TWI823533B - Power supply assembly, plasma immersion ion implantation device and method - Google Patents

Abstract

A power supply assembly, a plasma immersion ion implantation device and a method. The power supply assembly comprises a shell, a first power supply, a second power supply and an output interface, wherein the first power supply and the second power supply are integrated in the shell, and the output interface is arranged on the shell; The first power supply is connected with the output interface, and the second power supply is connected with the output interface; The first power supply is used to output the first DC voltage signal, the second power supply is used to output the pulse voltage signal, and the output interface is used to output the first DC voltage signal, the pulse voltage signal or the superimposed signal. The superimposed signal is formed by the superposition of the first DC voltage signal and the pulse voltage signal.

Description

Power supply components, plasma immersion ion implantation equipment and methods

The present application relates to the field of semiconductor manufacturing technology, and in particular to a power supply component, plasma immersion ion implantation equipment and method.

In the field of semiconductor manufacturing technology, the plasma immersion ion implantation process is to immerse the wafer in plasma and inject ions in the plasma as dopants into the wafer to change the characteristics of the surface material of the wafer. Among them, ions are specifically injected into the wafer under the action of a bias voltage, and the bias voltage needs to be generated by a high-voltage DC pulse power supply.

At the same time, the plasma immersion implantation equipment includes an electrostatic chuck installed in the chamber. The electrostatic chuck is used to apply electrostatic adsorption to the wafer for reliable fixation. Among them, the electrostatic adsorption effect of the electrostatic chuck needs to be generated by an electrostatic adsorption power supply. Since the high-voltage DC pulse power supply and the electrostatic adsorption power supply are both set up as independent devices, the wiring of both is relatively complex. These lines will produce strong parasitic inductance and capacitance. The parasitic inductance and capacitance will cause the bias voltage output by the high-voltage DC pulse power supply. unstable, thus causing a negative impact on process quality.

This application discloses a power supply component, plasma immersion ion implantation equipment and methods of use thereof, in order to solve the problem of strong parasitic inductance caused by multiple power supply structure layouts in related technologies. problems that affect process quality.

In order to solve the above problems, this application adopts the following technical solutions:

In a first aspect, the present application provides a power supply assembly for plasma immersion ion implantation equipment. The power supply assembly includes a housing, a first power supply, a second power supply and an output interface, wherein: the first power supply and the second power supply are integrally provided in In the housing, the output interface is provided on the housing; the first power supply is connected to the output interface, and the second power supply is connected to the output interface; the first power supply is used to output a first DC voltage signal, and the second The power supply is used to output a pulse voltage signal, and the output interface is used to output the first DC voltage signal, the pulse voltage signal or a superimposed signal. The superimposed signal is formed by superimposing the first DC voltage signal and the pulse voltage signal.

In a second aspect, the present application provides a plasma immersion ion implantation equipment, which includes a process chamber, an electrostatic chuck, and the power supply component described in the first aspect of the present application. The electrostatic chuck is disposed in the process chamber, and the power supply component Connect to the electrostatic chuck through the output interface.

In a third aspect, the present application provides a plasma immersion ion implantation method, which adopts the plasma immersion ion implantation equipment described in the second aspect of the present application; the method includes: transferring the wafer to be processed to the electrostatic chuck, and controlling The first power supply outputs the first DC voltage signal so that the wafer to be processed is adsorbed and fixed on the electrostatic chuck; the process gas is introduced into the process chamber to initiate ignition to form plasma; and the third power supply is controlled to be adsorbed and fixed on the electrostatic chuck. The two power supplies output the pulse voltage signal and the output interface outputs the superimposed signal, so that the ions in the plasma are implanted into the wafer to be processed.

The technical solution adopted in this application can achieve the following beneficial effects: In the power supply assembly of the plasma immersion ion implantation equipment disclosed in this application, since the first power supply and the second power supply are integrated in the same housing, they can share the same power supply. An output interface allows the signal to be output through only one feeder. Compared with the solution of two power supplies being routed separately in the related art, the power supply component of the present application can undoubtedly achieve the effect of simplifying the wiring and reduce the generation of parasitic inductance and capacitance. This further improves the quality of the process.

