記二次側排気バルブを閉塞することで前記処理チャンバ内へガスを供給する工程と、前記一次側バルブ及び前記二次側バルブを閉塞し、かつ前記一次側排気バルブ及び前記二次側排気バルブを開放することで前記ガス供給流路の内部を排気する工程と、を交互に繰り返し実行する制御と、前記ガス供給流路の内部の排気に際して、当該ガス供給流路の内部に前記ガスが少なくとも残留するように、前記一次側排気機構及び前記二次側排気機構を動作させる制御と、を実行し、排気後の前記ガス供給流路の内部圧力は100Torr以下である、ガス制御システム。
(17)
前記処理チャンバに対して独立してガスを供給可能に構成される複数のガス供給流路を含み、前記オリフィス、前記一次側バルブ、前記一次側排気バルブ、前記二次側バルブ及び前記二次側排気バルブは、複数の前記ガス供給流路のそれぞれに配置される、前記(16)に記載のガス制御システム。
(18)
複数の前記ガス供給流路は、前記二次側バルブの下流側において合流した後に前記処理チャンバに接続される、前記(15)又は前記(17)に記載のガス制御システム。
(19)
前記ガス供給流路は、前記処理チャンバの内部における複数の異なる位置に対して独立して前記ガスを供給する複数の分岐供給管を有し、複数の前記分岐供給管のそれぞれには、独立して前記二次側バルブ、前記二次側ガス排気流路及び前記二次側排気バルブが接続される、前記(15)~前記(18)のいずれかに記載のガス制御システム。
(20)
前記ガス供給流路は、前記一次側ガス排気流路との接続部分よりも下流側において複数の前記分岐供給管に分岐する、請求項5に記載のガス制御システム。
(21)
複数の前記分岐供給管は、前記処理チャンバの内部に導入された基板の、少なくともエッジ領域及びセンタ領域に対して独立して前記ガスを供給可能に構成される、前記(19)又は前記(20)に記載のガス制御システム。
(22)
前記処理チャンバの内部に供給する前記ガスの流量を制御する流量制御器を更に備え、
前記オリフィスは前記流量制御器の内部に配置され、前記一次側バルブ、前記一次側排気バルブ、前記二次側バルブ及び前記二次側排気バルブは前記流量制御器の外部に配置される、前記(15)~前記(21)のいずれかに記載のガス制御システム。
(23)
前記流量制御器は、前記ガス供給流路における前記オリフィスの上流側に配置される開度調整バルブを更に備える、前記(22)に記載のガス制御システム。
(24)
前記オリフィス、前記一次側バルブ、前記一次側排気バルブ、前記二次側バルブ及び前記二次側排気バルブを一体に接続する取付部材を更に有する、前記(15)~前記(23)のいずれかに記載のガス制御システム。
(25)
前記処理チャンバ内へ供給される前記ガスの流量は0.1sccm~10sccmである、前記(15)~前記(24)のいずれかに記載のガス制御システム。
(26)
前記制御部は、前記処理チャンバの内部に導入された基板に堆積物を形成するデポジションプロセスと、前記基板をエッチングするエッチングプロセスと、を交互に繰り返し実行する制御を実行し、前記デポジションプロセス及び前記エッチングプロセスは、それぞれ前記処理チャンバ内へガスを供給する工程と、前記ガス供給流路の内部を排気する工程と、を有し、前記デポジションプロセス及び前記エッチングプロセスを含む1サイクルの処理時間は1秒~10秒である、前記(15)~前記(25)のいずれかに記載のガス制御システム。
(27)
処理チャンバと、前記処理チャンバの内部に配設される基板支持部と、前記処理チャンバの内部にガスを供給するガス供給部と、少なくとも前記基板支持部に接続される高周波電源と、制御部と、を備えるプラズマ処理装置であって、前記ガス供給部は、前記処理チャンバに対して独立してガスを供給可能に構成される複数のガス供給流路と、複数の前記ガス供給流路のそれぞれに配置されるオリフィスと、前記ガス供給流路における前記オリフィスの上流側に配置される一次側バルブと、前記ガス供給流路における前記オリフィスと前記一次側バルブとの間で分岐して一次側排気機構に接続される一次側ガス排気流路と、前記一次側ガス排気流路に配置される一次側排気バルブと、前記ガス供給流路における前記オリフィスの下流側に配置される二次側バルブと、前記ガス供給流路における前記オリフィスと前記二次側バルブとの間で分岐して二次側排気機構に接続される二次側ガス排気流路と、前記二次側ガス排気流路に配置される二次側排気バルブと、を有するガス制御システムを有し、前記制御部は、前記一次側バルブ及び前記二次側バルブを開放し、かつ前記一次側排気バルブ及び前記二次側排気バルブを閉塞することで前記処理チャンバ内へガスを供給する工程と、前記一次側バルブ及び前記二次側バルブを閉塞し、かつ前記一次側排気バルブ及び前記二次側排気バルブを開放することで前記ガス供給流路の内部を排気する工程と、を交互に繰り返し実行する制御と、前記ガス供給流路の内部の排気に際して、当該ガス供給流路の内部圧力が少なくとも前記処理チャンバの内部圧力よりも低くなるように、前記一次側排気機構及び前記二次側排気機構を動作させる制御と、を実行する、プラズマ処理装置。
(28)
ガス制御システムを用いたガス制御方法であって、前記ガス制御システムは、処理チャンバに対して独立してガスを供給可能に構成される複数のガス供給流路と、複数の前記ガス供給流路のそれぞれに配置されるオリフィスと、前記ガス供給流路における前記オリフィスの上流側に配置される一次側バルブと、前記ガス供給流路における前記オリフィスと前記一次側バルブとの間で分岐して一次側排気機構に接続される一次側ガス排気流路と、
前記一次側ガス排気流路に配置される一次側排気バルブと、前記ガス供給流路における前記オリフィスの下流側に配置される二次側バルブと、前記ガス供給流路における前記オリフィスと前記二次側バルブとの間で分岐して二次側排気機構に接続される二次側ガス排気流路と、前記二次側ガス排気流路に配置される二次側排気バルブと、を有し、(A)複数の前記ガス供給流路から少なくとも1つが選択される、第1のガス供給流路群の前記一次側バルブ及び前記二次側バルブを開放し、かつ当該第1のガス供給流路群の前記一次側排気バルブ、前記二次側排気バルブ、及び他のガス供給流路の前記一次側バルブ、前記二次側バルブ、前記一次側排気バルブ及び前記二次側排気バルブを閉塞する工程と、(B)前記第1のガス供給流路群における前記一次側バルブ及び前記二次側バルブを閉塞した後、当該第1のガス供給流路群の前記一次側排気バルブ、前記二次側排気バルブを開放する工程と、(C)前記第1のガス供給流路群における前記一次側排気バルブ、前記二次側排気バルブを閉塞した後、前記他のガス龍供給流路から少なくとも1つが選択される、第2のガス供給流路群の前記一次側バルブ及び前記二次側バルブを開放する工程と、(D)前記第2のガス供給流路群における前記一次側バルブ及び前記二次側バルブを閉塞した後、当該第2のガス供給流路群の前記一次側排気バルブ、前記二次側排気バルブを開放する工程と、を含む、ガス制御方法。
(29)
前記(A)工程及び前記(B)工程を含む第1のプロセスと、前記(C)工程及び前記(D)工程を含む第2のプロセスと、を交互に繰り返し実行する、前記(28)に記載のガス制御方法。
処理チャンバ内へのガスの供給を制御するガス制御システムであって、前記処理チャンバに対してガスを供給可能に構成されるガス供給流路と、前記ガス供給流路に配置されるオリフィスと、前記ガス供給流路における前記オリフィスの上流側に配置される流量制御バルブと、前記ガス供給流路における前記流量制御バルブの上流側に配置される一次側バルブと、前記ガス供給流路における前記オリフィスの下流側に配置される二次側バルブと、前記ガス供給流路における前記オリフィスと前記二次側バルブとの間で分岐して二次側排気機構に接続される二次側ガス排気流路と、前記二次側ガス排気流路に配置される二次側排気バルブと、前記流量制御バルブ、前記一次側バルブ、前記二次側バルブ及び前記二次側排気バルブの開度を独立して制御する制御部と、を有し、前記制御部は、前記流量制御バルブ、前記一次側バルブ及び前記二次側バルブを開放し、かつ前記一次側排気バルブ及び前記二次側排気バルブを閉塞することで前記処理チャンバ内へガスを供給する工程と、前記流量制御バルブ、前記一次側バルブ及び前記二次側バルブを閉塞し、かつ前記一次側排気バルブ及び前記二次側排気バルブを開放することで前記ガス供給流路の内部を排気する工程と、を交互に繰り返し実行する制御と、前記ガスを供給する工程に際し、前記二次側バルブに先立って前記流量制御バルブ及び前記一次側バルブを開放し、前記オリフィスの下流側にガスを充填した後、前記二次側バルブを開放する制御と、を実行する、ガス制御システム。
