TW202309967A - Power supply assembly, plasma immersion ion implantation device and method - Google Patents

Abstract

A power supply assembly, a plasma immersion ion implantation device and a method. The power supply assembly comprises a shell, a first power supply, a second power supply and an output interface, wherein the first power supply and the second power supply are integrated in the shell, and the output interface is arranged on the shell; The first power supply is connected with the output interface, and the second power supply is connected with the output interface; The first power supply is used to output the first DC voltage signal, the second power supply is used to output the pulse voltage signal, and the output interface is used to output the first DC voltage signal, the pulse voltage signal or the superimposed signal. The superimposed signal is formed by the superposition of the first DC voltage signal and the pulse voltage signal.

Description

Power component, plasma immersion ion implantation apparatus and method

The present application relates to the technical field of semiconductor manufacturing, in particular to a power supply component, plasma immersion ion implantation equipment and method.

In the field of semiconductor manufacturing technology, the plasma immersion ion implantation process is to immerse the wafer in the plasma, and implant the ions in the plasma into the wafer as dopants, so as to change the characteristics of the material on the surface of the wafer. Among them, ions are specifically implanted into the wafer under the action of a bias voltage, and the bias voltage needs to be generated by a high-voltage DC pulse power supply.

At the same time, the plasma immersion implantation equipment includes an electrostatic chuck arranged in the chamber, and the electrostatic chuck is used for applying electrostatic adsorption to the wafer for reliable fixing. Among them, the electrostatic adsorption effect of the electrostatic chuck needs to be generated by an electrostatic adsorption power supply. Since the high-voltage DC pulse power supply and the electrostatic adsorption power supply are set up as independent devices, the wiring of the two is relatively complicated, and these lines will generate strong parasitic inductance and capacitance, which will cause the bias voltage output of the high-voltage DC pulse power supply Instability, which in turn causes a negative impact on the quality of the process.

The present application discloses a power supply assembly, plasma immersion ion implantation equipment and a method of using the same, in order to solve the problem in the related art that the multi-power supply structure layout will generate strong parasitic inductance and capacitance, which will affect the quality of the process.

In order to solve the above problems, the application adopts the following technical solutions:

In a first aspect, the present application provides a power supply assembly for plasma immersion ion implantation equipment, the power supply assembly includes a housing, a first power supply, a second power supply, and an output interface, wherein: the first power supply and the second power supply are integrated on In the casing, the output interface is arranged on the casing; the first power supply is connected to the output interface, and the second power supply is connected to the output interface; the first power supply is used to output a first DC voltage signal, and the second The power supply is used to output a pulse voltage signal, and the output interface is used to output the first DC voltage signal, the pulse voltage signal or a superimposed signal, and the superimposed signal is formed by superimposing the first DC voltage signal and the pulsed voltage signal.

In the second aspect, the present application provides a plasma immersion ion implantation equipment, which includes a process chamber, an electrostatic chuck, and the power supply assembly described in the first aspect of the application, the electrostatic chuck is arranged in the process chamber, and the power supply assembly Connect with the electrostatic chuck through the output interface.

In terms of third parties, this application provides a plasma immersion ion implantation method, which uses the plasma immersion ion implantation equipment described in the second aspect of the application; the method of use includes: transferring the wafer to be processed to the electrostatic chuck, controlling The first power supply outputs the first DC voltage signal, so that the wafer to be processed is adsorbed and fixed on the electrostatic chuck; the process gas is introduced into the process chamber for ignition to form plasma; The two power supplies output the pulse voltage signal and the superposition signal is output through the output interface, so that ions in the plasma are implanted into the wafer to be processed.

The technical solution adopted in this application can achieve the following beneficial effects:

In the power supply assembly of the plasma immersion ion implantation equipment disclosed in this application, since the first power supply and the second power supply are integrated in the same housing, the two can share the same output interface, so that the signal can be output through only one feeder , compared with the solution of the two power supplies in the related art that are routed separately, the power supply module of the present application can undoubtedly achieve the effect of simplifying the routing, reduce the generation of parasitic inductance and capacitance, and thus improve the quality of the process.

The following disclosure provides many different embodiments, or examples, of different means for implementing the disclosure. Specific examples of components and configurations are described below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, in the following description a first member is formed over or on a second member may include embodiments in which the first member and the second member are formed in direct contact, and may also include embodiments in which additional members An embodiment may be formed between the first member and the second member so that the first member and the second member may not be in direct contact. Additionally, the present disclosure may repeat reference numerals and/or letters in various instances. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and/or configurations discussed.

