TW202312273A - Gas supply system, gas control system, plasma processing device, and gas control method - Google Patents

Gas supply system, gas control system, plasma processing device, and gas control method Download PDF

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TW202312273A
TW202312273A TW111128056A TW111128056A TW202312273A TW 202312273 A TW202312273 A TW 202312273A TW 111128056 A TW111128056 A TW 111128056A TW 111128056 A TW111128056 A TW 111128056A TW 202312273 A TW202312273 A TW 202312273A
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gas
valve
exhaust
secondary side
flow path
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澤地淳
石原田幸太
藥師寺秀明
佐藤好保
森北信也
吉村正太
鶴田俊寛
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00—Control of flow
    • G05D7/06—Control of flow characterised by the use of electric means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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Abstract

This gas supply system for supplying gas to the inside of a processing chamber comprises: a plurality of gas supply flow paths configured to be able to supply gas independently to the processing chamber; a flow rate controller disposed on each of the gas supply flow paths; a primary-side valve disposed on the upstream side of the flow rate controller in the gas supply flow paths; a primary-side gas exhaust flow path that branches off between the primary-side valve and the flow rate controller in the gas supply flow paths and is connected to a primary-side exhaust mechanism; a primary-side exhaust valve disposed in the primary gas exhaust flow path; a secondary-side valve disposed on the downstream side of the flow rate controller in the gas supply flow paths; a secondary-side gas exhaust flow path that branches off between the secondary-side valve and the flow rate controller in the gas supply flow paths and is connected to a secondary-side exhaust mechanism; and a secondary-side exhaust valve disposed in the secondary-side gas exhaust flow path. The flow rate controller has a control valve connected to the primary-side valve and the secondary-side valve, and a control-side orifice disposed between the control valve and the secondary-side valve.

Description

氣體供給系統、氣體控制系統、電漿處理裝置及氣體控制方法Gas supply system, gas control system, plasma treatment device and gas control method

本發明係關於一種氣體供給系統、氣體控制系統、電漿處理裝置及氣體控制方法。The invention relates to a gas supply system, a gas control system, a plasma treatment device and a gas control method.

於專利文獻1揭露一種氣體供給控制方法，其使用：壓力控制式流量計，設置於氣體供給管線；第1閥，設置於該氣體供給管線之較該壓力控制式流量計更為上游側；以及第2閥，設置於該氣體供給管線之較該壓力控制式流量計更為下游側。此外，專利文獻1所記載之壓力控制式流量計，作為一例，具備和第1閥與第2閥連接的控制閥、及設置於控制閥與第2閥之間的孔口。 [習知技術文獻] [專利文獻] A gas supply control method is disclosed in Patent Document 1, which uses: a pressure-controlled flowmeter installed on a gas supply pipeline; a first valve installed on the gas supply pipeline on the upstream side of the pressure-controlled flowmeter; and The second valve is provided on the downstream side of the gas supply line from the pressure control type flowmeter. In addition, the pressure control type flowmeter described in Patent Document 1 includes, as an example, a control valve connected to the first valve and the second valve, and an orifice provided between the control valve and the second valve. [Prior art literature] [Patent Document]

專利文獻1：日本特開2016-201530號公報Patent Document 1: Japanese Patent Laid-Open No. 2016-201530

[本發明所欲解決的問題][Problem to be solved by the present invention]

本發明所揭露之技術，從控制往處理腔室內供給的氣體之流量的流量控制器之內部，將氣體適當地排氣。 [解決問題之技術手段] The technique disclosed in the present invention appropriately exhausts the gas from the inside of the flow controller that controls the flow rate of the gas supplied into the processing chamber. [Technical means to solve the problem]

本發明揭露之一態樣為往處理腔室內供給氣體之氣體供給系統，其包含：複數氣體供給流路，可對該處理腔室獨立地供給氣體；流量控制器，配置於複數該氣體供給流路中的各氣體供給流路；一次側閥，配置於該氣體供給流路中的該流量控制器之上游側；一次側氣體排氣流路，在該氣體供給流路中的該流量控制器與該一次側閥之間分支，連接至一次側排氣機構；一次側排氣閥，配置於該一次側氣體排氣流路；二次側閥，配置於該氣體供給流路中的該流量控制器之下游側；二次側氣體排氣流路，在該氣體供給流路中的該流量控制器與該二次側閥之間分支，連接至二次側排氣機構；以及二次側排氣閥，配置於該二次側氣體排氣流路；而該流量控制器，包括：控制閥，和該一次側閥與該二次側閥相連接；以及控制側孔口，配置於該控制閥與該二次側閥之間。 [本發明之效果] One aspect disclosed by the present invention is a gas supply system for supplying gas into a processing chamber, which includes: a plurality of gas supply flow paths, which can independently supply gas to the processing chamber; flow controllers, arranged in the plurality of gas supply flows Each gas supply flow path in the road; the primary side valve is arranged on the upstream side of the flow controller in the gas supply flow path; the primary side gas exhaust flow path, the flow controller in the gas supply flow path It is branched from the primary side valve and connected to the primary side exhaust mechanism; the primary side exhaust valve is arranged in the primary side gas exhaust flow path; the secondary side valve is arranged in the flow rate of the gas supply flow path a downstream side of the controller; a secondary side gas exhaust flow path branched between the flow controller and the secondary side valve in the gas supply flow path, connected to a secondary side exhaust mechanism; and a secondary side The exhaust valve is configured on the secondary side gas exhaust flow path; and the flow controller includes: a control valve connected to the primary side valve and the secondary side valve; and a control side orifice is configured on the between the control valve and the secondary side valve. [Effects of the present invention]

依本發明，則可從控制往處理腔室內供給的氣體之流量的流量控制器之內部，將氣體適當地排氣。According to the present invention, the gas can be properly exhausted from the inside of the flow controller that controls the flow rate of the gas supplied into the processing chamber.

於半導體元件之製程中，對於配置在腔室的內部空間之半導體基板（下稱「晶圓」），在期望的氣體環境下施行蝕刻處理、成膜處理、清洗處理等各種氣體處理。於此等氣體處理中，為了對成為處理對象之晶圓獲得期望的氣體處理結果，其要點在於精密地控制往腔室的內部空間供給之氣體的流量。In the manufacturing process of semiconductor devices, various gas processes such as etching, film formation, and cleaning are performed on the semiconductor substrate (hereinafter referred to as "wafer") arranged in the inner space of the chamber in a desired gas environment. In such gas processing, in order to obtain a desired gas processing result for a wafer to be processed, it is important to precisely control the flow rate of the gas supplied to the inner space of the chamber.

於專利文獻1揭露一種氣體供給控制方法，其利用控制往腔室之內部空間供給的氣體之流量的壓力控制式流量計。依專利文獻1記載之氣體供給控制方法，作為一例，藉由控制在壓力控制式流量計之上游側及下游側分別設置的第1閥與第2閥之開閉，而使對於腔室之內部空間的氣體之供給與停止重複，交互地實行對於晶圓之蝕刻程序與沉積程序。Patent Document 1 discloses a gas supply control method using a pressure control type flowmeter that controls the flow rate of gas supplied to the inner space of a chamber. According to the gas supply control method described in Patent Document 1, as an example, by controlling the opening and closing of the first valve and the second valve respectively provided on the upstream side and the downstream side of the pressure control type flowmeter, the internal space of the chamber is controlled. The supply and stop of the gas is repeated, and the etching process and the deposition process for the wafer are carried out alternately.

而在上述蝕刻程序與沉積程序之間，亦即在對於腔室之內部空間的氣體之供給停止之間，為了在下一個程序中往腔室之內部空間適當地供給氣體，而進行氣體的供給流路（壓力控制式流量計）內之抽真空。氣體的供給流路內之抽真空，例如係使用壓力控制式流量計所具備的連接在孔口與第1閥之間的抽真空管線（參考專利文獻1：Type1）、或連接在腔室之下游側的排氣管線（Type2）而施行。Between the above-mentioned etching process and the deposition process, that is, between the supply of gas to the internal space of the chamber is stopped, in order to properly supply the gas to the internal space of the chamber in the next process, the gas supply flow is performed. Vacuuming in the road (pressure-controlled flowmeter). The vacuum in the gas supply flow path is, for example, using a vacuum line connected between the orifice and the first valve (refer to Patent Document 1: Type 1) of the pressure-controlled flowmeter, or connected between the chamber. Execute for the exhaust line (Type2) on the downstream side.

然而，如同上述地使壓力控制式流量計具有孔口之情況，有藉由習知的抽真空方法（Type1、Type2）無法將供給流路內適當地抽真空，而在對於晶圓之處理程序造成影響的疑慮。具體而言，例如如同前述的Type1般地從孔口之上游側進行排氣的情況，有氣體以該孔口為界而殘留在下游側的供給流路內，如圖1所示地於下一個程序開始時發生尖波（spike）S之疑慮。此外，例如如同前述的Type2般地從孔口之下游側進行排氣的情況，有氣體以孔口為界而殘留在上游側，如圖2所示地使氣體供給停止時的下降回應性惡化之疑慮。However, as in the above-mentioned case where the pressure control flowmeter has an orifice, the conventional vacuuming method (Type 1, Type 2) cannot properly vacuum the inside of the supply flow path, and in the process of wafer processing Doubts about the impact. Specifically, for example, when the exhaust is performed from the upstream side of the orifice as in the above-mentioned Type 1, gas may remain in the supply flow path on the downstream side with the orifice as a boundary, as shown in FIG. 1 . Suspicion of a spike S at the start of a program. In addition, for example, when the exhaust is performed from the downstream side of the orifice as in the above-mentioned Type 2, the gas may remain on the upstream side with the orifice as the boundary, which deteriorates the drop response when the gas supply is stopped as shown in FIG. 2 doubts.

本發明所揭露之技術係鑒於上述情況而提出，從控制往處理腔室內供給的氣體之流量的流量控制器之內部，將氣體適當地排氣。以下，參考圖式，並針對包含本實施形態之氣體供給系統（氣體控制系統）及電漿處理裝置的晶圓處理系統予以說明。另，於本說明書及圖式中，在實質上具有同一功能構成的要素中給予同一符號，藉以省略重複說明。The technology disclosed in the present invention is proposed in view of the above-mentioned circumstances, and the gas is properly exhausted from the inside of the flow controller that controls the flow rate of the gas supplied into the processing chamber. Hereinafter, a wafer processing system including a gas supply system (gas control system) and a plasma processing apparatus according to the present embodiment will be described with reference to the drawings. In addition, in this specification and drawings, the same code|symbol is given to the element which has substantially the same function structure, and repeated description is omitted.

＜電漿處理系統＞ 一實施形態中，電漿處理系統，如圖3所示地包含電漿處理裝置1及控制部2。電漿處理系統為基板處理系統之一例，電漿處理裝置1為基板處理裝置之一例。電漿處理裝置1，包含電漿處理腔室10、基板支持部11及電漿產生部12。電漿處理腔室10，具有電漿處理空間。此外，電漿處理腔室10，具備：至少一個氣體供給口，用於將至少一種氣體往電漿處理空間供給；以及至少一個氣體排出口，用於從電漿處理空間將氣體排出。氣體供給口，連接至後述氣體供給部20；氣體排出口，連接至後述排氣系統40。基板支持部11配置於電漿處理空間內，具有用於支持基板的基板支持面。 ＜Plasma treatment system＞ In one embodiment, a plasma processing system includes a plasma processing apparatus 1 and a control unit 2 as shown in FIG. 3 . The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10 , a substrate supporting part 11 and a plasma generating part 12 . The plasma processing chamber 10 has a plasma processing space. In addition, the plasma processing chamber 10 has: at least one gas supply port for supplying at least one gas to the plasma processing space; and at least one gas discharge port for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 described later, and the gas discharge port is connected to an exhaust system 40 described later. The substrate support unit 11 is arranged in the plasma processing space and has a substrate support surface for supporting the substrate.

電漿產生部12，由供給至電漿處理空間內的至少一種氣體產生電漿。於電漿處理空間中形成之電漿，可為電容耦合電漿（CCP；Capacitively Coupled Plasma）、電感耦合電漿（ICP；Inductively Coupled Plasma）、ECR電漿（Electron-Cyclotron-resonance plasma, 電子迴旋共振電漿）、螺旋波激發電漿（HWP：Helicon Wave Plasma）、或表面波電漿（SWP：Surface Wave Plasma）等。此外，亦可使用包含AC（Alternating Current, 交流電）電漿產生部及DC（Direct Current, 直流電）電漿產生部的各種類型之電漿產生部。一實施形態中，在AC電漿產生部使用的交流電訊號（交流電力），具有100kHz～10GHz之範圍內的頻率。因此，交流電訊號，包含射頻（Radio Frequency, RF）訊號及微波訊號。一實施形態中，射頻訊號，具有100kHz～150MHz之範圍內的頻率。The plasma generator 12 generates plasma from at least one gas supplied into the plasma processing space. The plasma formed in the plasma processing space can be capacitively coupled plasma (CCP; Capacitively Coupled Plasma), inductively coupled plasma (ICP; Inductively Coupled Plasma), ECR plasma (Electron-Cyclotron-resonance plasma, electron cyclotron Resonance Plasma), Helicon Wave Plasma (HWP: Helicon Wave Plasma), or Surface Wave Plasma (SWP: Surface Wave Plasma), etc. In addition, various types of plasma generating units including an AC (Alternating Current) plasma generating unit and a DC (Direct Current) plasma generating unit may also be used. In one embodiment, the alternating current signal (alternating current power) used in the AC plasma generating unit has a frequency within a range of 100 kHz to 10 GHz. Therefore, alternating current signals include radio frequency (Radio Frequency, RF) signals and microwave signals. In one embodiment, the radio frequency signal has a frequency in the range of 100kHz˜150MHz.

控制部2，處裡使電漿處理裝置1實行本發明中所述之各種步驟的電腦可實行之命令。控制部2，可構成為控制電漿處理裝置1的各要素俾實行此處所述之各種步驟。一實施形態中，亦可使控制部2之一部分或全部包含於電漿處理裝置1。控制部2，例如亦可包含電腦2a。電腦2a，例如亦可包含處理部（CPU：Central Processing Unit, 中央處理器）2a1、記憶部2a2、及通訊介面2a3。處理部2a1，可構成為從記憶部2a2讀取程式，實行所讀取的程式，藉以施行各種控制動作。此等程式，可預先預先儲存在記憶部2a2，亦可在必要時經由媒體而取得。將取得的程式儲存在記憶部2a2，藉由處理部2a1從記憶部2a2讀取而實行。媒體，可為電腦2a可讀取之各種記錄媒體，亦可為和通訊介面2a3連接之通訊線路。記憶部2a2，亦可包含RAM（Random Access Memory, 隨機存取記憶體）、ROM（Read Only Memory, 唯讀記憶體）、HDD（Hard Disk Drive, 硬碟）、SSD（Solid State Drive, 固態硬碟）、或其等之組合。通訊介面2a3，亦可經由LAN（Local Area Network, 區域網路）等通訊線路而在與電漿處理裝置1之間進行通訊。另，上述程式，記錄在電腦2a可讀取之記錄媒體，亦可由該記錄媒體安裝至控制部2。此外，上述記錄媒體，為暫態性或非暫態性皆可。The control unit 2 handles computer-executable commands for the plasma processing apparatus 1 to execute various steps described in the present invention. The control unit 2 can be configured to control each element of the plasma processing apparatus 1 so as to perform various steps described here. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1 . The control unit 2 may also include a computer 2a, for example. The computer 2a, for example, may also include a processing unit (CPU: Central Processing Unit, central processing unit) 2a1, a memory unit 2a2, and a communication interface 2a3. The processing unit 2a1 can be configured to read programs from the storage unit 2a2, execute the read programs, and execute various control operations. These programs may be stored in the memory unit 2a2 in advance, or may be acquired via a medium when necessary. The obtained program is stored in the storage unit 2a2, and is executed by being read from the storage unit 2a2 by the processing unit 2a1. The medium can be various recording media that can be read by the computer 2a, and can also be a communication line connected to the communication interface 2a3. The memory part 2a2 may also include RAM (Random Access Memory, random access memory), ROM (Read Only Memory, read-only memory), HDD (Hard Disk Drive, hard disk), SSD (Solid State Drive, solid state hard drive) disc), or a combination thereof. The communication interface 2a3 can also communicate with the plasma processing device 1 through communication lines such as LAN (Local Area Network, local area network). In addition, the above-mentioned program is recorded on a recording medium readable by the computer 2a, and can also be installed into the control unit 2 from the recording medium. In addition, the above-mentioned recording media may be transient or non-transitory.

＜電漿處理裝置＞ 接著，作為上述電漿處理裝置1的一例，針對電容耦合型之電漿處理裝置1的構成例予以說明。圖4係顯示電漿處理裝置1的構成之概略的縱剖面圖。 ＜Plasma Treatment Equipment＞ Next, as an example of the plasma processing apparatus 1 described above, a configuration example of a capacitively coupled plasma processing apparatus 1 will be described. FIG. 4 is a vertical cross-sectional view schematically showing the configuration of the plasma processing apparatus 1 .

電漿處理裝置1，包含電漿處理腔室10、氣體供給部20、電源30及排氣系統40。此外，電漿處理裝置1，包含基板支持部11及氣體導入部。基板支持部11，配置於電漿處理腔室10內。氣體導入部，將至少一種氣體往電漿處理腔室10內導入。氣體導入部，包含噴淋頭13。噴淋頭13，配置於基板支持部11之上方。一實施形態中，噴淋頭13，構成電漿處理腔室10的頂棚部（ceiling）之至少一部分。於電漿處理腔室10的內部，形成由噴淋頭13、電漿處理腔室10之側壁10a、及基板支持部11所界定出的電漿處理空間10s。電漿處理腔室10，具有用於將至少一種氣體往電漿處理空間10s供給之至少一個氣體供給口、及用於從電漿處理空間10s將氣體排出之至少一個氣體排出口。使電漿處理腔室10接地。噴淋頭13及基板支持部11，和電漿處理腔室10電性絕緣。The plasma processing apparatus 1 includes a plasma processing chamber 10 , a gas supply unit 20 , a power source 30 and an exhaust system 40 . In addition, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas introduction unit. The substrate supporting part 11 is arranged in the plasma processing chamber 10 . The gas introduction part introduces at least one gas into the plasma processing chamber 10 . The gas introduction part includes a shower head 13 . The shower head 13 is arranged above the substrate supporting part 11 . In one embodiment, the shower head 13 constitutes at least a part of the ceiling of the plasma processing chamber 10 . Inside the plasma processing chamber 10, a plasma processing space 10s defined by the shower head 13, the side wall 10a of the plasma processing chamber 10, and the substrate supporting portion 11 is formed. The plasma processing chamber 10 has at least one gas supply port for supplying at least one gas to the plasma processing space 10s, and at least one gas discharge port for discharging gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate supporting part 11 are electrically insulated from the plasma processing chamber 10 .

基板支持部11，包含本體部11a及環組件11b。本體部11a的頂面，具備用於支持基板W之中央區域、及用於支持環組件11b之環狀區域。晶圓為基板W的一例。環狀區域，俯視時包圍中央區域。基板W，配置於中央區域上；環組件11b，以包圍中央區域上之基板W的方式配置於環狀區域上。因此，中央區域，亦稱作用於支持基板W之基板支持面；環狀區域，亦稱作用於支持環組件11b之環支持面。The substrate support portion 11 includes a main body portion 11a and a ring assembly 11b. The top surface of the main body portion 11a has a central region for supporting the substrate W and an annular region for supporting the ring unit 11b. A wafer is an example of a substrate W. As shown in FIG. A ring-shaped area that surrounds the central area when viewed from above. The substrate W is disposed on the central area, and the ring unit 11b is disposed on the annular area so as to surround the substrate W on the central area. Therefore, the central area is also referred to as a substrate supporting surface for supporting the substrate W; the annular area is also referred to as a ring supporting surface for supporting the ring assembly 11b.

一實施形態中，本體部11a，包含基台及靜電吸盤。基台，包含導電性構件。基台之導電性構件，可作為下部電極而作用。靜電吸盤，配置於基台之上。靜電吸盤，包含陶瓷構件、及配置於陶瓷構件內之靜電電極。陶瓷構件，具有中央區域。一實施形態中，陶瓷構件，亦具有環狀區域。另，亦可使如環狀靜電吸盤或環狀絕緣構件等包圍靜電吸盤的其他構件，具有環狀區域。此一情況，環組件11b，可配置於環狀靜電吸盤或環狀絕緣構件之上，亦可配置於靜電吸盤與環狀絕緣構件兩者之上。此外，亦可將射頻電極或直流電極配置於陶瓷構件內，此一情況，使射頻電極或直流電極作為下部電極而作用。在將後述偏壓射頻訊號或直流訊號與射頻電極或直流電極連接的情況，亦將射頻電極或直流電極稱作偏壓電極。另，亦可使基台之導電性構件與射頻電極或直流電極兩者，作為下部電極而作用。In one embodiment, the main body 11a includes a base and an electrostatic chuck. An abutment comprising a conductive member. The conductive member of the base can function as the lower electrode. The electrostatic chuck is arranged on the abutment. An electrostatic chuck includes a ceramic component and an electrostatic electrode arranged in the ceramic component. A ceramic member having a central region. In one embodiment, the ceramic member also has an annular region. In addition, other members surrounding the electrostatic chuck, such as a ring-shaped electrostatic chuck or a ring-shaped insulating member, may also have a ring-shaped area. In this case, the ring assembly 11b may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck and the annular insulating member. In addition, a radio frequency electrode or a direct current electrode may be disposed in the ceramic member, and in this case, the radio frequency electrode or the direct current electrode functions as the lower electrode. In the case of connecting the RF electrode or the DC electrode with the bias RF signal or the DC signal described later, the RF electrode or the DC electrode is also referred to as the bias electrode. In addition, both the conductive member of the base and the radio frequency electrode or the direct current electrode may function as the lower electrode.

環組件11b，包含一或複數個環狀構件。一實施形態中，一或複數個環狀構件，包含一或複數個邊緣環與至少一個覆蓋環。邊緣環，以導電性材料或絕緣材料形成；覆蓋環，以絕緣材料形成。The ring assembly 11b includes one or more ring members. In one embodiment, the one or more ring members include one or more edge rings and at least one covering ring. The edge ring is formed of conductive material or insulating material; the covering ring is formed of insulating material.

此外，雖省略圖示，但基板支持部11亦可包含調溫模組，其構成為將環組件11b、靜電吸盤及基板W中之至少一者調節為目標溫度。調溫模組，亦可包含加熱器、熱傳媒體、流路、或其等之組合。使鹽水或氣體等熱傳流體於流路流通。一實施形態中，於基台內形成流路，於靜電吸盤的陶瓷構件內配置一或複數個加熱器。此外，基板支持部11亦可包含熱傳氣體供給部，其構成為往基板W的背面與中央區域之間供給熱傳氣體（背面氣體）。In addition, although not shown, the substrate supporting part 11 may also include a temperature adjustment module configured to adjust at least one of the ring assembly 11b, the electrostatic chuck, and the substrate W to a target temperature. The temperature adjustment module may also include heaters, heat transfer media, flow paths, or a combination thereof. Heat transfer fluid such as brine or gas is circulated in the flow path. In one embodiment, a flow path is formed in the base, and one or more heaters are arranged in the ceramic member of the electrostatic chuck. In addition, the substrate support unit 11 may include a heat transfer gas supply unit configured to supply the heat transfer gas (back surface gas) between the back surface of the substrate W and the central region.

噴淋頭13，將來自氣體供給部20之至少一種氣體往電漿處理空間10s導入。噴淋頭13，包含導電性構件。噴淋頭13之導電性構件，作為上部電極而作用。亦即，噴淋頭13，包含上部電極。The shower head 13 introduces at least one gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 includes a conductive member. The conductive member of the shower head 13 functions as an upper electrode. That is, shower head 13 includes an upper electrode.

噴淋頭13，具有：至少一個氣體供給口，在本實施形態中為3個氣體供給口14c、14m、14e；至少一個氣體擴散室，在本實施形態中為3個氣體擴散室15c、15m、15e；以及複數個氣體導入口16。從氣體供給部20供給至氣體供給口14c的氣體，通過氣體擴散室15c，由複數個氣體導入口16向基板支持部11所支持之基板W的中心部（center）區域供給。從氣體供給部20供給至氣體供給口14e的氣體，通過氣體擴散室15e，由複數個氣體導入口16向基板支持部11所支持之基板W的邊緣部（edge）區域供給。從氣體供給部20供給至氣體供給口14m的氣體，通過氣體擴散室15m，由複數個氣體導入口16向基板支持部11所支持之基板W的中心部區域與邊緣部區域之間的中間部（middle）區域供給。The shower head 13 has: at least one gas supply port, in this embodiment, three gas supply ports 14c, 14m, 14e; at least one gas diffusion chamber, in this embodiment, three gas diffusion chambers 15c, 15m , 15e; and a plurality of gas inlets 16. The gas supplied from the gas supply unit 20 to the gas supply port 14 c passes through the gas diffusion chamber 15 c and is supplied from the plurality of gas introduction ports 16 to the center region of the substrate W supported by the substrate support unit 11 . The gas supplied from the gas supply unit 20 to the gas supply port 14e passes through the gas diffusion chamber 15e and is supplied from the plurality of gas introduction ports 16 to the edge region of the substrate W supported by the substrate support unit 11 . The gas supplied from the gas supply unit 20 to the gas supply port 14m passes through the gas diffusion chamber 15m, and is directed from the plurality of gas introduction ports 16 to the intermediate portion between the center region and the edge region of the substrate W supported by the substrate support unit 11. (middle) regional supply.

另，氣體導入部，亦可在包含噴淋頭13以外，更包含一或複數個側面氣體注入部（SGI：Side Gas Injector），此等側面氣體注入部安裝於形成在側壁10a的一或複數個開口部。In addition, the gas introduction part can also include one or more side gas injection parts (SGI: Side Gas Injector) in addition to the shower head 13. an opening.

圖5係顯示作為氣體供給系統的氣體供給部20之配管系統的系統圖。另，下述說明中，有分別將氣體之流通方向中的後述氣體源100側稱作一次側（上游側），將流通方向中的噴淋頭13側稱作二次側（下游側）之情況。另，於圖4中，為了避免圖示變得繁複，僅圖示圖5所示的後述複數流量控制單元110a～110e中之一個流量控制單元110，將編號的a～e省略。亦即，圖4所記載的流量控制單元110，係圖示流量控制單元110a～110e中之任一者。 此外，同樣地，於圖4中，和各流量控制單元110a～110e對應配置之各種構件的構成相同，故將各種構件之編號的a～e省略。亦即，圖4所記載的各種構件，和流量控制單元110a～110e之至少任一者對應而配置。 此外，同樣地，下述說明中，有將流量控制單元110a～110e、及對應配置的各種構件之編號的a～e省略而進行說明之情況。 FIG. 5 is a system diagram showing the piping system of the gas supply unit 20 as the gas supply system. In addition, in the following description, the side of the gas source 100 described later in the flow direction of gas is referred to as the primary side (upstream side), and the side of the shower head 13 in the flow direction is referred to as the secondary side (downstream side). Condition. In addition, in FIG. 4 , in order to avoid complicated illustration, only one flow control unit 110 among the plurality of flow control units 110 a to 110 e described later shown in FIG. 5 is shown, and the numbers a to e are omitted. That is, the flow control unit 110 described in FIG. 4 is any one of the flow control units 110 a to 110 e shown. In addition, similarly, in FIG. 4 , the configurations of various components corresponding to the respective flow rate control units 110 a to 110 e are the same, so the numbers a to e of various components are omitted. That is, various members described in FIG. 4 are arranged corresponding to at least any one of the flow rate control units 110a to 110e. In addition, similarly, in the following description, the flow rate control units 110a to 110e and the numbers a to e of various components arranged correspondingly may be omitted and described.