100: Process chamber

200:Electrostatic chuck

300:Power supply components

301:Control module

302:First power supply

303: Second power supply

303a: DC power module

303b: DC pulse module

304:Output interface

305: Shell

306: DC blocking module

307: Filter module

308: Three-phase rectifier module

309: Communication interface

310: Input interface

400: Excitation power supply

500: Matcher

600: Coupling coil

700:Media cartridge

800: Air equalization components

900:Air source

1000:Implanted ion collection device

1100: Current signal integration processing unit

1200: Vacuum system

1210:Vertical valve

1220: Molecular pump

1230: Dry pump

P:Plasma

The present disclosure is best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that in accordance with standard practice in the industry, the various components are not drawn to scale. In fact, the dimensions of the various components may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 is a schematic structural diagram of a power supply component disclosed in an embodiment of the present application; FIG. 2 is a waveform diagram of a first DC voltage signal output by the first power supply disclosed in an embodiment of the present application; FIG. 3 is a second power supply disclosed in an embodiment of the present application. Waveform diagram of the output pulse voltage signal; Figure 4 is a waveform diagram of the superimposed signal disclosed in the embodiment of the present application; Figure 5 is a schematic structural diagram of the plasma immersion ion implantation equipment disclosed in the embodiment of the present application; Figure 6 is a schematic diagram of the plasma immersion ion implantation equipment disclosed in the embodiment of the present application; A flow chart of the disclosed plasma immersion ion implantation method; FIG. 7 is a flow chart of the plasma immersion ion implantation method disclosed in the embodiment of the present application after completing the process.

The following disclosure provides many different embodiments or examples of different means for implementing the disclosure. Specific examples of components and configurations are described below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, the following description in which a first member is formed over or on a second member may include embodiments in which the first member and the second member are formed in direct contact, and may also include embodiments in which additional members can be formed between the first component and the second component time, so that the first component and the second component may not be in direct contact. Additionally, the present disclosure may repeat reference numbers and/or letters in various instances. This repetition is for simplicity and clarity and does not inherently indicate a relationship between the various embodiments and/or configurations discussed.

In addition, for ease of description, spatially relative terms such as “below,” “below,” “lower,” “above,” “upper,” and the like may be used herein to describe one component or component in relation to another(s). The relationship between components or components, as illustrated in the figure. Spatially relative terms are intended to cover different orientations of the device in use or operation other than the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

差。再者，如本文中使用，術語「大約」通常意謂在一給定值或範圍之10%、5%、1%或0.5%內。替代地，術語「大約」意謂在由此項技術之一般技術者考量時處於平均值之一可接受標準

差內。除在操作/工作實例中以外，或除非以其他方式明確指定，否則諸如針對本文中揭露之材料之數量、時間之持續時間、溫度、操作條件、數量之比率及其類似者之全部數值範圍、數量、值及百分比應被理解為在全部例項中由術語「大約」修飾。相應地，除非相反地指示，否則本揭露及隨附發明申請專利範圍中陳述之數值參數係可根據需要變化之近似值。至少，應至少鑑於所報告有效數位之數目且藉由應用普通捨入技術解釋各數值參數。範圍可在本文中表達為從一個端點至另一端點或在兩個端點之間。本文中揭露之全部範圍包含端點，除非另有指定。 Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the disclosure are approximations, the values stated in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contains certain deviations necessarily resulting from the standard deviation found in their respective testing measurements.

Difference. Furthermore, as used herein, the term "about" generally means within 10%, 5%, 1% or 0.5% of a given value or range. Alternatively, the term "approximately" means an acceptable standard of average when considered by one of ordinary skill in the art.

Within the difference. Except in operating/working examples, or unless otherwise expressly specified, all numerical ranges such as amounts, durations of time, temperatures, operating conditions, ratios of amounts, and the like for materials disclosed herein, Quantities, values and percentages should be understood to be modified in all instances by the term "about". Accordingly, unless indicated to the contrary, the numerical parameters set forth in the patent claims of this disclosure and accompanying invention claims are approximations that may vary as necessary. At a minimum, each numerical parameter should be interpreted in light of the number of reported significant digits and by applying ordinary rounding techniques. Ranges may be expressed herein as from one endpoint to the other endpoint or between two endpoints. All ranges disclosed herein include endpoints unless otherwise specified.

The technical solutions disclosed in various embodiments of the present application will be described in detail below with reference to the accompanying drawings.

In order to solve the problem in the related art that the layout of multiple power supply structures will produce strong parasitic inductance and capacitance and affect the quality of the process, embodiments of the present application provide a power supply component of a plasma immersion ion implantation equipment.

As shown in FIGS. 1 to 4 , the power supply assembly 300 in the embodiment of the present application includes a housing 305 , a first power supply 302 , a second power supply 303 and an output interface 304 .

Among them, the housing 305 is the basic component of the power supply assembly 300, which can provide an installation foundation for other components of the power supply assembly 300, and can also play a certain protective role. Specifically, the first power supply 302 and the second power supply 303 are integrated and provided in the housing 305 , and the output interface 304 is provided on the housing 305 .

