TW202229487A - Adhesive film for circuit connection, method for manufacturing same, connection structure body, and method for manufacturing same - Google Patents

Adhesive film for circuit connection, method for manufacturing same, connection structure body, and method for manufacturing same Download PDF

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TW202229487A
TW202229487A TW110141973A TW110141973A TW202229487A TW 202229487 A TW202229487 A TW 202229487A TW 110141973 A TW110141973 A TW 110141973A TW 110141973 A TW110141973 A TW 110141973A TW 202229487 A TW202229487 A TW 202229487A
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component
adhesive film
conductive particles
circuit connection
mass
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森谷敏光
赤井邦彥
市村剛幸
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日商昭和電工材料股份有限公司
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00Processes of polymerisation
    • C08F2/46Polymerisation initiated by wave energy or particle radiation
    • C08F2/48Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F22/00Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides or nitriles thereof
    • C08F22/10Esters
    • C08F22/1006Esters of polyhydric alcohols or polyhydric phenols, e.g. ethylene glycol dimethacrylate
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22Di-epoxy compounds
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/02Elements
    • C08K3/08Metals
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/04Non-macromolecular additives inorganic
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/06Non-macromolecular additives organic
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00Adhesives based on unspecified macromolecular compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35Heat-activated
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02Electrically-conducting adhesives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Conductive Materials (AREA)

Abstract

A method of manufacturing an adhesive film for circuit connection, the method comprising: preparing a substrate having a plurality of recesses on a surface thereof and having conductive particles in at least a portion of the plurality of recesses; providing, on the surface of the substrate, a composition layer containing a photosetting component and a first thermosetting component to transfer the conductive particles to the composition layer; irradiating the composition layer with light to form a first adhesive layer containing the conductive particles, a cured product of the photosetting component, and the first thermosetting component; and providing, on one surface of the first adhesive layer, a second adhesive layer containing a second thermosetting component.

Description

電路連接用接著劑薄膜及其製造方法、以及連接結構體及其製造方法Adhesive film for circuit connection, method for producing the same, and connecting structure and method for producing the same

本發明係有關一種電路連接用接著劑薄膜及其製造方法、以及連接結構體及其製造方法。The present invention relates to an adhesive film for circuit connection, a method for producing the same, a connection structure, and a method for producing the same.

在液晶顯示用玻璃面板上安裝液晶驅動用IC之方式能夠大致分為COG(Chip-on-Glass:覆晶玻璃構裝)安裝和COF(Chip-on-Flex:覆晶軟板構裝)安裝這兩種。在COG安裝中,使用包含導電粒子之接著劑(例如電路連接用接著劑)將液晶驅動用IC直接接合於玻璃面板上。另一方面,在COF安裝中,將液晶驅動用IC接合於具有金屬配線之可撓性膠帶,使用包含導電粒子之接著劑(例如電路連接用接著劑)將該等接合於玻璃面板。The method of mounting the liquid crystal driver IC on the glass panel for liquid crystal display can be roughly divided into COG (Chip-on-Glass: flip-chip glass) mounting and COF (Chip-on-Flex: flip-chip flexible board) mounting. Both. In COG mounting, an IC for driving a liquid crystal is directly bonded to a glass panel using an adhesive containing conductive particles (eg, an adhesive for circuit connection). On the other hand, in COF mounting, a liquid crystal driver IC is bonded to a flexible tape having metal wiring, and these are bonded to a glass panel using an adhesive containing conductive particles (eg, an adhesive for circuit connection).

然而,隨著近年來液晶顯示的高精細化,作為液晶驅動用IC的電路電極的金屬凸塊的間距及面積逐漸變窄。因此,有接著劑中的導電粒子在相鄰之電路電極之間流出而發生短路之虞。特別是在COG安裝中該傾向係顯著的。若導電粒子在相鄰之電路電極之間流出,則在金屬凸塊與玻璃面板之間捕獲之導電粒子數減少,有引起對置之電路電極之間的連接電阻上升之連接不良之虞。However, the pitch and area of metal bumps serving as circuit electrodes of liquid crystal driving ICs have been gradually narrowed with the increase in the definition of liquid crystal displays in recent years. Therefore, there is a possibility that the conductive particles in the adhesive flow out between adjacent circuit electrodes to cause a short circuit. This tendency is particularly pronounced in COG installations. If conductive particles flow out between adjacent circuit electrodes, the number of conductive particles captured between the metal bumps and the glass panel decreases, and there is a possibility that the connection resistance between the opposing circuit electrodes increases, resulting in poor connection.

作為解決該等問題之方法,提出了一種使複數個絕緣粒子(子粒)附著於導電粒子(母粒)的表面而形成複合粒子(絕緣被覆導電粒子)之方法。例如,在專利文獻1中提出了一種使球狀的樹脂粒子附著於導電粒子的表面之方法。As a method to solve these problems, a method of forming composite particles (insulation-coated conductive particles) by attaching a plurality of insulating particles (daughter particles) to the surfaces of conductive particles (mother particles) has been proposed. For example, Patent Document 1 proposes a method of attaching spherical resin particles to the surfaces of conductive particles.

[專利文獻1]日本專利第4773685號公報[Patent Document 1] Japanese Patent No. 4773685

為了不使用上述絕緣被覆導電粒子而解決上述之問題,本發明人等探討了藉由如下方法來製造電路連接用接著劑薄膜:預先在形成有凹部之基體的該凹部配置導電粒子之後,在該基體的形成有凹部之面設置接著劑層,將導電粒子轉印到該接著劑層。依據該方法,能夠將導電粒子配置成在薄膜內的規定的區域中以分離之狀態排列。因此,例如,藉由使用具有與應連接之電極的圖案(電路圖案)相對應之凹部圖案之基體來製造電路連接用接著劑薄膜,能夠充分地控制電路連接用接著劑薄膜中的導電粒子的位置及個數。In order to solve the above-mentioned problems without using the above-mentioned insulating-coated conductive particles, the inventors of the present invention examined the production of an adhesive film for circuit connection by preliminarily arranging conductive particles in the concave portion of the substrate having the concave portion formed therein, An adhesive layer is provided on the surface of the substrate on which the recesses are formed, and the conductive particles are transferred to the adhesive layer. According to this method, the conductive particles can be arranged in a separated state in a predetermined region in the thin film. Therefore, for example, by using a substrate having a pattern of concave portions corresponding to the pattern (circuit pattern) of the electrode to be connected to manufacture the adhesive film for circuit connection, it is possible to sufficiently control the amount of conductive particles in the adhesive film for circuit connection. location and number.

然而,在上述方法中,為了將導電粒子轉印到接著劑層,需要使接著劑層具有適當的流動性。因此,在藉由上述方法獲得之電路連接用接著劑薄膜中,在連接時構成接著劑層之樹脂流動,同時導電粒子亦流動,藉此有時會導致導電粒子從對置之電路電極之間被排除。又,還考慮藉由在將導電粒子轉印到接著劑層之後使接著劑層固化來抑制導電粒子的流動,但是此時在連接時存在於電極與導電粒子之間之樹脂不易被排除並且容易發生連接電阻上升之不良情況。However, in the above method, in order to transfer the conductive particles to the adhesive layer, the adhesive layer needs to have appropriate fluidity. Therefore, in the adhesive film for circuit connection obtained by the above method, the resin constituting the adhesive layer flows at the time of connection, and the conductive particles also flow, thereby sometimes causing the conductive particles to pass from between the opposing circuit electrodes. to be excluded. In addition, it is also considered to suppress the flow of the conductive particles by curing the adhesive layer after transferring the conductive particles to the adhesive layer, but in this case, the resin existing between the electrodes and the conductive particles at the time of connection is not easily removed and it is easy to There is a problem that the connection resistance rises.

因此,本發明的主要目的為提供一種製造能夠一邊充分地控制導電粒子的位置及個數,一邊提高對置之電路電極之間的導電粒子的捕獲率,並且能夠充分地確保電極之間的導通之電路連接用接著劑薄膜之方法。Therefore, the main object of the present invention is to provide a manufacturing method capable of improving the capture rate of the conductive particles between the opposing circuit electrodes while sufficiently controlling the position and number of the conductive particles, and sufficiently ensuring the conduction between the electrodes. The method of the adhesive film for circuit connection.

本發明的一方面係有關一種下述[1]至[18]中所示之電路連接用接著劑薄膜之製造方法。One aspect of the present invention relates to a method for producing an adhesive film for circuit connection shown in the following [1] to [18].

[1]一種電路連接用接著劑薄膜之製造方法,其包括如下步驟:準備在表面具有複數個凹部並且在該複數個凹部的至少一部分配置有導電粒子之基體;藉由在前述基體的前述表面上設置含有光固化性成分及第1熱固化性成分之組成物層,將前述導電粒子轉印到前述組成物層;藉由對前述組成物層照射光而形成含有複數個前述導電粒子、前述光固化性成分的固化物及前述第1熱固化性成分之第1接著劑層;及在前述第1接著劑層的一個面上設置含有第2熱固化性成分之第2接著劑層。[1] A method for producing an adhesive film for circuit connection, comprising the steps of: preparing a substrate having a plurality of concave portions on the surface and disposing conductive particles on at least a part of the plurality of concave portions; A composition layer containing a photocurable component and a first thermosetting component is provided thereon, the conductive particles are transferred to the composition layer, and light is irradiated to the composition layer to form a plurality of conductive particles, the The cured product of the photocurable component and the first adhesive layer of the first thermosetting component; and the second adhesive layer containing the second thermosetting component is provided on one surface of the first adhesive layer.

[2]如[1]所述之電路連接用接著劑薄膜之製造方法,其中 前述光固化性成分包含自由基聚合性化合物及光自由基聚合起始劑,前述第1熱固化性成分包含陽離子聚合性化合物及熱陽離子聚合起始劑。 [2] The method for producing an adhesive film for circuit connection according to [1], wherein The said photocurable component contains a radically polymerizable compound and a photoradical polymerization initiator, and the said 1st thermosetting component contains a cationically polymerizable compound and a thermal cationic polymerization initiator.

[3]如[2]所述之電路連接用接著劑薄膜之製造方法,其中 前述第1熱固化性成分包含具有環狀醚基之化合物作為前述陽離子聚合性化合物。 [3] The method for producing an adhesive film for circuit connection according to [2], wherein The said 1st thermosetting component contains the compound which has a cyclic ether group as the said cationically polymerizable compound.

[4]如[3]所述之電路連接用接著劑薄膜之製造方法,其中 前述第1熱固化性成分包含選自由氧雜環丁烷化合物及脂環式環氧化合物組成的組中之至少1種作為前述陽離子聚合性化合物。 [4] The method for producing an adhesive film for circuit connection according to [3], wherein The said 1st thermosetting component contains at least 1 sort(s) chosen from the group which consists of an oxetane compound and an alicyclic epoxy compound as the said cationically polymerizable compound.

[5]如[2]至[4]之任一項所述之電路連接用接著劑薄膜之製造方法,其中 前述光固化性成分包含由下述式(1)表示之化合物作為前述自由基聚合性化合物。 [化學式1]

Figure 02_image001
[式(1)中,R 1表示氫原子或甲基,X表示碳數1~3的烷二基。] [5] The method for producing an adhesive film for circuit connection according to any one of [2] to [4], wherein the photocurable component contains a compound represented by the following formula (1) as the radical polymerization sexual compounds. [Chemical formula 1]
Figure 02_image001
[In formula (1), R 1 represents a hydrogen atom or a methyl group, and X represents an alkanediyl group having 1 to 3 carbon atoms. ]

[6]如[2]至[5]之任一項所述之電路連接用接著劑薄膜之製造方法,其中 前述光固化性成分包含由下述式(I)表示之化合物作為前述光自由基聚合起始劑。 [化學式2]

Figure 02_image003
[式(I)中,R 2、R 3及R 4分別獨立地表示氫原子、碳數1~20的烷基或包含芳香族系烴基之有機基團。] [6] The method for producing an adhesive film for circuit connection according to any one of [2] to [5], wherein the photocurable component contains a compound represented by the following formula (I) as the photoradical polymerization initiator. [Chemical formula 2]
Figure 02_image003
[In formula (I), R 2 , R 3 and R 4 each independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, or an organic group including an aromatic hydrocarbon group. ]

[7]如[2]至[6]之任一項所述之電路連接用接著劑薄膜之製造方法,其中 前述第1熱固化性成分包含由下述式(II)或下述式(III)表示之具有陽離子之鹽化合物作為前述熱陽離子聚合起始劑。 [化學式3]

Figure 02_image005
[式(II)中,R 5及R 6分別獨立地表示氫原子、碳數1~20的烷基或者包含具有取代基或未經取代的芳香族系烴基之有機基團,R 7表示碳數1~6的烷基。] [化學式4]
Figure 02_image007
[式(III)中,R 8及R 9分別獨立地表示氫原子、碳數1~20的烷基或者包含具有取代基或未經取代的芳香族系烴基之有機基團,R 10及R 11分別獨立地表示碳數1~6的烷基。] [7] The method for producing an adhesive film for circuit connection according to any one of [2] to [6], wherein the first thermosetting component contains the following formula (II) or the following formula (III) ) represents a salt compound having a cation as the aforementioned thermal cationic polymerization initiator. [Chemical formula 3]
Figure 02_image005
[In formula (II), R 5 and R 6 each independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, or an organic group containing a substituted or unsubstituted aromatic hydrocarbon group, and R 7 represents a carbon An alkyl group of numbers 1 to 6. ] [Chemical formula 4]
Figure 02_image007
[In formula (III), R 8 and R 9 each independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, or an organic group containing a substituted or unsubstituted aromatic hydrocarbon group, R 10 and R 11 each independently represents an alkyl group having 1 to 6 carbon atoms. ]

[8]如[1]至[7]之任一項所述之電路連接用接著劑薄膜之製造方法,其中 前述導電粒子的平均粒徑為1~30μm,前述導電粒子的粒徑的C.V.值為20%以下。 [8] The method for producing an adhesive film for circuit connection according to any one of [1] to [7], wherein The average particle diameter of the said conductive particle is 1-30 micrometers, and the C.V. value of the particle diameter of the said conductive particle is 20% or less.

[9]如[1]至[8]之任一項所述之電路連接用接著劑薄膜之製造方法,其中 前述導電粒子為焊料粒子。 [9] The method for producing an adhesive film for circuit connection according to any one of [1] to [8], wherein The aforementioned conductive particles are solder particles.

[10]如[9]所述之電路連接用接著劑薄膜之製造方法,其中 前述焊料粒子包含選自由錫、錫合金、銦及銦合金組成的組中之至少一種。 [10] The method for producing an adhesive film for circuit connection according to [9], wherein The aforementioned solder particles include at least one selected from the group consisting of tin, tin alloys, indium, and indium alloys.

[11]如[10]所述之電路連接用接著劑薄膜之製造方法,其中 前述焊料粒子包含選自由In-Bi合金、In-Sn合金、In-Sn-Ag合金、Sn-Au合金、Sn-Bi合金、Sn-Bi-Ag合金、Sn-Ag-Cu合金及Sn-Cu合金組成的組中之至少一種。 [11] The method for producing an adhesive film for circuit connection according to [10], wherein The aforementioned solder particles are selected from the group consisting of In-Bi alloy, In-Sn alloy, In-Sn-Ag alloy, Sn-Au alloy, Sn-Bi alloy, Sn-Bi-Ag alloy, Sn-Ag-Cu alloy and Sn-Cu At least one of the group consisting of alloys.

[12]如[9]至[11]之任一項所述之電路連接用接著劑薄膜之製造方法,其中 在前述焊料粒子的表面的一部分具有平面部。 [12] The method for producing an adhesive film for circuit connection according to any one of [9] to [11], wherein A part of the surface of the said solder particle has a flat part.

[13]如[12]所述之電路連接用接著劑薄膜之製造方法,其中 前述平面部的直徑B與前述焊料粒子的直徑A之比(B/A)滿足下述式。 0.01<B/A<1.0 [13] The method for producing an adhesive film for circuit connection according to [12], wherein The ratio (B/A) of the diameter B of the flat portion to the diameter A of the solder particles satisfies the following formula. 0.01<B/A<1.0

[14]如[1]至[13]之任一項所述之電路連接用接著劑薄膜之製造方法,其中 在由兩對平行線製作與前述導電粒子的投影像外接之四邊形之情形下,將對置之邊之間的距離作為X及Y,並且Y<X時,X及Y滿足下述式。 0.8<Y/X≤1.0 [14] The method for producing an adhesive film for circuit connection according to any one of [1] to [13], wherein When a quadrilateral circumscribing the projected image of the conductive particle is formed from two pairs of parallel lines, the distance between the opposing sides is X and Y, and when Y<X, X and Y satisfy the following formula. 0.8<Y/X≤1.0

[15]如[1]至[14]之任一項所述之電路連接用接著劑薄膜之製造方法,其中 前述複數個凹部以規定的圖案形成。 [15] The method for producing an adhesive film for circuit connection according to any one of [1] to [14], wherein The plurality of recesses are formed in a predetermined pattern.

在上述方面的製造方法中,使用含有光固化性成分和熱固化性成分之組成物,將導電粒子轉印到由該組成物製成之層(組成物層)之後使該組成物進行光固化。因此,能夠不損害轉印性而抑制連接時的樹脂流動。因此,依據上述方面的製造方法,能夠獲得能夠一邊充分地控制電路連接用接著劑薄膜中的導電粒子的位置及個數,一邊提高對置之電路電極之間的導電粒子的捕獲率之電路連接用接著劑薄膜。又,在上述方面的製造方法中,能夠充分地確保電極之間的導通。推測這是因為:藉由倂用光固化性成分和熱固化性成分而能夠在上述組成物層的光固化後的層(第1接著劑層)中含有熱固化性成分,能夠對光固化後的層賦予樹脂流動性至在連接時導電粒子不會被排除之程度,因此可抑制藉由在連接時存在於電極與導電粒子之間之樹脂不易被排除而連接電阻上升等不良情況的發生。In the production method of the above aspect, using a composition containing a photocurable component and a thermosetting component, the conductive particles are transferred to a layer (composition layer) made of the composition, and then the composition is photocured . Therefore, resin flow at the time of connection can be suppressed without impairing transferability. Therefore, according to the manufacturing method of the above-mentioned aspect, it is possible to obtain a circuit connection that can improve the capture rate of the conductive particles between the opposing circuit electrodes while sufficiently controlling the position and number of the conductive particles in the adhesive film for circuit connection. Use adhesive film. Moreover, in the manufacturing method of the said aspect, the conduction|electrical_connection between electrodes can be fully ensured. This is presumably because the thermosetting component can be contained in the photocured layer (the first adhesive layer) of the above-mentioned composition layer by using the photocurable component and the thermosetting component, and the photocurable component This layer imparts fluidity to the resin to such an extent that the conductive particles are not excluded during connection, so that the occurrence of problems such as an increase in connection resistance due to the resin existing between the electrodes and the conductive particles is not easily removed during connection can be suppressed.

本發明的另一方面係有關一種下述[16]中所示之電路連接用接著劑薄膜。Another aspect of the present invention relates to an adhesive film for circuit connection shown in the following [16].

[16]一種電路連接用接著劑薄膜,其含有導電粒子,前述電路連接用接著劑薄膜具備:第1接著劑層,含有複數個前述導電粒子、光固化性成分的固化物及第1熱固化性成分;及第2接著劑層,設置於第1接著劑層上且含有第2熱固化性成分,前述複數個導電粒子的至少一部分,在俯視前述電路連接用接著劑薄膜時以規定的圖案排列,並且在前述電路連接用接著劑薄膜的縱截面中以相鄰之導電粒子彼此相互分離之狀態橫向排列。[16] An adhesive film for circuit connection, comprising conductive particles, the adhesive film for circuit connection comprising: a first adhesive layer containing a plurality of the conductive particles, a cured product of a photocurable component, and a first thermosetting and a second adhesive layer, which is provided on the first adhesive layer and contains a second thermosetting component, and at least a part of the plurality of conductive particles is formed in a predetermined pattern in a plan view of the adhesive film for circuit connection They are arranged, and in the longitudinal section of the adhesive film for circuit connection, they are arranged laterally in a state where the adjacent conductive particles are separated from each other.

本發明的另一方面係有關一種下述[17]中所示之連接結構體。Another aspect of the present invention relates to a connecting structure shown in the following [17].

[17]一種連接結構體,其具備:第1電路構件,具有第1電極;第2電路構件,具有第2電極;及連接部,包含[16]所述之電路連接用接著劑薄膜的固化體,將前述第1電極與前述第2電極經由前述導電粒子相互電連接並且將前述第1電路構件與前述第2電路構件接著。[17] A connection structure comprising: a first circuit member having a first electrode; a second circuit member having a second electrode; and a connection portion comprising the curing of the adhesive film for circuit connection described in [16] The first electrode and the second electrode are electrically connected to each other via the conductive particles, and the first circuit member and the second circuit member are bonded together.

本發明的另一方面係有關一種下述[18]中所示之連接結構體之製造方法。Another aspect of the present invention relates to a method for producing the connecting structure shown in the following [18].

[18]一種連接結構體之製造方法,其包括如下步驟:在具有第1電極之第1電路構件的設置有前述第1電極之面與具有第2電極之第2電路構件的設置有前述第2電極之面之間配置[16]所述之電路連接用接著劑薄膜;及將包含前述第1電路構件、前述電路連接用接著劑薄膜及前述第2電路構件之積層體在前述積層體的厚度方向上按壓之狀態下進行加熱,藉此將前述第1電極與前述第2電極經由前述導電粒子相互電連接並且將前述第1電路構件與前述第2電路構件接著。 [發明效果] [18] A method of manufacturing a connection structure, comprising the steps of: a surface of a first circuit member having a first electrode on which the first electrode is provided and a second circuit member having a second electrode having the first electrode provided thereon The adhesive film for circuit connection described in [16] is arranged between the surfaces of the two electrodes; and a laminate comprising the first circuit member, the adhesive film for circuit connection, and the second circuit member is placed on the side of the laminate. The first electrode and the second electrode are electrically connected to each other via the conductive particles by heating while being pressed in the thickness direction, and the first circuit member and the second circuit member are bonded together. [Inventive effect]

依據本發明,能夠提供一種製造能夠一邊充分地控制導電粒子的位置及個數,一邊提高對置之電路電極之間的導電粒子的捕獲率,並且能夠充分地確保電極之間的導通之電路連接用接著劑薄膜之方法。According to the present invention, it is possible to provide a circuit connection that can sufficiently control the position and number of conductive particles, improve the capture rate of conductive particles between opposing circuit electrodes, and sufficiently ensure continuity between the electrodes. The method of using the adhesive film.

以下,對本發明的實施形態進行說明。但是,本發明並不限定於以下實施形態。另外,關於以下例示之材料,只要無特別說明,則可以單獨使用一種,亦可以組合使用兩種以上。關於組成物中的各成分的含量,在組成物中存在複數種相當於各成分之物質之情形下,只要無特別說明,則係指存在於組成物中之該複數種物質的總量。使用“~”示出之數值範圍表示將記載於“~”的前後之數值分別作為最小值及最大值而包括之範圍。在本說明書中階段性地記載之數值範圍內,某一階段的數值範圍的上限值或下限值可以替換為其他階段的數值範圍的上限值或下限值。在本說明書中所記載之數值範圍內,該數值範圍的上限值或下限值可以替換為實施例中所示之值。在本說明書中,“(甲基)丙烯酸酯”係指丙烯酸酯及與其相對應之甲基丙烯酸酯中的至少一者。在“(甲基)丙烯醯基”等其他近似的表述中亦相同。Hereinafter, embodiments of the present invention will be described. However, the present invention is not limited to the following embodiments. In addition, as for the materials illustrated below, unless otherwise specified, one type may be used alone, or two or more types may be used in combination. The content of each component in the composition refers to the total amount of the plurality of substances present in the composition unless otherwise specified, when there are plural substances corresponding to each component in the composition. The numerical range shown using "-" shows the range which includes the numerical value described before and after "-" as a minimum value and a maximum value, respectively. In the numerical range described in stages in this specification, the upper limit value or the lower limit value of the numerical value range in a certain stage may be replaced with the upper limit value or the lower limit value of the numerical value range in another stage. Within the numerical range described in this specification, the upper limit value or the lower limit value of the numerical range can be replaced with the value shown in the Examples. In this specification, "(meth)acrylate" means at least one of acrylate and its corresponding methacrylate. The same applies to other similar expressions such as "(meth)acryloyl".

<電路連接用接著劑薄膜> 圖1係示意性地表示一實施形態的電路連接用接著劑薄膜的縱截面之圖。圖1中所示之電路連接用接著劑薄膜10A為如下薄膜狀的接著劑(接著劑薄膜),其具備:第1接著劑層1,含有複數個導電粒子4以及包含光固化性成分的固化物及第1熱固化性成分之接著劑成分3;及第2接著劑層2,設置於第1接著劑層1上且含有第2熱固化性成分。在本說明書中,“縱截面”係指與主表面(例如電路連接用接著劑薄膜10A的主表面)大致正交之截面(厚度方向的截面)。又,第1熱固化性成分及第2熱固化性成分分別係指第1接著劑層及第2接著劑層中所含有之熱固化性成分。 <Adhesive film for circuit connection> FIG. 1 is a diagram schematically showing a longitudinal section of an adhesive film for circuit connection according to an embodiment. The adhesive film 10A for circuit connection shown in FIG. 1 is a film-like adhesive (adhesive film) including a first adhesive layer 1, a plurality of conductive particles 4 and a cured photocurable component. The adhesive component 3 of the material and the first thermosetting component; and the second adhesive layer 2, which are provided on the first adhesive layer 1 and contain the second thermosetting component. In this specification, a "longitudinal cross section" means a cross section (a cross section in the thickness direction) substantially perpendicular to the main surface (for example, the main surface of the adhesive film 10A for circuit connection). In addition, a 1st thermosetting component and a 2nd thermosetting component mean the thermosetting component contained in a 1st adhesive bond layer and a 2nd adhesive bond layer, respectively.

複數個導電粒子4的至少一部分,在電路連接用接著劑薄膜10A的縱截面中,以相鄰之導電粒子彼此相互分離之狀態橫向排列。換言之,電路連接用接著劑薄膜10A由在其縱截面中與相鄰之導電粒子分離之狀態的導電粒子4橫向形成列之中央區域10a和不存在導電粒子4的表面側區域10b、10c構成。在此,“橫向”係指與電路連接用接著劑薄膜的主表面大致平行的方向(圖1中的左右方向)。相鄰之導電粒子彼此以相互分離之狀態橫向排列,例如,能夠藉由利用掃描型電子顯微鏡等觀察電路連接用接著劑薄膜的縱截面來確認。另外,在圖1中,導電粒子4的一部分從第1接著劑層1的表面露出(例如,突出到第2接著劑層2側),但是亦可以將整個導電粒子4埋入第1接著劑層1中,以使導電粒子4不會從第1接著劑層1的表面露出。At least a part of the plurality of conductive particles 4 is laterally arranged in a state in which adjacent conductive particles are separated from each other in the longitudinal section of the adhesive film 10A for circuit connection. In other words, the adhesive film 10A for circuit connection is composed of a central region 10a in which conductive particles 4 are separated from adjacent conductive particles in a longitudinal section and a central region 10a in which conductive particles 4 are formed in a horizontal row, and surface side regions 10b and 10c where conductive particles 4 do not exist. Here, the "horizontal direction" refers to a direction substantially parallel to the main surface of the adhesive film for circuit connection (the left-right direction in FIG. 1 ). The adjacent conductive particles are laterally arranged in a state of being separated from each other, and can be confirmed, for example, by observing the vertical cross section of the adhesive film for circuit connection with a scanning electron microscope or the like. In addition, in FIG. 1 , a part of the conductive particles 4 is exposed from the surface of the first adhesive layer 1 (for example, protruding to the side of the second adhesive layer 2 ), but the entire conductive particles 4 may be embedded in the first adhesive. In the layer 1 , the conductive particles 4 are not exposed from the surface of the first adhesive layer 1 .