(31)
前記制御部は、前記ガスを供給する工程に際し、前記オリフィスの下流側の圧力が予め定められた基準圧力まで昇圧された後、前記二次側バルブを開放する、前記(30)に記載のガス制御システム。
(32)
前記基準圧力は、前記二次側バルブの下流側の圧力の80%以上120%以下である、前記(31)に記載のガス制御システム。
(33)
前記制御部は、前記オリフィスの下流側の圧力、前記ガス供給流路を通流するガス流量、ガスの供給時間、前記ガス供給流路の内部温度、前記二次側バルブの下流側を通流する他のガスの流量、のうち少なくともいずれか1つのパラメータを用いて、前記二次側バルブの開放タイミングを決定する、前記(30)に記載のガス制御システム。
(34)
前記制御部は、前記オリフィスの下流側へのガスの充填に先立って決定された供給流量で、当該ガスの充填を実行する、前記(30)~前記(33)のいずれかに記載のガス制御システム。
(35)
前記ガス供給流路は、前記処理チャンバ内の異なる領域に対して独立してガスを供給可能に構成され、前記制御部は、前記二次側バルブの下流側を通流する他のガスの流量、前記処理チャンバの温度、前記異なる領域のそれぞれに供給されるガスの流量比、若しくは前記オリフィスの下流側の圧力、のうち少なくともいずれか1つのパラメータを用いて決定された供給流量で、当該ガスの充填を実行する、前記(30)~前記(33)のいずれかに記載のガス制御システム。
(36)
前記オリフィスの下流側の圧力を制御し、前記処理チャンバの内部に供給する前記ガスの流量を制御する流量制御器を備える、前記(30)~前記(33)のいずれかに記載のガス制御システム。
(37)
前記オリフィスは前記流量制御器の内部に配置される、前記(36)に記載のガス制御システム。
(38)
前記ガス供給流路における前記オリフィスと前記一次側バルブとの間で分岐して一次側排気機構に接続される一次側ガス排気流路と、前記一次側ガス排気流路に配置される一次側排気バルブと、を備える、前記(30)~前記(37)のいずれかに記載のガス制御システム。
(39)
前記処理チャンバに対して独立してガスを供給可能に構成される複数の前記ガス供給流路を備える、前記(30)~前記(38)のいずれかに記載のガス制御システム。
(40)
複数の前記ガス供給流路の各々には、それぞれ異なる種類のガスが独立して供給され、前記制御部は、前記ガス供給流路の内部圧力に応じて、当該ガス供給流路の内部を排気する工程を省略する制御を実行する、前記(39)に記載のガス制御システム。
(41)
処理チャンバと、前記処理チャンバの内部に配設される基板支持部と、前記処理チャンバの内部にガスを供給するガス供給部と、少なくとも前記基板支持部に接続される高周波電源と、制御部と、を備えるプラズマ処理装置であって、前記処理チャンバに対してガスを供給可能に構成されるガス供給流路と、前記ガス供給流路に配置されるオリフィスと、前記ガス供給流路における前記オリフィスの上流側に配置される流量制御バルブと、前記ガス供給流路における前記流量制御バルブの上流側に配置される一次側バルブと、前記ガス供給流路における前記オリフィスの下流側に配置される二次側バルブと、前記ガス供給流路における前記オリフィスと前記二次側バルブとの間で分岐して二次側排気機構に接続される二次側ガス排気流路と、前記二次側ガス排気流路に配置される二次側排気バルブと、有し、前記制御部は、前記流量制御バルブ、前記一次側バルブ及び前記二次側バルブを開放し、かつ前記一次側排気バルブ及び前記二次側排気バルブを閉塞することで前記処理チャンバ内へガスを供給する工程と、前記流量制御バルブ、前記一次側バルブ及び前記二次側バルブを閉塞し、かつ前記一次側排気バルブ及び前記二次側排気バルブを開放することで前記ガス供給流路の内部を排気する工程と、を交互に繰り返し実行する制御と、前記ガスを供給する工程に際し、前記二次側バルブに先立って前記流量制御バルブ及び前記一次側バルブを開放し、前記オリフィスの下流側にガスを充填した後、前記二次側バルブを開放する制御と、を実行する、プラズマ処理装置。