In addition, for ease of description, spatially relative terms such as "below", "beneath", "under", "above", "upper" and the like may be used herein to describe the relationship between one component or member and another(s) The relationship between components or components, as illustrated in the figure. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and thus the spatially relative descriptors used herein should be interpreted similarly.

Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the disclosure are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contains certain errors necessarily resulting from the standard deviation found in their respective testing measurements. Furthermore, as used herein, the term "about" generally means within 10%, 5%, 1%, or 0.5% of a given value or range. Alternatively, the term "about" means within an acceptable standard error of the mean when considered by one of ordinary skill in the art. Except in operating/working examples, or unless expressly specified otherwise, all numerical ranges such as for amounts of materials disclosed herein, durations of time, temperatures, operating conditions, ratios of amounts, and the like, Amounts, values and percentages should be understood as being modified by the term "about" in all instances. Accordingly, unless indicated to the contrary, the numerical parameters set forth in this disclosure and the accompanying claims are approximations that may vary as desired. At a minimum, each numerical parameter should at least be construed in light of the number of reported significant digits and by applying ordinary rounding techniques. Ranges can be expressed herein as from one endpoint to the other or as between two endpoints. All ranges disclosed herein are inclusive of endpoints unless otherwise specified.

The technical solutions disclosed in various embodiments of the present application will be described in detail below with reference to the accompanying drawings.

In order to solve the problem in the related art that the multi-power supply structure layout will generate strong parasitic inductance and capacitance and affect the quality of the process, an embodiment of the present application provides a power supply component of a plasma immersion ion implantation equipment.

As shown in FIGS. 1 to 4 , the power supply assembly 300 of the embodiment of the present application includes a casing 305 , a first power supply 302 , a second power supply 303 and an output interface 304 .

Wherein, the casing 305 is a basic component of the power supply assembly 300, which can provide an installation basis for other components of the power supply assembly 300, and can also play a certain protective role. Specifically, the first power supply 302 and the second power supply 303 are integrally disposed in the housing 305 , and the output interface 304 is disposed on the housing 305 .

The first power supply 302 is used to output the first DC voltage signal, and the second power supply 303 is used to output the pulse voltage signal; the first power supply 302 is connected to the output interface 304, and the second power supply 303 is connected to the output interface 304; the output interface 304 is used to output The first DC voltage signal, the pulse voltage signal or the superposition signal, the superposition signal is formed by superimposing the first DC voltage signal and the pulse voltage signal.

Specifically, the first power supply 302 is used to realize the adsorption and fixing function of the electrostatic chuck 200, and the first DC voltage signal output by it can be transmitted to the electrostatic chuck 200 through the output interface 304, and then to the electrode part in the electrostatic chuck 200. Power supply, an electric field will be generated around the electrode part, the molecules inside the wafer will be polarized under the action of the electric field, and polarized charges will be generated, and an electrostatic force will be generated between the polarized charges and the corresponding electric field, and the electrostatic force will effectively move the wafer Adsorbed and fixed on the electrostatic chuck 200.

As shown in FIG. 2 , it shows a waveform diagram of a first DC voltage signal output by the first power supply 302 . In an optional solution, the voltage value of the first DC voltage signal may be greater than or equal to -1.5Kv and less than or equal to 1.5Kv, that is, the voltage value output by the first power supply 302 is within the range of -1.5Kv to 1.5Kv, In this way, it can not only ensure that the electrostatic chuck 200 can generate effective electrostatic adsorption force, but also prevent the electrostatic chuck 200 from being damaged due to voltage overload.

In the embodiment of the present application, the specific value of the first DC voltage signal is not limited. In an optional solution, the voltage value of the first DC voltage signal in the embodiment of the present application may be greater than or equal to -1.5Kv and less than or equal to 1.5Kv. Specifically, the voltage value of the first DC voltage signal can be 1.5Kv (see the waveform on the upper side of the t-axis in FIG. side waveform). In another embodiment, the first DC voltage signal includes two sub-signals. In this case, when the first DC voltage signal is transmitted to the electrostatic chuck 200, the two sub-signals of the electrostatic chuck 200 can Different regions (such as the inner and outer rings) generate electrostatic adsorption to improve the uniformity of electrostatic adsorption. In the case that the first DC voltage signal includes two sub-signals, the voltage values of the two sub-signals may be 1.5Kv and -1.5Kv respectively, see FIG. 2 for details.