圖2及圖3係示意性地表示電路連接用接著劑薄膜10A中的導電粒子4的配置例之俯視圖。如圖2及圖3所示,複數個導電粒子4的至少一部分,在俯視電路連接用接著劑薄膜時以規定的圖案排列。在圖2中,在俯視電路連接用接著劑薄膜的時,在電路連接用接著劑薄膜10A的整個區域中以規則且大致均等的間隔配置有導電粒子4,但是例如,如圖3所示,亦可以以在俯視電路連接用接著劑薄膜時,規則地形成規則地配置有複數個導電粒子4之區域10d和不存在導電粒子4之區域10e之方式,配置有導電粒子4。導電粒子4的位置及個數例如能夠依據應連接之電極的形狀、尺寸及圖案等來設定。複數個導電粒子的至少一部分以規定的圖案排列,例如,能夠藉由使用電子顯微鏡等從電路連接用接著劑薄膜的主表面上方觀察該電路連接用接著劑薄膜來確認。2 and 3 are plan views schematically showing an example of arrangement of the conductive particles 4 in the adhesive film 10A for circuit connection. As shown in FIGS. 2 and 3 , at least a part of the plurality of conductive particles 4 is arranged in a predetermined pattern in a plan view of the adhesive film for circuit connection. In FIG. 2 , the conductive particles 4 are arranged at regular and substantially equal intervals in the entire area of the adhesive film for circuit connection 10A in a plan view of the adhesive film for circuit connection. However, as shown in FIG. 3 , for example, The conductive particles 4 may be arranged so as to regularly form regions 10d where a plurality of conductive particles 4 are regularly arranged and a region 10e where the conductive particles 4 do not exist in a plan view of the adhesive film for circuit connection. The position and number of the conductive particles 4 can be set according to, for example, the shape, size, and pattern of the electrodes to be connected. At least a part of a plurality of conductive particles are arranged in a predetermined pattern, for example, can be confirmed by observing the adhesive film for circuit connection from above the main surface of the adhesive film for circuit connection using an electron microscope or the like.

(第1接著劑層) 第1接著劑層1含有導電粒子4(以下,有時稱為“(A)成分”。)、光固化性成分(以下,有時稱為“(B)成分”。)的固化物及第1熱固化性成分(以下,有時稱為“(C)成分”。)。(B)成分的固化物可以為使(B)成分完全固化而成之固化物,可以為使(B)成分的一部分固化而成之固化物。(C)成分為在連接時能夠流動之成分,例如為未固化的固化性成分(例如為樹脂成分)。構成第1接著劑層1之導電粒子4以外的成分例如為不具有導電性之成分(例如,絕緣性樹脂成分)。 (1st adhesive layer) The first adhesive layer 1 contains the conductive particles 4 (hereinafter, sometimes referred to as "(A) component".), a photocurable component (hereinafter, sometimes referred to as "(B) component".) cured product and the first 1 Thermosetting component (Hereinafter, it may be referred to as "(C) component".). The hardened|cured material of (B) component may be hardened|cured fully hardened|cured of (B) component, and what hardened a part of (B) component may be sufficient as it. The component (C) is a component that can flow during connection, and is, for example, an uncured curable component (for example, a resin component). Components other than the conductive particles 4 constituting the first adhesive layer 1 are, for example, components that do not have conductivity (eg, insulating resin components).

[(A)成分:導電粒子] 關於(A)成分,只要係具有導電性之粒子,則並無特別限制,可以為由Au、Ag、Pd、Ni、Cu、焊料等金屬構成之金屬粒子、由導電性碳構成之導電性碳粒子等。(A)成分可以為具備包含非導電性的玻璃、陶瓷、塑膠(聚苯乙烯等)等之核和包含上述金屬或導電性碳且被覆核之被覆層之被覆導電粒子。(A)成分能夠單獨使用1種導電粒子或組合使用2種以上的導電粒子。 [(A) Component: Conductive Particles] The component (A) is not particularly limited as long as it is a particle having conductivity, and may be metal particles composed of metals such as Au, Ag, Pd, Ni, Cu, and solder, and conductive carbon composed of conductive carbon. particles, etc. The component (A) may be a coated conductive particle having a core containing a non-conductive glass, ceramic, plastic (polystyrene, etc.), or the like, and a coating layer containing the above-mentioned metal or conductive carbon and coating the core. (A) Component can be used individually by 1 type of conductive particle or in combination of 2 or more types of conductive particles.

在作為(A)成分使用被覆導電粒子之情形下,容易藉由加熱或加壓而使熱固化性成分的固化物變形,因此在將電極彼此電連接時,能夠增加電極與(A)成分的接觸面積,能夠進一步提高電極之間的導電性。When the coated conductive particles are used as the component (A), the cured product of the thermosetting component is easily deformed by heating or pressurizing, so that when the electrodes are electrically connected to each other, the amount of the electrode and the component (A) can be increased. The contact area can further improve the conductivity between the electrodes.

在作為(A)成分使用由熱熔融性金屬形成之金屬粒子之情形下,電極之間的連接趨於更牢固。在作為(A)成分使用焊料粒子之情形下,該傾向係顯著的。When the metal particle which consists of a hot-melt metal is used as (A) component, the connection between electrodes tends to be firmer. This tendency is remarkable when using solder particle|grains as (A) component.

就兼具連接強度和低熔點之觀點而言,焊料粒子可以包含選自由錫、錫合金、銦及銦合金組成的組中之至少一種。The solder particles may contain at least one selected from the group consisting of tin, tin alloys, indium, and indium alloys from the viewpoint of having both connection strength and low melting point.

作為錫合金,例如,能夠使用In-Sn合金、In-Sn-Ag合金、Sn-Au合金、Sn-Bi合金、Sn-Bi-Ag合金、Sn-Ag-Cu合金、Sn-Cu合金等。作為該等錫合金的具體例,可舉出下述例。 •In-Sn(In52質量%、Sn48質量%,熔點118℃) •In-Sn-Ag(In20質量%、Sn77.2質量%、Ag2.8質量%,熔點175℃) •Sn-Bi(Sn43質量%、Bi57質量%,熔點138℃) •Sn-Bi-Ag(Sn42質量%、Bi57質量%、Ag1質量%,熔點139℃) •Sn-Ag-Cu(Sn96.5質量%、Ag3質量%、Cu0.5質量%,熔點217℃) •Sn-Cu(Sn99.3質量%、Cu0.7質量%,熔點227℃) •Sn-Au(Sn21.0質量%、Au79.0質量%,熔點278℃) As the tin alloy, for example, In—Sn alloy, In—Sn—Ag alloy, Sn—Au alloy, Sn—Bi alloy, Sn—Bi—Ag alloy, Sn—Ag—Cu alloy, Sn—Cu alloy, etc. can be used. Specific examples of these tin alloys include the following examples. •In-Sn (In52 mass%, Sn48 mass%, melting point 118°C) •In-Sn-Ag (In20 mass %, Sn 77.2 mass %, Ag 2.8 mass %, melting point 175°C) •Sn-Bi (Sn43 mass%, Bi57 mass%, melting point 138℃) •Sn-Bi-Ag (Sn42 mass%, Bi57 mass%, Ag1 mass%, melting point 139℃) •Sn-Ag-Cu (96.5 mass % Sn, 3 mass % Ag, 0.5 mass % Cu, melting point 217°C) •Sn-Cu (99.3 mass % Sn, 0.7 mass % Cu, melting point 227°C) •Sn-Au (Sn 21.0 mass %, Au 79.0 mass %, melting point 278°C)

作為銦合金,例如,能夠使用In-Bi合金、In-Ag合金等。作為該等銦合金的具體例,可舉出下述例。 •In-Bi(In66.3質量%、Bi33.7質量%,熔點72℃) •In-Bi(In33.0質量%、Bi67.0質量%,熔點109℃) •In-Ag(In97.0質量%、Ag3.0質量%,熔點145℃) 另外,上述之包含錫之銦合金被分類為錫合金。 As the indium alloy, for example, an In-Bi alloy, an In-Ag alloy, or the like can be used. Specific examples of these indium alloys include the following examples. •In-Bi (In66.3 mass%, Bi33.7 mass%, melting point 72°C) •In-Bi (In33.0 mass%, Bi67.0 mass%, melting point 109°C) •In-Ag (In97.0 mass %, Ag 3.0 mass %, melting point 145°C) In addition, the above-mentioned indium alloys containing tin are classified as tin alloys.

就在高溫高濕試驗時及熱衝擊試驗時可獲得更高的可靠性之觀點而言,焊料粒子可以包含選自由In-Bi合金、In-Sn合金、In-Sn-Ag合金、Sn-Au合金、Sn-Bi合金、Sn-Bi-Ag合金、Sn-Ag-Cu合金及Sn-Cu合金組成的組中之至少一種。From the viewpoint of obtaining higher reliability in a high temperature and high humidity test and a thermal shock test, the solder particles may contain a material selected from the group consisting of In-Bi alloy, In-Sn alloy, In-Sn-Ag alloy, Sn-Au At least one of alloys, Sn-Bi alloys, Sn-Bi-Ag alloys, Sn-Ag-Cu alloys, and Sn-Cu alloys.

上述錫合金或銦合金可以依據焊料粒子的用途(使用時的溫度)等來選擇。例如,在將焊料粒子用於低溫下的熔接之情形下,若採用In-Sn合金、Sn-Bi合金,則能夠使其在150℃以下的溫度下進行熔接。在採用Sn-Ag-Cu合金、Sn-Cu合金等熔點高的材料之情形下,即使在高溫放置之後亦能夠保持高的可靠性。The above-mentioned tin alloy or indium alloy can be selected according to the application of the solder particles (temperature at the time of use) and the like. For example, when the solder particles are used for welding at low temperature, when an In—Sn alloy or a Sn—Bi alloy is used, the welding can be performed at a temperature of 150° C. or lower. When a material with a high melting point such as Sn-Ag-Cu alloy and Sn-Cu alloy is used, high reliability can be maintained even after being left at a high temperature.

焊料粒子可以包含選自Ag、Cu、Ni、Bi、Zn、Pd、Pb、Au、P及B中之一種以上。在焊料粒子包含Ag或Cu之情形下,能夠使焊料粒子的熔點降低到220℃左右,並且與電極的接合強度進一步提高,因此容易獲得更良好的導通可靠性。The solder particles may contain one or more selected from Ag, Cu, Ni, Bi, Zn, Pd, Pb, Au, P, and B. When the solder particles contain Ag or Cu, the melting point of the solder particles can be lowered to about 220° C., and the bonding strength with the electrode can be further improved, so that better conduction reliability can be easily obtained.

焊料粒子的Cu含有率例如為0.05~10質量%,可以為0.1~5質量%或0.2~3質量%。若Cu含有率為0.05質量%以上,則容易實現更良好的焊料連接可靠性。又,若Cu含有率為10質量%以下,則熔點低,容易成為潤濕性優異的焊料粒子,其結果,基於焊料粒子之接合部的連接可靠性容易變得良好。The Cu content of the solder particles is, for example, 0.05 to 10 mass %, and may be 0.1 to 5 mass % or 0.2 to 3 mass %. When the Cu content is 0.05 mass % or more, it is easy to realize better solder connection reliability. In addition, when the Cu content is 10 mass % or less, the melting point is low, and solder particles having excellent wettability are likely to be obtained. As a result, the connection reliability of the joint portion by the solder particles is likely to be good.

焊料粒子的Ag含有率例如為0.05~10質量%,可以為0.1~5質量%或0.2~3質量%。若Ag含有率為0.05質量%以上,則容易實現更良好的焊料連接可靠性。又,若Ag含有率為10質量%以下,則熔點低,容易成為潤濕性優異的焊料粒子,其結果,基於焊料粒子之接合部的連接可靠性容易變得良好。The Ag content of the solder particles is, for example, 0.05 to 10 mass %, and may be 0.1 to 5 mass % or 0.2 to 3 mass %. When the Ag content is 0.05 mass % or more, it is easy to realize better solder connection reliability. In addition, when the Ag content is 10 mass % or less, the melting point is low, and solder particles with excellent wettability are likely to be obtained. As a result, the connection reliability of the joint portion by the solder particles is likely to be good.

可以在焊料粒子的表面的一部分具有平面部。在使用這樣的焊料粒子之情形下,焊料粒子所具有之平面部與電極接觸,藉此能夠在該平面部與電極之間確保大的接觸面積。又,在連接由焊料容易潤濕擴展的材料形成之電極和由焊料不易潤濕擴展的材料形成之電極時,調整成在後者的電極側配置焊料粒子的平面部,藉此能夠適當地進行兩個電極之間的連接。焊料粒子中的上述平面部以外的表面可以為球冠狀。亦即,焊料粒子可以為具有平面部和球冠狀的曲面部者。具體而言,焊料粒子可以具有在具有直徑A之球的表面的一部分形成有直徑B的平面部之形狀。在使用這樣的焊料粒子之情形下,容易獲得更優異的導通可靠性和絕緣可靠性。A part of the surface of the solder particle may have a flat portion. When such solder particles are used, a large contact area can be secured between the flat portion and the electrode by contacting the flat portion of the solder particle with the electrode. In addition, when connecting an electrode formed of a material that is easily wetted and spread by solder and an electrode formed of a material that is not easily wetted and spread by solder, it is possible to adjust the flat surface portion of the solder particles on the electrode side of the latter, so that the two can be appropriately performed. connection between electrodes. In the solder particles, the surfaces other than the above-mentioned flat portion may be spherical crowns. That is, the solder particles may have a flat portion and a spherically crowned curved portion. Specifically, the solder particles may have a shape in which a flat portion with a diameter B is formed on a part of the surface of a ball having a diameter A. In the case of using such solder particles, it is easy to obtain more excellent conduction reliability and insulation reliability.

在焊料粒子具有在具有直徑A之球的表面的一部分形成有直徑B的平面部之形狀之情形下,就實現更優異的導通可靠性及絕緣可靠性之觀點而言,平面部的直徑B與焊料粒子的直徑A之比(B/A)例如可以超過0.01且為小於1.0(0.01<B/A<1.0),亦可以為0.1~0.9。焊料粒子的直徑A及平面部的直徑B例如能夠藉由掃描型電子顯微鏡等來觀察。具體而言,藉由掃描型電子顯微鏡來觀察任意的焊料粒子,並拍攝圖像。依據所獲得之圖像測量焊料粒子的直徑A及平面部的直徑B,並求出該粒子的B/A。對300個焊料粒子進行該作業並計算平均值,作為焊料粒子的B/A。In the case where the solder particles have a shape in which a plane portion with a diameter B is formed on a part of the surface of a ball having a diameter A, the diameter B of the plane portion is the same as the The ratio (B/A) of the diameters A of the solder particles may be, for example, more than 0.01 and less than 1.0 (0.01<B/A<1.0), or may be 0.1 to 0.9. The diameter A of the solder particles and the diameter B of the flat portion can be observed, for example, with a scanning electron microscope or the like. Specifically, arbitrary solder particles are observed with a scanning electron microscope, and an image is captured. From the obtained image, the diameter A of the solder particle and the diameter B of the flat portion are measured, and the B/A of the particle is determined. This operation was performed for 300 solder particles, and the average value was calculated as the B/A of the solder particles.

在由兩對平行線製作與導電粒子的投影像外接之四邊形之情形下,若將對置之邊之間的距離分別作為X及Y(其中,Y<X),則Y與X之比(Y/X)可以超過0.8且為1.0以下(0.8<Y/X≤1.0)。這樣的導電粒子能夠稱為更接近圓球之粒子。若導電粒子具有接近圓球的形狀,則在後述之製造方法中趨於容易將焊料粒子收納於基體的凹部。又,在導電粒子中亦使用焊料粒子之情形下,藉由焊料粒子具有接近圓球之形狀,在使對置之複數個電極之間經由焊料電連接時,在焊料粒子與電極的接觸中不易產生不均,趨於可獲得穩定之連接。Y與X之比(Y/X)可以超過0.8且小於1.0(0.8<Y/X<1.0),亦可以為0.81~0.99。關於導電粒子的投影像,例如,能夠藉由掃描型電子顯微鏡來觀察任意的導電粒子而獲得。在求出Y/X時,對所獲得之投影像繪製兩對平行線,一對平行線配置於平行線的距離最小的位置,另一對平行線配置於平行線的距離最大的位置。對300個導電粒子進行該作業並計算Y/X的平均值,將其作為導電粒子的Y/X。In the case of making a quadrilateral circumscribing the projected image of the conductive particle by two pairs of parallel lines, if the distance between the opposite sides is taken as X and Y respectively (where Y<X), then the ratio of Y to X ( Y/X) may exceed 0.8 and be 1.0 or less (0.8<Y/X≤1.0). Such conductive particles can be called particles closer to spheres. When the conductive particles have a shape close to a sphere, the solder particles tend to be easily accommodated in the recessed portions of the base in the manufacturing method described later. In addition, in the case where solder particles are also used as conductive particles, since the solder particles have a shape close to a sphere, when a plurality of electrodes facing each other are electrically connected via solder, it is difficult for the solder particles to contact the electrodes. Unevenness occurs, and a stable connection tends to be obtained. The ratio of Y to X (Y/X) may exceed 0.8 and less than 1.0 (0.8<Y/X<1.0), and may be 0.81 to 0.99. The projection image of a conductive particle can be obtained, for example, by observing arbitrary conductive particles with a scanning electron microscope. To obtain Y/X, two pairs of parallel lines are drawn on the obtained projected image, one pair of parallel lines is arranged at the position where the distance between the parallel lines is the smallest, and the other pair of parallel lines is arranged at the position where the distance between the parallel lines is the largest. This operation was performed for 300 conductive particles, and the average value of Y/X was calculated, which was taken as the Y/X of the conductive particles.

(A)成分可以為具備上述金屬粒子、導電性碳粒子或被覆導電粒子和包含樹脂等絕緣材料且被覆該粒子的表面之絕緣層之絕緣被覆導電粒子。若(A)成分為絕緣被覆導電粒子,則即使在(A)成分的含量多的情形下,由於在粒子的表面具備絕緣層,因此亦能夠抑制由(A)成分彼此的接觸引起之短路的發生,並且還能夠提高相鄰之電極電路之間的絕緣性。The component (A) may be an insulating-coated conductive particle including the above-mentioned metal particles, conductive carbon particles, or coated conductive particles, and an insulating layer containing an insulating material such as a resin and covering the surface of the particles. If the component (A) is the insulating-coated conductive particle, even when the content of the component (A) is large, since the insulating layer is provided on the surface of the particle, it is possible to suppress the short circuit caused by the contact between the components (A). occurs, and the insulation between adjacent electrode circuits can also be improved.

就容易獲得優異的導電性之觀點而言,(A)成分的平均粒徑可以為1μm以上、2μm以上或4μm以上。就容易獲得與微小尺寸的電極的更良好的連接可靠性之觀點而言,(A)成分的平均粒徑可以為30μm以下、25μm以下或20μm以下。就該等觀點而言,(A)成分的平均粒徑可以為1~30μm、2~25μm或4~20μm。The average particle diameter of the component (A) may be 1 μm or more, 2 μm or more, or 4 μm or more from the viewpoint of easily obtaining excellent electrical conductivity. The average particle diameter of the component (A) may be 30 μm or less, 25 μm or less, or 20 μm or less, from the viewpoint of easily obtaining better connection reliability with micro-sized electrodes. From these viewpoints, the average particle diameter of the component (A) may be 1 to 30 μm, 2 to 25 μm, or 4 to 20 μm.

(A)成分的平均粒徑能夠使用與尺寸相對應之各種方法來測量。例如,能夠利用動態光散射法、雷射繞射法、離心沉降法、電檢測帶法、共振式質量測量法等方法。進而,能夠利用依據藉由光學顯微鏡、電子顯微鏡等獲得之圖像測量粒子尺寸之方法。作為具體的裝置,可舉出流式粒子像分析裝置、Microtrac、庫爾特計數器等。另外,非圓球形的(A)成分的粒徑可以為SEM的圖像中的與導電粒子外接之圓的直徑。The average particle diameter of the component (A) can be measured using various methods according to the size. For example, a dynamic light scattering method, a laser diffraction method, a centrifugal sedimentation method, an electrical detection band method, a resonance mass measurement method, or the like can be used. Furthermore, a method of measuring particle size based on an image obtained by an optical microscope, an electron microscope, or the like can be used. As a specific apparatus, a flow particle image analyzer, a Microtrac, a Coulter counter, etc. are mentioned. In addition, the particle diameter of the non-spherical (A) component may be the diameter of a circle circumscribing the conductive particles in the SEM image.

就能夠實現更優異的導電可靠性及絕緣可靠性之觀點而言,(A)成分的粒徑的C.V.值可以為20%以下、10%以下、7%以下或5%以下。(A)成分的粒徑的C.V.值的下限並無特別限定,例如,可以為0.1%以上、1%以上或2%以上。The C.V. value of the particle size of the component (A) may be 20% or less, 10% or less, 7% or less, or 5% or less, from the viewpoint of realizing more excellent electrical conduction reliability and insulation reliability. The lower limit of the C.V. value of the particle size of the component (A) is not particularly limited, but may be, for example, 0.1% or more, 1% or more, or 2% or more.

關於(A)成分的粒徑的C.V.值,藉由對將導電粒子的粒徑的標準偏差除以平均粒徑而得之值乘以100來計算。關於導電粒子的粒徑的標準偏差,藉由與上述之導電粒子的平均粒徑之測量方法相同的方法來測量。The C.V. value of the particle diameter of the component (A) was calculated by multiplying the value obtained by dividing the standard deviation of the particle diameter of the conductive particles by the average particle diameter by 100. The standard deviation of the particle diameter of the conductive particles was measured by the same method as the above-mentioned method of measuring the average particle diameter of the conductive particles.

(A)成分可以為平均粒徑係1~30μm並且粒徑的C.V.值係20%以下的導電粒子。這樣的導電粒子兼具小的平均粒徑和窄的粒度分佈,能夠適當地用作應用於導電可靠性及絕緣可靠性高的各向異性導電性材料之導電粒子。The component (A) may be conductive particles having an average particle diameter of 1 to 30 μm and a C.V. value of the particle diameter of 20% or less. Such conductive particles have both a small average particle diameter and a narrow particle size distribution, and can be suitably used as conductive particles applied to anisotropic conductive materials with high electrical conductivity and high insulation reliability.

就能夠進一步提高導電性之觀點而言,以第1接著劑層的總質量為基準,(A)成分的含量例如可以為1質量%以上、5質量%以上或10質量%以上。就容易抑制短路之觀點而言,以第1接著劑層的總質量為基準,(A)成分的含量例如可以為80質量%以下、70質量%以下或60質量%以下。就該等觀點而言,以第1接著劑層的總質量為基準,(A)成分的含量例如可以為1~80質量%、5~70質量%或10~60質量%。From the viewpoint of being able to further improve the conductivity, the content of the component (A) may be, for example, 1 mass % or more, 5 mass % or more, or 10 mass % or more based on the total mass of the first adhesive layer. From the viewpoint of easily suppressing short circuits, the content of the component (A) may be, for example, 80 mass % or less, 70 mass % or less, or 60 mass % or less based on the total mass of the first adhesive layer. From these viewpoints, the content of the component (A) may be, for example, 1 to 80 mass %, 5 to 70 mass %, or 10 to 60 mass % based on the total mass of the first adhesive layer.

就可獲得穩定之連接電阻之觀點而言,第1接著劑層1中的(A)成分的粒子密度可以為100個/mm 2以上、1000個/mm 2以上、3000個/mm 2以上或5000個/mm 2以上。就提高相鄰之電極之間的絕緣性之觀點而言,第1接著劑層1中的(A)成分的粒子密度可以為100000個/mm 2以下、70000個/mm 2以下、50000個/mm 2以下或30000個/mm 2以下。 From the viewpoint of obtaining stable connection resistance, the particle density of the component (A) in the first adhesive layer 1 may be 100 particles/mm 2 or more, 1000 particles/mm 2 or more, 3000 particles/mm 2 or more, or 5000/ mm2 or more. From the viewpoint of improving the insulating properties between adjacent electrodes, the particle density of the component (A) in the first adhesive layer 1 may be 100,000 particles/mm 2 or less, 70,000 particles/mm 2 or less, and 50,000 particles/ mm 2 or less or 30,000 pieces/mm 2 or less.

[(B)成分:光固化性成分] 關於(B)成分,只要係藉由光照射而固化之成分(例如為樹脂成分),則並無特別限制,但是就連接電阻更優異之觀點而言,可以為具有自由基固化性之成分。(B)成分例如可以包含自由基聚合性化合物(以下,有時稱為“(B1)成分”。)及光自由基聚合起始劑(以下,有時稱為“(B2)成分”。)。(B)成分可以為由(B1)成分及(B2)成分組成的成分。 [(B) component: photocurable component] The component (B) is not particularly limited as long as it is a component that is cured by light irradiation (for example, a resin component), but may be a component having radical curability from the viewpoint of more excellent connection resistance. The (B) component may contain, for example, a radically polymerizable compound (hereinafter, sometimes referred to as "(B1) component") and a photoradical polymerization initiator (hereinafter, sometimes referred to as "(B2) component".) . (B) component may be a component consisting of (B1) component and (B2) component.

(B1)成分:自由基聚合性化合物 (B1)成分為具有藉由自由基進行反應之聚合性基(自由基聚合性基)之化合物(自由基聚合性化合物)。作為自由基聚合性基,例如可舉出(甲基)丙烯醯基、乙烯基、烯丙基、苯乙烯基、烯基、伸烯基、順丁烯二醯亞胺基等。就聚合之後,容易獲得所期望的熔融黏度,減少連接電阻的效果進一步提高,連接可靠性更優異之觀點而言,(B1)成分所具有之自由基聚合性基的數量(官能基數)可以為2個以上,就抑制聚合時的固化收縮之觀點而言,可以為10個以下。又,為了保持交聯密度與固化收縮的平衡,除了自由基聚合性基的數量在上述範圍內之化合物以外,還可以使用自由基聚合性基的數量在上述範圍外之化合物。 (B1) component: radically polymerizable compound (B1) component is a compound (radical polymerizable compound) which has a polymerizable group (radical polymerizable group) which reacts with a radical. As a radical polymerizable group, a (meth)acryloyl group, a vinyl group, an allyl group, a styryl group, an alkenyl group, an alkenyl group, a maleimide group, etc. are mentioned, for example. After the polymerization, the desired melt viscosity is easily obtained, the effect of reducing the connection resistance is further improved, and the connection reliability is more excellent, the number (functional group) of the radically polymerizable group that the component (B1) has can be Two or more, from the viewpoint of suppressing curing shrinkage during polymerization, may be 10 or less. Furthermore, in order to maintain the balance between the crosslinking density and curing shrinkage, in addition to the compound having the radical polymerizable group number within the above range, a compound having the radical polymerizable group number outside the above range may be used.

就抑制導電粒子的流動之觀點而言,例如,(B1)成分可以包含多官能(2官能以上)的(甲基)丙烯酸酯。多官能(2官能以上)的(甲基)丙烯酸酯可以為2官能的(甲基)丙烯酸酯,2官能的(甲基)丙烯酸酯可以為2官能的芳香族(甲基)丙烯酸酯。From the viewpoint of suppressing the flow of conductive particles, for example, the component (B1) may contain a polyfunctional (difunctional or higher) (meth)acrylate. The polyfunctional (more than bifunctional) (meth)acrylate may be a bifunctional (meth)acrylate, and the bifunctional (meth)acrylate may be a bifunctional aromatic (meth)acrylate.