(42)
ガス制御システムを用いた基板のプラズマ処理方法であって、前記ガス制御システムは、前記基板を収容する処理チャンバに対してガスを供給可能に構成されるガス供給流路と、前記ガス供給流路に配置されるオリフィスと、前記ガス供給流路における前記オリフィスの上流側に配置される流量制御バルブと、前記ガス供給流路における前記流量制御バルブの上流側に配置される一次側バルブと、前記ガス供給流路における前記オリフィスの下流側に配置される二次側バルブと、前記ガス供給流路における前記オリフィスと前記二次側バルブとの間で分岐して二次側排気機構に接続される二次側ガス排気流路と、前記二次側ガス排気流路に配置される二次側排気バルブと、有し、(A)前記流量制御バルブ、前記一次側バルブ及び前記二次側バルブを開放し、かつ前記一次側排気バルブ及び前記二次側排気バルブを閉塞することで前記処理チャンバ内へガスを供給する工程と、(B)前記流量制御バルブ、前記一次側バルブ及び前記二次側バルブを閉塞し、かつ前記一次側排気バルブ及び前記二次側排気バルブを開放することで前記ガス供給流路の内部を排気する工程と、を交互に繰り返し実行し、前記(B)工程に際し、前記二次側バルブに先立って前記流量制御バルブ及び前記一次側バルブを開放し、前記オリフィスの下流側にガスを充填した後、前記二次側バルブを開放する、プラズマ処理方法。
20 ガス供給部
111 流量制御器
112 内部供給管
113 オリフィス
116 コントロールバルブ
120 一次側供給管
121 一次側バルブ
130 一次側排気管
131 排気ユニット
132 一次側排気バルブ
140 二次側供給管
141 二次側バルブ
150 二次側排気管
151 排気ユニット
152 二次側排気バルブ
Claims (20)
- 処理チャンバ内にガスを供給するガス供給システムであって、
前記処理チャンバに対して独立してガスを供給可能に構成される複数のガス供給流路と、
複数の前記ガス供給流路のそれぞれに配置される流量制御器と、
前記ガス供給流路における前記流量制御器の上流側に配置される一次側バルブと、
前記ガス供給流路における前記流量制御器と前記一次側バルブとの間で分岐して一次側排気機構に接続される一次側ガス排気流路と、
前記一次側ガス排気流路に配置される一次側排気バルブと、
前記ガス供給流路における前記流量制御器の下流側に配置される二次側バルブと、
前記ガス供給流路における前記流量制御器と前記二次側バルブとの間で分岐して二次側排気機構に接続される二次側ガス排気流路と、
前記二次側ガス排気流路に配置される二次側排気バルブと、を有し、
前記流量制御器は、
前記一次側バルブと前記二次側バルブとに接続されるコントロールバルブと、
前記コントロールバルブと前記二次側バルブとの間に配置される制御側オリフィスと、を有する、ガス供給システム。 - 前記二次側ガス排気流路における前記二次側排気バルブの上流側に配置される排気側オリフィスと、
前記ガス供給流路における前記二次側ガス排気流路との接続部と前記二次側バルブとの間に配置されるチャンバ側オリフィスと、を更に有し、
前記制御側オリフィスは最小加工限界の孔径を有し、
前記排気側オリフィスと前記チャンバ側オリフィスの孔径は互いに異なる、請求項1に記載のガス供給システム。 - 前記排気側オリフィスと前記チャンバ側オリフィスの孔径の大きさの比率を、前記制御側オリフィスから出力されるガスの流量に対する、前記処理チャンバに供給する目標流量の比率に基づいて決定する、請求項2に記載のガス供給システム。
- 複数の前記ガス供給流路は、前記二次側バルブの下流側において合流した後に前記処理チャンバに接続される、請求項1~3のいずれか一項に記載のガス供給システム。
- 前記ガス供給流路は、前記処理チャンバの内部における複数の異なる位置に対して独立してガスを供給する複数の分岐供給管を有し、