The second power supply 303 is used to provide energy for ion implantation into the wafer, and the pulse voltage signal output by it can be transmitted to the electrostatic chuck 200 through the output interface 304. Based on the effect of the electrostatic chuck 200, a bias negative voltage can be coupled on the wafer surface , and then form an ion array Debye sheath lacking electrons on the surface of the wafer; since the plasma is positively charged, under the action of a bias electric field, positively charged ions will be accelerated into the wafer. As shown in FIG. 3 , it shows a waveform diagram of a pulse voltage signal output by the second power supply 303 . It should be understood that, in order to facilitate coupling to form a negative bias voltage, the pulse voltage signal is generally selected as a negative pulse signal.

Based on the existence of the output interface 304, the first DC voltage signal and the pulse voltage signal will be superimposed at the output interface 304, and the superimposed signal formed by the two has the functions of making the electrostatic chuck 200 absorb the wafer and providing energy for ion implantation into the wafer. . Under such a structural layout, the power supply assembly 300 of the embodiment of the present application can be connected to the electrostatic chuck 200 through an interface of the output interface 304, and the output interface 304 can output the first DC voltage signal, and can also output the pulse voltage signal, It is also possible to output a superimposed signal. Compared with the related art that needs to output voltage signals to the electrostatic chuck 200 through two power supply devices, and then superimpose them at the electrostatic chuck 200, the power supply assembly 300 of the embodiment of the present application outputs a voltage signal way is markedly different.

In related technologies, since both the high-voltage DC pulse power supply and the electrostatic adsorption power supply are set up as independent devices, the wiring of both is relatively complicated, and the lines will generate strong parasitic capacitance and inductance, and these parasitic inductance and capacitance will cause high-voltage DC pulse power supply The output pulse voltage signal is unstable, thereby causing a negative impact on the quality of the process.

Since the output interface 304 of the embodiment of the present application can output the first DC voltage signal, pulse voltage signal or superimposed signal, the power supply assembly 300 only needs to be connected to the electrostatic chuck 200 through a feeder line, and can be used in different application requirements. Next, one of the first DC voltage signal, the pulse voltage signal and the superposition signal can be selectively output to the electrostatic chuck 200 through this feeder line. In the related technology, both power supplies need to be connected to the electrostatic chuck through a feeder, so that the DC voltage signal and the pulse voltage signal can be transmitted to the electrostatic chuck respectively, and can be used to adsorb the wafer and provide ion implantation energy respectively.

It can be seen from the comparison that the power supply assembly 300 of the embodiment of the present application uses fewer feeders, which can undoubtedly simplify the wiring of the power supply assembly 300 of the embodiment of the present application, and the simplification of the wiring will reduce the number of feeders used by the power supply assembly 300 in the plasma immersion ion implantation. The parasitic capacitance and inductance when used in the device can weaken the influence of the parasitic inductance and capacitance on the pulse voltage signal, so that the pulse voltage signal output by the second power supply 303 tends to be stable. Specifically, the above-mentioned structural layout can prevent the rising edge and falling edge of the pulse voltage signal from becoming slow, and can also prevent the pulse voltage signal from overshooting and undershooting, thereby outputting a stable pulse voltage signal.

In the embodiment of the present application, the specific value of the pulse voltage signal is not limited. In an optional solution, the pulse voltage signal in the embodiment of the present application may be greater than or equal to -5Kv and less than or equal to -500v. Specifically, the pulse voltage signal can be selected as -5Kv, -500v or a value between the above ranges, see FIG. 3 for details.

Since the pulse voltage signal tends to be stable, this makes the superimposed signal tend to be stable, as can be seen in Figure 4 for details, and the waveform diagram of the superimposed signal is also more stable than the related technology. In this case, it is ensured that the superimposed signal can provide stable and reliable energy for implanting ions into the wafer, so as to achieve better process quality. It should be noted that, in the embodiment shown in FIG. 4 , the first DC voltage signal includes two sub-signals, so after the first DC voltage signal and the pulse voltage signal are superimposed, the superimposed signal includes two pulse sub-signals; the pulse sub-signal The waveform of the signal is affected by the sub-signals of the first DC voltage signal and the pulse voltage signal.