作為多官能的(甲基)丙烯酸酯,例如,可舉出乙二醇二(甲基)丙烯酸酯、二乙二醇二(甲基)丙烯酸酯、三乙二醇二(甲基)丙烯酸酯、四乙二醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、丙二醇二(甲基)丙烯酸酯、二丙二醇二(甲基)丙烯酸酯、三丙二醇二(甲基)丙烯酸酯、四丙二醇二(甲基)丙烯酸酯、聚丙二醇二(甲基)丙烯酸酯、乙氧基化聚丙二醇二(甲基)丙烯酸酯、1,3-丁二醇二(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、3-甲基-1,5-戊二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、2-丁基-2-乙基-1,3-丙二醇二(甲基)丙烯酸酯、1,9-壬二醇二(甲基)丙烯酸酯、1,10-癸二醇二(甲基)丙烯酸酯、丙三醇二(甲基)丙烯酸酯、三環癸二甲醇(甲基)丙烯酸酯、乙氧基化2-甲基-1,3-丙二醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、乙氧基化三羥甲基丙烷三(甲基)丙烯酸酯、丙氧基化三羥甲基丙烷三(甲基)丙烯酸酯、乙氧基化丙氧基化三羥甲基丙烷三(甲基)丙烯酸酯、新戊四醇三(甲基)丙烯酸酯、乙氧基化新戊四醇三(甲基)丙烯酸酯、丙氧基化新戊四醇三(甲基)丙烯酸酯、乙氧基化丙氧基化新戊四醇三(甲基)丙烯酸酯、新戊四醇四(甲基)丙烯酸酯、乙氧基化新戊四醇四(甲基)丙烯酸酯、丙氧基化新戊四醇四(甲基)丙烯酸酯、乙氧基化丙氧基化新戊四醇四(甲基)丙烯酸酯、二三羥甲基丙烷四丙烯酸酯、二新戊四醇六(甲基)丙烯酸酯等脂肪族(甲基)丙烯酸酯;乙氧基化雙酚A型二(甲基)丙烯酸酯、丙氧基化雙酚A型二(甲基)丙烯酸酯、乙氧基化丙氧基化雙酚A型二(甲基)丙烯酸酯、乙氧基化雙酚F型二(甲基)丙烯酸酯、丙氧基化雙酚F型二(甲基)丙烯酸酯、乙氧基化丙氧基化雙酚F型二(甲基)丙烯酸酯、乙氧基化茀型二(甲基)丙烯酸酯(例如,9,9-雙[4-(2-丙烯醯氧基乙氧基)苯基]茀)、丙氧基化茀型二(甲基)丙烯酸酯、乙氧基化丙氧基化茀型二(甲基)丙烯酸酯等芳香族(甲基)丙烯酸酯;雙酚型環氧(甲基)丙烯酸酯、酚醛清漆型環氧(甲基)丙烯酸酯、甲酚酚醛清漆型環氧(甲基)丙烯酸酯等芳香族環氧(甲基)丙烯酸酯;己內酯改質三聚異氰酸三-(2-丙烯醯氧基乙酯)等異氰脲酸酯(甲基)丙烯酸酯等。Examples of polyfunctional (meth)acrylates include ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, and triethylene glycol di(meth)acrylate. , tetraethylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, dipropylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate ) acrylate, tetrapropylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, ethoxylated polypropylene glycol di(meth)acrylate, 1,3-butanediol di(meth)acrylate Acrylates, 1,4-butanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, 3-methyl-1,5-pentanediol di(meth)acrylate, 1,6-Hexanediol di(meth)acrylate, 2-butyl-2-ethyl-1,3-propanediol di(meth)acrylate, 1,9-nonanediol di(meth)acrylate Acrylates, 1,10-decanediol di(meth)acrylate, glycerol di(meth)acrylate, tricyclodecanedimethanol (meth)acrylate, ethoxylated 2-methyl- 1,3-Propanediol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, ethoxylated trimethylolpropane tri(meth)acrylate, propoxylated trimethylol Propane tri(meth)acrylate, ethoxylated propoxylated trimethylolpropane tri(meth)acrylate, neotaerythritol tri(meth)acrylate, ethoxylated neopentyltetrakis Alcohol tri(meth)acrylate, propoxylated neotaerythritol tri(meth)acrylate, ethoxylated propoxylated neotaerythritol tri(meth)acrylate, neotaerythritol tetra (Meth)acrylates, ethoxylated neotaerythritol tetra(meth)acrylate, propoxylated neotaerythritol tetra(meth)acrylate, ethoxylated propoxylated neopentyltetrakis Aliphatic (meth)acrylates such as alcohol tetra(meth)acrylate, ditrimethylolpropane tetraacrylate, dipivalerythritol hexa(meth)acrylate; ethoxylated bisphenol A-type dimethacrylate (Meth)acrylate, propoxylated bisphenol A di(meth)acrylate, ethoxylated propoxylated bisphenol A di(meth)acrylate, ethoxylated bisphenol F type di(meth)acrylate, propoxylated bisphenol F type di(meth)acrylate, ethoxylated propoxylated bisphenol F type di(meth)acrylate, ethoxylated type di(meth)acrylates (for example, 9,9-bis[4-(2-propenyloxyethoxy)phenyl]perylene), propoxylated perylene di(meth)acrylates, Aromatic (meth)acrylates such as ethoxylated propoxylated phenyl-type di(meth)acrylates; bisphenol-type epoxy (meth)acrylates, novolak-type epoxy (meth)acrylates , Aromatic epoxy (meth) acrylate such as cresol novolac epoxy (meth) acrylate; Cyanurate (meth)acrylate, etc.

就兼具減少連接電阻的效果和抑制粒子流動之觀點而言,以(B1)成分的總質量為基準,多官能(2官能以上)的(甲基)丙烯酸酯的含量例如可以為40~100質量%、50~100質量%或60~100質量%。In terms of both the effect of reducing the connection resistance and the suppression of particle flow, the content of the polyfunctional (bifunctional or more) (meth)acrylate based on the total mass of the component (B1) can be, for example, 40 to 100. mass %, 50 to 100 mass %, or 60 to 100 mass %.

(B1)成分除了多官能(2官能以上)的(甲基)丙烯酸酯以外,還可以包含單官能的(甲基)丙烯酸酯。作為單官能的(甲基)丙烯酸酯,例如,可舉出(甲基)丙烯酸;(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸三級丁酯、(甲基)丙烯酸丁氧乙酯、(甲基)丙烯酸異戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛庚酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸癸酯2-(甲基)丙烯酸羥乙酯、(甲基)丙烯酸2-羥丙酯、3-氯-2-羥丙基(甲基)丙烯酸酯、(甲基)丙烯酸2-羥丁酯、甲氧基聚乙二醇(甲基)丙烯酸酯、乙氧基聚乙二醇(甲基)丙烯酸酯、甲氧基聚丙二醇(甲基)丙烯酸酯、乙氧基聚丙二醇(甲基)丙烯酸酯、單(2-(甲基)丙烯醯氧乙基)琥珀酸酯等脂肪族(甲基)丙烯酸酯;(甲基)丙烯酸苄酯、(甲基)丙烯酸苯酯、鄰聯苯(甲基)丙烯酸酯、1-(甲基)丙烯酸萘酯、2-(甲基)丙烯酸萘酯、(甲基)丙烯酸苯氧乙酯、對異丙苯基苯氧乙基(甲基)丙烯酸酯、鄰苯基苯氧乙基(甲基)丙烯酸酯、1-萘氧乙基(甲基)丙烯酸酯、2-萘氧乙基(甲基)丙烯酸酯、苯氧基聚乙二醇(甲基)丙烯酸酯、壬基苯氧基聚乙二醇(甲基)丙烯酸酯、苯氧基聚丙二醇(甲基)丙烯酸酯、2-羥基-3-苯氧丙基(甲基)丙烯酸酯、2-羥基-3-(鄰苯基苯氧基)丙基(甲基)丙烯酸酯、2-羥基-3-(1-萘氧基)丙基(甲基)丙烯酸酯、2-羥基-3-(2-萘氧基)丙基(甲基)丙烯酸酯、雙酚A型環氧(甲基)丙烯酸酯等芳香族(甲基)丙烯酸酯;(甲基)丙烯酸環氧丙酯等具有環氧基之(甲基)丙烯酸酯、3,4-環氧環己基甲基(甲基)丙烯酸酯等具有脂環式環氧基之(甲基)丙烯酸酯、(3-乙基氧雜環丁烷-3-基)甲基(甲基)丙烯酸酯等具有氧雜環丁烷基之(甲基)丙烯酸酯等。The (B1) component may contain a monofunctional (meth)acrylate in addition to the polyfunctional (bifunctional or more) (meth)acrylate. As monofunctional (meth)acrylate, for example, (meth)acrylic acid; methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, (meth)acrylate Isobutyl acrylate, tertiary butyl (meth)acrylate, butoxyethyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, 2-ethyl (meth)acrylate Hexyl (meth)acrylate, heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate 2-(meth)acrylate hydroxyethyl, (meth)acrylate ) 2-hydroxypropyl acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, methoxypolyethylene glycol (meth)acrylate, ethyl acetate Oxypolyethylene glycol (meth)acrylate, methoxypolypropylene glycol (meth)acrylate, ethoxypolypropylene glycol (meth)acrylate, mono(2-(meth)acryloyloxyethyl) ) Aliphatic (meth)acrylates such as succinate; benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, naphthyl 1-(meth)acrylate, Naphthyl 2-(meth)acrylate, Phenoxyethyl (meth)acrylate, p-Cumylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthoxyethyl (meth)acrylate, 2-naphthoxyethyl (meth)acrylate, phenoxy polyethylene glycol (meth)acrylate, nonylphenoxy polyethylene glycol ( Meth)acrylate, phenoxy polypropylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2-hydroxy-3-(o-phenylphenoxy)propane (meth)acrylate, 2-hydroxy-3-(1-naphthyloxy)propyl (meth)acrylate, 2-hydroxy-3-(2-naphthyloxy)propyl (meth)acrylate Aromatic (meth)acrylates such as esters and bisphenol A epoxy (meth)acrylates; (meth)acrylates with epoxy groups such as glycidyl (meth)acrylate, 3,4- (Meth)acrylate having an alicyclic epoxy group such as epoxycyclohexylmethyl (meth)acrylate, (3-ethyloxetan-3-yl)methyl (meth)acrylic acid (Meth)acrylate etc. which have an oxetanyl group, such as an ester.

以(B1)成分的總質量為基準,單官能的(甲基)丙烯酸酯的含量例如可以為0~60質量%、0~50質量%或0~40質量%。The content of the monofunctional (meth)acrylate may be, for example, 0 to 60 mass %, 0 to 50 mass %, or 0 to 40 mass % based on the total mass of the (B1) component.

(B)成分的固化物例如可以具有藉由除了自由基以外者進行反應之聚合性基。藉由除了自由基以外者進行反應之聚合性基例如可以為藉由陽離子進行反應之陽離子聚合性基。作為陽離子聚合性基,例如,可舉出環氧丙基等環氧基、環氧環己基甲基等脂環式環氧基、乙基氧雜環丁烷基甲基等氧雜環丁烷基等。具有藉由除了自由基以外者進行反應之聚合性基之(B)成分的固化物例如能夠藉由使用具有環氧基之(甲基)丙烯酸酯、具有脂環式環氧基之(甲基)丙烯酸酯、具有氧雜環丁烷基之(甲基)丙烯酸酯等具有藉由除了自由基以外者進行反應之聚合性基之(甲基)丙烯酸酯作為(B)成分來導入。(B) The hardened|cured material of a component may have the polymerizable group which reacts by the thing other than a radical, for example. The polymerizable group that reacts by something other than a radical may be, for example, a cationic polymerizable group that reacts by a cation. Examples of cationically polymerizable groups include epoxy groups such as glycidyl groups, alicyclic epoxy groups such as epoxycyclohexylmethyl groups, and oxetane groups such as ethyloxetanylmethyl groups. Base et al. The cured product of the component (B) having a polymerizable group that reacts by something other than a radical can be obtained by using, for example, a (meth)acrylate having an epoxy group, a (methyl) having an alicyclic epoxy group. ) The (meth)acrylate which has a polymerizable group which reacts by a thing other than a radical, such as an acrylate and the (meth)acrylate which has an oxetane group, is introduce|transduced as (B) component.

作為具有藉由除了自由基以外者進行反應之聚合性基之(甲基)丙烯酸酯,就使自由基聚合性化合物與後述之熱固化性成分進行交聯,在連接時形成更牢固的連接部之觀點而言,可以使用由下述式(1)表示之化合物。 [化學式5]

Figure 02_image001
As a (meth)acrylate having a polymerizable group that reacts by something other than a radical, the radically polymerizable compound and the thermosetting component to be described later are cross-linked to form a stronger connection portion at the time of connection From a viewpoint, the compound represented by following formula (1) can be used. [Chemical formula 5]
Figure 02_image001

式(1)中,R 1表示氫原子或甲基,X表示碳數1~3的烷二基。作為碳數1~3的烷二基,例如,可舉出亞甲基、伸乙基、伸丙基等。作為由上述式(1)表示之化合物的具體例,可舉出3,4-環氧環己基甲基(甲基)丙烯酸酯。 In formula (1), R 1 represents a hydrogen atom or a methyl group, and X represents an alkanediyl group having 1 to 3 carbon atoms. As a C1-C3 alkanediyl group, a methylene group, an ethylidene group, a propylidene group, etc. are mentioned, for example. As a specific example of the compound represented by the said formula (1), 3, 4- epoxycyclohexyl methyl (meth)acrylate is mentioned.

就抑制聚合時的固化收縮之觀點而言,具有藉由除了自由基以外者進行反應之聚合性基之自由基聚合性化合物(例如(甲基)丙烯酸酯)可以與不具有藉由除了自由基以外者進行反應之聚合性基之自由基聚合性化合物(例如(甲基)丙烯酸酯)倂用。就提高可靠性之觀點而言,具有藉由除了自由基以外者進行反應之聚合性基之自由基聚合性化合物相對於(B1)成分的總質量之質量比(具有藉由除了自由基以外者進行反應之聚合性基之自由基聚合性化合物的質量(裝入量)/(B1)成分的總質量(裝入量))例如可以為0以上、0.1以上、0.2以上或0.3以上,可以為0.7以下、0.6以下、0.5以下或0.4以下,亦可以為0~0.7、0.1~0.6、0.2~0.5或0.3~0.4。就進一步抑制聚合時的固化收縮之觀點而言,具有藉由自由基以外者進行反應之聚合性基之(甲基)丙烯酸酯相對於不具有藉由除了自由基以外者進行反應之聚合性基之(甲基)丙烯酸酯之質量比可以在上述範圍內。From the viewpoint of suppressing curing shrinkage during polymerization, a radically polymerizable compound (such as (meth)acrylate) having a polymerizable group that reacts by means of other than radicals can be combined with Radical polymerizable compounds (such as (meth)acrylates) of polymerizable groups other than those that react can be used. From the viewpoint of improving reliability, the mass ratio of the radically polymerizable compound having a polymerizable group that reacts by means other than radicals relative to the total mass of the component (B1) (having radicals other than radicals) The mass of the radically polymerizable compound of the polymerizable group to be reacted (charge amount)/(B1) the total mass of the component (charge amount)) may be, for example, 0 or more, 0.1 or more, 0.2 or more, or 0.3 or more, and may be 0.7 or less, 0.6 or less, 0.5 or less, or 0.4 or less, and may be 0 to 0.7, 0.1 to 0.6, 0.2 to 0.5, or 0.3 to 0.4. From the viewpoint of further suppressing curing shrinkage during polymerization, (meth)acrylates having a polymerizable group that reacts with other than radicals are compared to those that do not have a polymerizable group that reacts with other than radicals. The mass ratio of the (meth)acrylate can be within the above range.

(B1)成分除了多官能(2官能以上)及單官能的(甲基)丙烯酸酯以外,還可以包含其他自由基聚合性化合物。作為其他自由基聚合性化合物,例如,可舉出順丁烯二醯亞胺化合物、乙烯基醚化合物、烯丙基化合物、苯乙烯衍生物、丙烯醯胺衍生物、亞醯胺(Nadiimide)衍生物等。以(B1)成分的總質量為基準,其他自由基聚合性化合物的含量例如可以為0~40質量%。The component (B1) may contain other radically polymerizable compounds in addition to polyfunctional (bifunctional or more) and monofunctional (meth)acrylates. Examples of other radically polymerizable compounds include maleimide compounds, vinyl ether compounds, allyl compounds, styrene derivatives, acrylamide derivatives, and Nadiimide derivatives. things etc. The content of other radically polymerizable compounds may be, for example, 0 to 40 mass % based on the total mass of the (B1) component.

(B2)成分:光自由基聚合起始劑 (B2)成分為藉由照射包括150~750nm的範圍內的波長之光、較佳為包括254~405nm的範圍內的波長之光、進一步較佳為包括365nm的波長之光(例如,紫外光)而產生自由基之光聚合起始劑(光潛伏性自由基產生劑)。關於(B2)成分,可以單獨使用1種,亦可以組合使用複數種。 (B2) Component: photo-radical polymerization initiator The component (B2) is obtained by irradiating light with a wavelength within a range of 150 to 750 nm, preferably with light with a wavelength within a range of 254 to 405 nm, and more preferably with light with a wavelength of 365 nm (for example, ultraviolet light). ) to generate a free radical photopolymerization initiator (photolatent free radical generator). (B2) component may be used individually by 1 type, and may be used in combination of a plurality of types.

(B2)成分藉由光而分解並產生游離自由基。亦即,(B2)成分為藉由從外部施加光能而產生自由基之化合物。(B2)成分可以為具有肟酯結構、雙咪唑結構、吖啶結構、α-胺基烷基苯酮結構、胺基二苯基酮結構、N-苯基甘胺酸結構、醯基氧化膦結構、苄基二甲基縮酮結構、α-羥基烷基苯酮結構等結構之化合物。關於(B2)成分,可以單獨使用1種,亦可以組合使用複數種。The component (B2) is decomposed by light to generate free radicals. That is, (B2) component is a compound which generates a radical by external application of light energy. (B2) Component may have oxime ester structure, bisimidazole structure, acridine structure, α-aminoalkylphenone structure, aminodiphenylketone structure, N-phenylglycine structure, acylphosphine oxide Structure, benzyl dimethyl ketal structure, α-hydroxyalkyl phenone structure and other structures. (B2) component may be used individually by 1 type, and may be used in combination of a plurality of types.

就進一步抑制導電粒子的流動,進一步提高捕獲率之觀點及進一步抑制連接後的剝離,進一步抑制連接電阻的上升之觀點而言,(B2)成分可以為具有肟酯結構之化合物。就相同的觀點而言,具有肟酯結構之化合物可以為由下述式(I)表示之化合物。 [化學式6]

Figure 02_image010
The (B2) component may be a compound having an oxime ester structure from the viewpoints of further suppressing the flow of conductive particles, further increasing the capture rate, and further suppressing peeling after connection and further suppressing the rise in connection resistance. From the same viewpoint, the compound having an oxime ester structure may be a compound represented by the following formula (I). [Chemical formula 6]
Figure 02_image010

式(I)中,R 2、R 3及R 4分別獨立地表示氫原子、碳數1~20的烷基或包含芳香族系烴基之有機基團。 In formula (I), R 2 , R 3 and R 4 each independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, or an organic group including an aromatic hydrocarbon group.

作為具有肟酯結構之化合物的具體例,可舉出1-苯基-1,2-丁二酮-2-(鄰甲氧基羰基)肟、1-苯基-1,2-丙二酮-2-(鄰甲氧基羰基)肟、1-苯基-1,2-丙二酮-2-(鄰乙氧基羰基)肟、1-苯基-1,2-丙二酮-2-鄰苯甲醯肟、1,3-二苯基丙三酮-2-(鄰乙氧基羰基)肟、1-苯基-3-乙氧基丙三酮-2-(鄰苯甲醯基)肟、1,2-辛二酮,1-[4-(苯硫基)苯基-,2-(鄰苯甲醯肟)]、乙酮,1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]-,1-(鄰乙醯肟)等。在使用這樣的高活性的肟酯系光自由基聚合起始劑時,即使在(B1)成分物的摻合量少的情形下亦能夠充分地進行交聯。Specific examples of the compound having an oxime ester structure include 1-phenyl-1,2-butanedione-2-(o-methoxycarbonyl)oxime and 1-phenyl-1,2-propanedione -2-(o-methoxycarbonyl) oxime, 1-phenyl-1,2-propanedione-2-(o-ethoxycarbonyl) oxime, 1-phenyl-1,2-propanedione-2 - o-Benzyl oxime, 1,3-diphenylglycerol-2-(o-ethoxycarbonyl) oxime, 1-phenyl-3-ethoxy glycerol-2-(o-benzyl glycerol) base) oxime, 1,2-octanedione, 1-[4-(phenylthio)phenyl-,2-(o-benzyl oxime)], ethanone, 1-[9-ethyl-6- (2-methylbenzyl)-9H-carbazol-3-yl]-, 1-(o-acetoxime) and the like. When such a highly active oxime ester type photo-radical polymerization initiator is used, even when the compounding quantity of (B1) component is small, bridge|crosslinking can fully advance.

就抑制導電粒子的流動之觀點而言,相對於(B1)成分100質量份,(B2)成分的含量例如可以為0.1~10質量份、0.3~7質量份或0.5~5質量份。From the viewpoint of suppressing the flow of the conductive particles, the content of the component (B2) may be, for example, 0.1 to 10 parts by mass, 0.3 to 7 parts by mass, or 0.5 to 5 parts by mass relative to 100 parts by mass of the (B1) component.

就抑制導電粒子的流動之觀點而言,相對於第1接著劑層中的(A)成分以外的成分的總量100質量份,(B)成分的固化物的含量例如可以為1質量份以上、5質量份以上或10質量份以上。就在低壓安裝中顯現低電阻之觀點而言,相對於第1接著劑層中的(A)成分以外的成分的總量100質量份,(B)成分的固化物的含量例如可以為30質量份以下、25質量份以下或20質量份以下。就該等觀點而言,相對於第1接著劑層中的(A)成分以外的成分的總量100質量份,(B)成分的固化物的含量例如可以為1~30質量份、5~25質量份或10~20質量份。另外,用以形成第1接著劑層之組成物或組成物層中的(B)成分的含量(組成物或組成物層的總質量基準)可以與上述範圍相同。From the viewpoint of suppressing the flow of the conductive particles, the content of the cured product of the component (B) may be, for example, 1 part by mass or more with respect to 100 parts by mass of the total amount of components other than the component (A) in the first adhesive layer. , 5 parts by mass or more or 10 parts by mass or more. The content of the cured product of the component (B) may be, for example, 30 parts by mass relative to 100 parts by mass of the total amount of components other than the component (A) in the first adhesive layer from the viewpoint of developing low resistance in low-voltage mounting. part or less, 25 parts by mass or less, or 20 parts by mass or less. From these viewpoints, the content of the cured product of the (B) component may be, for example, 1 to 30 parts by mass, 5 to 25 parts by mass or 10 to 20 parts by mass. In addition, the content of the (B) component in the composition for forming the first adhesive layer or the composition layer (based on the total mass of the composition or the composition layer) may be the same as the above-mentioned range.

[(C)成分:熱固化性成分] 關於(C)成分,只要係藉由熱而固化之成分(例如樹脂成分),則並無特別限制,但是在(B)成分為具有自由基固化性之成分的情形下,就保管安定性等的觀點而言,(C)成分可以為不具有自由基固化性之成分。在(B)成分為具有自由基固化性之成分,並且(C)成分亦為具有自由基固化性之成分之情形下,在保管時有可能藉由殘留在第1接著劑層中之自由基進行熱固化性成分的固化。作為不具有自由基固化性之成分,可舉出具有陽離子固化性之成分(例如,陽離子聚合性化合物及熱陽離子聚合起始劑)及具有陰離子固化性之成分(陰離子聚合性化合物及熱陰離子聚合起始劑)。 [(C)component: thermosetting component] The component (C) is not particularly limited as long as it is a component (for example, a resin component) that is cured by heat. However, when the component (B) is a component having radical curability, the storage stability and the like are required. From the viewpoint of (C) component, the component which does not have radical curability may be sufficient. In the case where the component (B) is a component having radical curability, and the component (C) is also a component having radical curability, there is a possibility that the radicals remaining in the first adhesive layer may be caused by the radicals during storage. The curing of the thermosetting component is performed. Examples of components not having radical curability include components having cationic curability (eg, cationically polymerizable compounds and thermal cationic polymerization initiators) and components having anionic curability (anionic polymerizable compounds and thermal anionic polymerization initiators) starter).

就連接電阻更優異的觀點而言,(C)成分可以為具有陽離子固化性之成分,例如,可以包含陽離子聚合性化合物(以下,有時稱為“(C1)成分”。)及熱陽離子聚合起始劑(以下,有時稱為“(C2)成分”。)。(C)成分可以為僅由(C1)成分及(C2)成分組成的成分。From the viewpoint of being more excellent in connection resistance, the component (C) may be a component having cationic curability, for example, may contain a cationically polymerizable compound (hereinafter, sometimes referred to as "component (C1)") and thermal cationic polymerization. Starter (Hereinafter, sometimes referred to as "(C2) component".). The (C) component may be a component consisting only of the (C1) component and the (C2) component.

(C1)成分:陽離子聚合性化合物 (C1)成分為藉由熱與(C2)成分進行反應而交聯之化合物。另外,(C1)成分係指不具有自由基聚合性基之化合物,(C1)成分不包含在(B1)成分中。關於(C1)成分,可以單獨使用1種,亦可以組合使用複數種。 (C1) component: cationic polymerizable compound The (C1) component is a compound that is crosslinked by the reaction of the (C2) component with heat. In addition, (C1) component means the compound which does not have a radically polymerizable group, (C1) component is not included in (B1) component. As for the (C1) component, one type may be used alone, or a plurality of types may be used in combination.

就減少連接電阻的效果進一步提高,連接可靠性更優異的觀點而言,(C1)成分可以為具有環狀醚基之化合物。在具有環狀醚基之化合物中,使用選自由氧雜環丁烷化合物及脂環式環氧化合物組成的組中之至少1種之情形下,減少連接電阻的效果趨於進一步提高。就容易獲得所期望的熔融黏度之觀點而言,(C1)成分可以包含至少1種氧雜環丁烷化合物及至少1種脂環式環氧化合物雙方。The (C1) component may be a compound having a cyclic ether group from the viewpoint that the effect of reducing the connection resistance is further improved and the connection reliability is more excellent. In the compound having a cyclic ether group, when at least one selected from the group consisting of an oxetane compound and an alicyclic epoxy compound is used, the effect of reducing the connection resistance tends to be further enhanced. From the viewpoint of easily obtaining a desired melt viscosity, the component (C1) may contain both at least one oxetane compound and at least one alicyclic epoxy compound.

作為(C1)成分的氧雜環丁烷化合物,只要係具有氧雜環丁烷基,並且不具有自由基聚合性基之化合物,則能夠沒有特別限制地使用。作為氧雜環丁烷化合物的市售品,例如,可舉出ETERNACOLL OXBP(商品名稱,4,4’-雙[(3-乙基-3-氧雜環丁烷基)甲氧基甲基]聯苯,UBE INDUSTRIES,LTD.製造)、OXSQ、OXT-121、OXT-221、OXT-101、OXT-212(商品名稱,TOAGOSEI CO., LTD.製造)等。該等可以單獨使用1種化合物,亦可以組合使用複數種。The oxetane compound as the component (C1) can be used without particular limitation as long as it has an oxetane group and does not have a radical polymerizable group. Examples of commercially available oxetane compounds include ETERNACOLL OXBP (trade name, 4,4'-bis[(3-ethyl-3-oxetanyl)methoxymethyl) ] Biphenyl, manufactured by UBE INDUSTRIES, LTD.), OXSQ, OXT-121, OXT-221, OXT-101, OXT-212 (trade name, manufactured by TOAGOSEI CO., LTD.), etc. One of these compounds may be used alone, or a plurality of them may be used in combination.

作為(C1)成分的脂環式環氧化合物,只要係具有脂環式環氧基(例如,環氧環己基),並且不具有自由基聚合性基之化合物,則能夠沒有特別限制地使用。作為脂環式環氧化合物的市售品,除了CELLOXIDE8010(商品名稱,雙-7-氧雜雙環[4.1.0]庚烷,Daicel Corporation製造)以外,例如,還可舉出EHPE3150、EHPE3150CE、CELLOXIDE2021P、CELLOXIDE2081(商品名稱,Daicel Corporation製造)等。該等可以單獨使用1種化合物,亦可以組合使用複數種。作為(C1)成分,還能夠使用雙酚A型環氧樹脂、雙酚F型環氧樹脂等具有芳香族系烴基之環氧化合物(例如,Mitsubishi Chemical Corporation製造的商品名稱“jER1010”、“YL983U”等)。就減少連接電阻的效果進一步提高,連接可靠性更優異的觀點而言,具有芳香族系烴基之環氧化合物可以與脂環式環氧化合物組合使用。The alicyclic epoxy compound of the component (C1) can be used without particular limitation as long as it has an alicyclic epoxy group (eg, epoxycyclohexyl group) and does not have a radically polymerizable group. Examples of commercially available alicyclic epoxy compounds include CELLOXIDE8010 (trade name, bis-7-oxabicyclo[4.1.0]heptane, manufactured by Daicel Corporation), for example, EHPE3150, EHPE3150CE, and CELLOXIDE2021P , CELLOXIDE2081 (trade name, manufactured by Daicel Corporation), etc. One of these compounds may be used alone, or a plurality of them may be used in combination. As the component (C1), epoxy compounds having aromatic hydrocarbon groups such as bisphenol A epoxy resins and bisphenol F epoxy resins (eg, trade names "jER1010", "YL983U" manufactured by Mitsubishi Chemical Corporation) can also be used "Wait). From the viewpoint that the effect of reducing the connection resistance is further improved and the connection reliability is more excellent, the epoxy compound having an aromatic hydrocarbon group can be used in combination with an alicyclic epoxy compound.

(C2)成分:熱陽離子聚合起始劑 (C2)成分為藉由加熱產生酸等而開始聚合之熱聚合起始劑(熱潛伏性陽離子產生劑)。(C2)成分可以為由陽離子和陰離子構成之鹽化合物。關於(C2)成分,例如,可舉出具有BF 4 -、BR 4 -(R表示被2個以上的氟原子或2個以上的三氟甲基取代之苯基。)、PF 6 -、SbF 6 -、AsF 6 -等陰離子之锍鹽、鏻鹽、銨鹽、重氮鹽、碘鹽、苯胺鹽、吡啶鹽等鎓鹽等。該等可以單獨使用1種,亦可以組合使用複數種。 (C2) Component: Thermal Cationic Polymerization Initiator The (C2) component is a thermal polymerization initiator (thermal latent cation generator) that starts polymerization by generating an acid or the like by heating. The component (C2) may be a salt compound composed of a cation and an anion. The component (C2) includes, for example, BF 4 - , BR 4 - (R represents a phenyl group substituted with two or more fluorine atoms or two or more trifluoromethyl groups.), PF 6 - , and SbF Sulfonium salts, phosphonium salts, ammonium salts, diazonium salts, iodonium salts, aniline salts, pyridinium salts and other onium salts of anions such as 6 - and AsF 6 - . These may be used individually by 1 type, and may be used in combination of a plurality of types.