複数の前記分岐供給管のそれぞれには、独立して前記流量制御器、前記二次側バルブ、前記二次側ガス排気流路及び前記二次側排気バルブが接続される、請求項1~4のいずれか一項に記載のガス供給システム。 - 前記ガス供給流路は、前記一次側ガス排気流路との接続部と前記流量制御器との間において複数の前記分岐供給管に分岐する、請求項5に記載のガス供給システム。
- 複数の前記分岐供給管は、前記処理チャンバの内部に導入された基板の、少なくともエッジ領域及びセンタ領域に対して独立して前記ガスを供給可能に構成される、請求項5又は6に記載のガス供給システム。
- 基板を処理するプラズマ処理装置であって、
処理チャンバと、
前記処理チャンバの内部に配設される基板支持体と、
前記処理チャンバの内部にガスを供給する、請求項1~7のいずれか一項に記載のガス供給システムと、
前記処理チャンバ内のガスからプラズマを生成するように構成されるプラズマ生成部と、を備える、プラズマ処理装置。 - 処理チャンバ内へのガスの供給を制御するガス制御システムであって、
前記処理チャンバに対してガスを供給可能に構成されるガス供給流路と、
前記ガス供給流路に配置されるオリフィスと、
前記ガス供給流路における前記オリフィスの上流側に配置される一次側バルブと、
前記ガス供給流路における前記オリフィスと前記一次側バルブとの間で分岐して一次側排気機構に接続される一次側ガス排気流路と、
前記一次側ガス排気流路に配置される一次側排気バルブと、
前記ガス供給流路における前記オリフィスの下流側に配置される二次側バルブと、
前記ガス供給流路における前記オリフィスと前記二次側バルブとの間で分岐して二次側排気機構に接続される二次側ガス排気流路と、
前記二次側ガス排気流路に配置される二次側排気バルブと、
前記一次側バルブ、前記一次側排気バルブ、前記二次側バルブ及び前記二次側排気バルブの開度を独立して制御する制御部と、を有し、
前記制御部は、
前記一次側バルブ及び前記二次側バルブを開放し、かつ前記一次側排気バルブ及び前記二次側排気バルブを閉塞することで前記処理チャンバ内へガスを供給する工程と、
前記一次側バルブ及び前記二次側バルブを閉塞し、かつ前記一次側排気バルブ及び前記二次側排気バルブを開放することで前記ガス供給流路の内部を排気する工程と、を交互に繰り返し実行する制御と、
前記ガス供給流路の内部の排気に際して、当該ガス供給流路の内部に前記ガスが少なくとも残留するように、前記一次側排気機構及び前記二次側排気機構を動作させる制御と、を実行し、
排気後の前記ガス供給流路の内部圧力は100Torr以下である、ガス制御システム。 - 前記処理チャンバに対して独立してガスを供給可能に構成される複数のガス供給流路を含み、
前記オリフィス、前記一次側バルブ、前記一次側排気バルブ、前記二次側バルブ及び前記二次側排気バルブは、複数の前記ガス供給流路のそれぞれに配置される、請求項9に記載のガス制御システム。 - 前記処理チャンバの内部に供給する前記ガスの流量を制御する流量制御器を更に備え、
前記オリフィスは前記流量制御器の内部に配置され、
前記一次側バルブ、前記一次側排気バルブ、前記二次側バルブ及び前記二次側排気バルブは前記流量制御器の外部に配置される、請求項9又は10に記載のガス制御システム。 - 前記流量制御器は、前記ガス供給流路における前記オリフィスの上流側に配置される開度調整バルブを更に備える、請求項11に記載のガス制御システム。
- 前記オリフィス、前記一次側バルブ、前記一次側排気バルブ、前記二次側バルブ及び前記二次側排気バルブを一体に接続する取付部材を更に有する、請求項9~12のいずれか一項に記載のガス制御システム。
- 前記処理チャンバ内へ供給される前記ガスの流量は0.1sccm~10sccmである、請求項9~13のいずれか一項に記載のガス制御システム。
- 前記制御部は、
前記処理チャンバの内部に導入された基板に堆積物を形成するデポジションプロセスと、
前記基板をエッチングするエッチングプロセスと、を交互に繰り返し実行する制御を実行し、
前記デポジションプロセス及び前記エッチングプロセスは、それぞれ前記処理チャンバ内へガスを供給する工程と、前記ガス供給流路の内部を排気する工程と、を有し、