In order to facilitate the understanding of the working conditions of the superimposed signal in the embodiment of the present application, the superimposed signal waveform on the upper side in FIG. , when the first DC voltage signal is superimposed on the pulse voltage signal, the superimposed signal is essentially a pulse signal. At the peak of the waveform, the superimposed signal always outputs a DC voltage signal of 1.5Kv (that is, the voltage value of the first DC voltage signal), and at the valley of the waveform, the output voltage value of the superimposed signal is the first DC voltage The superimposed voltage value of the signal and the pulse voltage signal. After the superimposed signal is passed to the electrostatic chuck 200 through the output interface 304, no matter whether the superimposed signal is at a peak or a valley, because the electrostatic chuck 200 is always powered, the electrostatic chuck 200 can provide continuous electrostatic adsorption to the wafer; When the superimposed signal is at the trough, it can couple the bias negative voltage to the wafer surface through the electrostatic chuck 200 , and then drive ions to accelerate implantation into the wafer.

It should be noted that an input interface 310 may also be provided on the casing 305 of the embodiment of the present application, and both the first power supply 302 and the second power supply 303 are connected to the input interface 310, and the input interface 310 is used to connect to a three-phase AC power supply , to supply power to the first power source 302 and the second power source 303 . The input interface 310 is the main power supply port of the power supply assembly 300, and its input voltage is usually 208V, and can provide no less than 10Kv of power.

As can be seen from the above description, in the power supply assembly 300 of the plasma immersion ion implantation equipment disclosed in the embodiment of the present application, since the first power supply 302 and the second power supply 303 are integrated in the same housing 305, the two can share the same The output interface 304, so that the signal can be output through only one feeder. Compared with the scheme in which two power supplies are routed separately in the related art, the power supply assembly 300 in the embodiment of the present application can undoubtedly achieve the effect of simplifying the routing and reducing parasitic inductance and capacitance The production, thereby improving the quality of the process.

In an optional solution, as shown in FIG. 1 , the power supply assembly 300 of the embodiment of the present application may also include a control module 301, the control module 301 is arranged in the casing 305, and the control module 301 is connected to the first power supply 302 respectively. Connected to the second power supply 303 , the control module 301 is used to control the parameters of the first DC voltage signal output by the first power supply 302 and the parameters of the pulse voltage signal output by the second power supply 303 . Under this structural layout, the power supply assembly 300 is provided with only one control module 301, that is, the first power supply 302 and the second power supply 303 share one control module 301, compared with the related art where the two power supply devices are independently provided The way of controlling the module 301 simplifies the structure of the power supply assembly 300 of the embodiment of the present application, thereby improving the degree of integration, not only reducing the volume, but also reducing the processing cost.

The control module 301 can regulate the parameters of the first DC voltage signal by controlling the first power supply 302 , and the control module 301 can regulate the parameters of the pulse voltage signal by controlling the second power supply 303 . Specifically, the control module 301 can control the opening and closing of the first power supply 302 and the second power supply 303, that is, control the first power supply 302 to output or stop outputting the first DC voltage signal, and control the second power supply 303 to output or stop outputting the pulse voltage signal; at the same time, the control module 301 can also control parameters such as the intensity value and waveform of the voltage signals output by the first power supply 302 and the second power supply 303 . In the embodiment of the present application, the specific type of the control module 301 is not limited, and it can be PLC (Programmable Logic Controller, that is, a programmable logic controller), MCU (Microcontroller Unit, that is, a micro control unit), FPGA (Field Programmable Gate Array, that is, field programmable gate array), etc.

Further, as shown in FIG. 1 , the power supply assembly 300 of the embodiment of the present application may also include a communication interface 309, the communication interface 309 is installed on the housing 305, and the communication interface 309 is connected to the control module 301, and the control module 301 passes The communication interface 309 receives external commands. Under such setting, the control module 301 can receive external control commands through the communication interface 309, and the operator can send control commands to the control module 301 through the master control (such as an industrial computer, etc.). The communication interface 309 can be a RS232, RS485, EtherCat (Control Automation Technology, ie Ethernet control automation technology) communication conversion chip, or it can also be a terminal block, which can convert the control command into a signal that the control module 301 can receive level or corresponding data frame information.