就快速固化性的觀點而言,(C2)成分例如可以為具有包含硼作為構成元素之陰離子之鹽化合物。作為這樣的鹽化合物,例如,可舉出具有BF 4 -或BR 4 -(R表示被2個以上的氟原子或2個以上的三氟甲基取代之苯基。)之鹽化合物。包含硼作為構成元素之陰離子可以為BR 4 -,更具體而言,可以為四(五氟苯基)硼酸鹽。 From the viewpoint of rapid curability, the component (C2) may be, for example, a salt compound having an anion containing boron as a constituent element. Examples of such salt compounds include salt compounds having BF 4 - or BR 4 - (R represents a phenyl group substituted with two or more fluorine atoms or two or more trifluoromethyl groups). The anion containing boron as a constituent element may be BR 4 , and more specifically, tetrakis(pentafluorophenyl)borate.

就保存安定性的觀點而言,(C2)成分可以為由下述式(II)或下述式(III)表示之具有陽離子之鹽化合物。 [化學式7]

Figure 02_image012
[化學式8]
Figure 02_image014
From the viewpoint of storage stability, the component (C2) may be a salt compound having a cation represented by the following formula (II) or the following formula (III). [Chemical formula 7]
Figure 02_image012
[Chemical formula 8]
Figure 02_image014

式(II)中,R 5及R 6分別獨立地表示氫原子、碳數1~20的烷基或者包含具有取代基或未經取代的芳香族系烴基之有機基團,R 7表示碳數1~6的烷基。 In formula (II), R 5 and R 6 each independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, or an organic group containing a substituted or unsubstituted aromatic hydrocarbon group, and R 7 represents a carbon number 1-6 alkyl groups.

就兼具保存安定性和低溫活性之觀點而言,由式(II)表示之具有陽離子之鹽化合物可以為芳香族锍鹽化合物(芳香族锍鹽型熱酸產生劑)。亦即,式(II)中的R 5及R 6中的至少一者可以為包含具有取代基或未經取代的芳香族系烴基之有機基團。由式(II)表示之具有陽離子之鹽化合物中的陰離子可以為包含銻作為構成元素之陰離子,例如,可以為六氟銻酸鹽(六氟銻酸)。 The salt compound having a cation represented by formula (II) may be an aromatic sulfonium salt compound (aromatic sulfonium salt type thermal acid generator) from the viewpoint of having both storage stability and low-temperature activity. That is, at least one of R 5 and R 6 in formula (II) may be an organic group including a substituted or unsubstituted aromatic hydrocarbon group. The anion in the salt compound having a cation represented by formula (II) may be an anion containing antimony as a constituent element, and for example, may be hexafluoroantimonate (hexafluoroantimonic acid).

作為由式(II)表示之具有陽離子之化合物的具體例,可舉出1-萘基甲基-對羥基苯基锍六氟銻酸鹽(SANSHIN CHEMICAL INDUSTRY CO.,LTD.製造,SI-60主劑)等。Specific examples of the compound having a cation represented by the formula (II) include 1-naphthylmethyl-p-hydroxyphenylsulfonium hexafluoroantimonate (manufactured by SANSHIN CHEMICAL INDUSTRY CO., LTD., SI-60 main agent) etc.

式(III)中,R 8及R 9分別獨立地表示氫原子、碳數1~20的烷基或者包含具有取代基或未經取代的芳香族系烴基之有機基團,R 10及R 11分別獨立地表示碳數1~6的烷基。 In formula (III), R 8 and R 9 each independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, or an organic group containing a substituted or unsubstituted aromatic hydrocarbon group, R 10 and R 11 Each independently represents an alkyl group having 1 to 6 carbon atoms.

由式(III)表示之具有陽離子之鹽化合物(四級銨鹽型熱酸產生劑)具有針對可能會引起對陽離子固化的固化阻礙之物質的耐性,因此例如可以為苯胺鹽化合物。亦即,式(III)中的R 8及R 9中的至少一者可以為包含具有取代基或未經取代的芳香族系烴基之有機基團。作為苯胺鹽化合物,例如,可舉出N,N-二甲基苯胺鹽、N,N-二乙基苯胺鹽等N,N-二烷基苯胺鹽等。由式(III)表示之具有陽離子之鹽化合物中的陰離子可以為包含硼作為構成元素之陰離子,例如,可以為四(五氟苯基)硼酸鹽。 The salt compound having a cation (quaternary ammonium salt type thermal acid generator) represented by the formula (III) has resistance to a substance that may cause curing inhibition to cationic curing, and therefore can be, for example, an aniline salt compound. That is, at least one of R 8 and R 9 in formula (III) may be an organic group including a substituted or unsubstituted aromatic hydrocarbon group. As an aniline salt compound, N,N- dialkylaniline salts, such as N,N- dimethylaniline salt and N,N- diethylaniline salt, etc. are mentioned, for example. The anion in the salt compound having a cation represented by the formula (III) may be an anion containing boron as a constituent element, for example, may be tetrakis(pentafluorophenyl)borate.

由式(III)表示之具有陽離子之化合物可以為具有包含硼作為構成元素之陰離子之苯胺鹽。作為這樣的鹽化合物的市售品,例如,可舉出CXC-1821(商品名稱,King Industries, Inc.製造)等。The compound having a cation represented by the formula (III) may be an aniline salt having an anion containing boron as a constituent element. As a commercial item of such a salt compound, CXC-1821 (trade name, manufactured by King Industries, Inc.) etc. are mentioned, for example.

就確保用以形成第1接著劑層之接著劑薄膜的形成性及固化性之觀點而言,相對於(C1)成分100質量份,(C2)成分的含量例如可以為0.1~20質量份、1~18質量份、3~15質量份或5~12質量份。From the viewpoint of securing the formability and curability of the adhesive film for forming the first adhesive layer, the content of the component (C2) may be, for example, 0.1 to 20 parts by mass relative to 100 parts by mass of the component (C1). 1-18 mass parts, 3-15 mass parts, or 5-12 mass parts.

就確保用以形成第1接著劑層之接著劑薄膜的固化性之觀點而言,相對於第1接著劑層中的(A)成分以外的成分的總量100質量份,(C)成分的含量例如可以為5質量份以上、10質量份以上、15質量份以上或20質量份以上。就確保用以形成第1接著劑層之接著劑薄膜的形成性之觀點而言,相對於第1接著劑層中的(A)成分以外的成分的總量100質量份,(C)成分的含量例如可以為70質量份以下、60質量份以下、50質量份以下或40質量份以下。就該等觀點而言,相對於第1接著劑層中的(A)成分以外的成分的總量100質量份,(C)成分的含量例如可以為5~70質量份、10~60質量份、15~50質量份或20~40質量份。另外,組成物或組成物層中的(C)成分的含量(組成物或組成物層的總質量基準)可以與上述範圍相同。From the viewpoint of securing the curability of the adhesive film for forming the first adhesive layer, the amount of the component (C) is 100 parts by mass of the total amount of components other than the component (A) in the first adhesive layer. The content may be, for example, 5 parts by mass or more, 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more. From the viewpoint of securing the formability of the adhesive film for forming the first adhesive layer, the amount of the component (C) relative to 100 parts by mass of the total amount of components other than the The content may be, for example, 70 parts by mass or less, 60 parts by mass or less, 50 parts by mass or less, or 40 parts by mass or less. From these viewpoints, the content of the component (C) can be, for example, 5 to 70 parts by mass and 10 to 60 parts by mass with respect to 100 parts by mass of the total amount of components other than the (A) component in the first adhesive layer. , 15 to 50 parts by mass or 20 to 40 parts by mass. Moreover, content of (C)component in a composition or a composition layer (the basis of the total mass of a composition or a composition layer) may be the same as the said range.

[其他成分] 第1接著劑層1除了(A)成分、(B)成分的固化物及(C)成分以外,還可以含有其他成分。作為其他成分,例如,可舉出熱塑性樹脂(以下,有時稱為“(D)成分”。)、偶合劑(以下,有時稱為“(E)成分”。)及填充材料(以下,有時稱為“(F)成分”。)等。 [other ingredients] The first adhesive layer 1 may contain other components in addition to the cured product of the (A) component and the (B) component and the (C) component. As other components, for example, thermoplastic resins (hereinafter, sometimes referred to as "(D) components"), coupling agents (hereinafter, sometimes referred to as "(E) components"), and fillers (hereinafter, may be referred to as "(E) components".) Sometimes referred to as "(F)ingredients".) etc.

作為(D)成分,例如,可舉出苯氧基樹脂、聚酯樹脂、聚醯胺樹脂、聚胺酯樹脂、聚酯胺酯樹脂、丙烯酸橡膠、環氧樹脂(在25℃下為固態)等。該等可以單獨使用1種,亦可以組合使用複數種。藉由含有(B)成分及(C)成分之組成物還含有(D)成分,能夠輕易地由該組成物形成組成物層(進而為第1接著劑層1)。作為上述苯氧基樹脂,例如,可舉出茀型苯氧基樹脂、雙酚A/雙酚F共聚型苯氧基樹脂等。As (D)component, a phenoxy resin, a polyester resin, a polyamide resin, a polyurethane resin, a polyester urethane resin, an acrylic rubber, an epoxy resin (solid at 25 degreeC) etc. are mentioned, for example. These may be used individually by 1 type, and may be used in combination of a plurality of types. When the composition containing the (B) component and the (C) component further contains the (D) component, the composition layer (further, the first adhesive layer 1 ) can be easily formed from the composition. As said phenoxy resin, a phenoxy resin of a phenoxy resin, a bisphenol A/bisphenol F copolymerization type phenoxy resin, etc. are mentioned, for example.

就安裝時的樹脂排除性的觀點而言,(D)成分的重量平均分子量(Mw)例如可以為5000~200000、10000~100000、20000~80000或40000~60000。另外,Mw係指藉由凝膠滲透層析法(GPC)進行測量並使用基於標準聚苯乙烯之検量線進行換算之值。The weight average molecular weight (Mw) of the component (D) may be, for example, 5,000 to 200,000, 10,000 to 100,000, 20,000 to 80,000, or 40,000 to 60,000, from the viewpoint of resin repulsion at the time of mounting. In addition, Mw means a value measured by gel permeation chromatography (GPC) and converted using a sizing line based on standard polystyrene.

相對於第1接著劑層中的(A)成分以外的成分的總量100質量份,(D)成分的含量例如可以為1質量份以上、5質量份以上、10質量份以上或20質量份以上,可以為70質量份以下、60質量份以下、50質量份以下或40質量份以下,亦可以為1~70質量份、5~60質量份、10~50質量份或20~40質量份。另外,用以形成第1接著劑層之組成物或組成物層中的(D)成分的含量(組成物或組成物層的總質量基準)可以與上述範圍相同。The content of (D) component may be, for example, 1 part by mass or more, 5 parts by mass or more, 10 parts by mass or more, or 20 parts by mass with respect to 100 parts by mass of the total amount of components other than (A) component in the first adhesive layer Above, may be 70 parts by mass or less, 60 parts by mass or less, 50 parts by mass or less, or 40 parts by mass or less, or may be 1-70 parts by mass, 5-60 parts by mass, 10-50 parts by mass, or 20-40 parts by mass . In addition, the content of the component (D) in the composition for forming the first adhesive layer or the composition layer (based on the total mass of the composition or the composition layer) may be the same as the above-mentioned range.

作為(E)成分,例如,可舉出具有(甲基)丙烯醯基、巰基、胺基、咪唑基、環氧基等有機官能基之矽烷偶合劑(γ-環氧丙氧基丙基三甲氧基矽烷等)、四烷氧基矽烷等矽烷化合物、四烷氧基鈦酸酯衍生物、聚二烷基鈦酸酯衍生物等。該等可以單獨使用1種,亦可以組合使用複數種。藉由第1接著劑層1含有(E)成分,能夠進一步提高接著性。(E)成分例如可以為矽烷偶合劑。As the component (E), for example, a silane coupling agent (γ-glycidoxypropyltrimethyl) having an organic functional group such as a (meth)acryloyl group, a mercapto group, an amino group, an imidazole group and an epoxy group can be mentioned. oxysilane, etc.), silane compounds such as tetraalkoxysilane, tetraalkoxytitanate derivatives, polydialkyltitanate derivatives, and the like. These may be used individually by 1 type, and may be used in combination of a plurality of types. The adhesiveness can be further improved by containing the (E) component in the first adhesive layer 1 . The (E) component may be, for example, a silane coupling agent.

相對於第1接著劑層中的(A)成分以外的成分的總量100質量份,(E)成分的含量例如可以為0.1~10質量份。另外,用以形成第1接著劑層之組成物或組成物層中的(E)成分的含量(組成物或組成物層的總質量基準)可以與上述範圍相同。The content of the (E) component may be, for example, 0.1 to 10 parts by mass with respect to 100 parts by mass of the total amount of components other than the (A) component in the first adhesive layer. In addition, the content of the (E) component in the composition for forming the first adhesive layer or the composition layer (based on the total mass of the composition or the composition layer) may be the same as the above-mentioned range.

作為(F)成分,例如,可舉出非導電性填料(例如,非導電粒子)。(F)成分可以為無機填料及有機填料中的任一種。作為無機填料,例如,可舉出二氧化矽微粒、氧化鋁微粒、二氧化矽-氧化鋁微粒、氧化鈦微粒、氧化鋯微粒等金屬氧化物微粒;金屬氮化物微粒等無機微粒。作為有機填料,例如,可舉出矽酮微粒、甲基丙烯酸酯-丁二烯-苯乙烯微粒、丙烯酸-矽酮微粒、聚醯胺微粒、聚醯亞胺微粒等有機微粒。該等可以單獨使用1種,亦可以組合使用複數種。(F)成分例如可以為二氧化矽微粒。相對於第1接著劑層中的(A)成分以外的成分的總量100質量份,(F)成分的含量例如可以為0.1~10質量份。另外,用以形成第1接著劑層之組成物或組成物層中的(F)成分的含量(組成物或組成物層的總質量基準)可以與上述範圍相同。As (F) component, a non-conductive filler (for example, non-conductive particle) is mentioned, for example. The component (F) may be either an inorganic filler or an organic filler. Examples of the inorganic filler include metal oxide fine particles such as silica fine particles, alumina fine particles, silica-alumina fine particles, titanium oxide fine particles, and zirconia fine particles; and inorganic fine particles such as metal nitride fine particles. Examples of the organic filler include organic fine particles such as silicone fine particles, methacrylate-butadiene-styrene fine particles, acryl-silicone fine particles, polyamide fine particles, and polyimide fine particles. These may be used individually by 1 type, and may be used in combination of a plurality of types. The component (F) may be, for example, silica fine particles. The content of the component (F) may be, for example, 0.1 to 10 parts by mass with respect to 100 parts by mass of the total amount of components other than the component (A) in the first adhesive layer. In addition, the content of the (F) component in the composition for forming the first adhesive layer or the composition layer (based on the total mass of the composition or the composition layer) may be the same as the above-mentioned range.

第1接著劑層1還可以含有軟化劑、促進劑、劣化抑制劑、著色劑、阻燃劑、觸變減黏劑等其他添加劑作為其他成分。相對於第1接著劑層中的(A)成分以外的成分的總量100質量份,其他添加劑的含量例如可以為0.1~10質量份。另外,用以形成第1接著劑層之組成物或組成物層中的其他添加劑的含量(組成物或組成物層的總質量基準)可以與上述範圍相同。The first adhesive layer 1 may contain other additives such as softeners, accelerators, deterioration inhibitors, colorants, flame retardants, and thixotropic viscosity reducers as other components. The content of other additives may be, for example, 0.1 to 10 parts by mass with respect to 100 parts by mass of the total amount of components other than the (A) component in the first adhesive layer. In addition, the composition for forming the first adhesive layer or the content of other additives in the composition layer (based on the total mass of the composition or the composition layer) may be the same as the above-mentioned range.

就製造電路連接用接著劑薄膜時的導電粒子4的轉印性的觀點而言,第1接著劑層1的厚度d1例如可以為0.5μm以上、1.0μm以上或2.0μm以上。就在連接時能夠進一步有效率地捕獲導電粒子之觀點而言,第1接著劑層1的厚度d1例如可以為5.0μm以下、4.0μm以下或3.0μm以下。該等觀點而言,第1接著劑層1的厚度d1例如可以為0.5~5.0μm、1.0~4.0μm或2.0~3.0μm。另外,如圖1所示,在導電粒子4的一部分從第1接著劑層1的表面暴露(例如,向第2接著劑層2側突出)之情形下,從第1接著劑層1中的與第2接著劑層2側相反的一側的面1a到位於相鄰之導電粒子4、4的分開部分之第1接著劑層1與第2接著劑層2的邊界S的距離(在圖1中由d1表示之距離)為第1接著劑層1的厚度,導電粒子4的暴露部分不包括在第1接著劑層1的厚度中。The thickness d1 of the first adhesive layer 1 may be, for example, 0.5 μm or more, 1.0 μm or more, or 2.0 μm or more, from the viewpoint of transferability of the conductive particles 4 when the adhesive film for circuit connection is produced. The thickness d1 of the first adhesive layer 1 may be, for example, 5.0 μm or less, 4.0 μm or less, or 3.0 μm or less, from the viewpoint of being able to capture conductive particles more efficiently during connection. From these viewpoints, the thickness d1 of the first adhesive layer 1 may be, for example, 0.5 to 5.0 μm, 1.0 to 4.0 μm, or 2.0 to 3.0 μm. In addition, as shown in FIG. 1 , when a part of the conductive particles 4 is exposed from the surface of the first adhesive layer 1 (for example, protrudes to the side of the second adhesive layer 2 ), the conductive particles 4 are removed from the surface of the first adhesive layer 1 . The distance from the surface 1a on the opposite side to the second adhesive layer 2 to the boundary S between the first adhesive layer 1 and the second adhesive layer 2 at the separated portion of the adjacent conductive particles 4 and 4 (see Fig. The distance represented by d1 in 1 ) is the thickness of the first adhesive layer 1 , and the exposed portion of the conductive particles 4 is not included in the thickness of the first adhesive layer 1 .

第1接著劑層1的厚度d1例如藉由如下方式來求出:用2個玻璃(厚度:1mm左右)夾持接著劑薄膜,用由雙酚A型環氧樹脂(商品名稱:jER811,Mitsubishi Chemical Corporation製造)100g和固化劑(商品名稱:Epomount固化劑,Refine Tec Ltd.製造)10g組成的樹脂組成物注型之後,使用研磨機進行截面研磨,並使用掃描型電子顯微鏡(SEM,商品名稱:SE-8020,Hitachi High-Tech Science Corporation製造)進行測量。The thickness d1 of the first adhesive layer 1 is obtained, for example, by sandwiching an adhesive film between two glasses (thickness: about 1 mm), and using bisphenol A epoxy resin (trade name: jER811, Mitsubishi) Chemical Corporation) 100 g and a curing agent (trade name: Epomount curing agent, manufactured by Refine Tec Ltd.) 10 g of a resin composition after injection molding, cross-section grinding was performed using a grinder, and a scanning electron microscope (SEM, trade name) was used. : SE-8020, manufactured by Hitachi High-Tech Science Corporation) was measured.

<第2接著劑層> 第2接著劑層2例如為由不具有導電性之成分(絕緣性樹脂成分)構成之絕緣性接著劑層。第2接著劑層2至少含有(C)成分。 <Second adhesive layer> The second adhesive layer 2 is, for example, an insulating adhesive layer composed of a non-conductive component (insulating resin component). The second adhesive layer 2 contains at least the (C) component.

第2接著劑層2中的(C)成分(亦即,第2熱固化性成分)中所包含之成分(例如,(C1)成分、(C2)成分等)的詳細內容(種類、組合等)與第1接著劑層1中的(C)成分(亦即,第1熱固化性成分)中所包含之成分的詳細內容相同,因此在此省略詳細說明。第2熱固化性成分可以與第1熱固化性成分相同,亦可以不同。Details (types, combinations, etc.) of components (for example, (C1) component, (C2) component, etc.) contained in the (C) component (that is, the second thermosetting component) in the second adhesive layer 2 ) are the same as the details of the components contained in the (C) component (that is, the first thermosetting component) in the first adhesive layer 1 , so detailed descriptions are omitted here. The second thermosetting component may be the same as or different from the first thermosetting component.

就維持可靠性之觀點而言,以第2接著劑層的總質量為基準,(C)成分的含量例如可以為5質量%以上、10質量%以上、15質量%以上或20質量%以上。就防止作為供給形態的一種態樣之捲軸上的樹脂滲出不良情況之觀點而言,以第2接著劑層的總質量為基準,(C)成分的含量例如可以為70質量%以下、60質量%以下、50質量%以下或40質量%以下。就該等觀點而言,以第2接著劑層的總質量為基準,(C)成分的含量例如可以為5~70質量%、10~15質量%、15~50質量%或20~40質量%。From the viewpoint of maintaining reliability, the content of component (C) may be, for example, 5 mass % or more, 10 mass % or more, 15 mass % or more, or 20 mass % or more based on the total mass of the second adhesive layer. From the viewpoint of preventing resin exudation failure on the reel, which is one aspect of the supply form, the content of the component (C) may be, for example, 70% by mass or less and 60% by mass based on the total mass of the second adhesive layer. % or less, 50 mass % or less, or 40 mass % or less. From these viewpoints, the content of the component (C) may be, for example, 5 to 70 mass %, 10 to 15 mass %, 15 to 50 mass %, or 20 to 40 mass % based on the total mass of the second adhesive layer. %.

第2接著劑層2還可以含有第1接著劑層1中的其他成分((D)成分、(E)成分、(F)成分及其他添加劑等)。其他成分的較佳的態樣與第1接著劑層1的較佳的態樣相同。The second adhesive layer 2 may further contain other components (component (D), component (E), component (F), other additives, and the like) in the first adhesive layer 1 . The preferable aspect of the other components is the same as the preferable aspect of the first adhesive layer 1 .

以第2接著劑層的總質量為基準,(D)成分的含量例如可以為1質量%以上、5質量%以上或10質量%以上,可以為80質量%以下、60質量%以下或40質量%以下,亦可以為1~80質量%、5~60質量%或10~40質量%。The content of component (D) may be, for example, 1 mass % or more, 5 mass % or more, or 10 mass % or more, and may be 80 mass % or less, 60 mass % or less, or 40 mass % based on the total mass of the second adhesive layer. % or less, 1-80 mass %, 5-60 mass %, or 10-40 mass % may be sufficient.

以第2接著劑層的總質量為基準,(E)成分的含量例如可以為0.1~10質量%。The content of the (E) component may be, for example, 0.1 to 10 mass % based on the total mass of the second adhesive layer.

以第2接著劑層的總質量為基準,(F)成分的含量例如可以為1質量%以上、10質量%以上或30質量%以上,可以為90質量%以下、70質量%以下或50質量%以下,亦可以為1~90質量%以下、10~70質量%以下或30~50質量%。The content of component (F) may be, for example, 1 mass % or more, 10 mass % or more, or 30 mass % or more, 90 mass % or less, 70 mass % or less, or 50 mass % based on the total mass of the second adhesive layer. % or less, 1-90 mass % or less, 10-70 mass % or less, or 30-50 mass % may be sufficient.

以第2接著劑層的總質量為基準,其他添加劑的含量例如可以為0.1~10質量%。The content of other additives may be, for example, 0.1 to 10 mass % based on the total mass of the second adhesive layer.

第2接著劑層2的厚度d2可以依據連接之電路構件的電極的高度等而適當地設定。就能夠充分地填充電極之間的空間而密封電極,可獲得更良好的連接可靠性之觀點而言,第2接著劑層2的厚度d2例如可以為2μm以上、5μm以上或10μm以上,可以為30μm以下、20μm以下或15μm以下,亦可以為2~30μm、5~20μm或10~15μm。另外,如圖1所示,在導電粒子4的一部分從第1接著劑層1的表面暴露(例如,向第2接著劑層2側突出)之情形下,從第2接著劑層2中的與第1接著劑層1側相反的一側的面2a到位於相鄰之導電粒子4、4的分開部分之第1接著劑層1與第2接著劑層2的邊界S的距離(在圖1中由d2表示之距離)為第2接著劑層2的厚度。第2接著劑層2的厚度d2例如能夠以與上述之第1接著劑層1的厚度d1之測量方法相同的方式求出。The thickness d2 of the second adhesive layer 2 can be appropriately set according to the height of the electrodes of the circuit member to be connected, and the like. The thickness d2 of the second adhesive layer 2 may be, for example, 2 μm or more, 5 μm or more, or 10 μm or more, from the viewpoint that the space between the electrodes can be sufficiently filled to seal the electrodes and better connection reliability can be obtained. 30 μm or less, 20 μm or less, or 15 μm or less, and may be 2 to 30 μm, 5 to 20 μm, or 10 to 15 μm. In addition, as shown in FIG. 1 , when a part of the conductive particles 4 is exposed from the surface of the first adhesive layer 1 (for example, protrudes toward the second adhesive layer 2 side), the conductive particles 4 are removed from the surface of the second adhesive layer 2 . The distance from the surface 2a on the side opposite to the first adhesive layer 1 to the boundary S between the first adhesive layer 1 and the second adhesive layer 2 at the separated portion of the adjacent conductive particles 4 and 4 (see Fig. The distance represented by d2 in 1 ) is the thickness of the second adhesive layer 2 . The thickness d2 of the second adhesive layer 2 can be obtained, for example, in the same manner as the method of measuring the thickness d1 of the first adhesive layer 1 described above.

電路連接用接著劑薄膜10A的厚度(構成電路連接用接著劑薄膜10A之所有層的厚度的總計)例如可以為2.5μm以上、6μm以上或12μm以上,可以為35μm以下、24μm以下或18μm以下,亦可以為2.5~35μm、6~24μm或12~24μm。The thickness of the adhesive film for circuit connection 10A (the total thickness of all layers constituting the adhesive film for circuit connection 10A) may be, for example, 2.5 μm or more, 6 μm or more, or 12 μm or more, and may be 35 μm or less, 24 μm or less, or 18 μm or less, It may be 2.5 to 35 μm, 6 to 24 μm, or 12 to 24 μm.

電路連接用接著劑薄膜10A為用於電路連接之接著劑薄膜。電路連接用接著劑薄膜10A可以具有各向異性導電性,亦可以不具有各向異性導電性。亦即,電路連接用接著劑薄膜可以為各向異性導電性的接著劑薄膜,亦可以為非各向異性導電性(例如各向同性導電性)的接著劑薄膜。電路連接用接著劑薄膜10A配置於具有第1電極之第1電路構件的設置有該第1電極之面與具有第2電極之第2電路構件的設置有該第2電極之面之間,並且可以用於如下:將包含第1電路構件、電路連接用接著劑薄膜10A及第2電路構件之積層體在積層體的厚度方向上按壓之狀態下進行加熱,藉此將第1電極與第2電極經由導電粒子(或者導電粒子的熔融固化物)相互電連接並且將第1電路構件與第2電路構件接著。另外,上述之“各向異性導電性”係指在加壓方向上導通,在非加壓方向上保持絕緣性。The adhesive film for circuit connection 10A is an adhesive film for circuit connection. The adhesive film 10A for circuit connection may or may not have anisotropic conductivity. That is, the adhesive film for circuit connection may be an anisotropically conductive adhesive film, or may be a non-anisotropically conductive (for example, isotropically conductive) adhesive film. The adhesive film 10A for circuit connection is arranged between the surface of the first circuit member having the first electrode on which the first electrode is provided and the surface of the second circuit member having the second electrode on which the second electrode is provided, and It can be used to heat the laminate including the first circuit member, the adhesive film 10A for circuit connection, and the second circuit member in a state where the laminate is pressed in the thickness direction of the laminate, whereby the first electrode and the second electrode are heated. The electrodes are electrically connected to each other via the conductive particles (or the molten solidified product of the conductive particles), and the first circuit member and the second circuit member are bonded to each other. In addition, the above-mentioned "anisotropic conductivity" means conduction in the pressing direction and maintaining insulation in the non-pressing direction.

依據電路連接用接著劑薄膜10A,一邊藉由熱固化性成分確保連接時的樹脂的排除性,一邊藉由光固化性成分的固化物抑制連接時的導電粒子的流動性,從而能夠提高連接之電極之間的導電粒子的捕獲率。因此,依據電路連接用接著劑薄膜10A,能夠獲得短路的發生少,並且電極之間的導通性亦優異的連接結構體。According to the adhesive film 10A for circuit connection, the heat-curable component ensures the repulsion of the resin during the connection, and the cured product of the photocurable component suppresses the fluidity of the conductive particles during the connection, so that the connection quality can be improved. Capture rate of conductive particles between electrodes. Therefore, according to the adhesive film 10A for circuit connection, it is possible to obtain a connected structure with little occurrence of short circuits and excellent conductivity between electrodes.