The first power supply 302 is used to output a first DC voltage signal, and the second power supply 303 is used to output a pulse voltage signal; the first power supply 302 is connected to the output interface 304, and the second power supply 303 is connected to the output interface 304; the output interface 304 is used to output A first DC voltage signal, a pulse voltage signal or a superimposed signal. The superimposed signal is formed by superimposing the first DC voltage signal and the pulse voltage signal.

Specifically, the first power supply 302 is used to realize the adsorption and fixation function of the electrostatic chuck 200, and the first DC voltage signal output by it can be transmitted to the electrostatic chuck 200 through the output interface 304, and then to the electrode part in the electrostatic chuck 200. When power is supplied, an electric field will be generated around the electrode part. The molecules inside the wafer will be polarized under the action of the electric field and generate polarized charges. An electrostatic force will be generated between the polarized charges and the corresponding electric field. The electrostatic force will make the wafer effectively It is adsorbed and fixed on the electrostatic chuck 200.

As shown in Figure 2, it shows a first direct current output by a first power supply 302. The waveform diagram of the pressure signal. In an optional solution, the voltage value of the first DC voltage signal can be greater than or equal to -1.5Kv and less than or equal to 1.5Kv, that is, the voltage value output by the first power supply 302 is within the range of -1.5Kv to 1.5Kv. This can not only ensure that the electrostatic chuck 200 generates effective electrostatic adsorption force, but also avoid damaging the electrostatic chuck 200 due to voltage overload.

In the embodiment of the present application, the specific value of the first DC voltage signal is not limited. In an optional solution, the voltage value of the first DC voltage signal in the embodiment of the present application may be greater than or equal to -1.5Kv and less than or equal to 1.5Kv. Specifically, the voltage value of the first DC voltage signal may be 1.5Kv (see the waveform on the upper side of the t-axis in Figure 2), or the voltage value of the first DC voltage signal may be -1.5Kv (see the waveform on the lower side of the t-axis in Figure 2 side waveform). In another embodiment, the first DC voltage signal includes two sub-signals. In this case, after the first DC voltage signal is transmitted to the electrostatic chuck 200, the two sub-signals can be used to detect Different areas (such as inner and outer rings) generate electrostatic adsorption to improve the uniformity of electrostatic adsorption. In the case where the first DC voltage signal includes two sub-signals, the voltage values of the two sub-signals may be 1.5Kv and -1.5Kv respectively. See Figure 2 for details.

The second power supply 303 is used to provide energy for ion implantation into the wafer, and its output pulse voltage signal can be transmitted to the electrostatic chuck 200 through the output interface 304. Based on the function of the electrostatic chuck 200, a negative bias voltage can be coupled to the wafer surface. , and then form an ion array Debye sheath lacking electrons on the wafer surface; because the plasma is positively charged, positively charged ions will be accelerated and injected into the wafer under the action of the bias electric field. As shown in FIG. 3 , it shows a waveform diagram of a pulse voltage signal output by the second power supply 303 . It should be understood that in order to facilitate coupling to form a negative bias voltage, the pulse voltage signal is usually selected as a negative pulse signal.

Based on the existence of the output interface 304, the first DC voltage signal and the pulse voltage signal will be superimposed at the output interface 304. The superimposed signal formed by the two has the ability to make the electrostatic chuck 200 has the function of adsorbing the wafer and providing energy for ion implantation into the wafer. Under such a structural layout, the power supply component 300 of the embodiment of the present application can be connected to the electrostatic chuck 200 through the output interface 304. The output interface 304 can output a first DC voltage signal and a pulse voltage signal. It can also output a superimposed signal. Compared with the method in the related art that requires two power supply devices to respectively output voltage signals to the electrostatic chuck 200 and then superimpose them at the electrostatic chuck 200, the power supply component 300 of the embodiment of the present application outputs a voltage signal. The way is obviously different.

In related technologies, since the high-voltage DC pulse power supply and the electrostatic adsorption power supply are both set up as independent devices, the wiring of both is relatively complex, and the lines will produce strong parasitic capacitance and inductance. These parasitic inductances and capacitances will cause the high-voltage DC pulse power supply to The output pulse voltage signal is unstable, which has a negative impact on the quality of the process.