In an optional solution, as shown in FIG. 1 , the power supply assembly 300 of the embodiment of the present application may also include a three-phase rectification module 308 disposed in the casing 305, and the first power supply 302 and the second power supply 303 are connected to the three-phase The three-phase rectification module 308 is connected, and the three-phase rectification module 308 is used to rectify the external input AC power into DC power and transmit it to the first power source 302 and the second power source 303 . It should be understood that the three-phase rectification module 308 can convert the three-phase AC power supply from AC power to DC power, and deliver the DC power to the first power source 302 and the second power source 303 . The three-phase rectification module 308 can be connected to the aforementioned input interface 310 .

Under such a structural layout, the power supply assembly 300 only needs to be equipped with a three-phase rectification module 308, that is, the first power supply 302 and the second power supply 303 share a three-phase rectification module 308, compared with the two power supplies in the related art All devices need to be independently configured with a three-phase rectifier module 308. The structure of the power supply assembly 300 in the embodiment of the present application is simplified, thereby improving the integration level, not only reducing the volume, but also reducing the processing cost.

In an optional solution, as shown in FIG. 1 , the power supply assembly 300 of the embodiment of the present application may also include a filter module 307 disposed in the casing 305, and the filter module 307 is connected between the first power supply 302 and the output interface 304 Between, the filter module 307 is used to attenuate the pulse voltage signal leading to the first power supply 302 . It should be understood that the filtering module 307 has the function of filtering out specific frequency signals. Since the filtering module 307 is located between the first power supply 302 and the output interface 304, it can filter out some pulses leaking to the line where the first power supply 302 is located. The voltage signal is used to attenuate the pulse voltage signal, so as to avoid affecting the normal use of the first power supply 302 . In the embodiment of the present application, the filtering module 307 can be selected as an RC (series resistance parallel capacitance) structure, an LC (series inductor parallel capacitance) structure, an RLC (series resistance series inductor parallel capacitance) structure and the like.

In an optional solution, as shown in FIG. 1 , the power supply assembly 300 of the embodiment of the present application may also include a DC blocking module 306 disposed in the casing 305, and the DC blocking module 306 is connected between the second power supply 303 and the output Between the interfaces 304 , the DC blocking module 306 is used to isolate the first DC voltage signal from passing to the second power source 303 . It should be understood that the DC blocking module 306 has the function of blocking DC traffic, which can allow pulse voltage signals to pass through; at the same time, since the DC blocking module 306 is located between the second power supply 303 and the output interface 304, it can block leakage To the first DC voltage signal on the line where the second power supply 303 is located, so as to prevent it from affecting the normal use of the second power supply 303 .

In combination with the aforementioned implementation of the power supply assembly 300 including the filter module 307, since the pulse voltage signal can pass through the DC blocking module 306, at this time, the filter module 307 can preset to filter out pulse voltage signals in a certain frequency range to avoid pulse voltage signals Leakage to the line where the first power supply 302 is located causes an impact.

In the related art, the filtering module and the DC blocking module are also set as independent devices, and the high voltage DC pulse power supply, the electrostatic adsorption power supply, the filtering module and the DC blocking module are all set outside the process chamber of the plasma immersion particle injection equipment Weekly, the traces between them are long and complex, which will significantly enhance the parasitic capacitance and inductance. In the power supply assembly 300 of the embodiment of the present application, the filtering module 307, the DC blocking module 306, the first power supply 302 and the second power supply 303 are all integrated together, and the connection between the first power supply 302 and the filtering module 307 The wires are effectively reduced, and the wiring between the second power supply 303 and the DC blocking module 306 is also effectively reduced. In this case, the overall internal wiring of the power supply assembly 300 in the embodiment of the present application can be reduced, thereby effectively reducing The generation of parasitic capacitance and inductance.

In order to enable the second power supply 303 to provide enough energy for ion implantation, as shown in FIG. Connect with the DC pulse module 303b, the DC pulse module 303b is connected with the output interface 304, the DC power supply module 303a is used to output the second DC voltage signal, and the DC pulse module is used to convert the second DC voltage signal into a pulse voltage signal .

Under such setting, the DC power supply module 303a is used to boost the DC power supplied by the front end to reach a preset voltage value; at the same time, the DC pulse module 303b is used to convert the boosted second DC voltage signal It is a pulse voltage signal with adjustable frequency and pulse width.