如圖5所示，氣體供給部20，包含：至少一個氣體源，在本實施形態中為5個氣體源100a～100e；以及至少一個流量控制單元，在本實施形態中和各氣體源100a～100e對應而為5個流量控制單元110a～110e。一實施形態中，氣體供給部20，將從5個氣體源100分別輸出的不同種類之氣體，經由分別對應的流量控制單元110而往噴淋頭13供給。As shown in Figure 5, the gas supply part 20 includes: at least one gas source, in this embodiment, five gas sources 100a-100e; and at least one flow control unit, in this embodiment, each gas source 100a-100e 100e corresponds to five flow rate control units 110a-110e. In one embodiment, the gas supply unit 20 supplies the different types of gases output from the five gas sources 100 to the shower head 13 through the respective corresponding flow control units 110 .

如圖4及圖5所示，各流量控制單元110，經由分別對應的作為氣體供給流路之一次側供給管120，而與分別對應的氣體源100連接。此外，於一次側供給管120，配置分別對應的一次側閥121，藉由此等一次側閥121之開閉，而可任意切換氣體的從氣體源100往各流量控制單元110之供給。另，作為一次側閥121，例如可使用氣動閥或電磁閥等任意種類的閥，但從改善氣體供給之回應性的觀點來看，例如宜使用電磁閥。As shown in FIGS. 4 and 5 , each flow control unit 110 is connected to a corresponding gas source 100 through a corresponding primary supply pipe 120 serving as a gas supply flow path. In addition, corresponding primary side valves 121 are disposed on the primary side supply pipes 120 , and the supply of gas from the gas source 100 to each flow control unit 110 can be switched arbitrarily by opening and closing of these primary side valves 121 . In addition, as the primary side valve 121, for example, any type of valve such as a pneumatic valve or a solenoid valve can be used, but from the viewpoint of improving the responsiveness of gas supply, for example, a solenoid valve is preferably used.

此外，在一次側閥121與流量控制單元110之間，亦即在一次側閥121之下游側且係流量控制單元110之上游側的一次側供給管120，經由一次側排氣管130而與排氣單元131連接。作為一次側排氣機構的排氣單元131，於一例中，對各流量控制單元110共通設置。此外，於作為一次側氣體排氣流路的一次側排氣管130，配置和各流量控制單元110對應的一次側排氣閥132，藉由此等一次側排氣閥132之開閉，而可將流量控制單元110及一次側供給管120的內部抽真空。排氣單元131，亦可包含真空泵。真空泵，亦可包含渦輪分子泵、乾式泵或其等之組合。另，排氣單元131，亦可與和電漿處理腔室10連接的後述排氣系統40、後述排氣單元151共通使用。此外，作為一次側排氣閥132，例如可使用氣動閥或電磁閥等任意種類的閥，但從改善氣體排氣之回應性的觀點來看，例如宜使用電磁閥。In addition, between the primary side valve 121 and the flow rate control unit 110 , that is, the primary side supply pipe 120 on the downstream side of the primary side valve 121 and the upstream side of the flow rate control unit 110 is connected to the primary side exhaust pipe 130 via the primary side exhaust pipe 130 . The exhaust unit 131 is connected. In one example, the exhaust unit 131 as the primary side exhaust mechanism is provided in common to each of the flow rate control units 110 . In addition, primary side exhaust valves 132 corresponding to each flow control unit 110 are arranged in the primary side exhaust pipe 130 as the primary side gas exhaust flow path. By opening and closing these primary side exhaust valves 132, it is possible to The interior of the flow rate control unit 110 and the primary-side supply pipe 120 is evacuated. The exhaust unit 131 may also include a vacuum pump. Vacuum pumps may also include turbomolecular pumps, dry pumps or combinations thereof. In addition, the exhaust unit 131 may be used in common with the exhaust system 40 described below and the exhaust unit 151 described later connected to the plasma processing chamber 10 . In addition, as the primary side exhaust valve 132, for example, any type of valve such as a pneumatic valve or a solenoid valve can be used, but from the viewpoint of improving the responsiveness of gas exhaust, for example, a solenoid valve is preferably used.

各流量控制單元110，包含3個壓力控制式之流量控制器111c、111m、111e（以下有將其等統稱作「流量控制器111」的情況），用於控制往噴淋頭13之3個氣體供給口14c、14m、14e分別供給的氣體之流量。3個流量控制器111，分別連接至分支出的一次側供給管120（分支供給管）之端部。另，於一例中，一次側供給管120，在該一次側供給管120之較和一次側排氣管130的連接部更為下游側中，分支為3條分支供給管。Each flow control unit 110 includes three pressure-controlled flow controllers 111c, 111m, and 111e (hereinafter, they are collectively referred to as "flow controllers 111"), which are used to control the three flow controllers to the shower head 13. The flow rates of the gases supplied from the gas supply ports 14c, 14m, and 14e, respectively. The three flow rate controllers 111 are respectively connected to ends of branched primary-side supply pipes 120 (branch supply pipes). In addition, in one example, the primary side supply pipe 120 is branched into three branch supply pipes on the downstream side of the connection portion of the primary side supply pipe 120 to the primary side exhaust pipe 130 .

利用圖4，針對流量控制器111之構成予以說明。由於各流量控制器111c、111m、111e之構成相同，於圖4中為了避免圖示變得繁複，而有對於具有同一功能構成的要素將編號省略之情況。The configuration of the flow rate controller 111 will be described using FIG. 4 . Since the configurations of the flow controllers 111c, 111m, and 111e are the same, in order to avoid complicating the illustration in FIG. 4 , elements having the same functional configuration may be numbered.

流量控制器111，包含內部供給管112、孔口113、2個壓力感測器114與115、控制閥116、及控制電路117。此外，作為氣體供給流路之內部供給管112，以孔口113為界，包含上游側之一次側內部供給管112a、及下游側之二次側內部供給管112b。The flow controller 111 includes an internal supply pipe 112 , an orifice 113 , two pressure sensors 114 and 115 , a control valve 116 , and a control circuit 117 . Furthermore, the internal supply pipe 112 as a gas supply flow path includes a primary internal supply pipe 112 a on the upstream side and a secondary internal supply pipe 112 b on the downstream side, with the orifice 113 as a boundary.

一次側內部供給管112a，將一次側連接至前述一次側供給管120，將二次側連接至孔口113。此外，二次側內部供給管112b，將一次側連接至孔口113，將二次側連接至後述二次側供給管140。換而言之，孔口113，設置在一次側內部供給管112a與二次側內部供給管112b之間。The primary side internal supply pipe 112 a connects the primary side to the aforementioned primary side supply pipe 120 and connects the secondary side to the orifice 113 . In addition, the secondary-side internal supply pipe 112b connects the primary side to the orifice 113 and connects the secondary side to the secondary-side supply pipe 140 described later. In other words, the orifice 113 is provided between the primary-side internal supply pipe 112a and the secondary-side internal supply pipe 112b.

2個壓力感測器114、115，分別測定一次側內部供給管112a及二次側內部供給管112b的內部壓力，亦即，分別測定孔口113之上游側及下游側的壓力。以下，有將以壓力感測器114測定之一次側內部供給管112a的內部壓力稱作「內部壓力P1」，將以壓力感測器115測定之二次側內部供給管112b的內部壓力稱作「內部壓力P2」之情況。The two pressure sensors 114 and 115 measure the internal pressures of the primary internal supply pipe 112 a and the secondary internal supply pipe 112 b , that is, the pressures on the upstream and downstream sides of the orifice 113 , respectively. Hereinafter, the internal pressure of the primary-side internal supply pipe 112a measured by the pressure sensor 114 is referred to as "internal pressure P1", and the internal pressure of the secondary-side internal supply pipe 112b measured by the pressure sensor 115 is referred to as The case of "internal pressure P2".

控制閥116，藉由以控制電路117控制開度，而控制在內部供給管112流通而往電漿處理腔室10（噴淋頭13）內供給的氣體之流量。更具體而言，藉由以控制電路117控制控制閥116之開度，調整一次側內部供給管112a的內部壓力P1，而控制在孔口113之下游側（二次側內部供給管112b）流通的氣體之流量，將其保持為依電漿處理腔室10的晶圓處理之目的而決定之期望的值。The opening of the control valve 116 is controlled by the control circuit 117 to control the flow rate of the gas flowing through the internal supply pipe 112 and supplied into the plasma processing chamber 10 (shower head 13 ). More specifically, by controlling the opening of the control valve 116 with the control circuit 117, the internal pressure P1 of the primary side internal supply pipe 112a is adjusted, and the flow on the downstream side of the orifice 113 (secondary side internal supply pipe 112b) is controlled. The flow rate of the gas is maintained at a desired value determined according to the purpose of wafer processing in the plasma processing chamber 10 .

進一步，控制閥116，亦可包含藉由控制電路117的控制而將至少一種氣體之流量予以調變或脈衝化的作為流量調變元件之功能。Further, the control valve 116 may also include a function as a flow modulating element that modifies or pulses the flow of at least one gas under the control of the control circuit 117 .

回到氣體供給部20的說明。 如圖4及圖5所示，各流量控制器111c、111m、111e，經由分別對應的作為氣體供給流路之二次側供給管140c、140m、140e，而與對應的噴淋頭13之氣體供給口14c、14m、14e的任一者連接。此外，於二次側供給管140配置分別對應的二次側閥141，藉由此等二次側閥141之開閉，而可任意切換氣體的從各流量控制器111往噴淋頭13之供給。另，作為二次側閥141，例如可使用氣動閥或電磁閥等任意種類的閥，但從改善氣體供給之回應性的觀點來看，例如宜使用電磁閥。本實施形態之電漿處理裝置1中，雖亦可將其他閥（例如一次側閥121、一次側排氣閥132、或後述二次側排氣閥152）電磁閥化，但藉由如此地將二次側閥141電磁閥化，而特別有利於氣體供給之回應性的改善。 Return to the description of the gas supply unit 20 . As shown in Figures 4 and 5, each flow controller 111c, 111m, 111e is connected to the gas flow of the corresponding shower head 13 through the corresponding secondary side supply pipes 140c, 140m, 140e as the gas supply flow path. Any one of the supply ports 14c, 14m, and 14e is connected. In addition, the corresponding secondary side valves 141 are arranged in the secondary side supply pipes 140, and the supply of gas from each flow controller 111 to the shower head 13 can be switched arbitrarily by opening and closing these secondary side valves 141. . In addition, as the secondary side valve 141, for example, any type of valve such as a pneumatic valve or a solenoid valve can be used, but from the viewpoint of improving the responsiveness of gas supply, for example, a solenoid valve is preferably used. In the plasma processing apparatus 1 of the present embodiment, other valves (such as the primary side valve 121, the primary side exhaust valve 132, or the secondary side exhaust valve 152 described later) can also be electromagnetic valves, but by doing so Turning the secondary side valve 141 into a solenoid valve is particularly advantageous for improving the responsiveness of the gas supply.

此外，各二次側供給管140，分別於對應的二次側閥141之下游側中合流，而後，連接至噴淋頭13。藉此，藉由二次側閥141之開閉，切換來自各流量控制器111的氣體之供給，藉以將不同種類的氣體分別任意地混合，可作為混合氣體往噴淋頭13供給。In addition, each of the secondary side supply pipes 140 merges in the downstream side of the corresponding secondary side valve 141 , and is then connected to the shower head 13 . In this way, the gas supply from each flow controller 111 is switched by opening and closing the secondary side valve 141 , so that different types of gas can be mixed arbitrarily, and can be supplied to the shower head 13 as a mixed gas.

此外，在流量控制器111與二次側閥141之間，亦即在二次側閥141之上游側且係流量控制器111之下游側的二次側供給管140，經由二次側排氣管150而與排氣單元151連接。作為二次側排氣機構的排氣單元151，於一例中，對各流量控制器111共通設置。此外，於作為二次側氣體排氣流路的二次側排氣管150，配置和各流量控制器111對應的二次側排氣閥152，藉由此等二次側排氣閥152之開閉，而可將流量控制器111（流量控制單元110）及二次側供給管140的內部抽真空。排氣單元151，亦可包含真空泵。真空泵，亦可包含渦輪分子泵、乾式泵或其等之組合。另，排氣單元151，亦可與和電漿處理腔室10連接的後述排氣系統40、排氣單元131共通使用。此外，作為二次側排氣閥152，例如可使用氣動閥或電磁閥等任意種類的閥，但從改善氣體排氣之回應性的觀點來看，例如宜使用電磁閥。In addition, between the flow controller 111 and the secondary side valve 141, that is, the secondary side supply pipe 140 on the upstream side of the secondary side valve 141 and on the downstream side of the flow rate controller 111, is exhausted via the secondary side. The pipe 150 is connected to the exhaust unit 151 . An exhaust unit 151 as a secondary side exhaust mechanism is provided in common with each of the flow controllers 111 in one example. In addition, secondary side exhaust valves 152 corresponding to the respective flow rate controllers 111 are arranged in the secondary side exhaust pipe 150 as the secondary side gas exhaust flow path, and the secondary side exhaust valves 152 are connected to each other. The inside of the flow controller 111 (flow control unit 110 ) and the secondary side supply pipe 140 can be evacuated by opening and closing. The exhaust unit 151 may also include a vacuum pump. Vacuum pumps may also include turbomolecular pumps, dry pumps or combinations thereof. In addition, the exhaust unit 151 can also be used in common with the exhaust system 40 and the exhaust unit 131 which will be described later and which are connected to the plasma processing chamber 10 . In addition, as the secondary side exhaust valve 152, for example, any type of valve such as a pneumatic valve or a solenoid valve can be used, but from the viewpoint of improving the responsiveness of gas exhaust, for example, a solenoid valve is preferably used.

此外，一實施形態中，二次側供給管140，於分別對應的二次側閥141之下游側中，可與另一氣體供給部160連接。換而言之，亦可於從氣體供給部20經由各流量控制單元110往噴淋頭13供給的氣體，進一步混合從另一氣體供給部160供給的另一氣體。In addition, in one embodiment, the secondary-side supply pipes 140 may be connected to another gas supply part 160 on the downstream side of the respective corresponding secondary-side valves 141 . In other words, another gas supplied from another gas supply unit 160 may be further mixed with the gas supplied from the gas supply unit 20 to the shower head 13 via each flow rate control unit 110 .

另一氣體供給部160，亦可包含至少一個氣體源161及至少一個流量控制器162。一實施形態中，氣體供給部160，將至少一種氣體，從分別對應的氣體源161經由分別對應的流量控制器162而往噴淋頭13供給。各流量控制器162，例如亦可包含質量流量控制器或壓力控制式之流量控制器。Another gas supply part 160 may also include at least one gas source 161 and at least one flow controller 162 . In one embodiment, the gas supply unit 160 supplies at least one gas to the shower head 13 from the corresponding gas sources 161 via the corresponding flow controllers 162 . Each flow controller 162 may also include, for example, a mass flow controller or a pressure-controlled flow controller.

一實施形態中，另一氣體供給部160，可構成為可對噴淋頭13供給較氣體供給部20更為大流量的氣體。換而言之，氣體供給部20，可構成為可對噴淋頭13供給小流量（例如0.1～10sccm，宜為0.5～2sccm）的氣體。In one embodiment, the other gas supply unit 160 may be configured to supply a larger flow rate of gas than the gas supply unit 20 to the shower head 13 . In other words, the gas supply unit 20 may be configured to supply gas at a small flow rate (for example, 0.1 to 10 sccm, preferably 0.5 to 2 sccm) to the shower head 13 .

另，一實施形態中，藉由前述控制部2，控制氣體供給部20的動作。具體而言，控制部2，例如構成為可獨立地控制氣體供給部20所具備的各種閥（一次側閥121、一次側排氣閥132、二次側閥141及二次側排氣閥152）之開度。藉此，氣體供給部20，獨立地實行從複數流量控制單元110各自往電漿處理腔室10的氣體供給之控制，並獨立地實行複數流量控制單元110各自中的供給管內部之排氣控制。In addition, in one embodiment, the operation of the gas supply unit 20 is controlled by the aforementioned control unit 2 . Specifically, the control unit 2 is, for example, configured to independently control various valves (the primary side valve 121, the primary side exhaust valve 132, the secondary side valve 141, and the secondary side exhaust valve 152) included in the gas supply unit 20. ) of the opening. Thereby, the gas supply unit 20 independently controls the gas supply from each of the plurality of flow control units 110 to the plasma processing chamber 10, and independently performs the exhaust control of the supply pipes in each of the plurality of flow control units 110. .

回到圖4之電漿處理裝置1的說明。 電源30，包含經由至少一個阻抗匹配電路而與電漿處理腔室10耦合的射頻電源31。射頻電源31，將來源射頻訊號及偏壓射頻訊號等至少一種射頻訊號（射頻電力），對基板支持部11之導電性構件（下部電極）及／或噴淋頭13之導電性構件（上部電極）供給。藉此，由供給至電漿處理空間10s之至少一種處理氣體形成電漿。因此，射頻電源31，可作為電漿產生部12之至少一部分而作用。此外，藉由將偏壓射頻訊號對下部電極供給，而可在基板W產生偏壓電位，將形成的電漿中之離子成分引入至基板W。 Return to the description of the plasma processing device 1 in FIG. 4 . The power source 30 includes a radio frequency power source 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 supplies at least one RF signal (RF power) such as a source RF signal and a bias RF signal, to the conductive member (lower electrode) of the substrate support part 11 and/or the conductive member (upper electrode) of the shower head 13 )supply. Thereby, plasma is formed by at least one processing gas supplied to the plasma processing space 10s. Therefore, the radio frequency power source 31 can function as at least a part of the plasma generating unit 12 . In addition, by supplying a bias radio frequency signal to the lower electrode, a bias potential can be generated on the substrate W, and ion components in the formed plasma can be introduced into the substrate W.

一實施形態中，射頻電源31，包含第1射頻訊號產生部31a及第2射頻訊號產生部31b。第1射頻訊號產生部31a，經由至少一個阻抗匹配電路而與下部電極及／或上部電極耦合，產生電漿產生用之來源射頻訊號（來源射頻電力）。一實施形態中，來源射頻訊號，具有10MHz～150MHz之範圍內的頻率。一實施形態中，第1射頻訊號產生部31a，亦可構成為產生具有不同頻率之複數種來源射頻訊號。將產生之一或複數種來源射頻訊號，對下部電極及／或上部電極供給。In one embodiment, the radio frequency power supply 31 includes a first radio frequency signal generator 31a and a second radio frequency signal generator 31b. The first radio frequency signal generator 31a is coupled to the lower electrode and/or the upper electrode via at least one impedance matching circuit, and generates a source radio frequency signal (source radio frequency power) for plasma generation. In one embodiment, the source radio frequency signal has a frequency in the range of 10MHz˜150MHz. In one embodiment, the first radio frequency signal generating unit 31a can also be configured to generate a plurality of source radio frequency signals with different frequencies. One or more sources of radio frequency signals will be generated and supplied to the lower electrode and/or the upper electrode.

第2射頻訊號產生部31b，經由至少一個阻抗匹配電路而與下部電極耦合，產生偏壓射頻訊號（偏壓射頻電力）。偏壓射頻訊號的頻率，可與來源射頻訊號的頻率相同，亦可不同。一實施形態中，偏壓射頻訊號，具有較來源射頻訊號的頻率更低之頻率。一實施形態中，偏壓射頻訊號，具有100kHz～60MHz之範圍內的頻率。一實施形態中，第2射頻訊號產生部31b，亦可構成為產生具有不同頻率之複數種偏壓射頻訊號。將產生之一或複數種偏壓射頻訊號，對下部電極供給。此外，於各種實施形態中，亦可將來源射頻訊號及偏壓射頻訊號中之至少一者脈衝化。The second RF signal generator 31b is coupled to the lower electrode via at least one impedance matching circuit to generate a bias RF signal (bias RF power). The frequency of the bias RF signal can be the same as that of the source RF signal, or it can be different. In one embodiment, the bias RF signal has a lower frequency than the source RF signal. In one embodiment, the bias radio frequency signal has a frequency in the range of 100kHz˜60MHz. In one embodiment, the second radio frequency signal generator 31b can also be configured to generate a plurality of bias radio frequency signals with different frequencies. One or more bias RF signals will be generated and supplied to the lower electrode. In addition, in various embodiments, at least one of the source RF signal and the bias RF signal may also be pulsed.

此外，電源30，亦可包含與電漿處理腔室10耦合的直流電源32。直流電源32，包含第1直流訊號產生部32a及第2直流訊號產生部32b。一實施形態中，第1直流訊號產生部32a，連接至下部電極，產生第1直流訊號。將產生之第1直流訊號，對下部電極施加。一實施形態中，亦可將第1直流訊號，對靜電吸盤內的吸附用電極等其他電極施加。一實施形態中，第2直流訊號產生部32b，連接至上部電極，產生第2直流訊號。將產生之第2直流訊號，對上部電極施加。In addition, the power source 30 may also include a DC power source 32 coupled with the plasma processing chamber 10 . The DC power supply 32 includes a first DC signal generator 32a and a second DC signal generator 32b. In one embodiment, the first DC signal generator 32a is connected to the lower electrode to generate the first DC signal. The generated first DC signal is applied to the lower electrode. In one embodiment, the first DC signal may also be applied to other electrodes such as the adsorption electrodes in the electrostatic chuck. In one embodiment, the second DC signal generator 32b is connected to the upper electrode to generate the second DC signal. The generated second DC signal is applied to the upper electrode.

於各種實施形態中，亦可將第1直流訊號及第2直流訊號中之至少一者脈衝化。此一情況，將依據直流電的電壓脈衝之序列，對下部電極及／或上部電極施加。電壓脈衝，亦可具有矩形、梯形、三角形或其等之組合的脈衝波形。一實施形態中，於第1直流訊號產生部32a與下部電極之間，連接用於由直流訊號產生電壓脈衝之序列的波形產生部。因此，第1直流訊號產生部32a與波形產生部，構成電壓脈衝產生部。使第2直流訊號產生部32b與波形產生部構成電壓脈衝產生部之情況，將電壓脈衝產生部連接至上部電極。電壓脈衝，可具有正極性，亦可具有負極性。此外，電壓脈衝之序列，可於一週期內包含一或複數重正極性電壓脈衝與一或複數重負極性電壓脈衝。另，可在設置射頻電源31之外進一步設置第1直流訊號產生部32a及第2直流訊號產生部32b，亦可取代第2射頻訊號產生部31b而設置第1直流訊號產生部32a。In various embodiments, at least one of the first DC signal and the second DC signal may be pulsed. In this case, a sequence of voltage pulses according to a direct current is applied to the lower electrode and/or the upper electrode. The voltage pulse may also have a pulse waveform of a rectangle, trapezoid, triangle or a combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from a DC signal is connected between the first DC signal generator 32a and the lower electrode. Therefore, the first DC signal generator 32a and the waveform generator constitute a voltage pulse generator. In the case where the second DC signal generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to the upper electrode. Voltage pulses can have either positive or negative polarity. In addition, the sequence of voltage pulses may include one or multiple repeated positive polarity voltage pulses and one or multiple repeated negative polarity voltage pulses within one cycle. In addition, the first DC signal generator 32a and the second DC signal generator 32b may be further provided in addition to the RF power supply 31, or the first DC signal generator 32a may be provided instead of the second RF signal generator 31b.

排氣系統40，例如可與設置於電漿處理腔室10之底部的氣體排出口10e連接。排氣系統40，亦可包含壓力調整閥及真空泵。藉由壓力調整閥，調整電漿處理空間10s之內部壓力。真空泵，亦可包含渦輪分子泵、乾式泵或其等之組合。The exhaust system 40 can be connected to the gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 may also include a pressure regulating valve and a vacuum pump. Adjust the internal pressure of the plasma processing space for 10s by means of the pressure regulating valve. Vacuum pumps may also include turbomolecular pumps, dry pumps or combinations thereof.

以上，雖針對各種例示性實施形態進行說明，但並未限定於上述例示性實施形態，亦可進行各種追加、省略、置換、及變更。此外，可將不同實施形態中之要素組合而形成另一實施形態。As mentioned above, although various exemplary embodiments were described, it is not limited to the above-mentioned exemplary embodiments, and various additions, omissions, substitutions, and changes are possible. In addition, elements in different embodiments may be combined to form another embodiment.

例如，上述實施形態中，氣體供給部20，對應於5個氣體源100a～100e而分別設置5個流量控制單元110a～110e。換而言之，氣體供給部20，具有對一個流量控制單元110供給一種氣體之單系統的構成。然則，氣體供給部20的構成並未限定於此一形態，亦可如圖6所示，具有對一個流量控制單元110供給複數種氣體（圖6的例子中為2種）之雙系統以上的構成。For example, in the above-described embodiment, the gas supply unit 20 is provided with five flow rate control units 110a to 110e corresponding to the five gas sources 100a to 100e, respectively. In other words, the gas supply unit 20 has a single-system configuration that supplies one type of gas to one flow rate control unit 110 . However, the configuration of the gas supply unit 20 is not limited to this form, and as shown in FIG. 6 , it may have two or more systems that supply multiple types of gases (two types in the example in FIG. 6 ) to one flow control unit 110. constitute.

此外，上述實施形態中，於氣體供給部20中，如圖4所示地對各種供給管（一次側供給管120、內部供給管112及二次側供給管140）獨立地連接各種構件（一次側閥121、一次側排氣閥132、孔口113、二次側排氣閥152及二次側閥141）。然而，氣體供給部20的構成並未限定於此一形態，從改善該氣體供給部20之維修性等的觀點來看，宜將各種構件對各種供給管連接成一體。具體而言，亦可於圖7之示意圖作為一例而顯示，藉由將和各種供給管連接的各種構件（一次側閥121、一次側排氣閥132、孔口113、二次側排氣閥152及二次側閥141）分別對作為安裝構件之安裝板170固定，而成為一體化的構成。In addition, in the above-mentioned embodiment, in the gas supply part 20, as shown in FIG. side valve 121, primary side exhaust valve 132, orifice 113, secondary side exhaust valve 152, and secondary side valve 141). However, the configuration of the gas supply unit 20 is not limited to this form, and from the viewpoint of improving the maintainability of the gas supply unit 20, it is preferable to integrally connect various members to various supply pipes. Specifically, it can also be shown as an example in the schematic diagram of FIG. 152 and the secondary side valve 141) are respectively fixed to the mounting plate 170 as the mounting member to form an integrated structure.

＜晶圓處理方法（第1實施形態）＞ 接著，針對使用如同上述地構成之晶圓處理系統所施行的第1實施形態之作為氣體供給方法（氣體控制方法）的晶圓處理方法予以說明。另，下述說明中，以對於電漿處理腔室10內之成為處理對象的基板W實行蝕刻處理（ALE：Atomic Layer Etching）之情況為例而進行說明，但對基板W實行之氣體處理的種類並未限定於下述實施例。例如於電漿處理腔室10中，可取代蝕刻處理，而如同上述地施行成膜處理、清洗處理等任意氣體處理。 <Wafer processing method (first embodiment)> Next, a wafer processing method as a gas supply method (gas control method) according to the first embodiment implemented using the wafer processing system configured as described above will be described. In addition, in the following description, the case where the etching process (ALE: Atomic Layer Etching) is performed on the substrate W to be processed in the plasma processing chamber 10 will be described as an example. The kind is not limited to the following Examples. For example, in the plasma processing chamber 10 , instead of the etching process, arbitrary gas processes such as film formation process and cleaning process may be performed as described above.