Since the output interface 304 of the embodiment of the present application can output the first DC voltage signal, pulse voltage signal or superposition signal, the power supply component 300 only needs to be connected to the electrostatic chuck 200 through one feeder, which can be used in different application requirements. Under this condition, one of the first DC voltage signal, the pulse voltage signal and the superposition signal can be selectively output to the electrostatic chuck 200 through this feeder line. In related technologies, both power supplies need to be connected to the electrostatic chuck through feeders, so that the DC voltage signal and the pulse voltage signal can be transmitted to the electrostatic chuck respectively, and used to absorb the wafer and provide ion implantation energy respectively.

It can be seen from the comparison that the power supply component 300 of the embodiment of the present application uses fewer feeders, which can undoubtedly simplify the wiring of the power supply component 300 of the embodiment of the present application. The simplification of the wiring will reduce the power supply component 300 during plasma immersion ion implantation. The parasitic capacitance and inductance used in the device can weaken the influence of the parasitic inductance and capacitance on the pulse voltage signal, thereby making the pulse voltage signal output by the second power supply 303 tend to be stable. Specifically, the above structural layout can prevent the rising and falling edges of the pulse voltage signal from slowing down, and can also prevent the pulse voltage signal from appearing. Overshoot and undershoot, and then output a stable pulse voltage signal.

In the embodiment of the present application, the specific value of the pulse voltage signal is not limited. In an optional solution, the pulse voltage signal in the embodiment of the present application may be greater than or equal to -5Kv and less than or equal to -500v. Specifically, the pulse voltage signal can be selected as -5Kv, -500v or a value between the above ranges. See Figure 3 for details.

Since the pulse voltage signal tends to be stable, the superimposed signal becomes stable. For details, see Figure 4. The waveform diagram of the superimposed signal is also more stable than related technologies. In this case, it is ensured that the superimposed signal can provide stable and reliable energy for ion implantation into the wafer to achieve better process quality. It should be noted that in the embodiment shown in Figure 4, the first DC voltage signal includes two sub-signals, so after the first DC voltage signal and the pulse voltage signal are superimposed, the superimposed signal includes two pulse sub-signals; the pulse sub-signal The waveform of the signal is affected by the sub-signals of the first DC voltage signal and the pulse voltage signal.

In order to facilitate understanding of the working conditions of the superimposed signal in the embodiment of the present application, the superimposed signal waveform located on the upper side in Figure 4 is used as an example for explanation: Since the pulse voltage signal is a discrete signal, its waveform appears discontinuous and periodic, so , when the first DC voltage signal and the pulse voltage signal are superimposed, the superimposed signal is essentially a pulse signal. At the peak of the waveform, the superimposed signal always outputs a DC voltage signal of 1.5Kv (that is, the voltage value of the first DC voltage signal), and at the valley of the waveform, the voltage value of the output superimposed signal is the first DC voltage. The superimposed voltage value of the signal and the pulse voltage signal. After the superimposed signal is passed to the electrostatic chuck 200 through the output interface 304, no matter the superimposed signal is at the peak or the trough, because the electrostatic chuck 200 is always powered, the electrostatic chuck 200 can provide continuous electrostatic adsorption force to the wafer; When the superimposed signal is at the trough, it can couple the bias negative voltage to the wafer surface through the electrostatic chuck 200, thereby driving ions to accelerate into the wafer.

It should be noted that the housing 305 of the embodiment of the present application can also be provided with an input interface 310. The first power supply 302 and the second power supply 303 are both connected to the input interface 310. The input interface 310 is used to connect to a three-phase AC power supply. , to provide power to the first power supply 302 and the second power supply 303 . The input interface 310 is the main power supply port of the power supply component 300. Its input voltage is usually 208V and can provide power of no less than 10Kv.

As can be seen from the above description, in the power supply assembly 300 of the plasma immersion ion implantation equipment disclosed in the embodiment of the present application, since the first power supply 302 and the second power supply 303 are integrated in the same housing 305, they can share the same The output interface 304 can output signals through only one feeder. Compared with the solution of two power supplies being wired separately in the related art, the power supply assembly 300 of the embodiment of the present application can undoubtedly achieve the effect of simplifying the wiring and reducing parasitic inductance and capacitance. production, thereby improving the quality of the process.

In an optional solution, as shown in Figure 1, the power supply assembly 300 of the embodiment of the present application may also include a control module 301. The control module 301 is disposed in the housing 305. The control module 301 is connected to the first power supply 302 respectively. Connected to the second power supply 303, the control module 301 is used to control the parameters of the first DC voltage signal output by the first power supply 302 and the parameters of the pulse voltage signal output by the second power supply 303. In this structural layout, the power supply assembly 300 is provided with only one control module 301, that is, the first power supply 302 and the second power supply 303 share one control module 301. Compared with the related art, the two power supply devices are independently provided. By controlling the module 301, the structure of the power supply component 300 in the embodiment of the present application is simplified, thereby improving the integration level, not only reducing the volume, but also reducing the processing cost.

