TW202248742A - 附多層反射膜之基板、反射型光罩基底、反射型光罩及半導體裝置之製造方法 - Google Patents

附多層反射膜之基板、反射型光罩基底、反射型光罩及半導體裝置之製造方法 Download PDF

Info

Publication number
TW202248742A
TW202248742A TW111107514A TW111107514A TW202248742A TW 202248742 A TW202248742 A TW 202248742A TW 111107514 A TW111107514 A TW 111107514A TW 111107514 A TW111107514 A TW 111107514A TW 202248742 A TW202248742 A TW 202248742A
Authority
TW
Taiwan
Prior art keywords
film
substrate
multilayer reflective
material layer
reflective film
Prior art date
Application number
TW111107514A
Other languages
English (en)
Chinese (zh)
Inventor
梅澤禎一郎
鈴木宏太
Original Assignee
日商Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ｈｏｙａ股份有限公司 filed Critical 日商Ｈｏｙａ股份有限公司
Publication of TW202248742A publication Critical patent/TW202248742A/zh

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Laminated Bodies (AREA)
TW111107514A 2021-03-02 2022-03-02 附多層反射膜之基板、反射型光罩基底、反射型光罩及半導體裝置之製造方法 TW202248742A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021032542 2021-03-02
JP2021-032542 2021-03-02

Publications (1)

Publication Number Publication Date
TW202248742A true TW202248742A (zh) 2022-12-16

Family

ID=83154389

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111107514A TW202248742A (zh) 2021-03-02 2022-03-02 附多層反射膜之基板、反射型光罩基底、反射型光罩及半導體裝置之製造方法

Country Status (5)

Country Link
US (1) US20240231214A9 (https=)
JP (1) JP7837943B2 (https=)
KR (1) KR20230148328A (https=)
TW (1) TW202248742A (https=)
WO (1) WO2022186004A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202532955A (zh) * 2023-12-27 2025-08-16 日商Ｈｏｙａ股份有限公司 反射型光罩基底、反射型光罩、及半導體裝置之製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004342867A (ja) * 2003-05-16 2004-12-02 Hoya Corp 反射型マスクブランクス及び反射型マスク
JP4946296B2 (ja) * 2006-03-30 2012-06-06 凸版印刷株式会社 反射型フォトマスクブランク及びその製造方法、反射型フォトマスク、並びに、半導体装置の製造方法
US7771895B2 (en) * 2006-09-15 2010-08-10 Applied Materials, Inc. Method of etching extreme ultraviolet light (EUV) photomasks
JP5194547B2 (ja) * 2007-04-26 2013-05-08 凸版印刷株式会社 極端紫外線露光用マスク及びマスクブランク
JP4998082B2 (ja) * 2007-05-17 2012-08-15 凸版印刷株式会社 反射型フォトマスクブランク及びその製造方法、反射型フォトマスク、並びに、半導体装置の製造方法
JP6377361B2 (ja) 2013-02-11 2018-08-22 Hoya株式会社 多層反射膜付き基板及びその製造方法、反射型マスクブランクの製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法
US9740091B2 (en) 2013-07-22 2017-08-22 Hoya Corporation Substrate with multilayer reflective film, reflective mask blank for EUV lithography, reflective mask for EUV lithography, and method of manufacturing the same, and method of manufacturing a semiconductor device
KR101504557B1 (ko) * 2014-03-23 2015-03-20 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토 마스크

Also Published As

Publication number Publication date
WO2022186004A1 (ja) 2022-09-09
US20240231214A9 (en) 2024-07-11
KR20230148328A (ko) 2023-10-24
JP7837943B2 (ja) 2026-03-31
JPWO2022186004A1 (https=) 2022-09-09
US20240134265A1 (en) 2024-04-25

Similar Documents

Publication Publication Date Title
JP7047046B2 (ja) マスクブランク用基板、多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
KR102802783B1 (ko) 반사형 마스크 블랭크, 반사형 마스크 및 반사형 마스크 블랭크의 제조 방법
KR102906466B1 (ko) 반사형 마스크 블랭크, 반사형 마스크, 그리고 반사형 마스크 및 반도체 장치의 제조 방법
JP6636581B2 (ja) 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
JP7193344B2 (ja) 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
JP2025113408A (ja) 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP7263908B2 (ja) 反射型マスクブランク、反射型マスク及び反射型マスクブランクの製造方法
US20230418148A1 (en) Multilayer reflective film-equipped substrate, reflective mask blank, reflective mask, and method for producing semiconductor device
CN112666788B (zh) 带多层反射膜的基板、反射型掩模坯料、反射型掩模及制造方法、及半导体装置制造方法
JPWO2018135468A1 (ja) 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
US12591173B2 (en) Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method for manufacturing semiconductor device
JP7688757B2 (ja) 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
TW202122907A (zh) 附導電膜之基板、反射型光罩基底及反射型光罩、以及半導體裝置之製造方法
TW202332985A (zh) 附多層反射膜之基板、反射型遮罩基底、反射型遮罩、及半導體裝置之製造方法
JP2026034634A (ja) 多層反射膜付き基板、反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
US20240411220A1 (en) Multilayer reflective film-attached substrate, reflective mask blank, reflective mask, and method for producing semiconductor device
TW202321815A (zh) 附多層反射膜之基板、反射型遮罩基底、反射型遮罩、及半導體裝置之製造方法
JP6223756B2 (ja) 多層反射膜付き基板、ｅｕｖリソグラフィー用反射型マスクブランク、ｅｕｖリソグラフィー用反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP7837943B2 (ja) 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP7271760B2 (ja) 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法
KR102961090B1 (ko) 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조 방법
WO2025205962A1 (ja) 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
KR20260051337A (ko) 다층 반사막을 갖는 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조 방법