In the embodiment of the present application, the specific types of the DC power supply module 303a and the DC pulse module 303b are not limited. Optionally, the DC power supply module 303a can boost the supplied DC power up to 10Kv. Optionally, the DC power supply module 303a may be composed of two or more boost circuits connected in parallel. Optionally, the DC pulse module 303b can convert the voltage into a pulse voltage signal of -5Kv at most. Optionally, the DC pulse module 303b may be composed of a totem pole circuit composed of high-voltage GaN tubes connected in series and parallel.

In another embodiment, the DC power supply module 303a may include two power supply submodules and a relay, one power supply submodule is used for boosting and outputting a second DC voltage signal that can be adjusted to a maximum of 10Kv, and the other power supply submodule The group is used to step up and output the second DC voltage signal that can be adjusted up to -10Kv, and the relay is used to control and switch the access of the two sub-power modules.

At the same time, in the embodiment of the present application where the power supply assembly 300 includes the control module 301, the control module 301 can be connected to the first power supply 302, the DC power supply module 303a and the DC pulse module 303b respectively, and the control module The group 301 is also used to control the parameters of the second DC voltage signal output by the DC power supply module 303a, and control the parameters of the pulse voltage signal output by the DC pulse module 303b.

Under such a structural layout, the DC power supply module 303a and the DC pulse module 303b share a control module 301, which further simplifies the structure of the power supply assembly 300, improves the integration of the power supply assembly 300, and achieves volume reduction, The effect of reducing processing costs. In the embodiment where both the first power supply 302 and the second power supply 303 share the control module 301, it is equivalent to the first power supply 302, the DC power supply module 303a and the DC pulse module 303b sharing the same control module 301, In this way, the above-mentioned beneficial effects can be further enhanced.

The control module 301 can regulate the parameters of the second DC voltage signal by controlling the DC power supply module 303a, and the control module 301 can regulate the parameters of the pulse voltage signal by controlling the DC pulse module 303b. Specifically, the control module 301 can control the opening and closing of the DC power supply module 303a and the DC pulse module 303b. 303b outputs the pulse frequency and duty cycle required by the plasma immersion ion implantation process.

As shown in FIG. 5 , based on the foregoing power supply assembly 300 , the embodiment of the present application also provides a plasma immersion ion implantation equipment, which includes a process chamber 100 , an electrostatic chuck 200 and any of the foregoing power supply assembly 300 , so that This enables the plasma immersion ion implantation equipment to have the beneficial effects of the power supply assembly 300 in any of the foregoing solutions, and will not be repeated here. The electrostatic chuck 200 is set in the process chamber 100, and the power supply assembly 300 is connected to the electrostatic chuck 200 through the output interface 304. Based on the aforementioned beneficial effects of the power supply assembly 300, the first DC voltage signal, pulse Voltage signals and superimposed signals.

In the embodiment of the present application, the plasma immersion ion implantation equipment may further include an excitation power supply 400 , a matcher 500 , a coupling coil 600 , a dielectric cylinder 700 and a gas uniform component 800 . The dielectric cylinder 700 is disposed on the top of the process chamber 100 and is usually made of quartz, so as to prevent the plasma from corroding the dielectric cylinder 700 and introducing impurities. The coupling coil 600 is arranged around the outer circumference of the dielectric cylinder 700, and is connected to the excitation power supply 400 through the matching device 500. The excitation power supply 400 is used to load the excitation power to the coupling coil 600, so that the coupling coil 600 generates excitation energy, and passes through the dielectric cylinder 700 is coupled to the inside of the dielectric cartridge 700 to excite the process gas inside the dielectric cartridge 700 to form plasma P. The gas uniform component 800 is arranged on the top of the medium cylinder 700, which is connected with the gas source 900, and uniformly transports the process gas into the process chamber 100, so as to improve the process quality.

The plasma immersion ion implantation equipment of the embodiment of the present application may also include an implanted ion collection device 1000 and a current signal integration processing unit 1100, wherein the implanted ion collection device 1000 can be specifically selected as a Faraday cup, and its shape is similar to a round cup and is arranged on The peripheral side of the electrostatic chuck 200 . The current signal integration processing unit 1100 is used to calculate the ion implantation dose in real time. With the help of the implanted ion collection device 1000 and the current signal integration processing unit 1100 , the ion implantation dose can be accurately detected and obtained.

The plasma immersion ion implantation equipment of the embodiment of the present application can also use a vacuum system 1200, through which the gas in the process chamber 100 can be sucked to adjust the pressure state in the process chamber 100, and then adjust the pressure in the process chamber 100. At the same time, the vacuum system 1200 can also exhaust the gas in the process chamber 100 after the process is completed. Specifically, the vacuum system 1200 may include a vertical valve 1210 , a molecular pump 1220 and a dry pump 1230 .