此外，本實施形態中，三種氣體，作為一例，以使用從氣體源100a供給的CF系氣體（例如C 4F 6、C 4F 8等）、從氣體源100b供給的氧（O 2）氣、及從氣體源100c供給的氬（Ar）氣對基板W施行蝕刻處理之情況為例而進行說明。從氣體源100a供給的CF系氣體，藉由流量控制單元110a控制其供給流量。從氣體源100b供給的氧氣，藉由流量控制單元110b控制其供給流量。從氣體源100c供給的氬氣，藉由流量控制單元110c控制其供給流量。 In addition, in this embodiment, as an example, the three kinds of gases are CF-based gas (such as C 4 F 6 , C 4 F 8 ) supplied from the gas source 100a, and oxygen (O 2 ) gas supplied from the gas source 100b. , and a case where the substrate W is etched with argon (Ar) gas supplied from the gas source 100 c will be described as an example. The supply flow rate of the CF-based gas supplied from the gas source 100a is controlled by the flow rate control unit 110a. The supply flow rate of the oxygen gas supplied from the gas source 100b is controlled by the flow rate control unit 110b. The supply flow rate of the argon gas supplied from the gas source 100c is controlled by the flow rate control unit 110c.

圖8係顯示晶圓處理之主要製程中的流量控制器111之動作的說明圖。此外，圖9係顯示圖8所示之主要製程中的壓力感測器114、115之測定值，亦即一次側內部供給管112a及二次側內部供給管112b之內部壓力的圖表。進一步，圖10係一實施形態之晶圓處理的時序圖。另，於圖8中，包含流量控制單元110所具備的3個流量控制器111c、111m、111e在內，將其等圖示為流量控制器111。亦即，圖8所記載的流量控制器111，表示流量控制器111c、111m、111e中的任一流量控制器111。此等流量控制器111c、111m、111e之動作皆相同。FIG. 8 is an explanatory diagram showing the operation of the flow controller 111 in the main process of wafer processing. In addition, FIG. 9 is a graph showing the measured values of the pressure sensors 114 and 115 in the main process shown in FIG. 8, that is, the internal pressures of the primary internal supply pipe 112a and the secondary internal supply pipe 112b. Further, FIG. 10 is a timing diagram of wafer processing in one embodiment. In addition, in FIG. 8 , including three flow controllers 111 c , 111 m , and 111 e included in the flow control unit 110 , these are shown as the flow controller 111 . That is, the flow controller 111 shown in FIG. 8 represents any one of the flow controllers 111c, 111m, and 111e. The actions of these flow controllers 111c, 111m, and 111e are the same.

開始電漿處理腔室10內之對於基板W的蝕刻處理時，首先，將流量控制單元110c之一次側閥121c及二次側閥141c開放，開始Ar氣體的往電漿處理腔室10之供給（圖10之步驟St0）。Ar氣體，作為蝕刻處理中的載氣而作用，於一連串之該蝕刻處理中，恆常地持續供給Ar氣體。When starting the etching process on the substrate W in the plasma processing chamber 10, first, the primary side valve 121c and the secondary side valve 141c of the flow control unit 110c are opened, and the supply of Ar gas to the plasma processing chamber 10 is started. (Step St0 of FIG. 10). The Ar gas functions as a carrier gas in the etching process, and the Ar gas is constantly supplied in a series of the etching processes.

另，往電漿處理腔室10內供給的Ar氣體，藉由流量控制單元110c之3個流量控制器111c、111m、111e，個別地控制對於噴淋頭13的各氣體供給口14c、14m、14e之流量。往電漿處理腔室10內供給的Ar氣體，亦可從另一氣體供給部160供給。 此外，於一例中，往電漿處理腔室10內供給的氬氣之供給流量，較從氣體源100a供給的CF系氣體、及從氣體源100b供給的氧氣之供給流量更大。 In addition, the Ar gas supplied into the plasma processing chamber 10 is individually controlled to each gas supply port 14c, 14m, 14e traffic. The Ar gas supplied into the plasma processing chamber 10 may also be supplied from another gas supply unit 160 . In addition, in one example, the supply flow rate of the argon gas supplied into the plasma processing chamber 10 is larger than the supply flow rate of the CF-based gas supplied from the gas source 100a and the supply flow rate of oxygen gas supplied from the gas source 100b.

接著，如圖8（a）所示，將流量控制單元110a之一次側閥121a及二次側閥141a開放，開始CF系氣體的往電漿處理腔室10內之供給（圖9、圖10之步驟St1）。在步驟St1，將從氣體源100a導入至流量控制器111的氣體，藉由孔口113縮緊其流量後往電漿處理腔室10供給。換而言之，二次側內部供給管112b之內部壓力，較一次側內部供給管112a之內部壓力成為更低。 在步驟St1，藉由供給至電漿處理腔室10內之CF系氣體，而於基板W上形成CF系沉積物（以下有稱作「沉積步驟」的情況）。 Next, as shown in FIG. 8(a), the primary side valve 121a and the secondary side valve 141a of the flow control unit 110a are opened, and the supply of CF-based gas to the plasma processing chamber 10 is started (FIG. 9, FIG. 10 Step St1). In step St1 , the gas introduced from the gas source 100 a to the flow controller 111 is supplied to the plasma processing chamber 10 after its flow rate is reduced through the orifice 113 . In other words, the internal pressure of the secondary-side internal supply pipe 112b becomes lower than the internal pressure of the primary-side internal supply pipe 112a. In step St1, a CF-based deposit is formed on the substrate W by the CF-based gas supplied into the plasma processing chamber 10 (hereinafter sometimes referred to as "deposition step").

另，往電漿處理腔室10內供給的CF系氣體，藉由流量控制單元110a之3個流量控制器111c、111m、111e，個別地控制對於噴淋頭13的各氣體供給口14c、14m、14e之流量。換而言之，藉由個別地控制CF系氣體之對於基板W的各中心區域、中間區域及邊緣區域之供給流量，而控制CF系沉積物的對於此等中心區域、中間區域及邊緣區域之各自的形成量。In addition, the CF-based gas supplied into the plasma processing chamber 10 is individually controlled to each gas supply port 14c, 14m of the shower head 13 by the three flow controllers 111c, 111m, 111e of the flow control unit 110a. , The traffic of 14e. In other words, by individually controlling the supply flow rate of the CF-based gas to each of the central, intermediate, and edge regions of the substrate W, the flow rate of the CF-based deposit to these central, intermediate, and edge regions is controlled. respective formations.

若於基板W上形成CF系沉積物，則接著如圖8（b）所示，將流量控制單元110a之一次側閥121a及二次側閥141a關閉，停止CF系氣體的往電漿處理腔室10內之供給（圖9、圖10之步驟St2）。在步驟St2，由於將一次側閥121a及二次側閥141a關閉，而將流量控制器111、一次側供給管120及二次側供給管140之內部與外部隔斷。藉此，使一次側供給管120內的氣體經由孔口往二次側供給管140內移動，使一次側供給管120與二次側供給管140之內部壓力略一致而成為平衡狀態。If CF-based deposits are formed on the substrate W, then as shown in Figure 8(b), the primary side valve 121a and the secondary side valve 141a of the flow control unit 110a are closed to stop the flow of CF-based gas into the plasma processing chamber. Supply in the chamber 10 (step St2 in FIG. 9 and FIG. 10 ). In step St2, since the primary side valve 121a and the secondary side valve 141a are closed, the inside and the outside of the flow controller 111, the primary side supply pipe 120, and the secondary side supply pipe 140 are blocked. Thereby, the gas in the primary side supply pipe 120 moves into the secondary side supply pipe 140 through the orifice, and the internal pressures of the primary side supply pipe 120 and the secondary side supply pipe 140 are approximately equal to a balanced state.

接著，如圖8（c）所示，將流量控制單元110a之一次側排氣閥132a及二次側排氣閥152a開放，將施行過CF系氣體之供給的流量控制單元110a（流量控制器111）之內部排氣（圖9、圖10之步驟St3：以下有稱作「第1排氣步驟」的情況）。更具體而言，藉由將一次側排氣閥132a開放，而以排氣單元131將一次側供給管120及一次側內部供給管112a之內部排氣，並藉由將二次側排氣閥152a開放，而以排氣單元151將二次側供給管140及二次側內部供給管112b之內部排氣。另，為了適當地抑制圖1所示的尖波S之發生，作為一例，宜將以排氣單元151進行的流量控制單元110a（流量控制器111）之排氣，施行直至流量控制單元110a內之壓力成為未滿流量控制時（沉積步驟時）之內部壓力為止，較佳態樣中為將流量控制單元110a內的氣體完全排氣為止。Next, as shown in FIG. 8(c), the primary side exhaust valve 132a and the secondary side exhaust valve 152a of the flow control unit 110a are opened, and the flow control unit 110a (flow controller) that has been supplied with CF-based gas is opened. 111) Internal exhaust (step St3 in FIG. 9 and FIG. 10: hereinafter may be referred to as "the first exhaust step"). More specifically, by opening the primary side exhaust valve 132a, the inside of the primary side supply pipe 120 and the primary side internal supply pipe 112a are exhausted by the exhaust unit 131, and by opening the secondary side exhaust valve 152a is opened, and the inside of the secondary-side supply pipe 140 and the secondary-side internal supply pipe 112b is exhausted by the exhaust unit 151 . In addition, in order to properly suppress the occurrence of the sharp wave S shown in FIG. 1, as an example, it is preferable to exhaust the flow control unit 110a (flow controller 111) by the exhaust unit 151 until it reaches the inside of the flow control unit 110a. Until the pressure becomes less than the internal pressure at the time of flow control (during the deposition step), in a preferred embodiment, the gas inside the flow control unit 110a is completely exhausted.

本實施形態中，如此地使用在流量控制器111之上游側及下游側分別連接的排氣單元131及排氣單元151，將流量控制器111之內部排氣。藉此，即便為流量控制器111具備孔口113的情況，仍可適當地縮短該孔口113上游側之一次側內部供給管112a及下游側之二次側內部供給管112b的排氣所需之時間，此外，可適當地抑制氣體殘留於此等一次側內部供給管112a及二次側內部供給管112b。In this embodiment, the inside of the flow controller 111 is exhausted using the exhaust unit 131 and the exhaust unit 151 respectively connected to the upstream side and the downstream side of the flow controller 111 in this way. Thereby, even if the flow controller 111 is provided with the orifice 113, it is possible to appropriately shorten the exhaust requirements of the primary internal supply pipe 112a on the upstream side of the orifice 113 and the secondary internal supply pipe 112b on the downstream side. In addition, it is possible to appropriately suppress gas remaining in the primary-side internal supply pipe 112a and the secondary-side internal supply pipe 112b.

接著，如圖8（d）所示，將流量控制單元110a之控制閥116、一次側排氣閥132a及二次側排氣閥152a關閉，停止流量控制單元110a之排氣（圖9、圖10之步驟St4）。 在步驟St4，由於將一次側閥121a及二次側閥141a關閉，而將流量控制器111、一次側供給管120及二次側供給管140之內部與外部隔斷。藉此，使一次側供給管120內的氣體經由孔口往二次側供給管140內移動，使一次側供給管120與二次側供給管140之內部壓力略一致而成為平衡狀態。 Next, as shown in Figure 8(d), the control valve 116, the primary side exhaust valve 132a and the secondary side exhaust valve 152a of the flow control unit 110a are closed, and the exhaust of the flow control unit 110a is stopped (Figure 9, Fig. Step St4 of 10). In step St4, since the primary side valve 121a and the secondary side valve 141a are closed, the inside and the outside of the flow controller 111, the primary side supply pipe 120, and the secondary side supply pipe 140 are blocked. Thereby, the gas in the primary side supply pipe 120 moves into the secondary side supply pipe 140 through the orifice, and the internal pressures of the primary side supply pipe 120 and the secondary side supply pipe 140 are approximately equal to a balanced state.

另，亦可於第1排氣步驟（步驟St3）的結束後，藉由如圖8（e）所示地，將流量控制器111之控制閥116及流量控制單元110a之二次側閥141a開放，而確認流量控制器111內的殘留氣體已適當地排氣（圖9、圖10之步驟St5）。In addition, after the end of the first exhaust step (step St3), as shown in Figure 8(e), the control valve 116 of the flow controller 111 and the secondary side valve 141a of the flow control unit 110a Open, and confirm that the residual gas in the flow controller 111 has been properly exhausted (step St5 in FIG. 9 and FIG. 10 ).

另，在下述說明中，有將步驟St1至步驟St5，換而言之，將前述沉積步驟與第1排氣步驟一併稱作「沉積程序（第1程序）」的情況。In addition, in the following description, step St1 to step St5, in other words, the aforementioned deposition step and the first exhaust step may be collectively referred to as a "deposition process (first process)".

接著，將流量控制單元110b之一次側閥121b及二次側閥141b開放，開始O 2氣體的往電漿處理腔室10內之供給（參考圖8（a））。此外，與此同時，開始射頻訊號（射頻電力）的從射頻電源31往基板支持部11之導電性構件（下部電極）及／或噴淋頭13之導電性構件（上部電極）之供給（圖9、圖10之步驟St6）。在步驟St6，將從氣體源100b導入至流量控制器111的氣體，藉由孔口113縮緊其流量後往電漿處理腔室10供給。換而言之，二次側內部供給管112b之內部壓力，較一次側內部供給管112a之內部壓力成為更低。 在步驟St6，產生源自於供給至電漿處理腔室10內之O 2氣體的電漿，將基板W蝕刻（以下有稱作「蝕刻步驟」的情況）。 Next, the primary side valve 121b and the secondary side valve 141b of the flow control unit 110b are opened, and the supply of O 2 gas into the plasma processing chamber 10 is started (see FIG. 8( a )). In addition, at the same time, the supply of the radio frequency signal (radio frequency power) from the radio frequency power source 31 to the conductive member (lower electrode) of the substrate support portion 11 and/or the conductive member (upper electrode) of the shower head 13 is started (Fig. 9. Step St6 in Figure 10). In step St6 , the gas introduced into the flow controller 111 from the gas source 100 b is supplied to the plasma processing chamber 10 after being compressed by the orifice 113 . In other words, the internal pressure of the secondary-side internal supply pipe 112b becomes lower than the internal pressure of the primary-side internal supply pipe 112a. In step St6, plasma derived from the O 2 gas supplied into the plasma processing chamber 10 is generated to etch the substrate W (hereinafter sometimes referred to as "etching step").

另，往電漿處理腔室10內供給的O 2氣體，藉由流量控制單元110b之3個流量控制器111c、111m、111e，個別地控制對於噴淋頭13的各氣體供給口14c、14m、14e之流量。換而言之，藉由個別地控制O 2氣體之對於基板W的各中心區域、中間區域及邊緣區域之供給流量，而個別地控制此等中心區域、中間區域及邊緣區域中的基板W之蝕刻量。 In addition, the O2 gas supplied into the plasma processing chamber 10 is individually controlled to each gas supply port 14c, 14m of the shower head 13 by the three flow controllers 111c, 111m, 111e of the flow control unit 110b. , The traffic of 14e. In other words, by individually controlling the supply flow rate of O2 gas to each of the central, intermediate, and edge regions of the substrate W, the flow rate of the substrate W in the central, intermediate, and edge regions of the substrate W is individually controlled. amount of etching.

若基板W的蝕刻完成，則接著，將流量控制單元110b之一次側閥121b及二次側閥141b關閉，停止O 2氣體的往電漿處理腔室10內之供給（參考圖9、圖10之步驟St7：圖8（b））。 在步驟St7，由於將一次側閥121b及二次側閥141b關閉，而將流量控制器111、一次側供給管120及二次側供給管140之內部與外部隔斷。藉此，使一次側供給管120內的氣體經由孔口往二次側供給管140內移動，使一次側供給管120與二次側供給管140之內部壓力略一致而成為平衡狀態。 If the etching of the substrate W is completed, then, the primary side valve 121b and the secondary side valve 141b of the flow control unit 110b are closed, and the supply of O gas to the plasma processing chamber 10 is stopped (see FIGS. 9 and 10 . Step St7: Figure 8(b)). In step St7, since the primary side valve 121b and the secondary side valve 141b are closed, the inside and the outside of the flow controller 111, the primary side supply pipe 120, and the secondary side supply pipe 140 are blocked. Thereby, the gas in the primary side supply pipe 120 moves into the secondary side supply pipe 140 through the orifice, and the internal pressures of the primary side supply pipe 120 and the secondary side supply pipe 140 are approximately equal to a balanced state.

接著，將流量控制單元110b之一次側排氣閥132b及二次側排氣閥152b開放（參考圖8（c）），將施行過O 2氣體之供給的流量控制單元110b（流量控制器111）之內部排氣（圖9、圖10之步驟St8：以下有稱作「第2排氣步驟」的情況）。更具體而言，藉由將一次側排氣閥132b開放，而以排氣單元131將一次側供給管120及一次側內部供給管112a之內部，並藉由將二次側排氣閥152a開放，而以排氣單元151將二次側供給管140及二次側內部供給管112b之內部排氣。另，流量控制單元110b之詳細的排氣方法，與步驟St3中之流量控制單元110a的排氣方法相同。另，為了適當地抑制圖1所示的尖波S之發生，作為一例，宜將以排氣單元151進行的流量控制單元110b（流量控制器111）之排氣，施行直至流量控制單元110b內之壓力成為未滿流量控制時（蝕刻步驟時）之內部壓力為止，較佳態樣中為將流量控制單元110b內的氣體完全排氣為止。 Next, the primary side exhaust valve 132b and the secondary side exhaust valve 152b of the flow control unit 110b are opened (refer to FIG. 8(c)), and the flow control unit 110b (flow controller 111 ) of internal exhaust (step St8 in Fig. 9 and Fig. 10: hereinafter referred to as "the second exhaust step"). More specifically, by opening the primary side exhaust valve 132b, the inside of the primary side supply pipe 120 and the primary side internal supply pipe 112a are sealed by the exhaust unit 131, and by opening the secondary side exhaust valve 152a , and the inside of the secondary-side supply pipe 140 and the secondary-side internal supply pipe 112 b is exhausted by the exhaust unit 151 . In addition, the detailed exhaust method of the flow control unit 110b is the same as the exhaust method of the flow control unit 110a in step St3. In addition, in order to properly suppress the occurrence of the sharp wave S shown in FIG. 1, as an example, it is preferable to exhaust the flow control unit 110b (flow controller 111) performed by the exhaust unit 151 until the inside of the flow control unit 110b. Until the pressure becomes less than the internal pressure at the time of flow control (at the time of etching step), in a preferred embodiment, the gas in the flow control unit 110b is completely exhausted.

接著，將流量控制單元110b之控制閥116、一次側排氣閥132b及二次側排氣閥152b關閉，停止流量控制單元110b之排氣（參考圖9、圖10之步驟St9：圖8（d））。 在步驟St9，由於將一次側閥121b及二次側閥141b關閉，而將流量控制器111、一次側供給管120及二次側供給管140之內部與外部隔斷。藉此，使一次側供給管120內的氣體經由孔口往二次側供給管140內移動，使一次側供給管120與二次側供給管140之內部壓力略一致而成為平衡狀態。 Then, the control valve 116 of the flow control unit 110b, the primary side exhaust valve 132b and the secondary side exhaust valve 152b are closed, and the exhaust of the flow control unit 110b is stopped (refer to FIG. 9, Step St9 of FIG. 10: FIG. 8( d)). In step St9, since the primary side valve 121b and the secondary side valve 141b are closed, the inside and the outside of the flow controller 111, the primary side supply pipe 120, and the secondary side supply pipe 140 are blocked. Thereby, the gas in the primary side supply pipe 120 moves into the secondary side supply pipe 140 through the orifice, and the internal pressures of the primary side supply pipe 120 and the secondary side supply pipe 140 are approximately equal to a balanced state.

另，亦可於第2排氣步驟（步驟St8）的結束後，藉由將流量控制器111之控制閥116及流量控制單元110a之二次側閥141a開放（參考圖8（e）），而確認流量控制器111內的殘留氣體已適當地排氣（圖9、圖10之步驟St10）。In addition, after the end of the second exhaust step (step St8), by opening the control valve 116 of the flow controller 111 and the secondary side valve 141a of the flow control unit 110a (refer to FIG. 8( e )), Then, it is confirmed that the residual gas in the flow controller 111 has been properly exhausted (step St10 in FIG. 9 and FIG. 10 ).

另，在下述說明中，有將步驟St6至步驟St10，換而言之，有將前述蝕刻步驟與第2排氣步驟一併稱作「蝕刻程序（第2程序）」的情況。In addition, in the following description, step St6 to step St10, in other words, the aforementioned etching step and the second evacuation step may be collectively referred to as an "etching process (second process)".

於本實施形態中，將包含上述之作為沉積程序的第1程序（步驟St1～St5）與作為蝕刻程序的第2程序（步驟St6～St10）之程序循環，如圖10所示地對基板W重複實行，直至獲得期望的蝕刻量為止。另，於一例中，1次循環所需之時間，例如為1～10秒，宜使沉積程序為0.5秒～3秒，蝕刻程序為0.5秒～7秒，更宜使沉積程序為1秒～2秒，蝕刻程序為3秒～5秒。In this embodiment, the above-described first process (steps St1 to St5) as a deposition process and the second process (steps St6 to St10) as an etching process are cycled, and the substrate W is treated as shown in FIG. 10 . Repeat until the desired amount of etching is obtained. In addition, in one example, the time required for one cycle is, for example, 1 to 10 seconds, preferably the deposition process is 0.5 seconds to 3 seconds, the etching process is 0.5 seconds to 7 seconds, and the deposition process is more preferably 1 second to 7 seconds. 2 seconds, and the etching program is 3 seconds to 5 seconds.

而後，若重複施行1次以上的期望次數之循環，則判定是否需要進一步的蝕刻處理之循環（沉積程序（第1程序）及蝕刻程序（第2程序）），判定為需要的情況，如圖10所示地返回步驟St，重複第1程序及第2程序之處理。此外，判定為不需要進一步的蝕刻處理之循環的情況，結束對於基板W之蝕刻處理。Then, if the desired number of cycles is repeated more than once, it is determined whether a further cycle of etching treatment (deposition process (first process) and etching process (second process)) is required, and it is determined that it is necessary, as shown in the figure Return to step St as shown in 10, and repeat the processing of the first program and the second program. In addition, when it is determined that a further cycle of the etching process is unnecessary, the etching process on the substrate W is terminated.

另，判定為需要進一步的蝕刻處理之程序循環的情況，如圖10所示，再度施行CF系氣體及O 2氣體的從流量控制單元110a及流量控制單元110b往電漿處理腔室10之供給。此時，在必須再度開始來自氣體源100a、100b的氣體之供給，但係從如圖8（d）所示地流量控制單元110之內部已抽真空的狀態開始氣體之供給的情況，必須於氣體的往電漿處理腔室10之供給開始前，進行氣體的對於流量控制單元110之充填，因此程序的重新開始需要時間。 In addition, when it is determined that the program cycle of further etching processing is necessary, as shown in FIG . . At this time, when it is necessary to restart the supply of gas from the gas sources 100a, 100b, but it is necessary to start the supply of gas from the state where the inside of the flow control unit 110 has been evacuated as shown in FIG. The filling of the flow rate control unit 110 with the gas is performed before the supply of the gas to the plasma processing chamber 10 is started, so it takes time to restart the process.

因而，本實施形態之電漿處理中，即便為如此地使蝕刻處理之程序的循環重複之情況，尤其是使氣體供給部20具有對一個流量控制單元110供給一種氣體之單系統的構成之情況，亦可於往電漿處理腔室10的氣體供給之重新開始前，進行控制前準備。具體而言，如圖11（e）所示，藉由將流量控制單元110之一次側閥121開放，而將氣體往一次側供給管120之內部充填，並藉由將二次側閥141開放，而使內部供給管112及二次側供給管140之內部壓力與電漿處理腔室10之內部壓力平衡。 藉此，可縮短使程序重新開始時，來自氣體源100的氣體之充填所需的時間，並可抑制氣體急遽地往電漿處理腔室10內流入，可更適當地抑制圖1所示的尖波S之發生。 Therefore, in the plasma processing of this embodiment, even when the cycle of the etching process is repeated in this way, especially when the gas supply unit 20 has a single-system configuration for supplying one gas to one flow control unit 110 , before restarting the gas supply to the plasma processing chamber 10, pre-control preparations may be performed. Specifically, as shown in FIG. 11( e ), by opening the primary side valve 121 of the flow control unit 110 , the gas is filled into the primary side supply pipe 120 , and by opening the secondary side valve 141 , so that the internal pressure of the internal supply pipe 112 and the secondary supply pipe 140 and the internal pressure of the plasma processing chamber 10 are balanced. Thereby, the time required for filling the gas from the gas source 100 can be shortened when the process is restarted, and the rapid inflow of gas into the plasma processing chamber 10 can be suppressed, and the gas flow shown in FIG. 1 can be more appropriately suppressed. The occurrence of sharp wave S.

另，圖11（a）～（d）所示之步驟，與圖8（a）～（d）所示之步驟相同。此一情況，亦可將與圖8（e）對應之確認流量控制器111內的殘留氣體已適當地排氣之確認步驟（步驟St5、步驟St10），如圖11所示地省略；此外，雖圖示省略，但亦可於該確認步驟（步驟St5、步驟St10）後，施行圖11（e）所示的一次側閥121及二次側閥141之開放。In addition, the steps shown in Fig. 11(a) - (d) are the same as the steps shown in Fig. 8(a) - (d). In this case, the steps of confirming that the residual gas in the flow controller 111 corresponding to Fig. 8(e) has been properly exhausted (step St5, step St10) can also be omitted as shown in Fig. 11; in addition, Although illustration is omitted, the opening of the primary side valve 121 and the secondary side valve 141 shown in FIG. 11( e ) may be performed after the confirmation step (step St5 , step St10 ).

＜第1實施形態之晶圓處理的效果等＞ 圖12為顯示用於檢討上述實施形態之電漿處理裝置1的效果之比較結果的圖表，其顯示與僅使用連接至孔口113之上游側的排氣單元131進行排氣之情況（圖1所示之Type1）比較的結果。另，於圖12所示之比較例（Type1）及實施例中，皆對流量控制器111施行短時間（作為一例為1秒程度）的抽真空。 <Effects of wafer processing in the first embodiment, etc.> FIG. 12 is a graph showing comparison results for examining the effects of the plasma processing apparatus 1 of the above-mentioned embodiment, which shows the case of exhausting only using the exhaust unit 131 connected to the upstream side of the orifice 113 (FIG. 1 Type1) shown in the comparison result. In addition, in both the comparative example (Type 1) and the working example shown in FIG. 12 , the flow controller 111 was evacuated for a short time (about 1 second as an example).

如圖12所示，僅使用連接至孔口113之上游側的排氣單元131進行排氣之情況，其後，於二次側閥141之開放時，有發生源自於殘留在二次側內部供給管112b之氣體的尖波S之擔憂。尤其在流量控制器111之抽真空時間短的情況，此發生尖波S之擔憂變大。 關於此點，於本實施形態中，得知藉由進一步使用連接至孔口113之下游側的排氣單元151進行排氣，即便為流量控制器111之抽真空時間短的情況（本實施例中為1秒程度），仍可抑制尖波S之發生。 As shown in FIG. 12 , in the case of exhausting only using the exhaust unit 131 connected to the upstream side of the orifice 113, thereafter, when the secondary side valve 141 is opened, there occurs The sharp wave S of the gas in the internal supply pipe 112b is a concern. In particular, when the evacuation time of the flow controller 111 is short, there is a greater concern that the sharp wave S will be generated. In this regard, in this embodiment, it is known that by further using the exhaust unit 151 connected to the downstream side of the orifice 113 to perform exhaust, even if the evacuation time of the flow controller 111 is short (the present embodiment In the case of about 1 second), it can still suppress the occurrence of sharp wave S.

