TW202302669A - 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法、電子元件之製造方法 - Google Patents

感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法、電子元件之製造方法 Download PDF

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TW202302669A
TW202302669A TW111114320A TW111114320A TW202302669A TW 202302669 A TW202302669 A TW 202302669A TW 111114320 A TW111114320 A TW 111114320A TW 111114320 A TW111114320 A TW 111114320A TW 202302669 A TW202302669 A TW 202302669A
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Taiwan
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group
chemical formula
single bond
aforementioned
repeating unit
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TW111114320A
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English (en)
Chinese (zh)
Inventor
三好太朗
山口修平
吉岡知昭
福﨑英治
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日商富士軟片股份有限公司
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Publication of TW202302669A publication Critical patent/TW202302669A/zh

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/38—Esters containing sulfur
    • C08F220/382—Esters containing sulfur and containing oxygen, e.g. 2-sulfoethyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/38—Esters containing sulfur
    • C08F220/385—Esters containing sulfur and containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW111114320A 2021-04-15 2022-04-14 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法、電子元件之製造方法 TW202302669A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-069063 2021-04-15
JP2021069063 2021-04-15

Publications (1)

Publication Number Publication Date
TW202302669A true TW202302669A (zh) 2023-01-16

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TW111114320A TW202302669A (zh) 2021-04-15 2022-04-14 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法、電子元件之製造方法

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JP (1) JPWO2022220189A1 (https=)
KR (1) KR102828754B1 (https=)
TW (1) TW202302669A (https=)
WO (1) WO2022220189A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102748487B1 (ko) * 2023-01-05 2025-01-03 유한회사 디씨티머티리얼 포토레지스트 패턴 개선용 조성물 및 이를 이용한 포토레지스트 패턴 형성 방법
CN117720483A (zh) * 2023-11-08 2024-03-19 湖北三峡实验室 一类含芳香性三氟甲肟基磺酸酯结构的光产酸剂及其制备方法和应用
WO2025173494A1 (ja) * 2024-02-15 2025-08-21 Jsr株式会社 感放射線性組成物、パターン形成方法及び感放射線性酸発生剤
WO2025205173A1 (ja) * 2024-03-28 2025-10-02 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4145017B2 (ja) * 2001-02-08 2008-09-03 富士フイルム株式会社 感放射線性レジスト組成物
KR100796585B1 (ko) * 2001-02-08 2008-01-21 후지필름 가부시키가이샤 감방사선성 레지스트 조성물
KR101324202B1 (ko) 2006-10-25 2013-11-06 주식회사 동진쎄미켐 술포닐기를 포함하는 포토레지스트 모노머, 폴리머 및 이를포함하는 포토레지스트 조성물
JP2011186341A (ja) * 2010-03-10 2011-09-22 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、該組成物を用いてなるレジスト膜、及び該組成物を用いたパターン形成方法
TWI696891B (zh) * 2015-12-09 2020-06-21 日商住友化學股份有限公司 光阻組成物及光阻圖案之製造方法
KR102243197B1 (ko) * 2016-09-26 2021-04-22 후지필름 가부시키가이샤 레지스트 조성물, 패턴 형성 방법 및 전자 디바이스의 제조 방법

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JPWO2022220189A1 (https=) 2022-10-20
KR20230158012A (ko) 2023-11-17
WO2022220189A1 (ja) 2022-10-20
KR102828754B1 (ko) 2025-07-03

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