以上,對一實施形態的電路連接用接著劑薄膜進行了說明,但是本發明並不限定於上述實施形態。As mentioned above, although the adhesive agent film for circuit connection which concerns on one Embodiment was demonstrated, this invention is not limited to the said embodiment.

例如,如圖4中所示之電路連接用接著劑薄膜10B般,電路連接用接著劑薄膜可以在第1接著劑層1的與第2接著劑層2相反的一側具備含有(C)成分(熱固化性成分)之第3接著劑層5。第3接著劑層5例如為由不具有導電性之成分(絕緣性樹脂成分)構成之絕緣性接著劑層。電路連接用接著劑薄膜10B積層有第3接著劑層5,除此以外,具有與電路連接用接著劑薄膜10A相同的結構。For example, like the adhesive film for circuit connection 10B shown in FIG. 4 , the adhesive film for circuit connection may have the component (C) on the opposite side of the first adhesive layer 1 to the second adhesive layer 2 . The third adhesive layer 5 of (thermosetting component). The third adhesive layer 5 is, for example, an insulating adhesive layer composed of a non-conductive component (insulating resin component). The circuit connection adhesive film 10B has the same structure as the circuit connection adhesive film 10A except that the third adhesive layer 5 is laminated.

第3接著劑層5中所含有之(C)成分(以下,還稱為“第3熱固化性成分”。)的詳細內容與上述之熱固化性成分相同。例如,第3熱固化性成分可以包含(C1)成分(亦即,陽離子聚合性化合物)及(C2)成分(亦即,熱陽離子聚合起始劑)。第3熱固化性成分中所使用之(C1)成分及(C2)成分與第1熱固化性成分中所使用之(C1)成分及(C2)成分相同,因此在此省略詳細說明。第3熱固化性成分可以與第1熱固化性成分相同,亦可以不同。第3熱固化性成分可以與第2熱固化性成分相同,亦可以不同。The details of the component (C) (hereinafter, also referred to as "third thermosetting component") contained in the third adhesive layer 5 are the same as those of the above-mentioned thermosetting component. For example, the third thermosetting component may contain the (C1) component (that is, the cationically polymerizable compound) and the (C2) component (that is, the thermal cationic polymerization initiator). The components (C1) and (C2) used in the third thermosetting component are the same as the components (C1) and (C2) used in the first thermosetting component, so detailed descriptions are omitted here. The third thermosetting component may be the same as or different from the first thermosetting component. The third thermosetting component may be the same as or different from the second thermosetting component.

就賦予良好的轉印性及耐剝離性之觀點而言,以第3接著劑層的總質量為基準,(C)成分的含量例如可以為5質量%以上、10質量%以上、15質量%以上或20質量%以上。就賦予良好的半切性及耐黏結性(抑制捲軸的樹脂滲出)之觀點而言,以第3接著劑層的總質量為基準,(C)成分的含量例如可以為70質量%以下、60質量%以下、50質量%以下或40質量%以下。就該等觀點而言,以第3接著劑層的總質量為基準,(C)成分的含量例如可以為5~70質量%、10~60質量%、15~50質量%或20~40質量%。From the viewpoint of imparting good transferability and peeling resistance, the content of the component (C) may be, for example, 5 mass % or more, 10 mass % or more, or 15 mass % based on the total mass of the third adhesive layer. or more or 20% by mass or more. From the viewpoint of imparting good half-cut properties and blocking resistance (resin bleed-out of the reel), the content of the component (C) may be, for example, 70 mass % or less and 60 mass % based on the total mass of the third adhesive layer. % or less, 50 mass % or less, or 40 mass % or less. From these viewpoints, the content of the component (C) may be, for example, 5 to 70 mass %, 10 to 60 mass %, 15 to 50 mass %, or 20 to 40 mass % based on the total mass of the third adhesive layer. %.

第3接著劑層5還可以含有第1接著劑層1中的其他成分。其他成分的較佳的態樣與第1接著劑層1的較佳的態樣相同。The third adhesive layer 5 may contain other components in the first adhesive layer 1 . The preferable aspect of the other components is the same as the preferable aspect of the first adhesive layer 1 .

以第3接著劑層的總質量為基準,(D)成分的含量例如可以為10質量%以上、20質量%以上或30質量%以上,可以為80質量%以下、70質量%以下或60質量%以下,亦可以為10~80質量%、20~70質量%或30~60質量%。The content of (D) component may be, for example, 10 mass % or more, 20 mass % or more, or 30 mass % or more, and may be 80 mass % or less, 70 mass % or less, or 60 mass % based on the total mass of the third adhesive layer. % or less, 10-80 mass %, 20-70 mass %, or 30-60 mass % may be sufficient.

以第3接著劑層的總質量為基準,(E)成分的含量例如可以為0.1~10質量%。The content of the (E) component may be, for example, 0.1 to 10 mass % based on the total mass of the third adhesive layer.

以第3接著劑層的總質量為基準,(F)成分的含量例如可以為1質量%以上、3質量%以上或5質量%以上,可以為50質量%以下、40質量%以下或30質量%以下,亦可以為1~50質量%、3~40質量%或5~30質量%。The content of the component (F) may be, for example, 1 mass % or more, 3 mass % or more, or 5 mass % or more, and may be 50 mass % or less, 40 mass % or less, or 30 mass % based on the total mass of the third adhesive layer. % or less, 1-50 mass %, 3-40 mass %, or 5-30 mass % may be sufficient.

以第3接著劑層的總質量為基準,其他添加劑的含量例如可以為0.1~10質量%。The content of other additives may be, for example, 0.1 to 10 mass % based on the total mass of the third adhesive layer.

第3接著劑層5的厚度d3可以依據接著之電路構件的電極的高度等而適當地設定。就能夠充分地填充電極之間的空間而密封電極,可獲得更良好的連接可靠性之觀點而言,第3接著劑層5的厚度d3例如可以為0.1μm以上、0.5μm以上或1.0μm以上,可以為10μm以下、5.0μm以下或2.5μm以下,亦可以為0.1~10μm、0.5~5.0μm或1.0~2.5μm。第3接著劑層5的厚度d3為從第3接著劑層5中的與第1接著劑層1側相反的一側的面5a到第1接著劑層1中的與第2接著劑層2側相反的一側的面1a的距離(在圖4中由d3表示之距離),例如,能夠以與上述之第1接著劑層1的厚度d1之測量方法相同的方式求出。The thickness d3 of the third adhesive layer 5 can be appropriately set according to the height of the electrodes of the circuit member to be followed, and the like. The thickness d3 of the third adhesive layer 5 may be, for example, 0.1 μm or more, 0.5 μm or more, or 1.0 μm or more, from the viewpoint that the space between the electrodes can be sufficiently filled to seal the electrodes and better connection reliability can be obtained. , may be 10 μm or less, 5.0 μm or less, or 2.5 μm or less, and may be 0.1 to 10 μm, 0.5 to 5.0 μm, or 1.0 to 2.5 μm. The thickness d3 of the third adhesive layer 5 is from the surface 5 a of the third adhesive layer 5 on the side opposite to the first adhesive layer 1 to the second adhesive layer 2 of the first adhesive layer 1 The distance (distance represented by d3 in FIG. 4 ) of the surface 1a on the opposite side can be obtained, for example, in the same manner as in the above-described method of measuring the thickness d1 of the first adhesive layer 1 .

在電路連接用接著劑薄膜具有除了第1接著劑層及第2接著劑層以外的層(例如,第3接著劑層)之情形下,電路連接用接著劑薄膜的厚度(構成電路連接用接著劑薄膜之所有層的厚度的總計)可以與上述之電路連接用接著劑薄膜10A的厚度可取之範圍相同。When the adhesive film for circuit connection has layers other than the first adhesive layer and the second adhesive layer (for example, the third adhesive layer), the thickness of the adhesive film for circuit connection (constituting the adhesive film for circuit connection) The sum of the thicknesses of all layers of the adhesive film) may be the same as the preferred range of the thickness of the above-mentioned adhesive film 10A for circuit connection.

<電路連接用接著劑薄膜之製造方法> 電路連接用接著劑薄膜之製造方法包括如下步驟:準備在表面具有複數個凹部並且在該複數個凹部的至少一部分配置有導電粒子之基體(準備步驟);藉由在基體的表面(形成有凹部之面)上設置含有光固化性成分及第1熱固化性成分之組成物層,將導電粒子轉印到組成物層(轉印步驟);藉由對組成物層照射光而形成含有複數個導電粒子、光固化性成分的固化物及第1熱固化性成分之第1接著劑層(光照射步驟);及在第1接著劑層的一個面上設置含有第2熱固化性成分之第2接著劑層(積層步驟)。 <Manufacturing method of adhesive film for circuit connection> The method for producing an adhesive film for circuit connection includes the steps of: preparing a substrate having a plurality of concave portions on the surface and arranging conductive particles on at least a part of the plurality of concave portions (preparation step); A composition layer containing a photocurable component and a first thermosetting component is arranged on the surface), and the conductive particles are transferred to the composition layer (transfer step); The conductive particle, the cured product of the photocurable component, and the first adhesive layer of the first thermosetting component (light irradiation step); and the first adhesive layer containing the second thermosetting component is provided on one surface of the first adhesive layer. 2 Adhesive layer (lamination step).

以下,例舉上述之電路連接用接著劑薄膜10A之製造方法,參閱圖5~圖10,對電路連接用接著劑薄膜之製造方法進行說明。Hereinafter, the manufacturing method of the adhesive film 10A for a circuit connection mentioned above is illustrated, referring FIG. 5-FIG. 10, the manufacturing method of the adhesive film for a circuit connection is demonstrated.

圖5係示意性地表示電路連接用接著劑薄膜10A之製造方法中所使用之基體的縱截面之圖。圖6係表示圖5的基體的凹部的截面形狀的變形例之圖。圖7係示意性地表示在圖5的基體的凹部配置有導電粒子4之狀態之剖面圖。圖8係示意性地表示準備步驟的一例之剖面圖。圖9係示意性地表示轉印步驟的一例之剖面圖。圖10係示意性地表示光照射步驟的一例之剖面圖。FIG. 5 is a diagram schematically showing a longitudinal section of a substrate used in a method of manufacturing the adhesive film 10A for circuit connection. FIG. 6 is a view showing a modification of the cross-sectional shape of the recessed portion of the base body of FIG. 5 . FIG. 7 is a cross-sectional view schematically showing a state in which the conductive particles 4 are arranged in the concave portion of the base of FIG. 5 . FIG. 8 is a cross-sectional view schematically showing an example of a preparation step. FIG. 9 is a cross-sectional view schematically showing an example of a transfer step. FIG. 10 is a cross-sectional view schematically showing an example of a light irradiation step.

(準備步驟) 在準備步驟中,首先,準備在表面具有複數個凹部7之基體6(參閱圖5)。基體6具有複數個凹部7。關於複數個凹部7,例如,以規定的圖案(例如,與電路構件的電極圖案相對應之圖案)規則地配置。在以規定的圖案配置有凹部7之情形下,將導電粒子4以規定的圖案轉印到組成物層。因此,可獲得以規定的圖案(如圖2及圖3所示之圖案)規則地配置有導電粒子4之電路連接用接著劑薄膜10A。 (preparatory steps) In the preparation step, first, the base body 6 (see FIG. 5 ) having a plurality of recesses 7 on the surface is prepared. The base body 6 has a plurality of recesses 7 . The plurality of recesses 7 are regularly arranged, for example, in a predetermined pattern (for example, a pattern corresponding to an electrode pattern of a circuit member). When the recesses 7 are arranged in a predetermined pattern, the conductive particles 4 are transferred to the composition layer in a predetermined pattern. Therefore, the adhesive film 10A for circuit connections in which the conductive particles 4 are regularly arranged in a predetermined pattern (the pattern shown in FIGS. 2 and 3 ) can be obtained.

如圖5所示,基體6的凹部7例如可以形成為開口面積從凹部7的底部7a側朝向基體6的表面6a側擴大之錐形。亦即,凹部7的底部7a的寬度(圖5中的寬度a)可以比凹部7的開口的寬度(圖5中的寬度b)窄。凹部7的尺寸(寬度a、寬度b、容積、錐角及深度等)能夠依據目標導電粒子的尺寸、電路連接用接著劑薄膜中的導電粒子的位置來設定。例如,凹部7的開口的寬度(寬度b)可以比導電粒子4的最大粒徑大,亦可以小於導電粒子的最大粒徑的2倍。As shown in FIG. 5 , the recessed portion 7 of the base body 6 may be formed, for example, in a tapered shape in which the opening area expands from the bottom 7a side of the recessed portion 7 toward the surface 6a side of the base body 6 . That is, the width of the bottom portion 7 a of the recessed portion 7 (width a in FIG. 5 ) may be narrower than the width of the opening of the recessed portion 7 (width b in FIG. 5 ). The dimensions (width a, width b, volume, taper angle, depth, etc.) of the concave portion 7 can be set according to the size of the target conductive particles and the position of the conductive particles in the adhesive film for circuit connection. For example, the width (width b) of the opening of the concave portion 7 may be larger than the maximum particle size of the conductive particles 4 , or may be smaller than twice the maximum particle size of the conductive particles.

基體6的縱截面中的凹部7的形狀(凹部7的截面形狀)例如可以為如圖6(a)~(h)所示之形狀。圖6(a)~(h)中所示之任意截面形狀均係凹部7的開口的寬度(寬度b)成為截面形狀中的最大寬度。藉此,容易取出配置在凹部7中之導電粒子,作業性得到提高。The shape of the recessed portion 7 in the longitudinal section of the base body 6 (the cross-sectional shape of the recessed portion 7 ) may be, for example, the shape shown in FIGS. 6( a ) to ( h ). In any of the cross-sectional shapes shown in FIGS. 6( a ) to ( h ), the width (width b) of the opening of the concave portion 7 is the maximum width in the cross-sectional shape. Thereby, the conductive particles arranged in the concave portion 7 can be easily taken out, and the workability is improved.

凹部7的開口的形狀可以為圓形、橢圓形、三角形、四邊形、多邊形等。The shape of the opening of the concave portion 7 may be a circle, an ellipse, a triangle, a quadrangle, a polygon, or the like.

基體6的凹部7能夠藉由微影術、機械加工等公知的方法來形成。在該等方法中,能夠自由地設計凹部的尺寸及形狀。The concave portion 7 of the base body 6 can be formed by a known method such as lithography and machining. In these methods, the size and shape of the recess can be freely designed.

作為構成基體6之材料,例如,能夠使用矽、各種陶瓷、玻璃、不鏽鋼等金屬等無機材料、以及各種樹脂等有機材料。如後述,在本實施形態之製造方法中,藉由在基體6的凹部7內形成導電粒子4而能夠在基體6的凹部7配置導電粒子4,但是此時,基體6可以具有在用於形成導電粒子4之微粒(例如焊料微粒)的熔融溫度下不會變質之耐熱性。As the material constituting the substrate 6, for example, inorganic materials such as silicon, various ceramics, glass, and metals such as stainless steel, and organic materials such as various resins can be used. As will be described later, in the manufacturing method of the present embodiment, the conductive particles 4 can be arranged in the recesses 7 of the base 6 by forming the conductive particles 4 in the recesses 7 of the base 6 . In this case, the base 6 may have The heat resistance of the particles (eg, solder particles) of the conductive particles 4 that do not deteriorate at the melting temperature.

接著,在基體6的複數個凹部7的至少一部分(一部分或全部)配置(收納)導電粒子4(上述(A)成分)(參閱圖7)。Next, the conductive particles 4 (component (A) described above) are arranged (stored) in at least a part (part or all) of the plurality of recesses 7 of the base body 6 (see FIG. 7 ).

導電粒子4之配置方法並無特別限定。配置方法可以為乾式、濕式中的任一種。例如,將導電粒子4配置於基體6的表面6a上,使用刮板或微黏結輥,刮擦基體6的表面6a,藉此能夠去除多餘的導電粒子4的同時,在凹部7配置導電粒子4。在凹部7的開口的寬度b比凹部7的深度大的情形下,導電粒子有時會從凹部7的開口飛出。若使用刮板,則從凹部7的開口飛出之導電粒子被去除。作為去除多餘的導電粒子之方法,還可舉出噴吹壓縮空氣、用不織布或纖維束刮擦基體6的表面6a之方法。該等方法與刮板相比物理力弱,因此在處理作為導電粒子之容易變形之粒子(例如焊料粒子)之方面為較佳。The arrangement method of the conductive particles 4 is not particularly limited. The arrangement method can be either dry or wet. For example, by arranging the conductive particles 4 on the surface 6a of the base body 6, and scraping the surface 6a of the base body 6 with a scraper or a micro-bonding roller, the excess conductive particles 4 can be removed, and the conductive particles 4 can be placed in the recesses 7 at the same time. . When the width b of the opening of the concave portion 7 is larger than the depth of the concave portion 7 , the conductive particles may fly out from the opening of the concave portion 7 . When a squeegee is used, the conductive particles flying out from the opening of the recessed portion 7 are removed. As a method of removing excess conductive particles, a method of blowing compressed air and scraping the surface 6a of the base 6 with a nonwoven cloth or a fiber bundle can also be mentioned. These methods have weaker physical force than squeegees, and are therefore preferable in handling easily deformable particles (eg, solder particles) as conductive particles.

在作為導電粒子4使用焊料粒子之情形下,可以藉由在基體6的凹部7內形成導電粒子4(焊料粒子)來將導電粒子4配置於凹部7。具體而言,例如,如圖8(a)~(b)所示,將用以形成導電粒子4之微粒8(焊料微粒)收納於凹部7內之後,使收納於凹部7之微粒8熔融,藉此能夠在凹部7內形成導電粒子4。收納於凹部7內之微粒8藉由熔融合而為一,並藉由表面張力進行球狀化。此時,在與凹部7的底部7a的接觸部中,熔融之金屬呈追隨底部7a之形狀。因此,例如,在凹部7的底部7a為如圖8(a)所示之平坦的形狀的情形下,導電粒子4成為在圖8(b)所示之表面的一部分具有平面部4a者。When using solder particles as the conductive particles 4 , the conductive particles 4 can be arranged in the recesses 7 by forming the conductive particles 4 (solder particles) in the recesses 7 of the base 6 . Specifically, for example, as shown in FIGS. 8( a ) to ( b ), after the particles 8 (solder particles) for forming the conductive particles 4 are accommodated in the concave portion 7 , the particles 8 accommodated in the concave portion 7 are melted, Thereby, the conductive particles 4 can be formed in the recesses 7 . The microparticles 8 accommodated in the concave portion 7 are united by fusion and spheroidized by surface tension. At this time, in the contact portion with the bottom portion 7a of the recessed portion 7, the molten metal has a shape that follows the bottom portion 7a. Therefore, for example, when the bottom portion 7a of the recessed portion 7 is a flat shape as shown in FIG. 8( a ), the conductive particle 4 has a flat portion 4 a in a part of the surface shown in FIG. 8( b ).

關於微粒8,只要能夠收納於凹部7內即可,粒度分佈的偏差大亦可以,形狀變形亦可以。The fine particles 8 only need to be able to be accommodated in the concave portion 7, the particle size distribution may have a large variation, and the shape may be deformed.

作為使收納於凹部7之微粒8熔融之方法,可舉出將微粒8加熱至形成該微粒之材料的熔點以上之方法。關於微粒8,因氧化被膜的影響,即使在熔點以上的溫度下進行加熱,有時亦不會熔融、不會潤濕擴展或不會合而為一。因此,可以將微粒8暴露在還原氣氛下,去除微粒8的表面氧化皮膜之後,加熱至微粒8的熔點以上的溫度。藉此,容易使微粒8熔融,潤濕擴展,使其合而為一。就相同的觀點而言,微粒8的熔融可以在還原氣氛下進行。As a method of melting the microparticles 8 accommodated in the concave portion 7, a method of heating the microparticles 8 to the melting point or higher of the material forming the microparticles can be mentioned. The fine particles 8 may not be melted, not spread by wetting, or may not coalesce even if they are heated at a temperature higher than the melting point due to the influence of the oxide film. Therefore, the fine particles 8 may be exposed to a reducing atmosphere to remove the oxide film on the surfaces of the fine particles 8 , and then heated to a temperature equal to or higher than the melting point of the fine particles 8 . Thereby, the fine particles 8 are easily melted, wetted and spread, and integrated into one. From the same viewpoint, the melting of the fine particles 8 may be performed in a reducing atmosphere.

關於設為還原氣氛之方法,只要係可獲得上述效果之方法,則並無特別限定,例如有使用氫氣、氫自由基、甲酸氣體等之方法。例如,藉由使用氫還原爐、氫自由基還原爐、甲酸還原爐或該等的輸送爐或連續爐,能夠在還原氣氛下使微粒8熔融。該等裝置可以在爐內具備加熱裝置、填充惰性氣體(氮氣、氬氣等)之腔室、將腔室內設為真空之機構等,藉此更容易控制還原氣體。又,若能夠將腔室內設為真空,則能夠在微粒8熔融及合而為一之後,藉由減壓去除空隙,能夠獲得連接穩定性進一步優異的導電粒子4。The method of setting it as a reducing atmosphere is not particularly limited as long as the above-mentioned effects can be obtained, and for example, there are methods using hydrogen gas, hydrogen radicals, formic acid gas, and the like. For example, by using a hydrogen reduction furnace, a hydrogen radical reduction furnace, a formic acid reduction furnace, or these conveyance furnaces or continuous furnaces, the fine particles 8 can be melted under a reducing atmosphere. These apparatuses can be equipped with heating means in the furnace, a chamber filled with inert gas (nitrogen, argon, etc.), a mechanism for setting a vacuum in the chamber, etc., thereby making it easier to control the reducing gas. In addition, if the inside of the chamber can be evacuated, the voids can be removed by reducing the pressure after the fine particles 8 are melted and integrated into one, and the conductive particles 4 with further excellent connection stability can be obtained.

關於微粒8的還原、溶解條件、溫度、爐內氣氛調整等配置文件,可以考慮微粒8的熔點、粒度、凹部的尺寸、基體6的材質等適當地設定。Profiles such as reduction, dissolution conditions, temperature, and furnace atmosphere adjustment of the microparticles 8 can be appropriately set in consideration of the melting point, particle size, size of the concave portion, and material of the substrate 6 of the microparticles 8 .

依據上述方法,能夠與微粒8的材質及形狀無關地,形成大致均勻的尺寸的導電粒子4。又,導電粒子4的尺寸及形狀取決於收納於凹部7之微粒8的量、凹部7的形狀等,因此藉由凹部7的設計(凹部的尺寸、形狀等的調整)能夠自由地設計導電粒子4的尺寸及形狀,能夠容易準備具有目標粒度分佈之導電粒子(例如,平均粒徑為1~30μm,並且粒徑的C.V.值為20%以下的導電粒子)。According to the above method, the conductive particles 4 of substantially uniform size can be formed regardless of the material and shape of the fine particles 8 . In addition, the size and shape of the conductive particles 4 depend on the amount of the particles 8 accommodated in the concave portion 7 , the shape of the concave portion 7 , and the like. Therefore, the conductive particle can be freely designed by the design of the concave portion 7 (adjustment of the size, shape, etc. of the concave portion). The size and shape of 4 can easily prepare conductive particles with a target particle size distribution (for example, conductive particles with an average particle size of 1 to 30 μm and a C.V. value of particle size of 20% or less).

上述方法尤其適於導電粒子4為銦系焊料粒子之情形。銦系焊料能夠藉由鍍敷析出,但是不易以粒子狀析出,為柔軟且不易處理之材料。但是,在上述方法中,藉由將銦系焊料微粒用作原料,能夠容易製造具有大致均勻的粒徑之銦系焊料粒子。The above method is especially suitable for the case where the conductive particles 4 are indium-based solder particles. Indium-based solder can be precipitated by plating, but is difficult to precipitate in the form of particles, and is a material that is soft and difficult to handle. However, in the above-described method, by using the indium-based solder fine particles as a raw material, indium-based solder particles having a substantially uniform particle diameter can be easily produced.

在將導電粒子4配置於凹部7之後,能夠在導電粒子4配置(收納)於凹部7之狀態下操作基體6。例如,在將基體6在導電粒子4配置(收納)於凹部7之狀態下進行傳送/保管等之情形下,能夠防止導電粒子4(特別是焊料粒子等柔軟的導電粒子)的變形。又,在導電粒子4配置(收納)於凹部7之狀態下,容易取出導電粒子4,因此還容易防止對導電粒子4進行回收/表面處理等時的變形。After the conductive particles 4 are arranged in the recesses 7 , the substrate 6 can be handled in a state where the conductive particles 4 are arranged (stored) in the recesses 7 . For example, when the substrate 6 is transported/stored in a state where the conductive particles 4 are arranged (stored) in the recesses 7 , deformation of the conductive particles 4 (especially soft conductive particles such as solder particles) can be prevented. In addition, since the conductive particles 4 are easily taken out in the state where the conductive particles 4 are arranged (stored) in the recesses 7 , it is also easy to prevent the conductive particles 4 from being deformed during collection, surface treatment, or the like.

(轉印步驟) 在轉印步驟中,藉由在基體6的表面(形成有凹部7之面)上設置含有光固化性成分(上述(B)成分)及第1熱固化性成分(上述(C)成分)之組成物層9,將導電粒子4轉印到組成物層9(參閱圖9)。 (transfer step) In the transfer step, by providing a photocurable component (the above-mentioned (B) component) and the first thermosetting component (the above-mentioned (C) component) on the surface of the base 6 (the surface on which the concave portion 7 is formed) The composition layer 9 transfers the conductive particles 4 to the composition layer 9 (see FIG. 9 ).

具體而言,首先,在支撐體11上形成含有(B)成分及(C)成分之組成物層9而獲得積層薄膜12之後,使基體6的形成有凹部7之面(基體6的表面)6a與積層薄膜12的組成物層9側的面(組成物層9的與支撐體11相反的一側的面9a)對置,使基體6與組成物層9靠近(參閱圖9(a))。接著,藉由將積層薄膜12與基體6貼合而使組成物層9與基體6的表面(形成有凹部7之面)6a接觸,將導電粒子4轉印到組成物層9。藉此,可獲得具備組成物層9和至少一部分被埋入組成物層9中之導電粒子4之粒子轉印層13(參閱圖9(b))。此時,在凹部7的底部係平坦的情形下,導電粒子4與凹部7的底部的形狀相對應地具有平面部4a,並以該平面部4a朝向與支撐體11相反的一側之狀態配置於組成物層9中。Specifically, first, the composition layer 9 containing the components (B) and (C) is formed on the support body 11 to obtain the laminated film 12 , and then the surface of the base body 6 on which the recesses 7 are formed (the surface of the base body 6 ) 6a is opposed to the surface of the laminate film 12 on the side of the composition layer 9 (the surface 9a of the composition layer 9 on the opposite side of the support body 11 ), and the base 6 and the composition layer 9 are brought close to each other (see FIG. 9( a ) ). Next, the conductive particles 4 are transferred to the composition layer 9 by bonding the laminate film 12 to the base 6 so that the composition layer 9 is brought into contact with the surface (surface on which the recesses 7 are formed) 6 a of the base 6 . Thereby, the particle transfer layer 13 including the composition layer 9 and the conductive particles 4 at least partially embedded in the composition layer 9 can be obtained (see FIG. 9( b )). At this time, when the bottom of the concave portion 7 is flat, the conductive particles 4 have a flat portion 4 a corresponding to the shape of the bottom of the concave portion 7 , and the flat portion 4 a is disposed in a state where the flat portion 4 a faces the opposite side to the support body 11 . in the composition layer 9 .

組成物層9能夠使用清漆組成物(清漆狀的第1接著劑組成物)來形成,該清漆組成物藉由將(B)成分及(C)成分、以及依需要添加之其他成分在有機媒體中進行攪拌混合、混練等而使其溶解或分散來製備。具體而言,例如,使用氣刀塗佈機、輥塗機、敷贴器、缺角輪塗佈機、模塗佈機等,在支撐體11(例如實施了脫模處理之基材)上塗佈清漆組成物之後,藉由加熱而使有機媒體揮發,藉此能夠形成組成物層9。此時,藉由調整清漆組成物的塗佈量,能夠調整最終獲得之第1接著劑層(第1接著劑薄膜)的厚度。The composition layer 9 can be formed using a varnish composition (a varnish-like first adhesive composition), which is formed by adding the components (B) and (C), and other components added as needed in an organic medium. It is prepared by stirring, mixing, kneading, etc. to dissolve or disperse it. Specifically, for example, using an air knife coater, a roll coater, an applicator, a cut-out wheel coater, a die coater, or the like, on the support 11 (eg, a substrate subjected to mold release treatment) After the varnish composition is applied, the composition layer 9 can be formed by volatilizing the organic medium by heating. At this time, by adjusting the coating amount of the varnish composition, the thickness of the finally obtained first adhesive layer (first adhesive film) can be adjusted.