前記デポジションプロセス及び前記エッチングプロセスを含む1サイクルの処理時間は1秒~10秒である、請求項9~14のいずれか一項に記載のガス制御システム。 - ガス制御システムを用いたガス制御方法であって、
前記ガス制御システムは、
処理チャンバに対して独立してガスを供給可能に構成される複数のガス供給流路と、
複数の前記ガス供給流路のそれぞれに配置されるオリフィスと、
前記ガス供給流路における前記オリフィスの上流側に配置される一次側バルブと、
前記ガス供給流路における前記オリフィスと前記一次側バルブとの間で分岐して一次側排気機構に接続される一次側ガス排気流路と、
前記一次側ガス排気流路に配置される一次側排気バルブと、
前記ガス供給流路における前記オリフィスの下流側に配置される二次側バルブと、
前記ガス供給流路における前記オリフィスと前記二次側バルブとの間で分岐して二次側排気機構に接続される二次側ガス排気流路と、
前記二次側ガス排気流路に配置される二次側排気バルブと、を有し、
(A)複数の前記ガス供給流路から少なくとも1つが選択される、第1のガス供給流路群の前記一次側バルブ及び前記二次側バルブを開放し、かつ当該第1のガス供給流路群の前記一次側排気バルブ、前記二次側排気バルブ、及び他のガス供給流路の前記一次側バルブ、前記二次側バルブ、前記一次側排気バルブ及び前記二次側排気バルブを閉塞する工程と、
(B)前記第1のガス供給流路群における前記一次側バルブ及び前記二次側バルブを閉塞した後、当該第1のガス供給流路群の前記一次側排気バルブ、前記二次側排気バルブを開放する工程と、
(C)前記第1のガス供給流路群における前記一次側排気バルブ、前記二次側排気バルブを閉塞した後、前記他のガス龍供給流路から少なくとも1つが選択される、第2のガス供給流路群の前記一次側バルブ及び前記二次側バルブを開放する工程と、
(D)前記第2のガス供給流路群における前記一次側バルブ及び前記二次側バルブを閉塞した後、当該第2のガス供給流路群の前記一次側排気バルブ、前記二次側排気バルブを開放する工程と、を含む、ガス制御方法。 - 前記(A)工程及び前記(B)工程を含む第1のプロセスと、前記(C)工程及び前記(D)工程を含む第2のプロセスと、を交互に繰り返し実行する、請求項16に記載のガス制御方法。
- 処理チャンバ内へのガスの供給を制御するガス制御システムであって、
前記処理チャンバに対してガスを供給可能に構成されるガス供給流路と、
前記ガス供給流路に配置されるオリフィスと、
前記ガス供給流路における前記オリフィスの上流側に配置される流量制御バルブと、
前記ガス供給流路における前記流量制御バルブの上流側に配置される一次側バルブと、
前記ガス供給流路における前記オリフィスの下流側に配置される二次側バルブと、
前記ガス供給流路における前記オリフィスと前記二次側バルブとの間で分岐して二次側排気機構に接続される二次側ガス排気流路と、
前記二次側ガス排気流路に配置される二次側排気バルブと、
前記流量制御バルブ、前記一次側バルブ、前記二次側バルブ及び前記二次側排気バルブの開度を独立して制御する制御部と、を有し、
前記制御部は、
前記流量制御バルブ、前記一次側バルブ及び前記二次側バルブを開放し、かつ前記二次側排気バルブを閉塞することで前記処理チャンバ内へガスを供給する工程と、
前記流量制御バルブ、前記一次側バルブ及び前記二次側バルブを閉塞し、かつ前記二次側排気バルブを開放することで前記ガス供給流路の内部を排気する工程と、を交互に繰り返し実行する制御と、
前記ガスを供給する工程に際し、前記二次側バルブに先立って前記流量制御バルブ及び前記一次側バルブを開放し、前記オリフィスの下流側にガスを充填した後、前記二次側バルブを開放する制御と、を実行する、ガス制御システム。 - 前記制御部は、前記ガスを供給する工程に際し、前記オリフィスの下流側の圧力が予め定められた基準圧力まで昇圧された後、前記二次側バルブを開放する、請求項18に記載のガス制御システム。
- 前記基準圧力は、前記二次側バルブの下流側の圧力の80%以上120%以下である、請求項19に記載のガス制御システム。
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