The control module 301 can control the parameters of the first DC voltage signal by controlling the first power supply 302 , and the control module 301 can control the parameters of the pulse voltage signal by controlling the second power supply 303 . Specifically, the control module 301 can control the first power supply 302 and the second The power supply 303 is turned on and off, that is, the first power supply 302 is controlled to output or stop outputting the first DC voltage signal, and the second power supply 303 is controlled to output or stop outputting the pulse voltage signal; at the same time, the control module 301 can also control the first power supply 302 and The intensity value, waveform and other parameters of the voltage signal output by the second power supply 303. In the embodiment of the present application, the specific type of the control module 301 is not limited, and it can be a PLC (Programmable Logic Controller, i.e. a programmable logic controller), an MCU (Microcontroller Unit, i.e. a micro control unit), or an FPGA (Field Programmable). Gate Array, that is, field programmable gate array), etc.

Further, as shown in Figure 1, the power supply assembly 300 of the embodiment of the present application can also include a communication interface 309. The communication interface 309 is installed on the housing 305, and the communication interface 309 is connected to the control module 301. The control module 301 passes The communication interface 309 receives external instructions. Under such a setting, the control module 301 can receive external control instructions through the communication interface 309, and the operator can issue control instructions to the control module 301 through the master control (such as an industrial computer, etc.). The communication interface 309 can be an RS232, RS485, EtherCat (Control Automation Technology) communication conversion chip, or it can also be a wiring terminal block, which can convert control instructions into signals that the control module 301 can receive. level or corresponding data frame information.

In an optional solution, as shown in Figure 1, the power supply component 300 of the embodiment of the present application may also include a three-phase rectifier module 308 disposed in the housing 305. The first power supply 302 and the second power supply 303 are connected to the three-phase rectifier module 308. The three-phase rectifier module 308 is connected, and the three-phase rectifier module 308 is used to rectify the externally input alternating current into direct current and deliver it to the first power supply 302 and the second power supply 303 . It should be understood that the three-phase rectifier module 308 can convert three-phase AC power from AC power to DC power, and deliver the DC power to the first power supply 302 and the second power supply 303 . The three-phase rectifier module 308 can be connected to the aforementioned input interface 310.

Under this structural layout, the power supply component 300 only needs to be provided with one three-phase rectification module 308, that is, the first power supply 302 and the second power supply 303 share a three-phase rectification module 308. Compared with two power supplies in the related art, Each device needs to be configured with a three-phase rectifier module 308 independently. The structure of the power supply component 300 in the embodiment of the present application is simplified, thereby improving the integration level, not only reducing the volume, but also reducing the processing cost.

In an optional solution, as shown in Figure 1, the power supply component 300 of the embodiment of the present application may also include a filter module 307 disposed in the housing 305. The filter module 307 is connected between the first power supply 302 and the output interface 304. The filter module 307 is used to attenuate the pulse voltage signal leading to the first power supply 302 . It should be understood that the filter module 307 has the function of filtering out specific frequency signals. Since the filter module 307 is located between the first power supply 302 and the output interface 304, it can filter out part of the pulses leaked to the line where the first power supply 302 is located. voltage signal to attenuate the pulse voltage signal to avoid affecting the normal use of the first power supply 302 . In the embodiment of the present application, the filter module 307 can be selected from an RC (series resistor and parallel capacitor) structure, an LC (series inductor and parallel capacitor) structure, an RLC (series resistor, series inductor and capacitor) structure, etc.

In an optional solution, as shown in Figure 1, the power supply assembly 300 of the embodiment of the present application may also include a DC blocking module 306 disposed in the housing 305. The DC blocking module 306 is connected between the second power supply 303 and the output. Between the interfaces 304, the DC blocking module 306 is used to isolate the first DC voltage signal from leading to the second power supply 303. It should be understood that the DC blocking module 306 has the function of blocking DC traffic, which can allow pulse voltage signals to pass; at the same time, because the DC blocking module 306 is located between the second power supply 303 and the output interface 304, it can block leakage. to the first DC voltage signal on the line where the second power supply 303 is located to prevent it from affecting the normal use of the second power supply 303 .