關於在清漆組成物的製備中使用之有機媒體,只要係具有能夠大致均勻地溶解或分散各成分之特性者,則並無特別限制。作為這樣的有機媒體,例如,可舉出甲苯、丙酮、甲基乙基酮、甲基異丁基酮、乙酸乙酯、乙酸丙酯、乙酸丁酯等。該等有機媒體能夠單獨使用或組合使用2種以上。製備清漆組成物時的攪拌混合或混練,例如能夠使用攪拌機、研磨機、3個輥、球磨機、珠磨機、均質分散器等來進行。The organic medium used for the preparation of the varnish composition is not particularly limited as long as it has the properties of being able to dissolve or disperse each component substantially uniformly. As such an organic medium, toluene, acetone, methyl ethyl ketone, methyl isobutyl ketone, ethyl acetate, propyl acetate, butyl acetate, etc. are mentioned, for example. These organic media can be used individually or in combination of 2 or more types. Stirring mixing or kneading at the time of preparing the varnish composition can be performed using, for example, a stirrer, a mill, three rolls, a ball mill, a bead mill, a homodispersor, or the like.

關於支撐體11,只要係具有能夠承受使有機媒體揮發時的加熱條件之耐熱性者,則並無特別限制。支撐體11可以為塑膠薄膜,亦可以為金屬箔。作為支撐體11,例如,可以使用將拉伸聚丙烯(OPP)、聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯、聚間苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚烯烴、聚乙酸酯、聚碳酸酯、聚苯硫醚、聚醯胺、聚醯亞胺、纖維素、乙烯-乙酸乙烯酯共聚物、聚氯乙烯、聚偏二氯乙烯、合成橡膠系、液晶聚合物等作為構成材料之基材(例如,薄膜)等。The support 11 is not particularly limited as long as it has heat resistance capable of withstanding the heating conditions at the time of volatilizing the organic medium. The support body 11 can be a plastic film or a metal foil. As the support 11 , for example, oriented polypropylene (OPP), polyethylene terephthalate (PET), polyethylene naphthalate, polyethylene isophthalate, polyethylene terephthalate, and polyethylene terephthalate can be used. Butylene Diformate, Polyolefin, Polyacetate, Polycarbonate, Polyphenylene Sulfide, Polyamide, Polyimide, Cellulose, Ethylene Vinyl Acetate Copolymer, Polyvinyl Chloride, Polyvinylidene Vinyl chloride, synthetic rubber, liquid crystal polymer, etc. are used as the base material (for example, film) of the constituent material, etc.

使有機媒體從塗佈於基材上之清漆組成物中揮發時的加熱條件能夠依據所使用之有機媒體等而適當地設定。加熱條件例如可以為40~120℃且0.1~10分鐘。The heating conditions at the time of volatilizing the organic medium from the varnish composition applied on the substrate can be appropriately set according to the organic medium to be used and the like. The heating conditions may be, for example, 40 to 120° C. for 0.1 to 10 minutes.

作為貼合積層薄膜12與基體6之方法,例如,可舉出熱壓、輥層壓、真空層壓等方法。關於層壓,例如能夠在0~80℃的溫度條件下進行。As a method of bonding the laminated film 12 and the base body 6, methods, such as hot pressing, roll lamination, and vacuum lamination, are mentioned, for example. The lamination can be performed, for example, under a temperature condition of 0 to 80°C.

在轉印步驟中,可以藉由將清漆組成物直接塗佈於基體6而形成組成物層9,但是藉由如上述方法般使用積層薄膜12而容易獲得支撐體11、組成物層9及導電粒子4形成為一體之粒子轉印層13,趨於能夠簡單地實施後述之光照射步驟。In the transfer step, the composition layer 9 can be formed by directly applying the varnish composition to the base 6, but the support 11, the composition layer 9 and the conductive layer 9 can be easily obtained by using the laminated film 12 as described above. The particle transfer layer 13 in which the particles 4 are formed as a single body tends to be able to easily perform the light irradiation step described later.

(光照射步驟) 在光照射步驟中,藉由對組成物層9(粒子轉印層13)照射光(活性光線)而使組成物層9中的(B)成分固化,形成第1接著劑層1(參閱圖10)。 (light irradiation step) In the light irradiation step, component (B) in the composition layer 9 is cured by irradiating the composition layer 9 (particle transfer layer 13 ) with light (active ray) to form the first adhesive layer 1 (see FIG. 10).

關於光的照射,可以使用包括150~750nm的範圍內的波長之照射光(例如,紫外光)。關於光的照射,例如,能夠使用低壓水銀燈、中壓水銀燈、高壓水銀燈、超高壓水銀燈、疝氣燈、金屬鹵化物燈、LED光源等來進行。所照射之光的累計光量能夠適當地設定,但是例如可以為500~3000mJ/cm 2Regarding the irradiation of light, irradiation light (eg, ultraviolet light) having a wavelength in the range of 150 to 750 nm can be used. The irradiation of light can be performed using, for example, a low pressure mercury lamp, a medium pressure mercury lamp, a high pressure mercury lamp, an extra high pressure mercury lamp, a xenon lamp, a metal halide lamp, an LED light source, or the like. The accumulated light amount of the irradiated light can be appropriately set, but may be, for example, 500 to 3000 mJ/cm 2 .

如圖10(a)的箭頭所示,在圖10(a)中,從與支撐體11相反的一側(組成物層9中的被轉印導電粒子4之側)照射了光,但是在支撐體11透射光之情形下,可以從支撐體11側照射光。又,在圖10(a)中,使基體6與粒子轉印層13分離之後照射了光,但是亦可以在基體6分離之前照射光。此時,可以在剝離支撐體11之後照射光。As indicated by the arrows in FIG. 10( a ), in FIG. 10( a ), light is irradiated from the side opposite to the support 11 (the side of the conductive particles 4 to be transferred in the composition layer 9 ), but the When the support body 11 transmits light, the light may be irradiated from the support body 11 side. In addition, in FIG. 10( a ), light is irradiated after the substrate 6 is separated from the particle transfer layer 13 , but light may be irradiated before the substrate 6 is separated. At this time, light may be irradiated after peeling off the support body 11 .

(積層步驟) 在積層步驟中,在第1接著劑層1的與支撐體11相反的一側(組成物層9中的被轉印導電粒子4之側)的面上設置第2接著劑層2。藉此,可獲得圖1中所示之電路連接用接著劑薄膜10A。 (layering step) In the lamination step, the second adhesive layer 2 is provided on the surface of the first adhesive layer 1 opposite to the support 11 (the side of the composition layer 9 on which the conductive particles 4 are to be transferred). Thereby, the adhesive film 10A for circuit connection shown in FIG. 1 can be obtained.

第2接著劑層2使用藉由將第2熱固化性成分(上述(C)成分)以及依需要添加之其他成分在有機媒體中進行攪拌混合、混練等而使其溶解或分散來製備之清漆組成物(清漆狀的第2接著劑組成物)來代替清漆狀的第1接著劑組成物,除此以外,能夠以與將組成物層9設置於基體6上之方法相同的方式,設置於第1接著劑層1上。亦即,可以藉由將在支撐體上形成第2接著劑層2而獲得之積層薄膜與第1接著劑層1貼合而在第1接著劑層1上設置第2接著劑層2,亦可以藉由將清漆狀的第2接著劑組成物直接塗佈於第1接著劑層1而在第1接著劑層1上設置第2接著劑層2。The second adhesive layer 2 uses a varnish prepared by dissolving or dispersing the second thermosetting component (the above-mentioned (C) component) and other components added as necessary in an organic medium by stirring, mixing, kneading, etc. The composition (varnish-like second adhesive composition) can be provided on the substrate 6 in the same manner as the method for providing the composition layer 9 on the substrate 6, except that the varnish-like first adhesive composition is replaced. on the first adhesive layer 1 . That is, it is possible to provide the second adhesive layer 2 on the first adhesive layer 1 by laminating the laminated film obtained by forming the second adhesive layer 2 on the support with the first adhesive layer 1, and also The second adhesive layer 2 can be provided on the first adhesive layer 1 by directly applying the varnish-like second adhesive composition to the first adhesive layer 1 .

在積層步驟中,藉由如上述方法般在與支撐體11相反的一側的面上設置第2接著劑層2,能夠期待提高電路連接用接著劑薄膜對電路構件的貼合性及抑制連接時的剝離。在積層步驟中,可以在剝離支撐體11之後在設置有該支撐體11之側的面上設置第2接著劑層2。此時,積層步驟可以在光照射步驟之前進行,亦可以在轉印步驟之前進行。In the lamination step, by providing the second adhesive layer 2 on the surface opposite to the support 11 as described above, it is expected to improve the adhesion of the adhesive film for circuit connection to the circuit member and suppress the connection peeling. In the lamination step, the second adhesive layer 2 may be provided on the surface on the side where the support 11 is provided after peeling off the support 11 . In this case, the lamination step may be performed before the light irradiation step, or may be performed before the transfer step.

以上,例舉電路連接用接著劑薄膜10A之製造方法,對一實施形態的電路連接用接著劑薄膜之製造方法進行了說明,但是本發明並不限定於上述實施形態。As mentioned above, although the manufacturing method of the adhesive film 10A for circuit connections was exemplified, and the manufacturing method of the adhesive film for circuit connections of one Embodiment was demonstrated, this invention is not limited to the said embodiment.

例如,電路連接用接著劑薄膜之製造方法還可以包括在第1接著劑層的與第2接著劑層相反的一側的面上設置第3接著劑層之步驟(第2積層步驟)。在該方法中,可獲得還具備第3接著劑層之電路連接用接著劑薄膜(例如,圖4中所示之電路連接用接著劑薄膜10B)。For example, the manufacturing method of the adhesive film for circuit connection may further include the process of providing a 3rd adhesive layer on the surface of the opposite side to the 2nd adhesive layer of a 1st adhesive layer (2nd lamination|stacking process). In this method, the adhesive film for circuit connection (for example, the adhesive film 10B for circuit connection shown in FIG. 4) which further has a 3rd adhesive layer can be obtained.

在第2積層步驟中,設置含有第3熱固化性成分(上述(C)成分)、以及依需要添加之其他成分之組成物(第3接著劑組成物)來代替第2接著劑組成物,除此以外,能夠以與用以設置第2接著劑層之上述積層步驟(第1積層步驟)相同的方式,在第1接著劑層上設置第3接著劑層。第2積層步驟可以在第1積層步驟之前實施。In the second lamination step, a composition (third adhesive composition) containing the third thermosetting component (the above-mentioned (C) component) and other components added as necessary is provided instead of the second adhesive composition, Otherwise, the third adhesive layer can be provided on the first adhesive layer in the same manner as in the above-described lamination step (first lamination step) for providing the second adhesive layer. The second lamination step can be performed before the first lamination step.

<連接結構體及其製造方法> 以下,例舉作為電路連接材料使用上述電路連接用接著劑薄膜10A之態樣,對連接結構體(電路連接結構體)及其製造方法進行說明。 <Connected structure and its manufacturing method> Hereinafter, the connection structure (circuit connection structure) and its manufacturing method are demonstrated using the aspect which uses the said adhesive film 10A for circuit connections as a circuit connection material.

圖11係表示連接結構體的一實施形態之示意剖面圖。如圖11所示,連接結構體100具備:第1電路構件23,具有第1電路基板21及形成於第1電路基板21的主表面21a上之第1電極22;第2電路構件26,具有第2電路基板24及形成於第2電路基板24的主表面24a上之第2電極25;及連接部27,包含電路連接用接著劑薄膜10A的固化體,將第1電極22與第2電極25經由導電粒子4(或導電粒子4的熔融固化物)相互電連接並且將第1電路構件23與第2電路構件26接著。FIG. 11 is a schematic cross-sectional view showing an embodiment of the connection structure. As shown in FIG. 11 , the connection structure 100 includes a first circuit member 23 having a first circuit board 21 and a first electrode 22 formed on a main surface 21 a of the first circuit board 21 , and a second circuit member 26 having The second circuit board 24, the second electrode 25 formed on the main surface 24a of the second circuit board 24, and the connection portion 27, including the cured body of the adhesive film 10A for circuit connection, the first electrode 22 and the second electrode 25 are electrically connected to each other via the conductive particles 4 (or the molten solidified product of the conductive particles 4 ), and the first circuit member 23 and the second circuit member 26 are bonded together.

第1電路構件23及第2電路構件26可以相互相同,亦可以相互不同。第1電路構件23及第2電路構件26可以為形成有電路電極之玻璃基板或塑膠基板;印刷線路板;陶瓷配線板;可撓性配線板;驅動用IC等IC晶片等。第1電路基板21及第2電路基板24可以由半導體、玻璃、陶瓷等無機物、聚醯亞胺、聚碳酸酯等有機物、玻璃/環氧等複合物等形成。第1電路基板21可以為塑膠基板。第1電路構件23例如可以為形成有電路電極之塑膠基板(將聚醯亞胺、聚碳酸酯、聚對苯二甲酸乙二酯、環烯烴聚合物等有機物作為構成材料之塑膠基板),第2電路構件26例如可以為驅動用IC等IC晶片。形成有電極之塑膠基板可以為藉由在塑膠基板上例如以矩陣狀規則排列有機TFT等像素驅動電路或複數個有機EL元件R、G、B而形成顯示區域者。The first circuit member 23 and the second circuit member 26 may be the same or different from each other. The first circuit member 23 and the second circuit member 26 may be glass substrates or plastic substrates on which circuit electrodes are formed; printed wiring boards; ceramic wiring boards; flexible wiring boards; IC chips such as driving ICs. The first circuit board 21 and the second circuit board 24 may be formed of inorganic substances such as semiconductors, glass, and ceramics, organic substances such as polyimide and polycarbonate, and composites such as glass/epoxy. The first circuit substrate 21 may be a plastic substrate. The first circuit member 23 can be, for example, a plastic substrate on which circuit electrodes are formed (a plastic substrate using organic substances such as polyimide, polycarbonate, polyethylene terephthalate, and cycloolefin polymers as constituent materials), The circuit member 26 may be, for example, an IC chip such as a driver IC. The plastic substrate on which the electrodes are formed can be formed by regularly arranging pixel driving circuits such as organic TFTs or a plurality of organic EL elements R, G, and B on the plastic substrate to form a display area.

第1電極22及第2電極25可以為包含金、銀、錫、釕、銠、鈀、鋨、銥、鉑、銅、鋁、鉬、鈦等金屬、銦錫氧化物(ITO)、銦鋅氧化物(IZO)、銦鎵鋅氧化物(IGZO)等氧化物等之電極。第1電極22及第2電極25可以為積層該等金屬、氧化物等中的2種以上而成之電極。積層2種以上而成之電極可以為2層以上,亦可以為3層以上。第1電極22及第2電極25可以為電路電極,亦可以為凸塊電極。在圖11中,第1電極22為電路電極,第2電極25為凸塊電極。The first electrode 22 and the second electrode 25 may be made of metals including gold, silver, tin, ruthenium, rhodium, palladium, osmium, iridium, platinum, copper, aluminum, molybdenum, titanium, etc., indium tin oxide (ITO), indium zinc Electrodes of oxides such as oxide (IZO), indium gallium zinc oxide (IGZO), etc. The first electrode 22 and the second electrode 25 may be electrodes formed by laminating two or more of these metals, oxides, and the like. The electrode formed by laminating two or more types may be two or more layers or three or more layers. The first electrodes 22 and the second electrodes 25 may be circuit electrodes or bump electrodes. In FIG. 11 , the first electrodes 22 are circuit electrodes, and the second electrodes 25 are bump electrodes.

連接部27例如具有:第1區域28,位於第1電路構件23與第2電路構件26相互對置之方向(以下為“對置方向”)上的第1電路構件23側,且包含上述第1接著劑層中的除了導電粒子4以外的(B)成分的固化物及(C)成分等的固化物;第2區域29,位於對置方向上的第2電路構件26側,且包含上述第2接著劑層中的(C)成分等的固化物;及導電粒子4(或導電粒子4的熔融固化物),至少介於第1電極22及第2電極25之間而將第1電極22及第2電極25相互電連接。連接部27不必在第1區域28與第2區域29之間具有2個明確的區域,可以混合源自第1接著劑層之固化物和源自第2接著劑層之固化物而形成1個區域。The connection portion 27 has, for example, a first region 28 located on the side of the first circuit member 23 in a direction in which the first circuit member 23 and the second circuit member 26 face each other (hereinafter referred to as "opposing direction"), and includes the above-mentioned first circuit member 23 . 1. The cured product of the component (B) and the cured product of the component (C) other than the conductive particles 4 in the adhesive layer; the second region 29 is located on the side of the second circuit member 26 in the opposing direction, and includes the above-mentioned The cured product of the component (C) and the like in the second adhesive layer; and the conductive particles 4 (or the molten solidified product of the conductive particles 4 ) are interposed at least between the first electrode 22 and the second electrode 25 to connect the first electrode 22 and the second electrode 25 are electrically connected to each other. The connecting portion 27 does not have to have two distinct regions between the first region 28 and the second region 29, and one can be formed by mixing the cured product derived from the first adhesive layer and the cured product derived from the second adhesive layer. area.

作為連接結構體,例如,可舉出將規則地配置有有機EL元件之塑膠基板與作為影像顯示用驅動器之驅動電路元件連接而成之柔性有機電致發光彩色顯示器(有機EL顯示器)、將規則地配置有有機EL元件之塑膠基板與觸控板等位置輸入元件連接而成之觸控面板等。連接結構體能夠應用於智慧手機、平板電腦、電視機、交通工具的導航系統、可穿戴式終端等各種監視器;家具;家電;日用品等。Examples of the connecting structure include a flexible organic electroluminescence color display (organic EL display) in which a plastic substrate on which organic EL elements are regularly arranged and a drive circuit element serving as a driver for image display are connected, and a regular A touch panel or the like is formed by connecting a plastic substrate with organic EL elements and a position input element such as a touch panel. The connection structure can be applied to various monitors such as smartphones, tablet computers, televisions, navigation systems of vehicles, wearable terminals, etc.; furniture; home appliances; daily necessities, etc.

圖12係表示連接結構體100之製造方法的一實施形態之示意剖面圖。圖12(a)及圖12(b)係表示各步驟之示意剖面圖。如圖12所示,連接結構體100之製造方法包括如下步驟:在第1電路構件23的設置有第1電極22之面與第2電路構件26的設置有第2電極25之面之間配置上述電路連接用接著劑薄膜10A;及將包含第1電路構件23、電路連接用接著劑薄膜10A及第2電路構件26之積層體在該積層體的厚度方向上按壓之狀態下進行加熱,藉此將第1電極22與第2電極25經由導電粒子4(或者導電粒子4的熔融固化物)相互電連接並且將第1電路構件23與第2電路構件26接著。FIG. 12 is a schematic cross-sectional view showing an embodiment of a method of manufacturing the connection structure 100 . 12(a) and 12(b) are schematic cross-sectional views showing each step. As shown in FIG. 12 , the method of manufacturing the connection structure 100 includes the steps of arranging between the surface of the first circuit member 23 on which the first electrodes 22 are provided and the surface of the second circuit member 26 on which the second electrodes 25 are provided. The above-mentioned adhesive film 10A for circuit connection; and the laminate including the first circuit member 23, the adhesive film 10A for circuit connection, and the second circuit member 26 are heated in a state of being pressed in the thickness direction of the laminate. This electrically connects the first electrode 22 and the second electrode 25 to each other via the conductive particles 4 (or a molten solidified product of the conductive particles 4 ), and connects the first circuit member 23 and the second circuit member 26 to each other.

具體而言,首先,準備具備第1電路基板21及形成於第1電路基板21的主表面21a上之第1電極22之第1電路構件23和具備第2電路基板24及形成於第2電路基板24的主表面24a上之第2電極25之第2電路構件26。Specifically, first, the first circuit member 23 including the first circuit board 21 and the first electrodes 22 formed on the main surface 21a of the first circuit board 21, and the second circuit board 24 and the first circuit member 22 formed on the second circuit board 21 are prepared. The second circuit member 26 of the second electrode 25 on the main surface 24 a of the substrate 24 .

接著,以第1電極22及第2電極25相互對置之方式配置第1電路構件23及第2電路構件26,在第1電路構件23與第2電路構件26之間配置電路連接用接著劑薄膜10A。例如,如圖12(a)所示,使第1接著劑層1側與第1電路基板21的主表面21a對置而將電路連接用接著劑薄膜10A層壓於第1電路構件23上。接著,以第1電路基板21上的第1電極22與第2電路基板24上的第2電極25相互對置之方式,在層壓有電路連接用接著劑薄膜10A之第1電路構件23上配置第2電路構件26。Next, the first circuit member 23 and the second circuit member 26 are arranged so that the first electrode 22 and the second electrode 25 are opposed to each other, and an adhesive for circuit connection is arranged between the first circuit member 23 and the second circuit member 26 Film 10A. For example, as shown in FIG. 12( a ), the adhesive film 10A for circuit connection is laminated on the first circuit member 23 with the first adhesive layer 1 side facing the main surface 21 a of the first circuit board 21 . Next, on the first circuit member 23 on which the adhesive film 10A for circuit connection is laminated so that the first electrode 22 on the first circuit board 21 and the second electrode 25 on the second circuit board 24 face each other The second circuit member 26 is arranged.

並且,如圖12(b)所示,藉由將依次積層第1電路構件23、電路連接用接著劑薄膜10A及第2電路構件26而成之積層體在該積層體的厚度方向上按壓之狀態下進行加熱,將第1電路構件23與第2電路構件26相互熱壓接。此時,如圖12(b)中的箭頭所示,第1接著劑層1及第2接著劑層2中所包含之可流動之未固化的熱固化性成分流動以填埋相互相鄰之電極的空隙(第1電極22彼此之間的空隙及第2電極25彼此之間的空隙),並且藉由上述加熱進行固化。藉此,第1電極22及第2電極25經由導電粒子4相互電連接,且第1電路構件23及第2電路構件26相互接著,從而可獲得圖11中所示之連接結構體100。Then, as shown in FIG. 12( b ), a laminate in which the first circuit member 23 , the adhesive film 10A for circuit connection, and the second circuit member 26 are laminated in this order is pressed in the thickness direction of the laminate. Heating is performed in the state, and the first circuit member 23 and the second circuit member 26 are thermocompression-bonded to each other. At this time, as indicated by the arrows in FIG. 12( b ), the flowable uncured thermosetting components contained in the first adhesive layer 1 and the second adhesive layer 2 flow so as to fill the adjacent areas. The gaps between the electrodes (the gap between the first electrodes 22 and the gap between the second electrodes 25 ) are cured by the above heating. Thereby, the first electrode 22 and the second electrode 25 are electrically connected to each other via the conductive particles 4, and the first circuit member 23 and the second circuit member 26 are bonded to each other, so that the connection structure 100 shown in FIG. 11 can be obtained.

在上述連接結構體100之製造方法中,藉由光照射而第1接著劑層1的一部分固化,因此第1接著劑層1中的導電粒子的流動受到抑制,因此可在對置之電極之間有效率且高效率地捕獲導電粒子。又,第1接著劑層1及第2接著劑層2中所包含之熱固化性成分在熱壓接時流動,因此連接後樹脂不易介於導電粒子4與電極(第1電極及第2電極)之間,可減少對置之第1電極22及第2電極25之間的連接電阻。In the above-described method of manufacturing the bonded structure 100, since a part of the first adhesive layer 1 is cured by light irradiation, the flow of the conductive particles in the first adhesive layer 1 is suppressed, and therefore, the conductive particles can be placed between the opposing electrodes. The conductive particles are efficiently and efficiently trapped. In addition, since the thermosetting components contained in the first adhesive layer 1 and the second adhesive layer 2 flow during thermocompression bonding, it is difficult for the resin to intervene between the conductive particles 4 and the electrodes (the first electrode and the second electrode) after the connection. ), the connection resistance between the opposing first electrodes 22 and the second electrodes 25 can be reduced.

在作為導電粒子使用焊料粒子之情形下,焊料粒子熔融,聚集在第1電極22與第2電極25之間,形成焊料層,然後,進行冷却,藉此焊料層被固著於第1電極22與第2電極25之間,將第1電極22與第2電極25相互電連接。When solder particles are used as conductive particles, the solder particles are melted and aggregated between the first electrode 22 and the second electrode 25 to form a solder layer, and then the solder layer is fixed to the first electrode 22 by cooling. Between the second electrode 25 , the first electrode 22 and the second electrode 25 are electrically connected to each other.

連接時的加熱溫度能夠適當地設定,但是例如可以為50~190℃。在作為導電粒子使用焊料粒子之情形下,只要係焊料粒子能夠熔融之溫度(例如,比焊料粒子的熔點高的溫度)即可,例如,可以為130~260℃。關於加壓,只要在不損壞被黏體之範圍內,則並無特別限制,但是在COP安裝之情形下,例如凸塊電極上的面積換算壓力可以為0.1~50MPa,亦可以為40MPa以下,還可以為0.1~40MPa。又,在COG安裝之情形下,例如,凸塊電極上的面積換算壓力可以為10~100MPa。該等加熱及加壓時間可以在0.5~120秒鐘的範圍內。 [實施例] The heating temperature at the time of connection can be appropriately set, but may be, for example, 50 to 190°C. When solder particles are used as conductive particles, the temperature may be at which the solder particles can be melted (for example, a temperature higher than the melting point of the solder particles), for example, 130 to 260°C. The pressure is not particularly limited as long as it does not damage the adherend, but in the case of COP mounting, for example, the area-converted pressure on the bump electrode can be 0.1 to 50 MPa, or 40 MPa or less. It may also be 0.1 to 40 MPa. In addition, in the case of COG mounting, for example, the area conversion pressure on the bump electrode may be 10 to 100 MPa. These heating and pressing times may be in the range of 0.5 to 120 seconds. [Example]

以下,使用實施例及比較例對本發明的內容更詳細地進行說明,但是本發明並不限定於以下實施例。Hereinafter, the content of the present invention will be described in more detail using Examples and Comparative Examples, but the present invention is not limited to the following Examples.