圖13係顯示上述第1排氣步驟（步驟St3）及第2排氣步驟（步驟St8）中之抽真空時間與流量控制器111之內部壓力的關係之圖表。 此處，為了適當地抑制程序重新開始時的尖波S之發生，必須在抽真空時，使流量控制器111之內部壓力，較流量控制時（進行程序時）之壓力更低。關於此點，如圖13所示，發現藉由如同上述地在流量控制器111的孔口113與二次側閥141之間設置排氣管線，即便為使抽真空時間為2秒以下，更詳而言之為0.5秒的情況，仍可將流量控制器111之內部減壓為較流量控制時的壓力更低的壓力。 亦即，本案發明人等發現，可將上述第1排氣步驟（步驟St3）及第2排氣步驟（步驟St8）的抽真空所需之時間縮短至0.5秒以下。 FIG. 13 is a graph showing the relationship between the evacuation time and the internal pressure of the flow controller 111 in the first exhaust step (step St3) and the second exhaust step (step St8). Here, in order to properly suppress the occurrence of the spike S when the program is restarted, it is necessary to make the internal pressure of the flow controller 111 lower than that during the flow control (when the program is running) during vacuuming. In this regard, as shown in FIG. 13 , it was found that by providing an exhaust line between the orifice 113 of the flow controller 111 and the secondary side valve 141 as described above, even if the evacuation time is 2 seconds or less, it is more effective. More specifically, in the case of 0.5 seconds, the inside of the flow controller 111 can still be decompressed to a pressure lower than the pressure during flow control. That is, the inventors of the present invention found that the time required for vacuuming in the first exhaust step (step St3 ) and the second exhaust step (step St8 ) can be shortened to 0.5 seconds or less.

如此地，依本施形態之電漿處理裝置1，則在往電漿處理腔室10的內部供給氣體之氣體供給部20中，於流量控制器111的孔口113與二次側閥141之間，設置排氣管線（二次側排氣管150、排氣單元151及二次側排氣閥152）。藉此，在電漿處理中的程序之間（依上述實施形態，則為沉積步驟與蝕刻步驟之間），將流量控制器111內在短時間抽真空，可適當地抑制程序重新開始時的尖波S之發生。In this way, in the plasma processing apparatus 1 according to this embodiment, in the gas supply unit 20 that supplies gas to the inside of the plasma processing chamber 10, between the orifice 113 of the flow controller 111 and the secondary side valve 141 Between them, an exhaust pipeline (secondary side exhaust pipe 150, exhaust unit 151, and secondary side exhaust valve 152) is provided. In this way, between the procedures in the plasma treatment (according to the above embodiment, between the deposition step and the etching step), the inside of the flow controller 111 is evacuated for a short period of time, and the spike when the procedure is restarted can be appropriately suppressed. The occurrence of wave S.

此外，依上述實施形態，則如圖11（e）所示，於往電漿處理腔室10的氣體供給之重新開始前，作為控制前準備，施行往一次側供給管120內部之氣體充填、以及內部供給管112及二次側供給管140與電漿處理腔室10的內部壓力之平衡化。藉此，可適當地縮短程序重新開始時之往流量控制器111的氣體充填所需之時間，並可更適當地抑制程序重新開始時的尖波S之發生。In addition, according to the above-mentioned embodiment, as shown in FIG. 11( e ), before restarting the gas supply to the plasma processing chamber 10 , as a pre-control preparation, gas filling into the primary side supply pipe 120 is performed, And the internal pressure of the internal supply pipe 112 and the secondary side supply pipe 140 and the plasma processing chamber 10 is balanced. Thereby, the time required for filling the flow controller 111 with gas at the restart of the program can be appropriately shortened, and the occurrence of the sharp wave S at the restart of the program can be more properly suppressed.

另，上述實施形態中，在流量控制單元110（流量控制器111）的抽真空中，宜施行至流量控制單元110內之壓力成為未滿流量控制時（沉積步驟時或蝕刻步驟時）之內部壓力為止，較佳態樣為施行至將流量控制單元110b內的氣體完全排氣為止。然而，流量控制單元110（流量控制器111）的抽真空後之到達壓力，並未限定於此一形態。In addition, in the above-mentioned embodiment, in the evacuation of the flow control unit 110 (flow controller 111), it is preferable to carry out until the pressure in the flow control unit 110 becomes less than the inside of the flow control (during the deposition step or the etching step). It is preferable to implement until the gas in the flow control unit 110b is completely exhausted. However, the attained pressure of the flow control unit 110 (flow controller 111 ) after vacuuming is not limited to this form.

具體而言，如同上述，尤其在使氣體供給部20具有對一個流量控制單元110供給一種氣體之單系統的構成之情況，在該流量控制單元110的內部中之複數種氣體的混合之發生受到抑制。因此，在如此地以單系統構成流量控制單元110（流量控制器111）的情況中，亦可於抽真空時不將該流量控制單元110內的氣體完全排氣，而使其一部分殘留。Specifically, as described above, especially when the gas supply unit 20 has a single-system configuration for supplying one gas to one flow control unit 110, the occurrence of mixing of the plurality of gases in the flow control unit 110 is subject to inhibition. Therefore, even when the flow control unit 110 (flow controller 111 ) is configured as a single system in this way, the gas in the flow control unit 110 may not be completely exhausted during vacuuming, but a part may remain.

如同上述，藉由使流量控制單元110內之壓力未滿流量控制時之內部壓力，而可適當地抑制程序重新開始時的尖波S之發生。另一方面，重要的點尤其在於，在基板W之蝕刻程序中，使電漿處理腔室的內部之電漿的啟動時間減短（使圖1所示之圖形的斜率增大）。而本案發明人等發現，藉由使殘留在流量控制單元110（流量控制器111）內之氣體，於程序重新開始時往電漿處理腔室10的內部流入，而可使此等電漿的啟動時間更短。換而言之，本案發明人等發現，於流量控制單元110（流量控制器111）的抽真空中，可抑制程序重新開始時的尖波S之發生，且藉由施行抽真空至成為能夠將電漿的啟動時間縮短之壓力，而可更適宜地實行基板W的蝕刻處理。As mentioned above, by keeping the pressure inside the flow control unit 110 lower than the internal pressure at the time of flow control, the occurrence of the spike S at the restart of the program can be appropriately suppressed. On the other hand, it is particularly important to shorten the plasma start-up time inside the plasma processing chamber (increase the slope of the graph shown in FIG. 1 ) during the etching process of the substrate W. The inventors of the present case found that by making the gas remaining in the flow control unit 110 (flow controller 111) flow into the inside of the plasma processing chamber 10 when the process is restarted, the flow of these plasmas can be improved. Startup time is shorter. In other words, the inventors of the present application found that in the vacuuming of the flow control unit 110 (flow controller 111), the occurrence of the sharp wave S at the restart of the process can be suppressed, and by performing vacuuming, it becomes possible to The plasma start-up time is shortened, and the etching process of the substrate W can be performed more suitably.

而在本案發明人等進行精心檢討後發現，藉由使抽真空後的流量控制單元110（流量控制器111）之內部壓力例如為100Torr以下，宜為50Torr以下，而可抑制程序重新開始時的尖波S之發生，並適宜地縮短電漿的啟動時間。After careful examination, the inventors of the present case found that by making the internal pressure of the flow control unit 110 (flow controller 111) after evacuation be below 100 Torr, for example, preferably below 50 Torr, it is possible to suppress the pressure at the restart of the process. The generation of sharp wave S, and suitably shorten the starting time of plasma.

此外，本發明所揭露之技術，即便為如此地將抽真空時間縮短的情況，仍可將流量控制器111之內部適當地排氣，因而特別適合應用在氣體供給部20具有雙系統以上的構成之情況（參考圖6）。In addition, the technology disclosed in the present invention can properly exhaust the inside of the flow controller 111 even if the vacuuming time is shortened in this way, so it is particularly suitable for application in the configuration where the gas supply part 20 has more than two systems. The situation (refer to Figure 6).

具體而言，使氣體供給部20具有雙系統以上的構成之情況，亦即，對一個流量控制器111供給2種以上的氣體之情況，必須抑制不同種類的氣體在該流量控制器111之內部混合。換而言之，在將對於流量控制器111的一種氣體之供給，切換為其他氣體之供給前，必須從流量控制器111之內部將作為殘留氣體的一種氣體充分地排氣。Specifically, when the gas supply unit 20 has a configuration of more than two systems, that is, when two or more types of gases are supplied to one flow controller 111, it is necessary to prevent the flow of different types of gases inside the flow controller 111. mix. In other words, before the supply of one gas to the flow controller 111 is switched to the supply of the other gas, it is necessary to fully exhaust the one gas that is the residual gas from inside the flow controller 111 .

關於此點，本案發明人等發現，在習知之排氣方法（例如圖1所示之Type1）中，為了從流量控制器111將殘留氣體排氣至可抑制在電漿處理腔室10的殘留氣體之影響的程度，而如圖14所示地需要60秒程度之抽真空，但依本實施形態，即便為2秒程度之抽真空仍可充分地抑制殘留氣體之影響。 亦即，發現為了抑制流量控制器111之內部中的一種氣體與其他氣體之混合，過去必須將一種氣體之排氣施行60秒程度，但藉由進一步施行在孔口113的下游側之抽真空，而可將此一種氣體之排氣時間縮短為2秒程度。換而言之，發現可改善流量控制器111之抽真空的下降回應性。 Regarding this point, the inventors of the present application found that in the conventional exhaust method (such as Type 1 shown in FIG. 1 ), in order to exhaust the residual gas from the flow controller 111 to the extent that the residual gas in the plasma processing chamber 10 can be suppressed The degree of influence of gas requires about 60 seconds of vacuuming as shown in FIG. 14 , but according to this embodiment, the influence of residual gas can be sufficiently suppressed even if it is about 2 seconds of vacuuming. That is, it was found that in order to suppress the mixing of one gas with the other gas in the inside of the flow controller 111, it was necessary to perform exhausting of one gas for about 60 seconds in the past, but by further performing evacuation on the downstream side of the orifice 113 , and the exhaust time of this kind of gas can be shortened to about 2 seconds. In other words, it was found that the drop responsiveness of the flow controller 111 to vacuum can be improved.

如此地，依本實施形態，則尤其在氣體供給部20具有雙系統以上的構成之情況，成為可瞬時切換對於一個流量控制器111的來自不同氣體源100之氣體供給。In this way, according to this embodiment, especially when the gas supply unit 20 has a configuration of two or more systems, it becomes possible to instantaneously switch the gas supply from different gas sources 100 to one flow controller 111 .

＜晶圓處理方法（第2實施形態）＞ 此處，如同上述，要點在於在基板W之蝕刻程序中，使電漿處理腔室的內部之電漿的啟動時間減短（下稱「改善上升回應性」）。然而，如同上述實施形態所示，在使程序重新開始時施行流量控制器111之抽真空（第1排氣步驟及第2排氣步驟）的情況，若於內部供給管112與二次側供給管140具有內部壓力差的狀態下將二次側閥141開放，則例如發生Ar氣體的從二次側供給管140往內部供給管112之流入等，而有CF系氣體的從流量控制器111往電漿處理腔室10之供給發生延遲，使蝕刻處理之上升回應性惡化的情況。 如同上述，將往電漿處理腔室10內供給的氬氣之供給流量，設定為較從氣體源100a供給的CF系氣體、及從氣體源100b供給的氧氣之供給流量更大。因此，由於二次側閥141的開放對象即二次側供給管140之內部壓力上升，故此一上升回應性的惡化特別受到擔憂。 <Wafer Processing Method (Second Embodiment)> Here, as mentioned above, the point is to shorten the start-up time of the plasma in the plasma processing chamber in the etching process of the substrate W (hereinafter referred to as "improvement of rising responsiveness"). However, as in the above-mentioned embodiment, when the flow controller 111 is evacuated (the first exhaust step and the second exhaust step) when the program is restarted, if the internal supply pipe 112 and the secondary side supply When the secondary side valve 141 is opened in the state where the pipe 140 has an internal pressure difference, for example, the inflow of Ar gas from the secondary side supply pipe 140 to the internal supply pipe 112 occurs, and there is flow of CF-based gas from the flow controller 111. The supply to the plasma processing chamber 10 may be delayed, deteriorating the rise response of the etching process. As described above, the supply flow rate of the argon gas supplied into the plasma processing chamber 10 is set to be larger than the supply flow rate of the CF-based gas supplied from the gas source 100a and the supply flow rate of oxygen gas supplied from the gas source 100b. Therefore, since the internal pressure of the secondary side supply pipe 140 which is the opening target of the secondary side valve 141 increases, there is a particular concern about the deterioration of the responsiveness to an increase.

因而，於本發明揭露的技術之電漿處理中，為了抑制此一上升回應性的惡化，亦可在對於電漿處理腔室10的CF系氣體等之供給前，往流量控制器111充填氣體，使內部供給管112升壓（下稱「預充填程序」）。 以下，參考圖式，針對包含此預充填程序的第2實施形態之晶圓處理方法予以說明。另，下述說明中，對於與上述實施形態實質上相同之動作（步驟），省略詳細的說明。 Therefore, in the plasma processing of the technology disclosed in the present invention, in order to suppress the deterioration of the rising responsiveness, it is also possible to fill the flow controller 111 with gas before supplying the CF-based gas and the like to the plasma processing chamber 10 , to boost the internal supply pipe 112 (hereinafter referred to as "pre-filling procedure"). Hereinafter, the wafer processing method of the second embodiment including this prefill process will be described with reference to the drawings. In addition, in the following description, a detailed description of operations (steps) that are substantially the same as those in the above-mentioned embodiment will be omitted.

圖15係一實施形態之基板處理的時序圖。此外，圖16係顯示晶圓處理之主要製程中的流量控制器111之動作的說明圖。另，於圖16中，包含流量控制單元110所具備的3個流量控制器111c、111m、111e在內，將其等圖示為流量控制器111。亦即，圖16所記載的流量控制器111，包含流量控制器111c、111m、111e。 此外，與其相同，使圖16所記載之一次側閥121、一次側排氣閥132、二次側閥141及二次側排氣閥152，各自包含和氣體源100a、100b對應的一次側閥121a與121b、一次側排氣閥132a與132b、及二次側閥141a與141b。 Fig. 15 is a timing chart of substrate processing in one embodiment. In addition, FIG. 16 is an explanatory diagram showing the operation of the flow controller 111 in the main process of wafer processing. In addition, in FIG. 16, including three flow controllers 111c, 111m, and 111e with which the flow control unit 110 is equipped, these are shown as the flow controller 111. That is, the flow controller 111 shown in FIG. 16 includes flow controllers 111c, 111m, and 111e. In addition, similarly, the primary side valve 121, primary side exhaust valve 132, secondary side valve 141, and secondary side exhaust valve 152 shown in FIG. 16 each include a primary side valve corresponding to the gas sources 100a, 100b. 121a and 121b, primary side exhaust valves 132a and 132b, and secondary side valves 141a and 141b.

另，於電漿處理腔室10內之對於基板W的蝕刻處理之開始前，如圖16（a）所示，將一次側閥121、一次側排氣閥132、控制閥116、二次側閥141及二次側排氣閥152全部封閉，停止對於電漿處理腔室10之氣體供給。此外，將流量控制器111的內部抽真空。In addition, before starting the etching process on the substrate W in the plasma processing chamber 10, as shown in FIG. The valve 141 and the secondary exhaust valve 152 are all closed, and the gas supply to the plasma processing chamber 10 is stopped. In addition, the inside of the flow controller 111 is evacuated.

開始電漿處理腔室10內之對於基板W的蝕刻處理時，首先，開始Ar氣體的從另一氣體供給部160對於電漿處理腔室10之供給（圖15之步驟Sp0）。Ar氣體，作為蝕刻處理中的載氣而作用，於一連串之該蝕刻處理中，恆常地持續供給Ar氣體。 另，往電漿處理腔室10內供給的Ar氣體，亦可取代另一氣體供給部160，而與上述實施形態等同樣地從氣體源100c供給。 When the etching process on the substrate W in the plasma processing chamber 10 is started, first, the supply of Ar gas from the other gas supply unit 160 to the plasma processing chamber 10 is started (step Sp0 in FIG. 15 ). The Ar gas functions as a carrier gas in the etching process, and the Ar gas is constantly supplied in a series of the etching processes. In addition, the Ar gas supplied into the plasma processing chamber 10 may be supplied from the gas source 100c in the same manner as in the above-mentioned embodiment etc. instead of another gas supply unit 160 .

接著，如圖16（b）所示，僅將流量控制單元110a之一次側閥121a及控制閥116開放（二次側閥141a未開放），開始CF系氣體之對於流量控制單元110a的流量控制器111之充填（圖15之步驟Sp1）。在步驟Sp1，於CF系氣體的對於電漿處理腔室10之供給前，往流量控制器111充填CF系氣體，將內部供給管112升壓（第1預充填程序）。Next, as shown in FIG. 16(b), only the primary side valve 121a and the control valve 116 of the flow control unit 110a are opened (the secondary side valve 141a is not opened), and the flow control of the CF-based gas to the flow control unit 110a is started. Filling of container 111 (step Sp1 of FIG. 15). In Step Sp1 , before the CF-based gas is supplied to the plasma processing chamber 10 , the flow controller 111 is filled with the CF-based gas, and the internal supply pipe 112 is pressurized (first pre-filling process).

此處，於二次側閥141a的開放對象即二次側供給管140之內部，伴隨步驟Sp0中之Ar氣體的對於電漿處理腔室10之供給而使內部壓力上升。因此，若於內部供給管112與二次側供給管140具有內部壓力差的狀態下將二次側閥141a開放，則例如發生Ar氣體的從二次側供給管140往內部供給管112之流入等，而有CF系氣體的從流量控制器111往電漿處理腔室10之供給發生延遲，使蝕刻處理之上升回應性惡化的情形。Here, inside the secondary side supply pipe 140 to which the secondary side valve 141a is opened, the internal pressure increases with the supply of Ar gas to the plasma processing chamber 10 in step Sp0. Therefore, when the secondary side valve 141a is opened in a state where there is an internal pressure difference between the internal supply pipe 112 and the secondary side supply pipe 140, for example, the inflow of Ar gas from the secondary side supply pipe 140 to the internal supply pipe 112 occurs. etc., the supply of the CF-based gas from the flow controller 111 to the plasma processing chamber 10 may be delayed, and the rise responsiveness of the etching process may be deteriorated.

因而本實施形態中，於CF系氣體之供給前，往流量控制器111充填CF系氣體，將內部供給管112之內部壓力（更具體而言，二次側內部供給管112b之內部壓力P2）升壓。藉此，將內部供給管112與二次側供給管140之內部壓力的差減小，可抑制蝕刻處理之上升回應性的惡化。Therefore, in this embodiment, before the supply of the CF-based gas, the flow controller 111 is filled with the CF-based gas, and the internal pressure of the internal supply pipe 112 (more specifically, the internal pressure P2 of the secondary-side internal supply pipe 112b) Boost. Thereby, the difference in the internal pressure of the internal supply pipe 112 and the secondary side supply pipe 140 is reduced, and deterioration of the rise responsiveness of an etching process can be suppressed.

另，內部供給管112之內部壓力，宜上升至與二次側供給管140之內部壓力略一致的程度。具體而言，宜升壓至成為二次側供給管140之內部壓力的80～120%程度之內部壓力。 內部供給管112之內部壓力，相較於二次側供給管140之內部壓力未滿80%的情況，如同上述地有蝕刻處理之上升回應性惡化的疑慮。 此外，內部供給管112之內部壓力，相較於二次側供給管140之內部壓力超過120%的情況，有CF系氣體從內部供給管112往電漿處理腔室10迅速地流入而成為上述尖波S發生之原因的疑慮。 In addition, the internal pressure of the internal supply pipe 112 is preferably raised to a level that is substantially equal to the internal pressure of the secondary side supply pipe 140 . Specifically, it is preferable to increase the pressure to an internal pressure that becomes about 80% to 120% of the internal pressure of the secondary side supply pipe 140 . When the internal pressure of the internal supply pipe 112 is less than 80% of the internal pressure of the secondary side supply pipe 140 , there is a possibility that the increase responsiveness of the etching process may deteriorate as described above. In addition, when the internal pressure of the internal supply pipe 112 exceeds 120% of the internal pressure of the secondary side supply pipe 140, the CF-based gas flows rapidly from the internal supply pipe 112 into the plasma processing chamber 10 to become the above-mentioned Doubts about the cause of the sharp wave S.

另，CF系氣體的對於流量控制器111之充填，宜以至少較後述沉積步驟（步驟Sp2）中的CF系氣體之供給流量更小的流量施行。更具體而言，如圖15所示，宜將CF系氣體的對於流量控制器111之充填時的控制閥116之開度，控制為較沉積步驟（步驟Sp2）中的控制閥116之開度更小。In addition, the filling of the flow controller 111 with the CF-based gas is preferably performed at a flow rate that is at least lower than the supply flow rate of the CF-based gas in the deposition step (step Sp2 ) described later. More specifically, as shown in FIG. 15 , it is preferable to control the opening of the control valve 116 at the time of filling the flow controller 111 with the CF-based gas to be higher than the opening of the control valve 116 in the deposition step (step Sp2). smaller.

若內部供給管112之內部升壓至期望的壓力，則接著如圖16（c）所示，將二次側閥141a開放，開始往電漿處理腔室10內供給CF系氣體，亦即開始上述沉積步驟（圖15之步驟Sp2）。When the internal supply pipe 112 is pressurized to a desired pressure, then, as shown in FIG. The above deposition step (step Sp2 of FIG. 15 ).

若於基板W上形成CF系沉積物，則接著如圖16（d）所示，將流量控制單元110a之一次側閥121a、控制閥116及二次側閥141a關閉，停止CF系氣體的往電漿處理腔室10內之供給（圖15之步驟Sp3）。If CF-based deposits are formed on the substrate W, then, as shown in FIG. Supply in the plasma processing chamber 10 (step Sp3 of FIG. 15 ).

接著，如圖16（e）所示，將流量控制單元110a之一次側排氣閥132a及二次側排氣閥152a開放，將施行過CF系氣體之供給的流量控制單元110a（流量控制器111）之內部排氣（第1排氣步驟：圖15之步驟Sp4）。Next, as shown in FIG. 16( e ), the primary-side exhaust valve 132a and the secondary-side exhaust valve 152a of the flow control unit 110a are opened, and the flow control unit 110a (flow controller) that has been supplied with CF-based gas is opened. 111) for internal exhaust (the first exhaust step: step Sp4 in FIG. 15 ).

接著，如圖16（f）所示，將一次側排氣閥132a及二次側排氣閥152a關閉，停止流量控制單元110a之排氣（圖15之步驟Sp5）。 另，亦可於第1排氣步驟（步驟Sp4）的結束後，藉由將流量控制器111之控制閥116及流量控制單元110a之二次側閥141a開放，而確認流量控制器111內的殘留氣體已適當地排氣。 Next, as shown in FIG. 16( f ), the primary side exhaust valve 132 a and the secondary side exhaust valve 152 a are closed to stop the exhaust of the flow control unit 110 a (step Sp5 in FIG. 15 ). In addition, after the completion of the first exhaust step (step Sp4), by opening the control valve 116 of the flow controller 111 and the secondary side valve 141a of the flow control unit 110a, the flow rate in the flow controller 111 can be confirmed. Residual gases are properly vented.

此外，上述說明中，將控制閥116於步驟Sp3中關閉（參考圖15及圖16）。然而，控制閥116之關閉的時序並未限定於此一形態，從將上述第1實施形態所示的流量控制器111之內部適當地排氣的觀點來看，宜於第1排氣步驟（步驟Sp4）後將控制閥116關閉。In addition, in the above description, the control valve 116 is closed in step Sp3 (refer FIG.15 and FIG.16). However, the timing of closing the control valve 116 is not limited to this form, and it is suitable for the first exhaust step ( After step Sp4), the control valve 116 is closed.

接著，將流量控制單元110b之一次側閥121b及控制閥116開放（參考圖16（b）），開始O 2氣體之對於流量控制單元110b的流量控制器111之充填（圖15之步驟Sp6）。在步驟Sp6，於O 2氣體的對於電漿處理腔室10之供給前，往流量控制器111充填O 2氣體，將內部供給管112升壓（第2預充填程序）。 Next, the primary side valve 121b and the control valve 116 of the flow control unit 110b are opened (refer to FIG. 16(b)), and the filling of O gas to the flow controller 111 of the flow control unit 110b is started (step Sp6 of FIG. 15 ). . In Step Sp6 , before the O 2 gas is supplied to the plasma processing chamber 10 , the flow controller 111 is filled with O 2 gas, and the internal supply pipe 112 is pressurized (second pre-filling process).

另，內部供給管112之內部壓力（更具體而言，二次側內部供給管112b之內部壓力P2），宜上升至與二次側供給管140之內部壓力略一致的程度。具體而言，宜升壓至成為二次側供給管140之內部壓力的80～120%程度之內部壓力。 內部供給管112之內部壓力，相較於二次側供給管140之內部壓力未滿80%的情況，如同上述地有蝕刻處理之上升回應性惡化的疑慮。 此外，內部供給管112之內部壓力，相較於二次側供給管140之內部壓力超過120%的情況，有O 2氣體從內部供給管112往電漿處理腔室10迅速地流入而成為上述尖波S發生之原因的疑慮。 In addition, the internal pressure of the internal supply pipe 112 (more specifically, the internal pressure P2 of the secondary internal supply pipe 112 b ) should be raised to a level substantially equal to the internal pressure of the secondary internal supply pipe 140 . Specifically, it is preferable to increase the pressure to an internal pressure that becomes about 80% to 120% of the internal pressure of the secondary side supply pipe 140 . When the internal pressure of the internal supply pipe 112 is less than 80% of the internal pressure of the secondary side supply pipe 140 , there is a possibility that the increase responsiveness of the etching process may deteriorate as described above. In addition, when the internal pressure of the internal supply pipe 112 exceeds 120% of the internal pressure of the secondary side supply pipe 140, O2 gas flows rapidly from the internal supply pipe 112 into the plasma processing chamber 10 to become the above-mentioned Doubts about the cause of the sharp wave S.

另，O 2氣體的對於流量控制器111之充填，宜以至少較後述蝕刻步驟（步驟Sp7）中的O 2氣體之供給流量更小的流量施行。更具體而言，如圖15所示，宜將O 2氣體的對於流量控制器111之充填時的控制閥116之開度，控制為較蝕刻步驟（步驟Sp7）中的控制閥116之開度更小。 In addition, filling of the flow rate controller 111 with O 2 gas is preferably performed at least at a flow rate lower than the supply flow rate of O 2 gas in the etching step (step Sp7 ) described later. More specifically, as shown in FIG. 15 , it is preferable to control the opening of the control valve 116 at the time of filling the flow controller 111 with O gas to be lower than the opening of the control valve 116 in the etching step (step Sp7). smaller.

若內部供給管112之內部升壓至期望的壓力，則接著將二次側閥141b開放（參考圖16（c）），開始O 2氣體的往電漿處理腔室10內之供給。此外，與此同時，開始射頻訊號（射頻電力）之從射頻電源31往基板支持部11的下部電極及／或上部電極之供給，開始上述蝕刻步驟（圖15之步驟Sp7）。 When the internal supply pipe 112 is pressurized to a desired pressure, the secondary side valve 141b is then opened (see FIG. 16( c )), and the supply of O 2 gas into the plasma processing chamber 10 is started. In addition, at the same time, the supply of radio frequency signal (radio frequency power) from the radio frequency power supply 31 to the lower electrode and/or the upper electrode of the substrate support part 11 is started, and the above-mentioned etching step is started (step Sp7 of FIG. 15 ).