Combined with the aforementioned embodiment in which the power supply component 300 includes the filter module 307, since the pulse voltage signal can pass through the DC blocking module 306, at this time, the filter module 307 can be preset to filter The pulse voltage signal within a certain frequency range is dropped to prevent the pulse voltage signal from leaking to the line where the first power supply 302 is located and causing an impact.

In related technologies, the filter module and the DC blocking module are also set as independent devices. The high-voltage DC pulse power supply, the electrostatic adsorption power supply, the filter module and the DC blocking module are all set outside the process chamber of the plasma immersion ion implantation equipment. Weekly, the traces between them are long and complex, which will significantly increase the parasitic capacitance and inductance. In the power supply assembly 300 of the embodiment of the present application, the filter module 307, the DC blocking module 306, the first power supply 302 and the second power supply 303 are all integrated together, and the path between the first power supply 302 and the filter module 307 is The wiring is effectively reduced, and the wiring between the second power supply 303 and the DC blocking module 306 is also effectively reduced. In this case, the overall internal wiring of the power supply assembly 300 of the embodiment of the present application can be reduced, thereby effectively reducing The generation of parasitic capacitance and inductance.

In order to enable the second power supply 303 to provide sufficient energy for ion implantation, as shown in Figure 1, the second power supply 303 in the embodiment of the present application may include a DC power supply module 303a and a DC pulse module 303b. The DC power supply module 303a Connected to the DC pulse module 303b, the DC pulse module 303b is connected to the output interface 304, the DC power module 303a is used to output the second DC voltage signal, and the DC pulse module is used to convert the second DC voltage signal into a pulse voltage signal. .

Under such settings, the DC power module 303a is used to boost the DC power supplied by the front end to reach a preset voltage value; at the same time, the DC pulse module 303b is used to convert the boosted second DC voltage signal. It is a pulse voltage signal with adjustable frequency and pulse width.

In the embodiment of the present application, the specific types of the DC power module 303a and the DC pulse module 303b are not limited. Optionally, the DC power module 303a can boost the supplied DC power to a maximum of 10Kv. Optionally, the DC power module 303a can be powered by dual or multiple Boost voltages. Roads are connected in parallel. Optionally, the DC pulse module 303b can convert the voltage into a pulse voltage signal of -5Kv at maximum. Alternatively, the DC pulse module 303b may be composed of a totem pole circuit composed of high-voltage GaN tubes connected in series and parallel.

In other embodiments, the DC power module 303a may include two power sub-modules and relays. One power sub-module is used to boost and output a second DC voltage signal that can be adjusted to a maximum of 10Kv. The other power sub-module is The group is used to boost and output a second DC voltage signal that can be adjusted to a maximum of -10Kv, and the relay is used to control and switch the access of the two sub-power modules.

At the same time, in the embodiment of the present application in which the power supply component 300 includes the control module 301, the control module 301 can be connected to the first power supply 302, the DC power supply module 303a and the DC pulse module 303b respectively. The group 301 is also used to control the parameters of the second DC voltage signal output by the DC power module 303a, and control the parameters of the pulse voltage signal output by the DC pulse module 303b.

Under this structural layout, the DC power module 303a and the DC pulse module 303b share a control module 301, which can further simplify the structure of the power component 300, improve the integration level of the power component 300, and achieve reduction in volume, The effect of reducing processing costs. In an embodiment in which both the first power supply 302 and the second power supply 303 share the control module 301, it is equivalent to the first power supply 302, the DC power supply module 303a and the DC pulse module 303b sharing the same control module 301. This can further enhance the above beneficial effects.

The control module 301 can control the parameters of the second DC voltage signal by controlling the DC power module 303a, and the control module 301 can control the parameters of the pulse voltage signal by controlling the DC pulse module 303b. Specifically, the control module 301 can control the opening and closing of the DC power module 303a and the DC pulse module 303b. At the same time, the control module 301 can also control the regulation amplitude of the voltage boost of the DC power module 303a, and control the DC pulse module. 303b output, etc. The pulse frequency and duty cycle required for the plasma immersion ion implantation process.

As shown in Figure 5, based on the aforementioned power supply component 300, an embodiment of the present application also provides a plasma immersion ion implantation equipment, which includes a process chamber 100, an electrostatic chuck 200, and the power supply component 300 of any of the foregoing solutions. In this way, This makes the plasma immersion ion implantation equipment possess the beneficial effects of the power supply assembly 300 in any of the foregoing solutions, which will not be described again here. The electrostatic chuck 200 is disposed in the process chamber 100. The power supply component 300 is connected to the electrostatic chuck 200 through the output interface 304. Based on the aforementioned beneficial effects of the power supply component 300, the first DC voltage signal and pulse can be applied to the electrostatic chuck 200. voltage signal and superimposed signal.