在實施例及比較例中,將以下所示之材料用作(B1)成分、(B2)成分、(C1)成分、(C2)成分、(C3)成分、(C4)成分、(D)成分、(E)成分及(F)成分。 (B1)成分:自由基聚合性化合物 •NK Ester A-BPEF(9,9-雙[4-(2-丙烯醯氧基乙氧基)苯基]茀,SHIN-NAKAMURA CHEMICAL CO, LTD.製造) •RIPOXY VR-90(雙酚A型環氧甲基丙烯酸酯,SHOWA DENKO K.K.製造) •CYCLOMER M100(3,4-環氧環己基甲基丙烯酸甲酯,Daicel Corporation製造) •A-1000(聚乙二醇二丙烯酸酯,SHIN-NAKAMURA CHEMICAL CO, LTD.製造) •A9300-1CL(己內酯改質三聚異氰酸三-(2-丙烯醯氧基乙酯),SHIN-NAKAMURA CHEMICAL CO, LTD.製造) (B2)成分:光自由基聚合起始劑 •Irgacure OXE-02(1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]-乙酮 1-(鄰乙醯肟),BASF Japan Ltd.製造) •Omnirad907(2-甲基-1-[4-(甲硫基)苯基]-2-口末啉代丙烷-1-酮,IGM RESINS B.V.公司製造) (C1)成分:陽離子聚合性化合物 •ETERNACOLL OXBP(4,4’-雙[(3-乙基-3-氧雜環丁烷基)甲氧基甲基]聯苯,UBE INDUSTRIES,LTD.製造) •CELLOXIDE8010(雙-7-氧雜雙環[4.1.0]庚烷,Daicel Corporation製造) •jER1010(雙酚A型環氧樹脂,Mitsubishi Chemical Corporation製造) •YL983U(雙酚F型環氧樹脂,Mitsubishi Chemical Corporation製造) (C2)成分:熱陽離子聚合起始劑(熱潛伏性陽離子產生劑) •CXC-1821(四級銨鹽型熱酸產生劑,King Industries公司製造)、 •SI-60L(芳香族锍鹽型熱酸產生劑,SANSHIN CHEMICAL INDUSTRY CO.,LTD.製造) (C3)成分:陰離子聚合性化合物 •HP-4032D(1,6-雙(環氧乙烷基甲氧基)萘,DIC CORPORATION製造) (C4)成分:熱陰離子聚合起始劑(熱潛伏性陰離子產生劑) •HX-3941HP(微膠囊型咪唑系固化促進劑,Asahi Kasei Corporation製造) (D)成分:熱塑性樹脂 •P-1:藉由後述方法合成之茀型苯氧基樹脂 •YP-70(雙酚A/雙酚F共聚型苯氧基樹脂,NIPPON STEEL Chemical & Material Co., Ltd.製造) (E)成分:偶合劑 •KBM-403(γ-環氧丙氧基丙基三甲氧基矽烷,Shin-Etsu Chemical Co., Ltd.製造) (F)成分:填充劑 •AEROSIL R805(三甲氧基辛基矽烷和二氧化矽的水解產物(二氧化矽微粒),Evonik Industries AG製造,使用由有機溶劑稀釋成不揮發成分為10質量%者) In Examples and Comparative Examples, the following materials were used as (B1) component, (B2) component, (C1) component, (C2) component, (C3) component, (C4) component, and (D) component , (E) components and (F) components. (B1) component: radically polymerizable compound • NK Ester A-BPEF (9,9-bis[4-(2-propenyloxyethoxy)phenyl]pyridine, manufactured by SHIN-NAKAMURA CHEMICAL CO, LTD.) • RIPOXY VR-90 (Bisphenol A type epoxy methacrylate, manufactured by SHOWA DENKO K.K.) •CYCLOMER M100 (3,4-epoxycyclohexyl methyl methacrylate, manufactured by Daicel Corporation) •A-1000 (Polyethylene glycol diacrylate, manufactured by SHIN-NAKAMURA CHEMICAL CO, LTD.) •A9300-1CL (caprolactone-modified tris-(2-propenyloxyethyl) isocyanate, manufactured by SHIN-NAKAMURA CHEMICAL CO, LTD.) (B2) Component: photo-radical polymerization initiator • Irgacure OXE-02 (1-[9-ethyl-6-(2-methylbenzyl)-9H-carbazol-3-yl]-ethanone 1-(o-acetoxime), BASF Japan Ltd. manufactures) • Omnirad907 (2-methyl-1-[4-(methylthio)phenyl]-2-merolinopropan-1-one, manufactured by IGM RESINS B.V.) (C1) component: cationic polymerizable compound •ETERNACOLL OXBP (4,4'-bis[(3-ethyl-3-oxetanyl)methoxymethyl]biphenyl, manufactured by UBE INDUSTRIES, LTD.) • CELLOXIDE8010 (bis-7-oxabicyclo[4.1.0]heptane, manufactured by Daicel Corporation) • jER1010 (bisphenol A type epoxy resin, manufactured by Mitsubishi Chemical Corporation) • YL983U (bisphenol F type epoxy resin, manufactured by Mitsubishi Chemical Corporation) (C2) Component: thermal cationic polymerization initiator (thermal latent cation generator) • CXC-1821 (quaternary ammonium salt type thermal acid generator, manufactured by King Industries), •SI-60L (aromatic sulfonium salt type thermal acid generator, manufactured by SANSHIN CHEMICAL INDUSTRY CO.,LTD.) (C3) component: anionic polymerizable compound • HP-4032D (1,6-bis(oxiranylmethoxy)naphthalene, manufactured by DIC CORPORATION) (C4) Component: thermal anionic polymerization initiator (thermal latent anion generator) •HX-3941HP (Microcapsule-type imidazole-based curing accelerator, manufactured by Asahi Kasei Corporation) (D) Component: Thermoplastic resin •P-1: Phenoxy phenoxy resin synthesized by the method described later •YP-70 (Bisphenol A/Bisphenol F copolymerized phenoxy resin, manufactured by NIPPON STEEL Chemical & Material Co., Ltd.) (E) Component: Coupling agent •KBM-403 (γ-glycidoxypropyltrimethoxysilane, manufactured by Shin-Etsu Chemical Co., Ltd.) (F) Ingredient: Filler •AEROSIL R805 (hydrolyzate of trimethoxyoctylsilane and silica (fine silica), manufactured by Evonik Industries AG, diluted with an organic solvent to a non-volatile content of 10% by mass)

(P-1的合成) 將4,4’-(9-亞茀基)-二酚45g(Sigma-Aldrich Japan K.K.製造)及3,3’,5,5’-四甲基雙酚二環氧丙醚50g(YX-4000H,Mitsubishi Chemical Corporation製造)在安裝有戴氏冷却管、氯化鈣管及與攪拌馬達連接之Teflon攪拌棒(“Teflon”為註冊商標)之3000mL的三口燒瓶中溶解於N-甲基吡咯啶酮1000mL中而作為反應液。在其中加入碳酸鉀21g,一邊使用加熱包加熱至110℃一邊進行了攪拌。攪拌3小時之後,將反應液滴加到裝有1000mL的甲醇之燒杯中,藉由對所生成之沉澱物進行抽吸過濾來進行了濾取。進而使用300mL的甲醇將濾取之沉澱物清洗3次,獲得了75g苯氧基樹脂P-1。 (Synthesis of P-1) 45 g of 4,4'-(9-perylene)-diphenol (manufactured by Sigma-Aldrich Japan K.K.) and 50 g of 3,3',5,5'-tetramethylbisphenol diglycidyl ether (YX- 4000H, manufactured by Mitsubishi Chemical Corporation) was dissolved in N-methylpyrrolidine in a 3000 mL three-necked flask equipped with a Days cooling tube, a calcium chloride tube, and a Teflon stirring bar ("Teflon" is a registered trademark) connected to a stirring motor. 1000 mL of ketone was used as a reaction solution. 21 g of potassium carbonate was added to this, and it stirred, heating to 110 degreeC using a heating mantle. After stirring for 3 hours, the reaction was added dropwise to a beaker containing 1000 mL of methanol, and the resultant precipitate was subjected to suction filtration to collect by filtration. Furthermore, the precipitate collected by filtration was washed three times with 300 mL of methanol, and 75 g of phenoxy resin P-1 was obtained.

其後,使用TOSOH CORPORATION製造的高效液相層析儀GP8020來測量了苯氧基樹脂P-1的分子量(管柱:Hitachi Chemical Company, Ltd.製造的GelpakGL-A150S及GLA160S,溶析液:四氫呋喃,流速:1.0ml/分鐘)。其結果,以聚苯乙烯換算計Mn=15769、Mw=38045、Mw/Mn=2.413。Then, the molecular weight of the phenoxy resin P-1 was measured using a high performance liquid chromatograph GP8020 manufactured by TOSOH CORPORATION (column: Gelpak GL-A150S and GLA160S manufactured by Hitachi Chemical Company, Ltd., eluent: tetrahydrofuran , flow rate: 1.0ml/min). As a result, Mn=15769, Mw=38045, and Mw/Mn=2.413 in terms of polystyrene.

<實施例1> (步驟(a):準備步驟) [步驟(a1):基體的準備] 準備了在表面具有複數個凹部之基體(PET薄膜,厚度:55μm)。凹部設為開口面積朝向基體的表面側擴大之圓錐梯形(若從開口部上面觀察,則底部的中心與開口部的中心相同),開口直徑設為4.3μmφ,底部直徑設為4.0μmφ,深度設為4.0μm。又,複數個凹部以6.2μm的間隔(各底部的中心間距離)以三向排列規則地形成為每1mm見方中有29,000個。 <Example 1> (step (a): preparation step) [Step (a1): Preparation of substrate] A base (PET film, thickness: 55 μm) having a plurality of recesses on the surface was prepared. The concave portion is a conical trapezoid whose opening area expands toward the surface side of the base (the center of the bottom is the same as the center of the opening when viewed from the top of the opening), the diameter of the opening is 4.3 μmφ, the diameter of the bottom is 4.0 μmφ, and the depth is set to 4.3 μmφ. is 4.0 μm. In addition, a plurality of recesses were regularly formed in a three-way array at intervals of 6.2 μm (distance between the centers of the bottoms) so that there were 29,000 recesses per 1 mm square.

[步驟(a2):導電粒子的配置] 作為(A)成分,準備在由塑膠(交聯聚苯乙烯)組成的核(粒子)的表面形成厚度為0.15μm的鎳層而成之導電粒子(平均粒徑:3.3μm,粒徑的C.V.值:2.8%,比重:2.9),將其配置於基體的形成有凹部之面上。接著,藉由使用微黏結輥刮擦基體的形成有凹部之面來去除多餘的導電粒子,僅在凹部內配置了導電粒子。另外,導電粒子的平均粒徑及粒徑的C.V.值為如下值,亦即,將經由後述之步驟(b)及(c)製作之第1接著劑層切成10cm×10cm,對配置有導電粒子之面實施Pt濺射之後,對300個導電粒子進行SEM觀察而測量出之值。 [Step (a2): Configuration of Conductive Particles] As component (A), conductive particles (average particle size: 3.3 μm, C.V. particle size of C.V. value: 2.8%, specific gravity: 2.9), which was arranged on the surface of the base body on which the concave portion was formed. Next, excess conductive particles were removed by scraping the surface of the substrate in which the recesses were formed with a micro-bonding roller, and the conductive particles were arranged only in the recesses. In addition, the average particle diameter of the conductive particles and the C.V. value of the particle diameter are the following values. That is, the first adhesive layer produced through the steps (b) and (c) described later is cut into 10 cm×10 cm, and the conductive particles are arranged After the surface of the particles was subjected to Pt sputtering, 300 conductive particles were observed and measured by SEM.

(步驟(b):轉印步驟) [步驟(b1):組成物層的製作] 將表1中所示之(B1)成分、(B2)成分、(C1)成分、(C2)成分、(D)成分、(E)成分及(F)成分以表1中所示之摻合量(單位:質量份,固體成分量)與有機溶劑(2-丁酮)一起進行混合,獲得了樹脂溶液。接著,將該樹脂溶液塗佈於經矽酮脫模處理之厚度為38μm的PET薄膜上,在60℃下進行3分鐘熱風乾燥,藉此在PET薄膜上製作了厚度為1.5μm的組成物層。 (Step (b): Transfer Step) [Step (b1): Preparation of Composition Layer] (B1) component, (B2) component, (C1) component, (C2) component, (D) component, (E) component and (F) component shown in Table 1 were blended as shown in Table 1 The amount (unit: part by mass, solid content) was mixed with an organic solvent (2-butanone) to obtain a resin solution. Next, the resin solution was coated on a PET film with a thickness of 38 μm that had undergone a silicone release treatment, and was dried with hot air at 60° C. for 3 minutes, thereby forming a composition layer with a thickness of 1.5 μm on the PET film. .

【表1】 種類 摻合量 (質量份) (B1)成分 A-BPEF 10 VR-90 10 (B2)成分 OXE-02 0.5 (C1)成分 OXBP 20 CEL8010 20 (C2)成分 CXC-1821 7 (D)成分 P-1 20 YP-70 20 (E)成分 KBM-403 5 (F)成分 R805 10 【Table 1】 type Blending amount (parts by mass) (B1) Ingredients A-BPEF 10 VR-90 10 (B2) Ingredients OXE-02 0.5 (C1) Ingredients OXBP 20 CEL8010 20 (C2) Ingredients CXC-1821 7 (D) Ingredients P-1 20 YP-70 20 (E) Ingredients KBM-403 5 (F) Ingredients R805 10

[步驟(b2):導電粒子的轉印] 將在步驟(b1)中製作之形成於PET薄膜上之上述組成物層與在步驟(a)中製作之在凹部配置有導電粒子之基體相對配置,將導電粒子轉印到組成物層。 [Step (b2): Transfer of Conductive Particles] The above-mentioned composition layer formed on the PET film produced in step (b1) and the substrate formed in step (a) with the conductive particles arranged in the concave portions are disposed opposite to each other, and the conductive particles are transferred to the composition layer.

(步驟(c):光照射步驟) 對於被轉印導電粒子之組成物層,使用金屬鹵化物燈從被轉印導電粒子之側使用UV固化爐(Ushio Inc.製造,UVC-2534/1MNLC3-XJ01)照射累計光量為1700mJ/cm 2(波長:365nm)的紫外線,使(B2)成分活化,使(B1)成分進行了聚合。藉此,使組成物層中的光固化性成分((B1)成分及(B2)成分)固化,形成了第1接著劑層。 (Step (c): Light Irradiation Step) For the composition layer of the conductive particles to be transferred, a UV curing oven (manufactured by Ushio Inc., UVC-2534/1MNLC3- XJ01) Irradiated ultraviolet rays with a cumulative light intensity of 1700 mJ/cm 2 (wavelength: 365 nm) to activate the component (B2) and polymerize the component (B1). Thereby, the photocurable components (component (B1) and component (B2)) in the composition layer are cured, and the first adhesive layer is formed.

(步驟(d):積層步驟) [步驟(d1):第2接著劑層的製作] 將表2中所示之(C1)成分、(C2)成分、(D)成分、(E)成分及(F)成分以表2中所示之摻合量(單位:質量份,固體成分量)與有機溶劑(2-丁酮)一起進行混合,獲得了樹脂溶液。接著,將該樹脂溶液塗佈於經矽酮脫模處理之厚度為50μm的PET薄膜上,在60℃下進行3分鐘熱風乾燥,藉此在PET薄膜上製作了厚度為12.5μm的第2接著劑層。 (Step (d): Layering step) [Step (d1): Preparation of Second Adhesive Layer] (C1) Component, (C2) Component, (D) Component, (E) Component and (F) Component shown in Table 2 are blended in the amounts shown in Table 2 (unit: mass part, solid content amount ) was mixed with an organic solvent (2-butanone) to obtain a resin solution. Next, the resin solution was coated on a PET film with a thickness of 50 μm that had undergone a silicone release treatment, and was dried with hot air at 60° C. for 3 minutes, thereby producing a second adhesive film with a thickness of 12.5 μm on the PET film. agent layer.

【表2】 種類 摻合量 (質量份) (C1)成分 OXBP 25 CEL8010 25 jER1010 40 (C2)成分 CXC-1821 7 (D)成分 P-1 10 (E)成分 KBM-403 5 (F)成分 R805 10 【Table 2】 type Blending amount (parts by mass) (C1) Ingredients OXBP 25 CEL8010 25 jER1010 40 (C2) Ingredients CXC-1821 7 (D) Ingredients P-1 10 (E) Ingredients KBM-403 5 (F) Ingredients R805 10

[步驟(d2):第2接著劑層的積層] 一邊施加50℃的溫度一邊將在步驟(c)中製作之第1接著劑層與在步驟(d1)中製作之第2接著劑層進行了貼合。藉此,獲得了雙層結構的各向異性導電性接著劑薄膜(厚度:14μm)。 [Step (d2): Lamination of the second adhesive layer] The first adhesive layer produced in the step (c) and the second adhesive layer produced in the step (d1) were bonded together while applying a temperature of 50°C. Thereby, an anisotropic conductive adhesive film (thickness: 14 μm) having a double-layer structure was obtained.

<實施例2> 除了步驟(a)~步驟(d)以外,還進行了以下步驟(e),除此以外,以與實施例1相同的方式,製作了各向異性導電性接著劑薄膜。 <Example 2> In addition to the steps (a) to (d), the following step (e) was performed, and an anisotropic conductive adhesive film was produced in the same manner as in Example 1.

(步驟(e):第2積層步驟) [步驟(e1):第3接著劑層的製作] 將表3中所示之(C1)成分、(C2)成分、(D)成分、(E)成分及(F)成分以表3中所示之摻合量(單位:質量份,固體成分量)與有機溶劑(2-丁酮)一起進行混合,獲得了樹脂溶液。接著,將該樹脂溶液塗佈於經矽酮脫模處理之厚度為50μm的PET薄膜上,在60℃下進行3分鐘熱風乾燥,藉此在PET薄膜上製作了厚度為2.0μm的第3接著劑層。 (Step (e): 2nd layer-up step) [Step (e1): Preparation of the third adhesive layer] The (C1) component, (C2) component, (D) component, (E) component and (F) component shown in Table 3 were blended in the amount shown in Table 3 (unit: mass part, solid content amount ) was mixed with an organic solvent (2-butanone) to obtain a resin solution. Next, the resin solution was coated on a PET film with a thickness of 50 μm that had undergone a silicone mold release treatment, and was dried with hot air at 60° C. for 3 minutes, thereby producing a third adhesive film with a thickness of 2.0 μm on the PET film. agent layer.

【表3】    種類 摻合量 (質量份) (C1)成分 OXBP 25 CEL8010 25 (C2)成分 CXC-1821 7 (D)成分 P-1 20 (E)成分 KBM-403 5 (F)成分 R805 10 【table 3】 type Blending amount (parts by mass) (C1) Ingredients OXBP 25 CEL8010 25 (C2) Ingredients CXC-1821 7 (D) Ingredients P-1 20 (E) Ingredients KBM-403 5 (F) Ingredients R805 10

[步驟(e2):第3接著劑層的積層] 一邊施加50℃的溫度一邊將藉由剝離在步驟(d2)中製作之各向異性導電性接著劑薄膜的第1接著劑層側的PET薄膜而露出之第1接著劑層與在步驟(e1)中製作之第3接著劑層進行了貼合。藉此,獲得了三層結構的各向異性導電性接著劑薄膜(厚度:16μm)。 [Step (e2): Lamination of the 3rd Adhesive Layer] While applying a temperature of 50°C, the first adhesive layer exposed by peeling off the PET film on the first adhesive layer side of the anisotropic conductive adhesive film prepared in step (d2) and the first adhesive layer exposed in step (e1) ) The third adhesive layer produced in ) was bonded. Thereby, an anisotropic conductive adhesive film (thickness: 16 μm) having a three-layer structure was obtained.

<實施例3~實施例10、比較例1> 在步驟(b1)中,如表4所示那樣變更摻合之成分的種類和/或摻合量,除此以外,以與實施例2相同的方式,製作了三層結構的各向異性導電性接著劑薄膜。 <Example 3 to Example 10, Comparative Example 1> In the step (b1), except that the types and/or the blending amounts of the components to be blended were changed as shown in Table 4, in the same manner as in Example 2, an anisotropic conductive three-layer structure was produced Adhesive film.

【表4】    種類 摻合量 (質量份) 實施例 3 實施例 4 實施例 5 實施例 6 實施例 7 實施例 8 實施例 9 實施例 10 比較例 1 (B1)成分 A-BPEF 10 7 5 2.5 7 7 7 10 - VR-90 10 7 5 2.5 7 7 7 10 - CYM M100 - - - - 6 - - - - A-1000 - - - - - 6 - - - A9300-1CL - - - - - - 6 -- - (B2)成分 OXE-02 0.5 0.5 0.2 0.2 0.5 0.5 0.5 0.2 - (C1)成分 OXBP 25 20 25 25 20 25 25 25 25 CEL8010 25 20 25 25 20 25 25 25 25 (C2)成分 CXC-1821 7 7 7 7 7 7 7 7 7 (D)成分 P-1 20 20 20 20 20 20 20 20 25 YP-70 20 20 20 20 20 20 20 20 25 (E)成分 KBM-403 5 5 5 5 5 5 5 5 5 (F)成分 R805 10 10 10 10 10 10 10 10 10 【Table 4】 type Blending amount (parts by mass) Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Example 10 Comparative Example 1 (B1) Ingredients A-BPEF 10 7 5 2.5 7 7 7 10 - VR-90 10 7 5 2.5 7 7 7 10 - CYM M100 - - - - 6 - - - - A-1000 - - - - - 6 - - - A9300-1CL - - - - - - 6 -- - (B2) Ingredients OXE-02 0.5 0.5 0.2 0.2 0.5 0.5 0.5 0.2 - (C1) Ingredients OXBP 25 20 25 25 20 25 25 25 25 CEL8010 25 20 25 25 20 25 25 25 25 (C2) Ingredients CXC-1821 7 7 7 7 7 7 7 7 7 (D) Ingredients P-1 20 20 20 20 20 20 20 20 25 YP-70 20 20 20 20 20 20 20 20 25 (E) Ingredients KBM-403 5 5 5 5 5 5 5 5 5 (F) Ingredients R805 10 10 10 10 10 10 10 10 10

<實施例11> 在步驟(c)中,將照射之光的累計光量變更為2000mJ/cm 2,除此以外,以與實施例10相同的方式,製作了三層結構的各向異性導電性接著劑薄膜。 <Example 11> The anisotropic conductivity of the three-layer structure was produced in the same manner as in Example 10, except that the cumulative light intensity of the irradiated light was changed to 2000 mJ/cm 2 in step (c). Adhesive film.

<實施例12> 在步驟(c)中,將照射之光的累計光量變更為2300mJ/cm 2,除此以外,以與實施例10相同的方式,製作了三層結構的各向異性導電性接著劑薄膜。 <Example 12> In the same manner as in Example 10, except that the cumulative light intensity of the irradiated light was changed to 2300 mJ/cm 2 in the step (c), anisotropic conductivity of a three-layer structure was produced in the same manner as in Example 10. Adhesive film.

<實施例13> 在步驟(b1)中,作為(B2)成分,使用了1.0質量份的Omnirad907來代替Irgacure OXE-02;及將光的累計光量變更為2000mJ/cm 2,除此以外,以與實施例2相同的方式,製作了三層結構的各向異性導電性接著劑薄膜。 <Example 13> In step (b1), as the component (B2), 1.0 parts by mass of Omnirad907 was used instead of Irgacure OXE-02, and the cumulative light amount of light was changed to 2000 mJ/cm 2 , except that In the same manner as in Example 2, an anisotropic conductive adhesive film having a three-layer structure was produced.

<實施例14> 在步驟(b1)及步驟(d1)中,作為(C1)成分,使用了40質量份的YL983U來代替ETERNACOLL OXBP及CELLOXIDE8010;及作為(C2)成分,使用了7質量份的SI-60L來代替CXC-1821,除此以外,以與實施例1相同的方式,製作了雙層結構的各向異性導電性接著劑薄膜。 <Example 14> In step (b1) and step (d1), as the component (C1), 40 parts by mass of YL983U was used instead of ETERNACOLL OXBP and CELLOXIDE8010; and as the component (C2), 7 parts by mass of SI-60L was used instead of Except for CXC-1821, in the same manner as in Example 1, an anisotropic conductive adhesive film having a double-layer structure was produced.

<實施例15> 在步驟(b1)及步驟(d1)中,代替(C1)成分使用了10質量份的作為(C3)成分之HP-4032D;及代替(C2)成分使用了40質量份的作為(C4)成分之HX-3941HP,除此以外,以與實施例1相同的方式,製作了雙層結構的各向異性導電性接著劑薄膜。 <Example 15> In step (b1) and step (d1), 10 parts by mass of HP-4032D as the (C3) component was used instead of the (C1) component; and 40 mass parts of the (C4) component was used instead of the (C2) component Except for HX-3941HP, in the same manner as in Example 1, an anisotropic conductive adhesive film having a double-layer structure was produced.

<實施例16> 進行以下步驟(a2’)來代替步驟(a2),作為在步驟(b2)中使用之在凹部配置有導電粒子之基體,使用了在以下步驟(a2’)中獲得之基體,除此以外,以與實施例1相同的方式,製作了雙層結構的各向異性導電性接著劑薄膜。 <Example 16> The following step (a2') was performed in place of the step (a2), and the substrate obtained in the following step (a2') was used as the substrate in which the conductive particles were arranged in the concave portion used in the step (b2), and In the same manner as in Example 1, an anisotropic conductive adhesive film of a double-layer structure was produced.

[步驟(a2’):焊料粒子的製作及配置] 將Sn-Bi焊料微粒(5N Plus Inc.製造,熔點為138℃,類型8)100g浸漬於蒸餾水中,進行超音波分散之後,進行整平,從而回收了漂浮在上清液中之焊料微粒。重複進行該操作,回收了10g焊料微粒。所獲得之焊料微粒的平均粒徑為1.0μm,粒徑的C.V.值為42%。接著,將所獲得之焊料微粒(平均粒徑:1.0μm,粒徑的C.V.值:42%)配置於在步驟(a1)中準備之基體的形成有凹部之面上。接著,藉由使用微黏結輥刮擦基體的形成有凹部之面來去除多餘的焊料微粒,僅在凹部內配置了焊料微粒。接著,將在凹部配置有焊料微粒之基體投入到氫自由基還原爐(SHINKO SEIKI CO., LTD.製造,氫電漿回焊裝置)中,抽真空之後,將氫氣導入到爐內,使爐內充滿了氫氣。其後,將爐內調整為120℃,照射了氫自由基5分鐘。其後,藉由抽真空去除爐內的氫氣,加熱至145℃之後,將氮氣導入到爐內而恢復到大氣壓之後將爐內的溫度降低至室溫,藉此形成了焊料粒子。藉此,準備了在步驟(b2)中使用之在凹部配置有導電粒子(焊料粒子)之基體。 [Step (a2'): Preparation and Arrangement of Solder Particles] 100 g of Sn-Bi solder particles (manufactured by 5N Plus Inc., melting point 138°C, type 8) were immersed in distilled water, ultrasonically dispersed, and then flattened, thereby recovering the solder particles floating in the supernatant. This operation was repeated, and 10 g of solder particles were recovered. The average particle diameter of the obtained solder fine particles was 1.0 μm, and the C.V. value of the particle diameter was 42%. Next, the obtained solder fine particles (average particle diameter: 1.0 μm, C.V. value of particle diameter: 42%) were placed on the surface of the base body prepared in the step (a1) on which the recesses were formed. Next, the excess solder particles were removed by scraping the surface of the substrate in which the recesses were formed with a micro-bonding roller, and the solder particles were arranged only in the recesses. Next, the substrate with the solder particles arranged in the concave portion was put into a hydrogen radical reduction furnace (manufactured by SHINKO SEIKI CO., LTD., hydrogen plasma reflow apparatus), and after vacuuming, hydrogen gas was introduced into the furnace, and the furnace was Filled with hydrogen. Then, the inside of the furnace was adjusted to 120° C., and hydrogen radicals were irradiated for 5 minutes. Then, the hydrogen in the furnace was removed by vacuuming, and after heating to 145° C., nitrogen gas was introduced into the furnace to return to atmospheric pressure, and then the temperature in the furnace was lowered to room temperature, thereby forming solder particles. Thereby, the base|substrate which arrange|positioned the electroconductive particle (solder particle) in the recessed part used in step (b2) is prepared.

另外,藉由相同的操作製造焊料粒子,藉由敲擊基體的凹部的背側而從凹部回收了所獲得之焊料粒子。確認到,在焊料粒子的表面的一部分具有平面部,平面部的直徑B與焊料粒子的直徑A之比(B/A)為0.15。又,確認到,在由兩對平行線製作與焊料粒子的投影像外接之四邊形時,將對置之邊之間的距離作為X及Y(其中,Y<X)時,Y/X為0.93。又,測量焊料粒子的平均粒徑及粒徑的C.V.值時,平均粒徑為3.8μm,粒徑的C.V.值為7.9%。另外,焊料粒子的平均粒徑、B/A、Y/X為如下值,亦即,將經由步驟(b)及(c)製作之第1接著劑層切成10cm×10cm,對配置有焊料粒子之面實施Pt濺射之後,對300個焊料粒子進行SEM觀察而測量出之值。In addition, solder particles were produced by the same operation, and the obtained solder particles were recovered from the concave portion by hitting the back side of the concave portion of the base. It was confirmed that a part of the surface of the solder particle had a flat portion, and the ratio (B/A) of the diameter B of the flat portion to the diameter A of the solder particle was 0.15. In addition, it was confirmed that when a quadrilateral circumscribing the projected image of the solder particle is formed from two pairs of parallel lines, and the distance between the opposing sides is taken as X and Y (wherein, Y<X), Y/X is 0.93. . In addition, when the average particle diameter and the C.V. value of the particle diameter of the solder particles were measured, the average particle diameter was 3.8 μm, and the C.V. value of the particle diameter was 7.9%. In addition, the average particle size, B/A, and Y/X of the solder particles are values such that the first adhesive layer produced in the steps (b) and (c) is cut into 10 cm×10 cm, and the After the surface of the particles was subjected to Pt sputtering, 300 solder particles were observed and measured by SEM.

<實施例17> 進行了上述步驟(a2’)來代替步驟(a2),除此以外,以與實施例2相同的方式,製作了三層結構的各向異性導電性接著劑薄膜。 <Example 17> In the same manner as in Example 2, except that the above-mentioned step (a2') was carried out in place of the step (a2), an anisotropic conductive adhesive film having a three-layer structure was produced.

<比較例2> 未實施步驟(c),除此以外,以與實施例2相同的方式,製作了三層結構的各向異性導電性接著劑薄膜。 <Comparative Example 2> Except that step (c) was not carried out, in the same manner as in Example 2, an anisotropic conductive adhesive film having a three-layer structure was produced.