另，在圖15所示的時序圖，將O 2氣體的往電漿處理腔室10內之供給（二次側閥141a之開放）與來自射頻電源31的射頻訊號（射頻電力）之供給略同時地施行。然而，從將二次側閥141a開放起，至O 2氣體實際到達電漿處理腔室10內需要時間。鑑於此點，宜將射頻訊號（射頻電力）之供給，從二次側閥141a之開放後使時序錯開地施行。 In addition, in the timing chart shown in FIG. 15 , the supply of O2 gas into the plasma processing chamber 10 (opening of the secondary side valve 141a) and the supply of the radio frequency signal (radio frequency power) from the radio frequency power supply 31 are omitted. carried out simultaneously. However, it takes time until the O 2 gas actually reaches the plasma processing chamber 10 after the secondary side valve 141 a is opened. In view of this point, it is preferable to stagger the timing of the supply of the radio frequency signal (radio frequency power) after the opening of the secondary side valve 141a.

若基板W的蝕刻完成，則接著，將流量控制單元110b之一次側閥121b、控制閥116及二次側閥141b關閉，停止O 2氣體的往電漿處理腔室10內之供給（參考圖15之步驟Sp8：圖16（d））。 If the etching of the substrate W is completed, then , the primary side valve 121b, the control valve 116 and the secondary side valve 141b of the flow control unit 110b are closed, and the supply of O gas to the plasma processing chamber 10 is stopped (refer to FIG. Step Sp8 of 15: Fig. 16(d)).

接著，如圖16（e）所示，將流量控制單元110b之一次側排氣閥132b及二次側排氣閥152b開放，將施行過O 2氣體之供給的流量控制單元110b（流量控制器111）之內部排氣（第2排氣步驟：圖15之步驟Sp9）。 Next, as shown in Fig. 16(e), the primary side exhaust valve 132b and the secondary side exhaust valve 152b of the flow control unit 110b are opened, and the flow control unit 110b (flow controller) that has been supplied with O2 gas is opened. 111) internal exhaust (second exhaust step: step Sp9 in FIG. 15 ).

接著，如圖16（f）所示，將流量控制單元110b之一次側排氣閥132b及二次側排氣閥152b關閉，停止流量控制單元110b之排氣（圖15之步驟Sp10）。 另，亦可於第2排氣步驟（步驟Sp9）的結束後，藉由將流量控制器111之控制閥116及流量控制單元110b之二次側閥141b開放，而確認流量控制器111內之殘留氣體已適當地排氣。 Next, as shown in FIG. 16(f), the primary side exhaust valve 132b and the secondary side exhaust valve 152b of the flow control unit 110b are closed to stop the exhaust of the flow control unit 110b (step Sp10 of FIG. 15 ). In addition, after the completion of the second exhaust step (step Sp9), by opening the control valve 116 of the flow controller 111 and the secondary side valve 141b of the flow control unit 110b, the flow rate in the flow controller 111 can be confirmed. Residual gases are properly vented.

此外，上述說明中，將控制閥116於步驟Sp8中關閉（參考圖15及圖16）。然而，控制閥116之關閉的時序並未限定於此一形態，從將上述第1實施形態所示的流量控制器111之內部適當地排氣的觀點來看，宜於第2排氣步驟（步驟Sp9）後將控制閥116關閉。In addition, in the above description, the control valve 116 is closed in step Sp8 (refer FIG.15 and FIG.16). However, the timing of closing the control valve 116 is not limited to this form, and it is suitable for the second exhaust step ( After step Sp9), the control valve 116 is closed.

本實施形態中，將包含上述之沉積程序（第1程序：步驟Sp1～步驟Sp5）與蝕刻程序（第2程序：步驟Sp6～步驟Sp10）的循環，對基板W重複實行，直至獲得期望的蝕刻量為止。In this embodiment, the cycle including the above-mentioned deposition procedure (first procedure: step Sp1 to step Sp5) and etching procedure (second procedure: step Sp6 to step Sp10) is repeated on the substrate W until desired etching is obtained. up to the amount.

而後，若重複施行期望次數之循環，則判定是否需要進一步的蝕刻處理之程序（沉積程序及蝕刻程序）的循環，判定為需要的情況，如圖15所示地返回步驟Sp1，重複第1程序與第2程序之處理。此外，判定為不需要進一步的蝕刻處理之程序循環的情況，結束一連串之蝕刻處理。Then, if the desired number of cycles is repeated, it is determined whether a further cycle of the etching process (deposition process and etching process) is required, and if it is determined that it is necessary, return to step Sp1 as shown in FIG. 15 and repeat the first process. Processing with the second procedure. In addition, when it is determined that the program cycle of further etching processing is unnecessary, a series of etching processing is ended.

另，在上述實施形態，於一個循環中依序施行第1預充填程序（步驟Sp1）、沉積步驟（步驟Sp2）、第1排氣步驟（步驟Sp4）、第2預充填程序（步驟Sp6）、蝕刻步驟（步驟Sp7）及第2排氣步驟（步驟Sp9），但蝕刻處理的方法並未限定於此一形態。In addition, in the above embodiment, the first prefilling process (step Sp1), the deposition step (step Sp2), the first degassing step (step Sp4), and the second prefilling process (step Sp6) are sequentially performed in one cycle. , an etching step (step Sp7 ), and a second evacuation step (step Sp9 ), but the method of etching treatment is not limited to this form.

例如亦可如圖17所示，將第2排氣步驟（流量控制單元110b之內部排氣），於沉積步驟（來自流量控制單元110a的CF系氣體之供給）時施行。同樣地，亦可將第1排氣步驟（流量控制單元110a之內部排氣），於蝕刻步驟（來自流量控制單元110b的O 2氣體之供給）時施行。 如此地，藉由在以一個流量控制單元110施行氣體之供給時，同時進行並未施行氣體供給的另一流量控制單元110之排氣步驟，而可改善蝕刻處理的處理量。 For example, as shown in FIG. 17 , the second evacuation step (exhaust inside the flow control unit 110 b ) may be performed during the deposition step (supply of CF-based gas from the flow control unit 110 a ). Similarly, the first exhaust step (exhaust inside the flow control unit 110a) may be performed during the etching step (supply of O 2 gas from the flow control unit 110b). In this way, when the gas supply is performed by one flow control unit 110, the exhaust step of the other flow control unit 110 that is not supplied with gas is performed simultaneously, so that the throughput of the etching process can be improved.

此外，在上述實施形態，於一個流量控制單元110中的對於電漿處理腔室10之氣體供給停止之間（第1程序或第2程序之間），依序施行該一個流量控制單元110之排氣（第1排氣步驟或第2排氣步驟）、及氣體之充填（預充填程序），但此等排氣步驟與預充填程序，可適宜省略。 具體而言，如圖18所示，例如在對一個流量控制單元110僅供給一種氣體（具有單系統的構造）之情況，亦可於第1程序或第2程序的完成後，依流量控制單元110之內部壓力而將排氣步驟省略，立即施行預充填程序。更具體而言，例如使流量控制單元110之內部壓力與二次側供給管140之內部壓力略一致，判斷為於下一個程序開始時可適當地開始氣體之供給的情況，亦可將排氣步驟省略。 此外，例如如圖18所示，例如在從另一氣體供給部160供給的Ar氣體之流量小、二次側供給管140之內部壓力低的情況，亦可於排氣程序之完成後，將預充填程序省略，開始處理程序。 In addition, in the above-mentioned embodiment, when the gas supply to the plasma processing chamber 10 in one flow control unit 110 is stopped (between the first process and the second process), the flow control unit 110 is sequentially executed. Exhaust (first exhaust step or second exhaust step), and gas filling (pre-filling procedure), but these exhaust steps and pre-filling procedures can be omitted as appropriate. Specifically, as shown in FIG. 18 , for example, in the case of supplying only one type of gas to one flow control unit 110 (with a single-system structure), it is also possible to control the unit according to the flow rate after the completion of the first procedure or the second procedure. The internal pressure of 110 omits the exhaust step, and immediately implements the pre-filling procedure. More specifically, for example, if the internal pressure of the flow control unit 110 is made to be approximately equal to the internal pressure of the secondary side supply pipe 140, and it is judged that the supply of gas can be properly started at the start of the next program, the exhaust gas may be exhausted. Step omitted. In addition, as shown in FIG. 18, for example, when the flow rate of the Ar gas supplied from the other gas supply part 160 is small and the internal pressure of the secondary side supply pipe 140 is low, after the exhaust process is completed, the The prefill procedure is omitted and the processing procedure begins.

此外，上述實施形態中，如圖4～圖7所示地構成為可從流量控制單元110之上游側與下游側分別將流量控制單元110內抽真空，但本實施形態（第2實施形態）中，至少於流量控制單元110之下游側連接排氣單元（圖示的例子中為排氣單元151）即可。換而言之，尤其依本實施形態（第2實施形態），則本發明揭露的技術之流量控制單元110，亦可如圖19所示，並未具備一次側排氣管130、排氣單元131及一次側排氣閥132。In addition, in the above-mentioned embodiment, as shown in FIGS. Among them, an exhaust unit (exhaust unit 151 in the illustrated example) may be connected at least downstream of the flow rate control unit 110 . In other words, especially according to the present embodiment (second embodiment), the flow control unit 110 of the technology disclosed in the present invention may also be shown in FIG. 131 and primary exhaust valve 132.

＜第2實施形態之晶圓處理的效果等＞ 以上，依第2實施形態之電漿處理裝置1，則在對於電漿處理腔室10之氣體供給前，往流量控制器111充填氣體，將內部供給管112升壓（預充填程序）。預充填程序後的內部供給管112之內部壓力（更具體而言，二次側內部供給管112b之內部壓力P2），作為一例，為與二次側供給管140之內部壓力略一致的壓力，宜為二次側供給管140之內部壓力的80～120%程度之壓力。 藉此，將內部供給管112與二次側供給管140之內部壓力的差減小，可抑制二次側閥141之開放時的氬氣之流入、尖波S之發生，抑制蝕刻處理之上升回應性的惡化。 <Effects of wafer processing in the second embodiment, etc.> As above, according to the plasma processing apparatus 1 of the second embodiment, before the gas is supplied to the plasma processing chamber 10, the flow controller 111 is filled with gas, and the internal supply pipe 112 is pressurized (pre-filling process). The internal pressure of the internal supply pipe 112 (more specifically, the internal pressure P2 of the secondary-side internal supply pipe 112 b ) after the pre-filling process is, for example, a pressure approximately equal to the internal pressure of the secondary-side supply pipe 140 , The pressure is preferably about 80 to 120% of the internal pressure of the secondary side supply pipe 140 . Thereby, the difference in internal pressure between the internal supply pipe 112 and the secondary side supply pipe 140 is reduced, the inflow of argon gas and the generation of the sharp wave S when the secondary side valve 141 is opened can be suppressed, and the increase of the etching process can be suppressed. Deterioration of responsiveness.

圖20係顯示關於本實施形態之處理方法中的電漿處理之氣體回應性的檢討結果之圖表。 圖式中，分別使實線顯示將O 2氣體以0.9sccm施行0.5秒之預充填的情況（實施例1），使虛線顯示將O 2氣體以0.9sccm施行0.2秒之預充填的情況（實施例2），使一點鏈線顯示未施行預充填的情況（比較例）之結果。 另，本檢討中，於實施例1、2及比較例之任一者的情況中，皆從另一氣體供給部160以950sccm持續Ar氣體之供給。 FIG. 20 is a graph showing the examination results of the gas responsiveness of the plasma treatment in the treatment method of this embodiment. In the figure, the solid line shows the case of prefilling O2 gas at 0.9 sccm for 0.5 seconds (Example 1), and the dotted line shows the case of prefilling O2 gas at 0.9 sccm for 0.2 seconds (Example 1). Example 2) The one-dot chain line shows the result of the case where prefilling is not performed (comparative example). In addition, in this review, in any case of Examples 1, 2, and Comparative Example, the supply of Ar gas was continued at 950 sccm from another gas supply unit 160 .

如圖20所示，得知藉由在對於電漿處理腔室10之氣體供給前，往流量控制器111充填氣體，而可改善上升回應性（亦即，得知可將圖20所示之圖形的斜率增大）。 此外，得知此時若施行預充填程序之時間越長，則越可改善上升回應性（亦即，得知可將圖20所示之圖形的斜率增大）。發明人認為此係因在以一定流量施行氣體之供給的情況，若施行預充填程序之時間越長，則內部供給管112與二次側供給管140之內部壓力的差變小之緣故。 As shown in FIG. 20, it is known that by filling the flow controller 111 with gas before the gas supply to the plasma processing chamber 10, the rising responsiveness can be improved (that is, it is known that the flow controller 111 shown in FIG. The slope of the graph increases). In addition, it is known that the longer the pre-filling process is performed at this time, the more the rising response can be improved (that is, it is known that the slope of the graph shown in FIG. 20 can be increased). The inventor thinks that this is because when the gas is supplied at a constant flow rate, the longer the pre-filling process is, the smaller the difference in internal pressure between the internal supply pipe 112 and the secondary supply pipe 140 becomes.

本實施形態之預充填程序中，宜以使內部供給管112之內部壓力與二次側供給管140之內部壓力略一致（成為二次側供給管140之內部壓力的80～120%程度）的方式，決定預充填程序之時間。In the pre-filling process of this embodiment, it is preferable to make the internal pressure of the internal supply pipe 112 approximately equal to the internal pressure of the secondary supply pipe 140 (approximately 80 to 120% of the internal pressure of the secondary supply pipe 140). The method determines the time of the pre-filling procedure.

另，在上述實施形態，於預充填程序中使內部供給管112之內部升壓至期望的壓力後，將二次側閥141開放，開始各種處理程序開始，但處理程序之開始條件（二次側閥141之開放條件），並未限定於內部供給管112之內部壓力。In addition, in the above-mentioned embodiment, after the inside of the internal supply pipe 112 is boosted to a desired pressure in the prefilling process, the secondary side valve 141 is opened to start various processing programs, but the starting condition of the processing program (secondary The opening condition of the side valve 141) is not limited to the internal pressure of the internal supply pipe 112.

例如，上述實施形態中，藉由量測內部供給管112之內部壓力而決定二次側閥141之開放時序，但亦可與其相反，預先決定二次側閥141之開放時序，與其配合而調整內部供給管112之內部壓力。 此一情況，二次側閥141之開放時序，作為一例，可將步驟Sp0中之來自另一氣體供給部160的Ar氣體之供給開始的時序作為基準而決定。 For example, in the above-mentioned embodiment, the opening timing of the secondary side valve 141 is determined by measuring the internal pressure of the internal supply pipe 112, but it can also be reversed, and the opening timing of the secondary side valve 141 can be determined in advance and adjusted accordingly. The internal pressure of the internal supply pipe 112. In this case, the opening timing of the secondary side valve 141 can be determined based on, for example, the timing of starting the supply of Ar gas from the other gas supply unit 160 in step Sp0.

此外，於各種處理程序前之預充填程序中，適宜調整控制閥116之開度，俾在如此地決定的二次側閥141之開放時序使內部供給管112之內部壓力成為期望的值。 亦即，例如預測為在二次側閥141之開放時序，內部供給管112之內部壓力成為較期望的值更大之情況，控制將控制閥116之開度減小。此外，例如預測為在二次側閥141之開放時序，內部供給管112之內部壓力成為較期望的值更小之情況，控制將控制閥116之開度增大。 In addition, in the prefilling process before various processing processes, the opening degree of the control valve 116 is appropriately adjusted so that the internal pressure of the internal supply pipe 112 becomes a desired value at the opening timing of the secondary side valve 141 thus determined. That is, for example, when it is predicted that the internal pressure of the internal supply pipe 112 will become higher than the expected value at the opening timing of the secondary side valve 141, the opening degree of the control valve 116 is controlled to decrease. In addition, for example, when it is predicted that the internal pressure of the internal supply pipe 112 becomes lower than a desired value at the opening timing of the secondary side valve 141, the opening degree of the control valve 116 is controlled to increase.

另，在上述實施形態，雖依據施行過預充填程序的內部供給管112之內部壓力而決定二次側閥141之開放時序，但亦可取代內部供給管112之內部壓力，或在該內部壓力之外更設定其他參數作為條件。 具體而言，例如亦可取代內部供給管112之內部壓力，或在該內部壓力之外，進一步將從流量控制器111供給的氣體之流量、氣體之供給時間、流量控制器111之內部溫度、或在二次側供給管140流通的Ar氣體之流量、控制閥116的機器間之差異等作為參數而設定條件。 In addition, in the above-mentioned embodiment, although the opening sequence of the secondary side valve 141 is determined according to the internal pressure of the internal supply pipe 112 that has undergone the pre-filling process, it can also be replaced by the internal pressure of the internal supply pipe 112, or the internal pressure In addition, other parameters are set as conditions. Specifically, for example, instead of the internal pressure of the internal supply pipe 112, or in addition to the internal pressure, the flow rate of the gas supplied from the flow controller 111, the supply time of the gas, the internal temperature of the flow controller 111, Alternatively, the flow rate of Ar gas flowing through the secondary side supply pipe 140 , the difference between devices that control the valve 116 , and the like are used as parameters to set the conditions.

此外，亦可將此等從流量控制器111供給的氣體之流量、流量控制器111之內部溫度、或在二次側供給管140流通的Ar氣體之流量等作為參數，在調整二次側閥141之開放時序以外，進一步調整控制閥116之開度。In addition, the flow rate of the gas supplied from the flow controller 111, the internal temperature of the flow controller 111, the flow rate of the Ar gas flowing through the secondary side supply pipe 140, etc. can also be used as parameters to adjust the secondary side valve. In addition to the opening sequence of 141, the opening degree of the control valve 116 is further adjusted.

另，如同上述地施行之預充填程序，可於以下之Phase所示的各種態樣中應用。In addition, the prefilling procedure performed as above can be applied to various aspects shown in the following Phase.

・Phase1 可限定於在電漿處理之開始前預先決定的模式配方，實行上述預充填程序。具體而言，如同上述地決定預先預充填的氣體之供給流量、供給時間等的條件，可按照決定的條件（例如氣體供給流量）而實行預充填程序。 若依Phase1，則藉由預先設定改善上升回應性且不發生尖波的條件，施行預充填程序，而可適當地施行對於基板W之電漿處理。 ・Phase1 The pre-fill procedure described above can be performed limited to a pattern recipe that is predetermined before the start of the plasma treatment. Specifically, the conditions such as the supply flow rate and the supply time of the pre-charged gas are determined as described above, and the pre-charge process can be executed according to the determined conditions (for example, the gas supply flow rate). According to Phase 1, the pre-filling process can be performed by pre-setting the conditions to improve the rising response and avoid sharp waves, so that the plasma treatment on the substrate W can be properly performed.

・Phase2 藉由從作為載氣的Ar氣體之流量、噴淋頭13之溫度、或往噴淋頭13之各氣體供給口14c、14m、14e供給的氣體之流量比等計算，或以壓力感測器115測定內部壓力P2，而能夠以適當的條件（例如氣體供給流量、充填量）自動實行上述預充填程序。 若依Phase2，則依據各種測定結果、計算結果而適宜控制預充填程序。藉此，可追蹤流量控制器111、電漿處理腔室10的內部狀態而適宜變更預充填程序，故相較於phase1，可獲得更適當的電漿處理結果。 ・Phase 2 Calculated from the flow rate of Ar gas as a carrier gas, the temperature of the shower head 13, or the flow rate ratio of the gas supplied to the gas supply ports 14c, 14m, and 14e of the shower head 13, or by using a pressure sensor 115 measures the internal pressure P2, and the above-mentioned pre-filling procedure can be automatically carried out under appropriate conditions (such as gas supply flow rate, filling amount). According to Phase 2, the pre-filling procedure is appropriately controlled according to various measurement results and calculation results. Thereby, the internal state of the flow controller 111 and the plasma processing chamber 10 can be tracked and the pre-filling program can be changed appropriately, so compared with phase 1, a more appropriate plasma processing result can be obtained.

・Phase3 可使用具備控制內部供給管112之內部壓力（更具體而言，二次側內部供給管112b之內部壓力P2）的機構之流量控制單元110、或流量控制器111，實行上述預充填程序。 依Phase3，則有在將閥開啟前為止，無須嚴格地控制充填量之優點。此外，藉由內部壓力控制機構可使控制統一，故可緩和因流量控制單元110、或流量控制器111之個體差別所造成的影響，或因控制之再現差異所造成的影響。 ・Phase3 The above-mentioned prefilling process can be performed using the flow control unit 110 or the flow controller 111 equipped with a mechanism for controlling the internal pressure of the internal supply pipe 112 (more specifically, the internal pressure P2 of the secondary-side internal supply pipe 112b). According to Phase 3, there is no need to strictly control the filling amount until the valve is opened. In addition, the control can be unified by the internal pressure control mechanism, so the influence caused by the individual difference of the flow control unit 110 or the flow controller 111 or the influence caused by the reproduction difference of the control can be alleviated.

＜與本發明所揭露之技術相關的其他效果等＞ 此處，本發明所揭露之技術的電漿處理裝置1中，如同上述，對基板W重複交互地實行包含第1程序及第2程序的循環。因此，於各流量控制器111中，重複實行氣體的往電漿處理腔室10之供給與停止（以排氣單元151進行之排氣）。 <Other effects related to the technology disclosed in the present invention, etc.> Here, in the plasma processing apparatus 1 of the technology disclosed in the present invention, as described above, the cycle including the first process and the second process is repeatedly and alternately executed on the substrate W. Therefore, in each flow controller 111 , supply and stop of gas to the plasma processing chamber 10 (exhaust by the exhaust unit 151 ) are repeatedly performed.

此時，於並未在孔口113之下游側連接排氣管線（二次側排氣管150及排氣單元151）的習知電漿處理裝置中，必須每次停止（每次將一次側閥121關閉）來自氣體源100之氣體供給，俾使流量控制器111之內部壓力上升而不發生尖波S。換而言之，在重複實行的每個循環，必須實行以流量控制器111進行之氣體流量的控制，在氣體的往電漿處理腔室10之供給與停止的切換上需要時間。At this time, in the conventional plasma processing device that is not connected to the exhaust pipeline (secondary side exhaust pipe 150 and exhaust unit 151) at the downstream side of the orifice 113, it must be stopped every time (the primary side The valve 121 is closed) the gas supply from the gas source 100, so that the internal pressure of the flow controller 111 rises without a spike S. In other words, it is necessary to control the flow rate of the gas by the flow controller 111 for each repeated cycle, and it takes time to switch between supplying and stopping the gas to the plasma processing chamber 10 .

關於此點，若依本實施形態之電漿處理裝置1，則在孔口113之下游側連接排氣管線（二次側排氣管150及排氣單元151）。因此，在停止往電漿處理腔室10之氣體供給時，將二次側排氣閥152開放，以一定的流量（往電漿處理腔室10之供給流量）持續排氣即可，無須停止來自氣體源100之氣體供給（將一次側閥121關閉）。換而言之，藉由僅將二次側閥141與二次側排氣閥152之開閉分別重複，而可切換氣體的往電漿處理腔室10之供給與停止，此時，無須夾設以流量控制器111進行的氣體流量之控制。 亦即，可將習知方法中在重複實行的每個循環實行之以流量控制器111進行的氣體流量之控制省略，可瞬時地以期望之一定流量重新開始氣體的往電漿處理腔室10之供給。 Regarding this point, according to the plasma processing apparatus 1 of this embodiment, the exhaust line (the secondary-side exhaust pipe 150 and the exhaust unit 151 ) is connected to the downstream side of the orifice 113 . Therefore, when the gas supply to the plasma processing chamber 10 is stopped, the secondary side exhaust valve 152 is opened, and the exhaust gas can be continued at a certain flow rate (supply flow rate to the plasma processing chamber 10), without stopping. Gas supply from gas source 100 (primary side valve 121 is closed). In other words, only by repeating the opening and closing of the secondary side valve 141 and the secondary side exhaust valve 152 respectively, the supply and stop of the gas to the plasma processing chamber 10 can be switched. Gas flow control by flow controller 111. That is to say, the control of the gas flow rate by the flow controller 111 in each cycle of the conventional method can be omitted, and the flow of gas to the plasma processing chamber 10 can be restarted instantaneously at a desired constant flow rate. supply.

另，上述實施形態中，雖於氣體供給部20，將用於控制氣體流量之作為控制側孔口的孔口113僅配置於流量控制器111之內部，但亦可將用於控制氣體流量之其他孔口進一步設置於氣體供給流路。In addition, in the above-mentioned embodiment, although the orifice 113 as the control-side orifice for controlling the gas flow rate is only arranged inside the flow controller 111 in the gas supply part 20, it may also be used to control the gas flow rate. Other orifices are further provided in the gas supply flow path.

此處，設置於氣體供給流路的孔口之孔徑具有最小加工極限，因此，原則上，氣體無法以該最小加工極限之孔徑可控制的流量以下之極小流量在氣體供給流路流通。 然而，本案發明人等進行檢討後，發現藉由如圖21所示地在二次側供給管140中的和二次側排氣管150的連接部與二次側閥141之間、及二次側排氣管150中的二次側排氣閥152之上游側，分別設置作為腔室側孔口的孔口180、作為排氣側孔口的孔口181，而有能夠以極小流量供給氣體的可能性。 Here, the hole diameter of the orifice provided in the gas supply flow path has a minimum processing limit, so in principle, the gas cannot flow through the gas supply flow path at a very small flow rate below the flow rate that can be controlled by the hole diameter of the minimum processing limit. However, after examination by the inventors of the present application, it was found that by connecting the secondary side supply pipe 140 with the secondary side exhaust pipe 150 and the secondary side valve 141 as shown in FIG. On the upstream side of the secondary-side exhaust valve 152 in the secondary-side exhaust pipe 150, an orifice 180 as a chamber-side orifice and an orifice 181 as an exhaust-side orifice are respectively provided, so that a very small flow rate can be supplied. Possibility of gas.

具體而言，將配置於流量控制器111之內部的孔口113之孔徑以最小加工極限構成，並將設置於該孔口113之下游側的孔口180、181分別以不同之孔徑構成。Specifically, the diameter of the orifice 113 arranged inside the flow controller 111 is configured at the minimum processing limit, and the orifices 180 and 181 provided on the downstream side of the orifice 113 are respectively configured with different diameters.

藉此，將由氣體源100供給至流量控制器111的氣體，首先，藉由孔口113以最小加工極限之孔徑可控制的最小流量往二次側供給管140導入。導入至二次側供給管140的氣體，在與二次側排氣管150之連接部中分支。此時，孔口180、181分別以不同之孔徑構成，故與此等孔徑的比率相應，往孔口180（電漿處理腔室10）側、及孔口181（排氣單元151）側分別流動的氣體之流量比率有所改變。亦即，例如孔口180、181之孔徑的比率為1：4之情況，導入至二次側供給管140之最小流量的氣體之20%往電漿處理腔室10側流動，剩餘之80%往排氣單元151側流動。In this way, the gas supplied from the gas source 100 to the flow controller 111 is firstly introduced into the secondary side supply pipe 140 through the orifice 113 at a minimum flow rate that can be controlled by the hole diameter of the minimum processing limit. The gas introduced into the secondary side supply pipe 140 is branched at the connection portion with the secondary side exhaust pipe 150 . At this time, the orifices 180 and 181 are formed with different apertures respectively, so corresponding to the ratio of these apertures, towards the orifice 180 (plasma processing chamber 10) side and the orifice 181 (exhaust unit 151) side respectively The flow ratio of the flowing gas is changed. That is, for example, when the ratio of the apertures of the orifices 180 and 181 is 1:4, 20% of the minimum flow rate of gas introduced into the secondary side supply pipe 140 flows to the plasma processing chamber 10 side, and the remaining 80% It flows toward the exhaust unit 151 side.