Based on the aforementioned plasma immersion ion implantation equipment, an embodiment of the present application also provides a plasma immersion ion implantation method, which uses the aforementioned plasma immersion ion implantation equipment, as shown in FIG. 6 , the method includes:

Step S100 , transfer the wafer to be processed to the electrostatic chuck 200 , and control the first power supply 302 to output a first DC voltage signal, so that the wafer to be processed is adsorbed and fixed on the electrostatic chuck 200 .

After the wafer to be processed is transferred to the electrostatic chuck 200 in the process chamber 100, a starting command can be issued to the first power supply 302. In the embodiment of the present application, the power supply assembly 300 is integrated with the control module 301 , the adsorption command can be issued to the control module 301, and the control module 301 controls the first power supply 302 to start and output the set first DC voltage signal. At this time, the electrode part of the electrostatic chuck 200 is powered to make the electrostatic chuck The disc 200 has electrostatic adsorption capability, and then absorbs and fixes the wafer to be processed.

Step S200 , injecting a process gas into the process chamber 100 for ignition to form a plasma P.

In some optional embodiments, in the above step S100, after the wafer to be processed is absorbed and fixed on the electrostatic chuck 200, a back blowing gas is introduced between the electrostatic chuck 200 and the wafer to be processed ( For example, helium gas, etc.) is used to improve the uniformity of heat exchange between the electrostatic chuck 200 and the wafer to be processed, and the above-mentioned back blowing gas is, for example, helium gas. After the flow rate of the back blowing gas is stabilized, in the above step S200, a process gas (such as boron fluoride, etc.) is introduced into the process chamber 100; 400 to ignite the process gas to form plasma P.

Step S300 , controlling the second power supply 303 to output a pulse voltage signal and the output interface 304 to output a superposition signal, so that ions in the plasma P are implanted into the wafer to be processed.

After the ignition is stabilized, a starting command can be issued to the second power supply 303. In the implementation of the embodiment of the present application where the power supply assembly 300 is integrated with the control module 301, the command to provide ion implantation energy can be issued to the control module 301 , and the second power supply 303 is controlled by the control module 301 to start and output the set pulse voltage signal; The power supply module 303a outputs parameters such as voltage and power, and the control module 301 controls the DC pulse module 303b to set the output pulse frequency and duty cycle. Subsequently, the pulse voltage signal and the first DC voltage signal form a superimposed signal at the output interface 304, and the superimposed signal is transmitted to the electrostatic chuck 200, so that the electrostatic chuck 200 has the ability to absorb the wafer to be processed and provide ion implantation. The energy of the wafer to be processed, so that the plasma immersion ion implantation process can be smoothly implemented on the wafer to be processed.

After the process is completed, as shown in Figure 7, the plasma immersion ion implantation method also includes:

Step S400, controlling to turn off the second power supply 303;

Step S500, controlling to turn off the excitation power supply 400;

Step S600, stop feeding the process gas;

Step S700, stop feeding the back blowing gas;

Step S800, control to turn off the first power supply 302.

By stopping the flow of process gas and back blowing gas after turning off the second power supply 303 and the excitation power supply 400, the pressure in the chamber can be guaranteed to be stable, and by turning off the first power supply 302 at the end, it can be ensured that the wafer is always adsorbed and fixed on the electrostatic chuck 200 on.

The foregoing content summarizes the features of several embodiments, so that those skilled in the art can better understand aspects of the present disclosure. Those skilled in the art should appreciate that they can readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments described herein. Those skilled in the art should also understand that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions and alterations herein without departing from the spirit and scope of the present disclosure.