<評價> (導電粒子的轉印率的評價) 關於實施例1~實施例17及比較例1~比較例2的各向異性導電性接著劑薄膜,使用顯微鏡及圖像解析軟體(ImagePro,Hakuto Co., Ltd.製造),在20個部位實測每25,000μm 2的導電粒子數,將其平均值換算為每1mm 2的導電粒子數,將該數除以在基體上形成之凹部數,測量了導電粒子的轉印率(參閱下述式)。將導電粒子的轉印率為95%以上的情形評價為“S”判定,將導電粒子的轉印率為90%以上且小於95%的情形評價為“A”判定,將導電粒子的轉印率為80%以上且小於90%的情形評價為“B”判定,將導電粒子的轉印率小於80%的情形評價為“C”判定。將結果示於表5~表7中。 導電粒子的轉印率(%)=(各向異性導電性接著劑薄膜中的導電粒子數的平均密度/在基體上形成之凹部的密度)×100 <Evaluation> (Evaluation of Transfer Rate of Conductive Particles) About the anisotropic conductive adhesive films of Examples 1 to 17 and Comparative Examples 1 to 2, a microscope and an image analysis software (ImagePro, Hakuto) were used. Co., Ltd.), measure the number of conductive particles per 25,000 μm 2 at 20 locations, convert the average value to the number of conductive particles per 1 mm 2 , divide this number by the number of recesses formed on the substrate, and measure The transfer rate of conductive particles (see the following formula). The case where the transfer rate of conductive particles was 95% or more was evaluated as "S" judgment, and the case where the transfer rate of conductive particles was 90% or more and less than 95% was evaluated as "A" judgment, and the transfer rate of conductive particles was evaluated as "A" judgment. The case where the ratio was 80% or more and less than 90% was evaluated as "B" judgment, and the case where the transfer rate of conductive particles was less than 80% was evaluated as "C" judgment. The results are shown in Tables 5 to 7. Transfer rate of conductive particles (%) = (average density of the number of conductive particles in the anisotropic conductive adhesive film / density of the recesses formed on the substrate) × 100

(導電粒子的捕獲率的評價及連接電阻的評價) [電路構件的準備] 作為第1電路構件(a),準備了在無鹼玻璃基板(OA-11,Nippon Electric Glass Co.,Ltd.製造,外形:38mm×28mm,厚度:0.3mm)的表面形成有AlNd(100nm)/Mo(50nm)/ITO(100nm)的配線圖案(圖案寬度:19μm,電極間空間:5μm)者。作為第1電路構件(b),準備了在無鹼玻璃基板(OA-11,Nippon Electric Glass Co.,Ltd.製造,外形:38mm×28mm,厚度:0.3mm)的表面形成有Cr(20nm)/Au(200nm)的配線圖案(圖案寬度:19μm,電極間空間:5μm)者。作為第2電路構件,準備了將凸塊電極以2列呈交錯狀排列之IC晶片(外形:0.9mm×20.3mm,厚度:0.3mm,凸塊電極的大小:70μm×12μm,凸塊電極間空間:12μm,凸塊電極厚度:8μm)。 (Evaluation of Capture Rate of Conductive Particles and Evaluation of Connection Resistance) [Preparation of circuit components] As the first circuit member (a), AlNd (100 nm) was prepared on the surface of an alkali-free glass substrate (OA-11, manufactured by Nippon Electric Glass Co., Ltd., external shape: 38 mm×28 mm, thickness: 0.3 mm). /Mo (50 nm)/ITO (100 nm) wiring pattern (pattern width: 19 μm, space between electrodes: 5 μm). As the first circuit member (b), an alkali-free glass substrate (OA-11, manufactured by Nippon Electric Glass Co., Ltd., outer shape: 38 mm×28 mm, thickness: 0.3 mm) was prepared in which Cr (20 nm) was formed on the surface /Au (200 nm) wiring pattern (pattern width: 19 μm, space between electrodes: 5 μm). As the second circuit member, an IC chip in which bump electrodes were arranged in two rows in a staggered pattern was prepared (outline: 0.9 mm × 20.3 mm, thickness: 0.3 mm, size of bump electrodes: 70 μm × 12 μm, between bump electrodes space: 12 μm, bump electrode thickness: 8 μm).

[連接結構體(a)的製作] 分別使用實施例1~實施例13及比較例1~比較例2的各向異性導電性接著劑薄膜來製作了連接結構體(a)。將各向異性導電性接著劑薄膜配置於第1電路構件(a)上,以使第1接著劑層或第3接著劑層與第1電路構件(a)接觸。使用由包括陶瓷加熱器之載台和工具(8mm×50mm)構成之熱壓接裝置(BS-17U,OHASHI ENGINEERING Co.,Ltd.製造),在70℃、0.98MPa(10kgf/cm 2)的條件下加熱及加壓2秒鐘,將各向異性導電性接著劑薄膜貼合於第1電路構件(a),剝離了各向異性導電性接著劑薄膜的與第1電路構件(a)相反的一側的脫模薄膜。接著,進行了第1電路構件(a)的凸塊電極與第2電路構件的電路電極的位置對準之後,在130℃下以40MPa加熱/加壓5秒鐘,將各向異性導電性接著劑薄膜的第2接著劑層貼合於第2電路構件而製作了連接結構體(a)。另外,溫度表示各向異性導電性接著劑薄膜的實測最高達到溫度,壓力表示對第2電路構件的凸塊電極與第1電路構件(a)對置之面的總面積計算出之值。 [Preparation of Connected Structure (a)] Using the anisotropic conductive adhesive films of Examples 1 to 13 and Comparative Examples 1 to 2, respectively, a connected structure (a) was prepared. An anisotropic conductive adhesive film is arrange|positioned on the 1st circuit member (a) so that a 1st adhesive layer or a 3rd adhesive layer may contact a 1st circuit member (a). Using a thermocompression bonding apparatus (BS-17U, manufactured by OHASHI ENGINEERING Co., Ltd.) consisting of a stage including a ceramic heater and a tool (8mm x 50mm), at 70°C, 0.98MPa (10kgf/cm 2 ) The anisotropic conductive adhesive film was adhered to the first circuit member (a) by heating and pressurizing under the conditions for 2 seconds, and the anisotropic conductive adhesive film was peeled off the opposite to the first circuit member (a). release film on one side. Next, after aligning the bump electrodes of the first circuit member (a) and the circuit electrodes of the second circuit member, heating/pressurizing at 130° C. at 40 MPa for 5 seconds was performed to bond the anisotropic conductivity. The second adhesive layer of the agent film was bonded to the second circuit member to produce a connected structure (a). In addition, the temperature represents the actual measured maximum temperature of the anisotropic conductive adhesive thin film, and the pressure represents the value calculated for the total area of the surfaces of the second circuit member facing the bump electrodes and the first circuit member (a).

[連接結構體(b)的製作] 作為各向異性導電性接著劑薄膜使用了實施例14的各向異性導電性接著劑薄膜;及在140℃下以60MPa加熱/加壓了5秒鐘,除此以外,以與連接結構體(a)的製作相同的方式,製作了連接結構體(b)。 [Preparation of Linked Structure (b)] As the anisotropic conductive adhesive film, the anisotropic conductive adhesive film of Example 14 was used; and the bonding structure ( In the same manner as the production of a), the connecting structure (b) was produced.

[連接結構體(c)的製作] 作為各向異性導電性接著劑薄膜使用了實施例15的各向異性導電性接著劑薄膜;及在230℃下以60MPa加熱/加壓了5秒鐘,除此以外,以與連接結構體(a)的製作相同的方式,製作了連接結構體(c)。 [Preparation of Linked Structure (c)] As the anisotropic conductive adhesive film, the anisotropic conductive adhesive film of Example 15 was used; and the bonding structure ( In the same manner as the production of a), the connecting structure (c) was produced.

[連接結構體(d)的製作] 作為各向異性導電性接著劑薄膜分別使用了實施例16~實施例17的各向異性導電性接著劑薄膜;使用了第1電路構件(b)來代替第1電路構件(a);及在160℃下以30MPa加熱/加壓了5秒鐘,除此以外,以與連接結構體(a)的製作相同的方式,製作了連接結構體(d)。 [Preparation of Linked Structure (d)] The anisotropic conductive adhesive films of Examples 16 to 17 were used as the anisotropic conductive adhesive films; the first circuit member (b) was used instead of the first circuit member (a); and A connected structure (d) was produced in the same manner as in the production of the connected structure (a), except that it was heated and pressurized at 30 MPa for 5 seconds at 160°C.

[導電粒子的捕獲率的評價] 在使用了實施例1~實施例17及比較例1~比較例2的各向異性導電性接著劑薄膜之上述連接結構體(連接結構體(a)~(d))的製作中,對凸塊電極與電路電極之間的導電粒子的捕獲率進行了評價。在此,導電粒子的捕獲率係指凸塊電極上的導電粒子密度與各向異性導電性接著劑薄膜中的導電粒子密度之比,依據以下公式進行了計算。又,關於凸塊電極上的導電粒子數的平均,藉由使用微分干涉顯微鏡從玻璃基板側觀察所安裝之電路構件來測量每1個凸塊的導電粒子的捕獲數而求出。將導電粒子的捕獲率為90%以上的情形評價為“S”判定,將導電粒子的捕獲率為80%以上且小於90%的情形評價為“A”判定,將導電粒子的捕獲率為70%以上且小於80%的情形評價為“B”判定,將導電粒子的捕獲率小於70%的情形評價為“C”判定。將結果示於表5~表7中。 導電粒子的捕獲率(%)=(凸塊電極上的導電粒子數的平均/(凸塊電極面積×各向異性導電性接著劑薄膜中的導電粒子密度))×100 [Evaluation of Capture Rate of Conductive Particles] In the production of the above-mentioned connected structures (connected structures (a) to (d)) using the anisotropic conductive adhesive films of Examples 1 to 17 and Comparative Examples 1 to 2, the convex The capture rate of conductive particles between the bulk electrode and the circuit electrode was evaluated. Here, the capture rate of conductive particles refers to the ratio of the density of conductive particles on the bump electrode to the density of conductive particles in the anisotropic conductive adhesive film, and was calculated according to the following formula. In addition, the average of the number of conductive particles on the bump electrodes was obtained by observing the mounted circuit member from the glass substrate side using a differential interference microscope, and measuring the number of trapped conductive particles per bump. The case where the capture rate of conductive particles was 90% or more was evaluated as "S" judgment, the case where the capture rate of conductive particles was 80% or more and less than 90% was evaluated as "A" judgment, and the capture rate of conductive particles was 70%. % or more and less than 80% were evaluated as "B" judgment, and the case where the capture rate of conductive particles was less than 70% was evaluated as "C" judgment. The results are shown in Tables 5 to 7. Capture rate of conductive particles (%) = (average of the number of conductive particles on the bump electrode / (bump electrode area × conductive particle density in the anisotropic conductive adhesive film)) × 100

[連接電阻的評價] 在剛製作連接結構體之後及高溫高濕試驗之後,藉由四端測量法測量14處的連接電阻,使用測量出之連接電阻值的最大值,對實施例1~實施例17及比較例1~比較例2的連接電阻進行了評價。關於高溫高濕試驗,在溫度85℃濕度85%RH的高溫高濕槽中對連接結構體處理500小時來進行。又,在連接電阻的測量中使用了數位萬用表(MLR21,Kusumoto Chemicals, Ltd製造)。將連接電阻值小於1.0Ω的情形評價為“S”判定,將連接電阻值為1.0Ω以上且小於2.5Ω的情形評價為“A”判定,將連接電阻值為2.5Ω以上且小於5.0Ω的情形評價為“B”判定,將連接電阻值為5.0Ω以上且小於10.0Ω的情形評價為“C”判定,將連接電阻值為10.0Ω以上的情形評價為“D”判定。將結果示於表5~表7中。 [Evaluation of connection resistance] Immediately after the connection structure was fabricated and after the high-temperature and high-humidity test, the connection resistance at 14 points was measured by the four-terminal measurement method, and the maximum value of the measured connection resistance value was used. - The connection resistance of the comparative example 2 was evaluated. The high-temperature and high-humidity test was performed by treating the connected structure in a high-temperature and high-humidity tank with a temperature of 85°C and a humidity of 85% RH for 500 hours. In addition, a digital multimeter (MLR21, manufactured by Kusumoto Chemicals, Ltd.) was used for the measurement of the connection resistance. The case where the connection resistance value was less than 1.0Ω was evaluated as "S" judgment, the case where the connection resistance value was 1.0Ω or more and less than 2.5Ω was evaluated as "A" judgment, and the connection resistance value was 2.5Ω or more and less than 5.0Ω. The case was evaluated as "B" judgment, the case where the connection resistance value was 5.0Ω or more and less than 10.0Ω was evaluated as "C" judgment, and the case where the connection resistance value was 10.0Ω or more was evaluated as "D" judgment. The results are shown in Tables 5 to 7.

【表5】 實施例 1 2 3 4 5 6 7 8 9 轉印性 A A A A B B S S S 捕獲率 S A A A B B B B B 連接電阻 (剛安裝之後) 測量值 (Ω) 1.9 2.1 2.1 2.2 3.2 2.3 2.1 2.6 2.6 判定 A A A A B A A B B 連接電阻 (高溫高濕試驗之後) 測量值 (Ω) 5.0 5.5 5.5 5.9 6.6 5.6 5.9 8.0 6.6 判定 C C C C C C C C C 【table 5】 Example 1 2 3 4 5 6 7 8 9 transferability A A A A B B S S S Capture rate S A A A B B B B B Connect the resistor (just after installation) Measured value (Ω) 1.9 2.1 2.1 2.2 3.2 2.3 2.1 2.6 2.6 determination A A A A B A A B B Connection resistance (after high temperature and high humidity test) Measured value (Ω) 5.0 5.5 5.5 5.9 6.6 5.6 5.9 8.0 6.6 determination C C C C C C C C C

【表6】 實施例 10 11 12 13 14 15 16 17 轉印性 A A A A A S A A 捕獲率 A S S B A B S A 連接電阻 (剛安裝之後) 測量值 (Ω) 2.0 3.0 3.5 2.3 2.0 2.3 0.2 0.2 判定 A B B A A A S S 連接電阻 (高溫高濕試驗之後) 測量值 (Ω) 5.4 6.8 6.3 5.6 6.0 7.5 0.5 0.5 判定 C C C C C C S S 【Table 6】 Example 10 11 12 13 14 15 16 17 transferability A A A A A S A A Capture rate A S S B A B S A Connect the resistor (just after installation) Measured value (Ω) 2.0 3.0 3.5 2.3 2.0 2.3 0.2 0.2 determination A B B A A A S S Connection resistance (after high temperature and high humidity test) Measured value (Ω) 5.4 6.8 6.3 5.6 6.0 7.5 0.5 0.5 determination C C C C C C S S

【表7】 比較例 1 2 轉印性 C A 捕獲率 D D 連接電阻 (剛安裝之後) 測量值 (Ω) 3.0 2.5 判定 B B 連接電阻 (高溫高濕試驗之後) 測量值 (Ω) 10.3 11.5 判定 D D 【Table 7】 Comparative example 1 2 transferability C A Capture rate D D Connect the resistor (just after installation) Measured value (Ω) 3.0 2.5 determination B B Connection resistance (after high temperature and high humidity test) Measured value (Ω) 10.3 11.5 determination D D

1:第1接著劑層 2:第2接著劑層 3:接著劑成分 4:導電粒子 5:第3接著劑層 6:基體 7:凹部 9:組成物層 10A,10B:電路連接用接著劑薄膜 21:第1電路基板 22:第1電極(電路電極) 23:第1電路構件 24:第2電路基板 25:第2電極(凸塊電極) 26:第2電路構件 27:連接部 100:連接結構體 1: The first adhesive layer 2: The second adhesive layer 3: Adhesive ingredients 4: Conductive particles 5: The third adhesive layer 6: Matrix 7: Recess 9: Composition layer 10A, 10B: Adhesive film for circuit connection 21: The first circuit board 22: 1st electrode (circuit electrode) 23: 1st circuit component 24: Second circuit board 25: 2nd electrode (bump electrode) 26: Second circuit member 27: Connection part 100: Connection structure

圖1係表示電路連接用接著劑薄膜的一實施形態之示意剖面圖。 圖2係表示圖1的電路連接用接著劑薄膜中的導電粒子的配置例之示意俯視圖。 圖3係表示圖1的電路連接用接著劑薄膜中的導電粒子的配置例之示意俯視圖。 圖4係表示電路連接用接著劑薄膜的另一實施形態之示意剖面圖。 圖5係用於製造圖1的電路連接用接著劑薄膜之基體的示意剖面圖。 圖6係表示圖5的基體的凹部的截面形狀的變形例之圖。 圖7係表示在圖5的基體的凹部配置有導電粒子之狀態之圖。 圖8係表示一實施形態的電路連接用接著劑薄膜之製造方法的一個步驟之示意剖面圖。 圖9係表示圖1的電路連接用接著劑薄膜之製造方法的一個步驟之示意剖面圖。 圖10係表示圖1的電路連接用接著劑薄膜之製造方法的一個步驟之示意剖面圖。 圖11係表示連接結構體的一實施形態之示意剖面圖。 圖12係表示連接結構體之製造方法的一實施形態之示意剖面圖。 FIG. 1 is a schematic cross-sectional view showing an embodiment of an adhesive film for circuit connection. FIG. 2 is a schematic plan view showing an arrangement example of conductive particles in the adhesive film for circuit connection of FIG. 1 . FIG. 3 is a schematic plan view showing an example of arrangement of conductive particles in the adhesive film for circuit connection of FIG. 1 . FIG. 4 is a schematic cross-sectional view showing another embodiment of the adhesive film for circuit connection. FIG. 5 is a schematic cross-sectional view of a substrate for producing the adhesive film for circuit connection of FIG. 1 . FIG. 6 is a view showing a modification of the cross-sectional shape of the recessed portion of the base body of FIG. 5 . FIG. 7 is a view showing a state in which conductive particles are arranged in the concave portion of the base of FIG. 5 . FIG. 8 is a schematic cross-sectional view showing one step of a method for producing an adhesive film for circuit connection according to an embodiment. FIG. 9 is a schematic cross-sectional view showing one step of the method for producing the adhesive film for circuit connection of FIG. 1 . FIG. 10 is a schematic cross-sectional view showing one step of the method of manufacturing the adhesive film for circuit connection of FIG. 1 . FIG. 11 is a schematic cross-sectional view showing an embodiment of the connection structure. FIG. 12 is a schematic cross-sectional view showing an embodiment of a method for manufacturing a connection structure.

Claims (18)

一種電路連接用接著劑薄膜之製造方法,其包括如下步驟: 準備在表面具有複數個凹部並且在該複數個凹部的至少一部分配置有導電粒子之基體; 藉由在前述基體的前述表面上設置含有光固化性成分及第1熱固化性成分之組成物層,將前述導電粒子轉印到前述組成物層; 藉由對前述組成物層照射光而形成含有複數個前述導電粒子、前述光固化性成分的固化物及前述第1熱固化性成分之第1接著劑層;及 在前述第1接著劑層的一個面上設置含有第2熱固化性成分之第2接著劑層。 A manufacturing method of an adhesive film for circuit connection, comprising the steps of: Prepare a matrix having a plurality of concave portions on the surface and at least a part of the plurality of concave portions arranged with conductive particles; Transferring the conductive particles to the composition layer by providing a composition layer containing a photocurable component and a first thermosetting component on the surface of the substrate; forming a first adhesive layer containing a plurality of the conductive particles, a cured product of the photocurable component, and the first thermosetting component by irradiating the composition layer with light; and A second adhesive layer containing a second thermosetting component is provided on one surface of the first adhesive layer. 如請求項1所述之電路連接用接著劑薄膜之製造方法,其中 前述光固化性成分包含自由基聚合性化合物及光自由基聚合起始劑, 前述第1熱固化性成分包含陽離子聚合性化合物及熱陽離子聚合起始劑。 The method for producing an adhesive film for circuit connection according to claim 1, wherein The photocurable component includes a radically polymerizable compound and a photoradical polymerization initiator, The said 1st thermosetting component contains a cationically polymerizable compound and a thermal cationic polymerization initiator. 如請求項2所述之電路連接用接著劑薄膜之製造方法,其中 前述第1熱固化性成分包含具有環狀醚基之化合物作為前述陽離子聚合性化合物。 The method for producing an adhesive film for circuit connection according to claim 2, wherein The said 1st thermosetting component contains the compound which has a cyclic ether group as the said cationically polymerizable compound. 如請求項3所述之電路連接用接著劑薄膜之製造方法,其中 前述第1熱固化性成分包含選自由氧雜環丁烷化合物及脂環式環氧化合物組成的組中之至少1種作為前述陽離子聚合性化合物。 The method for producing an adhesive film for circuit connection according to claim 3, wherein The said 1st thermosetting component contains at least 1 sort(s) chosen from the group which consists of an oxetane compound and an alicyclic epoxy compound as the said cationically polymerizable compound. 如請求項2至請求項4之任一項所述之電路連接用接著劑薄膜之製造方法,其中 前述光固化性成分包含由下述式(1)表示之化合物作為前述自由基聚合性化合物, [化學式1]
Figure 03_image016
式(1)中,R 1表示氫原子或甲基,X表示碳數1~3的烷二基。
The method for producing an adhesive film for circuit connection according to any one of claim 2 to claim 4, wherein the photocurable component contains a compound represented by the following formula (1) as the radical polymerizable compound, [Chemical formula 1]
Figure 03_image016
In formula (1), R 1 represents a hydrogen atom or a methyl group, and X represents an alkanediyl group having 1 to 3 carbon atoms.
如請求項2至請求項5之任一項所述之電路連接用接著劑薄膜之製造方法,其中 前述光固化性成分包含由下述式(I)表示之化合物作為前述光自由基聚合起始劑, [化學式2]
Figure 03_image018
式(I)中,R 2、R 3及R 4分別獨立地表示氫原子、碳數1~20的烷基或包含芳香族系烴基之有機基團。
The method for producing an adhesive film for circuit connection according to any one of claim 2 to claim 5, wherein the photocurable component contains a compound represented by the following formula (I) as the initiation of the photoradical polymerization agent, [chemical formula 2]
Figure 03_image018
In formula (I), R 2 , R 3 and R 4 each independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, or an organic group including an aromatic hydrocarbon group.
如請求項2至請求項6之任一項所述之電路連接用接著劑薄膜之製造方法,其中 前述第1熱固化性成分包含由下述式(II)或下述式(III)表示之具有陽離子之鹽化合物作為前述熱陽離子聚合起始劑, [化學式3]
Figure 03_image020
式(II)中,R 5及R 6分別獨立地表示氫原子、碳數1~20的烷基或者包含具有取代基或未經取代的芳香族系烴基之有機基團,R 7表示碳數1~6的烷基, [化學式4]
Figure 03_image022
式(III)中,R 8及R 9分別獨立地表示氫原子、碳數1~20的烷基或者包含具有取代基或未經取代的芳香族系烴基之有機基團,R 10及R 11分別獨立地表示碳數1~6的烷基。
The method for producing an adhesive film for circuit connection according to any one of claim 2 to claim 6, wherein the first thermosetting component contains a compound represented by the following formula (II) or the following formula (III). A salt compound having a cation as the aforementioned thermal cationic polymerization initiator, [Chemical formula 3]
Figure 03_image020
In formula (II), R 5 and R 6 each independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, or an organic group containing a substituted or unsubstituted aromatic hydrocarbon group, and R 7 represents a carbon number Alkyl of 1 to 6, [Chemical formula 4]
Figure 03_image022
In formula (III), R 8 and R 9 each independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, or an organic group containing a substituted or unsubstituted aromatic hydrocarbon group, R 10 and R 11 Each independently represents an alkyl group having 1 to 6 carbon atoms.
如請求項1至請求項7之任一項所述之電路連接用接著劑薄膜之製造方法,其中 前述導電粒子的平均粒徑為1~30μm, 前述導電粒子的粒徑的C.V.值為20%以下。 The method for producing an adhesive film for circuit connection according to any one of claim 1 to claim 7, wherein The average particle size of the conductive particles is 1-30 μm, The C.V. value of the particle diameter of the conductive particles is 20% or less. 如請求項1至請求項8之任一項所述之電路連接用接著劑薄膜之製造方法,其中 前述導電粒子為焊料粒子。 The method for producing an adhesive film for circuit connection according to any one of claim 1 to claim 8, wherein The aforementioned conductive particles are solder particles. 如請求項9所述之電路連接用接著劑薄膜之製造方法,其中 前述焊料粒子包含選自由錫、錫合金、銦及銦合金組成的組中之至少一種。 The method for producing an adhesive film for circuit connection according to claim 9, wherein The aforementioned solder particles include at least one selected from the group consisting of tin, tin alloys, indium, and indium alloys. 如請求項10所述之電路連接用接著劑薄膜之製造方法,其中 前述焊料粒子包含選自由In-Bi合金、In-Sn合金、In-Sn-Ag合金、Sn-Au合金、Sn-Bi合金、Sn-Bi-Ag合金、Sn-Ag-Cu合金及Sn-Cu合金組成的組中之至少一種。 The method for producing an adhesive film for circuit connection according to claim 10, wherein The aforementioned solder particles are selected from the group consisting of In-Bi alloy, In-Sn alloy, In-Sn-Ag alloy, Sn-Au alloy, Sn-Bi alloy, Sn-Bi-Ag alloy, Sn-Ag-Cu alloy and Sn-Cu At least one of the group consisting of alloys. 如請求項9至請求項11之任一項所述之電路連接用接著劑薄膜之製造方法,其中 在前述焊料粒子的表面的一部分具有平面部。 The method for producing an adhesive film for circuit connection according to any one of claim 9 to claim 11, wherein A part of the surface of the said solder particle has a flat part. 如請求項12所述之電路連接用接著劑薄膜之製造方法,其中 前述平面部的直徑B與前述焊料粒子的直徑A之比亦即B/A滿足下述式, 0.01<B/A<1.0。 The method for producing an adhesive film for circuit connection according to claim 12, wherein The ratio of the diameter B of the flat portion to the diameter A of the solder particles, that is, B/A, satisfies the following formula: 0.01<B/A<1.0. 如請求項1至請求項13之任一項所述之電路連接用接著劑薄膜之製造方法,其中 在由兩對平行線製作與前述導電粒子的投影像外接之四邊形之情形下,將對置之邊之間的距離作為X及Y,並且Y<X時,X及Y滿足下述式, 0.8<Y/X≤1.0。 The method for producing an adhesive film for circuit connection according to any one of claim 1 to claim 13, wherein In the case where a quadrilateral circumscribing the projected image of the conductive particle is made from two pairs of parallel lines, the distance between the opposing sides is taken as X and Y, and when Y<X, X and Y satisfy the following formula: 0.8<Y/X≤1.0. 如請求項1至請求項14之任一項所述之電路連接用接著劑薄膜之製造方法,其中 前述複數個凹部以規定的圖案形成。 The method for producing an adhesive film for circuit connection according to any one of claim 1 to claim 14, wherein The plurality of recesses are formed in a predetermined pattern. 一種電路連接用接著劑薄膜,其含有導電粒子,前述電路連接用接著劑薄膜具備: 第1接著劑層,含有複數個前述導電粒子、光固化性成分的固化物及第1熱固化性成分;及第2接著劑層,設置於第1接著劑層上且含有第2熱固化性成分, 前述複數個導電粒子的至少一部分,在俯視前述電路連接用接著劑薄膜時以規定的圖案排列,並且在前述電路連接用接著劑薄膜的縱截面中以相鄰之導電粒子彼此相互分離之狀態橫向排列。 An adhesive film for circuit connection, which contains conductive particles, and the adhesive film for circuit connection includes: a first adhesive layer containing a plurality of the conductive particles, a cured product of a photocurable component, and a first thermosetting component; and a second adhesive layer provided on the first adhesive layer and containing a second thermosetting component Element, At least a part of the plurality of conductive particles are arranged in a predetermined pattern when viewed from above the adhesive film for circuit connection, and in the longitudinal cross-section of the adhesive film for circuit connection, the adjacent conductive particles are separated from each other laterally. arrangement. 一種連接結構體,其具備: 第1電路構件,具有第1電極; 第2電路構件,具有第2電極;及 連接部,包含請求項16所述之電路連接用接著劑薄膜的固化體,將前述第1電極與前述第2電極經由前述導電粒子相互電連接並且將前述第1電路構件與前述第2電路構件接著。 A connection structure, which has: a first circuit member having a first electrode; a second circuit member having a second electrode; and A connecting portion comprising a cured body of the adhesive film for circuit connection according to claim 16, wherein the first electrode and the second electrode are electrically connected to each other via the conductive particles, and the first circuit member and the second circuit member are connected then. 一種連接結構體之製造方法,其包括如下步驟: 在具有第1電極之第1電路構件的設置有前述第1電極之面與具有第2電極之第2電路構件的設置有前述第2電極之面之間配置請求項16所述之電路連接用接著劑薄膜;及 將包含前述第1電路構件、前述電路連接用接著劑薄膜及前述第2電路構件之積層體在前述積層體的厚度方向上按壓之狀態下進行加熱,藉此將前述第1電極與前述第2電極經由前述導電粒子相互電連接並且將前述第1電路構件與前述第2電路構件接著。 A method of manufacturing a connecting structure, comprising the steps of: The circuit connection according to claim 16 is arranged between the surface of the first circuit member having the first electrode, on which the first electrode is provided, and the surface of the second circuit member having the second electrode, on which the second electrode is provided. Adhesive film; and By heating the laminate including the first circuit member, the adhesive film for circuit connection, and the second circuit member in a state of being pressed in the thickness direction of the laminate, the first electrode and the second The electrodes are electrically connected to each other via the conductive particles, and the first circuit member and the second circuit member are bonded together.
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