如此地，依本實施形態，則藉由將用於控制氣體流量之其他孔口180、181進一步設置於氣體供給流路，而可將氣體以孔口113的最小加工極限之孔徑可控制的流量以下之極小流量，往電漿處理腔室10供給。此時，依據往電漿處理腔室10供給之目標氣體流量相對於從孔口113輸出的最小流量之氣體流量的比率，而決定孔口180、181之孔徑的比率。藉此，可更精密地控制電漿處理腔室105中之對於基板W的處理。In this way, according to this embodiment, by further disposing the other orifices 180 and 181 for controlling the gas flow rate in the gas supply flow path, the gas can be controlled at a flow rate of the orifice 113 with a diameter that is the minimum processing limit. The following extremely small flow rate is supplied to the plasma processing chamber 10 . At this time, the ratio of the apertures of the orifices 180 and 181 is determined according to the ratio of the target gas flow rate supplied to the plasma processing chamber 10 to the gas flow rate of the minimum flow rate output from the orifice 113 . Accordingly, the processing of the substrate W in the plasma processing chamber 105 can be more precisely controlled.

另，在圖21所示之例子中，藉由分別設置孔徑不同的孔口180、181，而控制往電漿處理腔室10側與排氣單元151側流通的氣體之流量比率，但流量比率的控制方法並未限定於此一形態。具體而言，若二次側排氣管150、較與該二次側排氣管150之連接部更為下游側的二次側供給管140之流路的大小不同，則可控制氣體之流量比率。 例如，亦可取代設置孔口180、181，而將二次側閥141及二次側排氣閥152，分別以可調節開度的閥，例如針閥等構成。 In addition, in the example shown in FIG. 21, the flow rate ratio of the gas flowing to the plasma processing chamber 10 side and the exhaust unit 151 side is controlled by setting the orifices 180 and 181 with different pore diameters respectively, but the flow rate ratio The control method is not limited to this form. Specifically, if the flow paths of the secondary side exhaust pipe 150 and the secondary side supply pipe 140 on the downstream side of the connection with the secondary side exhaust pipe 150 are different in size, the flow rate of the gas can be controlled. ratio. For example, instead of providing the orifices 180 and 181, the secondary-side valve 141 and the secondary-side exhaust valve 152 may each be constituted by a valve whose opening can be adjusted, such as a needle valve.

另，於電漿處理裝置中，雖利用設置於流量控制器的孔口算出在氣體供給流路流通之氣體流量，但例如在雜質等附著、沉積於孔口的孔之情況，有無法適當地算出氣體流量的疑慮。因此，於電漿處理裝置中，過去實施利用孔口之降下特性的自診斷（確認算出之氣體流量的有效性）。In addition, in the plasma processing apparatus, although the orifice provided in the flow controller is used to calculate the flow rate of the gas flowing through the gas supply channel, for example, when impurities such as adhere to or deposit in the hole of the orifice, it may not be possible to properly Figure out the gas flow concerns. Therefore, in the plasma processing apparatus, self-diagnosis (confirmation of the validity of the calculated gas flow rate) using the drop characteristic of the orifice has been performed in the past.

過去，於孔口的自診斷中，藉由將一次側閥及一次側排氣閥關閉，將二次側閥開放，而將充填在流量控制器之內部的氣體從電漿處理腔室側排氣。而此時，藉由確認相對於排氣時間之流量控制器的壓力降低率，即排氣特性是否適當（例如與出貨時之狀態是否有所變化），而判定算出之氣體流量是否具有有效性（自診斷）。 但藉由此一習知方法進行自診斷的情況，由於從電漿處理腔室側施行流量控制器之排氣，故無法將該孔口之自診斷與電漿處理腔室中的基板W之處理並行實行。 In the past, in the self-diagnosis of the orifice, the gas filled in the flow controller was discharged from the side of the plasma processing chamber by closing the primary side valve and the primary side exhaust valve, and opening the secondary side valve. gas. At this time, by confirming the pressure drop rate of the flow controller relative to the exhaust time, that is, whether the exhaust characteristics are appropriate (for example, whether there is a change from the state at the time of shipment), and determine whether the calculated gas flow rate is effective. sex (self-diagnosis). However, in the case of self-diagnosis by this conventional method, since the flow controller is exhausted from the side of the plasma processing chamber, it is impossible to connect the self-diagnosis of the orifice with the substrate W in the plasma processing chamber. Processing is performed in parallel.

然而，關於此點，若依本實施形態之電漿處理裝置1，則可取代連接至電漿處理腔室10的排氣系統40，使用連接至二次側供給管140的排氣單元151施行流量控制器111之排氣。亦即，可與電漿處理腔室10中的基板W處理獨立地（與基板W之處理並行）實施孔口113之自診斷。 因此，進行孔口113之自診斷時，無須停止基板W之處理，可改善電漿處理裝置1的生產力。此外，由於如此地可與基板W之處理獨立地進行自診斷，故在電漿處理腔室10處理之單片基板W的每一處理、或圖9等顯示的基板W的處理之每一步驟等，能夠在任意時序實行自診斷，可適當地降低源自於氣體流量之算出不良的基板W之廢片數。 However, regarding this point, according to the plasma processing apparatus 1 of this embodiment, instead of the exhaust system 40 connected to the plasma processing chamber 10, the exhaust unit 151 connected to the secondary side supply pipe 140 can be used to implement Exhaust of flow controller 111. That is, self-diagnosis of the orifice 113 may be performed independently of (in parallel with) the processing of the substrate W in the plasma processing chamber 10 . Therefore, when the self-diagnosis of the orifice 113 is performed, it is not necessary to stop the processing of the substrate W, and the productivity of the plasma processing apparatus 1 can be improved. In addition, since self-diagnosis can be performed independently of the processing of the substrate W in this way, each processing of a single substrate W processed in the plasma processing chamber 10, or each step of the processing of the substrate W shown in FIG. etc., self-diagnosis can be performed at any timing, and the number of waste substrates W due to poor calculation of the gas flow rate can be appropriately reduced.

另，本實施形態之電漿處理裝置1中，與上述孔口的自診斷同樣地，可將設置在流量控制器之2個壓力感測器114、115的自診斷，與基板W之處理獨立地（與基板W之處理並行）實施。In addition, in the plasma processing apparatus 1 of the present embodiment, the self-diagnosis of the two pressure sensors 114 and 115 provided in the flow controller can be performed independently of the processing of the substrate W similarly to the self-diagnosis of the above-mentioned orifice. (in parallel with the processing of the substrate W).

具體而言，藉由將一次側閥121及一次側排氣閥132關閉，將二次側排氣閥152開放，而將充填在流量控制器111之內部的氣體由排氣單元151排氣。而此時，藉由以2個壓力感測器114、115測定流量控制器111之內部壓力，將測定結果相互比較，而可確認在此等2個壓力感測器114、115是否發生零點偏差、或跨度偏差。Specifically, by closing the primary side valve 121 and the primary side exhaust valve 132 and opening the secondary side exhaust valve 152 , the gas filled in the flow controller 111 is exhausted from the exhaust unit 151 . At this time, by measuring the internal pressure of the flow controller 111 with the two pressure sensors 114 and 115 and comparing the measurement results with each other, it is possible to confirm whether zero point deviation occurs in the two pressure sensors 114 and 115 , or span deviation.

更具體而言，藉由將在對流量控制器111的內部充填氣體之升壓時、及以排氣單元151進行之排氣時以2個壓力感測器114、115產生的測定結果相互比較，而可確認在此等2個壓力感測器114、115是否發生跨度偏差。 此外，藉由將在將流量控制器111內的氣體充分地排氣，進一步將流量控制器111之內部抽真空後，以2個壓力感測器114、115產生的測定結果相互比較，而可確認在此等2個壓力感測器114、115是否發生零點偏差。 More specifically, by comparing the measurement results generated by the two pressure sensors 114 and 115 when the gas is pressurized inside the flow controller 111 and when the gas is exhausted by the exhaust unit 151 , and it can be confirmed whether span deviation occurs in these two pressure sensors 114, 115. In addition, by fully exhausting the gas in the flow controller 111 and further evacuating the inside of the flow controller 111, the measurement results generated by the two pressure sensors 114 and 115 can be compared with each other. It is confirmed whether the zero point deviation occurs in these two pressure sensors 114, 115.

另，此等壓力感測器114、115之自診斷，亦可與前述孔口113之自診斷並行施行。亦即，例如亦可於孔口113之自診斷前，在將氣體充填至流量控制器111之內部時確認壓力感測器114、115的跨度偏差，進一步，在將充填的氣體排氣並實施孔口113之自診斷後，測定抽真空後的流量控制器111之內部壓力，確認壓力感測器114、115之零點偏差。In addition, the self-diagnosis of the pressure sensors 114 and 115 can also be performed in parallel with the self-diagnosis of the aforementioned orifice 113 . That is, for example, before the self-diagnosis of the orifice 113, the span deviation of the pressure sensors 114 and 115 can be confirmed when the gas is filled into the flow controller 111, and further, the filled gas can be exhausted and implemented. After the self-diagnosis of the orifice 113, measure the internal pressure of the flow controller 111 after vacuuming, and confirm the zero point deviation of the pressure sensors 114 and 115.

另，如圖4及圖5所示，於上述實施形態之氣體供給部20中，和各流量控制器111對應連接的二次側排氣管150，分別在二次側排氣閥152之下游側合流後，藉由排氣單元151排氣。In addition, as shown in FIG. 4 and FIG. 5 , in the gas supply unit 20 of the above-mentioned embodiment, the secondary-side exhaust pipes 150 correspondingly connected to the respective flow controllers 111 are downstream of the secondary-side exhaust valves 152 respectively. After the side merges, the exhaust is exhausted through the exhaust unit 151.

鑑於此點，在從各二次側排氣管150同時排氣的氣體含有禁止混合氣體之情況，宜控制各二次側排氣閥152之開閉，使禁止混合氣體彼此在排氣管線中不混合。更具體而言，施行若混合則危險之2種以上的氣體之排氣的情況，在個別地實施一種氣體之排氣後，宜將排氣管線以既定延遲時間（例如100msec）抽真空後，個別地施行其他氣體之排氣。In view of this point, when the gas exhausted simultaneously from each secondary side exhaust pipe 150 contains prohibited mixed gas, it is advisable to control the opening and closing of each secondary side exhaust valve 152 so that the prohibited mixed gas does not flow in the exhaust line. mix. More specifically, when exhausting two or more gases that are dangerous if mixed, after exhausting one gas individually, it is advisable to evacuate the exhaust line with a predetermined delay time (for example, 100msec). Exhaust other gases individually.

另，作為禁止混合氣體之組合，可列舉氫（H 2）氣與氧（O 2）氣之組合、溴化氫（HBr）氣體與氯（Cl 2）氣之組合、或氨（NH 3）氣與氯（Cl 2）氣之組合等。 In addition, as the combination of prohibited mixed gases, the combination of hydrogen (H 2 ) gas and oxygen (O 2 ) gas, the combination of hydrogen bromide (HBr) gas and chlorine (Cl 2 ) gas, or the combination of ammonia (NH 3 ) Combination of gas and chlorine (Cl 2 ) gas, etc.

此次揭露之實施形態，應知曉其全部的點僅為例示，而非用於限制本發明。上述實施形態，亦可於不脫離添附之發明申請專利範圍及其主旨的範疇內，以各種形態進行省略、置換、變更。It should be understood that the embodiments disclosed this time are merely examples in all points, and are not intended to limit the present invention. The above-mentioned embodiments can also be omitted, replaced, and changed in various forms within the scope of not departing from the scope of the appended patent application and its gist.

另，如同以下之構成，亦屬於本發明所揭露之技術特徵。 （1） 一種往處理腔室內供給氣體之氣體供給系統，包含：複數氣體供給流路，可對該處理腔室獨立地供給氣體；流量控制器，配置於複數該氣體供給流路中的各氣體供給流路；一次側閥，配置於該氣體供給流路中的該流量控制器之上游側；一次側氣體排氣流路，在該氣體供給流路中的該流量控制器與該一次側閥之間分支，連接至一次側排氣機構；一次側排氣閥，配置於該一次側氣體排氣流路；二次側閥，配置於該氣體供給流路中的該流量控制器之下游側；二次側氣體排氣流路，在該氣體供給流路中的該流量控制器與該二次側閥之間分支，連接至二次側排氣機構；以及二次側排氣閥，配置於該二次側氣體排氣流路； 而該流量控制器，包括：控制閥，和該一次側閥與該二次側閥相連接；以及控制側孔口，配置於該控制閥與該二次側閥之間。 （2） 如前述（1）記載之氣體供給系統，其中， 更包含：排氣側孔口，配置於該二次側氣體排氣流路中的該二次側排氣閥之上游側；以及腔室側孔口，配置於該氣體供給流路中的和該二次側氣體排氣流路的連接部與該二次側閥之間； 該控制側孔口具有最小加工極限之孔徑； 該排氣側孔口與該腔室側孔口之孔徑彼此不同。 （3） 如前述（2）記載之氣體供給系統，其中， 依據相對於從該控制側孔口輸出的氣體之流量的往該處理腔室供給的氣體之目標流量的比率，而決定該排氣側孔口與該腔室側孔口之孔徑大小的比率。 （4） 如前述（1）至前述（3）中任一項記載之氣體供給系統，其中， 複數該氣體供給流路，於該二次側閥之下游側中合流後，連接至該處理腔室。 （5） 如前述（1）至前述（4）中任一項記載之氣體供給系統，其中， 該氣體供給流路，包括對於該處理腔室的內部中之複數不同位置獨立地供給氣體的複數分支供給管；於複數該分支供給管，各自獨立地連接該流量控制器、該二次側閥、該二次側氣體排氣流路及該二次側排氣閥。 （6） 如前述（5）記載之氣體供給系統，其中， 該氣體供給流路，在和該一次側氣體排氣流路的連接部與該流量控制器之間中，分支為複數該分支供給管。 （7） 如前述（5）或該（6）記載之氣體供給系統，其中 複數該分支供給管，可對導入至該處理腔室的內部之基板的至少邊緣區域及中心區域，獨立地供給該氣體。 （8） 一種處理基板之電漿處理裝置，包含：處理腔室；基板支持體，配置於該處理腔室之內部；如該（1）至前述（7）中任一項記載之氣體供給系統，往該處理腔室之內部供給氣體；以及電漿產生部，由該處理腔室內的氣體產生電漿。 （9） 一種利用氣體供給系統之氣體供給方法， 該氣體供給系統包含：複數氣體供給流路，可對處理腔室獨立地供給氣體；流量控制器，配置於複數該氣體供給流路中的各氣體供給流路；一次側閥，配置於該氣體供給流路中的該流量控制器之上游側；一次側氣體排氣流路，在該氣體供給流路中的該流量控制器與該一次側閥之間分支，連接至一次側排氣機構；一次側排氣閥，配置於該一次側氣體排氣流路；二次側閥，配置於該氣體供給流路中的該流量控制器之下游側；二次側氣體排氣流路，在該氣體供給流路中的該流量控制器與該二次側閥之間分支，連接至二次側排氣機構；以及二次側排氣閥，配置於該二次側氣體排氣流路； 而該流量控制器包括：控制閥，和該一次側閥與該二次側閥相連接；以及控制側孔口，配置於該控制閥與該二次側閥之間； 該氣體供給方法包含如下步驟： （A）將至少1條該氣體供給流路之該一次側閥及該二次側閥開放，往該處理腔室之內部供給氣體； （B）將在該（A）步驟開放之該一次側閥及該二次側閥封閉； （C）將在該（A）步驟往該處理腔室之內部供給氣體的該至少1條該氣體供給流路之該一次側排氣閥及該二次側排氣閥開放，從該至少1條該氣體供給流路將氣體排氣；以及 （D）將在該（C）步驟開放之該一次側排氣閥及該二次側排氣閥封閉。 （10） 如前述（9）記載之氣體供給方法，其中， 更包含如下步驟：（E）將該一次側排氣閥及該二次側排氣閥封閉後，將該二次側閥開放，確認在該流量控制器之內部殘留的氣體。 （11） 如前述（9）或該（10）記載之氣體供給方法，其中， 將至少包含該（A）步驟～該（D）步驟的循環重複實行。 （12） 一種利用氣體供給系統之氣體供給方法， 該氣體供給系統包含：複數氣體供給流路，可對處理腔室獨立地供給氣體；流量控制器，配置於複數該氣體供給流路中的各氣體供給流路；一次側閥，配置於該氣體供給流路中的該流量控制器之上游側；一次側氣體排氣流路，在該氣體供給流路中的該流量控制器與該一次側閥之間分支，連接至一次側排氣機構；一次側排氣閥，配置於該一次側氣體排氣流路；二次側閥，配置於該氣體供給流路中的該流量控制器之下游側；二次側氣體排氣流路，在該氣體供給流路中的該流量控制器與該二次側閥之間分支，連接至二次側排氣機構；以及二次側排氣閥，配置於該二次側氣體排氣流路； 而該流量控制器包括：控制閥，和該一次側閥與該二次側閥相連接；以及控制側孔口，配置於該控制閥與該二次側閥之間； 該氣體供給方法，將下述步驟交互地重複實行： （A）將該氣體供給流路之該一次側閥及該二次側閥開放，並將該一次側排氣閥及該二次側排氣閥封閉，往該處理腔室之內部供給氣體；以及 （B）將該氣體供給流路之該一次側閥及該二次側排氣閥開放，並將該一次側排氣閥及該二次側閥封閉，從該氣體供給流路將氣體排氣。 （13） 如前述（9）至前述（12）中任一項記載之氣體供給方法，其中， 該流量控制器至少包括一個壓力感測器； 該氣體供給方法，包含： 從複數該氣體供給流路中之至少1條該氣體供給流路，往該處理腔室之內部供給氣體；以及 施行配置於複數該氣體供給流路中之另一該氣體供給流路的該流量控制器之自診斷； 在進行該流量控制器之自診斷時，實行： 往配置於另一該氣體供給流路之該流量控制器的內部充填氣體； 將另一該氣體供給流路之該二次側排氣閥開放，將充填至該流量控制器之內部的氣體排氣；以及 將使充填之該氣體排氣時的該流量控制器之內部壓力的降下特性之實測值，與該流量控制器的出貨時之降下特性比較。 （14） 如前述（13）記載之氣體供給方法，其中， 該流量控制器包括複數壓力感測器； 在進行該流量控制器之自診斷時，進一步實行： 以複數該壓力感測器，測定充填該氣體後的該流量控制器之內部壓力、與將充填之該氣體排氣後的該流量控制器之內部壓力；以及 將以複數該壓力感測器各自測定出之內部壓力的測定值相互比較。 In addition, the following configurations also belong to the technical features disclosed in the present invention. (1) A gas supply system for supplying gas to a processing chamber, comprising: a plurality of gas supply flow paths capable of independently supplying gas to the processing chamber; a flow controller configured in each of the plurality of gas supply flow paths ; a primary side valve, configured upstream of the flow controller in the gas supply flow path; a primary side gas exhaust flow path, branched between the flow controller and the primary side valve in the gas supply flow path , connected to the primary side exhaust mechanism; the primary side exhaust valve is arranged in the primary side gas exhaust flow path; the secondary side valve is arranged in the downstream side of the flow controller in the gas supply flow path; the secondary a side gas exhaust flow path, branched between the flow controller and the secondary side valve in the gas supply flow path, and connected to the secondary side exhaust mechanism; and a secondary side exhaust valve disposed on the two side Secondary side gas exhaust flow path; The flow controller includes: a control valve connected to the primary side valve and the secondary side valve; and a control side orifice configured between the control valve and the secondary side valve. (2) The gas supply system described in (1) above, wherein, It further includes: an exhaust-side orifice disposed upstream of the secondary-side exhaust valve in the secondary-side gas exhaust flow path; and a chamber-side orifice disposed in the gas supply flow path and Between the connection portion of the secondary side gas exhaust flow path and the secondary side valve; The opening on the control side has the minimum machining limit aperture; The hole diameters of the exhaust side opening and the chamber side opening are different from each other. (3) The gas supply system described in (2) above, wherein, The ratio of the aperture sizes of the exhaust-side orifice to the chamber-side orifice is determined according to the ratio of the target flow rate of the gas supplied to the processing chamber relative to the flow rate of the gas output from the control-side orifice. (4) The gas supply system according to any one of the aforementioned (1) to the aforementioned (3), wherein, The plurality of gas supply flow paths are connected to the processing chamber after converging in the downstream side of the secondary side valve. (5) The gas supply system according to any one of the aforementioned (1) to the aforementioned (4), wherein, The gas supply flow path includes a plurality of branch supply pipes independently supplying gas to a plurality of different positions inside the processing chamber; the flow controller and the secondary side valve are independently connected to the plurality of branch supply pipes. , the secondary side gas exhaust flow path and the secondary side exhaust valve. (6) The gas supply system described in (5) above, wherein, The gas supply flow path is branched into a plurality of branch supply pipes between the connection portion with the primary side gas exhaust flow path and the flow controller. (7) The gas supply system described in (5) or (6) above, wherein The plurality of branch supply pipes can independently supply the gas to at least the edge region and the center region of the substrate introduced into the processing chamber. (8) A plasma processing device for processing a substrate, comprising: a processing chamber; a substrate support disposed inside the processing chamber; the gas supply system described in any one of (1) to (7) above, to the Gas is supplied inside the processing chamber; and a plasma generating unit generates plasma from the gas in the processing chamber. (9) A gas supply method using a gas supply system, The gas supply system includes: a plurality of gas supply flow paths, which can independently supply gas to the processing chamber; a flow controller, arranged in each of the plurality of gas supply flow paths; a primary side valve, arranged in the gas supply flow path; The upstream side of the flow controller in the supply flow path; the primary side gas exhaust flow path, branched between the flow controller and the primary side valve in the gas supply flow path, and connected to the primary side exhaust mechanism; The primary side exhaust valve is arranged on the primary side gas exhaust flow path; the secondary side valve is arranged on the downstream side of the flow controller in the gas supply flow path; the secondary side gas exhaust flow path is arranged on the The flow controller in the gas supply flow path is branched between the secondary side valve and connected to the secondary side exhaust mechanism; and the secondary side exhaust valve is arranged in the secondary side gas exhaust flow path; The flow controller includes: a control valve, connected to the primary side valve and the secondary side valve; and a control side orifice, configured between the control valve and the secondary side valve; The gas supply method comprises the steps of: (A) Opening the primary side valve and the secondary side valve of at least one gas supply channel to supply gas to the inside of the processing chamber; (B) closing the primary side valve and the secondary side valve opened in the (A) step; (C) opening the primary-side exhaust valve and the secondary-side exhaust valve of the at least one gas supply channel that supplies gas to the inside of the processing chamber in the (A) step, from the at least one The gas supply flow path exhausts the gas; and (D) Close the primary side exhaust valve and the secondary side exhaust valve opened in the step (C). (10) The gas supply method described in (9) above, wherein, The method further includes the following steps: (E) After closing the primary-side exhaust valve and the secondary-side exhaust valve, opening the secondary-side valve, and checking the remaining gas inside the flow controller. (11) The gas supply method described in (9) or (10) above, wherein, A cycle including at least the (A) step to the (D) step is repeatedly performed. (12) A gas supply method using a gas supply system, The gas supply system includes: a plurality of gas supply flow paths, which can independently supply gas to the processing chamber; a flow controller, arranged in each of the plurality of gas supply flow paths; a primary side valve, arranged in the gas supply flow path; The upstream side of the flow controller in the supply flow path; the primary side gas exhaust flow path, branched between the flow controller and the primary side valve in the gas supply flow path, and connected to the primary side exhaust mechanism; The primary side exhaust valve is arranged on the primary side gas exhaust flow path; the secondary side valve is arranged on the downstream side of the flow controller in the gas supply flow path; the secondary side gas exhaust flow path is arranged on the The flow controller in the gas supply flow path is branched between the secondary side valve and connected to the secondary side exhaust mechanism; and the secondary side exhaust valve is arranged in the secondary side gas exhaust flow path; The flow controller includes: a control valve, connected to the primary side valve and the secondary side valve; and a control side orifice, configured between the control valve and the secondary side valve; In this gas supply method, the following steps are alternately repeated: (A) Open the primary side valve and the secondary side valve of the gas supply flow path, close the primary side exhaust valve and the secondary side exhaust valve, and supply gas to the inside of the processing chamber; as well as (B) Open the primary side valve and the secondary side exhaust valve of the gas supply flow path, close the primary side exhaust valve and the secondary side valve, and exhaust the gas from the gas supply flow path . (13) The gas supply method according to any one of the aforementioned (9) to the aforementioned (12), wherein, The flow controller includes at least one pressure sensor; The gas supply method includes: supplying gas from at least one of the plurality of gas supply channels to the interior of the processing chamber; and performing self-diagnosis of the flow controller disposed in another gas supply flow path among the plurality of gas supply flow paths; When performing self-diagnosis of the flow controller, implement: Filling the inside of the flow controller configured in another gas supply flow path with gas; opening the secondary-side exhaust valve of the other gas supply channel to exhaust the gas filled inside the flow controller; and The actual measurement value of the drop characteristic of the internal pressure of the flow controller when the filled gas is exhausted was compared with the drop characteristic of the flow controller when it was shipped. (14) The gas supply method described in (13) above, wherein, The flow controller includes a plurality of pressure sensors; When performing self-diagnosis of the flow controller, further implement: Using a plurality of the pressure sensors to measure the internal pressure of the flow controller after filling the gas and the internal pressure of the flow controller after exhausting the filled gas; and The measured values of the internal pressures measured by each of the plurality of pressure sensors are compared with each other.