100: process chamber 200: electrostatic chuck 300: Power components 301: Control module 302: The first power supply 303: second power supply 303a: DC power module 303b: DC pulse module 304: output interface 305: shell 306: DC blocking module 307:Filter module 308:Three-phase rectifier module 309: communication interface 310: input interface 400: excitation power supply 500: Matcher 600: Coupling coil 700: medium cylinder 800: Evening parts 900: gas source 1000: Implantation ion collection device 1100: current signal integral processing unit 1200: vacuum system 1210: vertical valve 1220:molecular pump 1230: dry pump P: plasma

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying drawings. It should be noted that, in accordance with the standard practice in the industry, various components are not drawn to scale. In fact, the dimensions of the various components may be arbitrarily increased or decreased for clarity of discussion. FIG. 1 is a schematic structural diagram of a power supply assembly disclosed in an embodiment of the present application; FIG. 2 is a waveform diagram of the first DC voltage signal output by the first power supply disclosed in the embodiment of the present application; FIG. 3 is a waveform diagram of a pulse voltage signal output by a second power supply disclosed in an embodiment of the present application; FIG. 4 is a waveform diagram of a superimposed signal disclosed in an embodiment of the present application; FIG. 5 is a schematic structural diagram of a plasma immersion ion implantation device disclosed in an embodiment of the present application; FIG. 6 is a flowchart of a plasma immersion ion implantation method disclosed in an embodiment of the present application; FIG. 7 is a flowchart of the plasma immersion ion implantation method disclosed in the embodiment of the present application after the process is completed.

301: Control module

302: The first power supply

303: second power supply

303a: DC power module

303b: DC pulse module

304: output interface

305: shell

306: DC blocking module

307:Filter module

308:Three-phase rectifier module

309: communication interface

310: input interface

Claims (10)

A power supply assembly of plasma immersion ion implantation equipment, the power supply assembly includes a casing, a first power supply, a second power supply and an output interface, wherein: The first power supply and the second power supply are integrated in the casing, and the output interface is arranged on the casing; the first power supply is connected to the output interface, and the second power supply is connected to the output interface; The first power supply is used to output a first DC voltage signal, the second power supply is used to output a pulse voltage signal, and the output interface is used to output the first DC voltage signal, the pulse voltage signal or a superposition signal, and the superposition The signal is formed by superimposing the first DC voltage signal and the pulse voltage signal. The power supply assembly as described in claim 1, wherein the power supply assembly further includes a control module, the control module is arranged in the casing, the control module is respectively connected to the first power supply and the second power supply, and the control module The module is used to control the parameters of the first DC voltage signal output by the first power supply and the parameters of the pulse voltage signal output by the second power supply. The power supply assembly as claimed in item 1, wherein the power supply assembly further includes a filter module, the filter module is connected between the first power supply and the output interface, and the filter module is used to attenuate the This pulse voltage signal of the power supply. The power supply assembly as described in claim 1, wherein the power supply assembly further includes a DC blocking module, the DC blocking module is connected between the second power supply and the output interface, and the DC blocking module is used to isolate the first A DC voltage signal leads to the second power source. The power supply assembly as described in claim 1, wherein the power supply assembly further includes a three-phase rectification module, the first power supply and the second power supply are connected to the three-phase rectification module, and the three-phase rectification module is used for rectifying the externally input alternating current into direct current and sending it to the first power supply and the second power supply. The power supply assembly as described in claim 2, wherein the power supply assembly further includes a communication interface, the communication interface is installed on the casing, and the communication interface is connected to the control module, and the control module receives the External instructions. The power supply assembly according to any one of claims 1 to 6, wherein the second power supply includes a DC power supply module and a DC pulse module, the DC power supply module is connected to the DC pulse module, and the DC pulse module The module is connected with the output interface, the DC power supply module is used to output a second DC voltage signal, and the DC pulse module is used to convert the second DC voltage signal into the pulse voltage signal. The power supply assembly according to claim 1, wherein the voltage value of the first DC voltage signal is greater than or equal to -1.5Kv and less than or equal to 1.5Kv, and the voltage value of the pulse voltage signal is greater than or equal to -5Kv and less than or equal to -500v. A plasma immersion ion implantation equipment, which includes a process chamber, an electrostatic chuck, and the power supply assembly described in any one of Claims 1 to 8, the electrostatic chuck is arranged in the process chamber, and the power supply assembly passes through The output interface is connected with the electrostatic chuck. A plasma immersion ion implantation method, wherein the plasma immersion ion implantation equipment described in Claim 9 is used; the method includes: transmitting a wafer to be processed to the electrostatic chuck, controlling the first power supply to output the first DC voltage signal, so that the wafer to be processed is adsorbed and fixed on the electrostatic chuck; Introducing a process gas into the process chamber for ignition to form a plasma; The second power supply is controlled to output the pulse voltage signal and the superposition signal is output through the output interface, so that ions in the plasma are implanted into the wafer to be processed.

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