TW202306021A - 基板保持裝置 - Google Patents
基板保持裝置 Download PDFInfo
- Publication number
- TW202306021A TW202306021A TW111118647A TW111118647A TW202306021A TW 202306021 A TW202306021 A TW 202306021A TW 111118647 A TW111118647 A TW 111118647A TW 111118647 A TW111118647 A TW 111118647A TW 202306021 A TW202306021 A TW 202306021A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- annular wall
- processed
- space
- gas
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 111
- 238000004891 communication Methods 0.000 claims description 23
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- 230000003746 surface roughness Effects 0.000 claims description 3
- 238000007789 sealing Methods 0.000 abstract description 7
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 238000007599 discharging Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 74
- 238000004544 sputter deposition Methods 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000012212 insulator Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021118302 | 2021-07-16 | ||
JP2021-118302 | 2021-07-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202306021A true TW202306021A (zh) | 2023-02-01 |
Family
ID=84919300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW111118647A TW202306021A (zh) | 2021-07-16 | 2022-05-19 | 基板保持裝置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPWO2023286427A1 (ko) |
KR (1) | KR20240027065A (ko) |
CN (1) | CN116802787A (ko) |
TW (1) | TW202306021A (ko) |
WO (1) | WO2023286427A1 (ko) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3488334B2 (ja) * | 1996-04-15 | 2004-01-19 | 京セラ株式会社 | 静電チャック |
JP3834466B2 (ja) * | 2000-10-30 | 2006-10-18 | 株式会社日立製作所 | 半導体製造装置の制御方法 |
JP2010123810A (ja) | 2008-11-20 | 2010-06-03 | Ulvac Japan Ltd | 基板保持装置及び基板温度制御方法 |
JP5973841B2 (ja) * | 2012-08-22 | 2016-08-23 | 日本特殊陶業株式会社 | 静電チャックのガス制御装置およびガス制御方法 |
KR102529412B1 (ko) | 2017-03-31 | 2023-05-04 | 램 리써치 코포레이션 | 플렉서블 웨이퍼 온도 제어부를 갖는 정전 척 (electrostatic chuck) |
JP7486018B2 (ja) * | 2018-12-21 | 2024-05-17 | Toto株式会社 | 静電チャック |
-
2022
- 2022-05-09 CN CN202280012858.2A patent/CN116802787A/zh active Pending
- 2022-05-09 WO PCT/JP2022/019727 patent/WO2023286427A1/ja active Application Filing
- 2022-05-09 KR KR1020247003069A patent/KR20240027065A/ko unknown
- 2022-05-09 JP JP2023535151A patent/JPWO2023286427A1/ja active Pending
- 2022-05-19 TW TW111118647A patent/TW202306021A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
KR20240027065A (ko) | 2024-02-29 |
JPWO2023286427A1 (ko) | 2023-01-19 |
WO2023286427A1 (ja) | 2023-01-19 |
CN116802787A (zh) | 2023-09-22 |
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