JPWO2022186004A1 - - Google Patents

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Publication number
JPWO2022186004A1
JPWO2022186004A1 JP2023503740A JP2023503740A JPWO2022186004A1 JP WO2022186004 A1 JPWO2022186004 A1 JP WO2022186004A1 JP 2023503740 A JP2023503740 A JP 2023503740A JP 2023503740 A JP2023503740 A JP 2023503740A JP WO2022186004 A1 JPWO2022186004 A1 JP WO2022186004A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023503740A
Other languages
Japanese (ja)
Other versions
JPWO2022186004A5 (https=
JP7837943B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022186004A1 publication Critical patent/JPWO2022186004A1/ja
Publication of JPWO2022186004A5 publication Critical patent/JPWO2022186004A5/ja
Application granted granted Critical
Publication of JP7837943B2 publication Critical patent/JP7837943B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Laminated Bodies (AREA)
JP2023503740A 2021-03-02 2022-02-22 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 Active JP7837943B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021032542 2021-03-02
JP2021032542 2021-03-02
PCT/JP2022/007287 WO2022186004A1 (ja) 2021-03-02 2022-02-22 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPWO2022186004A1 true JPWO2022186004A1 (https=) 2022-09-09
JPWO2022186004A5 JPWO2022186004A5 (https=) 2025-01-20
JP7837943B2 JP7837943B2 (ja) 2026-03-31

Family

ID=83154389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023503740A Active JP7837943B2 (ja) 2021-03-02 2022-02-22 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Country Status (5)

Country Link
US (1) US20240231214A9 (https=)
JP (1) JP7837943B2 (https=)
KR (1) KR20230148328A (https=)
TW (1) TW202248742A (https=)
WO (1) WO2022186004A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202532955A (zh) * 2023-12-27 2025-08-16 日商Ｈｏｙａ股份有限公司 反射型光罩基底、反射型光罩、及半導體裝置之製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004342867A (ja) * 2003-05-16 2004-12-02 Hoya Corp 反射型マスクブランクス及び反射型マスク
JP2007294840A (ja) * 2006-03-30 2007-11-08 Toppan Printing Co Ltd 反射型フォトマスクブランク及びその製造方法、反射型フォトマスク、並びに、半導体装置の製造方法
JP2008277398A (ja) * 2007-04-26 2008-11-13 Toppan Printing Co Ltd 極端紫外線露光用マスク及びマスクブランク
JP2008288361A (ja) * 2007-05-17 2008-11-27 Toppan Printing Co Ltd 反射型フォトマスクブランク及びその製造方法、反射型フォトマスク、並びに、半導体装置の製造方法
JP2014042056A (ja) * 2006-09-15 2014-03-06 Applied Materials Inc 極紫外線（ｅｕｖ）フォトマスクのエッチング方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6377361B2 (ja) 2013-02-11 2018-08-22 Hoya株式会社 多層反射膜付き基板及びその製造方法、反射型マスクブランクの製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法
US9740091B2 (en) 2013-07-22 2017-08-22 Hoya Corporation Substrate with multilayer reflective film, reflective mask blank for EUV lithography, reflective mask for EUV lithography, and method of manufacturing the same, and method of manufacturing a semiconductor device
KR101504557B1 (ko) * 2014-03-23 2015-03-20 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토 마스크

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004342867A (ja) * 2003-05-16 2004-12-02 Hoya Corp 反射型マスクブランクス及び反射型マスク
JP2007294840A (ja) * 2006-03-30 2007-11-08 Toppan Printing Co Ltd 反射型フォトマスクブランク及びその製造方法、反射型フォトマスク、並びに、半導体装置の製造方法
JP2014042056A (ja) * 2006-09-15 2014-03-06 Applied Materials Inc 極紫外線（ｅｕｖ）フォトマスクのエッチング方法
JP2008277398A (ja) * 2007-04-26 2008-11-13 Toppan Printing Co Ltd 極端紫外線露光用マスク及びマスクブランク
JP2008288361A (ja) * 2007-05-17 2008-11-27 Toppan Printing Co Ltd 反射型フォトマスクブランク及びその製造方法、反射型フォトマスク、並びに、半導体装置の製造方法

Also Published As

Publication number Publication date
WO2022186004A1 (ja) 2022-09-09
TW202248742A (zh) 2022-12-16
US20240231214A9 (en) 2024-07-11
KR20230148328A (ko) 2023-10-24
JP7837943B2 (ja) 2026-03-31
US20240134265A1 (en) 2024-04-25

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