（15） 一種控制往處理腔室內的氣體之供給的氣體控制系統，包含：複數氣體供給流路，可對該處理腔室獨立地供給氣體；孔口，配置於複數該氣體供給流路中的各氣體供給流路；一次側閥，配置於該氣體供給流路中的該孔口之上游側；一次側氣體排氣流路，於該氣體供給流路中的該孔口與該一次側閥之間分支，連接至一次側排氣機構；一次側排氣閥，配置於該一次側氣體排氣流路；二次側閥，配置於該氣體供給流路中的該孔口之下游側；二次側氣體排氣流路，於該氣體供給流路中的該孔口與該二次側閥之間分支，連接至二次側排氣機構；二次側排氣閥，配置於該二次側氣體排氣流路；以及控制部，獨立地控制該一次側閥、該一次側排氣閥、該二次側閥及該二次側排氣閥之開度； 該控制部實行第1控制與第2控制： 該第1控制，交互地重複實行如下步驟：氣體供給步驟，藉由將該一次側閥及該二次側閥開放，並將該一次側排氣閥及該二次側排氣閥封閉，而往該處理腔室內供給氣體；以及排氣步驟，藉由將該一次側閥及該二次側閥封閉，並將該一次側排氣閥及該二次側排氣閥開放，而將該氣體供給流路之內部排氣； 該第2控制，在進行該氣體供給流路之內部的排氣時，使該一次側排氣機構及該二次側排氣機構動作，俾使該氣體供給流路之內部壓力至少較該處理腔室之內部壓力成為更低。 （16） 一種控制往處理腔室內的氣體之供給的氣體控制系統，包含：氣體供給流路，可對該處理腔室供給氣體；孔口，配置於該氣體供給流路；一次側閥，配置於該氣體供給流路中的該孔口之上游側；一次側氣體排氣流路，於該氣體供給流路中的該孔口與該一次側閥之間分支，連接至一次側排氣機構；一次側排氣閥，配置於該一次側氣體排氣流路；二次側閥，配置於該氣體供給流路中的該孔口之下游側；二次側氣體排氣流路，於該氣體供給流路中的該孔口與該二次側閥之間分支，連接至二次側排氣機構；二次側排氣閥，配置於該二次側氣體排氣流路；以及控制部，獨立地控制該一次側閥、該一次側排氣閥、該二次側閥及該二次側排氣閥之開度； 該控制部實行第1控制與第2控制： 該第1控制，交互地重複實行如下步驟：氣體供給步驟，藉由將該一次側閥及該二次側閥開放，並將該一次側排氣閥及該二次側排氣閥封閉，而往該處理腔室內供給氣體；以及排氣步驟，藉由將該一次側閥及該二次側閥封閉，並將該一次側排氣閥及該二次側排氣閥開放，而將該氣體供給流路之內部排氣； 該第2控制，在進行該氣體供給流路之內部的排氣時，使該一次側排氣機構及該二次側排氣機構動作，俾使該氣體至少殘留於該氣體供給流路之內部之控制； 排氣後的該氣體供給流路之內部壓力為100Torr以下。 （17） 如前述（16）記載之氣體控制系統，其中， 包含複數氣體供給流路，以可對該處理腔室獨立地供給氣體之方式構成；於複數該氣體供給流路，各自配置該孔口、該一次側閥、該一次側排氣閥、該二次側閥及該二次側排氣閥。 （18） 如前述（15）或該（17）記載之氣體控制系統，其中， 複數該氣體供給流路，於該二次側閥之下游側中合流後，連接至該處理腔室。 （19） 如前述（15）至前述（18）中任一項記載之氣體控制系統，其中， 該氣體供給流路，包括對於該處理腔室的內部中之複數不同位置獨立地供給該氣體的複數分支供給管；於複數該分支供給管，各自獨立地連接該二次側閥、該二次側氣體排氣流路及該二次側排氣閥。 （20） 如前述（19）記載之氣體控制系統，其中， 該氣體供給流路，在較和該一次側氣體排氣流路的連接部分更為下游側中，分支為複數該分支供給管。 （21） 如前述（19）或該（20）記載之氣體控制系統，其中 複數該分支供給管，可對導入至該處理腔室的內部之基板的至少邊緣區域及中心區域，獨立地供給該氣體。 （22） 如前述（15）至前述（21）中任一項記載之氣體控制系統，其中， 更包括流量控制器，其控制往該處理腔室之內部供給的該氣體之流量； 該孔口配置於該流量控制器之內部；該一次側閥、該一次側排氣閥、該二次側閥及該二次側排氣閥，配置於該流量控制器之外部。 （23） 如前述（22）記載之氣體控制系統，其中， 該流量控制器，更包括配置於該氣體供給流路中的該孔口之上游側的開度調整閥。 （24） 如前述（15）至前述（23）中任一項記載之氣體控制系統，其中， 更包括將該孔口、該一次側閥、該一次側排氣閥、該二次側閥及該二次側排氣閥連接成一體之安裝構件。 （25） 如前述（15）至前述（24）中任一項記載之氣體控制系統，其中， 往該處理腔室內供給的該氣體之流量為0.1sccm～10sccm。 （26） 如前述（15）至前述（25）中任一項記載之氣體控制系統，其中， 該控制部，實行將沉積程序及蝕刻程序交互地重複實行之控制：該沉積程序，在導入至該處理腔室的內部之基板上形成沉積物；該蝕刻程序，蝕刻該基板； 該沉積程序及該蝕刻程序，各自包含往該處理腔室內供給氣體之步驟、及將該氣體供給流路的內部排氣之步驟； 包含該沉積程序及該蝕刻程序之一個循環的處理時間為1秒～10秒。 （27） 一種電漿處理裝置，包含：處理腔室；基板支持部，配置於該處理腔室之內部；氣體供給部，往該處理腔室之內部供給氣體；射頻電源，至少與該基板支持部連接；以及控制部； 該氣體供給部，具備具有如下元件之氣體控制系統：複數氣體供給流路，可對該處理腔室獨立地供給氣體；孔口，配置於複數該氣體供給流路中的各氣體供給流路；一次側閥，配置於該氣體供給流路中的該孔口之上游側；一次側氣體排氣流路，於該氣體供給流路中的該孔口與該一次側閥之間分支，連接至一次側排氣機構；一次側排氣閥，配置於該一次側氣體排氣流路；二次側閥，配置於該氣體供給流路中的該孔口之下游側；二次側氣體排氣流路，於該氣體供給流路中的該孔口與該二次側閥之間分支，連接至二次側排氣機構；以及二次側排氣閥，配置於該二次側氣體排氣流路； 該控制部實行第1控制與第2控制： 該第1控制，交互地重複實行如下步驟：氣體供給步驟，藉由將該一次側閥及該二次側閥開放，並將該一次側排氣閥及該二次側排氣閥封閉，而往該處理腔室內供給氣體；以及排氣步驟，藉由將該一次側閥及該二次側閥封閉，並將該一次側排氣閥及該二次側排氣閥開放，而將該氣體供給流路之內部排氣； 該第2控制，在進行該氣體供給流路之內部的排氣時，使該一次側排氣機構及該二次側排氣機構動作，俾使該氣體供給流路之內部壓力至少較該處理腔室之內部壓力成為更低。 （28） 一種利用氣體控制系統之氣體控制方法， 該氣體控制系統包含：複數氣體供給流路，可對處理腔室獨立地供給氣體；孔口，配置於複數該氣體供給流路中的各氣體供給流路；一次側閥，配置於該氣體供給流路中的該孔口之上游側；一次側氣體排氣流路，於該氣體供給流路中的該孔口與該一次側閥之間分支，連接至一次側排氣機構；一次側排氣閥，配置於該一次側氣體排氣流路；二次側閥，配置於該氣體供給流路中的該孔口之下游側；二次側氣體排氣流路，於該氣體供給流路中的該孔口與該二次側閥之間分支，連接至二次側排氣機構；以及二次側排氣閥，配置於該二次側氣體排氣流路； 該氣體控制方法包含如下步驟： （A）將由複數該氣體供給流路選擇了至少其中之一而成的第1氣體供給流路群的該一次側閥及該二次側閥開放，並將該第1氣體供給流路群的該一次側排氣閥、該二次側排氣閥，及其他氣體供給流路的該一次側閥、該二次側閥、該一次側排氣閥及該二次側排氣閥封閉； （B）在將該第1氣體供給流路群中的該一次側閥及該二次側閥封閉後，將該第1氣體供給流路群的該一次側排氣閥、該二次側排氣閥開放； （C）在將該第1氣體供給流路群中的該一次側排氣閥、該二次側排氣閥封閉後，將由該其他氣體供給流路選擇了至少其中之一而成的第2氣體供給流路群的該一次側閥及該二次側閥開放；以及 （D）在將該第2氣體供給流路群中的該一次側閥及該二次側閥封閉後，將該第2氣體供給流路群的該一次側排氣閥、該二次側排氣閥開放。 （29） 如前述（28）記載之氣體控制方法，其中， 將包含該（A）步驟與該（B）步驟之第1程序、及包含該（C）步驟與該（D）步驟之第2程序，交互地重複實行。 (15) A gas control system for controlling the supply of gas to a processing chamber, comprising: a plurality of gas supply channels capable of independently supplying gases to the processing chamber; flow path; a primary side valve arranged upstream of the orifice in the gas supply flow path; a primary side gas exhaust flow path branched between the orifice in the gas supply flow path and the primary side valve , connected to the primary side exhaust mechanism; the primary side exhaust valve is arranged on the primary side gas exhaust flow path; the secondary side valve is arranged on the downstream side of the orifice in the gas supply flow path; the secondary side The gas exhaust flow path is branched between the orifice in the gas supply flow path and the secondary side valve, and is connected to the secondary side exhaust mechanism; the secondary side exhaust valve is arranged on the secondary side gas an exhaust flow path; and a control unit that independently controls the opening of the primary side valve, the primary side exhaust valve, the secondary side valve, and the secondary side exhaust valve; The control department implements the first control and the second control: The first control alternately repeats the following steps: the gas supply step is to open the primary side valve and the secondary side valve, close the primary side exhaust valve and the secondary side exhaust valve, and supplying gas into the processing chamber; and exhausting the gas by closing the primary side valve and the secondary side valve, and opening the primary side exhaust valve and the secondary side exhaust valve Internal exhaust of the supply flow path; The second control is to operate the primary side exhaust mechanism and the secondary side exhaust mechanism so that the internal pressure of the gas supply flow path is at least lower than the process pressure when exhausting the inside of the gas supply flow path. The internal pressure of the chamber becomes lower. (16) A gas control system for controlling the supply of gas to a processing chamber, comprising: a gas supply flow path capable of supplying gas to the processing chamber; an orifice configured in the gas supply flow path; a primary side valve configured in the gas The upstream side of the orifice in the supply flow path; the primary side gas exhaust flow path, branched between the orifice in the gas supply flow path and the primary side valve, connected to the primary side exhaust mechanism; the primary side The exhaust valve is arranged in the primary side gas exhaust flow path; the secondary side valve is arranged on the downstream side of the orifice in the gas supply flow path; the secondary side gas exhaust flow path is arranged in the gas supply flow path The branch between the orifice in the road and the secondary side valve is connected to the secondary side exhaust mechanism; the secondary side exhaust valve is arranged in the secondary side gas exhaust flow path; and the control unit is independently Control the opening of the primary side valve, the primary side exhaust valve, the secondary side valve and the secondary side exhaust valve; The control department implements the first control and the second control: The first control alternately repeats the following steps: the gas supply step is to open the primary side valve and the secondary side valve, close the primary side exhaust valve and the secondary side exhaust valve, and supplying gas into the processing chamber; and exhausting the gas by closing the primary side valve and the secondary side valve, and opening the primary side exhaust valve and the secondary side exhaust valve Internal exhaust of the supply flow path; The second control is to operate the primary side exhaust mechanism and the secondary side exhaust mechanism so that the gas remains at least inside the gas supply flow path when exhausting the inside of the gas supply flow path. the control of The internal pressure of the gas supply channel after exhaust is 100 Torr or less. (17) The gas control system described in (16) above, wherein, It includes a plurality of gas supply flow paths, which are configured to independently supply gas to the processing chamber; in the plurality of gas supply flow paths, the orifice, the primary side valve, the primary side exhaust valve, and the two The secondary side valve and the secondary side exhaust valve. (18) The gas control system described in (15) or (17) above, wherein, The plurality of gas supply flow paths are connected to the processing chamber after converging in the downstream side of the secondary side valve. (19) The gas control system according to any one of the aforementioned (15) to the aforementioned (18), wherein, The gas supply flow path includes a plurality of branch supply pipes independently supplying the gas to a plurality of different positions inside the processing chamber; the plurality of branch supply pipes are independently connected to the secondary side valve, the secondary side gas exhaust passage and the secondary side exhaust valve. (20) The gas control system as described in (19) above, wherein, The gas supply flow path is branched into a plurality of the branch supply pipes at a portion downstream of the connection with the primary side gas exhaust flow path. (twenty one) The gas control system described in (19) or (20) above, wherein The plurality of branch supply pipes can independently supply the gas to at least the edge region and the center region of the substrate introduced into the processing chamber. (twenty two) The gas control system according to any one of the aforementioned (15) to the aforementioned (21), wherein, further comprising a flow controller, which controls the flow of the gas supplied to the interior of the processing chamber; The orifice is arranged inside the flow controller; the primary side valve, the primary side exhaust valve, the secondary side valve and the secondary side exhaust valve are arranged outside the flow controller. (twenty three) The gas control system described in (22) above, wherein, The flow controller further includes an opening adjustment valve disposed upstream of the orifice in the gas supply flow path. (twenty four) The gas control system according to any one of the aforementioned (15) to the aforementioned (23), wherein, It further includes a mounting member that integrates the orifice, the primary side valve, the primary side exhaust valve, the secondary side valve, and the secondary side exhaust valve. (25) The gas control system according to any one of the aforementioned (15) to the aforementioned (24), wherein, The flow rate of the gas supplied into the processing chamber is 0.1 sccm˜10 sccm. (26) The gas control system according to any one of the aforementioned (15) to the aforementioned (25), wherein, The control unit implements the control of alternately repeating the deposition process and the etching process: the deposition process forms a deposit on the substrate introduced into the processing chamber; the etching process etches the substrate; The deposition process and the etching process each include a step of supplying a gas into the processing chamber, and a step of supplying the gas to an internal exhaust of the flow path; The processing time of one cycle including the deposition procedure and the etching procedure is 1 second to 10 seconds. (27) A plasma processing device, comprising: a processing chamber; a substrate supporting part, disposed inside the processing chamber; a gas supply part, supplying gas to the inside of the processing chamber; a radio frequency power supply, at least connected to the substrate supporting part; and the control department; The gas supply part is equipped with a gas control system having the following elements: a plurality of gas supply flow paths, capable of independently supplying gas to the processing chamber; orifices, arranged in each gas supply flow path of the plurality of gas supply flow paths; The primary side valve is arranged on the upstream side of the orifice in the gas supply flow path; the primary side gas exhaust flow path is branched between the orifice in the gas supply flow path and the primary side valve, and is connected to The primary side exhaust mechanism; the primary side exhaust valve is arranged on the primary side gas exhaust flow path; the secondary side valve is arranged on the downstream side of the orifice in the gas supply flow path; the secondary side gas exhaust a flow path branched between the orifice in the gas supply flow path and the secondary side valve, connected to a secondary side exhaust mechanism; and a secondary side exhaust valve disposed at the secondary side gas exhaust Flow path; The control department implements the first control and the second control: The first control alternately repeats the following steps: the gas supply step is to open the primary side valve and the secondary side valve, close the primary side exhaust valve and the secondary side exhaust valve, and supplying gas into the processing chamber; and exhausting the gas by closing the primary side valve and the secondary side valve, and opening the primary side exhaust valve and the secondary side exhaust valve Internal exhaust of the supply flow path; The second control is to operate the primary side exhaust mechanism and the secondary side exhaust mechanism so that the internal pressure of the gas supply flow path is at least lower than the process pressure when exhausting the inside of the gas supply flow path. The internal pressure of the chamber becomes lower. (28) A gas control method using a gas control system, The gas control system includes: a plurality of gas supply flow paths, which can independently supply gas to the processing chamber; orifices, which are arranged in each gas supply flow path of the plurality of gas supply flow paths; primary side valves, which are arranged in the gas supply flow paths The upstream side of the orifice in the flow path; the primary side gas exhaust flow path, which is branched between the orifice in the gas supply flow path and the primary side valve, is connected to the primary side exhaust mechanism; the primary side exhaust The gas valve is disposed on the primary side gas exhaust flow path; the secondary side valve is disposed on the downstream side of the orifice in the gas supply flow path; the secondary side gas exhaust flow path is disposed on the gas supply flow path The orifice in the branch is branched between the secondary side valve and connected to the secondary side exhaust mechanism; and the secondary side exhaust valve is configured in the secondary side gas exhaust flow path; The gas control method comprises the steps of: (A) Opening the primary side valve and the secondary side valve of the first gas supply flow path group in which at least one of the plurality of gas supply flow paths is selected, and opening the first gas supply flow path group The primary side exhaust valve, the secondary side exhaust valve, and the primary side valve, the secondary side valve, the primary side exhaust valve, and the secondary side exhaust valve of other gas supply flow paths are closed; (B) After closing the primary side valve and the secondary side valve in the first gas supply flow path group, supply the first gas to the primary side exhaust valve and the secondary side exhaust valve of the flow path group. air valve open; (C) After closing the primary side exhaust valve and the secondary side exhaust valve in the first gas supply flow path group, select at least one of the other gas supply flow paths into the second gas supply flow path group. The primary side valve and the secondary side valve of the gas supply channel group are opened; and (D) After closing the primary side valve and the secondary side valve in the second gas supply flow path group, supply the second gas to the primary side exhaust valve and the secondary side exhaust valve of the flow path group. Air valve is open. (29) The gas control method as described in (28) above, wherein, The first program including the (A) step and the (B) step, and the second program including the (C) step and the (D) step are alternately and repeatedly executed.

（30） 一種控制往處理腔室內的氣體之供給的氣體控制系統，包含：氣體供給流路，可對該處理腔室供給氣體；孔口，配置於該氣體供給流路；流量控制閥，配置於該氣體供給流路中的該孔口之上游側；一次側閥，配置於該氣體供給流路中的該流量控制閥之上游側；二次側閥，配置於該氣體供給流路中的該孔口之下游側；二次側氣體排氣流路，於該氣體供給流路中的該孔口與該二次側閥之間分支，連接至二次側排氣機構；二次側排氣閥，配置於該二次側氣體排氣流路；以及控制部，獨立地控制該流量控制閥、該一次側閥、該二次側閥及該二次側排氣閥之開度； 該控制部實行第1控制與第2控制： 該第1控制，交互地重複實行如下步驟：氣體供給步驟，藉由將該流量控制閥、該一次側閥及該二次側閥開放，並將該二次側排氣閥封閉，而往該處理腔室內供給氣體；以及排氣步驟，藉由將該流量控制閥、該一次側閥及該二次側閥封閉，並將該二次側排氣閥開放，而將該氣體供給流路之內部排氣； 該第2控制，在進行該氣體供給步驟時，於該二次側閥之前先將該流量控制閥及該一次側閥開放，往該該孔口之下游側充填氣體後，將該二次側閥開放。 （31） 如前述（30）記載之氣體控制系統，其中， 該控制部，在進行該氣體供給步驟時，將該孔口之下游側的壓力升壓至預先決定的基準壓力後，將該二次側閥開放。 （32） 如前述（31）記載之氣體控制系統，其中， 該基準壓力，為該二次側閥之下游側的壓力之80%以上120%以下。 （33） 如前述（30）記載之氣體控制系統，其中， 該控制部，利用該孔口的下游側之壓力、在該氣體供給流路流通之氣體流量、氣體之供給時間，該氣體供給流路之內部溫度、及在該二次側閥之下游側流通的其他氣體之流量中的至少一種參數，決定該二次側閥之開放時序。 （34） 如前述（30）至前述（33）中任一項記載之氣體控制系統，其中， 該控制部，以在往該孔口之下游側的氣體之充填前決定的供給流量，實行該氣體之充填。 （35） 如前述（30）至前述（33）中任一項記載之氣體控制系統，其中， 該氣體供給流路，可對該處理腔室內之不同區域獨立地供給氣體； 該控制部，以利用在該二次側閥之下游側流通的其他氣體之流量、該處理腔室之溫度、往該不同區域分別供給的氣體之流量比、或該孔口的下游側之壓力中的至少一種參數而決定之供給流量，實行該氣體之充填。 （36） 如前述（30）至前述（33）中任一項記載之氣體控制系統，其中， 包括流量控制器，其控制該孔口的下游側之壓力，控制往該處理腔室之內部供給的該氣體之流量。 （37） 如前述（36）記載之氣體控制系統，其中， 該孔口配置於該流量控制器之內部。 （38） 如前述（30）至前述（37）中任一項記載之氣體控制系統，其中， 包含：一次側氣體排氣流路，於該氣體供給流路中的該孔口與該一次側閥之間分支，連接至一次側排氣機構；以及一次側排氣閥，配置於該一次側氣體排氣流路。 （39） 如前述（30）至前述（38）中任一項記載之氣體控制系統，其中， 包括複數該氣體供給流路，以可對該處理腔室獨立地供給氣體之方式構成。 （40） 如前述（39）記載之氣體控制系統，其中， 於複數該氣體供給流路，各自分別獨立地供給不同種類的氣體； 該控制部，實行如下控制：依該氣體供給流路之內部壓力，而省略將該氣體供給流路之內部排氣的步驟。 （41） 一種電漿處理裝置，包含：處理腔室；基板支持部，配置於該處理腔室之內部；氣體供給部，往該處理腔室之內部供給氣體；射頻電源，至少與該基板支持部連接；以及控制部； 該電漿處理裝置包括：氣體供給流路，可對該處理腔室供給氣體；孔口，配置於該氣體供給流路；流量控制閥，配置於該氣體供給流路中的該孔口之上游側；一次側閥，配置於該氣體供給流路中的該流量控制閥之上游側；二次側閥，配置於該氣體供給流路中的該孔口之下游側；二次側氣體排氣流路，於該氣體供給流路中的該孔口與該二次側閥之間分支，連接至二次側排氣機構；以及二次側排氣閥，配置於該二次側氣體排氣流路； 該控制部實行第1控制與第2控制：該第1控制，交互地重複實行如下步驟：氣體供給步驟，藉由將該流量控制閥、該一次側閥及該二次側閥開放，並將該一次側排氣閥及該二次側排氣閥封閉，而往該處理腔室內供給氣體；以及排氣步驟，藉由將該流量控制閥、該一次側閥及該二次側閥封閉，並將該一次側排氣閥及該二次側排氣閥開放，而將該氣體供給流路之內部排氣； 該第2控制，在進行該氣體供給步驟時，於該二次側閥之前先將該流量控制閥及該一次側閥開放，往該該孔口之下游側充填氣體後，將該二次側閥開放。 （42） 一種使用氣體控制系統的基板之電漿處理方法， 該氣體控制系統，包含：氣體供給流路，可對收納該基板之處理腔室供給氣體；孔口，配置於該氣體供給流路；流量控制閥，配置於該氣體供給流路中的該孔口之上游側；一次側閥，配置於該氣體供給流路中的該流量控制閥之上游側；二次側閥，配置於該氣體供給流路中的該孔口之下游側；二次側氣體排氣流路，於該氣體供給流路中的該孔口與該二次側閥之間分支，連接至二次側排氣機構；以及二次側排氣閥，配置於該二次側氣體排氣流路； 該電漿處理方法，交互地重複實行如下步驟：（A）氣體供給步驟，藉由將該流量控制閥、該一次側閥及該二次側閥開放，並將該一次側排氣閥及該二次側排氣閥封閉，而往該處理腔室內供給氣體；以及（B）排氣步驟，藉由將該流量控制閥、該一次側閥及該二次側閥封閉，並將該一次側排氣閥及該二次側排氣閥開放，而將該氣體供給流路之內部排氣； 進行該（B）步驟時，於該二次側閥前先將該流量控制閥及該一次側閥開放，在往該該孔口之下游側充填氣體後，將該二次側閥開放。 (30) A gas control system for controlling the supply of gas to a processing chamber, comprising: a gas supply flow path capable of supplying gas to the processing chamber; an orifice configured in the gas supply flow path; a flow control valve configured in the gas The upstream side of the orifice in the supply flow path; the primary side valve is arranged on the upstream side of the flow control valve in the gas supply flow path; the secondary side valve is arranged at the orifice in the gas supply flow path The downstream side; the secondary side gas exhaust flow path, which is branched between the orifice in the gas supply flow path and the secondary side valve, is connected to the secondary side exhaust mechanism; the secondary side exhaust valve, arranged in the secondary side gas exhaust flow path; and a control unit independently controlling the opening degrees of the flow control valve, the primary side valve, the secondary side valve, and the secondary side exhaust valve; The control department implements the first control and the second control: The first control alternately repeats the following steps: the gas supply step, by opening the flow control valve, the primary side valve, and the secondary side valve, and closing the secondary side exhaust valve, to the supplying gas in the processing chamber; and an exhaust step of supplying the gas to the flow path by closing the flow control valve, the primary side valve, and the secondary side valve, and opening the secondary side exhaust valve internal exhaust; In the second control, when the gas supply step is performed, the flow control valve and the primary side valve are opened before the secondary side valve, and after filling the downstream side of the orifice with gas, the secondary side valve is opened. The valve is open. (31) The gas control system as described in (30) above, wherein, The control unit raises the pressure on the downstream side of the orifice to a predetermined reference pressure when performing the gas supply step, and then opens the secondary side valve. (32) The gas control system as described in (31) above, wherein, The reference pressure is not less than 80% and not more than 120% of the pressure on the downstream side of the secondary side valve. (33) The gas control system as described in (30) above, wherein, The control unit uses the pressure on the downstream side of the orifice, the flow rate of gas flowing through the gas supply flow path, the supply time of gas, the internal temperature of the gas supply flow path, and the flow rate of the gas flowing downstream of the secondary side valve. At least one parameter among the flow rates of other gases determines the opening sequence of the secondary side valve. (34) The gas control system according to any one of the aforementioned (30) to the aforementioned (33), wherein, The control unit executes the filling of the gas at a supply flow rate determined before filling the gas downstream of the orifice. (35) The gas control system according to any one of the aforementioned (30) to the aforementioned (33), wherein, The gas supply flow path can independently supply gas to different areas in the processing chamber; The control unit utilizes the flow rate of other gases flowing downstream of the secondary side valve, the temperature of the processing chamber, the flow rate ratio of the gases respectively supplied to the different regions, or the pressure downstream of the orifice The supply flow rate determined by at least one of the parameters is used to carry out the filling of the gas. (36) The gas control system according to any one of the aforementioned (30) to the aforementioned (33), wherein, A flow controller is included to control the pressure on the downstream side of the orifice to control the flow of the gas supplied to the interior of the processing chamber. (37) The gas control system described in (36) above, wherein, The orifice is disposed inside the flow controller. (38) The gas control system according to any one of the aforementioned (30) to the aforementioned (37), wherein, Including: a primary side gas exhaust flow path, branched between the orifice in the gas supply flow path and the primary side valve, connected to the primary side exhaust mechanism; and a primary side exhaust valve, configured on the primary side Gas exhaust flow path. (39) The gas control system according to any one of the aforementioned (30) to the aforementioned (38), wherein, The plurality of gas supply channels are included so as to independently supply gas to the processing chamber. (40) The gas control system as described in (39) above, wherein, Each of the plurality of gas supply channels independently supplies different types of gas; The control unit executes control to omit the step of exhausting the inside of the gas supply flow path according to the internal pressure of the gas supply flow path. (41) A plasma processing device, comprising: a processing chamber; a substrate supporting part, disposed inside the processing chamber; a gas supply part, supplying gas to the inside of the processing chamber; a radio frequency power supply, at least connected to the substrate supporting part; and the control department; The plasma processing device includes: a gas supply flow path, capable of supplying gas to the processing chamber; an orifice, configured in the gas supply flow path; a flow control valve, configured upstream of the orifice in the gas supply flow path side; the primary side valve is arranged on the upstream side of the flow control valve in the gas supply flow path; the secondary side valve is arranged on the downstream side of the orifice in the gas supply flow path; the secondary side gas exhaust a flow path branched between the orifice in the gas supply flow path and the secondary side valve, connected to a secondary side exhaust mechanism; and a secondary side exhaust valve disposed at the secondary side gas exhaust Flow path; The control unit executes the first control and the second control: the first control alternately repeats the following steps: the gas supply step is by opening the flow control valve, the primary side valve and the secondary side valve, and the primary side exhaust valve and the secondary side exhaust valve are closed to supply gas into the processing chamber; and the exhaust step is by closing the flow control valve, the primary side valve and the secondary side valve, And open the primary side exhaust valve and the secondary side exhaust valve, and exhaust the internal exhaust of the gas supply flow path; In the second control, when the gas supply step is performed, the flow control valve and the primary side valve are opened before the secondary side valve, and after filling the downstream side of the orifice with gas, the secondary side valve is opened. The valve is open. (42) A method of plasma processing a substrate using a gas control system, The gas control system includes: a gas supply flow path, capable of supplying gas to a processing chamber for accommodating the substrate; an orifice, arranged in the gas supply flow path; and a flow control valve, arranged in the hole in the gas supply flow path The upstream side of the port; the primary side valve is arranged on the upstream side of the flow control valve in the gas supply flow path; the secondary side valve is arranged on the downstream side of the orifice in the gas supply flow path; the secondary side a gas exhaust flow path branched between the orifice in the gas supply flow path and the secondary side valve, connected to a secondary side exhaust mechanism; and a secondary side exhaust valve disposed on the secondary side Gas exhaust flow path; In the plasma treatment method, the following steps are alternately repeated: (A) gas supply step, by opening the flow control valve, the primary side valve, and the secondary side valve, and opening the primary side exhaust valve and the closing the secondary side exhaust valve to supply gas into the processing chamber; and (B) exhausting step by closing the flow control valve, the primary side valve and the secondary side valve, The exhaust valve and the secondary side exhaust valve are opened, and the internal exhaust of the gas supply flow path is exhausted; When performing the step (B), the flow control valve and the primary valve are opened before the secondary valve, and the secondary valve is opened after filling the downstream side of the orifice with gas.