In the embodiment of the present application, the plasma immersion ion implantation equipment may also include an excitation power supply 400, a matching device 500, a coupling coil 600, a dielectric cylinder 700 and a gas uniformity component 800. The dielectric cylinder 700 is disposed on the top of the process chamber 100 and is usually made of quartz. This can prevent plasma from corroding the dielectric cylinder 700 and introducing impurities. The coupling coil 600 is arranged around the periphery of the dielectric cylinder 700 and is connected to the excitation power supply 400 through the matching device 500. The excitation power supply 400 is used to load the excitation power into the coupling coil 600, so that the coupling coil 600 generates excitation energy and passes through the dielectric cylinder. 700 is coupled to the interior of the dielectric cylinder 700 to excite the process gas inside the dielectric cylinder 700 to form a plasma P. The gas equalizing component 800 is disposed on the top of the medium cylinder 700, is connected to the gas source 900, and evenly transports the process gas into the process chamber 100 to improve process quality.

The plasma immersion ion implantation equipment of the embodiment of the present application may also include an implanted ion collection device 1000 and a current signal integration processing unit 1100, wherein the implanted ion collection device 1000 can be specifically selected as a Faraday cup, which is shaped like a round cup and is disposed in The peripheral side of the electrostatic chuck 200 . The current signal integration processing unit 1100 is used to calculate the ion implantation dose in real time. With the help of the implanted ion collection device 1000 and the current signal integration processing unit 1100, the ion implantation dose can be accurately detected and obtained.

The plasma immersion ion implantation equipment of the embodiment of the present application can also be equipped with a vacuum system 1200. The vacuum system 1200 can suck the gas in the process chamber 100 to adjust the pressure state in the process chamber 100, thereby regulating the pressure in the process chamber 100. The process environment; at the same time, the vacuum system 1200 can also discharge the gas in the process chamber 100 after the process is completed. Specifically, the vacuum system 1200 may include a vertical valve 1210, a molecular pump 1220, and a dry pump 1230.

Based on the aforementioned plasma immersion ion implantation equipment, embodiments of the present application also provide a plasma immersion ion implantation method, which uses the aforementioned plasma immersion ion implantation equipment. As shown in Figure 6, the method includes:

Step S100: Transfer the wafer to be processed to the electrostatic chuck 200, and control the first power supply 302 to output a first DC voltage signal so that the wafer to be processed is adsorbed and fixed on the electrostatic chuck 200.

After the wafer to be processed is transferred to the electrostatic chuck 200 in the process chamber 100, a start command can be issued to the first power supply 302. In the embodiment of the present application, the power supply component 300 is integrated with the control module 301. , an adsorption command can be issued to the control module 301, and the control module 301 controls the first power supply 302 to start and output the set first DC voltage signal. At this time, the electrode part of the electrostatic chuck 200 is powered and causes the electrostatic chuck to The disc 200 has electrostatic adsorption ability, thereby adsorbing and fixing the wafer to be processed.

Step S200: Inject the process gas into the process chamber 100 to initiate ignition to form plasma P.

In some optional embodiments, in the above step S100, after the wafer to be processed is adsorbed and fixed on the electrostatic chuck 200, back blow gas is passed between the electrostatic chuck 200 and the wafer to be processed ( For example, helium gas, etc.) is used to improve the uniformity of heat exchange between the electrostatic chuck 200 and the wafer to be processed. The back-blow gas is, for example, helium gas. After the back-blowing gas flow is stabilized, In the above-mentioned step S200, the process gas (such as boron fluoride, etc.) is introduced into the process chamber 100; after the process gas flow is stabilized and the pressure in the chamber is stabilized, the excitation power supply 400 can be controlled to start to illuminate the process gas. Plasma P is then formed.

Step S300: Control the second power supply 303 to output a pulse voltage signal and the output interface 304 to output a superposition signal, so that the ions in the plasma P are implanted into the wafer to be processed.

After the ignition is stable, a start command can be issued to the second power supply 303. In the embodiment of the present application, in which the power supply component 300 is integrated with the control module 301, a command to provide ion implantation energy can be issued to the control module 301. , and the control module 301 controls the second power supply 303 to start and output the set pulse voltage signal; in an embodiment in which the second power supply 303 includes a DC power supply module 303a and a DC pulse module 303b, the control module 301 can control the DC power supply 303. The power module 303a outputs voltage, power and other parameters, and the control module 301 controls the DC pulse module 303b to set the output pulse frequency and duty cycle. Subsequently, the pulse voltage signal and the first DC voltage signal form a superimposed signal at the output interface 304, and the superimposed signal is transmitted to the electrostatic chuck 200, so that the electrostatic chuck 200 has the ability to absorb the wafer to be processed and provide ion implantation. The energy of the wafer to be processed, so that the plasma immersion ion implantation process can be smoothly performed on the wafer to be processed.

After the process is completed, as shown in Figure 7, the plasma immersion ion implantation method also includes:

Step S400, control to turn off the second power supply 303;

Step S500, control to turn off the excitation power supply 400;

Step S600: Stop feeding the process gas;

Step S700: Stop flowing in the back blow gas;

Step S800: Control to turn off the first power supply 302.

By stopping the flow of process gas and back-blow gas after turning off the second power supply 303 and the excitation power supply 400, the pressure in the chamber can be ensured to be stable. In addition, by finally turning off the first power supply 302, it can be ensured that the wafer is always adsorbed and fixed on the electrostatic chuck. 200 on.

The foregoing content summarizes the features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments described herein. Those skilled in the art should also understand that such equivalent constructions do not depart from the spirit and scope of the disclosure, and that they can be variously changed, replaced, and altered herein without departing from the spirit and scope of the disclosure.

301:Control module

302:First power supply

303: Second power supply

303a: DC power module

303b: DC pulse module

304:Output interface

305: Shell

306: DC blocking module

307: Filter module

308: Three-phase rectifier module

309: Communication interface

310: Input interface

Claims (10)

A power supply component for plasma immersion ion implantation equipment. The power supply component includes a housing, a first power supply, a second power supply and an output interface, wherein: The first power supply and the second power supply are integrated in the housing, and the output interface is provided on the housing; the first power supply is connected to the output interface, and the second power supply is connected to the output interface; The first power supply is used to output a first DC voltage signal, the second power supply is used to output a pulse voltage signal, the output interface is used to output the first DC voltage signal, the pulse voltage signal or a superposition signal, the superposition signal The signal is formed by superposing the first DC voltage signal and the pulse voltage signal. The power supply component according to claim 1, wherein the power supply component further includes a control module, the control module is disposed in the housing, the control module is connected to the first power supply and the second power supply respectively, and the control module The module is used to control parameters of the first DC voltage signal output by the first power supply and parameters of the pulse voltage signal output by the second power supply. The power supply component as claimed in claim 1, wherein the power supply component further includes a filter module connected between the first power supply and the output interface, and the filter module is used to attenuate the path leading to the first power supply. This pulse voltage signal of the power supply. The power supply component according to claim 1, wherein the power supply component further includes a DC isolation module connected between the second power supply and the output interface, and the DC isolation module is used to isolate the third power supply. A DC voltage signal is directed to the second power supply. The power supply component according to claim 1, wherein the power supply component further includes a three-phase rectification module, the first power supply and the second power supply are both connected to the three-phase rectification module, and the three-phase rectification module is used for The externally input alternating current is rectified into direct current and delivered to the first power supply and the second power supply. The power component of claim 2, wherein the power component further includes a communication interface, the communication interface is installed on the housing, and the communication interface is connected to the control module, and the control module receives data through the communication interface. external instructions. The power supply assembly according to any one of claims 1 to 6, wherein the second power supply includes a DC power module and a DC pulse module, the DC power module is connected to the DC pulse module, and the DC pulse The module is connected to the output interface, the DC power module is used to output a second DC voltage signal, and the DC pulse module is used to convert the second DC voltage signal into the pulse voltage signal. The power supply component of claim 1, wherein the voltage value of the first DC voltage signal is greater than or equal to -1.5Kv and less than or equal to 1.5Kv, and the voltage value of the pulse voltage signal is greater than or equal to -5Kv and less than or equal to -500v. A plasma immersion ion implantation equipment, which includes a process chamber, an electrostatic chuck and the power supply component described in any one of claims 1 to 8. The electrostatic chuck is arranged in the process chamber, and the power supply component passes through The output interface is connected to the electrostatic chuck. A plasma immersion ion implantation method, wherein the plasma immersion ion implantation equipment described in claim 9 is used; the method includes: Transfer a wafer to be processed to the electrostatic chuck, and control the first power supply to output the first DC voltage signal so that the wafer to be processed is adsorbed and fixed on the electrostatic chuck; A process gas is introduced into the process chamber to initiate ignition to form a plasma; The second power supply is controlled to output the pulse voltage signal and the output interface outputs the superimposed signal, so that ions in the plasma are implanted into the wafer to be processed.

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