本發明係參考例示性實施形態而進行說明，但此等說明之用意並未解釋為限定本發明。所屬技術領域中具有通常知識者，應可在參考說明時，思及例示性實施形態之各種修正及組合、以及本發明之其他實施形態。例如，圖3～圖11之實施形態，若無矛盾則亦可與圖15～圖21之實施形態組合。因此，添附之發明申請專利範圍，其意旨在於包含任意之此等修正或實施形態。The present invention has been described with reference to exemplary embodiments, but these descriptions are not intended to be construed as limiting the present invention. Those skilled in the art should be able to conceive various modifications and combinations of the exemplary embodiments and other embodiments of the present invention when referring to the description. For example, the embodiments shown in FIGS. 3 to 11 can also be combined with the embodiments shown in FIGS. 15 to 21 if there is no conflict. Therefore, the appended claims for invention are intended to include any such amendments or implementation forms.

1:電漿處理裝置 2:控制部 2a:電腦 2a1:處理部 2a2:記憶部 2a3:通訊介面 10:電漿處理腔室 10a:側壁 10e:氣體排出口 10s:電漿處理空間 11:基板支持部 11a:本體部 11b:環組件 12:電漿產生部 13:噴淋頭 14c,14m,14e:氣體供給口 15c,15m,15e:氣體擴散室 16:氣體導入口 20:氣體供給部 30:電源 31:射頻電源 31a:第1射頻訊號產生部 31b:第2射頻訊號產生部 32:直流電源 32a:第1直流訊號產生部 32b:第2直流訊號產生部 40:排氣系統 100,100a~100e:氣體源 110,110a~110e:流量控制單元 111,111c,111e,111m:流量控制器 112:內部供給管 112a:一次側內部供給管 112b:二次側內部供給管 113,180,181:孔口 114,115:壓力感測器 116:控制閥 117:控制電路 120,120a~120e:一次側供給管 121,121a~121e:一次側閥 130:一次側排氣管 131:排氣單元 132,132a~132e:一次側排氣閥 140,140c,140e,140m:二次側供給管 141,141a~141e:二次側閥 150:二次側排氣管 151:排氣單元 152,152a~152e:二次側排氣閥 160:氣體供給部 161:氣體源 162:流量控制器 170:安裝板 P1,P2:內部壓力 S:尖波 W:基板 1: Plasma treatment device 2: Control Department 2a: computer 2a1: Processing Department 2a2: memory department 2a3: Communication interface 10: Plasma treatment chamber 10a: side wall 10e: Gas outlet 10s: Plasma treatment space 11: Substrate support part 11a: Body part 11b: Ring assembly 12: Plasma Generation Department 13: sprinkler head 14c, 14m, 14e: gas supply port 15c, 15m, 15e: gas diffusion chamber 16: Gas inlet 20: Gas supply part 30: Power 31: RF power supply 31a: The first radio frequency signal generation part 31b: The second radio frequency signal generation part 32: DC power supply 32a: The first DC signal generating part 32b: The second DC signal generation part 40:Exhaust system 100,100a~100e: gas source 110, 110a~110e: flow control unit 111, 111c, 111e, 111m: flow controller 112: Internal supply pipe 112a: primary side internal supply pipe 112b: Secondary side internal supply pipe 113, 180, 181: Orifice 114,115: pressure sensor 116: Control valve 117: control circuit 120, 120a~120e: primary side supply pipe 121,121a~121e: primary side valve 130: primary side exhaust pipe 131: exhaust unit 132, 132a~132e: primary side exhaust valve 140, 140c, 140e, 140m: secondary side supply pipe 141,141a~141e: Secondary side valve 150: Secondary side exhaust pipe 151: exhaust unit 152,152a~152e: Secondary side exhaust valve 160: gas supply unit 161: gas source 162: Flow controller 170: Mounting plate P1, P2: internal pressure S: sharp wave W: Substrate

圖1係顯示處理開始時之尖波的發生之樣子的圖表。 圖2係顯示處理結束時之氣體下降回應性的惡化之樣子的圖表。 圖3係顯示實施形態之晶圓處理系統的構成例之說明圖。 圖4係顯示實施形態之電漿處理裝置的構成例之剖面圖。 圖5係顯示實施形態之氣體供給部的構成例之系統圖。 圖6係顯示氣體供給部的另一構成例之說明圖。 圖7係顯示氣體供給部的另一構成例之說明圖。 圖8(a)~(e)係示意實施形態之晶圓處理中的流量控制器內之樣子的說明圖。 圖9係顯示實施形態之晶圓處理中的流量控制器內之壓力的圖表。 圖10係顯示實施形態之晶圓處理中的各種構件之動作時序的說明圖。 圖11(a)~(e)係示意另一實施形態之晶圓處理中的流量控制器內之樣子的說明圖。 圖12係顯示實施形態之處理開始時的腔室內之樣子的圖表。 圖13係顯示流量控制器內之抽真空時間與內部壓力的關係之圖表。 圖14係流量控制器內之抽真空時間與電漿處理腔室之內部壓力的關係之圖表。 圖15係顯示第2實施形態之基板處理中的各種構件之動作時序的說明圖。 圖16(a)~(e)係示意第2實施形態之基板處理中的流量控制器內之樣子的說明圖。 圖17係顯示另一實施形態之基板處理中的各種構件之動作時序的說明圖。 圖18係示意另一實施形態之基板處理中的流量控制器內之樣子的說明圖。 圖19係顯示氣體供給部的另一構成例之說明圖。 圖20係顯示第2實施形態之控制方法的效果之圖表。 圖21係顯示氣體供給部的另一構成例之說明圖。 Fig. 1 is a graph showing the occurrence of spikes at the start of processing. Fig. 2 is a graph showing the deterioration of the gas drop responsiveness at the end of the treatment. Fig. 3 is an explanatory diagram showing a configuration example of a wafer processing system according to the embodiment. Fig. 4 is a cross-sectional view showing a configuration example of the plasma processing apparatus according to the embodiment. Fig. 5 is a system diagram showing a configuration example of a gas supply unit in the embodiment. Fig. 6 is an explanatory view showing another configuration example of the gas supply unit. Fig. 7 is an explanatory diagram showing another configuration example of the gas supply unit. 8( a ) to ( e ) are explanatory diagrams showing the inside of the flow controller in wafer processing according to the embodiment. FIG. 9 is a graph showing the pressure in the flow controller in wafer processing according to the embodiment. FIG. 10 is an explanatory diagram showing the sequence of operations of various components in wafer processing according to the embodiment. 11( a ) to ( e ) are explanatory views showing the inside of the flow controller in wafer processing according to another embodiment. Fig. 12 is a graph showing the state of the inside of the chamber at the start of the treatment according to the embodiment. Fig. 13 is a graph showing the relationship between the evacuation time and the internal pressure in the flow controller. 14 is a graph showing the relationship between the evacuation time in the flow controller and the internal pressure of the plasma processing chamber. Fig. 15 is an explanatory view showing the sequence of operations of various components in the substrate processing according to the second embodiment. 16( a ) to ( e ) are explanatory views showing the inside of the flow controller in the substrate processing according to the second embodiment. FIG. 17 is an explanatory view showing the sequence of operations of various components in substrate processing according to another embodiment. Fig. 18 is an explanatory view showing the inside of the flow controller in substrate processing according to another embodiment. Fig. 19 is an explanatory diagram showing another configuration example of the gas supply unit. Fig. 20 is a graph showing the effect of the control method of the second embodiment. Fig. 21 is an explanatory view showing another configuration example of the gas supply unit.

13:噴淋頭 13: sprinkler head

14c,14m,14e:氣體供給口 14c, 14m, 14e: gas supply port

20:氣體供給部 20: Gas supply part

100,100a~100e:氣體源 100,100a~100e: gas source

110a~110e:流量控制單元 110a~110e: flow control unit

111c,111e,111m:流量控制器 111c, 111e, 111m: flow controller

120a~120e:一次側供給管 120a~120e: primary side supply pipe

121a~121e:一次側閥 121a~121e: primary side valve

130:一次側排氣管 130: primary side exhaust pipe

131:排氣單元 131: exhaust unit

132a~132e:一次側排氣閥 132a~132e: primary side exhaust valve

140c,140e,140m:二次側供給管 140c, 140e, 140m: secondary side supply pipe

141:二次側閥 141: Secondary side valve

150:二次側排氣管 150: Secondary side exhaust pipe

151:排氣單元 151: exhaust unit

152:二次側排氣閥 152: Secondary side exhaust valve

160:氣體供給部 160: gas supply unit

161:氣體源 161: gas source

162:流量控制器 162: Flow controller

Claims (20)

一種氣體供給系統，往處理腔室內供給氣體； 該氣體供給系統包含： 複數氣體供給流路，可對該處理腔室獨立地供給氣體； 流量控制器，配置於複數該氣體供給流路中的各氣體供給流路； 一次側閥，配置於該氣體供給流路中的該流量控制器之上游側； 一次側氣體排氣流路，在該氣體供給流路中的該流量控制器與該一次側閥之間分支，連接至一次側排氣機構； 一次側排氣閥，配置於該一次側氣體排氣流路； 二次側閥，配置於該氣體供給流路中的該流量控制器之下游側； 二次側氣體排氣流路，在該氣體供給流路中的該流量控制器與該二次側閥之間分支，連接至二次側排氣機構；以及 二次側排氣閥，配置於該二次側氣體排氣流路； 而該流量控制器包括： 控制閥，和該一次側閥與該二次側閥相連接；以及 控制側孔口，配置於該控制閥與該二次側閥之間。 A gas supply system for supplying gas into the processing chamber; The gas supply system consists of: A plurality of gas supply flow paths can independently supply gas to the processing chamber; A flow controller arranged in each of the plurality of gas supply flow paths; a primary side valve disposed upstream of the flow controller in the gas supply flow path; a primary side gas exhaust flow path, branched between the flow controller and the primary side valve in the gas supply flow path, and connected to the primary side exhaust mechanism; A primary side exhaust valve, configured in the primary side gas exhaust flow path; a secondary side valve disposed downstream of the flow controller in the gas supply flow path; a secondary side gas exhaust flow path branched between the flow controller and the secondary side valve in the gas supply flow path, connected to a secondary side exhaust mechanism; and The secondary side exhaust valve is arranged in the secondary side gas exhaust flow path; And the flow controller includes: a control valve, and the primary side valve is connected to the secondary side valve; and The control side port is arranged between the control valve and the secondary side valve. 如請求項1之氣體供給系統，其中， 更包含： 排氣側孔口，配置於該二次側氣體排氣流路中的該二次側排氣閥之上游側；以及 腔室側孔口，配置於該氣體供給流路中的和該二次側氣體排氣流路的連接部與該二次側閥之間； 該控制側孔口具有最小加工極限之孔徑； 該排氣側孔口與該腔室側孔口之孔徑彼此不同。 Such as the gas supply system of claim 1, wherein, More include: an exhaust-side orifice disposed upstream of the secondary-side exhaust valve in the secondary-side gas exhaust flow path; and a chamber-side orifice disposed between a connection portion of the gas supply flow path and the secondary-side gas exhaust flow path and the secondary-side valve; The opening on the control side has the minimum machining limit aperture; The hole diameters of the exhaust side opening and the chamber side opening are different from each other. 如請求項2之氣體供給系統，其中， 依據往該處理腔室供給之氣體的目標流量相對於從該控制側孔口輸出的氣體之流量的比率，而決定該排氣側孔口與該腔室側孔口之孔徑大小的比率。 Such as the gas supply system of claim 2, wherein, According to the ratio of the target flow rate of the gas supplied to the processing chamber to the flow rate of the gas output from the control side port, the ratio of the pore size of the exhaust side port and the chamber side port is determined. 如請求項1至3中任一項之氣體供給系統，其中， 複數該氣體供給流路，於該二次側閥之下游側合流後，連接至該處理腔室。 The gas supply system according to any one of claims 1 to 3, wherein, The plurality of gas supply flow paths are connected to the processing chamber after converging at the downstream side of the secondary side valve. 如請求項1至4中任一項之氣體供給系統，其中， 該氣體供給流路，包括對於該處理腔室的內部中之複數不同位置獨立地供給氣體的複數分支供給管； 於複數該分支供給管，各自獨立地連接該流量控制器、該二次側閥、該二次側氣體排氣流路及該二次側排氣閥。 The gas supply system according to any one of claims 1 to 4, wherein, The gas supply flow path includes a plurality of branch supply pipes independently supplying gas to a plurality of different positions in the interior of the processing chamber; The flow controller, the secondary side valve, the secondary side gas exhaust channel, and the secondary side exhaust valve are independently connected to the plurality of branch supply pipes. 如請求項5之氣體供給系統，其中， 該氣體供給流路，在和該一次側氣體排氣流路的連接部與該流量控制器之間中，分支為複數該分支供給管。 Such as the gas supply system of claim 5, wherein, The gas supply flow path is branched into a plurality of branch supply pipes between the connection portion with the primary side gas exhaust flow path and the flow controller. 如請求項5或6之氣體供給系統，其中， 複數該分支供給管，可對導入至該處理腔室的內部之基板的至少邊緣區域及中心區域，獨立地供給該氣體。 Such as the gas supply system of claim 5 or 6, wherein, The plurality of branch supply pipes can independently supply the gas to at least the edge region and the center region of the substrate introduced into the processing chamber. 一種電漿處理裝置，用以處理基板； 該電漿處理裝置包含： 處理腔室； 基板支持體，配置於該處理腔室之內部； 如請求項1至7中任一項之氣體供給系統，往該處理腔室之內部供給氣體；以及 電漿產生部，由該處理腔室內的氣體產生電漿。 A plasma processing device for processing a substrate; The plasma treatment unit includes: processing chamber; a substrate support configured inside the processing chamber; The gas supply system according to any one of claims 1 to 7, supplying gas to the interior of the processing chamber; and The plasma generating unit generates plasma from the gas in the processing chamber. 一種氣體控制系統，控制往處理腔室內的氣體之供給； 該氣體控制系統包含： 氣體供給流路，可對該處理腔室供給氣體； 孔口，配置於該氣體供給流路； 一次側閥，配置於該氣體供給流路中的該孔口之上游側； 一次側氣體排氣流路，於該氣體供給流路中的該孔口與該一次側閥之間分支，連接至一次側排氣機構； 一次側排氣閥，配置於該一次側氣體排氣流路； 二次側閥，配置於該氣體供給流路中的該孔口之下游側； 二次側氣體排氣流路，於該氣體供給流路中的該孔口與該二次側閥之間分支，連接至二次側排氣機構； 二次側排氣閥，配置於該二次側氣體排氣流路；以及 控制部，獨立地控制該一次側閥、該一次側排氣閥、該二次側閥及該二次側排氣閥之開度； 該控制部實行第1控制與第2控制： 該第1控制，交互地重複實行如下步驟： 氣體供給步驟，藉由將該一次側閥及該二次側閥開放，並將該一次側排氣閥及該二次側排氣閥封閉，而往該處理腔室內供給氣體；以及 排氣步驟，藉由將該一次側閥及該二次側閥封閉，並將該一次側排氣閥及該二次側排氣閥開放，而將該氣體供給流路之內部排氣； 該第2控制，在進行該氣體供給流路之內部的排氣時，使該一次側排氣機構及該二次側排氣機構動作，俾使該氣體至少殘留於該氣體供給流路之內部； 排氣後的該氣體供給流路之內部壓力為100Torr以下。 A gas control system that controls the supply of gas to a processing chamber; the gas control system includes: a gas supply flow path that can supply gas to the processing chamber; an orifice configured in the gas supply flow path; a primary side valve, Arranged on the upstream side of the orifice in the gas supply flow path; the primary side gas exhaust flow path is branched between the orifice in the gas supply flow path and the primary side valve, and connected to the primary side exhaust mechanism; the primary side exhaust valve is arranged in the primary side gas exhaust flow path; the secondary side valve is arranged in the downstream side of the orifice in the gas supply flow path; the secondary side gas exhaust flow path is arranged in the The orifice in the gas supply flow path is branched between the secondary side valve and connected to the secondary side exhaust mechanism; the secondary side exhaust valve is configured in the secondary side gas exhaust flow path; and the control part, which independently controls the opening of the primary side valve, the primary side exhaust valve, the secondary side valve and the secondary side exhaust valve; the control part implements the first control and the second control: the first control , alternately repeat the following steps: The gas supply step is to supply gas to the processing chamber by opening the primary side valve and the secondary side valve, and closing the primary side exhaust valve and the secondary side exhaust valve. indoor supply gas; and an exhaust step of supplying the gas to the flow path by closing the primary side valve and the secondary side valve and opening the primary side exhaust valve and the secondary side exhaust valve Internal exhaust; The second control is to operate the primary side exhaust mechanism and the secondary side exhaust mechanism so that the gas remains at least in the gas supply flow path when exhausting the inside of the gas supply flow path. Inside the flow path; The internal pressure of the gas supply flow path after exhaust is 100 Torr or less. 如請求項9之氣體控制系統，其中， 包含複數氣體供給流路，以可對該處理腔室獨立地供給氣體之方式構成； 於複數該氣體供給流路，各自配置有該孔口、該一次側閥、該一次側排氣閥、該二次側閥及該二次側排氣閥。 Such as the gas control system of claim 9, wherein, Contains a plurality of gas supply flow paths, configured in such a way that gas can be independently supplied to the processing chamber; The orifice, the primary-side valve, the primary-side exhaust valve, the secondary-side valve, and the secondary-side exhaust valve are respectively arranged in the plurality of gas supply channels. 如請求項9或10之氣體控制系統，其中， 更包括流量控制器，其控制往該處理腔室之內部供給的該氣體之流量； 該孔口配置於該流量控制器之內部； 該一次側閥、該一次側排氣閥、該二次側閥及該二次側排氣閥，配置於該流量控制器之外部。 Such as the gas control system of claim 9 or 10, wherein, further comprising a flow controller, which controls the flow of the gas supplied to the interior of the processing chamber; The orifice is disposed inside the flow controller; The primary side valve, the primary side exhaust valve, the secondary side valve and the secondary side exhaust valve are arranged outside the flow controller. 如請求項11之氣體控制系統，其中， 該流量控制器，更包括配置於該氣體供給流路中的該孔口之上游側的開度調整閥。 Such as the gas control system of claim 11, wherein, The flow controller further includes an opening adjustment valve disposed upstream of the orifice in the gas supply flow path. 如請求項9至12中任一項之氣體控制系統，其中， 更包括將該孔口、該一次側閥、該一次側排氣閥、該二次側閥及該二次側排氣閥連接成一體之安裝構件。 The gas control system according to any one of claims 9 to 12, wherein, It further includes a mounting member that integrates the orifice, the primary side valve, the primary side exhaust valve, the secondary side valve, and the secondary side exhaust valve. 如請求項9至13中任一項之氣體控制系統，其中， 往該處理腔室內供給的該氣體之流量為0.1sccm～10sccm。 The gas control system according to any one of claims 9 to 13, wherein, The flow rate of the gas supplied into the processing chamber is 0.1 sccm˜10 sccm. 如請求項9至14中任一項之氣體控制系統，其中， 該控制部，實行將沉積程序及蝕刻程序交互地重複實行之控制： 該沉積程序，在導入至該處理腔室的內部之基板上形成沉積物； 該蝕刻程序，蝕刻該基板； 該沉積程序及該蝕刻程序，各自包含往該處理腔室內供給氣體之步驟、及將該氣體供給流路的內部排氣之步驟； 包含該沉積程序及該蝕刻程序之一個循環的處理時間為1秒～10秒。 The gas control system according to any one of claims 9 to 14, wherein, The control section implements the control of alternately repeating the deposition process and the etching process: The deposition process forms a deposit on the substrate introduced into the interior of the processing chamber; the etching process, etching the substrate; The deposition process and the etching process each include a step of supplying a gas into the processing chamber, and a step of supplying the gas to an internal exhaust of the flow path; The processing time of one cycle including the deposition procedure and the etching procedure is 1 second to 10 seconds. 一種氣體控制方法，利用氣體控制系統進行控制； 該氣體控制系統包含： 複數氣體供給流路，可對處理腔室獨立地供給氣體； 孔口，配置於複數該氣體供給流路中之各氣體供給流路； 一次側閥，配置於該氣體供給流路中的該孔口之上游側； 一次側氣體排氣流路，於該氣體供給流路中的該孔口與該一次側閥之間分支，連接至一次側排氣機構； 一次側排氣閥，配置於該一次側氣體排氣流路； 二次側閥，配置於該氣體供給流路中的該孔口之下游側； 二次側氣體排氣流路，於該氣體供給流路中的該孔口與該二次側閥之間分支，連接至二次側排氣機構；以及 二次側排氣閥，配置於該二次側氣體排氣流路； 該氣體控制方法包含如下步驟： （A）將由複數該氣體供給流路選擇了至少其中之一而成的第1氣體供給流路群的該一次側閥及該二次側閥開放，並將該第1氣體供給流路群的該一次側排氣閥、該二次側排氣閥，及其他氣體供給流路的該一次側閥、該二次側閥、該一次側排氣閥及該二次側排氣閥封閉； （B）在將該第1氣體供給流路群中的該一次側閥及該二次側閥封閉後，將該第1氣體供給流路群的該一次側排氣閥、該二次側排氣閥開放； （C）在將該第1氣體供給流路群中的該一次側排氣閥、該二次側排氣閥封閉後，將由該其他氣體供給流路選擇了之至少其中之一而成的第2氣體供給流路群的該一次側閥及該二次側閥開放；以及 （D）在將該第2氣體供給流路群中的該一次側閥及該二次側閥封閉後，將該第2氣體供給流路群的該一次側排氣閥、該二次側排氣閥開放。 A gas control method, using a gas control system for control; The gas control system consists of: Multiple gas supply flow paths can independently supply gas to the processing chamber; an orifice arranged in each of the plurality of gas supply flow paths; a primary side valve disposed upstream of the orifice in the gas supply flow path; a primary side gas exhaust flow path, branched between the orifice in the gas supply flow path and the primary side valve, and connected to a primary side exhaust mechanism; A primary side exhaust valve, configured in the primary side gas exhaust flow path; a secondary side valve disposed downstream of the orifice in the gas supply flow path; a secondary side gas exhaust flow path branched between the orifice in the gas supply flow path and the secondary side valve, connected to a secondary side exhaust mechanism; and The secondary side exhaust valve is arranged in the secondary side gas exhaust flow path; The gas control method comprises the steps of: (A) Opening the primary side valve and the secondary side valve of the first gas supply flow path group in which at least one of the plurality of gas supply flow paths is selected, and opening the first gas supply flow path group The primary side exhaust valve, the secondary side exhaust valve, and the primary side valve, the secondary side valve, the primary side exhaust valve, and the secondary side exhaust valve of other gas supply flow paths are closed; (B) After closing the primary side valve and the secondary side valve in the first gas supply flow path group, supply the first gas to the primary side exhaust valve and the secondary side exhaust valve of the flow path group. air valve open; (C) After closing the primary side exhaust valve and the secondary side exhaust valve in the first gas supply flow channel group, at least one of the other gas supply flow channels is selected. 2. The primary side valve and the secondary side valve of the gas supply channel group are opened; and (D) After closing the primary side valve and the secondary side valve in the second gas supply channel group, supply the second gas to the primary side exhaust valve and the secondary side exhaust valve of the channel group. Air valve is open. 如請求項16之氣體控制方法，其中， 將包含該（A）步驟與該（B）步驟之第1程序、及包含該（C）步驟與該（D）步驟之第2程序，交互地重複實行。 The gas control method of claim 16, wherein, The first program including the (A) step and the (B) step, and the second program including the (C) step and the (D) step are alternately and repeatedly executed. 一種氣體控制系統，用以控制往處理腔室內的氣體之供給； 該氣體控制系統包含： 氣體供給流路，可對該處理腔室供給氣體； 孔口，配置於該氣體供給流路； 流量控制閥，配置於該氣體供給流路中的該孔口之上游側； 一次側閥，配置於該氣體供給流路中的該流量控制閥之上游側； 二次側閥，配置於該氣體供給流路中的該孔口之下游側； 二次側氣體排氣流路，於該氣體供給流路中的該孔口與該二次側閥之間分支，連接至二次側排氣機構； 二次側排氣閥，配置於該二次側氣體排氣流路；以及 控制部，獨立地控制該流量控制閥、該一次側閥、該二次側閥及該二次側排氣閥之開度； 該控制部實行第1控制與第2控制： 該第1控制，交互地重複實行如下步驟： 氣體供給步驟，藉由將該流量控制閥、該一次側閥及該二次側閥開放，並將該二次側排氣閥封閉，而往該處理腔室內供給氣體；以及 排氣步驟，藉由將該流量控制閥、該一次側閥及該二次側閥封閉，並將該二次側排氣閥開放，而將該氣體供給流路之內部排氣； 該第2控制，在進行該氣體供給步驟時，於該二次側閥之前先將該流量控制閥及該一次側閥開放，在往該該孔口之下游側充填氣體後，將該二次側閥開放。 A gas control system for controlling the supply of gas to the processing chamber; The gas control system consists of: a gas supply flow path capable of supplying gas to the processing chamber; an orifice configured in the gas supply flow path; a flow control valve disposed upstream of the orifice in the gas supply flow path; a primary side valve disposed upstream of the flow control valve in the gas supply flow path; a secondary side valve disposed downstream of the orifice in the gas supply flow path; a secondary side gas exhaust flow path, branched between the orifice in the gas supply flow path and the secondary side valve, and connected to a secondary side exhaust mechanism; a secondary-side exhaust valve configured in the secondary-side gas exhaust flow path; and A control unit independently controls the opening degrees of the flow control valve, the primary side valve, the secondary side valve, and the secondary side exhaust valve; The control department implements the first control and the second control: The first control interactively repeats the following steps: a gas supply step of supplying gas into the processing chamber by opening the flow control valve, the primary side valve, and the secondary side valve, and closing the secondary side exhaust valve; and an exhaust step, by closing the flow control valve, the primary side valve, and the secondary side valve, and opening the secondary side exhaust valve, supplying the gas to the inside of the flow path to exhaust; In the second control, when performing the gas supply step, the flow control valve and the primary side valve are opened before the secondary side valve, and after filling the downstream side of the orifice with gas, the secondary side valve is opened. The side valve is open. 如請求項18之氣體控制系統，其中， 該控制部，在進行該氣體供給步驟時，將該孔口之下游側的壓力升壓至預先決定的基準壓力後，將該二次側閥開放。 Such as the gas control system of claim 18, wherein, The control unit raises the pressure on the downstream side of the orifice to a predetermined reference pressure when performing the gas supply step, and then opens the secondary side valve. 如請求項19之氣體控制系統，其中， 該基準壓力，為該二次側閥之下游側的壓力之80%以上120%以下。 Such as the gas control system of claim 19, wherein, The reference pressure is not less than 80% and not more than 120% of the pressure on the downstream side of the secondary side valve.
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